Abstract: A photopolymerizable composition for the preparation of flexographic printing forms for corrugated board direct printing comprising a radial (polystyrene-polybutadiene)nX block copolymer, with X=Sn or Si and n=2 or 4, with an average molecular weight (Mw) of 80,000-300,000, a molecular weight distribution (Mw/Mn) of 1.00-1.40, a content of di- block copolymers of less than 15% by weight, which is extended with up to 50% by weight of a paraffinic oil.

Abstract: A chemical amplification type positive resist composition showing a high transmittance at a wavelength of 157 nm and manifesting excellent balance of abilities is provided which comprises a resin having polymerization units of the general formulae (I) and (II) and insoluble or poorly soluble itself in an alkali aqueous solution but becoming soluble in an alkali aqueous solution by the action of an acid; and an acid generating agent: 1

Abstract: A chemically amplified resist composition comprising (A) a polymer comprising recurring units containing at least one fluorine atom, (B) a compound of formula (1) wherein R1 and R2 are H, F or alkyl or fluorinated alkyl, at least one of R1 and R2 contains at least one fluorine atom, R3 is a single bond or alkylene, R4 is a n-valent aromatic or cyclic diene group, R5 is H or C(═O)R6, R6 is H or methyl, and n is 2, 3 or 4, (C) an organic solvent, and (D) a photoacid generator is sensitive to high-energy radiation and has improved sensitivity and transparency at a wavelength of less than 200 nm.

Abstract: This invention discloses compositions that can be polymerized/crosslinked imagewise upon exposure to ionization radiation such as x-ray, electron beam, ion beam, and gamma-ray. This invention also discloses methods of use for these compositions for microfabrication of ceramics, for stereolithography, and for x-ray, e-beam, and ion-beam lithography which can be used for photoresists.

Abstract: A heat-developable image recording material having excellent image preservability, comprises a support having thereon a photosensitive silver halide, a non-photosensitive organic silver salt, a reducing agent for silver ion and a specific binder.

Abstract: A copolymer of an acrylic monomer having at least one C6-20 alicyclic structure with a norbornene derivative or styrene monomer having a hexafluoroalcohol pendant is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, transparency and dry etching resistance, and is suited for lithographic microprocessing.

Abstract: Disclosed are photoresist compositions suitable for imaging with sub 200 nm wavelength radiation including ether linkages containing certain leaving groups. Also disclosed are methods of providing photoresist relief images using the photoresist compositions.

Abstract: Provided is a positive photoresist composition for use in the production of a semiconductor device, which ensures high resolution, reduced edge roughness of a line pattern and a small number of development defects. The positive photoresist composition comprises a resin having a specific silicon-containing group on the side chain, the solubility of which resin in an alkali developer increases under the action of an acid.

Abstract: The invention provides organic optical waveguide devices which employ perfluoropolymeric materials having low optical loss and low birefringence. An optical element has a substrate; a patterned, light transmissive perfluoropolymer core composition; and a light reflecting cladding composition on the pattern of the core. Writing of high-efficiency waveguide gratings is also disclosed.

Abstract: When selectively exposing a resist layer with vacuum ultraviolet rays for patterning into a predetermined shape, the present invention utilizes a polymer material constituting the resist layer and having at least one alicycle which is a saturated n-member ring (n is a number of carbon atoms constituting the ring and is an even number) and a fluorine substitution group in at least two carbon atoms constituting the alicycle and arranged alternately. Thus, by improving the light transmission ratio of the resist layer in the vacuum ultraviolet ray wavelength region, it becomes possible to perform a super-fine processing which cannot be obtained in the conventional method.

Abstract: A developer used for the formation of a resist pattern from a resist resin based on a halogenated alkylstyrene, wherein the developer is a mixture of a solvent regarded as a good solvent and a solvent regarded as a poor solvent for the resist resin based on a halogenated alkylstyrene. The developer is useful for the formation of photomasks, including various masks and reticles used to form various device patterns in a semiconductor product, a plasma display panel (PDP), a liquid crystal display (LCD) or the like. A method of forming a resist pattern using the developer is also disclosed. In addition, a photomask produced using the developer and the method is disclosed.

Abstract: The present invention relates to solvent-developable printing formulations useful for the manufacture of printing plates. In particular, the present invention provides formulations which exhibit markedly improved processing characteristics when deposited on a printing plate, such as reduced tack, increased image resolution, and/or improved mechanical properties, e.g., tensile strength, elongation. In accordance with another aspect of the invention, there are provided methods for the preparation of said formulations and methods for use thereof.

Abstract: Copolymers prepared by radical polymerization of a substituted norbornene monomer and a fluoromethacrylic acid, fluoromethacrylonitrile, or fluoromethacrylate comonomer are provided. The polymers are useful in lithographic phtoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and are thus useful in DUV lithographic photoresist compositions. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

Abstract: The present invention relates to a polymerizable coating composition suitable for the manufacture of printing plates developable on-press. The coating composition comprises (i) a polymerizable compound and (ii) a polymeric binder comprising polyethylene oxide segments, wherein the polymeric binder is selected from the group consisting of at least one graft copolymer comprising a main chain polymer and polyethylene oxide side chains, a block copolymer having at least one polyethylene oxide block and at least one non-polyethylene oxide block, and a combination thereof. The invention is also directed to an imageable element comprising a substrate and the polymerizable coating composition.

Abstract: An imaging member, such as a negative-working printing plate or on-press cylinder, can be prepared with a hydrophilic imaging layer comprised of a heat-sensitive hydrophilic polymer having ionic moieties and an infrared radiation sensitive dye having multiple sulfo groups. The heat-sensitive polymer and IR dye can be formulated in water or water-miscible solvents to provide highly thermal sensitive imaging compositions. In the imaging member, the polymer reacts to provide increased hydrophobicity in areas exposed to energy that provides or generates heat. For example, heat can be supplied by laser irradiation in the IR region of the electromagnetic spectrum. The heat-sensitive polymer is considered “switchable” in response to heat, and provides a lithographic image without wet processing.

Abstract: A positive photosensitive composition comprising (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, and (B-1) a resin having a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution and containing at least one structure represented by formulae (I), (II) and (III) as described in the specification or (B-2) a resin having at least one monovalent polyalicyclic group represented by formula (Ib) as described in the specification and a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution. The positive photosensitive composition containing the resin according to the present invention has high transmittance to far ultraviolet light particularly having a wavelength of 220 nm or less and exhibits good dry etching resistance.

Abstract: A copolymer of an acrylate monomer containing fluorine at &agr;-position with a fluorinated hydroxystyrene derivative is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, resolution, transparency, substrate adhesion and plasma etching resistance, and is suited for lithographic microprocessing.

Abstract: New photoresists are provided that are suitable for short wavelength imaging, including sub-200 nm such as 157 nm. In one aspect, resists of the invention comprise a fluorine-containing polymer, a photoactive component, and one or more additional components of an amine or other basic composition, a dissolution inhibitor compound, a surfactant or leveling agent, or a plasticizer material. In another aspect, resists of the invention contain a fluorine-containing resin and one or more photoacid generator compounds, particularly non-aromatic onium salts and imidosulfonates, and other non-ionic photoacid generator compounds.

Abstract: Disclosed are photoresist compositions suitable for imaging with sub 200 nm wavelength radiation including as polymerized units one or more monomers having an electronegative substituent and an ester group containing certain leaving groups. Also disclosed are methods of providing photoresist relief images using the photoresist compositions.

Abstract: A pattern formation material of this invention contains a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; R3, R4, R5 and R6 are a hydrogen atom or a fluorine atom, at least one of which is a fluorine atom; and R7 is a protecting group released by an acid.

Abstract: An acrylic resin containing hexafluoroisopropanol units has high transmittance to VUV radiation. A resist composition using the resin as a base polymer has high transparency, substrate adhesion, alkali developability and acid-elimination capability and is suited for lithographic microprocessing.

Abstract: Novel norbornene fluoroacrylate copolymers are provided. The polymers are useful in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and are thus useful in DUV lithographic photoresist compositions. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

Abstract: The present invention relates to a photo-curable polymer composition comprising: a) a first block copolymer comprising at least two blocks A of polymerised mono-vinyl aromatic monomer, and at least one block B of polymerised conjugated diene monomer, wherein the total polymerised mono-vinyl aromatic monomer content is in the range from 5 to 25% by weight of the block copolymer; b) 5 to 10% by weight of a second block copolymer having one block A of polymerised mono-vinyl aromatic monomer and at least one block B of polymerised conjugated diene monomer, wherein the total polymerised mono-vinyl aromatic monomer content is in the range from 5 to 50% by weight of the block copolymer, alkoxy or epoxy functional groups; and c) at least 5% by weight of a low molecular weight block copolymer, wherein the total of (b) and (c) is from 15% by weight to 80% by weight, the low molecular weight block copolymer having one block A of polymerised mono-vinyl aromatic monomer, and at least one block B of polymerised conjugated

Abstract: A base polymer having incorporated an ester group having a fluorinated alicyclic unit is provided. A resist composition comprising the polymer is sensitive to high-energy radiation, and has excellent sensitivity at a wavelength of less than 200 nm, significantly improved transparency by virtue of the fluorinated alicyclic units incorporated as well as satisfactory plasma etching resistance. The resist composition has a low absorption at the exposure wavelength of a F2 laser and is ideal as a micropatterning material in VLSI fabrication.

Abstract: Nitrile/fluoroalcohol-containing photoresists and associated processes for microlithography are described. These photoresists are comprised of a fluoroalcohol functional group and a nitrile-containing compound which together simultaneously impart high ultraviolet (UV) transparency and developability in basic media to these materials. The materials of this invention have high UV transparency, particularly at short wavelengths, e.g., 157 nm, which makes them highly useful for lithography at these short wavelengths.

Abstract: Anti-reflective coatings formed from new polymers and having high etch rates are provided. Broadly, the coatings are formed from a polymer binder and a light attenuating compound. The polymer binder has halogen atoms bonded thereto, preferably to functional groups on the polymer binder rather than to the polymer backbone. Preferred polymer binders comprise acrylic polymers while it is preferred that the halogenated functional groups of the polymer binders be dihalogenated, and more preferably trihalogenated, with chlorine, fluorine, or bromine atoms.

Abstract: Anti-reflective coatings formed from new polymers and having high etch rates are provided. Broadly, the coatings are formed from a polymer binder and a light attenuating compound. The polymer binder has halogen atoms bonded thereto, preferably to functional groups on the polymer binder rather than to the polymer backbone. Preferred polymer binders comprise acrylic polymers while it is preferred that the halogenated functional groups of the polymer binders be dihalogenated, and more preferably trihalogenated, with chlorine, fluorine, or bromine atoms.

Abstract: Provided are alkenyl ether-based monomers having multi-ring structure, and photosensitive polymers and resist compositions obtained from the same.

Abstract: A radiation sensitive resin composition including a photo-acid generator and an aliphatic polymer having one or more electron withdrawing groups adjacent to or attached to a carbon atom bearing a protected hydroxyl group, wherein the protecting group is labile in the presence of in situ generated acid is described. The radiation sensitive resin composition can be used as a resist suitable for image transfer by plasma etching and enable one to obtain an etching image having high precision with high reproducibility with a high degree of resolution and selectivity.

Abstract: A composition for forming a radiation absorbing coating which comprises an organic solvent, a radiation absorbing polymer or a radiation absorbing material dissolved therein and a crosslinking agent having blocked isocyanate groups. Since the isocyanate groups of the crosslinking agent have been blocked, the composition containing the crosslinking agent has excellent storage stability. When the composition applied to a substrate and then baked, crosslinking proceeds to give an antireflective coating, which does not intermix with a resist layer to be formed thereon by coating and is free from diffusion of a photo-generated acid thereinto from the resist layer. As a result, a resist image free from footing or scum can be formed.

Abstract: Novel norbornene fluoroacrylate copolymers are provided. The polymers are useful in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and are thus useful in DUV lithographic photoresist compositions. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

Abstract: Polymers comprising fluorinated vinyl alcohol units and having acid labile groups partially introduced are novel. Using such polymers, resist compositions featuring transparency to excimer laser light and alkali solubility are obtained.

Abstract: A resist material including a base polymer having a group for producing an active methylene group through decomposition in the presence of an acid and an acid generator for generating an acid through irradiation with light is applied on a substrate, thereby forming a resist film. The resist film is irradiated with exposing light of a wavelength of a 1 nm through 180 nm band for pattern exposure, and is developed with an alkaline developer after the pattern exposure, thereby forming a resist pattern.

Abstract: Copolymers prepared by radical polymerization of a substituted norbomene monomer and a fluoromethacrylic acid, fluoromethacrylonitrile, or fluoromethacrylate comonomer are provided. The polymers are useful in lithographic phtoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and are thus useful in DUV lithographic photoresist compositions. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

Abstract: A photosensitive resin composition containing a high molecular compound having at least a) a fluoro aliphatic group, and b) a group represented by formula —L—P (wherein L represents a divalent organic group connected to the skeleton of the high molecular compound, and P represents an aromatic group having a carboxyl group at the ortho-position).

Abstract: A polyvinyl acetal copolymer compound comprises the units A, B, C and D, wherein A is present in an amount of 0.5 to 30 wt.

Abstract: A photosensitive resin composition containing a high molecular compound having at least a) a fluoro aliphatic group, and b) a group represented by formula —L—P (wherein L represents a divalent organic group connected to the skeleton of the high molecular compound, and P represents an aromatic group having a carboxyl group at the ortho-position).

Abstract: A photosensitive resin composition containing a high molecular compound having at east a) a fluoro aliphatic group, and b) a group represented by formula —L—P (wherein L represents a divalent organic group connected to the skeleton of the high molecular compound, and P represents an aromatic group having a carboxyl group at the ortho-position).

Abstract: An improved light attenuating compound for use in the production of microdevices is provided. Broadly, the light attenuating compound is non-aromatic and can be directly incorporated (either physically or chemically) into photolithographic compositions such as bottom anti-reflective coatings (BARC) and contact or via hole fill materials. The preferred non-aromatic compounds of the invention are conjugated aliphatic and alicyclic compounds which greatly enhance the plasma etch rate of the composition. Furthermore, the light attenuating compounds are useful for absorbing light at shorter wavelengths. In one embodiment, the inventive compounds can be polymerized so as to serve as both the polymer binder of the composition as well as the light absorbing constituent.

Abstract: A composition for an anti-reflective coating or a light absorbing coating, which shows good light absorption for lights of 100-450 nm in wavelength, suffers neither footing nor intermixing, and has excellent storage stability and step coverage, and novel copolymers to be used therein.

Abstract: The present invention is directed to a high-performance irradiation sensitive resists and to a polymer resin composition useful for making the same. In accordance to the present invention, the polymer resin comprises a dual blocked polymer resins. Specifically, the dual blocked polymer resin comprises at least two different acid labile protecting groups which block some, but not all, of the polar functional groups of the polymer resin. a chemically amplified resist system comprising said dual blocked polymer resin; at least one acid generator; and a solvent is also provided herein.

Abstract: A monomer represented by the following general formula (m-1): wherein R is a group having an alicyclic skeleton, R2s may be the same or different and are individually hydrogen atom, halogen atom or monovalent organic group, X1 is a bivalent organic group containing a heteroatom, j is an integer of 0 to 3, and R1 is a group selected from the following groups, a monovalent organic group having Si (R1-1), and —(X2)k—R4—(X3)m—C(R6)3  (R1-2), wherein X2 and X3 are a bivalent organic group containing a heteroatom, k and m are an integer of 0 to 3, R4 is a bivalent alkyl group, R6s may be the same or different and are individually hydrogen atom, halogen atom or monovalent organic group.

Abstract: A photosensitive resin composition which comprises (1) a particulate copolymer comprising 10-99.8% by mole of the unit of (i) an aliphatic conjugated diene monomer, 0.1-30% by mole of the unit of (ii) a monomer having one polymerizable unsaturated group and an amino group, 0.1-20% by mole of the unit of (iii) a monomer having at least two polymerizable unsaturated groups and 0-40% by mole of the unit of (iv) a copolymerizable other monomer having one polymerizable unsaturated group, (2) a photopolymerizable unsaturated monomer and (3) a photopolymerization initiator typically represented by 9-fluorenone or 2-i-propylthioxanthone. A photosensitive resin composition is provided which can be developed by using water, has a low hardness and high resilience, and is excellent in balance of properties.

Abstract: A photosensitive lithographic printing plate in which press life, deletion performance, photosensitive layer removability and image reproducibility are compatible with one another, while retaining scumming prevention performance, which comprises an aluminum support hydrophilized after anodic oxidization, an intermediate layer provided thereon containing an alkali-soluble polymer adjusted in a number-average molecular weight (Mn) to the range of 300 to 5,000 by using an initiator in combination with a chain transfer agent in radical polymerization, and a photosensitive layer provided on the intermediate layer.

Abstract: A printing medium in cylindrical form consists of a dimensionally stable solid, partly hollow or hollow cylinder and a photopolymerizable crosslinkable cylinder layer which is applied in particular in part-layers by means of a coaxial coating apparatus and on which an IR radiation-sensitive layer is applied, preferably as a single layer, by means of a coaxial coating apparatus.

Abstract: A printing plate element is disclosed, comprising a substrate and a component layer containing a first material which is water-insoluble or capable of varying from being water-soluble to being water-insoluble at a prescribed temperature of not less than 60° C. and a second material which is water-soluble and has a melting point of 60 to 300° C. A method of preparing a printing plate is also disclosed, comprising imagewise exposure of the printing plate element and removing an unexposed area of the printing plate element with aqueous solution.

Abstract: A chemically amplified resist including base resin represented by a general formula [1], a radiation-sensitive acid generator; polystyrene acting as a filler and a solvent dissolving the resin, the acid generator and the filler; wherein a content of the resin is between 10 and 20% in weight with respect to the entire chemically amplified resist, contents of the acid generator and the filler are between 1 and 15% in weight and between 0.6 and 6.0% in weight, respectively, with respect to the resin, and a balance is the solvent. The chemically amplified resist having the excellent controllability with respect to dimensions and shapes can be obtained because a free volume of the chemically amplified resist is reduced by filling a free volume in the chemically amplified resist with the filler.

Abstract: Printing plate stock comprising a base, a photosensitive resin layer overlying the base, and a covering layer overlying the photosensitive resin layer, characterized in that said photosensitive resin layer comprises (i) a matrix phase comprising a hydrophobic polymer, and (ii) a dispersed phase, surrounded by said matrix phase, comprised of particles, wherein each of said particles comprises a hydrophobic polymer surrounded by a hydrophilic polymer, wherein said hydrophilic polymer is 5-30% wt of said photosensitive resin layer.

Abstract: A flexible, flame-retardant, aqueous processable, photoimageable resin composition for forming a permanent, protective coating film for printed circuitry and a multilayer photoimageable element containing a layer of the photoimageable resin composition in combination with a low tack photoimageable resin sublayer and a temporary support film are disclosed. The photoimageable resin composition has excellent aqueous developability and provides a cured coating film having good flexibility, adhesion, solvent resistance, surface hardness, thermal resistance, electrical insulating properties and flame retardancy.

Abstract: A positive type photoresist composition suitable for light in the wavelength region of 170 nm to 220 nm, high in sensitivity, excellent in adhesion and giving a good resist pattern profile, which comprises a resin having an ester group represented by the following general formula [I] in its molecule and a compound generating an acid by irradiation of an active light ray or radiation: wherein R1 represents a hydrogen atom, an alkyl group or a cycloalkyl group; and R2 and R3, which may be the same or different, each represents a hydrogen atom, an alkyl group, a cycloalkyl group or —A—R4, and R2 and R3 may combine together to form a ring, wherein R4 represents a hydrogen atom, an alkyl group or a cycloalkyl group, R4 and R2 or R3 may combine together to form a ring, and A represents an oxygen atom or a sulfur atom.