Abstract: Methods of forming patterned features and structures including the patterned features are disclosed. Exemplary methods include selectively forming a surface energy modified surface on a sidewall of structures and/or forming a surface-energy tunable layer on a surface of the substrate. The surface energy modified surface can be formed by depositing material and/or by treating the sidewall surface and/or by treating a surface adjacent the sidewall surface.

Abstract: A method for determining a mask pattern and a method for training a machine learning model. The method for generating data for a mask pattern associated with a patterning process includes obtaining (i) a first mask image (e.g., CTM) associated with a design pattern, (ii) a contour (e.g., a resist contour) based on the first mask image, (iii) a reference contour (e.g., an ideal resist contour) based on the design pattern; and (iv) a contour difference between the contour and the reference contour. The contour difference and the first mask image are inputted to a model to generate mask image modification data. Based on the first mask image and the mask image modification data, a second mask image is generated for determining a mask pattern to be employed in the patterning process.

Abstract: Methods of forming structures including a photoresist absorber layer and structures including the photoresist absorber layer are disclosed. Exemplary methods include forming the photoresist absorber layer that includes at least two elements having an EUV cross section (??) of greater than 2×106 cm2/mol.

Abstract: A light-field projector comprising a light source configured to emit an incident light field illuminating a spatial light modulator (SLM) configured to display a reference SLM image pattern in an SLM plane. The reference SLM image pattern is configured to modulate the incident light field and generate a modulated light. A projection optic is configured to project the modulated light field along a reference optical axis such as to project a virtual image along the reference optical axis. The SLM is configured to display a corrected SLIM image pattern corresponding to the reference SLM image pattern shifted in the SLM plane, such that the virtual image is projected along an apparent projection axis that differs from the reference optical axis and such that the virtual image simulates at least an optical correction. The present disclosure further concerns a method for generating corrected virtual images by using the light field projector.

Abstract: The present invention is intended to provide a reflective photomask blank and a reflective photomask that have high hydrogen radical resistance and minimize a shadowing effect to improve transferability. A reflective photomask blank (10) according to the present embodiment includes a substrate (1), a reflective portion (7), and a low reflective portion (8). The low reflective portion (8) includes an absorption layer (4) and an outermost layer (5). The absorption layer (4) includes a total of 50 atomic % or more of one or more selected from a first material group. The outermost layer (5) includes a total of 80 atomic % or more of at least one or more selected from a second material group. The first material group includes indium, tin, tellurium, cobalt, nickel, platinum, silver, copper, zinc, bismuth, and oxides, nitrides, and oxynitrides thereof.

Abstract: Methods and apparatus for reducing ruthenium oxide on an extreme ultraviolet (EUV) photomask leverage temperature, plasma, and chamber pressure to increase the reduction. In some embodiments, a method includes heating the EUV photomask with a ruthenium (Ru) capping layer with a top surface which has a Ru oxide layer to a temperature of approximately 100 degrees Celsius to approximately a thermal budget of the EUV photomask, flowing a reducing agent gas into an EUV photomask processing chamber, and pressurizing the EUV photomask processing chamber to a process pressure to increase a reducing reaction between the reducing agent gas and a Ru oxide layer on the Ru capping layer. Other embodiments may incorporate remote plasma generators or atmospheric-pressure plasma generators to enhance the reduction of Ru oxides on the Ru capping layer.

Abstract: A method for fabricating a mask is provided. The method includes depositing a target layer over a dielectric substrate; forming a patterned photoresist layer over the target layer according to an integrated circuit (IC) layout; determining a plurality of dry etch control parameters according a material of the target layer and an information of the IC layout; and using a dry etcher set up with the dry etch control parameters, etching the target layer through the patterned photoresist layer.

Abstract: An exposure mask includes a pattern part exposed to light to form a pattern on a substrate, a surrounding part that surrounds a periphery of the pattern part, and correcting pattern parts disposed on the surrounding part. The correcting pattern parts are disposed in a line along an edge of the pattern part. A correcting method of an exposure apparatus includes correcting a light supply direction of a light supply unit based on a movement direction and a speed of the light supply unit, exposing light in the corrected light supply direction, forming exposure patterns by exposing light to correcting pattern parts, determining whether an error occurs in the light supply direction by using the exposure patterns, and correcting the light supply direction based on the determined error.

Abstract: A method for forming a pellicle for an extreme ultraviolet lithography mask is provided. The method includes forming a pellicle membrane over a filter membrane and transfer the pellicle membrane from the filter membrane to a membrane border. Forming the pellicle membrane includes growing carbon nanotubes (CNTs) from in-situ formed metal catalyst particles in a first reaction zone of a reactor, each of the CNTs including a metal catalyst particle at a growing tip thereof, promoting formation of bundles of nanotubes from the individual CNTs in a second zone of the reactor downstream of the first reaction zone. The bundled CNTs are then collected on the filter membrane.

Abstract: In one aspect, a method for producing a diffractive optical element for beam shaping of a laser beam having a first wavelength of at least 100 nm includes providing a laser mirror, the laser mirror having a layered structure made of a substrate, a dielectric layer and optionally an absorption layer, the dielectric layer resting against the substrate or the absorption layer being located between the substrate and the dielectric layer. The method also includes creating a plurality of bulges of the dielectric layer by treating the laser mirror with a series of focused heating laser beams having a second wavelength (?2), the plurality of bulges having a height perpendicular to the dielectric layer, and at least one bulge having a height of at least half the first wavelength (?1).

Abstract: A pellicle for an extreme ultraviolet (EUV) photomask includes a pellicle frame and a main membrane attached to the pellicle frame. The main membrane includes a plurality of nanotubes, and each of the plurality of nanotubes is covered by a coating layer containing Si and one or more metal elements.

Abstract: Provided are a reflective mask blank, a reflective mask, a method for manufacturing a reflective mask, and a method for manufacturing a semiconductor device, capable of preventing occurrence of electrostatic breakdown in a substrate peripheral edge portion. The reflective mask blank comprises a substrate, a multilayer reflective film on the substrate, a protective film on the multilayer reflective film, and an absorber film on the protective film. The absorber film comprises a buffer layer and an absorption layer formed on the buffer layer. When a distance from a center of the substrate to an outer peripheral end of the protective film is denoted by Lcap, and a distance from the center of the substrate to an outer peripheral end of the buffer layer is denoted by Lbuf, Lcap?Lbuf is satisfied. There is at least one location where a total film thickness of the protective film and the buffer layer is 4.5 nm or more in a range of 0.

Abstract: A method of manufacturing an extreme ultraviolet mask including preparing a preliminary layout, forming a plurality of preliminary target patterns by using a plurality of preliminary spacer patterns formed by using the preliminary layout, evaluating presence or absence of an abnormal target pattern among the plurality of preliminary target patterns, preparing a layout configured to form a plurality of spacer patterns by modifying the preliminary layout when the plurality of preliminary target patterns include the abnormal target pattern, and manufacturing an extreme ultraviolet mask with the layout to form a plurality of target patterns by using the plurality of spacer patterns, wherein, the plurality of preliminary spacer patterns extend in one direction.

Abstract: An inspection system includes a storage unit configured to store one or more inspection settings and one or more reference images, a reception unit configured to receive data for specifying a first inspection setting and a first reference image from among the one or more inspection settings and the one or more reference images stored in the storage unit, and an inspection unit configured to receive a scanned image obtained by scanning a print product and inspect the scanned image based on the first inspection setting and the first reference image specified by the data received by the reception unit.

Abstract: An extreme ultraviolet photomask includes a conductive layer; a substrate disposed on the conductive layer; a multilayer, comprising different metals alternately stacked on the substrate; a protective layer disposed on the multilayer; a low-reflectance part disposed on a portion of the protective layer, wherein the low-reflectance part comprises a first absorbent layer disposed on the portion of the protective layer, a low-reflectance layer formed on the first absorbent layer, and a first intagliated part formed at the portion where the protective layer is exposed; and a high-reflectance part disposed on another portion of the protective layer, wherein the high-reflectance part comprises a second absorbent layer disposed on the other portion of the protective layer, a high-reflectance layer disposed on the second absorbent layer, and a second intagliated part formed at the other where the protective layer is exposed.

Abstract: A photomask includes at least one line pattern monitoring mark having unit blocks that include design line patterns. Each of the unit blocks includes three design line patterns sequentially offset in a second direction perpendicular to the first direction, the unit blocks include a first unit block and a second unit block adjacent to the first unit block, the second unit block is offset from the first unit block by a rounding length in the second direction and is spaced apart from the first unit block in the first direction. In a method of manufacturing an integrated circuit device, monitoring line patterns are formed using the photomask, and a line end profile error in the monitoring line patterns is determined based on a cross-sectional structure of the monitoring line patterns taken along a line extending through at least a portion of the monitoring line patterns in the first direction.

Abstract: An image system dynamically updates drive sequences in an image system. Drive sequences are image display settings or display driving characteristics with which a display is operated. The image system may determine the drive sequence at least partially based on input from one or more sensors. For example, the image system may include sensors such as an inertial measurement unit, a light sensor, a camera, a temperature sensor, or other sensors from which sensor data may be collected. The image system may analyze the sensor data to calculate drive sequence settings or to select a drive sequence from a number of predetermined drive sequences. Displaying image content on a display includes providing the display with image data and includes operating the display with various drive sequences.

Abstract: Embodiments relate to a transfer device of a semiconductor light emitting device and a display device of a semiconductor light emitting device using the same. A semiconductor light emitting device transfer device according to an embodiment can include a line beam laser generating device and a through-type glass mask disposed on a semiconductor substrate including a predetermined semiconductor light emitting device. The line beam laser 210 generated by the line beam laser generator can pass through the through-type glass mask to selectively transfer the semiconductor light emitting device on the semiconductor substrate onto a predetermined panel substrate.

Abstract: A multilayered-reflective-film-provided substrate includes: a substrate; a multilayered reflective film provided on the substrate; and a protective film provided on the multilayered reflective film, in which the protective film includes ruthenium (Ru) and at least one additive material selected from aluminum (Al), yttrium (Y), zirconium (Zr), rhodium (Rh), and hafnium (Hf), and a content of the additive material is 5% or more by atom and less than 50% by atom.

Abstract: A foreign object height measurement method including: storing in advance dependence data indicating a dependence of a calculated value of the height of the foreign object calculated from a foreign object image extracted from the charged particle image on an orientation of the foreign object; extracting a measurement target foreign object image, being an image of a measurement target foreign object, from the charged particle image; and outputting a measurement value of a height of the measurement target foreign object along with a warning regarding reliability or measuring the height of the measurement target foreign object from a charged particle image acquired by rotating the sample stage and changing an orientation of the measurement target foreign object detected from the measurement target foreign object image when it is determined that the orientation of the measurement target foreign object does not satisfy an acceptable error range based on the dependence data.

Abstract: This disclosure describes systems, methods, and devices related to optical proximity corrections to an integrated circuit photomask. A method may include identifying a first contour of a first adjacent polygon of a photomask predicted for a first polygon of an integrated circuit, the first contour excluding a first corner formed by a first edge and a second edge of the first polygon; identifying a second contour of a second adjacent polygon of a photomask predicted for a second polygon of the integrated circuit, the second contour excluding a second corner formed by a third edge and a fourth edge of the second polygon; generating a fast contour prediction based on corner rounding associated with the first contour and the second contour; and generating, based on the fast contour prediction, a minimum distance between the first contour and the second contour, the minimum distance associated with the optical proximity corrections.

Abstract: A method for fabricating a photomask layout is provided. The method includes: receiving a first layout including a main pattern; generating a second layout by generating an assist feature in consideration of optical properties of the main pattern in the first layout; generating a third layout by performing optical proximity correction (OPC) on a second layout; and outputting the third layout to a corrected layout when the assist feature is not generated on an ACI image of a semiconductor film etched by using a photomask generated using the third layout, as an etching mask.

Abstract: A pellicle membrane for a lithographic apparatus, the membrane including uncapped carbon nanotubes. A method of regenerating a pellicle membrane, the method including decomposing a precursor compound and depositing at least some of the products of decomposition onto the pellicle membrane. A method of reducing the etch rate of a pellicle membrane, the method including providing an electric field in the region of the pellicle membrane to redirect ions from the pellicle, or heating elements to desorb radicals from the pellicle, preferably wherein the pellicle membrane is a carbon nanotube pellicle membrane. An assembly for a lithographic apparatus, the assembly including a biased electrode near or including the pellicle membrane or heating means for the pellicle membrane.

Abstract: A lithographic process for the production of a semiconductor device has recently caused a problem in terms of generation of a sublime component (sublimate) derived from a low-molecular-weight compound (e.g., polymer resin, crosslinking agent, or crosslinking catalyst) during baking upon formation of a resist underlayer film from a resist underlayer film-forming composition. The resist underlayer film-forming composition of the present invention uses an organic acid having a fluoroalkyl group or an organic acid salt having a fluoroalkyl group, as a crosslinking catalyst, and thus the resist underlayer film-forming composition containing the crosslinking catalyst can effectively prevent generation of a sublimate derived from a low-molecular-weight component contained in the resist underlayer film during formation of the film.

Abstract: Embodiments of the present disclosure relate to methods, systems and apparatus for improving dose uniformity of the photolithography system. The method includes projecting a write beam from a projection unit toward a mask to form a plurality of incident lights, adjusting the projection unit to create a distribution of incidence angles corresponding to the incident lights, focusing the plurality of incident lights toward a photoresist layer disposed over a substrate with a lens, removing portions of the photoresist layer to form the device pattern, and forming structures on the substrate corresponding to the device pattern. The mask has a mask pattern corresponding to a device pattern. By focusing the plurality of incident lights towards the photoresist, a swing curve of the incident lights interfere to reduce a total swing curve of the incident lights to develop a photoresist layer with a photoresist pattern corresponding to the device pattern.

Abstract: A method of manufacturing a photomask including the steps of providing a photomask blank, inspecting the photomask blank to determine presence of one or more defects in the photomask blank, wherein the one or more defects comprise one or more photomask substrate defects, and compensating for the one or more photomask substrate defects by roughening one or more surface portions of the photomask substrate.

Abstract: An optical proximity correction (OPC) method for manufacturing a semiconductor chip including detecting edges of an initial layout pattern and determining an edge violating a mask rule, among the edges, as a target edge, setting a reference control point (RCP) on the target edge, forming a multi-edge by dividing the target edge based on the RCP, setting additional control points on the multi-edge, forming a modified layout pattern by transforming the multi-edge into a curved edge based on the RCP and the additional control points, performing an OPC simulation based on the modified layout pattern, and calculating an edge placement error (EPE) of the modified layout pattern based on a result of the OPC simulation may be provided.

Abstract: A micro-lens based module including at least one nanostructured layer, the nanostructured layer including one or several diffractive domains corresponding to an optical object. The claimed micro-lens based module allows dynamic and/or coloured projections of optical objects with an improved optical quality. The present invention also relates to a projection device and a method of projection of improved coloured and/or dynamic images.

Abstract: Provided is a pellicle, including a frame on which a pellicle film is placed and a mask adhesive layer which is placed on the frame, wherein when an attachment portion S1 of the adhesive layer to a quartz mask is irradiated with xenon (Xe) excimer lamp light from a back surface of the mask for 2 minutes and the pellicle is then peeled off, a residual ratio (residual area of the adhesive layer on a quartz mask/area of the attachment portion S1 of the adhesive layer) of the adhesive layer is 0.001 to 5.0%.

Abstract: A target processing method includes: importing a target into a processing chamber; forming a film including carbon on the target using at least one of first ion including carbon and a first plasma including carbon; and removing the film by a reaction between a second plasma and the film, wherein the forming of the film and the removing of the film are alternately performed a number of times in the processing chamber without removing the target from the processing chamber.

Abstract: There is provided an EUV transmissive membrane having an EUV transmittance of 80.0% or more at a wavelength of 13.5 nm and including a main layer having an IR emissivity of 2.0% or more at a wavelength of 2 ?m and a protective layer that covers at least one side of the main layer and has an IR transmittance of 70% or more at a wavelength of 2 ?m.

Abstract: Embodiments of the present disclosure herein include a method of removing a contamination material from an optical device. The method may include disposing an optical device in a process chamber, the optical device having optical device structures formed in a substrate, the contamination material is disposed at least on sidewalls of the optical device structures and within trenches between the optical device structures, and exposing the optical device to a plasma generated in the process chamber, the plasma generated from oxygen gas (O2), chlorine gas (Cl2), Argon (Ar), or a combination thereof, the exposing the optical device to the plasma removes the contamination material.

Abstract: A pellicle for an EUV photo mask includes a membrane attached to a frame. The membrane includes nanotubes, Ru—O—X catalyst structures partially covering a surface of each nanotube, and a protection layer to cover the Ru—O—X catalyst structures and the surface of each nanotube. X is a metal element of Mo, Ti, Zr or Nb. The Ru—O—X catalyst structures include first nano-particles of a X-containing material formed on the surface of each nanotube, and second nano-particles of a Ru-containing material formed on the first nano-particles, thereby forming catalysts or catalyst bridges. The pellicle advantageously has high EUV light transmittance and improved endurance against attacking particles (such as hydrogen particles), thereby having prolonged lifetime.

Abstract: In a method of manufacturing a photo mask, an etching mask layer having circuit patterns is formed over a target layer of the photo mask to be etched. The photo mask includes a backside conductive layer. The target layer is etched by plasma etching, while preventing active species of plasma from attacking the backside conductive layer.

Abstract: In a mask review method, a vacuum is drawn in a vacuum chamber that contains an extreme ultraviolet (EUV) actinic mask review system including an EUV illuminator, a mask stage, a projection optics box, and an EUV imaging sensor. With the vacuum drawn, a position is adjusted of at least one component of the EUV actinic mask review system. After the adjusting and with the vacuum drawn, an actinic image is acquired of an EUV mask mounted on the mask stage using the EUV imaging sensor. The acquiring includes transmitting EUV light from the EUV illuminator onto the EUV mask and projecting at least a portion of the EUV light reflected by the EUV mask onto the EUV imaging sensor using the projection optics box.

Abstract: A method for source mask optimization to increase scanner throughput for a patterning process is described. The method includes computing a multi-variable cost function of design variables that are representative of characteristics of the patterning process. The design variables may include (a) an illumination variable that is characteristic of an illumination system, and (b) a design layout variable that is characteristic of a design layout. The multi-variable cost function may be a function of a throughput of the patterning process. The method further includes reconfiguring the characteristics of the patterning process by adjusting the design variables until a predefined termination condition is satisfied.

Abstract: Some embodiments provide a method for optimizing a mask layout generated from a design layout of an IC. Based on an initial mask layout for a first layer, the method generates a simulated wafer image including shapes representing components of the first layer, including a first component that overlaps with a second component on a second layer. The method identifies a more critical first region and a less critical second region of a first shape of the first component that both overlap with a second shape of the second component. The more critical first region is more important to ensuring overlap of the first shape with the second shape. To improve overlap between the first and second shapes, the method uses different costs for the more critical first region and the less critical second region to modify the initial mask layout to produce a modified mask layout.

Abstract: The present disclosure provides a method of manufacturing a semiconductor structure. The method includes several operations. A substrate including a device region and a scribe line region is provided. A first layer is formed over the substrate. A first photoluminescent layer is formed over the first layer in the scribe line region. The first layer and the first photoluminescent layer are patterned to form a first pattern in the scribe line region. A first patterned mask layer is formed over a second layer. An alignment of the first patterned mask layer and the first pattern is detected. A pattern of the first patterned mask layer is transferred to the second layer to form a second pattern in the scribe line region.

Abstract: A method of fabricating a mask is provided. The method includes providing a hard mask layer disposed on top of absorber, a capping layer, and a multilayer that are disposed on a substrate. The method includes forming a middle layer over the hard mask layer, forming a photo resist layer over the middle layer, patterning the photo resist layer, etching the middle layer through the patterned photo resist layer, etching the hard mask layer through the patterned middle layer, and etching the absorber through the patterned hard mask layer. In some embodiments, etching the hard mask layer through the patterned middle layer includes a dry-etching process that has a first removal rate of the hard mask layer and a second removal rate of the middle layer, and a ratio of the first removal rate of the hard mask layer to the second removal rate of the middle layer is greater than 5.

Abstract: According to one embodiment, a manufacturing method of a display device includes forming a first conductive oxide layer, forming a first metal layer at a first pressure, forming a second metal layer at a second pressure, forming a second conductive oxide layer, forming a resist having a predetermined shape, etching the second conductive oxide layer using the resist as a mask, retracting an end portion of the second metal layer relative to an end portion of the second conductive oxide layer and an edge of a lower surface of the first metal layer by etching the second metal layer and the first metal layer using the resist as a mask, etching the first conductive oxide layer using the resist as a mask, and removing the resist.

Abstract: A color conversion substrate includes an upper substrate including a first area and a second area adjacent to the first area and a first color filter, a second color filter, and a third color filter which are disposed on the upper substrate and in the first area and the second area, and an opening corresponding to the first color filter is defined by a one of the second color filter and the third color filter having a smaller stitch error between the first area and the second area.

Abstract: The inventive concept provides a liquid supply unit which may implement a rotation (swing) of a plurality of nozzles by a single motor, and which has simple structure. The liquid supply unit includes a first nozzle, a second nozzle, a motor, and a first belt. The first nozzle includes a first supply pipe for supplying a liquid, a first rotation part provided at a bottom part of the first supply pipe, and a first electromagnetic clutch provided at a bottom part of the first rotation part. The second nozzle includes a second supply pipe for supplying a liquid, a second rotation part provided at a bottom part of the second supply pipe, and a second electromagnetic clutch provided at a bottom part of the second rotation part. The motor provides a rotation force to the first electromagnetic clutch. The first belt which interlocks a rotation of the first electromagnetic clutch and the second electromagnetic clutch.

Abstract: The present invention relates to a method of high-speed recording and reading data on or in a layer (10) of a first material and to a device for high-speed recording and reading data on or in a layer (10) of a first material using a laser source (19, a galvanometer (4) and a digital micromirror (5) adapted to emit multiple laser beams.

Abstract: A method of forming a pattern of a semiconductor device includes: preparing a semiconductor substrate including a cell region and an outer region; applying a photoresist on the semiconductor substrate; irradiating extreme ultraviolet (EUV) light reflected from an EUV mask, onto the photoresist; forming a photoresist pattern in the cell region and the outer region; and etching the semiconductor substrate, using the photoresist pattern as an etch mask. The EUV mask includes: a plurality of main patterns in a first zone, of the EUV mask, corresponding to the cell region; and a first lane and a second lane in a second zone, of the EUV mask, corresponding to the outer region, wherein the first lane and the second lane surround the plurality of main patterns, wherein the first lane has a line-and-space pattern, and the second lane has a protruding pattern.

Abstract: An electrostatic adsorption tool includes an electrostatic adsorption power generation member in which an electrode element group is embedded. The electrostatic adsorption power generation member electrostatically adsorbs a thin object by applying voltage to the electrode element group. The electrostatic adsorption power generation member includes, at least on an adsorption surface that adsorbs the thin object, a first water repellent insulation layer made of a water repellent material.

Abstract: A method of forming a resist pattern includes applying a photoresist to first and second regions of a processing target to form a resist layer. The processing target includes a stacked body of alternately stacked first and second layers. The first region includes an upper surface of the stacked body, and the second region includes a recess extending into the stacked body from the upper surface. The resist layer is then patterned with light passed through a multi-gradation mask including a partial translucent feature at an outer perimeter of the recess, a light shielding feature corresponding in position to the recess, and a translucent feature surrounding the partial translucent feature. A resist pattern is formed including an overhang portion extending above a portion of the recess.

Abstract: A roll-to-plate process for texturing or patterning discrete substrates, such as displays, lighting or solar panels comprising the steps of supplying an imprinting lacquer, texturing or patterning the imprinting lacquer with an imprint texture which imprint texture is formed by openings and elevations thus creating volumes in the imprint texture to obtain an imprinted lacquer and optionally followed by curing the imprinted lacquer to obtain a solidified textured or patterned layer, characterized in that the texturing or patterning is performed with an imprint texture that comprises domains of greater volumes at its edges, and with a flexible stamp with a Young's Modulus of between 0.1 Giga Pascal (GPa) and 10 Giga Pascal (GPa).

Abstract: The present disclosure provides a photomask, including a plurality of pattern areas, each of the pattern areas is defined by a respective boundary, a first pattern area including a first mask feature, and a training area adjacent to a boundary of the pattern area, the training area comprising a first training feature, wherein the first training feature is comparable to the first mask feature.

Abstract: A method includes forming a reflective multilayer over a substrate; depositing a first capping layer over the reflective multilayer, wherein the first capping layer is made of a ruthenium-containing material or a chromium-containing material; performing a treatment to the first capping layer to introduce nitrogen or fluorine into the first capping layer; forming an absorption layer over the first capping layer; and patterning the absorption layer.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes: providing a substrate; forming a plurality of first mask layers over the substrate, wherein each of the first mask layers extends along a first direction; forming a plurality of second mask layers over the substrate, wherein each of the second mask layers extends along a second direction different from the first direction; patterning the plurality of second mask layers to form a cut pattern; forming a first aperture modification layer on the cut pattern to define a plurality of first openings overlapping the plurality of first mask layers along a third direction substantially orthogonal to the first direction and the second direction; patterning the plurality of first mask layers to form an active region definition pattern; and patterning the substrate to define an active region by the active region definition pattern.