Abstract: According to an embodiment of the disclosure, an electronic device includes a light source unit to emit infrared light having a specified wavelength band, a camera module, a memory, and a processor, the camera module includes a lens assembly including a first lens having a property to at least partially absorb visible light and one or more second lenses to refract light, which is output through the first lens, at a specified angle, a filter to pass through light, which has the specified wavelength band, of the light output through the lens assembly, and an image sensor to sense light, which is output through the lens assembly and the filter, to obtain an image, and the processor is configured to receive an input of a user to photograph an external object, emit the infrared light using the light source unit based on the input of the user, and obtain, using the camera module, an image corresponding to light, which is reflected from the external object, of the emitted infrared light.

Abstract: According to one embodiment, a reflective mask comprises a reflection layer including a first region having a plurality of first patterns, a second region surrounding the first region, and a third region within the second region. The reflection layer includes a stack of alternating first layers and second layers. An absorber film covers the second region and has a second pattern that includes an opening exposing a portion of the third region. In some examples, the third region can include a plurality of third patterns therein.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer embedded in the multilayer stack of reflective layers.

Abstract: A method performed by a computing system includes receiving a layout pattern, receiving a target pattern associated with the layout pattern, receiving a set of constraints related to the target pattern, simulating a first contour associated with the layout pattern, determining a first difference between the first contour and the target pattern, simulating a second contour associated with a modified layout pattern, and determining a second difference between the second contour and a modified target pattern. The modified target pattern is different than the target pattern and within the constraints. The method further includes fabricating a mask having the final layout pattern.

Abstract: A method includes placing a photomask having a contamination on a surface thereof in a plasma processing chamber. The contaminated photomask is plasma processed in the plasma processing chamber to remove the contamination from the surface. The plasma includes oxygen plasma or hydrogen plasma.

Abstract: A photolithography mask includes a substrate, a reflective multilayer structure over the substrate, an adhesion layer over the reflective multilayer structure, a capping layer over the adhesion layer, and a patterned absorber layer over the capping layer. The capping layer includes a non-crystalline conductive material.

Abstract: The disclosure relates to a half-toned attenuated shift blankmask for extreme ultraviolet lithography including: a reflective film, a capping film, a first etch stop film, a phase shift film, a second etch stop film, and an absorbing film that are sequentially provided on a transparent substrate. The phase shift film has a high reflectance of 20% or more, so characteristics of NILS and MEEF are improved during wafer printing.

Abstract: The present application discloses a photomask for manufacturing an active switch and a method for manufacturing a display panel. The photomask includes a light shielding region, a semi-transmissive region, a light transmitting region and a hollowed-out region, where the light shielding region corresponds to a metal layer of the active switch and is configured to be lighttight; the semi-transmissive region corresponds to a channel region of the active switch, and is configured to be partially transmissive; the light transmitting region is a photomask region other than the light shielding region and the semi-transmissive region and is configured to be completely transmissive; and the hollowed-out region is located within the semi-transmissive region and is configured to be completely transmissive.

Abstract: A pellicle comprises a stress-controlled metal layer. The stress in said metal layer may be between about 500-50 MPa. A method of manufacturing a pellicle comprising a metal layer includes deposing said metal layer by plasma physical vapor deposition. Process parameters are selected so as to produce a desired stress value in said metal layer, such as between about 500-50 MPa.

Abstract: A display device includes first and second substrates each including a short side and a long side, ground parts located on at least one of the short and long sides of each of the first and second substrates and including at least one first ground surfaces, which are perpendicular to opposing surfaces of the first and second substrates, and at least one second ground surfaces, which are provided at at least one edge of the second substrate to define an obtuse angle with reference to the first ground surfaces, and unevenness disposed on the first ground surfaces along a first direction, where the unevenness defines an acute angle with reference to a normal line to the opposing surfaces.

Abstract: Provided is a phase shift mask blank including a substrate, and a phase shift film thereon, the phase shift film composed of a material containing silicon and nitrogen and free of a transition metal, exposure light being KrF excimer laser, the phase shift film consisting of a single layer or a plurality of layers, the single layer or each of the plurality of layers having a refractive index n of at least 2.5 and an extinction coefficient k of 0.4 to 1, with respect to the exposure light, and the phase shift film having a phase shift of 170 to 190° and a transmittance of 4 to 8%, with respect to the exposure light, and a thickness of up to 85 nm.

Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.

Abstract: A mask blank for manufacturing a transfer mask. A thin film (2) includes a material containing a metal, silicon, and nitrogen; a ratio of metal content[atom %] to the total content [atom %] of metal and silicon in the thin film (2) is 15% or less. When the thin film is subjected to an analysis of a secondary ion mass spectrometry and a distribution of a secondary ion intensity of silicon in depth direction, a ratio of 1.6 or less is obtained of (i) a maximum peak [Counts/sec] of a secondary ion intensity of silicon at a surface layer region, which is opposite from a transparent substrate (1), of the thin film (2), divided by (ii) an average value [Counts/sec] of a secondary ion intensity of silicon in a depth direction of an inner region, which is a region excluding the surface layer region and a vicinity region with an interface, of the transparent substrate (1) of the thin film (2).

Abstract: A stamp for micro-transfer printing includes a support having a support stiffness and a support coefficient of thermal expansion (CTE). A pedestal layer is formed on the support, the pedestal layer having a pedestal layer stiffness that is less than the support stiffness and a pedestal layer coefficient of thermal expansion (CTE) that is different from the support coefficient of thermal expansion (CTE). A stamp layer is formed on the pedestal layer, the stamp layer having a body and one or more protrusions extending from the body in a direction away from the pedestal layer. The stamp layer has a stamp layer stiffness that is less than the support stiffness and a stamp layer coefficient of thermal expansion that is different from the support coefficient of thermal expansion.

Abstract: A reticle, a reticle container and a method for discharging static charges accumulated on a reticle are provided. The reticle includes a mask substrate, a reflective multilayer (ML) structure, a capping layer, an absorption structure and a conductive material structure. The mask substrate has a front-side surface and a back-side surface. The reflective ML structure is positioned over the front-side surface of mask substrate. The capping layer is positioned over the reflective ML structure. The absorption structure is positioned over the capping layer. The conductive material structure is positioned over a sidewall surface of the mask substrate and a sidewall surface of the absorption structure.

Abstract: In implementations of systems for generating candidate mirror snap points using determined axes of symmetry, a computing device implements a symmetry system to receive vector object data describing a set of points of a vector object. The symmetry system generates convex polygons that enclose the set of points and identifies a particular convex polygon that has a smallest area. A side of the particular convex polygon is determined as an axis of symmetry for the vector object. The symmetry system generates an indication for display in a user interface of a candidate snap point based on the axis of symmetry and a point of the set of points of the vector object.

Abstract: Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more first printed structures and second printed structures. The first printed structures are printed by illumination having a first non-telecentricity and the second printed structures being printed by illumination having a second non-telecentricity, different to said first non-telecentricity. A focus dependent parameter related to a focus-dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based at least in part on the focus dependent parameter is derived therefrom.

Abstract: An alignment mark includes an alignment region, a peripheral region and a shielding region. The alignment region has an outer contour; the peripheral region is disposed around at least a part of the outer contour of the alignment region; the shielding region is disposed around at least a part of the outer contour of the alignment region and is non-overlapped with the peripheral region; and the alignment region and the shielding region are opaque, and the peripheral region is at least partially transparent.

Abstract: A pellicle frame for supporting a pellicle, the frame having a first surface and a second surface opposite the first surface, and a structure provided between the first and the second surfaces, wherein the first and second surfaces and the structure at least partially define at least one volume therebetween that is devoid of the material that forms the frame.

Abstract: A robust, high-transmission pellicle for extreme ultraviolet lithography systems is disclosed. In one example, the present disclosure provides a pellicle that includes a membrane and a frame supporting the membrane. The membrane may be formed from at least one of a transparent carbon-based film and a transparent silicon based film. The at least one of the transparent carbon-based film and the transparent silicon based film may further be coated with a protective shell. The frame may include at least one aperture to allow for a flow of air through a portion of the pellicle.

Abstract: Provided is a mask blank in which a light shielding film which is a single layer film formed of a silicon nitride-based material has high light shielding performance against ArF exposure light and is capable of reducing EMF bias of a pattern of the light shielding film. The mask blank includes the light shielding film on a transparent substrate. The light shielding film has an optical density of 3.0 or greater to ArF exposure light. A refractive index n and an extinction coefficient k of the light shielding film to ArF exposure light simultaneously satisfy relationships defined by Formulas (1) and (2) below. n?0.0733×k2+0.4069×k+1.0083??Formula (1) n?29.316×k2?92.292×k+72.

Abstract: Metrology tools and methods are provided, which estimate the effect of topographic phases corresponding to different diffraction orders, which result from light scattering on periodic targets, and adjust the measurement conditions to improve measurement accuracy. In imaging, overlay error magnification may be reduced by choosing appropriate measurement conditions based on analysis of contrast function behavior, changing illumination conditions (reducing spectrum width and illumination NA), using polarizing targets and/or optical systems, using multiple defocusing positions etc. On-the-fly calibration of measurement results may be carried out in imaging or scatterometry using additional measurements or additional target cells.

Abstract: A method for forming a photomask is provided. The method includes forming a light blocking layer over a transparent substrate. The light blocking layer has a first portion, a second portion, and a connection portion. The method includes forming a mask layer over the first portion and the second portion of the light blocking layer. The method includes removing the connection portion. The method includes removing the mask layer. The second portion of the light blocking layer is removed during removing the mask layer, while the first portion remains. The method includes after removing the mask layer and the second portion, removing the third portion of the transparent substrate to form a first recess in the transparent substrate. The method includes forming a light blocking structure in the first recess.

Abstract: Embodiments of the present disclosure provide a splicing nano-imprint template, a repair method of a splicing seam thereof, and a manufacturing method thereof. The repair method of the splicing seam of the splicing nano-imprint template includes: providing a splicing nano-imprint plate, in which the splicing nano-imprint plate includes a base substrate and splicing modules that are positioned on the base substrate, a splicing seam is provided between adjacent spicing modules, and each of the splicing modules includes a unit pattern; forming a repair adhesive layer at least at the splicing seam; and performing a patterning process on the repair adhesive layer to form a repair module, in which the repair module includes the unit pattern.

Abstract: A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and treating the reflective layer by a laser beam to form a border region. The laser beam includes a pulse duration of less than about ten picoseconds.

Abstract: The inventive concept provides an optical proximity correction (OPC) method using a multi-OPC model that can reduce a runtime of an entire OPC method by reducing an iteration number of simulations using a complex OPC model, and a method of manufacturing a mask by using the OPC method. The OPC method using the multi-OPC model can generate a re-target pattern to be applied to a simple OPC model, and can perform a simulation by using a complex OPC model on a target pattern after performing a simulation using the simple OPC model on the re-target pattern. Therefore, an iteration number of simulations using the complex OPC model can be reduced and, accordingly, an entire execution time of the OPC method can be reduced.

Abstract: A wafer alignment system includes an imaging sub-system, a controller, and a stage. The controller receives image data for reference point targets and determines a center location for each of the reference point targets. The center location determination includes identifying sub-patterns within a respective reference point target and identifying multiple center location candidates for the respective reference point target. The step of identifying the multiple center location candidates for the respective reference point target includes: applying a model to each identified sub-pattern of the respective reference point target, wherein the model generates a hotspot for each sub-pattern that identifies a center location candidate for the respective reference point target.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from bismuth and iron.

Abstract: A photo mask for manufacturing a semiconductor device includes a first pattern extending in a first direction, a second pattern extending in the first direction and aligned with the first pattern, and a sub-resolution pattern extending in the first direction, disposed between an end of the first pattern and an end of the second pattern. A width of the first pattern and a width of the second pattern are equal to each other, and the first pattern and the second pattern are for separate circuit elements in the semiconductor device.

Abstract: The present disclosure provides an apparatus for mounting a pellicle to a photomask, including a presser, a pellicle stage facing the presser, and a flexible material layer between the presser and the pellicle stage, wherein the flexible material layer includes a compartment filled with gas.

Abstract: A reflective photomask blank (10) of a first aspect includes a substrate (1); a reflective layer (2) formed on the substrate (1); and a light absorbing layer (4) formed on the reflective layer (2). The light absorbing layer (4) includes a tin oxide film with an atomic ratio (O/Sn) of oxygen (O) to tin (Sn) being more than 1.50 and equal to or less than 2.0, and with a film thickness of 25 nm or more and 45 nm or less. Consequently, the shadowing effect of a reflective photomask for pattern transfer using extreme ultraviolet light as a light source is suppressed or reduced to improve the performance of transfer to a semiconductor substrate, and further, the cleaning resistance of the light absorbing layer is improved.

Abstract: A component of a lithographic apparatus, the component having a contaminant trap surface provided with recesses configured to trap contaminant particles and to reduce specular reflection of DUV radiation. The recesses can have at least one dimension less than or equal to about 2 ?m, desirably less than 1 ?m.

Abstract: A method for forming an extreme ultraviolet photolithography mask includes forming a reflective multilayer, forming a buffer layer on the reflective multilayer, and forming an absorption layer on the reflective multilayer. Prior to patterning the absorption layer, an outer portion of the absorption layer is removed. Photoresist is then deposited on the top surface of the absorption layer and on sidewalls of the absorption layer. The photoresist is then patterned, and the absorption layer is etched with a plasma etching process in the presence of the patterned photoresist. The presence of the photoresist on the sidewalls of the absorption layer during the plasma etching process helps to improve uniformity in the etching of the absorption layer during the plasma etching process.

Abstract: A micro semiconductor chip, a micro semiconductor structure, and a transfer device are provided. The micro semiconductor chip includes an epitaxial structure, a first-type electrode, a second-type electrode and a top light guide element. The epitaxial structure has a top surface, a bottom surface and a side surface. The top light guide element is disposed on the top surface of the epitaxial structure, wherein the top light guide element has a light extraction surface and a bottom surface, wherein the edge of the light extraction surface completely overlaps the edge of the bottom surface of the top light guide element. The light extraction surface is a curved surface, a combination of at least two curved surfaces, or a combination of at least one curved surface and at least one planar surface.

Abstract: Disclosed are reticle fabrication methods and semiconductor device fabrication methods. The reticle fabrication method includes performing a photolithography process on a test substrate using a first reticle having first patterns, measuring the test substrate to obtain measured images, designing a second reticle having second patterns, redesigning the second reticle based on a margin of the photolithography process, and manufacturing the redesigned second reticle. Redesigning the second reticle includes obtaining sample images from the measured images when the first patterns are the same as the second patterns, obtaining contour images that have contours of sample patterns in the sample images, overlapping the contours to obtain a contour overlay value, and comparing the contour overlay value with a reference value to determine defects of the second patterns.

Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.

Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate, a multilayer reflective film that reflects EUV light formed on the substrate, and a protective film formed on the multilayer reflective film. Reference marks are formed to a concave shape on the surface of the protective film. A surface layer of the reference marks contains an element that is the same as at least one of the elements contained in the protective film. A shrink region, where at least a portion of the plurality of films contained in the multilayer reflective film are shrunk, is formed at the bottom of the reference marks.

Abstract: A reflective mask blank includes a multilayer reflective film, and a pattern film to be partially etched when processing into a mask. The multilayer reflective film and the pattern film are placed on/above a substrate in this order from the substrate side. The pattern film includes an absorber film and a surface reflection enhancing film in this order from the substrate side. The relation of ((n?1)2+k2)1/2>((nABS?1)2+kABS2)1/2+0.03 is satisfied, nABS and kABS being a reflective index and an absorption coefficient of the absorber film at a wavelength of 13.53 nm, respectively, and n and k being a reflective index and an absorption coefficient of the surface reflection enhancing film at a wavelength of 13.53 nm, respectively.

Abstract: A system includes a plate configured for mounting of a reflective extreme ultra-violet (EUV) mask thereon and a zone plate configured to divide EUV light into zero-order light and first-order light and to pass the zero-order light and the first-order light to the reflective EUV mask. The system further includes a detector configured to receive EUV light reflected by the EUV mask and including a zero-order light detection region configured to generate a first image signal and a first-order light detection region configured to generate a second image signal, and a calculator configured to generate a compensated third image signal from the first image signal and the second image signal. The third image signal may be used to determine a distance between mask patterns of the EUV mask.

Abstract: A pellicle for extreme ultraviolet lithography and a method of manufacturing the pellicle for extreme ultraviolet lithography are provided. The pellicle for extreme ultraviolet lithography includes a pellicle layer having a specific (or, alternatively, predetermined) thickness, a frame on an edge area of the pellicle layer and supporting the pellicle layer, and a boron implantation layer located between the pellicle layer and the frame. The boron implantation layer is spaced by a specific (or, alternatively, predetermined) distance inward from an outer periphery of the pellicle layer.

Abstract: A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom % or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, the chamber comprising at least three targets, a first molybdenum target adjacent a first side of a silicon target and a second molybdenum target adjacent a second side of the silicon target.

Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from boron and nickel.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tellurium and germanium.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from copper and hafnium.

Abstract: An apparatus (e.g., a multi-spectral optical filter array, an optical wafer, an optical component) has an aperture mask printed directly thereon, the aperture mask including a positive or negative photoresist. The apparatus includes a substrate having the aperture mask printed on at least one of a light entrance surface or a light exit surface of the substrate so as to provide an aperture over a portion of the substrate. The photoresist from which the aperture mask is formed is photo-definable or non-photo-definable, and is deposited/printed to form the aperture mask on the substrate.

Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.

Abstract: A photomask includes a transparent substrate and a shielding pattern disposed on the transparent substrate. The shielding pattern includes shielding island structures. The shielding island structures are separated from and spaced apart from one another by dividing lanes. The dividing lanes expose the underlying transparent substrate. The photomask is configured for a light of a wavelength, and the dividing lanes reduce or hinder a transmission of the light of the wavelength.

Abstract: Methods, systems, and apparatuses are disclosed for radiation treatment of tumors based at least in part on patient-specific imaging information. The methods, systems and apparatuses include computer programs encoded on computer-readable media. The methods include acquiring imaging information relating to a target to be treated. The imaging information is non-anatomic imaging information relating to the target acquired from at least one imaging marker that reflects at least one of the metabolic, physiological and histological features of the target. The methods further include computing a radiation dose based at least on the imaging information.