Abstract: A pellicle for protecting a photomask from contaminant particles is provided. The pellicle includes a pellicle membrane containing at least one porous film. The at least one porous film includes a network of a plurality of nanotubes. At least one nanotube of the plurality of nanotubes includes a core nanotube and a shell nanotube surrounding the core nanotube. The core nanotube includes a material different from the shell nanotube. The pellicle further includes a pellicle border attached to the pellicle membrane along a peripheral region of the pellicle membrane and a pellicle frame attached to the pellicle border.

Abstract: The present invention is to provide a pellicle frame characterized by including a metal or alloy having a linear expansion coefficient of 10×10?6 (1/K) or less and further a density of 4.6 g/cm3 or less, and a pellicle characterized by including the pellicle frame as an element.

Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a patterned absorber layer on the reflective multilayer stack is provided. The patterned absorber layer includes an alloy comprising tantalum and at least one alloying element. The at least one alloying element includes at least one transition metal element or at least one Group 14 element.

Abstract: In accordance with an aspect of the present disclosure, in a pattern forming method for a semiconductor device, a first opening is formed in an underlying layer disposed over a substrate. The first opening is expanded in a first axis by directional etching to form a first groove in the underlying layer. A resist pattern is formed over the underlying layer. The resist pattern includes a second opening only partially overlapping the first groove. The underlying layer is patterned by using the resist pattern as an etching mask to form a second groove.

Abstract: In a method of manufacturing a reflective mask, a photo resist layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer on the substrate, a capping layer on the reflective multilayer, an absorber layer on the capping layer and a hard mask layer, and the absorber layer is made of Cr, CrO or CrON. The photo resist layer is patterned, the hard mask layer is patterned by using the patterned photo resist layer, the absorber layer is patterned by using the patterned hard mask layer, and an additional element is introduced into the patterned absorber layer to form a converted absorber layer.

Abstract: A method includes: providing a photomask used in extreme ultra violet (EUV) lithography; receiving information of the photomask; determining a bias voltage of an electron beam writer system according to the information; and performing a repairing operation on the photomask by the electron beam writer system with the bias voltage.

Abstract: A method for semiconductor metrology includes depositing a first film layer on a semiconductor substrate and a second film layer overlying the first film layer. The first and second film layers are patterned to create an overlay target having a specified geometrical form by using a projection system having a predefined resolution limit to project optical radiation onto the semiconductor substrate through at least one mask. The mask contains target features having target feature dimensions no less than the predefined resolution limit in an arrangement corresponding to the specified geometrical form of the overlay target and assist features interleaved with the target features and having at least one assist feature dimension that is less than the predefined resolution limit.

Abstract: A method of determining overlay of a patterning process, the method including: illuminating a substrate with a radiation beam such that a beam spot on the substrate is filled with one or more physical instances of a unit cell, the unit cell having geometric symmetry at a nominal value of overlay; detecting primarily zeroth order radiation redirected by the one or more physical instances of the unit cell using a detector; and determining, by a hardware computer system, a non-nominal value of overlay of the unit cell from values of an optical characteristic of the detected radiation.

Abstract: A mask assembly and an apparatus and method for manufacturing a display apparatus are provided. A mask assembly includes a mask frame and a mask on the mask frame and having at least one opening. The mask includes a mask body portion having the at least one opening, and a protruding portion arranged to surround the at least one opening and including an inner surface defining the at least one opening, the protruding portion protruding from the mask body portion and configured to protrude toward a display substrate and contact the display substrate. A deposition material is configured to pass through the at least one opening to be deposited in an entire display area of a display panel including a plurality of pixels.

Abstract: A memory device is provided. The memory device includes a main feature disposed beneath a surface of a photolithographic mask. The memory device further includes at least one Sub-Resolution Assistant Feature (SRAF) proximate to the main feature beneath the surface. The main feature has an electrical conductivity based on an area relationship with the at least one SRAF.

Abstract: A reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask.

Abstract: A pellicle frame including a frame base having an anodized film on a surface thereof and covered with a transparent polymer film, where the polymer film is formed without color unevenness, is described. The inside surface of the pellicle frame has reduced glare due to particles and has a light resistance to an ArF laser at 1500 J. A method for manufacturing a semiconductor device using a photomask with the pellicle is also described.

Abstract: A photomask assembly may be formed such that stress relief trenches are formed in a pellicle frame of the photomask assembly. The stress relief trenches may reduce or prevent damage to a pellicle that may otherwise result from deformation of the pellicle. The stress relief trenches may be formed in areas of the pellicle frame to allow the pellicle frame to deform with the pellicle, thereby reducing the amount damage to the pellicle caused by the pellicle frame.

Abstract: A reticle is provided. The reticle includes a first reflective multilayer (ML) over a mask substrate and a capping layer over the first reflective ML. The reticle also includes a first absorption layer over the capping layer and a second reflective multilayer (ML) over the first absorption layer. The reticle further includes an etch stop layer over the second reflective ML and a third reflective multilayer (ML) over the etch stop layer. In addition, the reticle includes an absorption film pair over the third reflective ML.

Abstract: A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.

Abstract: A pellicle for an EUV photo mask includes a base membrane layer, a core layer disposed over the base membrane layer and one or more metallic layers disposed over the core layer.

Abstract: A pellicle assembly includes a pellicle frame defining a surface onto which a pellicle is, or to be, attached. The pellicle assembly includes one or more three-dimensional expansion structures that allow the pellicle to expand under stress. A pellicle assembly for a patterning device, the pellicle assembly includes one or more actuators for moving the pellicle assembly towards and way from the patterning device.

Abstract: There are provided a reflective photomask blank and a reflective photomask, which are compatibly capable of suppressing a shadowing effect and improving the life of a mask. A reflective photomask blank (10) includes a substrate (1), a reflection part (7) provided on the substrate (1) and configured to reflect incident light, and a low reflection part (8) provided on the reflection part (7) and configured to absorb incident light. The low reflection part (8) has a multi layer structure of at least two layers or more layers. An outermost layer (5) of the low reflection part (8) has a refractive index n equal to or more than 0.90 and an extinction coefficient k equal to or less than 0.02 with respect to extreme ultraviolet (EUV) light (where a wavelength is 13.5 nm).

Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).

Abstract: A mask includes a first boundary area and a plurality of exposure pattern areas, the first boundary area including a region surrounding the plurality of exposure pattern areas; in the first boundary area is disposed a plurality of first overlay mark units, each of which includes a plurality of overlay marks; the plurality of overlay marks are sequentially arranged along extension directions of adjacent transversal or longitudinal first boundary lines; a plurality of first overlay mark units are symmetric in pairs with a central line of the mask as a symmetric axis, and two symmetric first overlay mark units form an overlay mark set; arrangement directions of two overlay marks in the first overlay mark units in the same overlay mark set are parallel to and displaced with respect to each other.

Abstract: A method for sizing a greyscale lithography mask is disclosed. The mask includes first opaque zones, being opaque to light-exposing radiation, located in first pixels forming a first mask grating. A first target density of a first surface density of first opaque zones is first established. This first target density makes it possible to expose a resin to light over a first given target thickness when it is exposed to the radiation through the first grating. The dimensions of the first pixels and the dimensions of the first opaque zones are then established, such that the value of an error over the first target thickness is less than a first given threshold. The dimensions obtained for the sizing of the first mask grating are used.

Abstract: Methods, systems, and devices for wireless communication are described. In some systems, a user equipment (UE) may transmit, to a network entity, a first signal including a request to update a resolution of a phase shifting operation associated with beam-based communications. The UE may receive, from the network entity, a second signal approving the request. The UE may communicate using a beam according to an updated resolution of the phase shifting operation based on the second signal approving the request. Additionally, or alternatively, the UE may transmit a first signal including a request to suspend a beam refinement process based on the resolution of the phase shifting operation. The UE may receive a second signal approving the request to suspend the beam refinement process. The UE may communicate with the network entity using a beam based on suspending further beam refinement in response to the second signal.

Abstract: A dust-proof covering element is provided to close a projection aperture located in the dashboard of a vehicle and through which the information-carrying source light beam projected by the projecting module of a head-up display device passes on its way to a partially reflective return element. The covering element comprises a transparent carrier and an optical coating placed on one of the faces of the carrier; wherein, the optical coating comprises a metal layer with plasmonic properties, said metal layer being endowed with an array of subwavelength nanoperforations, and being configured to allow the extraordinary transmission of one or more restricted bands of wavelengths of the visible spectrum that are centered on the one or more wavelengths of the light beam projected by the projecting module.

Abstract: Provided is a substrate with a thin film for manufacturing a reflective mask that at least does not adversely affect performance of the reflective mask even when a thin film of a substrate with the thin film such as a reflective mask blank comprises impurities. A substrate with a thin film comprises: a substrate; and at least one thin film formed on a main surface of the substrate. The thin film comprises a matrix material constituting the thin film and a small-amount material other than the matrix material. When secondary ion intensity emitted from the thin film is measured by time-of-flight secondary ion mass spectrometry (TOF-SIMS), a ratio (I2/I1) of secondary ion intensity (I2) of at least one of the small-amount material in the thin film to secondary ion intensity (I1) of the matrix material is more than 0 and 0.300 or less.

Abstract: A reflective mask blank for EUV lithography includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light. The substrate, the multilayer reflective film, the protection film, and the absorption film are arranged in this order from bottom to top. The protection film includes an upper layer made of a rhodium-based material containing Rh as a main component that contains only Rh, or contains Rh and at least one element selected from a group consisting of N, O, C, B, Ru, Nb, Mo, Ta, Ir, Pd, Zr, and Ti; and a lower layer satisfying a condition k<?0.15n+0.16 in an EUV region where n represents a refractive index and k represents an extinction coefficient.

Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).

Abstract: A phase shift mask for extreme ultraviolet lithography includes a substrate, a reflective layer on the substrate, a capping layer on the reflective layer, a buffer pattern on the capping layer, the buffer pattern including an opening exposing a surface of the capping layer, and an absorber pattern on the buffer pattern, the absorber pattern including a refractive index less than a refractive index of the buffer pattern and a thickness greater than a thickness of the buffer pattern. The buffer pattern includes a material having an etch selectivity with respect to the absorber pattern and the capping layer.

Abstract: An extreme ultraviolet mask includes a substrate, a reflective multilayer stack over the substrate, a capping layer over the reflective multilayer stack, a patterned absorber layer over a first portion of the capping layer, and a magnetic layer over a second portion of the capping layer around the first portion.

Abstract: Method for inverse optical proximity correction of super-resolution lithography based on level set algorithm is provided, including: obtaining first mask data according to a target pattern, and constructing a level set function; performing forward simulation, so as to obtain an electric field distribution on a photoresist and a first structural vector electric field distribution on a mask; obtaining a photoresist pattern according to the electric field distribution on the photoresist, and calculating an imaging error between the photoresist pattern and the target pattern; performing accompanying simulation, so as to obtain a second structural vector electric field distribution; obtaining a level set gradient by means of performing calculation according to the first structural vector electric field distribution, the second structural vector electric field distribution and the imaging error; and evolving the level set function, performing update to obtain second mask data, and performing iterative calculation u

Abstract: A pellicle characterized by having an amount of released aqueous gas of 1×10?3 Pa·L/s or less per pellicle, an amount of released hydrocarbon-based gas of 1×10?5 Pa·L/s or less per pellicle in a range of measured mass number of 45 to 100 amu, and an amount of released hydrocarbon-based gas of 4×10?7 Pa·L/s or less per pellicle in a range of measured mass number of 101 to 200 amu, under vacuum after the pellicle has been left to stand for 10 minutes in an atmosphere of 23° C. and 1×10?3 Pa or less.

Abstract: In a method of manufacturing a photo mask, an etching mask layer having circuit patterns is formed over a target layer of the photo mask to be etched. The photo mask includes a backside conductive layer. The target layer is etched by plasma etching, while preventing active species of plasma from attacking the backside conductive layer.

Abstract: A filtration formed nanostructure pellicle film is disclosed. The filtration formed nanostructure pellicle film includes a plurality of carbon nanofibers that are intersected randomly to form an interconnected network structure in a planar orientation. The interconnected structure allows for a high minimum EUV transmission rate of at least 92%, with a thickness ranging from a lower limit of 3 nm to an upper limit of 100 nm, to allow for effective EUV lithography processing.

Abstract: A template of one embodiment includes an alignment mark. The alignment mark includes a first main pattern and a first auxiliary pattern. In the first main pattern, a first part and a second part are disposed according to a predetermined repeating pattern. The first auxiliary pattern is configured as a pattern opposite to the repeating pattern in a region outside an end of the first main pattern.

Abstract: A phase-shift reticle for a photolithography process in semiconductor fabrication is provided. The reticle includes a substrate, a reflective structure, a pattern defining layer and a phase shifter. The reflective structure is disposed over the substrate. The pattern defining layer includes a first material and is deposited over the reflective structure. The pattern defining layer comprises a pattern trench. The phase shifter includes a second material and disposed in the pattern trench. A transmittance of the second material is different from a transmittance of the first material.

Abstract: Provided is a reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern while suppressing an increase in the thickness of an absorber film when EUV exposure is conducted in an atmosphere including hydrogen gas. A reflective mask blank (100) comprises a substrate (1), a multilayer reflection film (2) on the substrate, and an absorber film (4) on the multilayer reflection film. The reflective mask blank (100) is characterized in that: the absorber film (4) includes an absorption layer (42) and a reflectance adjustment layer (44); the absorption layer (42) contains tantalum (Ta), nitrogen (N), and at least one added element selected from hydrogen (H) and deuterium (D); the absorption layer (42) includes a lower surface region (46) including a surface on the substrate side, and an upper surface region (48) including a surface on the side opposite to the substrate; and the concentration (at.

Abstract: An inspection apparatus includes: a stage configured to receive a photomask; a radiation source configured to inspect the photomask; a mirror configured to direct a first radiation beam from the radiation source to the photomask at a first tilt angle; an aperture stop configured to receive a second radiation beam reflected from the photomask through an aperture of the aperture stop, wherein the aperture is tangent at a center of the aperture stop; and a detector configured to generate an image of the photomask according to the second radiation beam.

Abstract: A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer.

Abstract: A method of forming a pattern in a photoresist includes forming a photoresist layer over a substrate, and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer composition to the selectively exposed photoresist layer to form a pattern. The developer composition includes a first solvent having Hansen solubility parameters of 15<?d<25, 10<?p<25, and 6<?h<30; an acid having an acid dissociation constant, pKa, of ?15<pKa<5, or a base having a pKa of 40>pKa>9.5; and a second solvent having a dielectric constant greater than 18. The first solvent and the second solvent are different solvents.

Abstract: A method includes holding a mask using an electrostatic chuck. The mask includes a substrate having a first bump and a second bump separated from the first bump and a patterned layer. The first bump and the second bump face the electrostatic chuck. The substrate is between the patterned layer and the electrostatic chuck. The first bump and the second bump are spaced apart from the patterned layer. The first bump and the second bump are ring strips in a top view, and the first bump has a rectangular cross section and the second bump has a triangular cross section. The method further includes generating extreme ultraviolet (EUV) radiation using an EUV light source; and directing the EUV radiation toward the mask, such that the EUV radiation is reflected by the mask.

Abstract: A mask includes a reflective layer, an absorption layer and an absorption part. The absorption layer is disposed over the reflective multilayer. The absorption part is disposed in the reflective layer and the absorption layer, wherein an entire top surface of the absorption part is substantially flush with a top surface of the absorption layer.

Abstract: A pellicle for a reflective photo mask includes a frame, a core layer having a front surface and a rear surface, and disposed over the frame, a first capping layer disposed on the front surface of the core layer, an anti-reflection layer disposed on the first capping layer, a barrier layer disposed on the anti-reflection layer, and a heat emissive layer disposed on the barrier layer.

Abstract: A method for microengineering a gradient structure on a metal surface. A metal surface including at least first, second, and third metal surface regions is exposed to a metal-removing agent. A portion of surface metal atoms is removed by the metal-removing agent in each of the first, second, and third metal surface regions. Sequential metal removal processes expose only the second and third regions to the metal-removing agent, followed by exposing only the third region to the metal-removing agent. A gradient metal surface is formed having different properties in each of the first, second, and third metal surface regions. In a further aspect, quantitative surface-enhanced Raman spectroscopy may be performed using the treated metal surface. An amount of an analyte is determined based on its position in one of the first, second, or third metal surface regions.

Abstract: A circuit layout patterning method includes: receiving a photomask substrate including a shielding layer; defining a chip region and a peripheral region adjacent to the chip region; forming a design pattern in the chip region; forming a reference pattern by emitting one first radiation shot and a beta pattern by emitting a plurality of second radiation shots in the peripheral region, wherein a pixel size of the first radiation shot is greater than a pixel size of the second radiation shot; comparing a width of the reference pattern and a width of the beta pattern; transferring the design pattern to the shielding layer if a difference between the width of the reference patterned and the width of the beta pattern is within a tolerance; and transferring the design pattern of the photomask to a semiconductor substrate.

Abstract: An overlay mark includes a first, a second, a third, and a fourth component. The first component is located in a first region of the first overlay mark and includes a plurality of gratings that extend in a first direction. The second component is located in a second region of the first overlay mark and includes a plurality of gratings that extend in the first direction. The third component is located in a third region of the first overlay mark and includes a plurality of gratings that extend in a second direction different from the first direction. The fourth component is located in a fourth region of the first overlay mark and includes a plurality of gratings that extend in the second direction. The first region is aligned with the second region. The third region is aligned with the fourth region.

Abstract: A reflective mask blank that is a material for a reflective mask used in EUV lithography using EUV light as the exposure light, including a substrate, a multilayer reflection film that is formed on one main surface of the substrate and reflects the exposure light, and an absorber film that is formed on the multilayer reflection film and absorbs the exposure light, the absorber film being a single layer consisting of a first layer, or a plurality of layers consisting of, from the substrate side, a first layer and a second layer, the first layer being composed of tantalum and nitrogen and containing 55 to 70 at % of tantalum and 30 to 45 at % of nitrogen, the second layer being composed of tantalum and nitrogen, and oxygen of not more than 40 at %.

Abstract: The present invention is to provide a pellicle frame in a frame shape having an upper end face on which a pellicle film is to be arranged and a lower end face to face a photomask, which is characterized by being provided with a notched part from the outer side face toward inner side face of the lower end face; a pellicle including the pellicle frame as an element; and a method for peeling a pellicle from a photomask onto which the pellicle has been attached, which is characterized by inserting a peeling jig into a notched part from a side face of a pellicle frame, and moving the peeling jig in an upper end face direction of the pellicle frame in this state to peel off the pellicle from the photomask.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.

Abstract: A method for fabricating a flexographic printing plate for printing image patterns including one or more uniform image regions includes defining a repeating tile having a plurality of different feature shapes positioned in a pattern of pseudo-random feature locations. A plate formation pattern corresponding to the image pattern is determined wherein the repeating tile is applied in a tiled arrangement to the uniform image regions. The plate formation pattern is used to form a flexographic printing plate, wherein regions of the flexographic printing plate corresponding to the uniform image regions of the image pattern include a pattern of raised features in positions corresponding to the feature positions in the repeating tile.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.