Abstract: An electrode substrate for a transparent light emitting device display containing a transparent substrate; a wire electrode unit, which is provided on the transparent substrate and comprises a metal mesh pattern; and at least one light emitting device mounting unit provided on the transparent substrate, in which both an upper surface and a lateral surface of the metal mesh pattern of the wire electrode unit comprise a darkening layer pattern, and both an upper surface and a lateral surface of the light emitting device mounting unit do not comprise a darkening layer pattern.

Abstract: Disclosed are a toner for electrostatic image development and an image formation process using the same which can achieve high varnish application property and high adhesion of a heat-fixed image to a varnish layer even when the varnish layer is formed on the fixed image formed by an image formation process of an electrophotographic system. The toner for electrostatic image development includes toner particles containing at least a binder resin, a colorant and a parting agent, and the binder resin contains a polyfunctional acrylate-modified polyester resin obtained by modification with a polyfunctional acrylate compound. In the toner for electrostatic image development, it is preferable that the toner particles have a core-shell structure, in which the surface of a core particle is coated with a shell layer, and tine polyfunctional acrylate-modified polyester resin is contained in the shell layer.

Abstract: A developing method including a developing step in which, while a wafer horizontally held by a spin chuck is being rotated, the wafer is developed by supplying a developer onto a surface of the wafer, wherein provided before the developing step is a pre-wetting step in which, simultaneously with the developer being supplied from a first nozzle that is located on a position near a central part of the surface of the rotating wafer, a deionized water as a second liquid is supplied from a second nozzle that is located on a position nearer to an outer peripheral part of the wafer than the first nozzle, to thereby spread out the developer in the rotating direction of the wafer by a wall that is formed by the deionized water flowing to the outer peripheral side of the wafer with the rotation of the wafer.

Abstract: A substrate treatment method of performing treatment on a substrate on which a pattern mask has been formed by exposure and developing treatment to improve roughness of the pattern mask includes the processes of: mounting and heating the substrate on a stage in a treatment container; then supplying a solvent gas to a center portion of a front surface of the substrate while exhausting the solvent gas from a periphery of the substrate to swell the pattern mask; and while performing the process of supplying and exhausting a solvent gas, forming a temperature gradient in the substrate via the stage such that a temperature at the center portion of the substrate is higher than a temperature at a peripheral portion of the substrate.

Abstract: The present invention relates to an aqueous composition for coating over a photoresist pattern comprising a first water soluble compound comprising at least a silicon moiety and at least one amino group, and a second compound comprising at least 1 carboxylic acid group. The invention further relates to processes for using the novel invention.

Abstract: A substrate treatment method of performing treatment on a substrate on which a pattern mask has been formed by exposure and developing treatment to improve roughness of the pattern mask includes the processes of: mounting the substrate on a stage in a treatment container; and repeating a plurality of times steps of supplying a solvent gas to a center portion of the substrate while exhausting the solvent gas from a periphery of the substrate to swell the pattern mask, and then supplying a drying gas for drying the solvent supplied to the substrate to the center portion of the substrate while exhausting the drying gas from the periphery of the substrate.

Abstract: A system and method for reducing defects in photoresist processing is provided. An embodiment comprises cleaning the photoresist after development using an alkaline environment. The alkaline environment may comprise a neutral solvent and an alkaline developer. The alkaline environment will modify the attraction between residue leftover from development and a surface of the photoresist such that the surfaces repel each other, making the removal of the residue easier. By removing more residue, there will be fewer defects in the photolithographic process.

Abstract: After a developing step, a substrate is spun at high speeds without supplying a cleaning liquid to a surface of the substrate. This causes a large centrifugal force to act on a developer on a resist film. Consequently, the developer can be removed rapidly from the surface of the substrate. As a result, development can be stopped at an expected timing. Moreover, a circuit pattern having an expected dimension can be obtained. At this time, a dissolved product is also removable with the developer from the substrate. This can avoid failure in development caused by the dissolved product. Consequently, suitably maintained quality of negative development can be achieved with a reduced usage amount of the cleaning liquid.

Abstract: Methods and apparatus for forming a sacrificial during a novel process sequence of lithography and photoresist patterning are provided. In one embodiment, a method of processing a substrate having a resist material and an anti-reflective coating material thereon includes depositing an organic polymer layer over the surface of the substrate inside a process chamber using a CVD technique. The CVD technique includes flowing a monomer into a processing region of the process chamber, flowing an initiator into the processing region through one or more filament wires heated to a temperature between about 200° C. and about 450° C., and forming the organic polymer layer. In addition, the organic polymer layer is ashable and can be removed from the surface of the substrate when the resist material is removed from the surface of the substrate.

Abstract: A developing treatment method includes: a treatment solution supplying step of supplying a treatment solution made by diluting a hydrophobizing agent hydrophobizing a resist pattern with hydrofluoroether onto a substrate on which a rinse solution has been supplied after development of the resist pattern; a hydrophobic treatment stabilizing step of stabilizing a hydrophobic treatment of the resist pattern with the supply of the treatment solution stopped and rotation of the substrate almost stopped; and a treatment solution removing step of removing the treatment solution from a top of the substrate on which the treatment solution has been supplied. The hydrophobizing agent is trimethylsilyldimethyl-amine.

Abstract: To provide a rinsing agent for lithography, which contains C6-C8 straight-chain alkanediol, and water.

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes dispensing a liquid on a wafer. The method includes raising the wafer. The method includes lowering the wafer after the raising. The wafer is spun as it is lowered, thereby removing at least a portion of the liquid from the wafer. The present disclosure also provides an apparatus for fabricating a semiconductor device. The apparatus includes a wafer chuck that is operable to hold a semiconductor wafer and secure the wafer thereto. The wafer has a front surface and a back surface. The apparatus includes a dispenser that is operable to dispense a liquid to the front surface of the wafer. The apparatus includes a mechanical structure that is operable to: spin the wafer chuck in a horizontal direction; and move the wafer chuck downwards in a vertical direction while the wafer chuck is being rotated.

Abstract: The present invention provides methods and an apparatus controlling and minimizing process defects in a development process, and modifying line width roughness (LWR) of a photoresist layer after the development process, and maintaining good profile control during subsequent etching processes. In one embodiment, a method for forming features on a substrate includes developing and removing exposed areas in the photosensitive layer disposed on the substrate in the electron processing chamber by predominantly using electrons, removing contaminants from the substrate by predominantly using electrons, and etching the non-photosensitive polymer layer exposed by the developed photosensitive layer in the electron processing chamber by predominantly using electrons.

Abstract: A substrate treatment method of performing treatment on a substrate on which a pattern mask has been formed by exposure and developing treatment to improve roughness of the pattern mask includes the processes of: mounting and heating the substrate on a stage in a treatment container; then supplying a solvent gas to a center portion of a front surface of the substrate while exhausting the solvent gas from a periphery of the substrate to swell the pattern mask; and while performing the process of supplying and exhausting a solvent gas, forming a temperature gradient in the substrate via the stage such that a temperature at the center portion of the substrate is higher than a temperature at a peripheral portion of the substrate.

Abstract: A substrate treatment method of performing treatment on a substrate on which a pattern mask has been formed by exposure and developing treatment to improve roughness of the pattern mask includes the processes of: mounting the substrate on a stage in a treatment container; and repeating a plurality of times steps of supplying a solvent gas to a center portion of the substrate while exhausting the solvent gas from a periphery of the substrate to swell the pattern mask, and then supplying a drying gas for drying the solvent supplied to the substrate to the center portion of the substrate while exhausting the drying gas from the periphery of the substrate.

Abstract: An indication clothing being adapted to be worn by an object is provided. The indication clothing comprises an indication sign, a storage module, a G-sensor and a process module. The storage module is configured to store threshold information. The G-sensor is configured to sense an instantaneous moving action of the object and generate a sensed value related to the instantaneous moving action when the object is moving. The process module is electrically connected to the indication sign, the G-sensor and the storage module, and is configured to control the indication sign by comparing the sensed value with the threshold information so that the indication sign indicates the instantaneous moving action of the object.

Abstract: A layer of photoresist is spread on a metal substrate and heated, this layer is exposed through a mask to UV irradiation, the parts not photocured are developed, by dissolving them, so as to obtain a mold, a first layer of metal or of an alloy is galvanically deposited in the open parts of the mold, the metal structure and the mold are leveled by machining so as to obtain a plane upper surface, a metal ply layer is deposited on the entire upper surface, and then the above steps are repeated. A second layer of metal or an alloy is galvanically deposited in the open parts of the mold, the multilayer metal structure obtained is detached from the substrate by delamination and the photoresist is cured, the photoresist is separated so as to free the multilayer metal structure, and then that portion of the metal ply layer or layers which is not inserted between two electrodeposited metal layers is removed.

Abstract: A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.

Abstract: Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain embodiments, the process solution may reduce post-development defects such as pattern collapse or line width roughness when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of defects such as pattern collapse and/or line width roughness on a plurality of photoresist coated substrates employing the process solution of the present invention.

Abstract: The present invention provides a resist substrate treating solution and a method employing the solution for treating a resist substrate. This treating solution enables to remove efficiently resist residues remaining on a surface of the resist substrate after development, and further to miniaturize a resist pattern. The solution is used for treating a resist substrate having a developed photoresist pattern, and comprises a solvent incapable of dissolving the photoresist pattern and a polymer soluble in the solvent. The developed resist substrate is brought into contact with the treating solution, and then washed with a rinse solution such as water to remove efficiently resist residues remaining on the resist substrate surface. The solvent and the polymer are preferably water and a water-soluble polymer, respectively.

Abstract: The invention provides a novel rinse solution used in the step of rinse treatment of a patterned photoresist layer developed with an aqueous alkaline developer solution in a photolithographic process for the manufacture of semiconductor devices and liquid crystal display panels. The rinse solution provided by the invention is an aqueous solution of a nitrogen-containing heterocyclic compound such as imidazoline, pyridine and the like in a concentration up to 10% by mass. Optionally, the rinse solution of the invention further contains a water-miscible alcoholic or glycolic organic solvent and/or a water-soluble resin. The invention also provides a lithographic method for the formation of a patterned photoresist layer including a step of rinse treatment of an alkali-developed resist layer with the rinse solution defined above. The invention provides an improvement on the lithographic process in respect of the product quality and efficiency of the process.

Abstract: A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.

Abstract: In the present invention, a plurality of heat treatment plates are provided side by side in a linear form on a base of a heat treatment apparatus in a coating and developing treatment system. In the heat treatment apparatus, three transfer member groups are provided which transfer a substrate in zones between adjacent heat treatment plates. At the time when performing a pre-baking treatment in the heat treatment apparatus, the substrate is transferred in order to the heat treatment plates at the same temperature, whereby the heat treatment is dividedly performed on the heat treatment plates. According to the present invention, substrates are subjected to heat treatment along the same route, so that the thermal histories are made uniform among the substrates.

Abstract: Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention.

Abstract: The present invention provides a rinsing method capable of satisfactorily rinsing the surface of a resist film regardless of the condition of the surface of the resist film so that development defects caused by residuals produced by development may be reduced. A rinsing method of rinsing a substrate processed by a developing process for developing an exposed pattern comprises the steps of discharging a rinsing liquid onto a central part of the substrate processed by the developing process and coated with a developer puddle while the substrate is stopped or rotated (step 5), stopping discharging the rinsing liquid in a state where the developer puddle remains at least in a peripheral part of the substrate (step 6), and rotating the substrate at a high rotating speed to shake the developer remaining on the substrate off the substrate together with the rinsing liquid (step 7).

Abstract: There is disclosed a developing method of developing a photo-sensitive resist film in which a desired pattern is exposed, including subjecting the exposed photosensitive resist film to a first developing treatment; supplying a cleaning solution having an oxidizing property or alkalinity with respect to the surface of the resist film to the photosensitive resist film subject to the first developing treatment to perform a first cleaning treatment; subjecting the photosensitive resist film subjected to the first cleaning treatment to a second developing treatment; and subjecting the photosensitive resist film subjected to the second developing treatment to a second cleaning treatment.

Abstract: Method for removing contaminants from a surface during semiconductor fabrication. A preferred embodiment comprises developing a resist layer on a top surface of a semiconductor substrate, curing the developed resist layer, and cleaning the developed resist layer with a developer solution to remove contaminants. The cleaning makes use of the same developer solution used to develop the resist layer, so the cleaning makes use of a process that already exists and requires no additional investment to implement, while the curing stabilizes the developed resist layer so that the cleaning does not damage the developed resist layer.

Abstract: In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.

Abstract: The present invention provides a resist substrate-treating solution for improving defects on a developed pattern surface, and also provides a resist substrate treatment method employing the treating solution. The resist substrate-treating solution comprises a solvent and a nitrogen-containing or oxygen-containing water-soluble polymer such as a polyamine, a polyol or a polyether. In the treatment method, a developed resist pattern is treated with the resist substrate-treating solution and then washed with pure water.

Abstract: The present invention provides a pattern-producing method for fining a developed resist pattern without increasing the production cost or impairing the production efficiency seriously. This method comprises the step of bringing a resist pattern after development into contact with a treating solution preferably containing a nonionic surfactant for 60 seconds or more, so as to reduce the effective size of the resist pattern formed by the development. The present invention also provides a resist pattern fined by that method.

Abstract: A solution, apparatus, and method for stripping photoresist from a workpiece are disclosed. Embodiments of the invention describe a solution comprising diluted liquid acetic acid and dissolved gaseous ozone. In an embodiment an ozonated liquid acetic acid solution is prepared by dissolving ozone in liquid DI water and then mixing with liquid acetic acid. In another embodiment an ozonated liquid acetic acid solution is prepared by mixing liquid DI water and liquid acetic acid and then dissolving ozone. The ozonated liquid acetic acid solution is used to strip a layer of photoresist from a workpiece with improved performance.

Abstract: A layer of photoresist is spread on a metal substrate and heated, this layer is exposed through a mask to UV irradiation, the parts not photocured are developed, by dissolving them, so as to obtain a mould, a first layer of metal or of an alloy is galvanically deposited in the open parts of the mould, the metal structure and the mould are levelled by machining so as to obtain a plane upper surface, a metal ply layer is deposited on the entire upper surface, and then the above steps are repeated. A second layer of metal or an alloy is galvanically deposited in the open parts of the mould, the multilayer metal structure obtained is detached from the substrate by delamination and the photoresist is cured, the photoresist is separated so as to free the multilayer metal structure, and then that portion of the metal ply layer or layers which is not inserted between two electrodeposited metal layers is removed.

Abstract: A method of processing an on-press developable lithographic printing plate with ink and/or fountain solution is described. The plate comprises on a substrate a photosensitive layer which is either capable of hardening (negative-working) or solubilization (positive-working) upon exposure to a laser, the non-hardened or solubilized areas of the photosensitive layer being soluble or dispersible in ink and/or fountain solution. The plate is exposed with a laser, heated to an elevated temperature, and then developed with ink and/or fountain solution on a lithographic press. The laser exposed plate is preferably heated by passing through a heating device or while mounted on a lithographic press before on-press development.

Abstract: This invention provides a transparent electrically conductive film, which, while maintaining the light transparency of a transparent film, has excellent electrical conductivity, can be utilized for electromagnetic wave shielding, and does not cause inclusion of air bubbles in the lamination onto other base material, and a process for producing the same. The production process comprises the steps of forming a large number of concaves and convexes having an average height of not more than 0.1 ?m on both sides or one side of a transparent film, forming a resist layer having a pattern shape opposite to the electrically conductive part in the electrically conductive film on the transparent film on its concave-convex side, applying a catalyst for plating onto the resist layer-formed face, separating the resist layer, forming a metal layer by plating, and blackening the metal layer, the metal layer satisfying 1?W/T?500 wherein W represents the width of the metal layer and T represents the height of the metal layer.

Abstract: A picture frame assembly includes a backing plate having a front surface, a rear surface, and a plurality of parallel grooves in one of the surfaces. The material and thickness of the backing plate are chosen so that the backing plate may be plastically deformed about a bending axis parallel to the grooves. At least one frame element, which may be formed integrally with the backing plate, is for provided for retaining a planar picture element against the front surface of the backing plate. A pair of tack elements extending from the rear surface are provided for mounting the assembly to a cylindrical object such as a tree or a candle.

Abstract: Materials and methods for fabricating and using negative index materials are disclosed. A negative index material comprises a three-dimensional volume including a bulk solution and a plurality of unit cells disposed in the bulk solution in a substantially random pattern. Each unit cell comprises a periodic hole array pattern on a substrate or a resonator formed on a first surface of a substrate, and a thin wire pattern formed on a second surface of the substrate. The combination of the unit cells in the bulk solution produces a negative effective permeability and a negative effective permittivity over a frequency band of interest for the three-dimensional volume. The negative index material may be used to focus radiation by directing an incident radiation at the negative index material and generating a focused radiation by a negative refraction of the incident radiation in the negative index material.

Abstract: The invention provides a method capable of preventing the occurrence of collapse of resist pattern accompanied by size reduction in pattern dimensions can be prevented when processing a resist film having been exposed and formed on the surface of a substrate, and in which there is no fear that posterior processes are adversely affected. In the step of processing a resist film having been exposed and formed on the surface of a substrate, a developer mixed with a hydrophobizing agent is fed onto the resist film on the substrate surface; or before rinsing the resist film having been processed, a solvent containing a hydrophobic resin is fed onto the resist film on the substrate surface. Thus, a resist exposed surface is made to be hydrophobic before the rinsing, and thereafter rinsed and dried by spinning.

Abstract: A process for preparing a substantially transparent conductive layer configuration on a support, the layer configuration comprising in any order at least a first layer containing an intrinsically conductive polymer optionally containing structural units represented by formula (I): wherein n is larger than 1 and each of R1 and R2 independently represents hydrogen or an optionally substituted C1-4 alkyl group or together represent an optionally substituted C1-4 alkylene group or an optionally substituted cycloalkylene group, preferably an ethylene group, an optionally alkyl-substituted methylene group, an optionally C1-12 alkyl- or phenyl-substituted ethylene group, a 1,3-propylene group or a 1,2-cyclohexylene group; and a second layer consisting of a non-continuous layer of conductive silver, the process comprising the step of: preparing the second layer by a photographic process; and light emitting diodes, photovoltaic devices, transistors and electroluminescent devices comprising a layer configuration pr

Abstract: The invention relates to a process for amplifying structured resists. The process permits a subsequent increase in the etch resistance and a change in the structure size of the resist even in the case of ultrathin layers. The chemical amplification is carried out in a solvent that is so nonpolar that it does not dissolve the structured resist or dissolves it only to an insignificant extent. Because of the lower surface tension of these solvents, the danger of a collapse of these structures is additionally avoided.

Abstract: A method for treating a micro-emulsion that can be used for removing the ink-accepting areas of a lithographic printing master is disclosed, which enables to recycle the water from the used micro-emulsion. The method comprises the heating of the micro-emulsion to a temperature above 50° C. thereby obtaining an aqueous phase and an organic phase and separating the aqueous phase from the organic phase.

Abstract: A method for treating a photosensitive lithographic printing plate, which comprises exposing the photosensitive lithographic printing plate to laser light, developing with a developer containing an alkali metal silicate and then carrying out post-exposure treatment, said photosensitive lithographic printing plate being prepared by forming a photopolymerizable photosensitive layer having a film thickness of from 1.2 to 4 g/m2 and further forming a protective layer having a film thickness of from 2 to 8 g/m2 on a support having a centerline average height (Ra) of at least 0.35 ?m.

Abstract: A deformable color photographic silver halide material, said color photographic silver halide material comprising on a deformable plastic support at least one blue-sensitive silver halide emulsion layer containing at least one yellow coupler, at least one green-sensitive silver halide emulsion layer containing at least one magenta coupler and at least one red-sensitive silver halide emulsion layer containing at least one cyan coupler, wherein the silver halide emulsions have an overall silver chloride content of at least 95 mol % and at least one silver halide emulsion contains silver halide crystals that are doped with 10 to 700 nmol iridium

Abstract: A process for the post-exposure amplification of resist structures uses amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers. In the first step, a fluorine-containing resist is applied to a substrate. After exposure and development of the resist, bonding of an amplification agent chemically amplifies the resist structures. A fluorine-containing amplification agent is preferably used to achieve an improved reaction between polymer and amplification agent due to the improved miscibility of the molecular chains.

Abstract: This invention relates to a silver halide photographic display element comprising a support, a front side which has at least one silver halide emulsion layer, and a back side, said front and back sides being on opposite sides of the support; wherein said photographic element further comprises printed on the back side a printing ink composition comprising coalesced hydrophobic polymer particles having associated therewith a squarine infrared absorbing dye represented by formula I: 1

Abstract: The invention provides a photographic element comprising a transparent polymer sheet, at least one layer containing negative working photosensitive silver halide and at least one upper protective shield to protect the surface of said transparent polymer.

Abstract: A manufacturing line for manufacturing a print belt comprising a support-forming strip and a photopolymerized resin forming printing characters, the line comprises spreader means adapted to spread the resin on the strip, photopolymerizer means adapted to solidify that portion of the resin that is to correspond to the printing characters, remover means adapted to remove the non-photopolymerized resin from the strip, and drive means adapted to drive the strip in translation in such a manner that each of its transverse sections passes in succession in register with the spreader means, the photopolymerizer means, and the remover means.

Abstract: The invention relates to a photographic element comprising a base and hydrophillic colloid layers comprising at least one layer comprising photosensitive silver halide, wherein said hydrophilic colloid imaging layers further comprise a flexibilizer agent and said flexibilizer agent has a logP of greater than −1.2.

Abstract: The present invention is a photographic element which includes a support, at least one silver-halide emulsion layer superposed on the support and a processing-solution-permeable overcoat overlying the silver-halide emulsion layer that becomes water-resistant in the final product, without requiring lamination or fusing. The presence, in the coating composition, of a compound comprising a blocked copolymer of ethylene oxide and propylene oxide has been found to improve wet durability, prevent the retention of iron, and improve the conversion of the overcoat to a water-resistant layer during processing. The present invention is also directed to a method of making a photographic print involving developing the photographic element.

Abstract: This invention provides a display element comprising a support, a phosphorescent material, and at least one layer containing a silver halide emulsion, wherein the phosphorescent material is not excited upon exposure of the silver halide emulsion. It further provides methods of exposing and processing such display elements.

Abstract: A photographic processing composition, containing at least one compound of formula (I) or (II):