Abstract: A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with heat energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.

Abstract: Article comprising a substrate bearing a microlayer which comprises uniformly oriented, crystalline, solid, organic microstructures and a method for preparing said article. The microstructures may be mono- or polycrystalline. In the preferred embodiment, the microstructures are of uniform shape and size.The articles can be prepared by (1) depositing a vapor of an organic compound as a thin, continuous film onto a substrate to provide a composite, and (2) annealing the composite in a vacuum sufficiently such that a physical change is induced in the orginal deposited film to form the microstructures.The microlayer can be overcoated with other materials to provide desired properties to the article. The articles of this invention are useful for many forms of light trapping, energy absorption, imaging, data transmission and storage, and gradient index applications.

Abstract: Disclosed is an electrophotosensitive member and its preparing method. The electrophotosensitive member comprises an electrically conductive substrate, a photosensitive layer, and an overcoat layer having a rough surface with convexities and concavities. The number of convexities and concavities are about 500 to 3000 per 1 cm in a linear distance, and the maximum depth difference of the convexities and concavities is about 0.05 to 1.5 .mu.m. The rough surface having the convexities and concavities is formed directly on the overcoat layer. The electrophotosensitive member according to the present invention reduces the friction coefficient of the contacting area between the electrophotosensitive member and a cleaning device, and improves the durability of the overcoat layer and the photosensitive layer.

Abstract: There is a photosensor comprising: a photoconductive layer containing amorphous silicon provided on a substrate in which this photoconductive layer consists of laminated films of two or more layers having different refractive indexes and the refractive index of the lowest layer of the laminated films is not larger than 3.2 for the incident light of a wavelength of 6328 .ANG.; a pair of electrodes provided in electrical contact with the photoconductive layer; and a photo sensing section. A long size image sensor unit is constituted by a plurality of such photosensors arranged like an array, a matrix drive circuit to matrix-drive each photosensor, and a light source such as light emitting diodes or a fluorescent lamp to illuminate an original to be read.

Abstract: A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and halogen and an active species (B) formed from a chemical substance for film formation which is chemically mutually reactive with said active species (A) separately from each other, then providing them with heat energy and thereby allowing both the species to react chemically with each other to form a deposited film on the substrate.

Abstract: A process for preparing an electrophotographic imaging member comprising providing large particles of an alloy comprising selenium, tellurium and arsenic, the large particles having an average particle size of at least about 300 micrometers and an average weight of less than about 1000 mg, mechanically abrading the surfaces of the large particles while maintaining the substantial surface integrety of the large particles to form between about 3 percent by weight to about 20 percent by weight dust particles based on the total weight of the alloy prior to mechanical abrasion.

Abstract: An electrophotographic multi-layered photosensitive member having a top layer of hydrogenated amorphous silicon carbide and the method for forming the top layer are provided. The hydrogenated amorphous silicon carbide has an atomic ratio of carbon to carbon plus silicon C/(Si+C) ranging from 0.17 to 0.47 and a ratio of the number of hydrogen atoms bonded to a silicon atom per silicon atom, to number of hydrogen atoms bonded to a carbon atom per carbon atom, {(Si--H)/Si}/{(C--H)/C}, ranging from 0.3 to 1.0. The top layer is formed on a photosensitive member of hydrogenated amorphous silicon by employing a glow discharge CVD method. The gaseous mixture composed of disilane (Si.sub.2 H.sub.6) and propane (C.sub.3 H.sub.8) mixed with a mol ratio expressed as C.sub.3 H.sub.8 /(Si.sub.2 H.sub.6 +C.sub.3 H.sub.8) ranging from 0.2 to 0.6 is used. Another gaseous mixture is also used with an improved result. The mixture comprises disilane (Si.sub.2 H.sub.6) gas, propane (C.sub.3 H.sub.8) gas, and hydrogen (H.sub.

Abstract: An electrophotographic imaging member comprising providing a conductive substrate, an alloy layer comprising selenium doped with arsenic having a thickness of between about 100 micrometers and about 400 micrometers, the alloy layer comprising between about 0.3 percent and about 2 percent by weight arsenic at the surface of the alloy layer facing away from the conductive substrate and comprising crystalline selenium having a thickness of from about 0.01 micrometer to about 1 micrometer contiguous to the conductive substrate, and a thin protective overcoating layer on the alloy layer, the overcoating layer having a thickness between about 0.05 micrometer and about 0.3 micrometer and comprising from about 0.5 percent to about 3 percent by weight nigrosine. This photoreceptor is prepared by providing a conductive substrate, cleaning the substrate, heating an alloy comprising selenium and from about 0.

Abstract: A method for producing an electronic device having a multi-layer structure comprising one or more controlled band gap semiconductor thin layers formed on a substrate comprises forming at least one of said controlled band gap semiconductor thin layers according to the photo CVD method and forming at least one of the other constituent layers according to the method comprising introducing a gaseous starting material for film formation and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.

Abstract: The present invention provides a photosensitive member comprising a carrier transporting layer of hydrogen-containing carbon, which is excellent in a charge transportability, a chargeability, a rigidity and resistances to corona, acid, moisture and heat, and has so small residual potential.

Abstract: An image-forming member for electrophotography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Abstract: A function separation type photoconductor for use in electrophotography comprises an electroconductive substrate, a carrier generation layer vapor deposited on the substrate and a carrier transport layer formed on the carrier generation layer. The carrier generation layer is made of an indium phthalocyanine having the general formula ##STR1## wherein Me represents indium, and X is a halogen selected from the group consisting of chlorine, bromine and iodine.

Abstract: A photoconductor which comprises, on a conductive substrate, a photoconductive layer of amorphous silicon hydride to which a first impurity consisting essentially of an element of Group Va or Group VIa of the Periodic Table is added. The contents of the first impurity and hydrogen in the amorphous silicon hydride layer vary in section from one side toward the other side of said layer.

Abstract: A process for producing a photoconductive member comprises forming a photoconductive layer on a substrate for formation of a photoconductive layer by introducing starting substances for formation of a photoconductive layer under gaseous state into a deposition chamber maintained under a desired reduced pressure and exciting discharging under the gas atmosphere of said starting substances, characterized in that said starting substances are constituted of at least two compunds selected from the group consisting of the compounds of the formula:Si.sub.n H.sub.2n+2 (A)wherein n is a positive integer and the compounds of the formula:Si.sub.m H.sub.l X.sub.k (B)wherein m and k are positive integers, l is 0 or a positive integer, l+k=2m+2, and X represents a halogen atom, n and m being called "order number" hereinafter, and said starting substances to be introduced into said deposition chamber being controlled in amounts such that the proportion of the total of high order compounds is at least 1 vol.

Abstract: An arsenic-selenium photoreceptor is provided wherein said photoreceptor is characterized by a gradient concentration of arsenic increasing from the bottom surface to the top surface of the photoreceptor such that the arsenic concentration is about 5 wt. % at a depth of about 5 to 10 microns from the top surface of the photoreceptor and is about 30 to 40 wt. % at the top surface of the photoreceptor.

Abstract: A light-receiving member comprises a substrate and a light-receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms and a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductivity provided successively from the substrate side, said light-receiving layer having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being aranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction, said non-parallel interfaces being connected to one another smoothly in the direction in which they are arranged.

Abstract: A light-receiving member comprises a substrate and a light-receiving layer of a multi-layer structure having at least one photosensitive layer and a surface layer having reflection preventive function provided successively from the substrate side; said light-receiving layer having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being arranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction; said non-parallel interfaces being connected to one another smoothly in the direction in which they are arranged.

Abstract: The present invention relates to improvements in a substrate for producing an electrophotographic sensitive member having a photoconductive layer formed with amorphous silicon. An electrophotographic sensitive member, which is superior in moldability, corrosion resistance, strength, charging electric potential and the like, is formed when an aluminium material, which contains at least one of iron and manganese or a combination of each at 0.30 or less % by weight, is used as a substrate on which a photoconductive layer formed with amorphous silicon is laminated; and/or the surface roughness of said substrate is 0.5 S or less; and/or an aluminium substrate containing magnesium at 0.5 to 10.0% by weight is used.

Abstract: A photoreceptor for electrophotography utilizing a-Si:N:H:F, wherein a stable high-sensitive layer is provided and the time-lapse variation in characteristics is reduced in the use of an a-Si.sub.1-x N.sub.x layer as a sensitive layer.

Abstract: Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.

Abstract: A process for producing a photoreceptor is disclosed. A gaseous compound of the constituent materials of the photoreceptor is decomposed by glow discharge in the presence of a metal, thereby forming a constituent layer containing atoms and or ions of the metal.

Abstract: A method of manufacturing an electrophotographic photoreceptor having an amorphous silicon layer formed as a photoconductive layer, on an electrically conductive support member. The manufacturing method includes the steps of preparing the amorphous silicon layer as the photoconductive layer by employing Si.sub.2 H.sub.6 (disilane) as a main raw material gas through a glow discharge process, and simultaneously, adding nitrogen and boron to the main raw material gas, with the unsaturated bond being stabilized by hydrogen or hydrogen and fluorine.

Abstract: The present invention relates to an electrophotographic sensitive member comprising an amorphous fluorinated silicon photoconductive layer.

Abstract: A vapor-deposited film of selenium as a photoreceptor for electrophotography contains not more than 50 parts per million of oxygen. In producing the film, the oxygen content in the starting material selenium is controlled so that the resulting film contains oxygen within the specified range. The original oxygen content is reduced by vacuum distillation of the material selenium in a high vacuum, reduced-pressure distillation in high purity hydrogen, or preservation of the selenium shot in vacuo or in an inert gas. The starting material is obtained by mixing or melting selenium with a predetermined amount of selenium dioxide, or by carrying out vacuum distillation either of selenium at a vacuum degree of about 10.sup.-2 torr and thereby converting part of the material selenium into selenium dioxide, or of a mixture of selenium and a predetermined amount of selenium dioxide. The vacuum degree during the vapor deposition is controlled so that the oxygen content in the resulting film is 50 ppm or less.

Abstract: An electrophotographic imaging member comprising a substrate, a ground plane layer comprising a titanium metal layer contiguous to the substrate, a charge blocking layer contiguous to the titanium layer, a charge generating binder layer and a charge transport layer. This photoreceptor may be prepared by providing a substrate in a vacuum zone, sputtering a layer of titanium metal on the substrate in the absence of oxygen to deposit a titanium metal layer, applying a charge blocking layer, applying a charge generating binder layer and applying a charge charge transport layer. If desired, an adhesive layer may be interposed between the charge blocking layer and the photoconductive insulating layer.

Abstract: A photoconductive film comprises an azulenium salt represented by the general formula (1) ##STR1## wherein R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, R.sub.6, and R.sub.7 are each independently hydrogen, halo or a monovalent organic residue; or at least one of the combinations of R.sub.1 with R.sub.2, R.sub.3 with R.sub.4, R.sub.4 with R.sub.5, R.sub.5 with R.sub.6, and R.sub.6 with R.sub.7 may form an unsubstituted or substituted aromatic ring; R.sub.8 and R.sub.9 are each independently unsubstituted or substituted alkyl, aryl, or aralkyl; or R.sub.8 and R.sub.9, together with the nitrogen atom to which they are attached, may be joined to form an aromatic ring; R.sub.10, R.sub.11, R.sub.12, and R.sub.13 are each independently hydrogen, halo, alkyl, alkoxy, or hydroxyl; and n is 0, 1, or 2.

Abstract: A method for producing an image forming member having a deposited layer with photoconductivity formed on a support by introducing a starting material in gaseous state into a deposition chamber which is reduced to a desired pressure and exciting discharging in the gas atmosphere of said starting material, comprises constituting at least a part of said deposited layer of a layer (A) comprising silicon atoms, carbon atoms and hydrogen atoms, said layer (A) being formed of at least one of the compounds represented by the formula:R.sub.m Si.sub.n H.sub.2n+2-m (I)where R is an alkyl having 1 to 15 carbon atoms, m is an integer of 1 to 15, n is an integer of 1 to 5, and m and n satisfy the relation of 2n+2>m.

Abstract: An electrophotographic photosensitive member constituted of an electroconductive supporting substrate and a photoconductive layer provided on said substrate, said photoconductive layer being composed primarily of a microcrystalline silicon or a layered product of a microcrystalline silicon and an amorphous silicon.

Abstract: An improved method for the manufacture of a photoconductive insulating element comprising an electrically-conductive support, a barrier layer overlying the support, and a layer of doped hydrogenated amorphous silicon overlying the barrier layer, wherein the doped layer is formed by a process of plasma-induced dissociation of a gaseous mixture of a silane and a doping agent, and the dissociation is a temperature-controlled process in which deposition of a final portion of the doped layer is carried out at a temperature which is less than the temperature used in forming the initial portion of the doped layer. Control of the temperature of the deposition process in this manner provides a substantial increase in the dynamic exposure range of the element.

Abstract: A method of forming an amorphous silicon film includes the steps of bringing a gas which is pre-excited by electron cyclotron resonance generated by an alternating electric field and a magnetic field into contact with a raw material gas containing silicone atoms in a reaction chamber in which a substrate is placed, so that the raw material gas is converted to radicals, and forming an amorphous silicon film on a surface of the substrate by the reaction of radicals therewith. Microwaves can be used as the alternating electric field.

Abstract: A photoreceptor of electrophotography having, on a substrate, an amorphous silicon (a-Si) layer formed by relying on plasma CVD technique, wherein the a-Si layer is formed in the presence of silane, diborane and nitrogen, and possibly phosphine as required. This a-Si layer may have a multiple layer structure comprising a thin a-Si layer formed in the presence of silane and diborane or nitrogen, and a principal a-Si layer formed in the presence of silane, diborane and nitrogen, and possibly phosphine as required, but in such instance the amount of phosphine which is added is less than three times that of diborane. Such photoreceptor has a good sensitivity to light rays, has long service life, and is not harmful to human body.

Abstract: A method of forming an alloy layer on the surface of a substrate comprising forming in a vessel a molten bath comprising at least one vaporizable alloying component having a higher vapor pressure than at least one other vaporizable alloying component in said bath, forming a thin, substantially inert, liquid layer of an evaporation retarding film on the upper surface of said molten bath, said liquid layer of an evaporation retarding film having a lower or comparable vapor pressure than both said vaporizable alloying component having a higher vapor pressure and said other vaporizable alloying component on said substrate, co-vaporizing at least a portion of both said vaporizable alloying component having a higher vapor pressure and said other vaporizable alloying component whereby said evaporation retarding film retards the initial evaporation of said vaporizable alloying component having a higher vapor pressure, and forming an alloy layer comprising both said vaporizable alloying component having a higher vapor

Abstract: A layer of amorphous silicon containing H, preferably 10-40 atomic %H, is used as a photoconductive layer for electrophotographic photosensitive member.

Abstract: A process for depositing particles within a softenable layer to form a migration imaging member wherein the layer is softened by heating, exposed in a first deposition zone to a high impingement rate of vapors of selenium or selenium alloy moving along in a line of sight path from a selenium or selenium alloy source to form a sub-surface monolayer of spherical particles comprising the selenium or selenium alloy, removed from the first deposition zone prior to a substantial dropoff in transmission optical density, exposed to a lower impingement rate of vapors of selenium or selenium alloy in a second deposition zone to increase the size of the spherical particles while maintaining a narrow particle size distribution and achieving a high surface packing density thereby increasing the transmission optical density of the imaging member, and thereafter removed from the second deposition zone prior to a substantial dropoff in transmission optical density.

Abstract: An electrophotographic photoreceptor comprising a conductive layer and a photosensitive layer of vapor-deposited selenium-antimony alloy film formed thereon is disclosed. The photosensitive layer has an average antimony concentration of 5 to 21 wt % and the center layer thereof except for the skin layer on either side has a change in antimony concentration within 2 wt % in any region that is 1000 deep .ANG. from the surface of the skin layer.

Abstract: A method for fabricating an electrophotographic image forming member, wherein the first photoconductive layer consisting of an amorphous inorganic semiconductive material is formed on a substrate suited for the electrophotographic process, then the second photoconductive layer, which is different from the first photoconductive layer and consists of amorphous silicon containing therein silicon as the matrix and at least one of hydrogen and halogen atoms, is formed on the first photoconductive layer, and thereafter, the second photoconductive layer is annealed by irradiating a laser beam on the surface of the second photoconductive layer.

Abstract: A process for producing a photoconductive member, which comprises forming a photoconductive layer on a substrate for formation of a photoconductive layer by introducing starting substances for formation of a photoconductive layer under gaseous state into a deposition chamber maintained under a desired reduced pressure and exciting discharging under the gas atmosphere of said starting substances is characterized in that said starting substances are constituted of at least one substance selected from the first group consisting of substances(O) containing oxygen atoms as constituent atom, substances(N) containing nitrogen atoms as constituent atom and substances(C) containing carbon atoms as constituent atom, and at least two compounds selected from the second group consisting of the compounds of the formula:Si.sub.n H.sub.2n+2 (A)wherein n is a positive integer and the compounds of the formula:Si.sub.m H.sub.l X.sub.

Abstract: Disclosed is a method for removing an amorphous silicon photosensitive layer from the metallic surface (e.g., aluminum or stainless steel) of a substrate used in electrophotography. The amorphous silicon layer is removed by exposing such layer to a plasma generated in a fluorine containing atmosphere. Such a plasma provides a high etch rate for the amorphous silicon layer and an extremely high silicon-to-metal etch selectivity. Therefore, the amorphous silicon layer may be rapidly removed by etching at a high power density without risk of damaging the polished metallic surface of the electrophotographic substrate. Moreover, since the etching automatically stops when the metallic surface is reached, no end-point detection is necessary.

Abstract: Disclosed are method and apparatus for producing amorphous silicon layers for solar cells or electrophotography by plasma-enhanced chemical vapor deposition (CVD) through glow-discharge decomposition of a reaction gas containing monosilane or a higher order silicon hydride in a reaction chamber. Deposition rate and efficiency of reaction gas usage are improved by the selective removal of hydrogen gas reaction product from the reaction chamber. In one embodiment, a filter which is more permeable to hydrogen gas than to the reaction gas is placed in the vacuum pumping port of the reaction chamber. The filter comprises either a palladium film or a bundle of small diameter tubes made from a polyimide system polymer. In another embodiment of the invention, a porous sintered material containing La-Ni alloy is used to selectively adsorb hydrogen gas in the reaction chamber.

Abstract: A layer of amorphous silicon containing H, preferably 10-40 atomic % H, is used as a photoconductive layer for electrophotographic photosensitive member.

Abstract: Disclosed are method and apparatus for producing highly uniform films of photosensitive materials (e.g., amorphous silicon) for electrophotography on large diameter cylindrical metal substrates (e.g., aluminum or stainless steel) by plasma chemical vapor deposition (CVD). The cylindrical substrate is rotatably mounted in a reaction chamber and serves as an electrode. A hollow metallic second electrode in the reaction chamber coaxially surrounds the substrate and is spaced apart therefrom. Hydrogen gas is first introduced into the inter-electrode space between the substrate and the second electrodes, and a high-frequency electric field is applied to the two electrodes to generate a glow discharge for plasma cleaning of the substrate surface. The hydrogen gas is then pumped out of the reaction chamber, and a reaction gas of monosilane (SiH.sub.

Abstract: Disclosed is a photosensitive element for electrophotography comprised of a layered structure having a polycyclic quinone pigment dispersed in an organic resin binder as a charge generating layer and an organic charge transport layer mixed with a resin binder.

Abstract: An electrophotographic photoreceptor comprises an electrically conductive substrate, a layer of charge generating material which chloroaluminium phthalocyanine and chloroaluminium monochlorophthalocyanine are evaporated in a vacuum over the electrically conductive substrate and the evaporated film of chloroaluminium phthalocyanine and chloroaluminium monochlorophthalocyanine are treated by an organic solvent selected from the group consisting tetrohydrofurane, methanol, acetone, methyl ethyl ketone, .alpha.-chloronaphthalene, pyridine, a layer of charge transport material overcoated the layer of charge generating material. The electrophotographic photoreceptor and the preparation thereof is disclosed to apply for use in a laser printing machine in which a light of laser diode or light emission diode is used as a light source.

Abstract: In an electrophotographic plate comprising a substrate and a photoconductive layer formed on said substrate, when said substrate is made of an age-hardening type aluminum alloy and has a Vickers hardness of 60 Hv or higher, there can be produced electrophotographic plates high in dimensional accuracy, good in resistance to mechanical damages and impact, and very small in eccentricity when molded in the form of a drum. When the surface hardness of the selenium photoconductive layer is made 5 H or harder in pencil hardness, the resulting electrophotographic plate is excellent in printing performance and has a long life.

Abstract: A photoconductive member comprise a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar penetration of carriers from the side of the support into the photoconductive layer and to permit passage from the photoconductive layer to the support of photocarriers generated in the photoconductive layer by projection of electromagnetic waves and movement of the photocarriers toward the side of the support, and said intermediate layer being constituted of an amorphous material containing silicon atoms and carbon atoms as constituents.

Abstract: A photoconductive member comprises a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar penetration of carriers from the side of the support into the photoconductive layer and to permit passage from the photoconductive layer to the support of photocarriers generated in the photoconductive layer by projection of electromagnetic waves and movement of the photocarriers toward the side of the support, and said intermediate layer being constituted of an amorphous material containing silicon atoms and carbon atoms a constituents.

Abstract: A film type light receiving element and a method for producing such an element in which the electric current ratio for light and dark input intensities is large while the resistance of an optically transmissive electrode is made low. Belt-shaped metal electrodes and a photoconductive film are provided on a smooth surface of an insulating substrate. The optically transmissive electrode film layer is formed on the photoconductive film. A portion of the optically transmissive electrode film adjacent the photoconductive film has a high specific resistance while the remaining portion has a low specific resistance. To form the portion having a low specific resistance, the film is formed by sputtering in an oxygen partial pressure close to a value at which a minimum specific resistance is obtained while to form the portion having a high specific resistance, the oxygen partial pressure is set to a value higher than the value at which the minimum specific resistance is obtained.

Abstract: A method of making a photoconductive coating of the type which comprises a crystalline layer of wholly inorganic material on a suitable substrate for use as an electrophotographic member, said method including the steps of depositing the coating in a vacuum chamber by sputtering with R.F. energy in such a manner that the deposit is crystalline, with the individual crystals oriented substantially vertically, the size of the crystals being uniform and hexagonal in configuration and of the order of 700 to 800 Angstroms in diameter and with a barrier layer coating on the surface that is of extreme resistivity, each crystal acting independently as an independent field domain, the crystal length normal to the substrate being the same as the coating thickness and the deposit evidencing single crystal configuration in response to diffraction pattern measurements.

Abstract: A method of manufacturing a film type light receiving element in which the electric current ratio for light and dark input intensities is maximized. Metal electrodes and a photoconductive film are provided in the form of belt-shaped layers on a flat smooth substrate such as a quartz layer. An optically transmissive electrode film of a tin oxide compound is formed thereon in a magnetron type sputtering device. Utilizing the fact that the electric current ratio for light and dark input intensities of the light receiving element varies according to the oxygen partial pressure of the sputtering atmosphere in the sputtering device, the oxygen partial pressure is set close to a value at which the electric current ratio for light and dark input intensities is at a peak value.

Abstract: In a method for producing an electrophotographic recording material composed of a dual layer of amorphous and crystallized selenium applied to an electrically conductive substrate, tellurium is vapor-deposited in a vacuum onto the surface of the conductive substrate to a layer thickness of about 0.5 to about 5 nanometers to form a tellurium layer, and selenium is vapor-deposited onto the tellurium layer to a layer thickness of about 20 to about 100 microns to form the dual layer of amorphous and crystallized selenium.