Plural Exposure Steps Patents (Class 430/394)
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Patent number: 11518096Abstract: A build plate for a three-dimensional printer includes: a rigid, optically transparent, gas-impermeable planar base having an upper surface and a lower surface; and a flexible, optically transparent, gas-permeable sheet having an upper and lower surface, the sheet upper surface comprising a build surface for forming a three-dimensional object, the sheet lower surface positioned on the base upper surface. The build plate includes a gas flow enhancing feature configured to increase gas flow to the build surface.Type: GrantFiled: January 15, 2021Date of Patent: December 6, 2022Assignee: Carbon, Inc.Inventors: David Moore, John R. Tumbleston, Edward T. Samulski, Alexander Ermoshkin, Jason P. Rolland, Ariel M. Herrmann, Bob E. Feller
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Patent number: 11519373Abstract: A method for producing an injector which is designed in particular to inject fuel into an induction pipe or directly into a combustion chamber of an internal combustion engine. The method includes providing an injector base element, providing a rod that is insertible into a through hole of the injector base element, producing a negative matrix of a spray orifice element on an axial end of the rod, inserting the rod into the through hole of the injector base element, positioning the negative matrix situated on the rod relative to the injector base element, producing the spray orifice element having at least one spray orifice by applying a galvanization layer on a downstream end, in the injection direction, of the injector base element and on the negative matrix, and removing the rod and the negative matrix.Type: GrantFiled: February 28, 2019Date of Patent: December 6, 2022Assignee: Robert Bosch GmbHInventors: Thomas Stach, James Doetsch, Jan Tremel, Markus Feigl, Peter Rueck, Roman Poltoratski, Timo Dehm
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Patent number: 11491711Abstract: This invention relates to the field of 3D printing used to make a 3D object where a 3D printed object is formed using electromagnetic radiation emitted from a visual display screen or emissive pixel array screen illuminated by radiation sources with effectively non-overlapping wavelength emission spectra with the effect of creating two different polymerised properties in the object.Type: GrantFiled: February 11, 2020Date of Patent: November 8, 2022Assignee: PhotoCentriC LimitedInventors: Paul Holt, Sarah Karmel
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Patent number: 11464115Abstract: The present invention relates to a printing method comprising a step of printing a pattern on a substrate, preferably by ink jet printing, followed by a gold plating step by means of contact between the pre-printed pattern to be gold plated and a gold plating deposition device, such as a preferably conductive metal sheet, e.g. a multilayer film comprising a preferably conductive metal sheet.Type: GrantFiled: March 8, 2018Date of Patent: October 4, 2022Assignees: MGI DIGITAL TECHNOLOGY, INKJET ENGINE TECHNOLOGYInventors: Edmond Abergel, Louis Gautier Le Boulch, Clement Beges
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Patent number: 11444107Abstract: A manufacturing method of a display panel includes providing a substrate having a first surface and a second surface opposite to the first surface; forming a high-shielding position layer on the first surface, wherein the light-shielding positioning layer has at least one first alignment pattern; forming a transparent material layer on the second surface; forming a photoresist layer on the transparent material layer; performing an exposure process, such that a light beam passes through the at least one first alignment pattern to penetrate through the substrate and the transparent material layer to the photoresist layer; performing a developing process to pattern the photoresist layer and form a patterned photoresist layer; and performing an etching process to pattern the transparent positioning layer having at least one second alignment pattern. In a direction perpendicular to the substrate, at least one first alignment pattern overlaps with at least one second alignment pattern.Type: GrantFiled: September 30, 2020Date of Patent: September 13, 2022Assignee: AU Optronics CorporationInventors: Peng-Bo Xi, Chun-Cheng Cheng
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Patent number: 11443661Abstract: A flexible display substrate and a method for manufacturing the same are provided. The method includes: forming a first insulating layer on a flexible base substrate; forming an etching barrier layer on a side of the first insulating layer away from the flexible base substrate; forming a second insulating layer covering the etching barrier layer on the side of the first insulating layer away from the flexible base substrate; and forming a first opening in the first insulating layer and a second opening in the second insulating layer through one patterning process, so that an orthographic projection of the first opening on the flexible base substrate falls within an orthographic projection of the second opening on the flexible base substrate, so as to form a step portion at a connection position where the first opening is connected to the second opening.Type: GrantFiled: April 10, 2020Date of Patent: September 13, 2022Assignees: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD.Inventors: Liang Song, Yufei Ji, Pengyu Liao, Jiahao Xu, Hao Cheng, Wuyang Zhao, Long Jiang, Fei Ou, Jun Peng
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Patent number: 11413856Abstract: A method and apparatus for making a three-dimensional object by solidifying a solidifiable material are shown and described. A photohardening inhibitor is admitted into a surface of a photohardenable material to create a “dead zone” where little or no solidification occurs. The dead zone prevents the exposed surface of the photohardenable material from solidifying in contact with a container bottom or film. As the solidified object areas get larger and the build platform speed increases, the dead zone increases which can cause the formation of channels in the resulting objects and delamination. A number of techniques including continuous/discontinuous mode switching, multiple illuminations of portions of the same layer, and the use of gray scaling are disclosed for regulating the size of the dead zone.Type: GrantFiled: July 3, 2020Date of Patent: August 16, 2022Assignee: Global Filtration SystemsInventors: Ali El-Siblani, Mohamad Janbain
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Patent number: 11373679Abstract: A recording head includes a near-field transducer proximate a media-facing surface of the recording head and a waveguide that overlaps and delivers light to the near-field transducer. The recording head includes subwavelength-sized focusing mirror comprising first and second reflectors disposed on cross track sides of the near-field transducer. Each of the first and second reflectors is spaced apart from the media-facing surface by a distance, D, measured along an axis normal to the media-facing surface.Type: GrantFiled: August 19, 2021Date of Patent: June 28, 2022Assignee: SEAGATE TECHNOLOGY LLCInventors: Ruoxi Yang, YongJun Zhao, Nan Zhou, Weibin Chen, Huaqing Yin, Michael Allen Seigler
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Patent number: 11373899Abstract: According to the present embodiment, the pattern generation device includes a misalignment value calculation unit configured to acquire a layout information, calculate a layout function from the layout information, and calculate a misalignment value by a convolution of the layout function and an integral kernel having a predetermined parameter, and a pattern correction unit configured to correct a pattern to generate a modified layout information using a calculated result by the misalignment value calculation unit, and output the modified layout information.Type: GrantFiled: March 4, 2020Date of Patent: June 28, 2022Assignee: Kioxia CorporationInventors: Taiki Kimura, Tetsuaki Matsunawa
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Patent number: 11353845Abstract: A model-adaptive multi-source large-scale mask projection 3D printing system configured to conduct the following steps: projecting pure-color images of first and second colors having identical attributes, capturing an image of an overlapping portion and calculating height and width information of the overlapping portion; splitting a pre-processed slice and respectively recording width and height information of two slices resulting from the splitting and generating two gray scale images having identical attributes thereto; counting power values of identical positions of slices in different gray scale values, performing a further calculation to obtain a projection mapping function, using the projection mapping function as a basis for performing optimization on gray scale interpolation of the generated images; and fusing the processed gray scale images and the originally split two slices to obtain a mask projection 3D printing slice having a uniform shaping brightness, and forming a final product.Type: GrantFiled: August 25, 2020Date of Patent: June 7, 2022Assignee: Beijing University of TechnologyInventors: Lifang Wu, Lidong Zhao, Zechao Liu, Jiankang Qiu, Xiaohua Guo, Meng Jian, Ziming Zhang
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Patent number: 11322398Abstract: A process for making an interconnect of a group III-V semiconductor device includes the steps of applying a positive photoresist layer and an image-reversible photoresist layer, subjecting the image-reversible photoresist and positive photoresist layers to patternwise exposure, subjecting the image-reversible photoresist layer to image reversal bake, subjecting the image-reversible photoresist and positive photoresist layers to flood exposure, subjecting the image-reversible photoresist and positive photoresist layers to development, depositing a diffusion barrier layer, depositing a copper layer, and removing the image-reversible photoresist and positive photoresist layers.Type: GrantFiled: December 3, 2019Date of Patent: May 3, 2022Assignee: NATIONAL CHIAO TUNG UNIVERSITYInventors: Edward-Yi Chang, Yueh-Chin Lin, Ming-Yen Tsai, Po-Sheng Chang
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Patent number: 11079338Abstract: In detecting the structure of a lithography mask, a portion of the lithography mask is firstly illuminated with illumination light of an at least partially coherent light source in the at least one preferred illumination direction. A diffraction image of the illuminated portion is then recorded by spatially resolved detection of a diffraction intensity of the illumination light diffracted from the illuminated portion in a detection plane. The steps of “illuminating” and “recording the diffraction image” are then carried out for further portions of the lithography mask. Between at least two portions of the lithography mask that are thereby detected, there is in each case an overlap region whose surface extent measures at least 5% or more of the smaller of the two portions of the lithography mask. The repetition takes place until the detected portions of the lithography mask completely cover a region of the lithography mask to be detected.Type: GrantFiled: June 25, 2019Date of Patent: August 3, 2021Assignee: Carl Zeiss SMT GmbHInventors: Ulrich Matejka, Thomas Scheruebl, Markus Koch, Christoph Husemann, Lars Stoppe, Beat Marco Mout
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Patent number: 11067895Abstract: After printing common features from a primary mask into a photoresist layer located over a substrate, a functional feature which is suitable for changing functionalities or the configurations of the common features according to a chip design is selected from a library of additional functional features in a secondary mask. The selected functional feature from the secondary mask is printed into the photoresist layer to modify the common features that already exist in the photoresist layer. The selection and printing of functional feature processes can be repeated until a final image corresponding to the chip design is obtained in the photoresist layer.Type: GrantFiled: January 13, 2017Date of Patent: July 20, 2021Assignee: International Business Machines CorporationInventors: John B. Deforge, Bassem M. Hamieh, Terence B. Hook, Theresa A. Newton, Kirk D. Peterson
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Patent number: 10884336Abstract: A method for fabricating a semiconductor device, includes dividing a pattern region of a desired pattern that is to be formed on a semiconductor substrate into a plurality of sub-regions; calculating combination condition including a shape of illumination light for transferring and a mask pattern obtained by correcting a partial pattern in the sub-region of the desired pattern formed on a mask used during transferring for each of the plurality of sub-regions, to make a dimension error of the partial pattern of each of the plurality of sub-regions smaller when transferred to the semiconductor substrate; and forming the desired pattern by making multiple exposures on the semiconductor substrate in such a way that the partial patterns of the sub-regions divided are sequentially transferred by transferring a pattern to the semiconductor substrate using the combination conditions calculated for each of the sub-regions.Type: GrantFiled: November 18, 2016Date of Patent: January 5, 2021Assignee: NuFlare Technology, Inc.Inventor: Takayuki Abe
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Patent number: 10684552Abstract: Various methods are disclosed herein for reducing (or eliminating) printability of mask defects during lithography processes. An exemplary method includes performing a first lithography exposing process and a second lithography exposing process using a mask to respectively image a first set of polygons oriented substantially along a first direction and a second set of polygons oriented substantially along a second direction on a target. During the first lithography exposing process, a phase distribution of light diffracted from the mask is dynamically modulated to defocus any mask defect oriented at least partially along both the first direction and a third direction that is different than the first direction. During the second lithography exposing process, the phase distribution of light diffracted from the mask is dynamically modulated to defocus any mask defect oriented at least partially along both the second direction and a fourth direction that is different than the third direction.Type: GrantFiled: May 4, 2018Date of Patent: June 16, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yen-Cheng Lu, Chia-Hao Hsu, Shinn-Sheng Yu, Chia-Chen Chen, Jeng-Horng Chen, Anthony Yen
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Patent number: 10551743Abstract: A method for critical dimension control in which a substrate is received having an underlying layer and a radiation-sensitive material layer thereon. The radiation-sensitive material is exposed through a patterned mask to a first wavelength of light in the UV spectrum, and developed a first time. The radiation-sensitive material is flood exposed to a second wavelength of light different from the first wavelength of light and developed a second time to form a pattern.Type: GrantFiled: May 12, 2017Date of Patent: February 4, 2020Assignee: Tokyo Electron LimitedInventors: Michael A. Carcasi, Anton J. deVilliers
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Patent number: 10409152Abstract: Techniques are disclosed for realizing a two-dimensional target lithography feature/pattern by decomposing (splitting) it into multiple unidirectional target features that, when aggregated, substantially (e.g., fully) represent the original target feature without leaving an unrepresented remainder (e.g., a whole-number quantity of unidirectional target features). The unidirectional target features may be arbitrarily grouped such that, within a grouping, all unidirectional target features share a common target width value. Where multiple such groupings are provided, individual groupings may or may not have the same common target width value. In some cases, a series of reticles is provided, each reticle having a mask pattern correlating to a grouping of unidirectional target features. Exposure of a photoresist material via the aggregated series of reticles substantially (e.g., fully) produces the original target feature/pattern.Type: GrantFiled: January 30, 2017Date of Patent: September 10, 2019Assignee: INTEL CORPORATIONInventors: Charles H. Wallace, Hossam A. Abdallah, Elliot N. Tan, Swaminathan Sivakumar, Oleg Golonzka, Robert M. Bigwood
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Patent number: 10208104Abstract: The present invention provides novel methods and compositions useful for a fast and efficient chemical conjugation method of making hetero-arm polymers based on thiourea-catechol coupling. This novel conjugation method are useful in a wide variety of applications relating to the modification, ligation, and conjugation of large or small molecules to each other as well as to solid surface, including the making of adhesive materials such as hydrogels.Type: GrantFiled: November 28, 2016Date of Patent: February 19, 2019Assignee: The Chinese University of Hong KongInventors: Liming Bian, Yang Xu, Kongchang Wei, Pengchao Zhao
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Patent number: 9746774Abstract: A method for mitigating shot noise in extreme ultraviolet (EUV) lithography and patterning of photo-sensitized chemically-amplified resist (PS-CAR) is described. The method includes a first EUV patterned exposure to generate a photosensitizer and a second flood exposure at a wavelength different than the wavelength of the first EUV patterned exposure, to generate acid in regions exposed during the first EUV patterned exposure, wherein the photosensitizer acts to amplify acid generation and improve contrast. The resist may be exposed to heat, liquid solvent, solvent atmosphere, or a vacuum to mitigate the effects of EUV shot noise on photosensitizer concentration which may accrue during the first EUV patterned exposure.Type: GrantFiled: February 23, 2015Date of Patent: August 29, 2017Assignee: Tokyo Electron LimitedInventors: Michael A. Carcasi, Mark H. Somervell
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Patent number: 9698070Abstract: In various embodiments, an arrangement is provided. The arrangement may include a plurality of chips; a chip carrier carrying the plurality of chips, the chip carrier including a chip carrier notch; and encapsulation material encapsulating the chip carrier and filling the chip carrier notch; wherein the outer circumference of the encapsulation material is free from a recess.Type: GrantFiled: April 11, 2013Date of Patent: July 4, 2017Assignee: Infineon Technologies AGInventors: Michael Ledutke, Edward Fuergut
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Patent number: 9465287Abstract: Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.Type: GrantFiled: October 30, 2015Date of Patent: October 11, 2016Assignee: Micron Technology, Inc.Inventors: Scott L. Light, Yuan He, Michael A. Many, Michael Hyatt
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Patent number: 9406499Abstract: A semiconductor structure includes a wafer including a first surface and a periphery, a plurality of protrusions protruded from the first surface and a plurality of recesses spaced from each other by the plurality of protrusions, and each of the plurality of recesses is extended from the periphery of the wafer and is elongated across the first surface of the wafer.Type: GrantFiled: February 12, 2014Date of Patent: August 2, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chen-Chun Chen, Chiu-Jung Chen, Fu-Tsun Tsai, Shiu-Ko Jangjian, Chi-Cherng Jeng, Hsin-Chi Chen
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Patent number: 9354510Abstract: An extreme ultraviolet (EUV) mask can be used in lithography, such as is used in the fabrication of a semiconductor wafer. The EUV mask includes a low thermal expansion material (LTEM) substrate and a reflective multilayer (ML) disposed thereon. A capping layer is disposed on the reflective ML and a patterned absorption layer disposed on the capping layer. The pattern includes an antireflection (ARC) type pattern.Type: GrantFiled: April 4, 2014Date of Patent: May 31, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Fang Yu, Ting-Hao Hsu, Sheng-Chi Chin
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Patent number: 9310698Abstract: A lithographic exposure process is performed on a substrate using a scanner. The scanner comprises several subsystems. There are errors in the overlay arising from the subsystems during the exposure. The overlay errors are measured using a scatterometer to obtain overlay measurements. Modeling is performed to separately determine from the overlay measurements different subsets of estimated model parameters, for example field distortion model parameters, scan/step direction model parameters and position/deformation model parameters. Each subset is related to overlay errors arising from a corresponding specific subsystem of the lithographic apparatus. Finally, the exposure is controlled in the scanner by controlling a specific subsystem of the scanner using its corresponding subset of estimated model parameters. This results in a product wafer being exposed with a well controlled overlay.Type: GrantFiled: January 24, 2011Date of Patent: April 12, 2016Assignee: ASML Netherlands B.V.Inventors: Boris Menchtchikov, Alexander Viktorovych Padiy
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Patent number: 9278504Abstract: The present invention relates to a decorative film to be attached to an outside surface of a home appliance and a method for manufacturing the same, and more particularly, to a decorative film to be attached to an outside surface of a home appliance which is to be attached to an outside of a home appliance, such as a refrigerator, an air conditioner or a washing machine, replacing stainless steel panel etched to form a pattern to have metal feeling; and a method for manufacturing the same. The decorative film to be attached to an outside surface of a home appliance comprises a base layer, a pattern layer on a back side of the base layer, the pattern layer having a micro pattern, a metal layer on a back side of the pattern layer, and a protective layer of synthetic resin attached to a back side of the metal layer for protecting the metal layer.Type: GrantFiled: August 17, 2010Date of Patent: March 8, 2016Assignee: LG ELECTRONICS INC.Inventors: Hyun Woo Jun, Hyun Gi Jung, Min Ju Son
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Patent number: 9235119Abstract: A method that forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer comprising at least one acid labile group, a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and of generating a second amount of acid upon exposure to a second dose of radiation, and a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose of radiation and of generating a second amount of base upon exposure to the second dose of radiation. The photosensitive acid generator includes (trifluoro-methylsulfonyloxy)-bicyclo[2.2.1]hept-5-ene-2,3-dicarboximide (MDT), N-hydroxy-naphthalimide dodecane sulfonate (DDSN), or a combination thereof. The photosensitive base generator includes a quaternary ammonium salt.Type: GrantFiled: August 12, 2014Date of Patent: January 12, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Kuang-Jung Chen, Wu-Song Huang, Ranee Wai-Ling Kwong, Sen Liu, Pushkara R. Varanasi
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Patent number: 9217927Abstract: Provided is a method for fabricating a microstructure. The method includes disposing an X-ray mask on photosensitive material and exposing the photosensitive material by radiating X-rays to the photosensitive material, etching the exposed photosensitive material, forming a mold having a micro-pattern by filing the etched photosensitive material with metal, forming a mold module by combining a plurality of molds, and forming a microstructure using the mold module.Type: GrantFiled: November 2, 2009Date of Patent: December 22, 2015Assignee: POSTECH ACADEMY-INDUSTRY FOUNDATIONInventors: Bong-Kee Lee, Dong Sung Kim, Tai-Hun Kwon, Young Ok Lee
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Patent number: 9122176Abstract: A method for fabricating a semiconductor device, includes dividing a pattern region of a desired pattern that is to be formed on a semiconductor substrate into a plurality of sub-regions; calculating combination condition including a shape of illumination light for transferring and a mask pattern obtained by correcting a partial pattern in the sub-region of the desired pattern formed on a mask used during transferring for each of the plurality of sub-regions, to make a dimension error of the partial pattern of each of the plurality of sub-regions smaller when transferred to the semiconductor substrate; and forming the desired pattern by making multiple exposures on the semiconductor substrate in such a way that the partial patterns of the sub-regions divided are sequentially transferred by transferring a pattern to the semiconductor substrate using the combination conditions calculated for each of the sub-regions.Type: GrantFiled: March 27, 2012Date of Patent: September 1, 2015Assignee: NuFlare Technology, Inc.Inventor: Takayuki Abe
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Patent number: 9104833Abstract: A mask set for double exposure process and method of using said mask set. The mask set is provided with a first mask pattern having a first base and a plurality of first teeth and protruding portions, and a second mask pattern having a second base and a plurality of second teeth, wherein the second base may at least partially overlap the first base such that each of the protruding portions at least partially overlaps one of the second teeth.Type: GrantFiled: May 26, 2014Date of Patent: August 11, 2015Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Fang Kuo, Ming-Jui Chen, Ting-Cheng Tseng, Cheng-Te Wang
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Patent number: 9017904Abstract: A method of providing a photolithography pattern can be provided by identifying at least one weak feature from among a plurality of features included in a photolithography pattern based on a feature parameter that is compared to a predetermined identification threshold value for the feature parameter. A first region of the weak feature can be classified as a first dosage region and a second region of the weak feature can be classified as a second dosage region. Related methods and apparatus are also disclosed.Type: GrantFiled: July 25, 2013Date of Patent: April 28, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jin Choi, Heung-Suk Oh, Sin-jeung Park, Rae-won Yi
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Patent number: 9005854Abstract: A conductive pattern is formed using a reactive polymer comprising pendant tertiary alkyl ester groups, a compound that provides an acid upon exposure to radiation, and a crosslinking agent. A polymeric layer is patternwise exposed to form first exposed regions with a polymer comprising carboxylic acid groups that are contacted with electroless seed metal ions, and then contacted with a halide to form corresponding electroless seed metal halide. Another exposure converts electroless seed metal halide to electroless seed metal nuclei and forms second exposed regions. A reducing agent is used to develop the electroless seed metal nuclei in the second exposed regions, or to develop the electroless seed metal halide in the first exposed regions. Fixing is used to remove any remaining electroless seed metal halide. The electroless seed metal nuclei are then electrolessly plated in various exposed regions.Type: GrantFiled: November 5, 2013Date of Patent: April 14, 2015Assignee: Eastman Kodak CompanyInventors: Mark Edward Irving, Thomas B. Brust
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Patent number: 9005875Abstract: A method of fabricating a substrate including coating a first resist onto a hardmask, exposing regions of the first resist to electromagnetic radiation at a dose of 10.0 mJ/cm2 or greater and removing a portion of said the and forming guiding features. The method also includes etching the hardmask to form isolating features in the hardmask, applying a second resist within the isolating features forming regions of the second resist in the hardmask, and exposing regions of the second resist to electromagnetic radiation having a dose of less than 10.0 mJ/cm2 and forming elements.Type: GrantFiled: March 15, 2013Date of Patent: April 14, 2015Assignee: Intel CorporationInventors: Robert L. Bristol, Paul A. Nyhus, Charles H. Wallace
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Patent number: 8993217Abstract: Innovative techniques are disclosed for fabricating microelectronic devices using an alternating phase shift mask. Some embodiments of the invention encompass a double exposure technique that utilize high resolution line patterning such that two opaque lines intersect at an angle. After development, substantially circular images may be formed. In certain embodiments, high resolution disk imaging as small as 60 nm is possible.Type: GrantFiled: May 30, 2013Date of Patent: March 31, 2015Assignee: Western Digital (Fremont), LLCInventors: Ling Wang, Dujiang Wan, Miao Wang, Hai Sun
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Patent number: 8993224Abstract: One illustrative method disclosed herein involves identifying an overall target pattern comprised of at least one hole-type feature, decomposing the overall target pattern into at least a first sub-target pattern and a second sub-target pattern, wherein the first sub-target pattern and the second sub-target pattern each comprise at least one common hole-type feature, generating a first set of mask data information corresponding to the first sub-target pattern, and generating a second set of mask data information corresponding to the second sub-target pattern.Type: GrantFiled: May 23, 2014Date of Patent: March 31, 2015Assignee: GLOBALFOUNDRIES Inc.Inventors: Yuyang Sun, Norman S. Chen, Jian Liu
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Patent number: 8986554Abstract: A method of forming patterns includes forming a photoresist film on a substrate. The photoresist film is exposed with a first dose of light to form a first area and a second area in the photoresist film. A first hole and a second hole are formed by removing the first area and the second area with a first developer. The photoresist film is re-exposed with a second dose of the light to form a third area in the photoresist film between the first hole and the second hole. A third hole is formed between the first hole and the second hole by removing the third area with a second developer.Type: GrantFiled: December 19, 2012Date of Patent: March 24, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Eun-sung Kim, Kyoung-seon Kim, Jae-woo Nam, Chul-ho Shin, Shi-young Yi
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Patent number: 8980540Abstract: A solid-state image sensor is manufactured through a plurality of photolithography processes. The plurality of photolithography processes includes at least one first lithography process including a dividing exposure step of exposing a substrate using a plurality of photomasks, and at least one second lithography process including a non-dividing exposure step of exposing the substrate using one photomask. The at least one first lithography process includes a process for forming a resist pattern to define active regions on the substrate, and a process for forming a resist pattern to define charge accumulation region.Type: GrantFiled: February 21, 2013Date of Patent: March 17, 2015Assignee: Canon Kabushiki KaishaInventor: Hideomi Kumano
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Patent number: 8974683Abstract: A method of reducing roughness in an opening in a surface of a resist material disposed on a substrate, comprises generating a plasma having a plasma sheath and ions therein. The method also includes modifying a shape of a boundary defined between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the boundary facing the resist material is not parallel to a plane defined by the surface of the substrate. The method also includes providing a first exposure of ions while the substrate is in a first position, the first exposure comprising ions accelerated across the boundary having the modified shape toward the resist material over an angular range with respect to the surface of the substrate.Type: GrantFiled: September 9, 2011Date of Patent: March 10, 2015Inventors: Ludovic Godet, Patrick M. Martin, Joseph C. Olson, Andrew J. Hornak
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Patent number: 8956791Abstract: According to one embodiment, an exposure tolerance estimation method is disclosed. The method can include setting a plurality of regions along a first surface of a substrate. The method can form a plurality of patterns for estimation by performing exposure on each of the regions using at least three levels of exposure condition using an exposure mask. The method can measure dimensions of the patterns for estimation and find relationships between the exposure condition and the dimensions. The method can select a first region from the regions. In the first region, a first dimension of a first pattern for estimation formed by exposure using a first exposure condition of an intermediate level out of the at least three levels falls within a previously set range. In addition, the method can calculate an exposure tolerance from a relationship between the first exposure condition and the first dimension.Type: GrantFiled: September 16, 2013Date of Patent: February 17, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Osamu Yamane, Kazuyuki Masukawa, Yasunobu Kai
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Patent number: 8945811Abstract: A system and method for forming encoded microparticles is described. One embodiment includes an encoded microparticle, the microparticle comprising a plurality of segments aligned along an axis, wherein the plurality of segments define a code for the microparticle; and an outer cuboid encapsulating the plurality of segments, wherein the plurality of segments are detectable through the outer cuboid.Type: GrantFiled: February 6, 2013Date of Patent: February 3, 2015Assignee: Affymetrix, Inc.Inventor: Randall J. True
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Patent number: 8945797Abstract: A mask, a pattern disposing method thereof and an exposing method thereof are provided. A plurality of geometric patterns are arranged on the mask along a plurality of columns. The arrangement of the patterns arranged along odd columns is similar to that of the patterns arranged along even columns. Two odd columns or two even columns are selected to be a first edge column and a second edge column respectively. At each corresponding position of the first edge column and the second edge column, only one of the first edge column and the second edge column is selected to be disposed one geometric pattern.Type: GrantFiled: January 16, 2013Date of Patent: February 3, 2015Assignee: Macronix International Co., Ltd.Inventors: Shih-Rung Wu, Shao-Wei Hsieh
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Patent number: 8945800Abstract: In a multiple patterning techniques, where two or more exposures are used to form a single layer of a device, the splitting of features in a single layer between the multiple exposures is carried out additionally with reference to features of another associated layer and the splitting of that layer into two or more sets of features for separate exposure. The multiple exposure process can be a process involving repeated litho-etch steps desirably, the alignment scheme utilized during exposure of the split layers is optimized with reference to the splitting approach.Type: GrantFiled: August 12, 2013Date of Patent: February 3, 2015Assignee: ASML Netherlands B.V.Inventors: Tsann-Bim Chiou, Mircea Dusa, Alek Chi-Heng Chen
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Patent number: 8932785Abstract: An EUV mask set and method of manufacturing is disclosed. In one embodiment, a set of EUV mask blanks is inspected to obtain information about defects in each of the EUV mask blanks. From the obtained information, a set of complementary functional portions is determined, wherein each functional portion is assigned to one of the EUV mask blanks and does not contain any of the defects. The functional portions of the EUV mask blanks of the EUV mask blank set complement one another to form a virtual image area corresponding in size to image areas of the EUV mask blanks. A predefined mask pattern is provided on the EUV mask blanks. Information identifying position and shape of the functional portions is used to control an illumination process for imaging the predefined mask pattern onto a target.Type: GrantFiled: October 16, 2012Date of Patent: January 13, 2015Assignee: Advanced Mask Technology Center GmbH & Co. KGInventor: Clemens Utzny
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Patent number: 8927198Abstract: A two-dimensional dense array of contact holes can be printed on a negative photoresist employing a combination of a quadrupole illumination lens and a lithographic mask including a criss-cross pattern of opaque lines. The openings in the quadrupole illumination lens are aligned along the perpendicular directions of the opaque lines. Discrete contact holes can be printed on a negative photoresist employing a combination of a quadrupole illumination lens and a lithographic mask including a criss-cross pattern of opaque subresolution assist features and discrete opaque cross patterns. Alternately, a two-dimensional array of contact holes can be printed on a negative photoresist employing a quadrupole illumination lens and a checkerboard pattern of openings. The openings in the quadrupole illumination lens are in diagonal directions.Type: GrantFiled: January 15, 2013Date of Patent: January 6, 2015Assignee: International Business Machines CorporationInventors: Martin Burkhardt, Yongan Xu
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Patent number: 8927200Abstract: A double patterning method includes providing a first resist film on a substrate using a first photoresist composition. The first resist film is exposed. The exposed first resist film is developed using a first developer to form a first resist pattern. A second resist film is provided in at least space areas of the first resist pattern using a second photoresist composition. The second resist film is exposed. The exposed second resist film is developed using a second developer that includes an organic solvent to form a second resist pattern. The first resist pattern is insoluble or scarcely soluble in the second developer.Type: GrantFiled: October 22, 2013Date of Patent: January 6, 2015Assignee: JSR CorporationInventors: Kanako Meya, Takeo Shioya, Motoyuki Shima
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Patent number: 8911920Abstract: A method for fabricating integrated circuits includes fabricating an EUV mask by providing a photomask having a border region. A photoresist is formed over the photomask and has a border region overlying the border region of the photomask. The method exposes an inner portion and an outer portion of the photoresist border region. The method removes the inner portion and the outer portion to expose the border region of the photomask. The border region of the photomask is etched using the photoresist as a mask to form the EUV mask with a non-reflective border. The photoresist is removed from the EUV mask. The method includes forming another photoresist over a partially-fabricated integrated circuit layer and patterning the photoresist by exposure to EUV light reflected from the EUV mask to expose portions of the partially-fabricated integrated circuit layer. Portions of the partially-fabricated integrated circuit layer and the photoresist are removed.Type: GrantFiled: March 15, 2013Date of Patent: December 16, 2014Assignee: GlobalFoundries, Inc.Inventors: Sudharshanan Raghunathan, Pawitter Mangat, Hui Peng Koh
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Patent number: 8900776Abstract: An embodiment of the disclosed technology provides a mask plate for photolithography process comprising a first pattern region, a second pattern region having a different exposure level from that of the first pattern region, and a redundant pattern provided between the first pattern region and the second pattern region, wherein the redundant pattern is configured for forming a redundant photoresist pattern so as to prevent developer diffusion at different concentrations across the photoresist redundant pattern.Type: GrantFiled: January 11, 2012Date of Patent: December 2, 2014Assignee: Boe Technology Group Co., Ltd.Inventors: Guanbao Hui, Seungjin Choi, Feng Zhang, Jianshe Xue
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Patent number: 8895211Abstract: A mask is disclosed which includes a plurality of first phase shift regions disposed on a first side of the mask, and a plurality of second phase shift regions disposed on a second side of the mask. The first phase shift regions and second phase shift regions may be alternating phase shift regions in which phase shift of the first phase shift regions is out of phase, for instance by 180 degrees, from phase shift of the second phase shift regions. A method for forming the mask, and a semiconductor device fabrication method using the mask is also disclosed.Type: GrantFiled: December 11, 2012Date of Patent: November 25, 2014Assignee: GLOBALFOUNDRIES, Inc.Inventors: Guoxiang Ning, Chunyu Wong, Paul Ackmann, Sarasvathi Thangaraju
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Patent number: 8889337Abstract: Such a film forming method is provided that can prevent peeling of surface films including a resist film from a substrate during immersion exposure. The film forming method includes the steps of forming surface films including a resist film and a protective film covering the resist film over a surface of a wafer, and forming an edge cap film by supplying an edge cap film material to at least a boundary portion including a periphery of the wafer and peripheries of the surface films such as the protective film.Type: GrantFiled: November 2, 2007Date of Patent: November 18, 2014Assignee: Tokyo Electron LimitedInventors: Hitoshi Kosugi, Taro Yamamoto, Yoshiaki Yamada, Yasuhito Saiga
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Patent number: 8883393Abstract: The invention relates to an imaging element and a method of using the imaging element to form a recording element. The imaging element includes a composition sensitive to actinic radiation at a first wavelength and a photoluminescent tag that is responsive to radiation at a second wavelength different from the first wavelength. The photoluminescent tag can be used to authenticate the identity of the element, provide information about the element, and/or to establish one or more conditions in a device used to prepare the recording element from the imaging element.Type: GrantFiled: December 9, 2009Date of Patent: November 11, 2014Assignee: E I du Pont de Nemours and CompanyInventor: Anandkumar R. Kannurpatti
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Patent number: RE49180Abstract: A method of forming a three-dimensional object is carried out by: providing a carrier and a pool of immiscible liquid, the pool having a liquid build surface, the carrier and the liquid build surface defining a build region therebetween; filling the build region with a polymerizable liquid, wherein the immiscible liquid is immiscible with the polymerizable liquid (in some embodiments wherein the immiscible liquid has a density greater than the polymerizable liquid); irradiating the build region through at least a portion of the pool of immiscible liquid to form a solid polymer from the polymerizable liquid and advancing the carrier away from the liquid build surface to form the three-dimensional object comprised of the solid polymer from the polymerizable liquid.Type: GrantFiled: November 6, 2019Date of Patent: August 23, 2022Assignee: Carbon, Inc.Inventors: Lloyd M. Robeson, Edward T. Samulski, Alexander Ermoshkin, Joseph M. DeSimone