Simultaneous Radiation Imaging And Etching Of Substrate Patents (Class 430/297)
  • Publication number: 20140308616
    Abstract: The present invention is primarily related to the composition of an aqueous etchant containing a precursor of oxidant and patterning methods for conductive circuits, in which the chemical structure of the precursor contains chlorine and can produce oxidants through various reactions. And, the patterned conductive circuits can be used for electronic devices, including printed electronics, sensors, displays, organic light emitting diodes (OLED), touch panels, electronic circuit boards, electrodes, electroluminescent (EL) films, antennas, and solar cells.
    Type: Application
    Filed: April 14, 2014
    Publication date: October 16, 2014
    Applicant: Polychem UV/EB International Corp.
    Inventors: Yung-Shu YANG, Chun-Chieh HAN
  • Patent number: 8835845
    Abstract: A method for TEM/STEM sample preparation and analysis that can be used in a FIB-electron microscope system without a flip stage. The method allows a dual beam FIB electron microscope system with a typical tilt stage having a maximum tilt of approximately 60° to be used to extract a TEM/STEM sample to from a substrate, mount the sample onto a sample holder, thin the sample using FIB milling, and rotate the sample so that the sample face is perpendicular to a vertical electron beam column for TEM/STEM imaging.
    Type: Grant
    Filed: June 1, 2007
    Date of Patent: September 16, 2014
    Assignee: FEI Company
    Inventor: Liang Hong
  • Patent number: 8632952
    Abstract: Provided are a photosensitive resin composition which is soluble in an alkaline aqueous solution and which has a good propagation loss in a visible light wavelength region, a photosensitive resin cured matter, a photosensitive resin film, a photosensitive resin film cured matter and an optical waveguide obtained by using the same. Provided are, to be specific, a photosensitive resin composition comprising (A) a vinyl polymer having at least one chain-polymerizable functional group in a molecule, (B) a polymerizable compound and (C) a polymerization initiator, wherein the component (C) is at least one selected from the group consisting of 2-[2-oxo-2-phenylacetoxyethoxy]ethyl oxyphenylacetate, 2-(2-hydroxyethoxy)ethyl oxyphenylacetate and oligo{2-hyroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]}propanone, a photosensitive resin cured matter, a photosensitive resin film, a photosensitive resin film cured matter and an optical waveguide obtained by using the same.
    Type: Grant
    Filed: November 17, 2008
    Date of Patent: January 21, 2014
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Kouji Suzumura, Tatsuya Makino, Atsushi Takahashi
  • Patent number: 8613999
    Abstract: A laser-engraveable composition comprises a laser-engraveable resin having dispersed therein non-crosslinked organic porous particles. These non-crosslinked organic porous particles have a non-crosslinked organic solid phase including an external particle surface and at least one set of discrete pores that are dispersed within the non-crosslinked organic solid phase. The laser-engraveable composition further comprises an infrared radiation absorber within at least some of the non-crosslinked organic porous particles.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: December 24, 2013
    Assignee: Eastman Kodak Company
    Inventors: Christine Joanne Landry-Coltrain, Mridula Nair
  • Patent number: 8394720
    Abstract: A plasma processing method includes modifying a resist pattern of the substrate; and trimming the modified resist pattern through a plasma etching. The modifying includes: supplying the processing gas for modification from the processing gas supply unit to the inside of the processing chamber while the substrate having a surface on which the resist pattern is formed is mounted on the lower electrode; supplying the high frequency power from the high frequency power supply to generate a plasma of the processing gas for modification; and supplying the negative DC voltage from the DC power supply to the upper electrode.
    Type: Grant
    Filed: September 3, 2009
    Date of Patent: March 12, 2013
    Assignee: Tokyo Electron Limited
    Inventor: Jin Fujihara
  • Patent number: 8338805
    Abstract: A reticle manufacturing method of the present invention comprises the steps of holding a reference mask blank by a reference chuck to measure a surface shape of the reference mask blank as a first surface shape, holding the reference mask blank by a reticle chuck of the exposure apparatus to measure a surface shape of the reference mask blank as a second surface shape, holding the electron beam drawing mask blank by the reference chuck to measure a surface shape of the electron beam drawing mask blank as a third surface shape, calculating a difference between the measurement values of the first surface shape and the second surface shape as a first deference value, calculating, as a forth surface shape, a surface shape of the electron beam drawing mask blank held by the reticle chuck on the basis of the first deference value and the measurement value of the third surface shape, and drawing the pattern on the electron beam drawing mask blank on the basis of the forth surface shape.
    Type: Grant
    Filed: February 17, 2010
    Date of Patent: December 25, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventor: Koichi Sentoku
  • Patent number: 8188428
    Abstract: A technique executes autofocus adjustment stably even when a plurality of patterns or foreign matter capable of being imaged only by a specific detector are included independently. Such an image as a concavo-convex image having a weak contrast can be picked up. The technique can automatically focus such an image even when it is difficult to find a focus position in the image. A scanning electron microscope includes a plurality of detectors for detecting secondary signals from a specimen when irradiated with an electron beam, and a calculation unit for combining the signals obtained from the detectors. At least two of the detectors are provided to be symmetric with respect to the electron beam. The focus of the electron beam is adjusted based on the signals of the detectors or on a signal corresponding to a combination of the signals.
    Type: Grant
    Filed: April 29, 2010
    Date of Patent: May 29, 2012
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Kohei Yamaguchi, Kenji Obara
  • Patent number: 7740280
    Abstract: In an embodiment, there is disclosed a product labeling system comprising: a first high energy electromagnetic or particle wave generator, at least one second high energy electromagnetic of particle wave generator; and a controller operatively configured to direct wave produced by said first generator and the wave produced by said second generator onto a portion of the subsurface of the product to mark the product at said subsurface without generating any substantial disruption of the surface of said product.
    Type: Grant
    Filed: April 28, 2008
    Date of Patent: June 22, 2010
    Inventor: Steven J. Moore
  • Patent number: 7675049
    Abstract: A coating is applied to a work piece in a charged particle beam system without directing the beam to work piece. The coating is applied by sputtering, either within the charged particle beam vacuum chamber or outside the charged particle beam vacuum chamber. In one embodiment, the sputtering is performed by directing the charged particle beam to a sputter material source, such as a needle from a gas injection system. Material is sputtered from the sputter material source onto the work piece to form, for example, a protective or conductive coating, without requiring the beam to be directed to the work piece, thereby reducing or eliminating damage to the work piece.
    Type: Grant
    Filed: February 14, 2007
    Date of Patent: March 9, 2010
    Assignee: FEI Company
    Inventors: Michael Schmidt, Jeff Blackwood
  • Patent number: 7626165
    Abstract: A focused ion beam apparatus includes a sample base for mounting a sample, a three axis stage capable of moving the sample base in three directions: along two axes on a horizontal face and a vertical axis, and a first focused ion beam barrel and a second focused ion beam barrel for irradiating the sample with focused ion beams, the first focused ion beam barrel and the second focused ion beam barrel being arranged such that directions of the focused ion beams are substantially opposed to each other in a plane view thereof and are inclined in substantial line symmetry with regard to the vertical axis in a side view thereof.
    Type: Grant
    Filed: February 7, 2007
    Date of Patent: December 1, 2009
    Assignee: SII Nano Technology Inc.
    Inventor: Kouji Iwasaki
  • Patent number: 7608387
    Abstract: An exemplary method for fabricating a mold core includes the following steps. First, a substrate is provided. Second, a photo resist layer is formed on the substrate, the photo resist layer has a top surface. Third, the photo resist layer is etched using a direct writing process to form the top surface thereof into a substantially aspherical stepped surface. Lastly, the photo resist layer is softened using a reflow process to transform the substantially aspherical stepped surface into a substantially aspherical smooth molding surface. Thereby, a mold core having the substantially aspherical smooth molding surface is obtained.
    Type: Grant
    Filed: January 15, 2009
    Date of Patent: October 27, 2009
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventor: Sei-Ping Louh
  • Publication number: 20090004579
    Abstract: The invention is a radiation curable liquid resin that can be used to make a clear and colorless, three-dimensional article by a stereolithography process. The clear and colorless three-dimensional articles have a clarity and transmittance of greater than about 67% as measured by UV-Visible spectrophotometer in the 400-500 nm range; and a lack of color as measured by a b* value of between about minus 0.5 (?0.5) and about positive 2.5 (+2.5) in the CIELAB color space using a spectrophotometer in the visible wavelengths of 400-750 nm.
    Type: Application
    Filed: June 27, 2007
    Publication date: January 1, 2009
    Applicant: DSM IP Assets B.V.
    Inventors: Satyendra Kumar Sarmah, Kevin Andrew Zaras
  • Patent number: 7361911
    Abstract: A device manufacturing method includes projecting a patterned beam of radiation through an optics compartment and a channel that provides an open connection between the optics compartment and a substrate compartment onto a substrate, maintaining an ionized flush gas at a higher pressure in the channel than in the substrate compartment and in the optics compartment during the projecting, intercepting particles that emanate from the substrate with the ionized flush gas, pumping the flush gas carrying the intercepted particles from the substrate compartment using a pump coupled to a gas outlet coupled to at least one of the compartments, and establishing an electrical potential difference between a wall of the channel and the outlet and/or a rotor of the pump so that the outlet and/or the rotor of the pump attracts positively charged ions that stem from the flush gas in the channel.
    Type: Grant
    Filed: December 9, 2004
    Date of Patent: April 22, 2008
    Assignee: ASML Netherlands B.V.
    Inventors: Johannes Hubertus Josephina Moors, Robertus Nicodemus Jacobus Van Ballegoij, Vadim Yevgenyevich Banine, Gert-Jan Heerens, Frederik Theodorus Elisabeth Heuts, Johannes Henricus Wilhelmus Jacobs, Paulus Martinus Maria Liebregts, Hendrik Antony Johannes Neerhof
  • Patent number: 7172803
    Abstract: The present invention relates to the laser inscription of a flexible inner support layer of a multilayered support unit, which is distinguished by the fact that the laser inscription of the inner support layer is carried out through one or more flexible outer laser-inactive support layers which are separate or can be separated from one another.
    Type: Grant
    Filed: July 25, 2003
    Date of Patent: February 6, 2007
    Assignee: Merck Patent GmbH
    Inventors: Roland Raupach, Rolf Eymann
  • Patent number: 6797635
    Abstract: A fabrication method for lines of a semiconductor device provides a substrate with a deposition layer already formed thereon, followed by forming a photoresist layer on the deposition layer. Photolithography is conducted with a mask to pattern the photoresist layer, wherein the photoresist layer is designed with the consideration of both the proximity effect and the microloading effect due to etching. Thereafter, using the patterned photoresist layer as an etching mask, an etching is conducted to form a plurality of lines. Since during the patterning of the photoresist layer, the proximity effect and the microlaoding effect are being considered, the difference in the linewidths between the dense feature region and the scattered feature region is minimized after the etching process.
    Type: Grant
    Filed: May 8, 2002
    Date of Patent: September 28, 2004
    Assignee: Macronix International Co., Ltd.
    Inventor: Tung-Cheng Kuo
  • Patent number: 6632587
    Abstract: A method of enhancing photoresist anti-etching ability, at least includes follows. Provide a substrate, form a photoresist with a pattern on the substrate, put both photoresist and substrate in a low pressure environment, and treat photoresist by an electron beam to let at least part of photoresist is hardened. This method usually is performed before etch process, but the method also could be modified as follows. Expose photoresist by an electron beam while an etching process being performed, or alternately expose photoresist by an electron beam and perform an etch process.
    Type: Grant
    Filed: May 22, 2001
    Date of Patent: October 14, 2003
    Assignee: Macronix International Co., Ltd.
    Inventor: Ching-Yu Chang
  • Publication number: 20030190536
    Abstract: The present invention relates to maskless photolithography using a patterned light generator for creating 2-D and 3-D patterns on objects using etching and deposition techniques. In an embodiment, the patterned light generator uses a micromirror array to direct pattern light on a target object. In an alternate embodiment, the patterned light generator uses a plasma display device to generate and direct patterned light onto a target object. Specifically, the invention provides a maskless photolithography system and method for photo stimulated etching of objects in a liquid solution, patterning glass, and photoselective metal deposition. For photo stimulated etching of objects in a liquid solution, the invention provides a system and method for immersing a substrate in an etchant solution, exposing the immersed substrate to patterned light, and etching the substrate according to the pattern of incident light.
    Type: Application
    Filed: June 25, 2002
    Publication date: October 9, 2003
    Inventor: David P. Fries
  • Publication number: 20020177075
    Abstract: A method of enhancing photoresist anti-etching ability, at least includes follows. Provide a substrate, form a photoresist with a pattern on the substrate, put both photoresist and substrate in a low pressure environment, and treat photoresist by an electron beam to let at least part of photoresist is hardened. This method usually is performed before etch process, but the method also could be modified as follows.
    Type: Application
    Filed: May 22, 2001
    Publication date: November 28, 2002
    Applicant: MACRONIX INTERNATIONAL CO., LTD
    Inventor: Ching-Yu Chang
  • Patent number: 6344309
    Abstract: A metal pattern is prepared by applying a polysilane composition comprising a polysilane, a carbon functional silane, and a solvent onto a substrate to form a patterned coating of the polysilane composition, attaching catalytic metal nuclei to the patterned coating, and immersing the substrate in an electroless plating bath for thereby chemically depositing a metal film on the patterned coating.
    Type: Grant
    Filed: October 22, 1999
    Date of Patent: February 5, 2002
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Motoo Fukushima, Kunio Ito, Shigeru Mori
  • Patent number: 6235541
    Abstract: Substrates are patterned with antibodies attached thereto at discrete locations from which absorption resistant coating is removed by selectively controlled mechanical scribing contact to avoid chemical removal so as to decrease fabrication costs and increase fabrication speed.
    Type: Grant
    Filed: May 6, 1999
    Date of Patent: May 22, 2001
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Robert A. Brizzolara
  • Patent number: 6144397
    Abstract: A laser marking method and an apparatus thereof which realize stamp processing with a beautiful appearance and a high precision, without reducing the manufacturing efficiency. The laser marking method comprises a step of sequentially displaying divisional patterns each corresponding to one scanning line of a first deflector, a step of sequentially scanning the divisional patterns with a laser beam from a laser oscillator by the first deflector, and a step of moving a stamp position on a work surface for every one of scanning transmission beams respectively transmitted through the divisional patterns, in a direction perpendicular to a scanning direction, by a second deflector, thereby to synthesize and stamp the divisional patterns.
    Type: Grant
    Filed: December 2, 1997
    Date of Patent: November 7, 2000
    Assignee: Komatsu Limited
    Inventors: Teiichirou Chiba, Masato Moriya, Akihiko Souda
  • Patent number: 6110651
    Abstract: A polysilane pattern-bearing substrate is prepared by the steps of (1) forming a polysilane film on a substrate, (2) subjecting the polysilane film to selective light exposure in the presence of a first solvent which does not dissolve polysilane, but dissolves siloxane, for converting the polysilane in selected areas to siloxane for thereby forming a pattern, (3) removing only the siloxane from the substrate of step (2) using a second solvent which does not dissolve polysilane, but dissolves siloxane, and (4) completely removing the second solvent. The polysilane pattern has a high degree of definition.
    Type: Grant
    Filed: December 10, 1998
    Date of Patent: August 29, 2000
    Assignee: Shin-Etsu Chemical, Co., Ltd.
    Inventors: Motoo Fukushima, Shigeru Mori
  • Patent number: 6066437
    Abstract: This invention relates to film which is lettered with a laser beam comprising at least one protective film which is transparent to the laser beam, at least one opaque layer which is ablated by the laser beam, and at least one contrast-forming layer on its bottom. The abatable layer is preferably a metallic layer and can have a color like the contrast-forming layer. The color of the metallic layer is different from the color of the contrast-forming layer. The contrast-forming layer is either applied, imprinted or varnished onto the metallic layer. The contrast-forming layer can be at least one plastic film. On a side of the contrast-forming layer facing away from the metallic layer there is an adhesive layer which is covered with a carrier material, for example, an adhesive-repellant carrier film.
    Type: Grant
    Filed: October 8, 1997
    Date of Patent: May 23, 2000
    Assignee: Schreiner Etiketten und Selbstklebetechnik GmbH & Co.
    Inventor: Robert Kosslinger
  • Patent number: 6020106
    Abstract: Transparent molded articles having a high-contrast laser inscription thereon are produced from a polymer mixture consisting ofA) from 40 to 99% by weight of a polymer of an alkyl ester of (meth)acrylic acid,B) from 1 to 50% by weight of a copolymer of styrene and acrylonitrile having an acrylonitrile content of from 8 to 30% by weight,C) from 0 to 50% by weight of rubber particles, andD) from 0 to 20% by weight of additives and processing auxiliaries, by preparing a transparent molded article from the polymer mixture, and exposing the transparent molded article to laser radiation.
    Type: Grant
    Filed: December 4, 1996
    Date of Patent: February 1, 2000
    Assignee: BASF Aktiengesellschaft
    Inventors: Graham Edmund Mc Kee, Martin Welz, Andreas Deckers, Daniel Wagner, Paul Otto Damm, Hans-Josef Oslowski
  • Patent number: 5945260
    Abstract: A method for manufacturing a liquid jet recording head includes a first process of forming an ink flow passage pattern on a substrate by a resin layer; a second process of forming a covering resin layer to cover a resin layer on the resin layer; a third process of forming an ink discharging port pattern by a material having resistance to an oxygen plasma on the surface of the covering resin layer; a fourth process of forming ink discharging ports by dry etching the resin layer by the application of the oxygen plasma with the ink discharging port pattern as a mask; and a fifth process of eluting the resin layer. This method enables the ink discharging ports to be formed without cutting the substrate and at the same time, the distance between the ink discharging pressure generating elements and the orifices to be controlled rigidly; hence making it possible to manufacture a liquid jet recording head having a stabilized discharging characteristic.
    Type: Grant
    Filed: December 16, 1996
    Date of Patent: August 31, 1999
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masashi Miyagawa, Norio Ohkuma, Hiroaki Toshima
  • Patent number: 5894058
    Abstract: An ultra-fine microfabrication method using an energy beam is based on the use of shielding provided by nanometer or micrometer sized micro-particles to produce a variety of three-dimensional fine structures which have not been possible by the traditional photolithographic technique which is basically designed to produce two-dimensional structures. When the basic technique of radiation of an energy beam and shielding is combined with a shield positioning technique using a magnetic, electrical field or laser beam, with or without the additional chemical effects provided by reactive gas particle beams or solutions, fine structures of very high aspect ratios can be produced with precision. The microfabrication method include radiating a Fast Atomic beam through a patterned photoresist Film to fabricate a pattern of 0.1 to 100 nm in a target object.
    Type: Grant
    Filed: June 6, 1997
    Date of Patent: April 13, 1999
    Assignees: Ebara Corporation, Yotaro Hatamura
    Inventors: Masahiro Hatakeyama, Katsunori Ichiki, Yotaro Hatamura
  • Patent number: 5886136
    Abstract: Disclosed herein is a pattern forming process comprising the steps of coating a substrate with a photosensitive resin composition comprising a polyamic compound having, at each terminal thereof, an actinic ray-sensitive functional group which has substituent groups each having a photopolymerizable carbon-carbon double bond, a photosensitive auxiliary having a photopolymerizable functional group, a photopolymerization initiator, and a solvent to form a film; subjecting the film to pattering exposure; and then developing the thus-exposed film with an alkaline developer or alkaline aqueous solution.
    Type: Grant
    Filed: March 17, 1997
    Date of Patent: March 23, 1999
    Assignees: Nippon Zeon Co., Ltd., Fujitsu Limited
    Inventors: Akira Tanaka, Masami Koshiyama, Kei Sakamoto, Yasuhiro Yoneda, Kishio Yokouchi, Daisuke Mizutani, Yoshikatsu Ishizuki
  • Patent number: 5858801
    Abstract: A patterned multiple antibody substrate for use in biosensors or immunosensors is produced by (1) coating an antibody-adsorbent substrate with a material that resists antibody adsorption, (2) using ion beam sputtering, laser ablation, or mechanical scribing to remove the coating at specific sites on the substrate, and then (3) adsorbing specific antibodies at the sites. The substrate is capable of detecting multiple chemical species simultaneously.
    Type: Grant
    Filed: March 13, 1997
    Date of Patent: January 12, 1999
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Robert A. Brizzolara
  • Patent number: 5804353
    Abstract: A process for making a multilayer flexographic printing plate which involves reinforcing and laser engraving a multilayer flexographic printing element.
    Type: Grant
    Filed: May 11, 1992
    Date of Patent: September 8, 1998
    Assignee: E. I. duPont de Nemours and Company
    Inventors: Stephen Cushner, Roxy Ni Fan, Ernst Leberzammer, John Anthony Quinn, Paul Thomas Shea, Carol Marie Van Zoeren
  • Patent number: 5798202
    Abstract: A process for making a single layer flexographic printing plate which involves reinforcing and laser engraving a single layer flexographic printing element.
    Type: Grant
    Filed: May 11, 1992
    Date of Patent: August 25, 1998
    Assignee: E. I. duPont de Nemours and Company
    Inventors: Stephen Cushner, Roxy Ni Fan, Ernst Leberzammer, Paul Thomas Shea, Carol Marie Van Zoeren
  • Patent number: 5741621
    Abstract: A process for preparing an image on a substrate by applying a photoimageable composition on a first substrate, wherein the photoimageable composition, having a solids content from 25 to 60 weight percent, contains a partially neutralized acid-containing polymer formed from a precursor polymer having an acid number from 90 to 160 prior to neutralization and wherein 1 to 15% of acid-containing groups of the precursor polymer are neutralized with base; an ethylenically unsaturated monomer; a photoinitiator or photoinitiating system, water; 0-5% by weight a solution polymer, based on the weight of total polymer present in the composition; and 0-25% by weight of an organic solvent based on the total weight of the organic solvent and water; wherein the liquid composition is present as a stable emulsion, and wherein the liquid composition has a Brookfield viscosity, at 25.degree. C.
    Type: Grant
    Filed: December 23, 1996
    Date of Patent: April 21, 1998
    Assignee: E. I. du Pont de Nemours and Company
    Inventors: Richard Joseph Kempf, John Haetak Choi, Harvey Walter Taylor, Jr.
  • Patent number: 5593815
    Abstract: A method of cleaving a semiconductor wafer is disclosed which includes coating a first photoresist on a front surface of a semiconductor wafer having a plurality of semiconductor laser elements formed on the semiconductor wafer, patterning the first photoresist so as to form guide mark patterns for cleaving, coating a second photoresist on a rear surface of the semiconductor wafer, removing an edge part located at the guide mark patterns for cleaving of the second photoresist, etching through the semiconductor wafer to form guide marks using the patterned first and second photoresists as masks, patterning the second photoresist to form stripe patterns in the rear surface, etching the rear surface of the semiconductor wafer so as to form V-shaped or dovetail shaped grooves, removing the first photoresist and the second photoresist, and cleaving the semiconductor wafer along the V-shaped or dovetail shaped grooves into bars, each bar being a semiconductor laser.
    Type: Grant
    Filed: February 17, 1995
    Date of Patent: January 14, 1997
    Assignee: Goldstar Co., Ltd.
    Inventor: Hyung S. Ahn
  • Patent number: 5553273
    Abstract: An optical proximity correction (OPC) routine that enhances the fidelity of VLSI pattern transfer operations such as photolithography and reactive ion etch (RIE) by predistorting the mask while biasing only critical features and eliminating, as much as possible, the creation of additional vertices. The OPC routine accomplishes corrections in a timely and cost effective manner on realistic data sets without causing unnecessary increase in data volume. The OPC method employs a series of shrink, expand and subtraction operations that separate complex computer aided design (CAD) data for a lithography mask or reticle into sets of basic rectangles. More particularly, the OPC method first identifies a plurality of gate regions in a CAD design. A plurality of design shapes in the CAD design are sorted according to geometric type. A plurality of sorted design shapes share at least one side with a second design shape. The sorted design shapes are then grouped according to width.
    Type: Grant
    Filed: April 17, 1995
    Date of Patent: September 3, 1996
    Assignee: International Business Machines Corporation
    Inventor: Lars W. Liebmann
  • Patent number: 5553274
    Abstract: An optical proximity correction (OPC) routine that enhances the fidelity of VLSI pattern transfer operations such as photolithography and reactive ion etch (RIE) by predistorting the mask while biasing only critical features and eliminating, as much as possible, the creation of additional vertices. The OPC routine accomplishes corrections in a timely and cost effective manner on realistic data sets without causing unnecessary increase in data volume. The OPC method employs a series of shrink, expand and subtraction operations that separate complex computer aided design (CAD) data for a lithography mask or reticle into sets of basic rectangles. More particularly, the OPC method first identifies a plurality of gate regions in a CAD design. A plurality of design shapes in the CAD design are sorted according to geometric type. A plurality of sorted design shapes share at least one side with a second design shape. The sorted design shapes are then grouped according to width.
    Type: Grant
    Filed: June 6, 1995
    Date of Patent: September 3, 1996
    Assignee: International Business Machines Corporation
    Inventor: Lars W. Liebmann
  • Patent number: 5534371
    Abstract: A repaired laser ablation mask is disclosed capable of withstanding laser fluences in the range from about 200 mJ/cm.sup.2 to at least 500 mJ/cm.sup.2. The repaired mask comprises a single or multiple layers of apertured metal, such as, aluminum, on a quartz substrate. The laser mask repair technique and structure are also disclosed. The thickness of the metal layer, such as, aluminum layer, is in the range from about 2 microns to about 6 microns. A laser projection etching technique is also disclosed for using the repaired ablation mask.
    Type: Grant
    Filed: May 22, 1995
    Date of Patent: July 9, 1996
    Assignee: International Business Machines Corporation
    Inventors: Rajesh S. Patel, Laertis Economikos
  • Patent number: 5484686
    Abstract: The present invention provides an optical recording medium using an amorphous-crystalline phase-change for recording and erasing, wherein reflectivity of an optical recording medium-constituting recording film in an amorphous state is larger than that of the optical recording medium-constituting recording film in a crystalline state, or wherein absorptivity of an optical recording medium-constituting recording film in an amorphous state is smaller than that of the optical recording medium-constituting recording film in a crystalline state.
    Type: Grant
    Filed: March 4, 1994
    Date of Patent: January 16, 1996
    Assignee: Hitachi, Ltd.
    Inventors: Yoshihito Maeda, Isao Ikuta, Hisashi Andoh, Masaichi Nagai, Yoshimi Katoh, Yoshio Sato, Nobuyoshi Tsuboi, Hiroyuki Minemura
  • Patent number: 5441836
    Abstract: A laser ablation mask repair method. Defects (holes) are located in a dielectric mask. The surface of the mask above the defect is melted with a CO.sub.2 laser to form a depression in the surface. The depression forms a lens which diffuses ablation laser energy instead of transmitting it. Thus, the ablation laser is prevented from ablating a polymer ablation layer, because the holes are blocked and, the mask is repaired. The method may also be used to make Engineering Changes (EC) laser ablation masks.
    Type: Grant
    Filed: March 30, 1994
    Date of Patent: August 15, 1995
    Assignee: International Business Machines Corporation
    Inventors: James G. Balz, John R. Lankard, Sr., Mark J. LaPlante
  • Patent number: 5393645
    Abstract: Structured polymer layers having nonlinear optical properties are produced by a process wherein either organic compounds containing ethylenically unsaturated groups are subjected to free radical copolymerization (A) with stilbene, azo or azomethine compounds containing ethylenically unsaturated groups and donor and acceptor groups, or organic compounds containing ethylenically unsaturated groups are subjected to free radical polymerization and are mixed (B) with stilbene, azo or azomethine compounds containing ethylenically unsaturated groups and donor and acceptor groups, the copolymers (A) or mixtures (B) thus obtained are exposed imagewise to high-energy radiation, the unexposed parts are removed and the structured polymer layers thus obtained are polarized in an electric field for orientation of the chromophoric structural units in the region of the glass transition temperature of the polymer and crosslinked in an applied electric field.
    Type: Grant
    Filed: December 16, 1993
    Date of Patent: February 28, 1995
    Assignee: BASF Aktiengesellschaft
    Inventors: Karl-Heinz Etzbach, Heike Kilburg, Hans-Joachim Lorkowski, Karl Pfeiffer
  • Patent number: 5328811
    Abstract: A method of printing an image on a substrate by applying to the substrate a film which is chemically activated by heat, and scanning the film by a beam of radiation according to the image to be printed, to chemically activate the film by heat and thereby to produce a pattern in the film according to the image scanned. The film includes a reagent capable of undergoing a redox reaction when heated in the presence of another reagent present with the film when scanned by the beam, to produce the redox reaction between the two reagents.
    Type: Grant
    Filed: June 24, 1992
    Date of Patent: July 12, 1994
    Assignee: Orbotech Ltd.
    Inventor: Mordechai Brestel
  • Patent number: 5310624
    Abstract: Dry, laser-based, lithographic techniques and systems for patterning a surface of a wafer or other substrate are disclosed. The techniques and systems are particularly adapted for automated micro-fabrication of integrated circuits on semiconductor wafers. The invention entails dry depositing a resist material on a surface of a substrate, then generating a pattern in the resist material by selectively exposing the resist material to pulsed UV laser radiation, controlling the ambient exposure of the resist material between the resist-depositing and pattern-generating steps, and, finally, transferring the pattern from the resist to the substrate or otherwise employing the pattern to transform the substrate by deposition or implantation of materials.
    Type: Grant
    Filed: July 31, 1992
    Date of Patent: May 10, 1994
    Assignee: Massachusetts Institute of Technology
    Inventor: Daniel J. Ehrlich
  • Patent number: 5229320
    Abstract: Disclosed is a method which enabled the precise formation of a group of quantum dots. A device which functions on the principle of a transmission type electron microscope is used to produce a beam of electrons which are passed through a thin crystal membrane in order to produce an electron beam diffraction image. The energy distribution of the diffracted electron beam is used to produce masks, enable epitaxial growth and dry etching involved with the microscopic fabrication operations. For example, a thin GaAs membrane is used to form a diffracted electron beam image on a GaAs layer formed on a substrate. Carbon is then supplied and used to form carbon layers on the the locations where the beam energy is strongest. These carbon layers are used as a mask which allow selective etching of the GaAs layer.
    Type: Grant
    Filed: July 28, 1992
    Date of Patent: July 20, 1993
    Assignee: Sony Corporation
    Inventor: Ryuichi Ugajin
  • Patent number: 5215864
    Abstract: A method and apparatus for engraving a metal plate in two or more colors. Selected areas of an oxidized aluminum plate are colored by a first dye to which the plate has an affinity. The selected areas may then be sealed by hydration. Portions of the selected areas of the colored oxidized aluminum plate can then be further engraved by the application of a focussed laser beam, which removes any of the first dye and the sealant, thereby restoring the affinity of the selected portions of the plate. The areas of the plate having an affinity for dyes can be colored by secondary and additional colors and shades thereof.
    Type: Grant
    Filed: September 28, 1990
    Date of Patent: June 1, 1993
    Assignee: Laser Color Marking, Incorporated
    Inventor: Peter Laakmann
  • Patent number: 5102776
    Abstract: An x-ray microlithography method and apparatus for integrated circuit wafers is disclosed in which an isotropic x-ray source is formed at the cross point of two crossed conductors. When a high current is passed through the conductors they vaporize and breakdown to form an ionized plasma which is hot enough at the cross point that K-shell x-ray radiation is released uniformly in all directions. The magnetic pressure caused by the current flow at the cross point is strong enough to collapse or pinch the plasma radially so that the x-ray source spot is very small in size and can provide high resolution exposure of an integrated circuit photoresist pattern. Due to the isotropic nature of the x-ray source, multiple circuit wafers can be exposed with a single x-ray pulse by disposing them radially around the source.
    Type: Grant
    Filed: November 9, 1989
    Date of Patent: April 7, 1992
    Assignee: Cornell Research Foundation, Inc.
    Inventors: David A. Hammer, Daniel H. Kalantar, Nian-Sheng Qi
  • Patent number: 5091286
    Abstract: An electrical component includes a plurality of laminated layers of ferrite material, each layer having a conductive coil printed thereon. The conductive coil is formed by first printing a conductive sheet material on top of the ferrite layer, and then by exposing the conductive sheet material to a burst of laser energy focused in a predetermined pattern which cuts the coil out of the conductive sheet member.
    Type: Grant
    Filed: September 24, 1990
    Date of Patent: February 25, 1992
    Assignee: Dale Electronics, Inc.
    Inventor: Herman R. Person
  • Patent number: 5081002
    Abstract: The sensitivity of localized photochemical etching to the optical and electrical properties of multilayered semiconductor materials is utilized for selectively etching a laterally extending undercut in a buried layer. The semiconductor body is immersed in a suitable etching solution and a beam of light of appropriate wavelength and intensity is directed onto the semiconductor solution interface. The buried layer has a longer diffusion length for photogenerated carriers than the layers adjacent thereto, casuing carriers to diffuse away from the illuminated region within the buried layer and thereby etch the buried layer laterally, undercutting the adjacent layers.
    Type: Grant
    Filed: April 24, 1989
    Date of Patent: January 14, 1992
    Assignee: The Trustees of Columbia University in the City of New York
    Inventors: Mark N. Ruberto, Alan E. Willner, Richard M. Osgood, Jr., Dragan V. Podlesnik
  • Patent number: 5043251
    Abstract: A process of three dimensional lithography in amorphous polymers to form an instantaneous, permanent image in the polymer by the steps of providing an undoped, non-crystalline layer or film of a polymer having a stable amorphous state under human operating conditions. The film is preferably poly(ethyleneterphthalate) (PET), poly(aryl-ether-ether-ketone) (PEEK), poly(chloro-trifluoroethylene) (Kel-F.RTM.), poly(carbonate) (ie LEXAN 9032.RTM.), poly(sulfone), poly(methylmethacrylate(PMMA, or LUCITE.RTM.), a poly(cyanurate) such as bisphenol A dicyanate, or an epoxy (eg. Epon 820.RTM.). The film can be either self supporting or mounted on a substrate. The film is then covered (and optionally contacted) with a mask which serves to block the radiation from impinging on where no marking is desired. If the mask is in actual contact with the film, it is capable of also acting as a heat sink.
    Type: Grant
    Filed: November 29, 1989
    Date of Patent: August 27, 1991
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Mark F. Sonnenschein, Charles M. Roland
  • Patent number: 5039593
    Abstract: Poly(silyl silanes) have been prepared. They have high photosensitivity and excellent resistance to oxygen-reactive ion etching processes. They are useful as photodepolymerizable photoresists, barrier layers, etc.
    Type: Grant
    Filed: March 31, 1989
    Date of Patent: August 13, 1991
    Inventor: John K. Zeigler
  • Patent number: 4998267
    Abstract: Unwanted distortion of the planar configuration of a carbon-based X-ray lithography mask, that would otherwise occur during selective etching of the (silicon) support substrate, is prevented by incorporating a compensation layer of inorganic material that effectively offsets the internal compressive stress characteristic of the carbon. For this purpose, on a top, planar surface of a silicon substrate, a multiple layer structure containing a first layer of carbon having an internal compressive stress characteristic and a second layer of inorganic material having an internal tensile stress characteristic, is plasma-deposited. The tensile stress characteristic of the inorganic layer compensates for the compressive stress characteristic of the carbon layer and causes the composite structure to retain its substantially planar configuration after the underlying silicon substrate has been etched in the course of obtaining a rim structure on which the X-ray transmissive structure is supported.
    Type: Grant
    Filed: June 23, 1989
    Date of Patent: March 5, 1991
    Assignee: Korea Electronics & Telecommunications Research Inst.
    Inventors: Jaesin Lee, Jinyung Kang
  • Patent number: 4943344
    Abstract: A deep trench is formed by carrying out etching by using an etching gas free of carbon and silicon, which contains at least one member selected from the group consisting of fluorine, chlorine and bromine, while maintaining an article to be etched at such a temperature that the reaction probability between silicon and fluorine, chlorine or bromine contained in the etching gas is less than 1/10 of the reaction probability at 20.degree. C. According to this method, a deep trench having a very narrow width and a large aspect ratio, which cannot be formed according to the conventional method, can be formed very promptly with much reduced side etching.
    Type: Grant
    Filed: June 6, 1989
    Date of Patent: July 24, 1990
    Assignee: Hitachi, Ltd.
    Inventors: Shinichi Tachi, Kazunori Tsujimoto, Sadayuki Okudaira, Kiichiro Mukai
  • Patent number: 4897336
    Abstract: A self-developing radiation resist having extremely high sensitivity to energetic radiation, which resist is resistant to dry etching. The energetic radiation includes electron beam radiation, ion beam radiation, x-ray radiation, and gamma ray radiation. The resist is substantially amorphous; it has extremely high values of G.sub.s and G.sub.m, whereG.sub.s =number of main chain scission/100 electron volts absorbedandG.sub.m =number of monomers liberated/100 electron volts absorbed.The resist is end-capped to render it thermally stable and typically is cross-linked to reduce dry etching. The polymer that forms the resist includes an oxygen heteroatom linear chain organic polymer having haloalkyl substituents and is adapted to depolymerize in the absence of photoinitiators.
    Type: Grant
    Filed: December 8, 1987
    Date of Patent: January 30, 1990
    Inventor: James C. W. Chien