Abstract: New routes involving multi-step reversible photo-chemical reactions using two-step techniques to provide non-linear resist for lithography are described in this disclosure. They may provide exposure quadratically dependant on the intensity of the light. Several specific examples, including but not limited to using nanocrystals, are also described. Combined with double patterning, these approaches may create sub-diffraction limit feature density.

Abstract: A method of manufacturing a semiconductor device comprising forming an active region in a device substrate using a first phase shift mask (PSM) having a first patterned light shielding layer formed thereon, forming a polysilicon feature on the device substrate over the active region using a second PSM having a second patterned light shielding layer formed thereon, forming a contact feature on the polysilicon feature using a third PSM having a third patterned light shielding layer formed thereon, and forming a metal feature on the contact feature using a fourth PSM having a fourth patterned light shielding layer formed thereon, wherein at least one of the third and fourth patterned light shielding layers is patterned substantially similarly to at least one of the first and second patterned light shielding layers.

Abstract: A method for producing an optical part includes an irradiation process for irradiating a radiation-sensitive polymerizable composition with a radiation. The radiation-sensitive polymerizable composition includes at least a polymerizable compound (a) and a polymerizable or non-polymerizable component (c). The irradiation process includes at least a first step of irradiating with a radiation only a first irradiation region that is a portion of the radiation-sensitive polymerizable composition and a second step of irradiating with a radiation only a second irradiation region that is a portion of the radiation-sensitive polymerizable composition and is different from the first irradiation region in at least one of size and position. When the component (c) is polymerizable, the polymerization rate of the component (c) is controlled to be lower than that of the polymerizable compound (a) in the first and the second steps.

Abstract: A belt-like work (11) provided with a photosensitive layer is conveyed in a work conveying direction F at a work conveying speed V. An illuminating section (30) illuminates a photomask (29) in an exposure period T synchronized with the work conveying speed V. The photomask (29) is disposed at a proximity gap from the belt-like work (11). Mask patterns (33) on the photomask (29) are exposed on the belt-like work (11) to form periodic patterns thereon.

Abstract: A multiple etch process for forming a gate in a semiconductor structure in which a cut area is first formed followed by the forming of the gate conductor lines.

Abstract: A system and method for forming encoded microparticles is described. One embodiment includes an encoded microparticle, the microparticle comprising a plurality of segments aligned along an axis, wherein the plurality of segments define a code for the microparticle; and an outer cuboid encapsulating the plurality of segments, wherein the plurality of segments are detectable through the outer cuboid.

Abstract: A substrate processing method includes a first process (step S12 to step S16) of forming a first resist pattern by exposing a substrate having thereon a first resist film to lights, developing the exposed substrate and cleaning the developed substrate; and a second process (step S17 to step S20) of forming a second resist pattern by forming a second resist film on the substrate having thereon the first resist pattern, exposing the substrate having thereon the second resist film to lights, and developing the exposed substrate. A first processing condition is determined based on first data showing a relationship between a first processing condition under which a cleaning process is performed on the substrate in the first process (step S16) and a line width of the second resist pattern, and the first process (step S16) is performed on the substrate under the determined first processing condition.

Abstract: A patterning process includes (1) coating and baking a first positive resist composition to form a first resist film, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) applying a resist-modifying composition to the first resist pattern and heating to modify the first resist pattern, (3) coating and baking a second positive resist composition to form a second resist film, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The modified first resist film has a contact angle with pure water of 50°-85°.

Abstract: A method of forming a pattern including a first pattern portion having a first minimum dimension and a second pattern portion having a second minimum dimension includes a first exposure step of performing exposure using a Levenson-type mask and a second exposure step of performing exposure using a half tone-type mask. When second minimum dimension is 1.3 time or more than the first minimum dimension, the exposure amount of the second exposure step is set to be equal to or smaller than the exposure amount of the first exposure step.

Abstract: The present invention relates to a method for performing high speed electron beam lithography (EBL). An electron beam source (EBS), capable of emitting an electron beam towards the energy sensitive resist, forms a first pattern (P1) on the substrate, the first pattern defining a first direction (D1) on the substrate. The electron beam source then forms a second pattern (P2) on the substrate. The energy and/or dose delivered to the energy sensitive resist during the exposure of the first and the second pattern is dimensioned so that the threshold dose/energy of the energy sensitive resist is reached on the overlapping portions of the first and the second patterns (P1, P2). The invention provides a high speed technique for the production of substrates with high quality developed patterns, e.g. hole or dot arrays, by electron beam lithography. Each hole or dot may be defined by the mutually overlapping portions of the first and second pattern, e.g.

Abstract: Methods for patterning integrated circuit (IC) features with varying dimensions are provided. In an example, a method includes forming a first patterned radiation-sensitive resist layer over a device substrate using a first mask, wherein the first patterned radiation-sensitive resist layer includes a first portion of an IC pattern; using the patterned first radiation-sensitive resist layer as a mask to form the first portion of the IC pattern in the device substrate; forming a second patterned radiation-sensitive resist layer over the device substrate using a second mask, wherein the second patterned radiation-sensitive resist layer includes a second portion of the IC pattern; and using the patterned second radiation-sensitive resist layer as a mask to form the second portion of the IC pattern in the device substrate. The combined first and second portions of the IC pattern in the device substrate form an IC feature having a dimension greater than dimensions of the first and second portions.

Abstract: A pattern-forming method, including: forming a first resist film by applying a first chemically amplified resist composition onto a support, forming a plurality of resist patterns by selectively exposing and then developing the first resist film, forming a plurality of coated patterns by forming a coating film composed of a metal oxide film on the surface of each resist pattern, forming a second resist film by applying a second chemically amplified resist composition onto the support having the coated patterns formed thereon, and selectively exposing and then developing the second resist film, thereby forming a pattern composed of the plurality of coated patterns and a resist pattern formed in the second resist film onto the support.

Abstract: A method of forming a variable pattern across a wafer using a reticle forms a plurality of first patterns on the wafer. The first pattern is repeated across the wafer and each first pattern has a first readable element. The method also forms a plurality of second patterns on the wafer. The second patterns is repeated across the wafer and each second pattern has a second readable element. The second patterns are positioned relative to the first patterns by aligning a first second pattern relative to one portion of a corresponding first pattern and then incrementally misaligning each successive second pattern in a row or a column relative to its corresponding first pattern. Thus, each corresponding first readable element and second readable element form a corresponding variable pattern.

Abstract: A method of measuring shot shape includes sequentially exposing a substrate with main scale marks (32) in compliance with a predetermined map, and forming a reference grid including a plurality of the main scale marks (32) arranged in the predetermined map in at least one shot region, exposing a shot for measuring, via a projection optical system, that includes a plurality of auxiliary scale marks (34) arranged in the predetermined map in the shot region, measuring a relative positional relationship between adjacent main scale marks (32), measuring an amount of deviation between the main scale marks (32) and the auxiliary scale marks (34), and correcting the reference grid based on the relative positional relationship, and calculating a shot shape of the shot for measuring based on the corrected reference grid and the amount of deviation.

Abstract: The energy distribution of exposure light directed passing through the slit of an exposure apparatus is determined. A photoresist layer on a substrate is exposed over a plurality of shots while changing the intensity of the exposure light for each shot. Then the photoresist layer is developed to form a sample photoresist layer. An image of the developed sample photoresist layer is analyzed for color intensity. Values of the color intensity across a selected one of the shots are correlated with values of the intensity of the exposure light to produce an energy distribution of the exposure light along the length of the slit. The energy distribution is used to change the slit so that a more desirable energy distribution may be realized when the slit is used in a process of manufacturing a semiconductor device.

Abstract: Fluorine-passivated reticles for use in lithography and methods for fabricating and using such reticles are provided. According to one embodiment, a method for performing photolithography comprises placing a fluorine-passivated reticle between an illumination source and a target semiconductor wafer and causing electromagnetic radiation to pass from the illumination source through the fluorine-passivated reticle to the target semiconductor wafer. In another embodiment, a fluorine-passivated reticle comprises a substrate and a patterned fluorine-passivated absorber material layer overlying the substrate. According to another embodiment, a method for fabricating a reticle for use in photolithography comprises providing a substrate and forming a fluorine-passivated absorber material layer overlying the substrate.

Abstract: A pattern forming method includes providing a first mask with a first aperture, forming a first transfer pattern on a resist by irradiating a first electron beam through the first aperture, the first transfer pattern extending in a first direction and having a boundary along a circumference thereof, and the first electron beam having a cross section of a first square when emerging from the first aperture, and forming a second transfer pattern on the resist by irradiating a second electron beam through the first aperture, the second transfer pattern extending in the first direction and overlapping a portion the boundary of the first transfer pattern, and the second electron beam having a cross section of a second square when emerging from the first aperture.

Abstract: A pellicle is provided to one end surface of end surfaces of a frame. Another end surface of the end surfaces of the frame has an area that opposes a substrate. A configuration is adopted that prevents the deformation of the one end surface of the frame and the shape of the opposing area on the other end surface from affecting one another.

Abstract: An alignment method is disclosed, in which a distance between a substrate and a photomask is set at a predetermined exposure gap. The photomask is rectangular, and includes a first side, and a second side opposite to the first side. A distance between a midpoint of the first side and the substrate is matched with the exposure gap. The photomask is rotated about, as an axis, a line that connects the midpoint of the first side and a midpoint of the second side to each other, whereby distances between both ends of the first side and the substrate are individually matched with the exposure gap. The photomask is rotated about the first side taken as an axis, whereby a distance between the midpoint of the second side and the substrate is matched with the exposure gap.

Abstract: A method of lithographically patterning a substrate that has photoresist having removal areas and non-removal areas includes first exposing at least the non-removal areas to radiation effective to increase outer surface roughness of the photoresist in the non-removal areas at least post-develop but ineffective to change photoresist solubility in a developer for the photoresist to be cleared from the non-removal areas upon develop with the developer. Second exposing of radiation to the removal areas is conducted to be effective to change photoresist solubility in the developer for the photoresist to be cleared from the removal areas upon develop with the developer. The photoresist is developed with the developer effective to clear photoresist from the removal areas and to leave photoresist in the non-removal areas that has outer surface roughness in the non-removal areas which is greater than that before the first exposing. Other implementations and embodiments are contemplated.

Abstract: An apparatus and method for aligning a mask that includes disposing and firstly aligning a mask over a first substrate, with a space interposed therebetween, bringing the mask into contact with the first substrate and then measuring the alignment state of the mask with respect to the first substrate to detect an alignment error, secondly aligning the mask with respect to the first substrate based on the alignment error, transferring the first substrate to the next process, disposing and thirdly aligning the mask over a second substrate with the space interposed therebetween, and bringing the mask into contact with the second substrate.

Abstract: The method of forming a pattern includes forming a first photosensitive layer pattern including a first pattern in a first region of a substrate and a second pattern in a second region of the substrate, by performing a first photolithography process using a photomask having a first mask region and a second mask region. The first pattern is transferred from the first mask region, and the second pattern is transferred from the second mask region. The method further includes forming a second photosensitive layer pattern including a third pattern in the second region of the substrate and a fourth pattern in the first region of the substrate, by performing a second photolithography process using the photomask. The third pattern is transferred from the first mask region, and the fourth pattern is transferred from the second mask region.

Abstract: Improved complementary phase shift mask (c:PSM) imaging techniques are described, including a method in which scattering bars are provided on the trim mask in order to allow better CD uniformity to be achieved in the double exposure process. The number, size and position of the scattering bars can be optimised to achieve a desired isofocal CD and/or a desired level of sensitivity of the CD to trim exposure energy used in the second exposure step of the c:PSM process. The trim exposure dose can be regulated, and/or the trim width used on the trim mask can be optimised, to compensate for iso-dense bias so as to achieve optical proximity correction.

Abstract: Provided is a method of manufacturing a liquid ejection head, the liquid ejection head including: a substrate having an energy generating element that generates energy for ejecting liquid; and a flow path forming member having, on an upper side of the energy generating element, an ejection orifice for ejecting the liquid and a bubble generating chamber communicated with the ejection orifice, the method including: preparing a negative photosensitive resin as a material constituting the flow path forming member; and performing first exposure treatment for forming a first image constituting a side wall of the bubble generating chamber and second exposure treatment for forming a second image constituting a side wall of the ejection orifice so that a side wall of the first image and a side wall of the second image cross each other diagonally.

Abstract: An exposure method includes generating a reticle exposure pattern based on a target pattern, performing a lithography simulation based on the reticle exposure pattern to generate a simulation pattern that simulates a resist pattern formed by reticle exposure, generating differential data between the target pattern and the simulation pattern, generating a first electron-beam exposure pattern based on the differential data, generating a reticle based on the reticle exposure pattern, performing an optical exposure process with respect to a resist by use of the reticle, and performing an electron-beam exposure process with respect to the resist based on the first electron-beam exposure pattern.

Abstract: Methods to pattern features in a substrate layer by exposing a photoresist layer more than once. In one embodiment, a single reticle may be exposed more than once with an overlay offset implemented between successive exposures to reduce the half pitch of the reticle. In particular embodiments, these methods may be employed to reduce the half pitch of the features printed with 65 nm generation lithography equipment to achieve 45 nm lithography generation CD and pitch performance.

Abstract: The present disclosure provides a method of making a mask. The method includes providing a substrate having a first attenuating layer on the substrate and a first imaging layer on the first attenuating layer; performing a first exposure to the first imaging layer using a first radiation energy in writing mode; performing a first etching to the first attenuating layer; performing a second etching to the substrate; forming a second imaging layer on the first attenuating layer and the substrate; performing a second exposure to the second imaging layer using a light energy and another mask; and performing a third etching to the first attenuating layer after the second exposure.

Abstract: A method for fabricating an image sensor device is disclosed. The method for fabricating an image sensor device comprises forming a photosensitive layer on a substrate. The photosensitive layer is exposed through a first photomask to form an exposed portion and an unexposed portion. The unexposed portion is partially exposed through a second photomask to form a trimmed part, wherein the second photomask comprise a first segment and a second segment that has a transmittance greater than that of the first segment. The trimmed part is removed to form photosensitive structures. The photosensitive structures are reflowed to form a first microlens and a second microlens having different heights.

Abstract: A method for improving the efficiency of the electron-beam exposure is provided, comprising: step 1) coating a positive photoresist on a wafer to be processed, and performing a pre-baking; step 2) separating pattern data, optically exposing a group of relatively large patterns, and then performing a post-baking; step 3) developing the positive photoresist; step 4) performing a plasma fluorination; step 5) performing a baking to solidify the photoresist; step 6) coating a negative electron-beam resist and performing a pre-baking; step 7) electron-beam exposing a group of fine patterns; step 8) performing a post-baking; and step 9) developing the negative electron-beam resist, so that the fabrication of the patterns is finished. According to the invention, it is possible to save 30-60% of the exposure time. Thus, the exposure efficiency is significantly improved, and the cost is greatly reduced. Further, the method is totally compatible with the CMOS processes, without the need of any special equipments.

Abstract: A manufacturing method of an optical element is provided, the optical element comprising: a shield part formed by a light shielding film formed and patterned on a substrate; a light transmission part formed by partially exposing a surface of the substrate; and a phase shifter part formed by partially etching the surface of the substrate, the method comprising the steps of: preparing an optical element blank with the light shielding film and a first resist film laminated on the substrate in this order; and forming a first resist pattern by applying drawing and development to the first resist film, covering a formation scheduled area of the shield part, and demarcating the formation scheduled area of the phase shifter part.

Abstract: A photolithographic mask set for creating a plurality of characters on a device includes a plurality of photolithographic masks, wherein each mask includes at least one mask character area and at least one mask character field area that surrounds said mask character area; wherein each said mask character field area has a radiation energy density transmission factor Tf that is greater than zero, and wherein each mask character area has a radiation energy density transmission factor Tc that is greater than zero, such that each mask character field area and each mask character area of each mask is not opaque.

Abstract: A printed circuit board substrate includes a metal-clad substrate and a number of N spaced circuit substrates arranged on the metal-clad substrate along an imaginary circle, N is a natural number greater than 2. The circuit substrates are equiangularly arranged about the center of the circle, and each of the circuit substrates is oriented 360/N degrees with respect to a neighboring printed circuit board.

Abstract: A method suitable for reducing side lobe printing in a photolithography process is enabled by the use of a barrier layer on top of a photoresist on a substrate. The barrier layer is absorbing at the imaging wavelength of the underlying photoresist and thus blocks the light from reaching the photoresist. A first exposure followed by a development in an aqueous base solution selectively removes a portion of the barrier layer to reveal a section of the underlying photoresist layer. At least a portion of the revealed section of the photoresist layer is then exposed and developed to form a patterned structure in the photoresist layer. The barrier layer can also be bleachable upon exposure and bake in the present invention.

Abstract: A method of forming a resist pattern that includes: applying a positive chemically amplified resist composition to a support to form a first resist film, exposing a region on a portion of the first resist film, performing a post exposure bake treatment and then performing developing to form a first resist pattern, and applying a negative chemically amplified resist composition to the support having the first resist pattern formed thereon, thereby forming a second resist film, exposing a region of the second resist film that includes the positions in which the first resist pattern has been formed, performing a post exposure bake treatment at a bake temperature that increases the solubility of the first resist film in an alkali developing solution and decreases the solubility of the second resist film in an alkali developing solution, and then performing developing to form a resist pattern.

Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Abstract: A marker, for example an alignment marker or an overlay marker is formed in two steps. First, a pattern of two chemically distinct feature types having a pitch comparable to product features is formed. This pattern is then masked by resist in the form of the desired marker, which has a larger pitch than the pattern. Finally, one of the two feature types is selectively etched in the open areas. The result is a marker with a large pitch suitable to be read with long wavelength radiation but the edges of the features are defined in an exposure step having a pitch comparable to the product features.

Abstract: A double pattern is formed by coating a first positive resist composition onto a substrate, patternwise exposure to radiation, and development with alkaline developer to form a first resist pattern; applying heat and/or radiation to render the first resist pattern insoluble in a second solvent and in a second developer; coating a second resist composition on the first resist pattern, patternwise exposure to radiation, and development with second developer to form a second resist pattern. The resin in the first resist composition comprises recurring units of formula (1) wherein R1 is H, CH3 or CF3, m=1 or 2, n=0 or 1.

Abstract: The method prepares a substrate provided thereon with a first resist film having a first pattern of first pillars spaced at intervals, the pillars having a first height, and forms a second resist film on the substrate. The second resist film is formed by alternately performing, each at least twice, applying of a resist solution to the substrate such that at least the spaces between adjacent first pillars are filled with a resist solution having a thickness smaller than the first height, and by heat-treating of the substrate to solidify the resist solution thus applied, thereby forming a resist layer, whereby the spaces between the adjacent first pillars are filled with resist layers, as the second resist film, having a total thickness at least approximately equal to the first height.

Abstract: A method of manufacturing a semiconductor device includes the following processes. A first resist layer covering an etching object is patterned to form a first resist pattern. Then, a filling layer that covers the first resist pattern and has a flat upper surface is formed. Then, a second resist layer covering the flat upper surface is patterned to from a second resist pattern.

Abstract: A system and method is provided which predicts problematic areas for lithography in a circuit design, and more specifically, which uses modeling data from a modeling tool to accurately predict problematic lithographic areas. The method includes identifying surface heights of plurality of tiles of a modeled wafer, and mathematically mimicking a lithographic tool to determine best planes of focus for exposure for the plurality of tiles.

Abstract: A method of forming a resist pattern including: forming a resist film on a substrate using a chemically amplified negative resist composition; forming a latent image of a first line and space pattern by subjecting the resist film to first exposure through a photomask; forming a latent image of a second line and space pattern so as to intersect with the latent image of the first line and space pattern by subjecting the resist film to second exposure through a photomask; and subjecting the resist film to developing to form a hole pattern in the resist film.

Abstract: The present invention provides a method and an apparatus for generating periodic patterns by step-and-align interference lithography, wherein at least two coherent light beams with a pattern are controlled to project onto a substrate to be exposed to form an interference-patterned region on the substrate. Thereafter, by means of moving the substrate or the light beams stepwisely, a patterned region with a large area can be formed on the substrate. According to the present invention, the optical path and exposure time may be shortened to reduce defect formation during lithographic processing and to improve the yield.

Abstract: A hologram reticle and method of patterning a target. A layout pattern for an image to be transferred to a target is converted into a holographic representation of the image. A hologram reticle is manufactured that includes the holographic representation. The hologram reticle is then used to pattern the target. Three-dimensional patterns may be formed in a photoresist layer of the target in a single patterning step. These three-dimensional patterns may be filled to form three-dimensional structures or else used in a multi-surface imaging composition. The holographic representation of the image may also be transferred to a top photoresist layer of a top surface imaging (TSI) semiconductor device, either directly or using the hologram reticle. The top photoresist layer may then be used to pattern an underlying photoresist layer with the image. The lower photoresist layer is used to pattern a material layer of the device.

Abstract: The invention relates to a method with contrast reversal which, inter alia, opens up new areas of application for resists.

Abstract: A method for manufacturing a planar optical waveguide device including a core of which a top face is provided with a groove section filled with a groove section filler made of a low refractive index material having a refractive index lower than that of the core, the method including; a first high refractive index material layer forming step of forming a high refractive index material layer; a low refractive index material layer forming step of forming a low refractive index material layer made of the low refractive index material on the high refractive index material layer; a groove section filler forming step of forming the groove section filler by trimming both lateral portions of the low refractive index material layer; and a second high refractive index material layer forming step of forming a high refractive index material layer so as to fill the both sides of the lateral portions of the groove section filler.

Abstract: A system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings.

Abstract: A photomask for exposure of a semiconductor wafer using dipole illumination and method of manufacturing the same is disclosed. A method of forming a pattern on a semiconductor using the photomask is also disclosed. The photomask may have an array of islands that are used for printing lines using dipole illumination. The photomask may have sub-resolution assist features (SRAF) to assist in printing the lines. The SRAF may include an array of holes.

Abstract: The present disclosure provides a reusable and reimageable medium including a substrate coated with a photochromic polymer. The photochromic polymer has a glass transition temperature ranging from 30° C. to 150° C., such as from about 30° C. to about 100° C., and the coated substrate converts to a colored state when both UV light and temperatures ranging from 30° C. up to 100° C. are applied to the coated substrate. The present disclosure also provides a method for producing and using the reusable and reimageable medium.

Abstract: A pattern forming method includes (1) selectively exposing a first resist layer, and developing the exposed first resist layer to form a first pattern, (2) applying a resin composition containing a hydroxyl group-containing resin and a solvent to the first pattern, baking the applied resin composition, and developing the baked resin composition to form a second pattern, the hydroxyl group-containing resin becoming insoluble or scarcely soluble in a developer when baked, and (3) totally or selectively exposing the second pattern to make the second pattern partly soluble in the developer, and developing the exposed second pattern to form a third pattern in which at least a hole or a groove is formed in the second pattern.

Abstract: According to an aspect of the present invention, there is provided a method for forming a pattern including: applying a photosensitive resin onto a film on a wafer substrate; partly exposing the photosensitive resin to light and developing the photosensitive resin to form a first pattern having an opening portion; applying a photo-curable material onto the film exposed by the opening portion of the first pattern; bringing one face of an optically-transmissive template having a second pattern formed on the one face into contact with the photo-curable material, the second pattern including projections and reentrants; irradiating the photo-curable material with light; and separating the template from the photo-curable material.