Abstract: A photomask includes at least one line pattern monitoring mark having unit blocks that include design line patterns. Each of the unit blocks includes three design line patterns sequentially offset in a second direction perpendicular to the first direction, the unit blocks include a first unit block and a second unit block adjacent to the first unit block, the second unit block is offset from the first unit block by a rounding length in the second direction and is spaced apart from the first unit block in the first direction. In a method of manufacturing an integrated circuit device, monitoring line patterns are formed using the photomask, and a line end profile error in the monitoring line patterns is determined based on a cross-sectional structure of the monitoring line patterns taken along a line extending through at least a portion of the monitoring line patterns in the first direction.

Abstract: An image system dynamically updates drive sequences in an image system. Drive sequences are image display settings or display driving characteristics with which a display is operated. The image system may determine the drive sequence at least partially based on input from one or more sensors. For example, the image system may include sensors such as an inertial measurement unit, a light sensor, a camera, a temperature sensor, or other sensors from which sensor data may be collected. The image system may analyze the sensor data to calculate drive sequence settings or to select a drive sequence from a number of predetermined drive sequences. Displaying image content on a display includes providing the display with image data and includes operating the display with various drive sequences.

Abstract: A multilayered-reflective-film-provided substrate includes: a substrate; a multilayered reflective film provided on the substrate; and a protective film provided on the multilayered reflective film, in which the protective film includes ruthenium (Ru) and at least one additive material selected from aluminum (Al), yttrium (Y), zirconium (Zr), rhodium (Rh), and hafnium (Hf), and a content of the additive material is 5% or more by atom and less than 50% by atom.

Abstract: Embodiments relate to a transfer device of a semiconductor light emitting device and a display device of a semiconductor light emitting device using the same. A semiconductor light emitting device transfer device according to an embodiment can include a line beam laser generating device and a through-type glass mask disposed on a semiconductor substrate including a predetermined semiconductor light emitting device. The line beam laser 210 generated by the line beam laser generator can pass through the through-type glass mask to selectively transfer the semiconductor light emitting device on the semiconductor substrate onto a predetermined panel substrate.

Abstract: A foreign object height measurement method including: storing in advance dependence data indicating a dependence of a calculated value of the height of the foreign object calculated from a foreign object image extracted from the charged particle image on an orientation of the foreign object; extracting a measurement target foreign object image, being an image of a measurement target foreign object, from the charged particle image; and outputting a measurement value of a height of the measurement target foreign object along with a warning regarding reliability or measuring the height of the measurement target foreign object from a charged particle image acquired by rotating the sample stage and changing an orientation of the measurement target foreign object detected from the measurement target foreign object image when it is determined that the orientation of the measurement target foreign object does not satisfy an acceptable error range based on the dependence data.

Abstract: This disclosure describes systems, methods, and devices related to optical proximity corrections to an integrated circuit photomask. A method may include identifying a first contour of a first adjacent polygon of a photomask predicted for a first polygon of an integrated circuit, the first contour excluding a first corner formed by a first edge and a second edge of the first polygon; identifying a second contour of a second adjacent polygon of a photomask predicted for a second polygon of the integrated circuit, the second contour excluding a second corner formed by a third edge and a fourth edge of the second polygon; generating a fast contour prediction based on corner rounding associated with the first contour and the second contour; and generating, based on the fast contour prediction, a minimum distance between the first contour and the second contour, the minimum distance associated with the optical proximity corrections.

Abstract: A method for fabricating a photomask layout is provided. The method includes: receiving a first layout including a main pattern; generating a second layout by generating an assist feature in consideration of optical properties of the main pattern in the first layout; generating a third layout by performing optical proximity correction (OPC) on a second layout; and outputting the third layout to a corrected layout when the assist feature is not generated on an ACI image of a semiconductor film etched by using a photomask generated using the third layout, as an etching mask.

Abstract: A pellicle membrane for a lithographic apparatus, the membrane including uncapped carbon nanotubes. A method of regenerating a pellicle membrane, the method including decomposing a precursor compound and depositing at least some of the products of decomposition onto the pellicle membrane. A method of reducing the etch rate of a pellicle membrane, the method including providing an electric field in the region of the pellicle membrane to redirect ions from the pellicle, or heating elements to desorb radicals from the pellicle, preferably wherein the pellicle membrane is a carbon nanotube pellicle membrane. An assembly for a lithographic apparatus, the assembly including a biased electrode near or including the pellicle membrane or heating means for the pellicle membrane.

Abstract: A lithographic process for the production of a semiconductor device has recently caused a problem in terms of generation of a sublime component (sublimate) derived from a low-molecular-weight compound (e.g., polymer resin, crosslinking agent, or crosslinking catalyst) during baking upon formation of a resist underlayer film from a resist underlayer film-forming composition. The resist underlayer film-forming composition of the present invention uses an organic acid having a fluoroalkyl group or an organic acid salt having a fluoroalkyl group, as a crosslinking catalyst, and thus the resist underlayer film-forming composition containing the crosslinking catalyst can effectively prevent generation of a sublimate derived from a low-molecular-weight component contained in the resist underlayer film during formation of the film.

Abstract: Embodiments of the present disclosure relate to methods, systems and apparatus for improving dose uniformity of the photolithography system. The method includes projecting a write beam from a projection unit toward a mask to form a plurality of incident lights, adjusting the projection unit to create a distribution of incidence angles corresponding to the incident lights, focusing the plurality of incident lights toward a photoresist layer disposed over a substrate with a lens, removing portions of the photoresist layer to form the device pattern, and forming structures on the substrate corresponding to the device pattern. The mask has a mask pattern corresponding to a device pattern. By focusing the plurality of incident lights towards the photoresist, a swing curve of the incident lights interfere to reduce a total swing curve of the incident lights to develop a photoresist layer with a photoresist pattern corresponding to the device pattern.

Abstract: A method of manufacturing a photomask including the steps of providing a photomask blank, inspecting the photomask blank to determine presence of one or more defects in the photomask blank, wherein the one or more defects comprise one or more photomask substrate defects, and compensating for the one or more photomask substrate defects by roughening one or more surface portions of the photomask substrate.

Abstract: An optical proximity correction (OPC) method for manufacturing a semiconductor chip including detecting edges of an initial layout pattern and determining an edge violating a mask rule, among the edges, as a target edge, setting a reference control point (RCP) on the target edge, forming a multi-edge by dividing the target edge based on the RCP, setting additional control points on the multi-edge, forming a modified layout pattern by transforming the multi-edge into a curved edge based on the RCP and the additional control points, performing an OPC simulation based on the modified layout pattern, and calculating an edge placement error (EPE) of the modified layout pattern based on a result of the OPC simulation may be provided.

Abstract: A micro-lens based module including at least one nanostructured layer, the nanostructured layer including one or several diffractive domains corresponding to an optical object. The claimed micro-lens based module allows dynamic and/or coloured projections of optical objects with an improved optical quality. The present invention also relates to a projection device and a method of projection of improved coloured and/or dynamic images.

Abstract: Provided is a pellicle, including a frame on which a pellicle film is placed and a mask adhesive layer which is placed on the frame, wherein when an attachment portion S1 of the adhesive layer to a quartz mask is irradiated with xenon (Xe) excimer lamp light from a back surface of the mask for 2 minutes and the pellicle is then peeled off, a residual ratio (residual area of the adhesive layer on a quartz mask/area of the attachment portion S1 of the adhesive layer) of the adhesive layer is 0.001 to 5.0%.

Abstract: A target processing method includes: importing a target into a processing chamber; forming a film including carbon on the target using at least one of first ion including carbon and a first plasma including carbon; and removing the film by a reaction between a second plasma and the film, wherein the forming of the film and the removing of the film are alternately performed a number of times in the processing chamber without removing the target from the processing chamber.

Abstract: There is provided an EUV transmissive membrane having an EUV transmittance of 80.0% or more at a wavelength of 13.5 nm and including a main layer having an IR emissivity of 2.0% or more at a wavelength of 2 ?m and a protective layer that covers at least one side of the main layer and has an IR transmittance of 70% or more at a wavelength of 2 ?m.

Abstract: Embodiments of the present disclosure herein include a method of removing a contamination material from an optical device. The method may include disposing an optical device in a process chamber, the optical device having optical device structures formed in a substrate, the contamination material is disposed at least on sidewalls of the optical device structures and within trenches between the optical device structures, and exposing the optical device to a plasma generated in the process chamber, the plasma generated from oxygen gas (O2), chlorine gas (Cl2), Argon (Ar), or a combination thereof, the exposing the optical device to the plasma removes the contamination material.

Abstract: A pellicle for an EUV photo mask includes a membrane attached to a frame. The membrane includes nanotubes, Ru—O—X catalyst structures partially covering a surface of each nanotube, and a protection layer to cover the Ru—O—X catalyst structures and the surface of each nanotube. X is a metal element of Mo, Ti, Zr or Nb. The Ru—O—X catalyst structures include first nano-particles of a X-containing material formed on the surface of each nanotube, and second nano-particles of a Ru-containing material formed on the first nano-particles, thereby forming catalysts or catalyst bridges. The pellicle advantageously has high EUV light transmittance and improved endurance against attacking particles (such as hydrogen particles), thereby having prolonged lifetime.

Abstract: In a mask review method, a vacuum is drawn in a vacuum chamber that contains an extreme ultraviolet (EUV) actinic mask review system including an EUV illuminator, a mask stage, a projection optics box, and an EUV imaging sensor. With the vacuum drawn, a position is adjusted of at least one component of the EUV actinic mask review system. After the adjusting and with the vacuum drawn, an actinic image is acquired of an EUV mask mounted on the mask stage using the EUV imaging sensor. The acquiring includes transmitting EUV light from the EUV illuminator onto the EUV mask and projecting at least a portion of the EUV light reflected by the EUV mask onto the EUV imaging sensor using the projection optics box.

Abstract: A method for source mask optimization to increase scanner throughput for a patterning process is described. The method includes computing a multi-variable cost function of design variables that are representative of characteristics of the patterning process. The design variables may include (a) an illumination variable that is characteristic of an illumination system, and (b) a design layout variable that is characteristic of a design layout. The multi-variable cost function may be a function of a throughput of the patterning process. The method further includes reconfiguring the characteristics of the patterning process by adjusting the design variables until a predefined termination condition is satisfied.

Abstract: In a method of manufacturing a photo mask, an etching mask layer having circuit patterns is formed over a target layer of the photo mask to be etched. The photo mask includes a backside conductive layer. The target layer is etched by plasma etching, while preventing active species of plasma from attacking the backside conductive layer.

Abstract: Some embodiments provide a method for optimizing a mask layout generated from a design layout of an IC. Based on an initial mask layout for a first layer, the method generates a simulated wafer image including shapes representing components of the first layer, including a first component that overlaps with a second component on a second layer. The method identifies a more critical first region and a less critical second region of a first shape of the first component that both overlap with a second shape of the second component. The more critical first region is more important to ensuring overlap of the first shape with the second shape. To improve overlap between the first and second shapes, the method uses different costs for the more critical first region and the less critical second region to modify the initial mask layout to produce a modified mask layout.

Abstract: The present disclosure provides a method of manufacturing a semiconductor structure. The method includes several operations. A substrate including a device region and a scribe line region is provided. A first layer is formed over the substrate. A first photoluminescent layer is formed over the first layer in the scribe line region. The first layer and the first photoluminescent layer are patterned to form a first pattern in the scribe line region. A first patterned mask layer is formed over a second layer. An alignment of the first patterned mask layer and the first pattern is detected. A pattern of the first patterned mask layer is transferred to the second layer to form a second pattern in the scribe line region.

Abstract: A method of fabricating a mask is provided. The method includes providing a hard mask layer disposed on top of absorber, a capping layer, and a multilayer that are disposed on a substrate. The method includes forming a middle layer over the hard mask layer, forming a photo resist layer over the middle layer, patterning the photo resist layer, etching the middle layer through the patterned photo resist layer, etching the hard mask layer through the patterned middle layer, and etching the absorber through the patterned hard mask layer. In some embodiments, etching the hard mask layer through the patterned middle layer includes a dry-etching process that has a first removal rate of the hard mask layer and a second removal rate of the middle layer, and a ratio of the first removal rate of the hard mask layer to the second removal rate of the middle layer is greater than 5.

Abstract: According to one embodiment, a manufacturing method of a display device includes forming a first conductive oxide layer, forming a first metal layer at a first pressure, forming a second metal layer at a second pressure, forming a second conductive oxide layer, forming a resist having a predetermined shape, etching the second conductive oxide layer using the resist as a mask, retracting an end portion of the second metal layer relative to an end portion of the second conductive oxide layer and an edge of a lower surface of the first metal layer by etching the second metal layer and the first metal layer using the resist as a mask, etching the first conductive oxide layer using the resist as a mask, and removing the resist.

Abstract: A color conversion substrate includes an upper substrate including a first area and a second area adjacent to the first area and a first color filter, a second color filter, and a third color filter which are disposed on the upper substrate and in the first area and the second area, and an opening corresponding to the first color filter is defined by a one of the second color filter and the third color filter having a smaller stitch error between the first area and the second area.

Abstract: The inventive concept provides a liquid supply unit which may implement a rotation (swing) of a plurality of nozzles by a single motor, and which has simple structure. The liquid supply unit includes a first nozzle, a second nozzle, a motor, and a first belt. The first nozzle includes a first supply pipe for supplying a liquid, a first rotation part provided at a bottom part of the first supply pipe, and a first electromagnetic clutch provided at a bottom part of the first rotation part. The second nozzle includes a second supply pipe for supplying a liquid, a second rotation part provided at a bottom part of the second supply pipe, and a second electromagnetic clutch provided at a bottom part of the second rotation part. The motor provides a rotation force to the first electromagnetic clutch. The first belt which interlocks a rotation of the first electromagnetic clutch and the second electromagnetic clutch.

Abstract: The present invention relates to a method of high-speed recording and reading data on or in a layer (10) of a first material and to a device for high-speed recording and reading data on or in a layer (10) of a first material using a laser source (19, a galvanometer (4) and a digital micromirror (5) adapted to emit multiple laser beams.

Abstract: A method of forming a pattern of a semiconductor device includes: preparing a semiconductor substrate including a cell region and an outer region; applying a photoresist on the semiconductor substrate; irradiating extreme ultraviolet (EUV) light reflected from an EUV mask, onto the photoresist; forming a photoresist pattern in the cell region and the outer region; and etching the semiconductor substrate, using the photoresist pattern as an etch mask. The EUV mask includes: a plurality of main patterns in a first zone, of the EUV mask, corresponding to the cell region; and a first lane and a second lane in a second zone, of the EUV mask, corresponding to the outer region, wherein the first lane and the second lane surround the plurality of main patterns, wherein the first lane has a line-and-space pattern, and the second lane has a protruding pattern.

Abstract: An electrostatic adsorption tool includes an electrostatic adsorption power generation member in which an electrode element group is embedded. The electrostatic adsorption power generation member electrostatically adsorbs a thin object by applying voltage to the electrode element group. The electrostatic adsorption power generation member includes, at least on an adsorption surface that adsorbs the thin object, a first water repellent insulation layer made of a water repellent material.

Abstract: A method of forming a resist pattern includes applying a photoresist to first and second regions of a processing target to form a resist layer. The processing target includes a stacked body of alternately stacked first and second layers. The first region includes an upper surface of the stacked body, and the second region includes a recess extending into the stacked body from the upper surface. The resist layer is then patterned with light passed through a multi-gradation mask including a partial translucent feature at an outer perimeter of the recess, a light shielding feature corresponding in position to the recess, and a translucent feature surrounding the partial translucent feature. A resist pattern is formed including an overhang portion extending above a portion of the recess.

Abstract: A roll-to-plate process for texturing or patterning discrete substrates, such as displays, lighting or solar panels comprising the steps of supplying an imprinting lacquer, texturing or patterning the imprinting lacquer with an imprint texture which imprint texture is formed by openings and elevations thus creating volumes in the imprint texture to obtain an imprinted lacquer and optionally followed by curing the imprinted lacquer to obtain a solidified textured or patterned layer, characterized in that the texturing or patterning is performed with an imprint texture that comprises domains of greater volumes at its edges, and with a flexible stamp with a Young's Modulus of between 0.1 Giga Pascal (GPa) and 10 Giga Pascal (GPa).

Abstract: The present disclosure provides a photomask, including a plurality of pattern areas, each of the pattern areas is defined by a respective boundary, a first pattern area including a first mask feature, and a training area adjacent to a boundary of the pattern area, the training area comprising a first training feature, wherein the first training feature is comparable to the first mask feature.

Abstract: A method includes forming a reflective multilayer over a substrate; depositing a first capping layer over the reflective multilayer, wherein the first capping layer is made of a ruthenium-containing material or a chromium-containing material; performing a treatment to the first capping layer to introduce nitrogen or fluorine into the first capping layer; forming an absorption layer over the first capping layer; and patterning the absorption layer.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes: providing a substrate; forming a plurality of first mask layers over the substrate, wherein each of the first mask layers extends along a first direction; forming a plurality of second mask layers over the substrate, wherein each of the second mask layers extends along a second direction different from the first direction; patterning the plurality of second mask layers to form a cut pattern; forming a first aperture modification layer on the cut pattern to define a plurality of first openings overlapping the plurality of first mask layers along a third direction substantially orthogonal to the first direction and the second direction; patterning the plurality of first mask layers to form an active region definition pattern; and patterning the substrate to define an active region by the active region definition pattern.

Abstract: An embodiment etching tool includes an etch chamber for plasma etching a first wafer to be processed; a transfer chamber coupled to the etch chamber; a first run path between the transfer chamber and the etch chamber, the first run path including a path for moving the first wafer to be processed from the transfer chamber to the etch chamber, where the etching tool is configured to dry develop the first wafer to be processed before etching a hard mask on the first wafer in the etch chamber.

Abstract: There is provided an EUV transmissive membrane including: a main layer composed of metallic beryllium that has a first surface and a second surface; and a pair of surface layers provided on the first surface and the second surface of the main layer, each containing at least one fluoride selected from beryllium fluoride, beryllium fluoride nitride, beryllium fluoride oxide, and beryllium fluoride nitride oxide.

Abstract: In an inspection device, a classification means classifies temporal captured images which capture a target object, into a plurality of groups. A recognition means recognizes the captured images belonging to each of the groups, and outputs a determination result for each of the groups. An integration means integrates respective determination results of the groups, and outputs a final determination result.

Abstract: A method of fabricating a mask by performing optical proximity correction (OPC) is provided. The method of fabricating a mask includes generating a target curve by using bias control points, extracting a first contour of an initial design mask by performing an OPC process, generating a first updated design mask, which is obtained by updating the initial design mask, by using the first contour and the target curve, extracting a second contour of the first updated design mask by performing the OPC process, and generating a second updated design mask by using the second contour and the target curve.

Abstract: A method includes: depositing a mask layer over a substrate; directing radiation reflected from a collector of a lithography system toward the mask layer according to a pattern; blocking a portion of the radiation by a blocking structure, the blocking structure being attached to a reflector of the lithography system; forming openings in the mask layer by removing regions of the mask layer exposed to the radiation; and removing material of a layer underlying the mask layer exposed by the openings.

Abstract: An optical device is fabricated with a higher resolution of features in a patterned lattice. A photoresist is applied to a device layer for the optical device. Several photomasks offset from one another are used in different exposure steps to expose the photoresist with features. The features in each exposure can have different characteristic dimensions, such as different diameters for posts or holes to be produced in the device layer. Once the exposures are complete, the patterned lattice of the features are produced in the device layer. For example, the photoresist is developed, and reactive ion etching is used to produce the features in the device layer.

Abstract: A substrate with a conductive film for manufacturing a reflective mask, the substrate comprising a conductive film having excellent chemical resistance and a small surface roughness (Rms), is obtained. A substrate with a conductive film comprises a conductive film on one of two main surfaces of the substrate. The conductive film comprises chromium. The conductive film comprises a structure in which a lower layer and an upper layer are layered in this order from the substrate side. The lower layer is amorphous. The upper layer has a crystallinity.

Abstract: A mirror module includes a pair of deflecting mirrors which deflect a transmission wave and a reflected wave in a direction in accordance with a rotation angle of a reflecting surface and rotates in accordance with drive of a motor. A dividing plate divides the pair of deflecting mirrors into two portions of a transmission deflecting portion and a reception deflecting portion. Each of the pair of deflecting mirrors includes shielding portions through which passage of the transmission waves is suppressed on at least one of a side surface closer to a transmissive window in a state where the reflecting surface faces the transmitting portion out of both side surfaces located across a rotational axis at the transmission reflecting portion or a side surface farther from the transmissive window in a state where the reflecting surface faces the receiving portion out of both side surfaces located across the rotational axis at the reception deflecting portion.

Abstract: To ascertain an image of an object which emerges when the object is illuminated with illumination light from a partly coherent light source with a target illumination setting having an illumination-side numerical aperture NA_illu and an imaging-side numerical aperture NA_detection, the following procedure is performed: initially, a section of the object is illuminated with illumination light from a coherent measurement light source with an illumination setting having an illumination-side numerical aperture NA_i, which is at least as large as NA_detection. Then, a diffraction image of the illuminated section is recorded. This is implemented by way of a spatially resolved detection in a far field detection plane of a diffraction intensity of illumination light diffracted by the illuminated section with a recording-side numerical aperture NA by way of a plurality of sensor pixels. This recording-side aperture must be greater than or equal to the maximum of NA_illu and NA_detection.

Abstract: A technique that can achieve a pellicle film made of carbon nanotubes and having high in-plane transmittance uniformity. The pellicle film contains a plurality of first carbon nanotubes extending in a first direction and arrayed in the radial direction, and a plurality of second carbon nanotubes extending in a second direction intersecting the first direction, and arrayed in their radial direction.

Abstract: An exposure mask includes a base layer including a first area and a second area spaced apart from a first area in a first direction, a first inspection transmission pattern defined in a first area of a base layer and arranged in a ring shape having at least one connection part in plan view, and a second inspection transmission pattern defined in a second area of a base layer and arranged in a polygonal shape or a circular shape in plan view.

Abstract: A EUV lithography mask includes a substrate of a low thermal expansion material, a first reflective multilayer over the substrate, and a patterned reflective multilayer over the first reflective multilayer. The patterned reflective multilayer includes trenches through the patterned reflective multilayer. Each of the first reflective multilayer and the patterned reflective multilayer includes a stack of film pairs.

Abstract: Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film and a phase shift film which are sequentially formed on a substrate. The phase shift film includes a first layer containing niobium (Nb) and chrome (Cr), and a second layer containing tantalum (Ta) and silicon (Si). In the first layer, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) content ranges from 10 to 40 at %. The blankmask can implement an excellent resolution and NILS, and implement a low DtC.

Abstract: A method for setting at least one side wall angle of at least one pattern element of a photolithographic mask including the steps of: (a) providing at least one precursor gas; (b) providing at least one massive particle beam which induces a local chemical reaction of the at least one precursor gas; and (c) altering at least one parameter of the particle beam and/or a process parameter during the local chemical reaction in order to set the at least one side wall angle of the at least one pattern element.

Abstract: A photomask includes a substrate, an opaque filling formed embedded in the substrate, and an opaque main feature over the substrate. The opaque filling has a first width. The opaque main has a second width greater than the first width of the opaque filling. The opaque filling and the opaque main feature comprise same material.