Abstract: A method for mask data synthesis and mask making includes calibrating an optical proximity correction (OPC) model by adjusting a plurality of parameters including a first parameter and a second parameter, wherein the first parameter indicates a long-range effect caused by an electron-beam lithography tool for making a mask used to manufacture a structure, and the second parameter indicates a geometric feature of a structure or a manufacturing process to make the structure, generating a device layout, calculating a first grid pattern density map of the device layout, generating a long-range correction map, at least based on the calibrated OPC model and the first grid pattern density map of the device layout, and performing an OPC to generate a corrected mask layout, at least based on the generated long-range correction map and the calibrated OPC model.

Abstract: A silicon carbide wafer has one surface and the other surface opposite to the one surface. An average Rmax roughness of the one surface is 2.0 nm or less, and an average Ra roughness of the one surface is 0.1 nm or less. An edge region is a region in which a distance from an edge of the silicon carbide wafer toward a center is 5% to 75% of a radius of the silicon carbide wafer, and a central region is a region having a radius of 25% of the radius of the silicon carbide wafer at the center of the silicon carbide wafer. A difference between an average Rmax roughness of the edge region of the one surface and an average Rmax roughness of the central region of the one surface is 0.01 nm to 0.5 nm.

Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a capping layer on the reflective multilayer stack is provided. The reflective multilayer stack is treated prior to formation of the capping layer on the reflective multilayer stack. The capping layer is formed by an ion-assisted ion beam deposition or an ion-assisted sputtering process.

Abstract: With respect to a reflective mask blank for a reflective mask used in EUV lithography using EUV light, the reflective mask blank including a substrate, a multilayer reflection film having a periodically laminated structure in which low-refractive index layers composed of a material containing molybdenum and high-refractive index layers are alternately laminated, a protection film, and an absorber film is provided. The low-refractive index layer consists of one or more of first low-refractive index sublayers, and one or more of second low-refractive index sublayers that have a different composition from a composition of the first low-refractive index sublayer.

Abstract: A pellicle for an EUV photo mask includes a first layer; a second layer; and a main layer disposed between the first layer and second layer and including a plurality of nanotubes. At least one of the first layer or the second layer includes a two-dimensional material in which one or more two-dimensional layers are stacked. In one or more of the foregoing and following embodiments, the first layer includes a first two-dimensional material and the second layer includes a second two-dimensional material.

Abstract: A photomask protection device, a photomask protection system, and a use method of a photomask protection system are provided. The photomask protection device includes a frame and a pellicle. The frame is disposed on a substrate of a photomask and is provided with a clamping space. Edges of the pellicle are fixed in the clamping space.

Abstract: In a method of cleaning a photo mask, the photo mask is placed on a support such that a pattered surface faces down, and an adhesive sheet is applied to edges of a backside surface of the photo mask.

Abstract: A system receives a layout representation of a metasurface, the metasurface including a number of scatterers arranged in a spatial order, each scatterer having one of a number of geometries. The system identifies one or more consecutive ones of the scatterers in the spatial order. The system identifies a sequence representing consecutive ones of the geometries, the sequence being associated with one or more consecutive ones of the scatterers in the spatial order. The system associates a two-dimensional coordinate to the sequence, the two-dimensional coordinate corresponding to a position in the metasurface where the sequence starts. The system generates an output layout file including a reference to the sequence and the associated two-dimensional coordinate.

Abstract: A photolithography mask includes a substrate, a reflective multilayer structure over the substrate, an adhesion layer over the reflective multilayer structure, a capping layer over the adhesion layer, and a patterned absorber layer over the capping layer. The capping layer includes a non-crystalline conductive material.

Abstract: The present disclosure provides an apparatus for a semiconductor lithography process. The apparatus includes a mask defining a circuit pattern to be transferred. The apparatus further includes a pellicle including a pattern formed in a first surface, wherein the pellicle is attached to the mask at the first surface. The apparatus also includes an adhesive material layer disposed between the mask and the first surface. The pattern may include a plurality of capillaries. Each capillary of the plurality of capillaries may have a dimension in a plane of the first surface between about 1 ?m and about 500 ?m. Each capillary of the plurality of capillaries may have a ratio of depth to width greater than or equal to about 100. The adhesive material layer may include an adhesive having a glass transition temperature (Tg) greater than room temperature.

Abstract: A method includes: inspecting a reticle in a reticle pod, the reticle pod including a sealed space to accommodate the reticle, and the reticle pod further comprising a window arranged on an upper surface of the reticle pod, wherein the inspecting is performed through the window; and moving the reticle out of the reticle pod for performing a lithography operation using the reticle.

Abstract: Methods and systems for fracturing a pattern to be exposed on a surface using variable shaped beam (VSB) lithography include inputting an initial pattern; calculating a first substrate pattern from the initial pattern; overlaying the initial pattern with a two-dimensional grid, wherein an initial set of VSB shots are formed by a union of the initial pattern with locations on the grid; and merging two or more adjacent shots in the initial set of VSB shots to create a larger shot in a modified set of VSB shots; and outputting the modified set of VSB shots. The methods and systems also include calculating a calculated pattern to be exposed on the surface with the modified set of VSB shots; and calculating a second substrate pattern from the calculated pattern to be exposed on the surface.

Abstract: This application relates to a method for direct growth of multilayer graphene used as a core layer of a pellicle for extreme ultraviolet lithography. This application also relates to a method for manufacturing the pellicle for extreme ultraviolet lithography by using the multilayer graphene direct growth method. The multilayer graphene direct growth method may include forming few-layer graphene on a silicon nitride substrate, forming a metal catalyst layer on the few-layer graphene, and forming an amorphous carbon layer on the metal catalyst layer. The method may also include directly growing multilayer graphene from the few-layer graphene used as a seed layer by interlayer exchange between the metal catalyst layer and the amorphous carbon layer through heat treatment.

Abstract: The present disclosure provides a method for removing particles. The method includes: receiving a pellicle including a pellicle membrane, wherein a particle is disposed on the pellicle membrane; passing a light beam through an object lens, wherein the light beam is focused on a focal region in front of the pellicle membrane by the object lens, and the particle is attracted to be trapped at the focal region; and removing the particle from the pellicle membrane at the focal region.

Abstract: A portion of a buffer layer on a backside of a substrate of a photomask assembly may be removed prior to formation of one or more capping layers on the backside of the substrate. The one or more capping layers may be formed directly on the backside of the substrate where the buffer layer is removed from the substrate, and a hard mask layer may be formed directly on the one or more capping layers. The one or more capping layers may include a low-stress material to promote adhesion between the one or more capping layers and the substrate, and to reduce and/or minimize peeling and delamination of the capping layer(s) from the substrate. This may reduce the likelihood of damage to the pellicle layer and/or other components of the photomask assembly and/or may increase the yield of an exposure process in which the photomask assembly is used.

Abstract: A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer including molybdenum layers and silicon layers over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and performing a treatment to form a border region including molybdenum silicide in the reflective layer.

Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index n?1000-1100 nm of 5.300 or less and has an extinction coefficient k?1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index n?600-700 nm of 4.300 or less and has an extinction coefficient k?600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index n?400-500 nm of 2.500 or more and has an extinction coefficient k?400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.

Abstract: The present application discloses a method for fabricating a semiconductor device including: providing a photomask including an opaque layer on a mask substrate and surrounding a translucent layer on the mask substrate; forming a pre-process mask layer on a device stack; patterning the pre-process mask layer using the photomask to form a patterned mask layer including a mask region corresponding to the opaque layer, a trench region corresponding to the translucent layer, and a via hole corresponding to the mask opening of via feature; performing a damascene etching process to form a via opening and a trench opening in the device stack; and forming a via in the via opening and a trench in the trench opening. The translucent layer includes a mask opening of via feature which exposes a portion of the mask substrate. A thickness of the trench region is less than a thickness of the mask region.

Abstract: A reflective mask blank comprises a substrate; a multilayer reflective film which is formed on the substrate and reflects EUV light; and a layered film which is formed on the multilayer reflective film. The layered film has an absolute reflectance of 2.5% or less with respect to EUV light, and comprises a first layer and a second layer that is formed on the first layer; and the first layer comprises a phase shift film which shifts the phase of EUV light. Alternatively, the layered film is a phase shift film which comprises a first layer and a second layer that is formed on the first layer, and which shifts the phase of EUV light; and the first layer comprises an absorption layer that has an absolute reflectance of 2.5% or less with respect to EUV light.

Abstract: A reflective mask blank, which is a binary reflective mask blank, includes, in order: a substrate; a multilayer reflective film configured to reflect EUV light; and a pattern film. The pattern film has a laminated structure including a total of L layers each having a different refractive index where L is a natural number of 2 or more. When an absorption coefficient of an i-th layer in the pattern film from a side opposite to the substrate is defined as ki, a thickness of the i-th layer in the pattern film from the side opposite to the substrate is defined as di (nm), a total thickness of the pattern film is defined as d, an exposure wavelength is defined as ? (nm), and Pi is defined as 1?exp(?2?/?*diki), the following formula (1) is satisfied. ? i = 1 L ( P i / d ) > 0.

Abstract: A method of manufacturing an extreme ultraviolet mask, including forming a multilayer Mo/Si stack including alternating Mo and Si layers over a first major surface of a mask substrate, and forming a capping layer over the multilayer Mo/Si stack. An absorber layer is formed on the capping layer, and a hard mask layer is formed over the absorber layer. The hard mask layer is patterned to form a hard mask layer pattern. The hard mask layer pattern is extended into the absorber layer to expose the capping layer and form a mask pattern. A border pattern is formed around the mask pattern. The border pattern is extended through the multilayer Mo/Si stack to expose the mask substrate and form a trench surrounding the mask pattern. A passivation layer is formed along sidewalls of the trench.

Abstract: A reflective mask blank containing a substrate, a multilayer reflective film that reflects EUV light, and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, and the phase shift film being arranged in this order. The phase shift film contains a compound containing Ru and Cr, an element ratio between Cr and Ru (Cr:Ru) in the phase shift film is 5:95 to 42:58, and a melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy the following relation (1): 0.625MP1+MP2?1000??(1).

Abstract: A photosensitive resin composition containing (A) an acid-crosslinkable group-containing silicone resin, (B) a photo-acid generator, and (C) quantum dot particles. Thus, a photosensitive resin composition is capable of easily forming a film having favorable heat resistance, lithography resolution, and luminous properties; a photosensitive resin film and a photosensitive dry film are obtained by using the photosensitive resin composition; patterning processes use these; and a light emitting device is obtained by using the photosensitive resin composition.

Abstract: A method for correcting a mask patter includes: acquiring an initial pattern of a mask, the initial pattern including a scribe line area and die areas which are spaced, and the scribe line area is located between two adjacent die areas, each of the die areas includes at least one die sub-area and at least one first sub-test element group (TEG) area, and the scribe line area includes scribe line sub-areas and second sub-TEG areas, the first sub-TEG area and the second sub-TEG area are adjacent to each other, and the first sub-TEG area and the second sub-TEG area constitute a TEG area; performing an optical proximity correction (OPC) on an area of the initial pattern excluding TEG areas, so as to acquire a final pattern.

Abstract: A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10% and consists of a lower absorption layer and an upper absorption layer. A film thickness dbi of the absorbent layer satisfies a relationship of: dbi MAX?(i×6+1) nm?dbi?dbi MAX?(i×6?1) nm where the integer i is 0 or 1, and dbi MAX is represented by: d bi ? MAX ( nm ) = 13.53 2 ? n ? cos ? 6 ? ° { INT ( 0.58 1 - n 1 ) + 1 2 ? ? ? ( tan - 1 ( - k 2 1 - n 2 ) + 0.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The absorber layer includes one or more layers of an Jr based material, a Pt based material or a Ru based material.

Abstract: A method is used to generate a distortion model for a structured illumination microscopy (SIM) optical system. A sliding window is moved in relation to a plurality of images to define a plurality of sub-tiles. Each sub-tile represents a portion of the corresponding image. Parameters are estimated for each sub-tiles. The parameters include two or more parameters selected from the group consisting of modulation, angle, spacing, phase offset, and phase deviation. A full width at half maximum (FWHM) value associated with each sub-tile is estimated. A distortion model is estimated, based at least in part on a combination of the estimated parameters and FWHM values stored in the predetermined format and an estimated center window parameter. A two-dimensional image may be generated, based at least in part on the estimated distortion model. The two-dimensional image may include representations indicating where distortions occur in the optical system.

Abstract: A method (fabricating a fusible structure) includes forming a metal line that extends in a first direction, the forming a metal line including: configuring the mask such that the metal line has a first portion that is between a second portion and a third portion; and using an optical proximity correction technique with a mask so that the first portion has a first thickness that is thinner than a second thickness of each of the second portion and the third portion; and forming a first dummy structure proximal to the metal line and aligned with the first portion relative to the first direction.

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.

Abstract: Multi-layer photoresists, methods of forming the same, and methods of patterning a target layer using the same are disclosed. In an embodiment, a method includes depositing a reflective film stack over a target layer, the reflective film stack including alternating layers of a first material and a second material, the first material having a higher refractive index than the second material; depositing a photosensitive layer over the reflective film stack; patterning the photosensitive layer to form a first opening exposing the reflective film stack, patterning the photosensitive layer including exposing the photosensitive layer to a patterned energy source, the reflective film stack reflecting at least a portion of the patterned energy source to a backside of the photosensitive layer; patterning the reflective film stack through the first opening to form a second opening exposing the target layer; and patterning the target layer through the second opening.

Abstract: Antenna arrays to be used in MIMO apparatuses are disclosed. Such an antenna array may include a plurality of array elements, wherein every second element in a first direction is a digital pre-distortion-less linear element, and every second element in the first direction is a non-linear element. In the antenna array, spacing between adjacent elements in the first direction is less than a half of a free space wavelength. A non-linear precoding is applied to transmissions from the antenna array, the non-linear precoding converting out-of-band emissions of the transmissions into reactive power in the near-field around the antenna array while ensuring that in-band signals generated by the elements remain unaffected.

Abstract: Disclosed is a method for manufacturing ultra-thin glass. The method includes: patterning, on a mother glass substrate comprising a plurality of display cells and a dummy area surrounding the display cells, a cutting line having a shape corresponding to the display cells; forming a mother glass protective film on the mother glass substrate; forming a through-hole which corresponds to the cutting line by etching the mother glass substrate; and cutting bridges which are formed by the mother glass substrate and connect the through-holes.

Abstract: An optical proximity correction (OPC) method of effectively imitating a mask topography effect for a mask having a curvilinear pattern includes generating a library for edge filters of a near field by using an electromagnetic field simulation; generating an any-angle edge filter by using the library; for a mask having a curvilinear pattern, generating a first mask image by using thin mask approximation; determining whether the curvilinear pattern satisfies a reference; when the curvilinear pattern satisfies the reference, performing skewed Manhattanization on the curvilinear pattern and then generating a second mask image by applying the any-angle edge filter to edges of the curvilinear pattern.

Abstract: A reflective mask blank that is a material for a reflective mask used in EUV lithography using EUV light as exposure light, including a substrate, a multilayer reflection film that is formed on one main surface of the substrate and reflects the exposure light, and an absorber film containing tungsten, and another metal, a metalloid or a light element that is formed on the multilayer reflection film and absorbs the exposure light.

Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a multi-layer patterned absorber layer on the reflective multilayer stack is provided. Disclosed embodiments include an absorber layer that includes an alloy comprising ruthenium (Ru), chromium (Cr), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), tungsten (W) or palladium (Pd), and at least one alloying element. The at least one alloying element includes ruthenium (Ru), chromium (Cr), tantalum (Ta), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), hafnium (Hf), boron (B), nitrogen (N), silicon (Si), zirconium (Zr) or vanadium (V). Other embodiments include a multi-layer patterned absorber structure with layers that include an alloy and an alloying element, where at least two of the layers of the multi-layer structure have different compositions.

Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.

Abstract: A pellicle for an EUV photo mask includes a first capping layer, a matrix layer disposed over the first capping layer, a second capping layer disposed over the matrix layer; and a metallic layer disposed over the second capping layer.

Abstract: A pellicle for an EUV photo mask includes a first layer, a second layer, and a main membrane disposed between the first layer and second layer. The main membrane includes a plurality of co-axial nanotubes, each of which includes an inner tube and one or more outer tubes surrounding the inner tube, and two of the inner tube and one or more outer tubes are made of different materials from each other.

Abstract: A reflection mode photomask includes a multilayer over a substrate. The reflection mode photomask further includes a plurality of absorber stacks over the multilayer. Each absorber stack of the plurality of absorber stacks includes an absorber layer, wherein a material of the absorber layer is selected from the group consisting of tantalum oxynitride and tantalum silicon oxynitride. Each absorber stack of the plurality of absorber stacks further includes an anti-reflective coating (ARC) layer on the absorber layer, wherein a material of the ARC layer is selected from the group consisting of tantalum nitride and tantalum silicon.

Abstract: A method includes placing a photomask having a contamination on a surface thereof in a plasma processing chamber. The contaminated photomask is plasma processed in the plasma processing chamber to remove the contamination from the surface. The plasma includes oxygen plasma or hydrogen plasma.

Abstract: Disclosed is an operating method of an electronic device for manufacture of a semiconductor device. The operating method includes receiving a layout image of the semiconductor device, generating an intermediate image by generating assist features based on main features of the layout image, evaluating a process result by performing simulation based on the intermediate image, and correcting the intermediate image by correcting shapes of the main features and/or the assist features of the intermediate image based on the process result.

Abstract: A pellicle characterized by having an amount of released aqueous gas of 1×10?3 Pa·L/s or less per pellicle, an amount of released hydrocarbon-based gas of 1×10?5 Pa·L/s or less per pellicle in a range of measured mass number of 45 to 100 amu, and an amount of released hydrocarbon-based gas of 4×10?7 Pa·L/s or less per pellicle in a range of measured mass number of 101 to 200 amu, under vacuum after the pellicle has been left to stand for 10 minutes in an atmosphere of 23° C. and 1×10?3 Pa or less.

Abstract: The present invention is to provide a pellicle frame in a frame shape having an upper end face on which a pellicle film is to be arranged and a lower end face to face a photomask, which is characterized by being provided with a notched part from the outer side face toward inner side face of the lower end face; a pellicle including the pellicle frame as an element; and a method for peeling a pellicle from a photomask onto which the pellicle has been attached, which is characterized by inserting a peeling jig into a notched part from a side face of a pellicle frame, and moving the peeling jig in an upper end face direction of the pellicle frame in this state to peel off the pellicle from the photomask.

Abstract: An EUV reflective structure includes a substrate and multiple pairs of a Si layer and a Mo layer. The Si layer includes a plurality of cavities.

Abstract: The present invention is to provide a pellicle frame characterized by including a metal or alloy having a linear expansion coefficient of 10×10?6 (1/K) or less and further a density of 4.6 g/cm3 or less, and a pellicle characterized by including the pellicle frame as an element.

Abstract: The present application discloses a method for fabricating a semiconductor device. The method includes: providing a photomask comprising an opaque layer on a mask substrate and surrounding a translucent layer on the mask substrate; providing a device stack comprising a first dielectric layer on a substrate, a first etch stop layer on the first dielectric layer, and a second dielectric layer on the first etch stop layer; forming a pre-process mask layer on the device stack; patterning the pre-process mask layer using the photomask to form a patterned mask layer comprising a mask region corresponding to the opaque layer, a trench region corresponding to the translucent layer, and a via hole corresponding to the mask opening of via feature. The method also includes performing a damascene etching process to form a via opening in the first dielectric layer and a trench opening in the second dielectric layer.

Abstract: The present invention is to provide a pellicle frame characterized by including a metal or alloy having a linear expansion coefficient of 10×10?6 (1/K) or less and further a density of 4.6 g/cm3 or less, and a pellicle characterized by including the pellicle frame as an element.

Abstract: The present invention is to provide a pellicle frame in a frame shape having an upper end face on which a pellicle film is to be arranged and a lower end face to face a photomask, which is characterized by being provided with a notched part from the outer side face toward inner side face of the lower end face; a pellicle including the pellicle frame as an element; and a method for peeling a pellicle from a photomask onto which the pellicle has been attached, which is characterized by inserting a peeling jig into a notched part from a side face of a pellicle frame, and moving the peeling jig in an upper end face direction of the pellicle frame in this state to peel off the pellicle from the photomask.

Abstract: A pellicle for protecting a photomask from contaminant particles is provided. The pellicle includes a pellicle membrane containing at least one porous film. The at least one porous film includes a network of a plurality of nanotubes. At least one nanotube of the plurality of nanotubes includes a core nanotube and a shell nanotube surrounding the core nanotube. The core nanotube includes a material different from the shell nanotube. The pellicle further includes a pellicle border attached to the pellicle membrane along a peripheral region of the pellicle membrane and a pellicle frame attached to the pellicle border.

Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a patterned absorber layer on the reflective multilayer stack is provided. The patterned absorber layer includes an alloy comprising tantalum and at least one alloying element. The at least one alloying element includes at least one transition metal element or at least one Group 14 element.