Abstract: Methods to reduce the write time for forming mask patterns having angled and non-angled features using electron beam lithography are disclosed. In one exemplary embodiment, non-angled features of the mask pattern are formed by exposure to an electron beam. The orientation of the substrate and a path of the generally rectangular-shaped shot from the electron beam may be relatively altered such that the substrate is exposed to the electron beam to form the angled features as if they were non-angled features. In another exemplary embodiment, the electron beam lithography system determines whether it is necessary to relatively alter the orientation of the substrate and a path of the generally rectangular-shaped shot from the electron beam to form the angled features based on the number of angled features and the time required for relatively altering the orientation. Electron beam lithography systems employing a rotatable stage, rotatable apertures, or both, are disclosed.

Abstract: An aspect of the present invention includes a method of lithography to enhance uniformity of critical dimensions of features patterned onto a workpiece. Said workpiece is coated with a coating sensitive to electromagnetic radiation. An electromagnetic radiation source having an illumination intensity is provided. At least one object pixel of electromagnetic radiation is created. A predetermined pattern is exposed, by using said at least one object pixel, on at least a portion of said workpiece in a first exposure pass with a first dose to provide less than full exposure of said coating sensitive to electromagnetic radiation. Said exposing action is repeated at least until said portion of said coating sensitive to electromagnetic radiation is fully exposed, wherein said dose is increased for every following pass. Said fully exposed coating sensitive to electromagnetic radiation is developed.

Abstract: An edge-covering composition for covering the cut surfaces of a photosensitive printing element to prevent premature curing of the cut surfaces during a process of manufacturing the printing element. The edge-covering composition is an emulsion comprising one or more emulsifiers, one or more-ultraviolet radiation-absorbing materials, optionally, a coloring agent, and optionally, one or more additional additives. The emulsion compositions are easy to apply, non-toxic, inexpensive, and are largely compatible with the solvents used to wash uncured photopolymer from the printing elements during processing.

Abstract: A method for increasing etching selectivity of a developed silicon-containing photoresist layer on a non-silicon containing photoresist layer on a substrate. The developed silicon-containing photoresist layer includes polymer chains containing silicon. Next, the developed silicon-containing photoresist layer and uncovered portions of the non-silicon containing photoresist layer are exposed to an ultraviolet (UV) light, where the UV light emanates from a UV generating agent, such as neon, xenon, helium, hydrogen, or krypton gas in an inert gas (e.g., argon, etc.) plasma. A top portion of the developed silicon-containing photoresist layer is then converted to a hardened layer, where the hardened layer is created by cross-linking the polymer chains containing silicon and the cross-linking is activated by the UV light. Next, an etch is performed on the uncovered portions of the non-silicon containing photoresist layer and the substrate using the hardened layer.

Abstract: The present invention is to provide an image forming method for a planographic printing plate. In the method, a planographic printing plate precursor in which an image recording layer containing a thermally sensitive and thermally curable material is formed on an aluminium support is scanning exposed with a relatively weak laser beam, and a latent image is formed, which is composed of an image recording layer part whose surface layer is thermally cured corresponding to an image and an unexposed image recording layer part which is not thermally cured. The unexposed image recording layer part which is not thermally cured is then removed by simple water development. Then, by carrying out heating, the whole image recording layer part remaining on the surface of the aluminum support is uniformly cured and firmly fixed. The invention also provides an image forming apparatus for a planographic printing plate.

Abstract: The present invention relates to methods for patterning substrates, such as reticles, masks or wafers, which reduce critical dimension variations, improving CD uniformity. In particular, it relates to tuning doses applied in passes of a multipass writing strategy to measurable characteristics of resists or radiation sensitive layers applied to the substrates. Particular writing strategies are described. Aspects of the present invention are described in the claims, specification and drawings.

Abstract: Novel ester compounds having formula (1) wherein A1 is a polymerizable functional group having a double bond, A2 is furandiyl, tetrahydrofurandiyl or oxanorbornanediyl, R1 and R2 each are a monovalent hydrocarbon group, or R1 and R2 may bond together to form an aliphatic hydrocarbon ring with the carbon atom, and R3 is hydrogen or a monovalent hydrocarbon group which may contain a hetero atom are polymerizable into polymers. Resist compositions comprising the polymers are sensitive to high-energy radiation, have an improved sensitivity, resolution, and etching resistance, and lend themselves to micropatterning with electron beams or deep-UV rays.

Abstract: It is very difficult to produce a negative wall angle from either negative or positive-tone chemically amplified resists, especially by e-beam lithography. This problem has now been overcome by first forming a photoresist pedestal in the conventional way, followed by flood exposing with electrons. Then, a second development treatment is given. This results in removal of additional material from the sidewalls, said removal being greatest at the substrate and least at the pedestal's top surface, resulting in negatively sloping sidewalls. Application of this method to a process for forming a pole tip for a vertical magnetic writer is also discussed.

Abstract: A polymer used for a negative type resist composition having a first repeating unit of a Si-containing monomer unit, a second repeating unit having a hydroxy group or an epoxy ring and copolymerized with the first repeating unit is provided. The first repeating unit is represented by the following formula: wherein R1 is a hydrogen atom or a methyl group, X is a C1–C4 alkyl or alkoxy group, and n is an integer from 2 to 4. Also, there is provided a negative type resist composition including the polymer which is an alkali soluble base polymer, a photoacid generator and a crosslinking agent cross linkable in the presence of an acid.

Abstract: In a method of forming a holographic grating, a photoresist layer is formed on an optical substrate, and a resist pattern is formed in the photoresist layer to have grooves depth deeper than a predetermined depth of diffraction grating grooves to be formed. Then, the photoresist layer with the resist pattern is etched by an ion beam generated by a mixed gas containing a fluorine based gas and oxygen until the resist pattern is substantially completely disappears. Thus, the diffraction grating grooves having the predetermined depth are directly engraved on the optical glass plate.

Abstract: A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.

Abstract: A method of multiphoton photosensitizing a photoreactive composition comprises irradiating the composition with light sufficient to cause simultaneous absorption of at least two photons, thereby inducing at least one acid- or radical-initiated chemical reaction where the composition is exposed to the light. The composition comprises: (a) at least one reactive species that is capable of undergoing such reaction; and (b) at least one multi-component, multiphoton photoinitiator system.

Abstract: Photoresist polymers and photoresist compositions are disclosed. A photoresist polymer represented by Formula 1 and a photoresist composition containing the same have excellent etching resistance, thermal resistance and adhesive property, and high affinity to an developing solution, thereby improving LER (line edge roughness). wherein X1, X2, R1, R2, m, n, a, b and c are as defined in the description.

Abstract: The present invention provides a method of manufacturing a member pattern having a patterned member on a substrate, the method including: a first exposure step of exposing a desired region of a negative type photosensitive material applied to the substrate to light from a first direction; a second exposure step of exposing the desired region of the negative type photosensitive material to light from a second direction opposite to the first direction; a development step of performing development after the exposure steps to form a precursor pattern of the member; and a step of baking the precursor pattern.

Abstract: A method for producing a unit having a three-dimensional surface patterning on a base layer. A photoresist is applied to a base layer and subjected to a masked exposure matched to a predetermined final surface patterning. Parts of the photoresist layer are removed by developing to provide an initial surface patterning, including photoresist sacrificial subregions. A coating which covers the initial surface patterning is then applied. Energy is then applied to the initial surface patterning to destabilize the sacrificial layer regions. The initial surface patterning is acted on by a high-pressure liquid jet at a predetermined treatment temperature such that at least part of the coating which covers the sacrificial layer regions are mechanically removed or at least broken open to produce the final surface patterning. The liquid has a negligible chemical reaction rate and/or physical dissolution rate with respect to materials of the unit and/or organic fluid-sealing means.

Abstract: A method of correcting a defective portion of an exposure window in a lithography mask, such as an EPL mask, includes a first step of irradiating a defective portion of the exposure window using a charge particle beam to perform correction processing, and a second step of irradiating another portion of the exposure window with the charged particle beam to eliminate attached matter therefrom, the attached matter consisting of particles ejected from the defective portion of the exposure window as a result of irradiation with the charged particle beam during the first step. The first step and the second step are sequentially repeated N times, wherein N is an integer of 2 or more, to thereby reduce the time needed for eliminating the attached matter.

Abstract: A scanning electron microscope which efficiently makes measurements for plural measurement items at a time and allows easy entry, confirmation and revision of auto measurement parameters. Parameters for creation of a line profile from an image captured by the scanning electron microscope are entered as auto measurement parameters (AMP) to be used as common conditions for all measurement items. Also, plural combinations of edge detection methods and measurement calculation methods are entered as auto measurement parameters to make measurements for plural items.

Abstract: The present invention relates to a photosensitive composition useful at wavelengths between 300 nm and 10 nm which comprises a polymer containing a substituted or unsubstituted higher adamantane.

Abstract: The chemically amplified resist includes a film-forming polymer, a photoacid generator, and a solvent. The film-forming polymer contains acid-labile groups which are eliminated under the action of an acid and liberate a group which brings about an increase in the solubility of the polymer in aqueous alkaline developers. The film-forming polymer has polymer building blocks derived from monomers which are at least monofluorinated and contain an anchor group for the attachment of an amplifying agent. As a result of the fluorination of the polymer building blocks, the transparency of the resist at an exposing wavelength of 157 nm is substantially increased, so that resist structures of increased layer thickness can be represented.

Abstract: A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.

Abstract: The present invention provides a highly reliable technology for manufacturing a substrate with protrusions. After filling an UV-curable transfer material into the grooves of an intaglio plate for transfer, the UV-curable transfer material is cured by irradiating UV rays under the conditions where it is exposed to an atmosphere that contains at least one of oxygen and ozone while a curing-inhibited portion is formed in an area of the UV-curable transfer material exposed to this atmosphere, and the UV-curable transfer material is transferred to the substrate to form the protrusions, while the curing-inhibited portion is made to adhere to the substrate.

Abstract: A process for forming a polymer template includes exposing a photoresist having polymer molecules to a light pattern and baking the photoresist to chemically react polymer molecules in portions of the photoresist that were exposed to light of the light pattern. The reacted polymer molecules have a different solubility in a solvent than chemically unreacted polymer molecules. The process also includes washing the baked photoresist with the solvent to produce a porous structure by selectively solvating one of the reacted polymer molecules and the unreacted polymer molecules. The porous structure can be used as template for forming porous structures of high refractive index materials.

Abstract: In a method for forming a planarized layer on a semiconductor device having concave and convex structures, a dielectric film is formed on a semiconductor substrate; a photoresist pattern is formed to have a thickness on a portion of the dielectric film other than a convex portion greater than h/n (h and n are real numbers of one or more) to remove the convex portion of the dielectric film by a depth of approximately h. The photoresist pattern is re-flowed to have a thickness below h/n at a portion from an edge of the convex portion to a slant portion of the dielectric film. The dielectric film is etched using an etchant having a selectivity of 1:n between the photoresist pattern and the dielectric film. An edge of the photoresist pattern is made thin by re-flowing thereby minimizing a pillar, hence allowing simple, fast, planarization of the dielectric film.

Abstract: A method for forming an ultra fine contact hole includes: forming a KrF photoresist pattern on a semiconductor substrate providing an insulation layer, the KrF photoresist pattern exposing a predetermined region for forming a contact hole on the insulation layer; forming a chemically swelling process (CSP) chemical material-containing layer being reactive to the KrF photoresist pattern on an entire surface of the semiconductor substrate; forming a chemical material-containing pattern encompassing the KrF photoresist pattern by reacting the chemical material-containing layer with the KrF photoresist pattern through a chemically swelling process to decrease a critical dimension of the contact hole; rinsing the semiconductor substrate; and increasing a thickness of a sidewall of the chemical material-containing pattern to a predetermined thickness by performing a resist flow process (RFP) that makes the chemical material-containing pattern flowed to decrease the critical dimension (CD) of the contact hole.

Abstract: In an embodiment, a trench is formed above a via from a photo resist (PR) trench pattern in a dielectric layer. The trench is defined by two sidewall portions and base portions. The base portions of the sidewalls are locally treated by a post treatment using the PR trench pattern as mask to enhance mechanical strength of portions of the dielectric layer underneath the base portions. Seed and barrier layers are deposited on the trench and the via. The trench and via are filled with a metal layer. In another embodiment, a trench is formed from a PR trench pattern in a dielectric layer. A pillar PR is deposited and etched to define a pillar opening having a pillar surface. The pillar opening is locally treated on the pillar surface by a post treatment to enhance mechanical strength of portion of the dielectric layer underneath the pillar surface.

Abstract: Novel silicon-containing polymers are obtained by copolymerizing a vinylsilane monomer with a compound having a low electron density unsaturated bond such as maleic anhydride, maleimide derivatives or tetrafluoroethylene. Using the polymers, chemical amplification positive resist compositions sensitive to high-energy radiation and having a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching are obtained.

Abstract: Novel silicon-containing polymers are provided comprising recurring units having a POSS pendant and units which improve alkali solubility under the action of an acid. Resist compositions comprising the polymers are sensitive to high-energy radiation and have a high sensitivity and resolution at a wavelength of up to 300 nm and improved resistance to oxygen plasma etching.

Abstract: The present invention relates to a paste composition, including a bonding agent charged with a metallic powder, to be used in a prototyping procedure, a procedure for obtaining metallic products from said composition, and a metallic product obtained from said procedure. The composition is characterized by the fact that it includes: a bonding agent comprised of at least one photopolymerizable resin, with a viscosity of less than 4000 mPa.s, measured at 25° C., a photoinitiator, in a concentration greater than 0.2% by mass with respect to the mass of the resin, and a metallic powder in a volumetric concentration greater than 40% with respect to the composition, with said composition having a minimum reactivity on the order of 5 mm3/s per watt of lighting power.

Abstract: A chemically amplified photo-resist includes a polymer containing acid-labile radicals attached to a polar group and also contains anchor groups that allow attachment of a consolidating agent. The polymer includes first repeating units containing siloxane groups. The photoresist on the one hand exhibits an enhanced transparency for short-wavelength radiation and on the other hand permits chemical consolidation of the structured resist. A process for producing structured resists is a also described.

Abstract: A method for manufacturing a direct stamper to be used for molding optical discs, includes forming a layer of a crosslinkable substance all over a surface of a base disc, subjecting the crosslinkable substance to a first crosslinking reaction, thereafter, forming a photoresist layer on the crosslinking substance, subsequently, subjecting the photoresist layer to exposure to a laser beam having been modulated by a signal to be recorded, and then to development, so that exposed portions of the photoresist are formed into bumps on the crosslinking substance, and thereafter, further subjecting the crosslinking substance and the photoresist bumps to a second crosslinking reaction.

Abstract: The present invention provides a method, article of manufacture and system for fabricating an article using photo-activatable building material. The method includes the steps of applying a layer of the photo-activatable building material to a preselected surface, scanning the layer using a plurality of light-emitting centers to photo-activate the layer of photo-activatable building material in accordance with a predetermined photo-initiation process to obtain polymerization of the building material, wherein scanning is accomplished at a predetermined distance using a predetermined light intensity, and repeating the steps of applying the layer, with each layer being applied to an immediately previous layer, and scanning the layer with the plurality of light-emitting centers to polymerize the building material until the article is fabricated.

Abstract: The present invention describes a method including providing a substrate; forming a photoresist on the substrate; performing a post-apply bake on the photoresist; exposing the photoresist to actinic radiation; performing a post-exposure bake on the photoresist; developing the photoresist; and performing electron exposure on the photoresist to reduce line edge roughness.

Abstract: A thin film to be milled is formed on a substrate 1, and thereafter, a polymethylglutarimide layer and a photoresist layer are coated. Then, the photoresist layer is exposed and developed via a given mask, to form a pre-resist pattern. Then, ashing treatment is performed for the pre-resist pattern to a narrowed resist pattern. Subsequently, the thin film to be milled is milled via the resist pattern to obtain a patterned thin film.

Abstract: Radiation sensitive compositions for use in producing a patterned image on a substrate comprise: a) a first photoacid generator compound which comprises one or more compounds of the structure (A); b) a second photoacid generator compound which comprises one or more compounds of the structure (B); c) a polymer component comprising an alkali soluble resin component whose alkali solubility is suppressed by the presence of acid sensitive moieties and whose alkali solubility is returned by treatment with an acid and, optionally, heat; wherein said polymer comprises one or more polymers comprising the monomer unit (C); ?and d) a solvent.

Abstract: A photo-patternable perfluorinated silane sol-gel material is presented that exhibits a high refractive index and propagation losses below 1 dB/cm at the telecommunication wavelengths. The sol-gels are produced with general formula [(CH2)n,R?—Si(O)2]x—[Si(O)4]y—[R?—Si(O)3]z—[R?(CH2)n—M(O)3]w—[R??(CH2)n—Si(O)3]v where O is oxygen, Si is silicon, M is a metal alkoxyde known to form bonds with organic compounds through oxygen donor ligands, and where , R? and R?? are photo cross-linkable groups, and where (CH2)n are alkyl spacers with n being an integer ?0. The sol-gels can be fabricated to produce complex waveguide structures directly onto silica-on-silicon substrates with low bending losses.

Abstract: A resist film is formed from a chemically amplified resist material containing a base polymer including at least one ester out of acrylate and methacrylate and an acid generator that generates an acid when irradiated with light. The resist film is selectively irradiated for pattern exposure with extreme UV of a wavelength of a 1 nm through 30 nm band, and is developed after the pattern exposure, so as to form a resist pattern from an unexposed portion of the resist film. The resist pattern is then annealed, so as to smooth roughness having been caused on the resist pattern.

Abstract: A method for exposing a blanket photoresist layer employs: (1) a first direct write exposure of the blanket photoresist layer to form therein an exposed peripheral sub-region of a desired exposed pattern; and (2) a second masked photoexposure of the blanket photoresist layer to form therein a masked photoexposed bulk sub-region of the desired exposed pattern which overlaps but does not extend beyond the exposed peripheral sub-region. The once masked photoexposed once direct write exposed blanket photoresist layer may be developed to form a patterned photoresist layer employed for forming a patterned opaque layer border within an opaque bordered attenuated phase shift mask.

Abstract: A permanent resist obtained by at least photoexposure and alkali development of a photosensitive resin composition, the permanent resist containing a metal carboxylate group, or a carboxyl group (a carboxyl anhydride group is also included among a carboxyl group according to the invention) and a metal carboxylate group, wherein an alkaline earth metal carboxylate group constitutes at least 30 mole percent of the total of a carboxyl group and a metal carboxylate group.

Abstract: A finely patterned silica type ceramic film suitable as an inter-layer dielectric is formed in a short time by applying, onto a substrate, a positive working radiation sensitive polysilazane composition comprising a modified poly(sil sesquiazane) having a number average molecular weight of 100 to 100,000 and containing a basic constituent unit represented by the general formula: —[SiR6(NR7)1.5]— and other constituent units represented by the general formula: —[SiR62NR7]— and/or —[SiR63(NR7)0.5]— (R6 and R7 independently represent a hydrogen atom, a C1-3 alkyl group or a substituted or unsubstituted phenyl group) in a ratio of 0.

Abstract: An amorphous carbon layer of an antireflective bi-layer hardmask is processed to increase its density prior to patterning of an underlying polysilicon layer using the bi-layer hardmask. The increased density of the layer increases its resistance to polysilicon etch chemistry, thus reducing the likelihood of patterning inaccuracies resulting from amorphous carbon depletion during polysilicon etch, and enabling the patterning of thicker polysilicon layers than can be reliably patterned without densification. The increased density also reduces stresses, thus reducing the likelihood of delamination. Densification may be performed by UV or e-beam irradiation after formation of an overlying protective layer. Densification may also be performed by annealing the amorphous carbon layer in situ prior to formation of the overlying protective layer. In the latter case, annealing reduces the amount of outgassing that occurs during formation of the protective layer, thus reducing the formation of pin holes.

Abstract: It has now been surprisingly found that by exposing a photoresist to flood electron beam exposure in combination with optical exposure, that the pullback on the upper region of lithographic images in resist can be virtually eliminated during electron beam processing. This unexpected result is due to the fact that the electron beam exposure and optional bake are carried out prior to development of the resist. This means that the resist shrinkage that is seen as a result of these steps is constrained laterally by the resist film itself. Thus, the resist is free to shrink vertically, and the resulting shrinkage provides a reduction in the line slimming and an improvement in the etch rate of the resist. This leads to the formation of a better resist image.

Abstract: The present invention relates to a polymerizable coating composition suitable for the manufacture of printing plates developable on-press. The coating composition comprises (i) a polymerizable compound and (ii) a polymeric binder comprising polyethylene oxide segments, wherein the polymeric binder is selected from the group consisting of at least one graft copolymer comprising a main chain polymer and polyethylene oxide side chains, a block copolymer having at least one polyethylene oxide block and at least one non-polyethylene oxide block, and a combination thereof. The invention is also directed to an imageable element comprising a substrate and the polymerizable coating composition.

Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.

Abstract: TIMD (tetraisopropyl methylene diphosphonate) as a light absorbance depressant to a light source of a wavelength of less than 200 nm, and a photoresist composition containing the same are disclosed. The disclosed chemically amplified photoresist composition containing TIMD is useful for a VUV (vacuum ultraviolet) photoresist composition due to its low light absorbance to a light source of a wavelength of 157 nm.

Abstract: A substrate processing apparatus for processing a substrate coated with a chemical amplification type resist and subjected to a light-exposure treatment comprises a substrate table on which is disposed a substrate, a heater for heating the substrate disposed on the substrate table, and an electric field forming mechanism for forming an electric field exerting force, which is directed toward the substrate, on the protons generated in the resist formed on the substrate disposed on the substrate table.

Abstract: A resist film is formed from a chemically amplified resist material including a base polymer having a protecting group released by a function of an acid, an acrylic compound and an acid generator that generates an acid when irradiated with light. The resist film is selectively irradiated with exposing light for pattern exposure, and is developed after the pattern exposure so as to form a resist pattern having a hole or groove opening. The size of the opening is reduced by irradiating the resist pattern with light with annealing.

Abstract: Disclosed is a method to build rounded forms on a substrate by means of a masking layer covering at least parts of a substrate by applying the masking layer in a predetermined thickness to the substrate, such that the layer fixedly adheres to the substrate, performing a photo step, developing the masking layer, contracting the masking layer when adhering to the substrate by an irreversible shrinking process with predefined process control parameters, performing the etching process with a shrunk masking layer and etching at least in part through the shrunk masking layer.

Abstract: A novel polymer is obtained by copolymerizing a (meth)acrylic acid derivative with a vinyl ether compound, an allyl ether compound and an oxygen-containing alicyclic olefin compound. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.

Abstract: A method for forming via openings or contact holes with improved aspect ratios by using a deep UV photoresist is described. In the method, after a deep UV photoresist layer is deposited on top of a thick oxide layer, the deep UV photoresist layer is pre-treated by a curing process with UV radiation for a time period of at least 1 min, and preferably between about 1 min and about 10 min at a temperature of at least 100° C., and preferably at least 160° C. The curing process stabilizes the structure of the deep UV photoresist material and thus reduces the formation of fluorocarbon polymers by the carbon component in the photoresist material and the fluorine component in the etchant gas, and subsequently, reduces the coating of such fluorocarbon polymers at the bottom of the via openings which would otherwise stop the etching process during via or contact formation.

Abstract: The invention relates to a method of manufacturing a stamper for producing optical disks, comprising the application of a photoresist to a stamper plate and the structuring of the applied photoresist film. The structuring comprises the successive exposure, development and heating of the photoresist film. The developed photoresist film is subjected to an additional exposure in the deep UV range prior to the final heat treatment. The invention also relates to a stamper and to an optical disk obtained using the stamper.