Abstract: In a mask review method, a vacuum is drawn in a vacuum chamber that contains an extreme ultraviolet (EUV) actinic mask review system including an EUV illuminator, a mask stage, a projection optics box, and an EUV imaging sensor. With the vacuum drawn, a position is adjusted of at least one component of the EUV actinic mask review system. After the adjusting and with the vacuum drawn, an actinic image is acquired of an EUV mask mounted on the mask stage using the EUV imaging sensor. The acquiring includes transmitting EUV light from the EUV illuminator onto the EUV mask and projecting at least a portion of the EUV light reflected by the EUV mask onto the EUV imaging sensor using the projection optics box.

Abstract: A method for source mask optimization to increase scanner throughput for a patterning process is described. The method includes computing a multi-variable cost function of design variables that are representative of characteristics of the patterning process. The design variables may include (a) an illumination variable that is characteristic of an illumination system, and (b) a design layout variable that is characteristic of a design layout. The multi-variable cost function may be a function of a throughput of the patterning process. The method further includes reconfiguring the characteristics of the patterning process by adjusting the design variables until a predefined termination condition is satisfied.

Abstract: In a method of manufacturing a photo mask, an etching mask layer having circuit patterns is formed over a target layer of the photo mask to be etched. The photo mask includes a backside conductive layer. The target layer is etched by plasma etching, while preventing active species of plasma from attacking the backside conductive layer.

Abstract: Some embodiments provide a method for optimizing a mask layout generated from a design layout of an IC. Based on an initial mask layout for a first layer, the method generates a simulated wafer image including shapes representing components of the first layer, including a first component that overlaps with a second component on a second layer. The method identifies a more critical first region and a less critical second region of a first shape of the first component that both overlap with a second shape of the second component. The more critical first region is more important to ensuring overlap of the first shape with the second shape. To improve overlap between the first and second shapes, the method uses different costs for the more critical first region and the less critical second region to modify the initial mask layout to produce a modified mask layout.

Abstract: The present disclosure provides a method of manufacturing a semiconductor structure. The method includes several operations. A substrate including a device region and a scribe line region is provided. A first layer is formed over the substrate. A first photoluminescent layer is formed over the first layer in the scribe line region. The first layer and the first photoluminescent layer are patterned to form a first pattern in the scribe line region. A first patterned mask layer is formed over a second layer. An alignment of the first patterned mask layer and the first pattern is detected. A pattern of the first patterned mask layer is transferred to the second layer to form a second pattern in the scribe line region.

Abstract: A method of fabricating a mask is provided. The method includes providing a hard mask layer disposed on top of absorber, a capping layer, and a multilayer that are disposed on a substrate. The method includes forming a middle layer over the hard mask layer, forming a photo resist layer over the middle layer, patterning the photo resist layer, etching the middle layer through the patterned photo resist layer, etching the hard mask layer through the patterned middle layer, and etching the absorber through the patterned hard mask layer. In some embodiments, etching the hard mask layer through the patterned middle layer includes a dry-etching process that has a first removal rate of the hard mask layer and a second removal rate of the middle layer, and a ratio of the first removal rate of the hard mask layer to the second removal rate of the middle layer is greater than 5.

Abstract: According to one embodiment, a manufacturing method of a display device includes forming a first conductive oxide layer, forming a first metal layer at a first pressure, forming a second metal layer at a second pressure, forming a second conductive oxide layer, forming a resist having a predetermined shape, etching the second conductive oxide layer using the resist as a mask, retracting an end portion of the second metal layer relative to an end portion of the second conductive oxide layer and an edge of a lower surface of the first metal layer by etching the second metal layer and the first metal layer using the resist as a mask, etching the first conductive oxide layer using the resist as a mask, and removing the resist.

Abstract: A color conversion substrate includes an upper substrate including a first area and a second area adjacent to the first area and a first color filter, a second color filter, and a third color filter which are disposed on the upper substrate and in the first area and the second area, and an opening corresponding to the first color filter is defined by a one of the second color filter and the third color filter having a smaller stitch error between the first area and the second area.

Abstract: The inventive concept provides a liquid supply unit which may implement a rotation (swing) of a plurality of nozzles by a single motor, and which has simple structure. The liquid supply unit includes a first nozzle, a second nozzle, a motor, and a first belt. The first nozzle includes a first supply pipe for supplying a liquid, a first rotation part provided at a bottom part of the first supply pipe, and a first electromagnetic clutch provided at a bottom part of the first rotation part. The second nozzle includes a second supply pipe for supplying a liquid, a second rotation part provided at a bottom part of the second supply pipe, and a second electromagnetic clutch provided at a bottom part of the second rotation part. The motor provides a rotation force to the first electromagnetic clutch. The first belt which interlocks a rotation of the first electromagnetic clutch and the second electromagnetic clutch.

Abstract: The present invention relates to a method of high-speed recording and reading data on or in a layer (10) of a first material and to a device for high-speed recording and reading data on or in a layer (10) of a first material using a laser source (19, a galvanometer (4) and a digital micromirror (5) adapted to emit multiple laser beams.

Abstract: A method of forming a pattern of a semiconductor device includes: preparing a semiconductor substrate including a cell region and an outer region; applying a photoresist on the semiconductor substrate; irradiating extreme ultraviolet (EUV) light reflected from an EUV mask, onto the photoresist; forming a photoresist pattern in the cell region and the outer region; and etching the semiconductor substrate, using the photoresist pattern as an etch mask. The EUV mask includes: a plurality of main patterns in a first zone, of the EUV mask, corresponding to the cell region; and a first lane and a second lane in a second zone, of the EUV mask, corresponding to the outer region, wherein the first lane and the second lane surround the plurality of main patterns, wherein the first lane has a line-and-space pattern, and the second lane has a protruding pattern.

Abstract: An electrostatic adsorption tool includes an electrostatic adsorption power generation member in which an electrode element group is embedded. The electrostatic adsorption power generation member electrostatically adsorbs a thin object by applying voltage to the electrode element group. The electrostatic adsorption power generation member includes, at least on an adsorption surface that adsorbs the thin object, a first water repellent insulation layer made of a water repellent material.

Abstract: A method of forming a resist pattern includes applying a photoresist to first and second regions of a processing target to form a resist layer. The processing target includes a stacked body of alternately stacked first and second layers. The first region includes an upper surface of the stacked body, and the second region includes a recess extending into the stacked body from the upper surface. The resist layer is then patterned with light passed through a multi-gradation mask including a partial translucent feature at an outer perimeter of the recess, a light shielding feature corresponding in position to the recess, and a translucent feature surrounding the partial translucent feature. A resist pattern is formed including an overhang portion extending above a portion of the recess.

Abstract: A roll-to-plate process for texturing or patterning discrete substrates, such as displays, lighting or solar panels comprising the steps of supplying an imprinting lacquer, texturing or patterning the imprinting lacquer with an imprint texture which imprint texture is formed by openings and elevations thus creating volumes in the imprint texture to obtain an imprinted lacquer and optionally followed by curing the imprinted lacquer to obtain a solidified textured or patterned layer, characterized in that the texturing or patterning is performed with an imprint texture that comprises domains of greater volumes at its edges, and with a flexible stamp with a Young's Modulus of between 0.1 Giga Pascal (GPa) and 10 Giga Pascal (GPa).

Abstract: The present disclosure provides a photomask, including a plurality of pattern areas, each of the pattern areas is defined by a respective boundary, a first pattern area including a first mask feature, and a training area adjacent to a boundary of the pattern area, the training area comprising a first training feature, wherein the first training feature is comparable to the first mask feature.

Abstract: A method includes forming a reflective multilayer over a substrate; depositing a first capping layer over the reflective multilayer, wherein the first capping layer is made of a ruthenium-containing material or a chromium-containing material; performing a treatment to the first capping layer to introduce nitrogen or fluorine into the first capping layer; forming an absorption layer over the first capping layer; and patterning the absorption layer.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes: providing a substrate; forming a plurality of first mask layers over the substrate, wherein each of the first mask layers extends along a first direction; forming a plurality of second mask layers over the substrate, wherein each of the second mask layers extends along a second direction different from the first direction; patterning the plurality of second mask layers to form a cut pattern; forming a first aperture modification layer on the cut pattern to define a plurality of first openings overlapping the plurality of first mask layers along a third direction substantially orthogonal to the first direction and the second direction; patterning the plurality of first mask layers to form an active region definition pattern; and patterning the substrate to define an active region by the active region definition pattern.

Abstract: An embodiment etching tool includes an etch chamber for plasma etching a first wafer to be processed; a transfer chamber coupled to the etch chamber; a first run path between the transfer chamber and the etch chamber, the first run path including a path for moving the first wafer to be processed from the transfer chamber to the etch chamber, where the etching tool is configured to dry develop the first wafer to be processed before etching a hard mask on the first wafer in the etch chamber.

Abstract: There is provided an EUV transmissive membrane including: a main layer composed of metallic beryllium that has a first surface and a second surface; and a pair of surface layers provided on the first surface and the second surface of the main layer, each containing at least one fluoride selected from beryllium fluoride, beryllium fluoride nitride, beryllium fluoride oxide, and beryllium fluoride nitride oxide.

Abstract: In an inspection device, a classification means classifies temporal captured images which capture a target object, into a plurality of groups. A recognition means recognizes the captured images belonging to each of the groups, and outputs a determination result for each of the groups. An integration means integrates respective determination results of the groups, and outputs a final determination result.

Abstract: A method of fabricating a mask by performing optical proximity correction (OPC) is provided. The method of fabricating a mask includes generating a target curve by using bias control points, extracting a first contour of an initial design mask by performing an OPC process, generating a first updated design mask, which is obtained by updating the initial design mask, by using the first contour and the target curve, extracting a second contour of the first updated design mask by performing the OPC process, and generating a second updated design mask by using the second contour and the target curve.

Abstract: A method includes: depositing a mask layer over a substrate; directing radiation reflected from a collector of a lithography system toward the mask layer according to a pattern; blocking a portion of the radiation by a blocking structure, the blocking structure being attached to a reflector of the lithography system; forming openings in the mask layer by removing regions of the mask layer exposed to the radiation; and removing material of a layer underlying the mask layer exposed by the openings.

Abstract: An optical device is fabricated with a higher resolution of features in a patterned lattice. A photoresist is applied to a device layer for the optical device. Several photomasks offset from one another are used in different exposure steps to expose the photoresist with features. The features in each exposure can have different characteristic dimensions, such as different diameters for posts or holes to be produced in the device layer. Once the exposures are complete, the patterned lattice of the features are produced in the device layer. For example, the photoresist is developed, and reactive ion etching is used to produce the features in the device layer.

Abstract: A substrate with a conductive film for manufacturing a reflective mask, the substrate comprising a conductive film having excellent chemical resistance and a small surface roughness (Rms), is obtained. A substrate with a conductive film comprises a conductive film on one of two main surfaces of the substrate. The conductive film comprises chromium. The conductive film comprises a structure in which a lower layer and an upper layer are layered in this order from the substrate side. The lower layer is amorphous. The upper layer has a crystallinity.

Abstract: A mirror module includes a pair of deflecting mirrors which deflect a transmission wave and a reflected wave in a direction in accordance with a rotation angle of a reflecting surface and rotates in accordance with drive of a motor. A dividing plate divides the pair of deflecting mirrors into two portions of a transmission deflecting portion and a reception deflecting portion. Each of the pair of deflecting mirrors includes shielding portions through which passage of the transmission waves is suppressed on at least one of a side surface closer to a transmissive window in a state where the reflecting surface faces the transmitting portion out of both side surfaces located across a rotational axis at the transmission reflecting portion or a side surface farther from the transmissive window in a state where the reflecting surface faces the receiving portion out of both side surfaces located across the rotational axis at the reception deflecting portion.

Abstract: To ascertain an image of an object which emerges when the object is illuminated with illumination light from a partly coherent light source with a target illumination setting having an illumination-side numerical aperture NA_illu and an imaging-side numerical aperture NA_detection, the following procedure is performed: initially, a section of the object is illuminated with illumination light from a coherent measurement light source with an illumination setting having an illumination-side numerical aperture NA_i, which is at least as large as NA_detection. Then, a diffraction image of the illuminated section is recorded. This is implemented by way of a spatially resolved detection in a far field detection plane of a diffraction intensity of illumination light diffracted by the illuminated section with a recording-side numerical aperture NA by way of a plurality of sensor pixels. This recording-side aperture must be greater than or equal to the maximum of NA_illu and NA_detection.

Abstract: A technique that can achieve a pellicle film made of carbon nanotubes and having high in-plane transmittance uniformity. The pellicle film contains a plurality of first carbon nanotubes extending in a first direction and arrayed in the radial direction, and a plurality of second carbon nanotubes extending in a second direction intersecting the first direction, and arrayed in their radial direction.

Abstract: An exposure mask includes a base layer including a first area and a second area spaced apart from a first area in a first direction, a first inspection transmission pattern defined in a first area of a base layer and arranged in a ring shape having at least one connection part in plan view, and a second inspection transmission pattern defined in a second area of a base layer and arranged in a polygonal shape or a circular shape in plan view.

Abstract: A EUV lithography mask includes a substrate of a low thermal expansion material, a first reflective multilayer over the substrate, and a patterned reflective multilayer over the first reflective multilayer. The patterned reflective multilayer includes trenches through the patterned reflective multilayer. Each of the first reflective multilayer and the patterned reflective multilayer includes a stack of film pairs.

Abstract: Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film and a phase shift film which are sequentially formed on a substrate. The phase shift film includes a first layer containing niobium (Nb) and chrome (Cr), and a second layer containing tantalum (Ta) and silicon (Si). In the first layer, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) content ranges from 10 to 40 at %. The blankmask can implement an excellent resolution and NILS, and implement a low DtC.

Abstract: A method for setting at least one side wall angle of at least one pattern element of a photolithographic mask including the steps of: (a) providing at least one precursor gas; (b) providing at least one massive particle beam which induces a local chemical reaction of the at least one precursor gas; and (c) altering at least one parameter of the particle beam and/or a process parameter during the local chemical reaction in order to set the at least one side wall angle of the at least one pattern element.

Abstract: A photomask includes a substrate, an opaque filling formed embedded in the substrate, and an opaque main feature over the substrate. The opaque filling has a first width. The opaque main has a second width greater than the first width of the opaque filling. The opaque filling and the opaque main feature comprise same material.

Abstract: A lithographic apparatus includes an illumination system to illuminate a pattern of a patterning device, a projection system to project an image of the pattern onto a substrate, a movable stage to support the patterning device or the substrate, a slotted object, and a locking device (700) to prevent a motion of the movable stage. The locking device comprises an actuator (702) and a wheel device (704) comprising a ring feature (708) and coupled to the actuator. The actuator rotates the wheel device about a rotation axis (706). The ring feature has a width (710) defined parallel to the rotation axis. The width is variable with respect to azimuthal direction of the wheel device. The ring feature engages a slot of the slotted object. The rotating adjusts the width of the ring feature within the slot such that a relative motion between the device and the slotted object is prevented.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a resin having a polarity that increases by an action of an acid, and (B) a compound that generates an acid upon irradiation with actinic rays or radiation, represented by a specific general formula, is which the resin (A) includes a repeating unit represented by a specific general formula; and an actinic ray-sensitive or radiation-sensitive film formed of the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method, and a method for manufacturing an electronic device.

Abstract: A laminate for a blank mask includes a light-transmitting layer; a phase shift film disposed on the light-transmitting layer; and residual ions measured from a surface of the phase shift film through ion chromatography comprises at least one of sulfate ions in a concentration of 0 ng/cm2 to 0.05 ng/cm2, nitric oxide ions in a concentration of 0 ng/cm2 to 0.5 ng/cm2, or ammonium ions in a concentration of 0 ng/cm2 to 5 ng/cm2, or any combination thereof. A sum of concentrations of the residual ions is more than 0.

Abstract: An extreme ultraviolet lithography (EUVL) method includes providing at least two phase-shifting mask areas having a same pattern. A resist layer is formed over a substrate. An optimum exposure dose of the resist layer is determined, and a latent image is formed on a same area of the resist layer by a multiple exposure process. The multiple exposure process includes a plurality of exposure processes and each of the plurality of exposure processes uses a different phase-shifting mask area from the at least two phase-shifting mask areas having a same pattern.

Abstract: Provided is a reflective mask blank. The reflective mask blank has a multilayer reflective film and a thin film for pattern formation in this order on a main surface of a substrate; the thin film consists of a single layer structure consisting of a ruthenium-containing layer at least containing ruthenium, nitrogen, and oxygen or a multilayer structure including the ruthenium-containing layer; and when the ruthenium-containing layer is subjected to an analysis by an In-Plane measurement of an X-ray diffraction method to obtain an X-ray diffraction profile where, provided I_P1 is the maximum value of diffraction intensity within a diffraction angle 2? ranging from 65 degrees to 75 degrees and I_avg is the average value of diffraction intensity within a diffraction angle 2? ranging from 55 degrees to 65 degrees, I_P1/I_avg is greater than 1.0 and less than 3.0.

Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a multi-layer patterned absorber layer on the reflective multilayer stack is provided. Disclosed embodiments include an absorber layer that includes an alloy comprising ruthenium (Ru), chromium (Cr), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), tungsten (W) or palladium (Pd), and at least one alloying element. The at least one alloying element includes ruthenium (Ru), chromium (Cr), tantalum (Ta), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), hafnium (Hf), boron (B), nitrogen (N), silicon (Si), zirconium (Zr) or vanadium (V). Other embodiments include a multi-layer patterned absorber structure with layers that include an alloy and an alloying element, where at least two of the layers of the multi-layer structure have different compositions.

Abstract: There are provided a reflective mask blank in which a fine absorption film pattern is formed even when a high-absorbent material is used as an absorption film of an EUV mask, whereby the shadowing effect can be reduced and electron beam repair etching can be performed and a reflective mask blank for producing the same. A reflective mask blank (10) according to this embodiment includes: a substrate (1); a multi-layer reflective film (2) reflecting an EUV light having a multi-layer structure formed on the substrate (1); a capping layer (3) protecting the multi-layer reflective film (2) formed on the multi-layer reflective film (2); and an absorption film (4) absorbing the EUV light formed on the capping layer (3), in which the absorption film (4) contains 50% by atom or more of elements constituting at least one of tin oxide (SnO) and indium oxide (InO) and contains a material easy to be etched by a fluorine-based gas or a chlorine-based gas.

Abstract: A method for fabricating a semiconductor device is described that includes forming a base layer over a top layer of a substrate, the base layer includes a silicon based dielectric having a thickness less than or equal to 5 nm and greater than or equal to 0.5 nm; forming a photoresist layer over the base layer, the photoresist including a first side and an opposite second side; exposing a first portion of the photoresist layer to a pattern of extreme ultraviolet (EUV) radiation from the first side; exposing a second portion of the photoresist layer with a pattern of electron flux from the second side, the electron flux being directed into the photoresist layer from the base layer in response to the EUV radiation; developing the exposed photoresist layer to form a patterned photoresist layer; and transferring the pattern of the patterned photoresist layer to the base layer and the top layer.

Abstract: A method, a device and a computer program for repairing a defect of a mask for lithography, in particular an EUV mask, are described. A method of repairing a defect of a mask for lithography, in particular an EUV mask, comprises the following steps: (a.) carrying out a first repair step on the defect using a first repair dose, wherein the defect transitions from an initial topology to a first defect topology as a result; (b.) determining an influence of the first repair step on the topology of the defect; (c.) determining a second defect topology for the defect, which is intended to be achieved by way of a second repair step on the defect; and (d.) determining a second repair dose for the second repair step, at least in part on the basis of the determined influence of the first repair step on the topology of the defect and the second defect topology. The method may further comprise step (e.) of carrying out the second repair step using the second repair dose.

Abstract: A method of forming an optical structure in a semiconductor substrate includes applying a layer of photoresist on a surface of the semiconductor substrate, exposing the photoresist with exposure light, and subsequently developing the photoresist. After developing, a remaining layer of the photoresist has a photoresist relief profile. The method further includes etching the photoresist and the semiconductor substrate to transfer the photoresist relief profile into the semiconductor substrate to obtain the optical structure in one or more first sub-areas and a support structure in one or more second sub-areas. A thickness of the layer of the photoresist applied to the surface of the semiconductor substrate is greater than a product of a maximum height difference of a relief profile of the optical structure and a ratio between etch rates of the photoresist and of the semiconductor substrate.

Abstract: Disclosed is a blank mask including a transparent substrate and a light shielding film disposed on the transparent substrate, wherein the light shielding film includes a transition metal and at least one selected from the group consisting of oxygen and nitrogen, wherein when a surface of the light shielding film includes nine sectors formed by trisecting the surface of the light shielding film vertically and horizontally, each of the nine sectors has a Rsk value, respectively, and an average value of the Rsk values of the nine sectors is equal to ?0.64 or more and less than or equal to 0, where Rsk value is a height symmetry of the surface of the light shielding film measured in accordance with ISO_4287, and wherein an average value of Rku values, which are kurtosis of the surface of the light shielding film measured in accordance with ISO_4287, of the nine sectors is 3 or less.

Abstract: A display device includes a fingerprint sensor layer that receives light reflected by an external object; a substrate disposed on the fingerprint sensor layer; an optical pattern layer disposed on the substrate and that includes a light blocking portion and a light transmitting portion that passes through the light blocking portion in one direction; a first light transmitting layer with a first refractive index and that is disposed on the light blocking portion; a second light transmitting layer with a second refractive index different from the first refractive index and that is disposed on the first light transmitting layer; and a light emitting element layer disposed on the second light transmitting layer.

Abstract: A method of fabricating a semiconductor device includes providing a first substrate and forming a resist layer over the first substrate. In some embodiments, the method further includes performing an exposure process to the resist layer. The exposure process includes exposing the resist layer to a radiation source through an intervening mask. In some examples, the intervening mask includes a second substrate, a multi-layer structure formed over the second substrate, a capping layer formed over the multi-layer structure, and an absorber layer disposed over the capping layer. In some embodiments, the absorber layer includes a first main pattern area and an opening area spaced a distance from the first main pattern area. In various examples, the method further includes, after performing the exposure process, developing the exposed resist layer to form a patterned resist layer.

Abstract: An apparatus for processing a substrate includes: a chamber having a gas inlet and a gas outlet; a substrate support disposed in the chamber; a plasma generator; and a controller programmed to: (a) place a substrate on the substrate support, the substrate having a pattern, (b) supply a first reactive species into the chamber to adsorb the first reactive species onto the pattern of the substrate, (c) partially purge the first reactive species from the chamber to adjust an amount of a residual first reactive species in the chamber, (d) supply a second reactive species into the chamber, and (e) expose the substrate to a plasma generated from the residual first reactive species and the second reactive species by the plasma generator to form a film on the pattern of the substrate.

Abstract: A projection exposure apparatus includes a mask mark illumination light source irradiating a mask mark with exposure light itself or a first alignment light having substantially the same wavelength as the exposure light, and an alignment unit having a work mark illumination light source irradiating a work mark with second alignment light having a wavelength different from the wavelength of the exposure light, an imaging device, and an imaging optical system. The imaging optical system includes a first dichroic prism for synthesizing the first alignment light and the light from the work mark and emitting the synthesized light toward the imaging device, and an optical path length changing optical system for splitting and merging the first alignment light, in which the optical positional relationships of the work mark and the image of the mask mark with respect to the imaging device are equivalent.

Abstract: A method of fabricating a semiconductor device includes providing a first substrate and forming a resist layer over the first substrate. In some embodiments, the method further includes performing an exposure process to the resist layer. The exposure process includes exposing the resist layer to a radiation source through an intervening mask. In some examples, the intervening mask includes a second substrate, a multi-layer structure formed over the second substrate, a capping layer formed over the multi-layer structure, and an absorber layer disposed over the capping layer. In some embodiments, the absorber layer includes a first main pattern area and an opening area spaced a distance from the first main pattern area. In various examples, the method further includes, after performing the exposure process, developing the exposed resist layer to form a patterned resist layer.

Abstract: A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection film 103 is previously formed below a resist film 104. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the anti-reflection film 103 facing a bottom of the recess pattern 110 of the resist film 104. Therefore, the metal component 105 can be suppressed from remaining at the bottom of the recess pattern 110. Therefore, when the SiO2 film 102 is subsequently etched using the pattern of the resist film 104, the etching is not hindered, so that defects such as bridges can be suppressed.

Abstract: This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.