Abstract: A method for fabricating a semiconductor device includes etching a substrate to form a body separated by a trench, forming liner layers that cover sidewalls of the body, forming a sacrificial layer that fills the trench and exposes an upper sidewall of each liner layer, forming a hard mask pattern that covers a first one of the liner layers having the exposed upper sidewalls, forming a barrier layer to be selectively grown over the exposed upper sidewalls of a second one of the liner layers, removing the hard mask pattern, removing a part of the sacrificial layer to expose a lower sidewall of a first one of the liner layers, and removing the lower sidewall of the first one of the liner layers to form a side contact.

Abstract: The invention relates to a method and resulting structure that can substantially minimize and/or eliminate void formation during an isolation trench isolation fill process for typical trench shaped and goal-post shaped isolation regions. First, a thin thermal oxidation layer is grown on the sidewall of each trench and then a layer of polysilicon is deposited above the oxidation layer and oxidized. In one embodiment, a repeating series of polysilicon deposition and polysilicon oxidation steps are performed until each trench has been completely filled. In another embodiment, within a goal-post shaped trench having a wider upper portion and a narrower lower portion, the remainder of the upper wider trench portion is filled using a conventional high density plasma technique.

Abstract: A method of forming a shallow trench isolation is provided. In the method, a barrier oxide layer is formed on a substrate, and a silicon nitride layer is formed on the barrier oxide layer. A metal layer is formed on the silicon nitride layer, and an ultra-thin photoresist is formed on the metal layer. The ultra-thin photoresist layer is patterned with short wavelength radiation to define a pattern for a shallow trench. The ultra-thin photoresist layer is used as a mask during a first etch step to transfer the shallow trench pattern to the metal layer. The first etch step includes an etch chemistry that is selective to the metal layer over the ultra-thin photoresist layer. The metal layer is used as a hard mask during a second etch step to form the shallow trench by etching portions of the silicon nitride layer, barrier oxide layer and substrate.

Abstract: A light-stable physical developer comprising a solution of silver ions, a desensitizing agent and a reducing agent. A method for the detection of one or more components of an aggregate formed between at least one specific binding agent and its corresponding bindable substance by labelling at least one component of said aggregate with a marker and contacting said aggregate with said light-stable physical developer, whereby under influence of the marker a metal particle is formed which can be detected. Further the invention also relates to products, e.g. a test-kit adapted for carrying out the above mentioned method.

Abstract: When irradiated, a mixture of (a) a non-volatile substance containing at least one olefinic double bond and (b) a dibenzalacetone palladium complex deposits zero-valent palladium. Electrically non-conductive carrier materials which have been coated with a layer of said mixture can, after irradiation, be metallized by metal deposition without current, with electrically conductive coatings or patterns being obtained.

Abstract: A reducible image-containing element which comprises a support material and a photopolymerized layer provided thereon, said photopolymerized layer having an image area which is cured at the upper part and not cured at the lower part, said non-cured lower part containing at least one of polyvalent phenols and their derivatives in an amount effective in preventing said non-cured lower part from curing.

Abstract: Aqueous solutions are provided for treating image-bearing lithographic plates.