Abstract: Provided herein is a dual cure resin useful for the production of an object by additive manufacturing, comprising or consisting essentially of: (a) a photoinitiator; (b) not more than 5, 10 or 20 ppm of a polyurethane catalyst (e.g., tin, tertiary amine, bismuth, zinc, zirconium, or nickel catalysts); (c) a polyol; (d) free (i.e., unblocked) polyisocyanate; and (e) blocked polyisocyanate, the isocyanate groups of which are blocked by reaction with an amine (meth)acrylate blocking agent. Methods of making an object with the resin are also provided.

Abstract: A positive resist composition comprising a base polymer comprising recurring units having a nitrogen-containing tertiary ester structure exhibits a high sensitivity, high resolution, low edge roughness (LER, LWR) and small size variation, and forms a pattern of good profile after exposure and development.

Abstract: The invention relates to a method for selecting compounds which can be used as additives in photopolymer formulations for producing light holographic media, and to photopolymer formulations which contain at least one softener which are selected according to the claimed method. The invention also relates to the use of photopolymer formulations for producing holographic media.

Abstract: There are provided a method of forming a resist pattern includes: a step (1) in which a resist composition containing a base component (A) that generates base upon exposure and exhibits increased solubility in an alkali developing solution by the action of acid is applied to a substrate to form a resist film; a step (2) in which the resist film 2 is subjected to exposure; a step (3) in which baking is conducted after the step (2); and a step (4) in which the resist film 2 is subjected to an alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion 2b of the resist film 2 has been dissolved and removed, and the resist composition used in the step (1).

Abstract: A film includes base and a photosensitive layer formed on the base. The photosensitive layer substantially includes a first photosensitive agent, a second photosensitive agent, and a thermosol. The first photosensitive agent is water-soluble. The second photosensitive agent is an aromatic ketone compound or a benzoin ether compound. The method for manufacturing the film and the masking method using the film is also provided.

Abstract: A method for producing a semiconductor device includes the steps of: applying a composition for forming a resist underlayer film for EUV lithography including a novolac resin containing a halogen atom onto a substrate having a film to be fabricated for forming a transferring pattern and baking the composition so as to form a resist underlayer film for EUV lithography; and applying a resist for EUV lithography onto the resist underlayer film for EUV lithography, irradiating, with EUV through a mask, the resist underlayer film for EUV lithography and a film of the resist for EUV lithography on the resist underlayer film, developing the film of the resist for EUV lithography, and transferring an image formed in the mask onto the substrate by dry etching so as to form an integrated circuit device.

Abstract: A pattern forming method includes: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains: (A) a resin substantially insoluble in alkali; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a crosslinking agent; and (D) a solvent, a negative chemical amplification resist composition used in the method, and a resist film formed from the negative chemical amplification resist composition.

Abstract: A positive photosensitive siloxane composition comprising at least three types of following polysiloxanes (A), (B) and (C) obtained by hydrolyzing and condensing a silane compound represented by general formula (1) R1nSi (OR2)4-n, a diazonaphthoquinone derivative, and a solvent: a polysiloxane (A) such that if pre-baked the film thereof will be soluble in a 5 weight % TMAH aqueous solution and the solution rate of said film will be 1,000 ?/sec or less; a polysiloxane (B) such that if pre-baked the solution rate of the film thereof will be 4,000 ?/sec or more relative to a 2.38 weight % TMAH aqueous solution; and a polysiloxane (C) such that if pre-baked the solution rate of the film thereof will be between 200 and 3,000 ?/sec relative to a 2.38 weight % TMAH aqueous solution.

Abstract: Embodiments in accordance with the present invention encompass negative-tone, aqueous base developable, self-imagable polymer compositions useful for forming films that can be patterned to create structures for microelectronic devices, microelectronic packaging, microelectromechanical systems, optoelectronic devices and displays.

Abstract: A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen asking during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi(OR3)4-a??(A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.

Abstract: A positive resist composition comprises a polymer comprising repeat units having formula (1) or (2). Herein denotes an aromatic hydrocarbon group, R1 is H, methyl or trifluoromethyl, R2 is H, C1-C12 alkyl or aromatic hydrocarbon group, R3 is C1-C12 alkyl, or R2 and R3 may bond together to form a ring, and a is 1 or 2. When used in the ArF lithography, the resist composition exhibits high resolution. When used in the EB image writing for mask processing, the resist composition exhibits high resolution and sensitivity sufficient to comply with high-accelerating-voltage EB irradiation, and high etch resistance.

Abstract: According to one embodiment, an actinic-ray- or radiation-sensitive resin composition includes an arylsulfonium salt that when exposed to actinic rays or radiation, generates an acid, the arylsulfonium salt containing at least one aryl ring on which there are a total of one or more electron donating groups, the acid generated upon exposure to actinic rays or radiation having a volume of 240 ?3 or greater.

Abstract: The present disclosure provides a micro-composite material used in the fabrication of three-dimensional objects, and associated methods and systems. In one example, a micro-composite material used in the fabrication of a three-dimensional object can comprise micronized polymeric particles; a photocurable curing agent; and a dye present in the micro-composite material in an amount at from 0.0001 wt % to 0.1 wt %, the dye having a ?max between 350 nm and 800 nm.

Abstract: An actinic-ray- or radiation-sensitive resin composition comprises (A) a resin that when acted on by an acid, exhibits an increased solubility in an alkali developer, (B) a compound that when exposed to actinic rays or radiation, generates an acid, (C) a resin containing two or more resins (c) each having at least either a fluorine atom or a silicon atom, and (D) a solvent.

Abstract: The present application relates to a photoactive compound including an oxime ester group and a phosphonate group together, and a photosensitive resin composition comprising the same, the compound of the present application having excellent storage stability and high-temperature process characteristics.

Abstract: A positive photosensitive siloxane composition containing: a polysiloxane (Ia), which is obtained by hydrolyzing and condensing the silane compound represented by RSi(OR1)3 in general formula (1) and the silane compound represented by Si(OR1)4 in general formula (2) in the presence of a basic catalyst, and a pre-baked film of which has a dissolution rate of 1,000 ?/second or less in a 5 wt % TMAH aqueous solution; a polysiloxane (Ib), which is obtained by hydrolyzing and condensing at least the silane compound represented by general formula (1) in the presence of an acid or basic catalyst, and a pre-baked film of which has a dissolution rate of 100 ?/second or more in a 2.38 wt % TMAH aqueous solution; and a diazonaphthoquinone derivative and solvent.

Abstract: A positive resist composition includes: (A) a resin capable of increasing the solubility in an alkali developing solution by the action of an acid, including: (a1) a repeating unit selected from repeating units represented by following formulae (a1-1) to (a1-3); (a2) a repeating unit represented by a following formula (a2); and (a3) a repeating unit selected from repeating units represented by following formulae (a3-1) to (a3-4); (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation; (C) a resin having at least one of a fluorine atom and a silicon atom, and being insoluble in an alkali developing solution; and (D) a solvent, wherein the formulae above are defined in the specification.

Abstract: The present invention relates to a photoactive compound having a novel structure and a photosensitive resin composition including the same, and the photoactive compound according to the present invention has excellent sensitivity due to efficient absorption to a UV light source by including a nitro group and a phosphonate structure, and has excellent retention rate, mechanical strength, heat resistance, chemical resistance and developing resistance by improving solubility of the photosensitive resin composition by excellent compatibility of the phosphonate structure and a binder resin. Therefore, the photosensitive resin composition according to the present invention is useful to cure a column spacer, an overcoat, a passivation material and the like of a liquid crystal display device, and is useful in view of a high temperature process property.

Abstract: There is disclosed a resist top coat composition, used in a patterning process onto a photoresist film, wherein a resist top coat is formed by using the resist top coat composition onto a photoresist film formed on a wafer, and then, after exposure, removal of the resist top coat and development of the photoresist film are performed to effect the patterning on the photoresist film, wherein the resist top coat composition contains a truxene compound having phenol groups shown by the following general formula (1). As a result, there is provided a resist top coat composition not only having an effect from an environment to a resist film reduced and effectively shielding an OOB light, but also reducing film loss of a resist pattern and bridging between patterns and having an effect to enhance sensitivity of the resist; and a patterning process using this.

Abstract: An actinic-ray-sensitive or radiation-sensitive resin composition which is capable of improving line edge roughness (LER) and inhibiting pattern collapse, a resist film and a pattern forming method each using the same, a method for preparing an electronic device, and an electronic device are provided. The actinic-ray-sensitive or radiation-sensitive resin composition contains: (A) a resin having repeating units having a structure represented by any one of the following general formulae (I-1) to (I-3), and repeating units containing at least one selected from the group consisting of a lactone structure, a sultone structure, and a cyano group; and (B) a compound that generates an acid by irradiation with actinic rays or radiations.

Abstract: Provided is a pattern forming method making it possible to obtain a pattern with less scums and watermark defects. The pattern forming method includes the steps of forming a film from an actinic-ray- or radiation-sensitive resin composition includes a resin (A) that exhibits an increased solubility in an alkali developer when acted on by an acid, a compound (B) that generates an acid when exposed to actinic rays or radiation, and a resin (C) containing at least one of a fluorine atom and a silicon atom, exposing the film to light, and developing the exposed film using a tetramethylammonium hydroxide solution whose concentration is less than 2.38 mass %.

Abstract: Disclosed are a photosensitive resin composition for a color filter including (A) a colorant including a dye represented by the following Chemical Formula 1 and/or a dye represented by the following Chemical Formula 2, wherein in the following Chemical Formulae 1 and 2, each substituent is the same as described in the detailed description; (B) an acrylic-based binder resin; (C) a photopolymerizable monomer; (D) a photopolymerization initiator; and (E) a solvent, and a color filter using the same.

Abstract: A positive type resist composition for use in liquid immersion exposure comprises: (A) a resin having a monocyclic or polycyclic cycloaliphatic hydrocarbon structure, the resin increasing its solubility in an alkali developer by an action of acid; (B) a compound generating acid upon irradiation with one of an actinic ray and a radiation; (C) an alkali soluble compound having an alkyl group of 5 or more carbon atoms; and (D) a solvent.

Abstract: A negative pattern is formed by coating a resist composition onto a substrate, the resist composition comprising a polymer comprising recurring units having an acid labile group-substituted hydroxyl group, an acid generator, an onium salt of perfluoroalkyl ether carboxylic acid, and an organic solvent, prebaking, exposing, baking, and developing in an organic solvent such that the unexposed region of film is dissolved away and the exposed region of film is not dissolved. In image formation via positive/negative reversal by organic solvent development, the resist film is characterized by a high dissolution contrast between the unexposed and exposed regions.

Abstract: A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen ashing during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi(OR3)4-a??(A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.

Abstract: A positive resist composition comprising a polymer having carboxyl groups substituted with an acid labile group having formula (1) exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal edge roughness. In formula (1), A is —(CR22)m—, B is —(CR52)n—, R2 and R5 are hydrogen or alkyl, m and n are 1 or 2, R3 is alkyl, alkenyl, alkynyl or aryl, R6 is alkyl, alkoxy, alkanoyl, alkoxycarbonyl, hydroxyl, nitro, aryl, halogen, or cyano, and p is 0 to 4.

Abstract: A radiation-sensitive composition containing 1 to 80% by weight of a solid component and 20 to 99% by weight of a solvent. The solid component contains a compound B which has (a) a structure derived from a polyphenol compound A by introducing an acid-dissociating group to at least one phenolic hydroxyl group of the polyphenol compound A which is synthesized by a condensation between a di- to tetrafunctional aromatic ketone or aromatic aldehyde each having 5 to 36 carbon atoms with a compound having 1 to 3 phenolic hydroxyl groups and 6 to 15 carbon atoms, and (b) a molecular weight of 400 to 2000. The composition containing the compound B is useful as an acid-amplified, non-polymeric resist material, because it is highly sensitive to radiation such as KrF excimer lasers, extreme ultraviolet rays, electron beams, and X-rays, and provides resist patterns with a high resolution, high heat resistance, and high etching resistance.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition, and a resist film and a pattern forming method using the composition are provided, the composition including (A) a compound capable of decomposing by the action of an acid to increase the solubility of the resin (A) in an alkali developer; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a basic compound; and (D) a specific compound containing at least two specific alicyclic hydrocarbon groups each substituted with a hydroxyl group.

Abstract: The present invention relates to a negative photoresist composition and a patterning method for device in which a photoresist pattern having a high sensitivity with a good reverse taper profile can be formed not only to realize an effective patterning of various thin films but also to facilitate removal of the photoresist pattern after the patterning. The photoresist composition comprises an alkali-soluble binder resin; a halogen-containing first photo-acid generator; a triazine-based second photo-acid generator; a cross-linking agent having an alkoxy structure; and a solvent.

Abstract: A monomer has the Formula I: wherein R1, R2, and R3 are each independently a C1-30 monovalent organic group, and R1, R2, and R3 are each independently unsubstituted or include a halogen, nitrile, ether, ester, ketone, alcohol, or a combination comprising at least one of the foregoing functional groups; R4 includes H, F, C1-4 alkyl, or C1-4 fluoroalkyl; A is a single bond or a divalent linker group, wherein A is unsubstituted or substituted to include a halogen, nitrile, ether, ester, ketone, alcohol, or a combination comprising at least one of the foregoing functional groups; m and n are each independently an integer of 1 to 8; and x is 0 to 2n+2, and y is 0 to 2m+2.

Abstract: A sulfonium salt having a 4-fluorophenyl group is introduced as recurring units into a polymer comprising hydroxyphenyl (meth)acrylate units and acid labile group-containing (meth)acrylate units to form a polymer which is useful as a base resin in a resist composition. The resist composition has a high sensitivity, high resolution and minimized LER.

Abstract: A chemical amplification resist composition contains: (A) a polymer compound having a phenolic hydroxyl group and a group formed by substituting a substituent for a hydrogen atom of a hydroxyl group in a phenolic hydroxyl group and satisfying the following (a) to (c) at the same time: (a) the polydispersity is 1.2 or less, (b) the weight average molecular weight is from 2,000 to 6,500, and (c) the glass transition temperature (Tg) is 140° C. or more.

Abstract: A resist composition containing a base component (A) which generates acid upon exposure, and exhibits changed solubility in a developing solution under the action of acid, wherein the base component (A) contains a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-0) shown below and a structural unit (a6) that generates acid upon exposure. In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R1 represents a sulfur atom or an oxygen atom, R2 represents a single bond or a divalent linking group, and Y represents a hydrocarbon group in which a carbon atom or a hydrogen atom may be substituted with a substituent.

Abstract: A resist composition includes: a crosslinking material that is crosslinked in the presence of an acid; an acid amplifier; and a solvent.

Abstract: A water-soluble resin composition for forming fine patterns comprising water-soluble polymer represented by Chemical Formula 1 as below and the first water-soluble solvent, is coated and heated on a photoresist layer having at least one contact hole to reduce a size of the at least one contact hole. (In Chemical Formula 1, each of R1, R2, R3 and R5 independently represents an alkyl group of C1-30 or an cyclo alkyl group of C3-30 which respectively have one selected from the group consisting of hydrogen, an ether group, an ester group, a carbonyl group, an acetal, an epoxy group, a nitril group, an amine group, and an aldehyde group; each of R4, R6, R7 and R8 independently represents hydrogen or a methyl group; n represents an integer of 0 to 5; a represents a real number of 0.05 to 0.5; each of b, c and d respectively represents a real number of 0 to 0.7; and a+b+c+d=1).

Abstract: A method is described for the direct photochemical modification and micro-patterning of polymer surfaces, without the need to use a photoresist. For example, micropatterns of various functional chemical groups, biomolecules, and metal films have been deposited on poly(carbonate) and poly(methyl methacrylate) surfaces. These patterns may be used, for example, in integrated electronics, capture elements, or sensing elements in micro-fluidic channels.

Abstract: A cyclic compound represented by formula (1): wherein L, R1, R?, and m are as defined in the specification. The cyclic compound of formula (1) is highly soluble to a safety solvent, highly sensitive, and capable of forming resist patterns with good profile. Therefore, the cyclic compound is useful as a component of a radiation-sensitive composition.

Abstract: A salt represented by the formula (a): wherein Q1 and Q2 each independently represent a fluorine atom etc., X1 represents a single bond etc., X2 represents a single bond etc., Y1 represents a C3-C6 alicyclic hydrocarbon group etc., with the proviso that —X2—Y1 group has one or more fluorine atoms, and Z+ represents an organic counter cation, and a photoresist composition comprising the salt represented by the formula (a) and a resin comprising a structural unit having an acid-labile group and being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid.

Abstract: A polymer obtained from copolymerization of a recurring unit having a carboxyl group and/or phenolic hydroxyl group substituted with an acid labile group with a methacrylate having a phenolic hydroxyl-bearing pyridine is useful as a base resin in a positive resist composition. The resist composition comprising the polymer is improved in contrast of alkali dissolution rate before and after exposure, acid diffusion control, resolution, and profile and edge roughness of a pattern after exposure.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit represented by the following formula (1), a resist film using the composition, and a pattern forming method.

Abstract: Disclosed is a method of making polysiloxane and polysilsesquioxane based hardmask respond to radiations with positive tone and negative tone simultaneously. Unradiated films are insoluble in developers, showing positivity tone. Radiated films are insoluble in developers as well, showing negative tone. Only half-way radiated films are soluble in developers. The dual-tone photo-imageable hardmask produces splitted patterns. Compositions of dual-tone photo-imageable hardmask based on the chemistry of polysiloxane and polysilsesquioxanes are disclosed as well. Further disclosed are processes of using photo-imageable hardmasks to create precursor structures on semiconductor substrates with or without an intermediate layer.

Abstract: There is provided a resist composition suitable for forming a microlens which is excellent in transparency, heat resistance, and sensitivity characteristics, excellent in solubility in a developer, and as the result thereof has high resolution. A positive resist composition comprising; a component (A): an alkali-soluble polymer; a component (B): a compound having an organic group to be photolyzed to generate an alkali-soluble group; a component (C): a crosslinkable compound of Formula (1): [where R1, R2, and, R3 are independently a C1-6 alkylene group or oxyalkylene group which are optionally branched; and E1, E2, and E3 are independently a group containing a structure of Formula (2) or Formula (3): (where R4 is a hydrogen atom or a methyl group)]; and a component (D): a solvent.

Abstract: Thick film photoresist compositions are disclosed.

Abstract: A resin composition which, in forming a fine pattern by a heat treatment of a resist pattern formed by using a photoresist, can be applied onto the resist pattern, can cause the resist pattern to smoothly shrink by heat treatment, and can be easily washed away by a treatment with an alkaline aqueous solution, and a method for efficiently forming a fine resist pattern using the resin composition are provided. The resin composition comprises a resin containing a hydroxyl group, a crosslinking component, and an alcohol solvent containing water in an amount of 10 wt % or less for the total solvent, wherein the alcohol in the alcohol solvent is a monovalent alcohol having 1 to 8 carbon atoms.

Abstract: Lithography methods on a semiconductor substrate are described. The methods include coating a resist layer on the substrate, wherein the resist layer comprises a resist polymer configured to turn soluble to a base solution in response to reaction with an acid, and a switchable polymer that includes a base soluble polymer having a carboxylic acid, hydroxyl, lactone, or anhydride functional group, performing a pre-exposure bake on the resist layer, exposing the resist-coated substrate, and developing the exposed substrate with a developing solution.

Abstract: A copolymer has formula: wherein R1-R5 are independently H, C1-6 alkyl, or C4-6 aryl, R6 is a fluorinated or non-fluorinated C5-30 acid decomposable group; each Ar is a monocyclic, polycyclic, or fused polycyclic C6-20 aryl group; each R7 and R8 is —OR11 or —C(CF3)2OR11 where each R11 is H, a fluorinated or non-fluorinated C5-30 acid decomposable group, or a combination; each R9 is independently F, a C1-10 alkyl, C1-10 fluoroalkyl, C1-10 alkoxy, or a C1-10 fluoroalkoxy group; R10 is a cation-bound C10-40 photoacid generator-containing group, mole fractions a, b, and d are 0 to 0.80, c is 0.01 to 0.80, e is 0 to 0.50 provided where a, b, and d are 0, e is greater than 0, the sum a+b+c+d+e is 1, l and m are integers of 1 to 4, and n is an integer of 0 to 5. A photoresist and coated substrate, each include the copolymer.

Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) containing a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-0) shown below (R1 represents a sulfur atom or an oxygen atom; R2 represents a single bond or a divalent linking group; and Y represents an aromatic hydrocarbon group or an aliphatic hydrocarbon group having a polycyclic group, provided that the aromatic hydrocarbon group or the aliphatic hydrocarbon may have a carbon atom or a hydrogen atom thereof substituted with a substituent.

Abstract: The present invention provides photoacid generators for use in chemically amplified resists and lithographic processes using the same.

Abstract: A positive resist composition comprises: (A) a resin of which solubility in an alkali developer increases under an action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a resin having at least one of a fluorine atom and a silicon atom; and (D) a solvent; and a pattern forming method using the positive resist composition.

Abstract: A resist material and methods using the resist material are disclosed herein. An exemplary method includes forming a resist layer over a substrate, wherein the resist layer includes a polymer, a photoacid generator, an electron acceptor, and a photodegradable base; performing an exposure process that exposes portions of the resist layer with radiation, wherein the photodegradable base is depleted in the exposed portions of the resist layer during the exposure process; and performing an developing process on the resist layer.