Abstract: In a process for producing an electrophotographic recording material composed of a double layer of amorphous and crystallized selenium on an electrically conductive carrier, a layer of tellurium having a thickness of 10 to 500 nm is applied onto the surface of the carrier, and selenium is then vapor-deposited onto the tellurium layer to a thickness of 20 to 100.mu. to form the double layer.

Abstract: In the course of producing a thin film of amorphous silicon by high frequency sputtering elemental silicon under an atmosphere containing at least hydrogen gas, the temperature of the base plate onto which the amorphous silicon is deposited is maintained at a temperature of about 50.degree. C. to 150.degree. C. The thus obtained silicon film possesses not only photoconductivity sufficient for use as a photoconductor but also a large difference between photoconductivity and dard conductivity. In addition, a photoconductor of an amorphous silicon thin film can be produced at low cost without environmental pollution problems.

Abstract: An electrophotographic photoconductor comprising an electroconductive base and a photosensitive layer formed thereon, the photosensitive layer comprising a selenium-tellurium alloy with a concentration of tellurium in the range of 5 to 20 wt. % and halogen, with a concentration in the range of 5 to 500 ppm, selected from the group consisting of fluorine, chlorine, bromine and iodine, in the photosensitive layer, with the concentration of tellurium substantially uniform or increasing in the direction toward the surface of the photosensitive layer and the ratio of the concentration of tellurium near the electroconductive base to the concentration of tellurium near the surface of said photosensitive layer being 65 or more:100.

Abstract: An electrophotographic plate comprising a conductive substrate, a photoconductive-insulative layer overlaying the substrate and a transparent, electrically active, organic, electron transport layer overlaying the photoconductive-insulative layer in which the photoconductive layer comprises a Se--Te or Se--As mixture in the range of 90-97.5 atomic percent Se or 60-97.5 atomic percent, respectively, and wherein the thicknesses of the photoconductive layer and transport overlayer range between 40 to 100 micrometers and 1 to 5 micrometers, respectively.

Abstract: An electrophotographic photosensitive member having an amorphous deposition layer as a photoconductive layer, in which the amorphous deposition layer is formed by gradual increase in a substrate temperature during deposition of the photoconductive material.

Abstract: A member for electrostatographic reproduction formed of a substrate and having a photoconductive layer characterized by a sensitivity to light which is greater at the outer portions than at the center to compensate for fall-off at the extremes of radiation patterns.

Abstract: There is described an electrophotographic photoreceptor comprising a conductive metallic substrate, a composite interfacial structure made up of a layer comprising organic thermoplastic polymeric adhesive material and a thin layer of arsenic triselenide, and a photoconductive insulating layer comprising selenium or its alloys. The photoreceptor is formed by a method which includes depositing the arsenic triselenide layer while the substrate temperature is held at or above the softening point of the thermoplastic polymeric adhesive material but below the crystallization temperature of the arsenic triselenide and then depositing a layer of selenium or selenium alloy while the substrate temperature is held below the softening point of adhesive material and below the crystallization temperature of the selenium or selenium alloy.