Multilayer Patents (Class 428/811.2)
  • Patent number: 10607898
    Abstract: A TMR element includes a magnetic tunnel junction, a side wall portion that covers a side surface of the magnetic tunnel junction, and a minute particle region that is disposed in the side wall portion. The side wall portion includes an insulation material. The minute particle region includes the insulation material and a plurality of minute magnetic metal particles that are dispersed in the insulation material. The minute particle region is electrically connected in parallel with the magnetic tunnel junction.
    Type: Grant
    Filed: November 8, 2017
    Date of Patent: March 31, 2020
    Assignee: TDK CORPORATION
    Inventors: Zhenyao Tang, Tomoyuki Sasaki
  • Patent number: 9618411
    Abstract: A pressure sensor device comprises a support substrate including a thin film area which is bendable by a pressure, a sensor film comprising a first electrode provided on the thin film area, a second electrode provided on the first electrode, a reference layer provided between the first electrode and the second electrode, a free layer provided between the reference layer and the first electrode or between the reference layer and the second electrode, a spacer layer provided between the reference layer and the free layer, a shield provided on a side of the support substrate.
    Type: Grant
    Filed: January 24, 2013
    Date of Patent: April 11, 2017
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hiromi Yuasa, Hideaki Fukuzawa, Yoshihiko Fuji, Michiko Hara, Yoshihiro Higashi, Tomohiko Nagata, Akio Hori
  • Patent number: 9472216
    Abstract: A magnetic read apparatus has an air-bearing surface (ABS) and includes a differential read sensor, side bias structure(s) and rear magnetic bias structure(s). The differential read sensor includes first and second free layers and a nonmagnetic spacer layer between the first and second free layers in a down-track direction. The side bias structure(s) are adjacent to the first and second free layers in a cross-track direction perpendicular to the down-track direction. The side bias structure(s) magnetically bias the first and second free layers in the cross-track direction. The differential read sensor is between the ABS and the rear magnetic bias structure(s). The rear magnetic bias structure(s) provide a first magnetic bias for the first free layer in a first direction along a stripe height direction perpendicular to the ABS and provide a second magnetic bias for the second free layer in a second direction opposite to the first direction.
    Type: Grant
    Filed: September 23, 2015
    Date of Patent: October 18, 2016
    Assignee: Western Digital (Fremont), LLC
    Inventors: Daniele Mauri, Savas Gider, Hui Zhao
  • Patent number: 9435868
    Abstract: According to one embodiment, a magneto-resistive effect device, includes a stacked body stacked on a substrate, a pair of first electrodes that feeds current to the stacked body, a strain introduction member, and a second electrode for applying a voltage to the strain introduction member. The stacked body includes a first magnetic layer that includes one or more metals selected from the group consisting of iron, cobalt, and nickel, a second magnetic layer stacked on the first magnetic layer, having a composition that is different from the first magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer.
    Type: Grant
    Filed: March 17, 2015
    Date of Patent: September 6, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Devin Giddings, Hideaki Fukuzawa, Yoshihiko Fuji, Michiko Hara, Hiromi Yuasa
  • Patent number: 9196336
    Abstract: Provided is a storage cell that makes it possible to enhance magnetic characteristics of magnetization pinned layer, a storage device and a magnetic head that include the storage cell. The storage cell includes a layer structure including a base layer, a storage layer in which a direction of magnetization is varied in correspondence with information, a magnetization pinned layer that is formed above the base layer and has magnetization that is perpendicular to a film surface and serves as a reference of information stored in the storage layer, and an intermediate layer that is provided between the storage layer and the magnetization pinned layer and is made of a nonmagnetic body. The base layer has a laminated structure of ruthenium and a nonmagnetic body having a face-centered cubic lattice, and the ruthenium is formed at a location adjacent to the magnetization pinned layer.
    Type: Grant
    Filed: August 22, 2013
    Date of Patent: November 24, 2015
    Assignee: SONY CORPORATION
    Inventors: Hiroyuki Uchida, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Tetsuya Asayama, Kazutaka Yamane
  • Patent number: 9129622
    Abstract: A magnetoresistive effect element that prevents a recording medium from deteriorating by effectively inhibiting erroneous writing to a medium or the like includes a magnetoresistive effect part, and an upper shield layer and a lower shield layer that are laminated and formed in a manner sandwiching the magnetoresistive effect part from above and below, and is in a current perpendicular to plane (CPP) structure in which a sense current is applied in a lamination direction.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: September 8, 2015
    Assignee: TDK Corporation
    Inventors: Takahiko Machita, Naomichi Degawa, Takekazu Yamane, Takumi Yanagisawa, Satoshi Miura, Kenta Hamamoto, Minoru Ota, Kenzo Makino, Shohei Kawasaki
  • Patent number: 9040178
    Abstract: A TMR sensor that includes a free layer having at least one B-containing (BC) layer made of CoFeB, CoFeBM, CoB, COBM, or CoBLM, and a plurality of non-B containing (NBC) layers made of CoFe, CoFeM, or CoFeLM is disclosed where L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb. One embodiment is represented by (NBC/BC)n where n?2. A second embodiment is represented by (NBC/BC)n/NBC where n?1. In every embodiment, a NBC layer contacts the tunnel barrier and NBC layers each with a thickness from 2 to 8 Angstroms are formed in alternating fashion with one or more BC layers each 10 to 80 Angstroms thick. Total free layer thickness is <100 Angstroms. The free layer configuration described herein enables a significant noise reduction (SNR enhancement) while realizing a high TMR ratio, low magnetostriction, low RA, and low Hc values.
    Type: Grant
    Filed: September 22, 2008
    Date of Patent: May 26, 2015
    Assignee: Headway Technologies, Inc.
    Inventors: Tong Zhao, Hui-Chuan Wang, Yu-Chen Zhou, Min Li, Kunliang Zhang
  • Patent number: 9036308
    Abstract: Various embodiments may be generally directed to a magnetic sensor constructed with a decoupling layer that has a predetermined first morphology. A magnetic free layer can be deposited contactingly adjacent to the decoupling layer with the magnetic free layer configured to have at least a first sub-layer having a predetermined second morphology.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: May 19, 2015
    Assignee: Seagate Technology LLC
    Inventors: Mark William Covington, Mark Thomas Kief, Wonjoon Jung
  • Patent number: 9017831
    Abstract: A thin-film magnetic oscillation element includes a pinned magnetic layer, a free magnetic layer, a nonmagnetic spacer layer provided between the pinned magnetic layer and the free magnetic layer, and a pair of electrodes, in which the easy axis of magnetization of the pinned magnetic layer lies in an in-plane direction of the plane of the pinned magnetic layer, and the easy axis of magnetization of the free magnetic layer lies in a direction normal to the plane of the free magnetic layer. Preferably, the relationship between the saturation magnetization Ms and the magnetic anisotropy field Ha of the free magnetic layer satisfies 1.257 Ms<Ha<12.57 Ms. More preferably, the free magnetic layer is composed of an alloy or a stacked film containing at least one element selected from Co, Ni, Fe, and B.
    Type: Grant
    Filed: February 27, 2013
    Date of Patent: April 28, 2015
    Assignee: TDK Corporation
    Inventors: Katsuyuki Nakada, Takahiro Suwa, Kuniyasu Ito, Yuji Kakinuma, Masato Takahashi
  • Patent number: 9007055
    Abstract: Provided are a self-pinned spin valve magnetoresistance effect film, a magnetic sensor using the same, and a rotation angle detection device. The self-pinned spin valve magnetoresistance effect film has a strong coupling magnetic field in a pinned layer, a small reduction in the change in resistance, and superior resistance to magnetic fields without reducing the coercive force in a first ferromagnetic layer, which is a pinned layer in the film, even when exposed to a strong external magnetic field. By inserting a non-magnetic layer between a ground layer and a pinned layer to form the spin valve magnetoresistance effect film, the self-pinned spin valve magnetoresistance effect film having superior resistance to magnetic fields, a magnetic sensor using the same, and a rotation angle detection device are obtained.
    Type: Grant
    Filed: August 10, 2009
    Date of Patent: April 14, 2015
    Assignee: Hitachi Metals, Ltd.
    Inventors: Tomoki Ono, Yasunori Abe, Fumio Shirasaki
  • Patent number: 9007728
    Abstract: A method comprises providing a magnetic element including a free layer, a pinned layer, a nonmagnetic spacer layer between the free and pinned layers, and a pinning layer adjacent the pinned layer. The free layer is biased in a first direction. The pinned layer has a first layer having a first magnetization, a second layer having a second magnetization, and a nonmagnetic layer between the first and second layer. The first magnetization is pinned parallel to a second direction substantially perpendicular to the first direction and substantially perpendicular to the ABS. The second magnetization is antiparallel to the second direction. The pinning layer is oriented along the second direction. The method further comprises providing a hard bias structure having a hard bias magnetization, initializing the hard bias magnetization along the second direction, performing at least one thermal treatment, and resetting the hard bias magnetization substantially along the first direction.
    Type: Grant
    Filed: June 26, 2012
    Date of Patent: April 14, 2015
    Assignee: Western Digital (Fremont), LLC
    Inventors: Feng Liu, Prakash Mani, Christian Kaiser, Laurence L. Chen
  • Publication number: 20150055251
    Abstract: An apparatus disclosed herein includes a sensor with a free layer having cross-track easy axis anisotropy.
    Type: Application
    Filed: August 23, 2013
    Publication date: February 26, 2015
    Applicant: Seagate Technology LLC
    Inventors: Victor Boris Sapozhnikov, Mohammed Sharia Ullah Patwari
  • Patent number: 8947835
    Abstract: The invention provides a tunneling magnetoresistance (TMR) read sensor with a long diffusion path and ex-situ interfaces in a sense layer structure. The sense layer structure comprises a first sense layer preferably formed of a ferromagnetic Co—Fe film, a second sense layer preferably formed of a ferromagnetic Co—Fe—B film, and a third sense layer preferably formed of a ferromagnetic Ni—Fe film. The sense layer structure has a long diffusion path (defined as a total thickness of the first and second sense layers) and ex-situ interfaces for suppressing unwanted diffusions of Ni atoms. Alternatively, the sense layer structure comprises a first sense layer preferably formed of a ferromagnetic Co—Fe film, a second sense layer preferably formed of a ferromagnetic Co—Fe—B film, a third sense layer preferably formed of a ferromagnetic Co—Fe—B—Hf film, and a fourth sense layer preferably formed of a ferromagnetic Ni—Fe film.
    Type: Grant
    Filed: December 22, 2011
    Date of Patent: February 3, 2015
    Assignee: HGST Netherlands B.V.
    Inventor: Tsann Lin
  • Publication number: 20150030886
    Abstract: A magnetoresistive element according to an embodiment includes: a nonmagnetic conductive layer; a first magnetic layer connected to the nonmagnetic conductive layer; a second magnetic layer connected to the nonmagnetic conductive layer so as to be distant from the first magnetic layer; a third magnetic layer connected to the nonmagnetic conductive layer so as be distant from the first magnetic layer; and a first to third magnetic electrodes connected to the first to third magnetic layers respectively; a voltage being applied between the third magnetic electrode and the first magnetic electrode through the third magnetic layer, the nonmagnetic conductive layer, and the first magnetic layer, and a current being caused to flow between the third electrode and the second magnetic electrode through the third magnetic layer, the nonmagnetic conductive layer, and the second magnetic layer, the nonmagnetic conductive layer decreasing in volume toward the one end face.
    Type: Application
    Filed: July 23, 2014
    Publication date: January 29, 2015
    Inventors: Satoshi SHIROTORI, Yuuzo KAMIGUCHI, Masayuki TAKAGISHI, Shinobu SUGIMURA, Hitoshi IWASAKI
  • Publication number: 20140377588
    Abstract: The embodiments of the present invention generally relate to a magnetic head having a silicon seed layer disposed between a lower shield and a metallic underlayer to enhance the unidirectional anisotropy in an antiferromagnetic layer disposed over the metallic underlayer.
    Type: Application
    Filed: June 21, 2013
    Publication date: December 25, 2014
    Applicant: HGST NETHERLANDS B.V.
    Inventors: Koujiro KOMAGAKI, Kouichi NISHIOKA
  • Patent number: 8911888
    Abstract: Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. The data storage layers are each formed from a multi-layer structure. At ambient temperatures, the multi-layer structures exhibit an antiparallel coupling state with a near zero net magnetic moment. At higher transition temperatures, the multi-layer structures transition from the antiparallel coupling state to a parallel coupling state with a net magnetic moment. At yet higher temperatures, the multi-layer structure transitions from the antiparallel coupling state to a receiving state where the coercivity of the multi-layer structures drops below a particular level so that magnetic fields from write elements or neighboring data storage layers may imprint data into the data storage layer.
    Type: Grant
    Filed: December 16, 2007
    Date of Patent: December 16, 2014
    Assignee: HGST Netherlands B.V.
    Inventors: Olav Hellwig, Bruce D. Terris, Jan-Ulrich Thiele
  • Publication number: 20140363699
    Abstract: A current-perpendicular-to-plane magnetoresistive read sensor includes a stack of layers extending along a stacking direction, and an edge surface parallel to the stacking direction that forms at least part of a bearing surface of the read sensor, the bearing surface designed to face a recording medium. The stack of layers includes a first contact layer, a ferromagnetic free layer whose magnetic orientation varies according to an applied magnetic field, above the first contact layer, a non-magnetic layer above the ferromagnetic layer, a ferromagnetic spin injection layer above the non-magnetic layer, and a second contact layer above the spin injection layer, such that a current can flow between the second contact layer and the first contact layer along a current-perpendicular-to-plane direction, parallel to the stacking direction. The stack of layers further includes a series of structures extending along a direction parallel to the bearing surface and perpendicular to the stacking direction.
    Type: Application
    Filed: June 2, 2014
    Publication date: December 11, 2014
    Applicant: International Business Machines Corporation
    Inventors: Giovanni Cherubini, Simeon Furrer, Jens Jelitto, Mark A. Lantz
  • Publication number: 20140356648
    Abstract: A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets.
    Type: Application
    Filed: August 19, 2014
    Publication date: December 4, 2014
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Eric Walter Singleton, Jae-Young Yi, Konstantin Nikolaev, Victor Boris Sapozhnikov, Stacey Christine Wakeham, Shaun Eric McKinlay
  • Patent number: 8895162
    Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.
    Type: Grant
    Filed: September 19, 2011
    Date of Patent: November 25, 2014
    Assignees: Kabushiki Kaisha Toshiba, National University Corporation Tohoku University
    Inventors: Katsuya Nishiyama, Shigemi Mizukami, Terunobu Miyazaki, Hiroaki Yoda, Tadashi Kai, Tatsuya Kishi, Daisuke Watanabe, Mikihiko Oogane, Yasuo Ando, Masatoshi Yoshikawa, Toshihiko Nagase, Eiji Kitagawa, Tadaomi Daibou, Makoto Nagamine, Chunlan Feng
  • Publication number: 20140334041
    Abstract: A magnetoresistive element according to an embodiment includes: a magnetoresistance effect film including: a first magnetic film; a second magnetic film; and an intermediate film of a nonmagnetic material disposed between the first magnetic film and the second magnetic film, at least one of the first magnetic film and the second magnetic film being formed of a material expressed as AxB1-x(65 at %?x?85 at %) where A is an alloy containing Co and at least one element selected from Fe and Mn, and B is an alloy containing Si or Ge, a Si concentration in the at least one of the first magnetic film and the second magnetic film decreasing and a Ge concentration increasing as a distance from the intermediate film increases.
    Type: Application
    Filed: March 12, 2014
    Publication date: November 13, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Naoki HASE, Masayuki TAKAGISHI, Susumu HASHIMOTO, Shuichi MURAKAMI, Yousuke ISOWAKI, Masaki KADO, Hitoshi IWASAKI
  • Publication number: 20140335377
    Abstract: A magnetoresistive sensor having employing a Mn containing Huesler alloy for improved magnetoresistive performance in a structure that minimizes corrosion and Mn migration. The sensor can be constructed with a pinned layer structure that includes a lamination of layers of Co2MnX and CoFe, where X is Al, Ge or Si. The Co2MnX can be sandwiched between the layers of CoFe to prevent Mn migration into the spacer/barrier layer. The free layer can also be constructed as a lamination of Co2MnX and CoFe layers, and may also be constructed so that the Co2MnX layer is sandwiched between CoFe layers to prevent Mn migration.
    Type: Application
    Filed: July 23, 2014
    Publication date: November 13, 2014
    Applicant: HGST NETHERLANDS B.V.
    Inventor: Hardayal S. Gill
  • Publication number: 20140334029
    Abstract: A magnetoresistive element according to an embodiment includes: a magnetoresistance effect film including: a first and second magnetic films; and an intermediate film disposed between the first and second magnetic films, at least one of the first and second magnetic films being formed of a Heusler alloy expressed as Co100-x(AyB1.0-y)x (40 at %?x?60 at %, 0.3?y?0.7) where A is an alloy containing at least Fe and Mn, and B is an alloy containing at least Si, Al, and Ge, a composition of the at least one of the first and second magnetic films being changed in a film-thickness direction so that a ratio of Fe/(Fe+Mn) is less than 60% in a first region disposed near an interface with the intermediate film in the film-thickness direction, and is 60% or more in a second region that is disposed at more distance from the interface than the first region in the film-thickness direction.
    Type: Application
    Filed: February 28, 2014
    Publication date: November 13, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Naoki HASE, Masayuki TAKAGISHI, Susumu HASHIMOTO, Shuichi MURAKAMI, Yousuke ISOWAKI, Masaki KADO, Hitoshi IWASAKI
  • Publication number: 20140335376
    Abstract: A perpendicular magnetic recording medium, comprising: a substrate; a buffer layer deposited in a first orientation on top of the substrate; an underlayer deposited in a second orientation on top of the buffer layer, the underlayer comprising an electrically conductive oxide; and a magnetic recording layer deposited on top of the underlayer and having an axis of magnetic anisotropy substantially perpendicular to the surface thereof.
    Type: Application
    Filed: June 29, 2012
    Publication date: November 13, 2014
    Applicant: Western Digital Technologies, Inc.
    Inventors: BOLLAPRAGADA VALAPRASAD, Yukiko Takahashi, Kazuhiro Hono, Antony Ajan, Hua Yuan, Alexander S. Chernyshov
  • Patent number: 8871366
    Abstract: A protecting coating for a copper substrate is disclosed. The coating comprises seed layer comprising titanium ions that forms an “alloy-like” structure with the copper substrate. The coating further comprises a first layer of carbon disposed on the seed layer comprising titanium ions. A second layer comprising titanium is disposed on the first layer of carbon, and a second layer of carbon is disposed on the second layer comprising titanium.
    Type: Grant
    Filed: May 28, 2013
    Date of Patent: October 28, 2014
    Assignee: Seagate Technology LLC
    Inventors: Yongping Gong, Kristoffer Steven Scheponik
  • Patent number: 8871365
    Abstract: Enhanced Hc and Hk in addition to higher thermal stability to 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L10 alloys, or rare earth-transition metal alloys. The reference layer may be incorporated in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Dusting layers and a similar SAF design may be employed in a free layer for Ku enhancement and to increase the retention time of a memory cell.
    Type: Grant
    Filed: February 28, 2012
    Date of Patent: October 28, 2014
    Assignee: Headway Technologies, Inc.
    Inventors: Yu-Jen Wang, Witold Kula, Ru Ying Tong, Guenole Jan
  • Publication number: 20140300996
    Abstract: According to one embodiment, a magnetoresistance effect element includes a first shield, a second shield, a stacked unit, and a hard bias unit. The stacked unit includes a first magnetic layer provided between the first shield and the second shield, a second magnetic layer provided between the first magnetic layer and the second shield, and an intermediate layer provided between the and second magnetic layers. The hard bias unit is provided between the first shield and the second shield to be arranged with the stacked unit. A crystal orientation plane of the first magnetic layer in a film surface perpendicular direction is a cubic (110) plane. The first magnetic layer includes a first stacked body including a first Fe layer and a first Co layer stacked along the first direction, and a first Heusler alloy layer stacked with the first stacked body along the first direction.
    Type: Application
    Filed: March 10, 2014
    Publication date: October 9, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Shuichi MURAKAMI, Masayuki Takagishi, Yousuke Isowaki, Susumu Hashimoto, Naoki Hase, Masaki Kado, Hitoshi Iwasaki
  • Publication number: 20140302345
    Abstract: Tolerances for manufacturing reader structures for transducer heads continue to grow smaller and storage density in corresponding storage media increases. Reader stop layers may be utilized during manufacturing of reader structures to protect various layers of the reader structure from recession and/or scratches while processing other non-protected layers of the reader structure. For example, the stop layer may have a very low polish rate during mechanical or chemical-mechanical polishing. Surrounding areas may be significantly polished while a structure protected by a stop layer with a very low polish rate is substantially unaffected. The stop layer may then be removed via etching, for example, after the mechanical or chemical-mechanical polishing is completed.
    Type: Application
    Filed: June 19, 2014
    Publication date: October 9, 2014
    Inventors: Carolyn Pitcher Van Dorn, Thomas Roy Boonstra, Eric Walter Singleton, Shaun Eric McKinlay
  • Patent number: 8826515
    Abstract: A write head includes a first pole P1, a P1 pedestal, a first back gap layer plated on top of the first pole P1 leaving a region between the P1 pedestal and the first back gap layer for plating a coil. Further, a first insulation layer is applied on top of the P1 pedestal and the first back gap layer and the region between the P1 pedestal and the first back gap layer. The write head further includes a coil, patterned at least partially on top of the P1 pedestal and the first back gap layer and the region between the P1 pedestal and the first back gap layer, copper plated in the coil patterns, and a second insulation layer is applied to fill the spaces in between the coil turns. The resulting structure is planarized via chemical mechanical polishing.
    Type: Grant
    Filed: April 2, 2010
    Date of Patent: September 9, 2014
    Assignee: HGST Netherlands B.V.
    Inventors: Terence Tin-Lok Lam, David Kaimon Lee, Edward Hin Pong Lee, Changqing Shi
  • Patent number: 8830735
    Abstract: A magnetic memory includes: a magnetization fixed layer having perpendicular magnetic anisotropy, a magnetization direction of the magnetization fixed layer being fixed; an interlayer dielectric; an underlayer formed on upper faces of the magnetization fixed layer and the interlayer dielectric; and a data recording layer formed on an upper face of the underlayer and having perpendicular magnetic anisotropy. The underlayer includes: a first magnetic underlayer; and a non-magnetic underlayer formed on the first magnetic underlayer. The first magnetic underlayer is formed with such a thickness that the first magnetic underlayer does not exhibit in-plane magnetic anisotropy in a portion of the first magnetic underlayer formed on the interlayer dielectric.
    Type: Grant
    Filed: November 23, 2011
    Date of Patent: September 9, 2014
    Assignee: Renesas Electronics Corporation
    Inventors: Eiji Kariyada, Katsumi Suemitsu, Hironobu Tanigawa, Kaoru Mori, Tetsuhiro Suzuki, Kiyokazu Nagahara, Yasuaki Ozaki, Norikazu Ohshima
  • Publication number: 20140220385
    Abstract: The performance of an MR device has been improved by inserting one or more Magneto-Resistance Enhancing Layers (MRELs) into approximately the center of one or more of the magnetic layers such as an inner pinned (AP1) layer, spin injection layer (SIL), field generation layer (FGL), and a free layer. An MREL is a layer of a low band gap, high electron mobility semiconductor such as ZnO or a semimetal such as Bi. The MREL may further comprise a first conductive layer that contacts a bottom surface of the semiconductor or semimetal layer, and a second conductive layer that contacts a top surface of the semiconductor or semimetal layer.
    Type: Application
    Filed: April 4, 2014
    Publication date: August 7, 2014
    Applicant: Headway Technologies, Inc.
    Inventors: Kunliang Zhang, Min Li, Yuchen Zhou
  • Publication number: 20140212691
    Abstract: Various embodiments may be generally directed to a magnetic element capable of optimized magnetoresistive data reading. Such a magnetic element may be configured at least with a magnetoresistive stack that has an electrode lamination having at least a transition metal layer disposed between a magnetically free layer of the magnetoresistive stack and an electrode layer of the electrode lamination.
    Type: Application
    Filed: January 31, 2013
    Publication date: July 31, 2014
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Eric Walter Singleton, Liwen Tan, Jae-Young Yi
  • Patent number: 8778515
    Abstract: Embodiments of the present invention provide a practical magneto-resistive effect element for CPP-GMR, which exhibits appropriate resistance-area-product and high magnetoresistance change ratio, and meets the demand for a narrow read gap. Certain embodiments of a magneto-resistive effect element in accordance with the present invention include a pinned ferromagnetic layer containing a first ferromagnetic film having a magnetization direction fixed in one direction, a free ferromagnetic layer containing a second ferromagnetic film having a magnetization direction varying in response to an external magnetic field, an intermediate layer provided between the pinned ferromagnetic layer and the free ferromagnetic layer, and a current confinement layer for confining a current. At least one of the pinned ferromagnetic layer or the free ferromagnetic layer includes a highly spin polarized layer.
    Type: Grant
    Filed: November 21, 2008
    Date of Patent: July 15, 2014
    Assignee: HGST Netherlands B.V.
    Inventors: Yo Sato, Katsumi Hoshino, Hiroyuki Hoshiya
  • Patent number: 8766382
    Abstract: A free ferromagnetic data storage layer of an MRAM cell is coupled to a free ferromagnetic stabilization layer, which stabilization layer is directly electrically coupled to a contact electrode, on one side, and is separated from the free ferromagnetic data storage layer, on an opposite side, by a spacer layer. The spacer layer provides for the coupling between the two free layers, which coupling is one of: a ferromagnetic coupling and an antiferromagnetic coupling.
    Type: Grant
    Filed: January 27, 2011
    Date of Patent: July 1, 2014
    Assignee: Seagate Technology LLC
    Inventors: Haiwen Xi, Kaizhong Gao, Dimitar V. Dimitrov, Song S. Xue
  • Patent number: 8758909
    Abstract: A magnetoresistive element that includes a free ferromagnetic layer comprising a reversible magnetization directed substantially perpendicular to a film surface, a pinned ferromagnetic layer comprising a fixed magnetization directed substantially perpendicular to the film surface, and a tunnel barrier layer disposed between the free and pinned ferromagnetic layers, wherein the free and pinned layers contain at least one element selected from the group consisting of Fe, Co, and Ni, at least one element selected from the group consisting of V, Cr, and Mo, and at least one element selected from the group consisting of B, P, C, and Si, and wherein the free layer, the tunnel barrier layer, and the pinned layer have a coherent body-centered cubic structure with a (001) plane oriented, and a bidirectional spin-polarized current passing through the coherent structure in a direction perpendicular to the film surface reverses a magnetization direction of the free layer.
    Type: Grant
    Filed: April 20, 2012
    Date of Patent: June 24, 2014
    Inventor: Alexander Mikhailovich Shukh
  • Publication number: 20140154529
    Abstract: A magnetic read transducer including a magnetoresistive sensor is described, as well as a fabrication method thereof. The magnetoresistive sensor includes a cap layer overlaying a free layer. The cap layer is situated with a first thickness to absorb boron from the free layer. The magnetoresistive sensor is annealed, and boron is diffused from the free layer and absorbed by the cap layer, improving the magnetic performance of the free layer. The cap layer thickness is then reduced to a second thickness, thereby reducing the shield-to-shield (SS) stack spacing of the magnetoresistive sensor and allowing for increased areal recording density.
    Type: Application
    Filed: November 30, 2012
    Publication date: June 5, 2014
    Applicant: Western Digital (Fremont), LLC
    Inventor: Western Digital (Fremont), LLC
  • Publication number: 20140133052
    Abstract: A magnetic read head having a reduced read gap and a stable magnetic pinned layer structure. The sensor includes a seed layer that has a surface formed with an anisotropic texture. A magnetic pinned layer formed over the seed layer has a body centered cubic structure which causes the pinned layer structure to have a magnetic anisotropy with an easy axis oriented perpendicular to the air bearing surface when deposited over the textured seed layer. A magnetic free layer structure formed over the pinned layer structure and over a non-magnetic barrier layer has a face centered cubic structure which causes the magnetic free layer to have a magnetic anisotropy with an easy axis oriented parallel with the air bearing surface.
    Type: Application
    Filed: November 14, 2012
    Publication date: May 15, 2014
    Applicant: HGST NETHERLANDS B.V.
    Inventors: Kenichi Meguro, Keizo Kato, Susumu Okamura, Nobuo Yoshida
  • Publication number: 20140125332
    Abstract: A magnetostrictive layer system is suggested comprising at least one layer sequence comprising an anti-ferromagnetic, (AFM), layer and a magnetostrictive, ferromagnetic, FM, layer arranged directly thereon, wherein the layer sequence has an associated exchange bias, EB, field, the EB-induced degree of magnetization of the FM layer in the absence of an external magnetic field being within a range between 85% and 100%, and the angle ?opt, which is enclosed by the EB field direction and the magnetostriction direction, that has the maximum piezomagnetic coefficient in the absence of an external magnetic field, within a plane parallel to the AFM layer and the FM layer lies within a range between 10° and 80°.
    Type: Application
    Filed: June 20, 2012
    Publication date: May 8, 2014
    Applicant: CHRISTIAN-ALBRECHTS-UNIVERSITÄT ZU KIEL
    Inventors: Enno Lage, Dirk Meyners, Eckhard Quandt
  • Publication number: 20140120374
    Abstract: A device including a magnetoresistive sensor; a top shield; and a bottom shield, wherein the magnetoresistive sensor is positioned between the top shield and the bottom shield, and wherein at least one of the bottom shield and the top shield include NiFeX, wherein X is chosen from Nb, Mo, Ta, or W.
    Type: Application
    Filed: November 1, 2012
    Publication date: May 1, 2014
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Meng Zhu, Michael C. Kautzky
  • Patent number: 8687321
    Abstract: A magnetic head assembly includes: a magnetic recording head, a head slider, a suspension and an actuator arm. The magnetic recording head includes a spin torque oscillator and a main magnetic pole. The spin torque oscillator includes, a first magnetic layer including at least one selected from the group consisting of a Fe—Co—Al alloy, a Fe—Co—Si alloy, a Fe—Co—Ge alloy, a Fe—Co—Mn alloy a Fe—Co—Cr alloy and a Fe—Co—B alloy, a second magnetic layer, and an intermediate layer provided between the first magnetic layer and the second magnetic layer. The main magnetic pole is placed together with the spin torque oscillator. The magnetic recording head is mounted on the head slider. The head slider is mounted on one end of the suspension. The actuator arm is connected to other end of the suspension.
    Type: Grant
    Filed: March 26, 2009
    Date of Patent: April 1, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kenichiro Yamada, Hitoshi Iwasaki, Masayuki Takagishi, Tomomi Funayama
  • Publication number: 20140063648
    Abstract: In a Spin Torque Oscillator (STO) comprising an underlayer, a first magnetic layer disposed on the underlayer, a non-magnetic intermediate layer disposed on the first magnetic layer, and a second magnetic layer disposed on the non-magnetic intermediate layer, the non-magnetic intermediate layer is a non-magnetic alloy containing 50 at % or more of at least one kind of element selected from a first group consisting of Cu, Ag, and Au, and further at least 0.1 at % or more in total of at least one kind of element selected from a second group consisting of Cu, Ag, Au, Cr, Ti, Zr, Hf, V, Nb, Ta, Ru, Os, Pd, Pt, Rh, and Ir that does not overlap with the element from the first group.
    Type: Application
    Filed: August 6, 2013
    Publication date: March 6, 2014
    Applicant: HITACHI, LTD.
    Inventors: Yoshihiro SHIROISHI, Katsuro WATANABE, Yo SATO
  • Publication number: 20140049857
    Abstract: According to one embodiment, a magneto-resistance effect element includes: a first shield; a second shield; a first side shield layer; a second side shield layer; a stacked body; a first shield guide layer; and a second shield guide layer. The first shield guide layer includes a fifth magnetic layer provided between the first side shield layer and the stacked body. The second shield guide layer includes a sixth magnetic layer provided between the second side shield layer and the stacked body. A distance between the first side shield layer and the first shield guide layer is shorter than a distance between the stacked body and the first shield guide layer. A distance between the second side shield layer and the second shield guide layer is shorter than a distance between the stacked body and the second shield guide layer.
    Type: Application
    Filed: July 11, 2013
    Publication date: February 20, 2014
    Inventors: Yousuke ISOWAKI, Hitoshi Iwasaki, Masayuki Takagishi
  • Patent number: 8637170
    Abstract: A magnetic sensor comprises a support; a nonmagnetic conductive layer disposed on the support; a fixed magnetization layer disposed on a first part of the nonmagnetic conductive layer and on the support; a free magnetization layer disposed on a second part of the nonmagnetic conductive layer different from the first part and on the support; and a nonmagnetic low resistance layer, disposed on a part overlapping the nonmagnetic conductive layer in at least one of the fixed magnetization layer and free magnetization layer, having an electrical resistivity lower than that of the one layer.
    Type: Grant
    Filed: May 26, 2009
    Date of Patent: January 28, 2014
    Assignee: TDK Corporation
    Inventor: Tomoyuki Sasaki
  • Publication number: 20140004383
    Abstract: A current-perpendicular-to-plane (CPP) read sensor with Co—Fe buffer layers is proposed to improve pinning and magnetoresistance properties. The read sensor comprises first and second Co—Fe buffer layers in the lower and upper portions of a keeper layer structure, respectively, third and fourth Co—Fe buffer layers in the lower and upper portion of a reference layer structure, respectively, and a fifth Co—Fe buffer layer in the lower portion of a sense layer structure. The first buffer layer is adjacent to a pinning layer and has a specific composition to improve unidirectional-anisotropy pinning properties. The second and third buffer layers are adjacent to an antiparallel-coupling layer and have specific compositions to improve bidirectional-anisotropy pinning properties. The fourth and fifth buffer layers are adjacent to a barrier or spacer layer and have specific compositions to improve magnetoresistance properties.
    Type: Application
    Filed: August 30, 2013
    Publication date: January 2, 2014
    Applicant: HGST Netherlands B.V.
    Inventor: Tsann Lin
  • Publication number: 20130302649
    Abstract: [Problem to be Solved] To realize a spintronics device with high performance, it is an object of the present invention to provide a Co2Fe-based Heusler alloy having a spin polarization larger than 0.65, and a high performance spintronics devices using the same. [Solution] A Co2Fe(GaxGe1-x) Heusler alloy shows a spin polarization higher than 0.65 by a PCAR method in a region of 0.25<x<0.60 and it has a Curie temperature as high as 1288K. A CPP-GMR device that uses the Co2Fe(GaxGe1-x) Heusler alloy as an electrode exhibits the world's highest MR ratio, an STO device exhibits high output, and an NLSV device exhibits a high spin signal.
    Type: Application
    Filed: July 3, 2013
    Publication date: November 14, 2013
    Inventors: Yukiko Takahashi, Srinivasan Ananthakrishnan, Varaprasad Bollapragada, Rajanikanth Ammanabrolu, Jaivardhan Sinha, Masamitsu Hayashi, Takao Furubayashi, Shinya Kasai, Shigeyuki Hirayama, Seiji Mitani, Kazuhiro Hono
  • Publication number: 20130288076
    Abstract: A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets.
    Type: Application
    Filed: April 30, 2012
    Publication date: October 31, 2013
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Eric Walter Singleton, Jae-Young Yi, Konstantin Nikolaev, Victor Boris Sapozhnikov, Stacey Christine Wakeham, Shaun Eric McKinlay
  • Publication number: 20130236744
    Abstract: A current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor has a multilayer reference layer containing a Heusler alloy. The multilayer reference layer may be a simple pinned layer or the AP2 layer of an antiparallel (AP)-pinned structure. The multilayer reference layer is formed of a crystalline non-Heusler alloy ferromagnetic layer on either an antiferromagnetic layer (in a simple pinned structure) or an antiparallel coupling (APC) layer (in an AP-pinned structure), a Heusler alloy layer adjacent the sensor's nonmagnetic electrically conducting spacer layer, and an intermediate substantially non-crystalline X-containing layer between the crystalline non-Heusler alloy layer and the Heusler alloy layer. The element X is selected from one or more of tantalum (Ta), hafnium (Hf), niobium (Nb) and boron (B).
    Type: Application
    Filed: March 8, 2012
    Publication date: September 12, 2013
    Inventors: Elizabeth Ann Brinkman, Matthew J. Carey, Jeffrey R. Childress, Young-suk Choi, Brian R. York
  • Patent number: 8525601
    Abstract: An oscillator generates a signal using precession of a magnetic moment of a magnetic domain wall. The oscillator includes a free layer having the magnetic domain wall and a fixed layer corresponding to the magnetic domain wall. A non-magnetic separation layer is interposed between the free layer and the fixed layer.
    Type: Grant
    Filed: December 29, 2009
    Date of Patent: September 3, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-chul Lee, Mathias Klaui, Sun-ae Seo, Young-jin Cho, Ung-hwan Pi, Ji-young Bae, Jin-seong Heo
  • Publication number: 20130171475
    Abstract: A manner for stabilizing the shield domain structure is described that employs the magnetic field of a hard bias layer. More particularly, it has been found that the shield domain structure is stabilized when the height of the hard bias layer in the depth direction is made substantially half the height of upper shield layer. In another embodiment of the invention, a stabilizing structure is provided at approximately the midpoint of the shield in order to fix the closure domain of the shield to the desired two-domain structure. In an embodiment of the invention, the stabilizing structure is made convex or concave as viewed from the air-bearing surface.
    Type: Application
    Filed: December 30, 2011
    Publication date: July 4, 2013
    Applicant: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Koji Kataoka, Takashi Wagatsuma
  • Publication number: 20130161769
    Abstract: Magnetoresistive elements, and memory devices including the same, include a free layer having a changeable magnetization direction, a pinned layer facing the free layer and having a fixed magnetization direction, and an auxiliary element on a surface of the pinned layer. The auxiliary element has a width smaller than a width of the pinned layer, and a magnetization direction fixed to a direction the same as a direction of the fixed magnetization direction of the pinned layer.
    Type: Application
    Filed: August 22, 2012
    Publication date: June 27, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung-chul LEE, Kwang-seok KIM, Kee-won KIM, Young-man JANG, Ung-hwan PI
  • Patent number: 8456898
    Abstract: Techniques and magnetic devices associated with a magnetic element that includes a fixed layer having a fixed layer magnetization and perpendicular anisotropy, a nonmagnetic spacer layer, and a free layer having a changeable free layer magnetization and perpendicular anisotropy.
    Type: Grant
    Filed: December 5, 2011
    Date of Patent: June 4, 2013
    Assignee: Grandis Inc.
    Inventors: Eugene Youjun Chen, Shengyuan Wang