Abstract: Embodiments in accordance with the present invention provide waveguide structures and methods of forming such structures where core and laterally adjacent cladding regions are defined. Some embodiments of the present invention provide waveguide structures where core regions are collectively surrounded by laterally adjacent cladding regions and cladding layers and methods of forming such structures.

Abstract: There is provided a polymerizable composition comprising (A) a binder polymer, (B) a polymerizable compound having an unsaturated group, and (C) a diaryl iodonium salt having at least two electron-donating groups. The iodonium salt (C) preferably has three or more electron-donating groups. This polymerizable composition is useful as a recording layer of a negative type planographic printing plate precursor.

Abstract: A positive resist composition for producing MEMS using an electron beam, the composition comprising a resin component (A) that displays increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid upon irradiation, wherein the resin component (A) is a resin prepared by protecting a portion of all the hydroxyl groups within an alkali-soluble novolak resin with acid-dissociable, dissolution-inhibiting groups.

Abstract: UV curable compositions, polymeric photoinitiators and precursors therefor are described.

Abstract: The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

Abstract: UV curable compositions, polymeric photoinitiators and precursors therefor are described.

Abstract: A positive resist composition comprising: (A) a resin showing an increase in the solubility in an alkali developer by the action of an acid; (B) a compound being capable of generating an acid when irradiated with an actinic ray or a radiation; (C) a resin having a silicon-containing repeating unit of a specific structure and being stable to acids but insoluble in an alkali developer; and (D) a solvent; and a pattern making method using the same.

Abstract: A positive resist composition, which comprises: (A) a resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a resin having a repeating unit represented by formula (C) as defined in the specification; and (D) a solvent, wherein a content of the resin as the component (C) is from 0.1 to 20 mass % based on a solid content of the positive resist composition, and a pattern forming method using the same.

Abstract: A photosensitive paste is provided with which a member for a display panel having superior visibility can be manufactured with simple steps, and with the photosensitive paste including a soft magnetic powder, a glass powder, and a photosensitive organic component, in which the mass ratio of the soft magnetic powder (A) to the glass powder (B) is in the range of 20/80 to 70/30.

Abstract: A photosensitive composition comprising (A) a resin that is decomposed by the action of an acid to increase solubility in an alkali developing solution, (B) a compound that generates an acid upon irradiation of an actinic ray or radiation, and (C1) a compound having a molecular weight of 1,000 or less and containing an aliphatic ring and an aromatic ring, and a photosensitive composition comprising (A) a resin that is decomposed by the action of an acid to increase solubility in an alkali developing solution, (B) a compound that generates an acid upon irradiation of an actinic ray or radiation, and (C2) a resin containing a hydroxystyrene unit; and a pattern forming method using these photosensitive composition.

Abstract: An alkali-developable black photosensitive resin composition for forming a light-shielding barrier wall which comprises, as indispensable components, (A) a carboxyl group-containing photosensitive prepolymer, (B) a photopolymerization initiator, (C) a black pigment, and (D) light-transmitting fine particles. By the use of this composition, light-shielding barrier walls (11) having sufficient light-shielding properties and a height of not less than 20 ?m can be formed by photolithography, without causing undercutting during development. In a preferred embodiment, the black pigment (C) is a metal oxide, preferably iron oxide, and the fine particles (D) are inorganic fine particles having a refractive index of 1.40-1.90, preferably silica.

Abstract: A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing a fluorinated norbornane group, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

Abstract: The main object of the present invention is to provide a photocatalyst composition and a photocatalyst containing layer showing a high activity in a short period of time, and a pattern formed body using the photocatalyst containing layer. To attain the object, the invention provides a photocatalyst composition containing at least a photocatalyst, characterized by including a portion with the signal intensity of the electron spin resonance spectrum derived from the hydroxy radical increased to 1,000 times or more in 1 second within 600 seconds of the start of the ultraviolet ray irradiation at the time of measuring the electron spin resonance spectrum while irradiating the ultraviolet ray.

Abstract: The resist material contains a photo-acid generator having an absorption peak to exposure light having a wavelength of less than 300 nm, and a second photo-acid generator having an absorption peak to exposure light having a wavelength of 300 nm or more. The method for forming a resist pattern comprises a step for selectively exposing which exposes a coating film of the resist material to an exposure light having a wavelength of less than 300 nm, and a step for selectively exposing by using an exposure light having a wavelength of 300 nm or more. The semiconductor device comprises a pattern formed by the resist pattern. The method for forming a semiconductor device comprises a step for forming a resist pattern on an underlying layer by the aforementioned manufacturing method, and a step for patterning the underlying layer by etching using the resist pattern as a mask.

Abstract: A photoresist composition capable of forming a high resolution pattern without an additional heating process includes an alkali-soluble phenol polymer in an amount of 10 to 70 parts by weight, including at least one unit of Formula 1, a photo-acid generator in an amount of 0.5 to 10 parts by weight, a dissolution inhibitor in an amount of 5 to 50 parts by weight, including at least one unit of Formula 2, and a solvent in an amount of 10 to 90 parts by weight, wherein the amounts of the foregoing components is based on a total of 100 parts by weight of alkali-soluble phenol polymer, photo-acid generator, dissolution inhibitor, and solvent, and wherein Formulas 1 and 2 have the structures: wherein R is a methyl group, wherein R1, R2 and R3 are the same or different and are hydrogen or t-butyl vinyl ether protective groups.

Abstract: The invention provides positive-acting chemically-amplified photoresist compositions that can provide excellent lithographic performance as well as significantly enhanced storage stability. In one aspect, photoresist compositions are provided that comprise a solvent that is free of hydroxy groups (i.e. non-hydroxylic solvent), a resin binder and a photoactive compound that exhibits enhanced and long-term solubility in the solvent. In a further aspect, resists are provided that are formulated in a hydroxyl-containing solvent such as ethyl lactate and that contains a sulfonium salt photoactive compound that includes a sulfonate counter anion that can provide enhanced storage stability for the resist.

Abstract: High silicon-content resin composition that can be used to form thin film thermosets, useful in forming low k dielectric constant materials and as well as hard mask materials with anti-reflective properties for the photolithography industry are disclosed.

Abstract: The present invention relates to novel photoacid generators.

Abstract: A photoresist composition includes a cyclic compound, a photoacid generator, and an organic solvent. The cyclic compound includes any one selected from the group consisting of moieties having chemical structures represented by the formulae (1), (2), (3) and (4) set forth herein, and at least one moiety having the chemical structure represented by the formula (9) set forth herein.

Abstract: Photoacid generators generate sulfonic acids of formula (1a) or (1c) upon exposure to high-energy radiation. R1—COOCH(CF3)CF2SO3?H+??(1a) R1—O—COOCH(CF3)CF2SO3?H+??(1c) R1 is a C20-C50 hydrocarbon group having a steroid structure. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.

Abstract: The present invention provides a resist pattern thickening material which can thicken a resist pattern and form a fine space pattern, exceeding exposure limits of exposure light used during patterning. The resist pattern thickening material contains a resin and a phase transfer catalyst. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

Abstract: The present invention aims to provide a pattern forming material that is capable of suppressing generation of wrinkles and static electric charge on a substrate in a lamination step in which the pattern forming material is laminated on the substrate as well as capable of forming a fine and precise pattern; a pattern forming apparatus provided with the pattern forming material; and a pattern forming process using the pattern forming material. To this end, the present invention provides a pattern forming material having a support, a photosensitive layer, and a protective film, the photosensitive layer and the protective film being formed in this order on the support, wherein the number of fish-eyes each having an area of 2,000?m2 or more and a maximum height measured from the film surface of 1?m to 7?m residing in the protective film is 50/m2 to 1,000/m2.

Abstract: Disclosed is a composition of a negative-type photosensitive polyimide which is solvent soluble, which is excellent in adhesiveness, heat resistance, mechanical properties and in flexibility, which shows characteristics of alkali-soluble highly sensitive negative-type photoresist upon irradiation with light, The composition according to the present invention comprises a photo radical initiator and a solvent-soluble polyimide which shows negative-type photosensitivity in the presence of the photo radical initiator.

Abstract: The invention relates to a reaction development patterning process wherein a photo resist layer masked by a desired pattern is irradiated using ultraviolet light and this layer is subsequently washed using a solvent solution containing alkali characterized by said photo resist layer comprising a condensation type polymer containing in the main chain carbonyl groups (C?O) bonded to hetero atoms and a photo acid generating agent and said alkali being an amine. This reaction development patterning process is characterized by being able to use as a photo resist target resins containing bonds having low reactivity toward nucleophilic reagents, for example, condensation type polymers containing any one of bonds such as carbonate, ester, urethane and amide.

Abstract: A radiation-sensitive resin composition suitable as a chemically-amplified resist useful for microfabrication utilizing various types of radiation such as deep ultraviolet rays represented by a KrF excimer laser or ArF excimer laser. The radiation-sensitive resin composition of the present invention comprises: (A) a resin comprising a recurring unit (1-1) shown by the following formula (I-1) and (B) a radiation-sensitive acid generator such as 1-(4-n-butoxynaphthyl)tetrahydrothiophenium nonafluoro-n-butanesulfonate. The radiation-sensitive resin composition may further comprise (C) an acid diffusion controller such as phenylbenzimidazole.

Abstract: A photoresist composition, e.g., a positive acting resist, for use in the formation of circuit patterns and the like on printed circuit boards and the like circuitized substrates, the photoresist composition including a quantity of silver therein in a sufficient amount to substantially prevent bacteria formation within said composition. A method of making the composition is also provided.

Abstract: A pattern forming method comprising: coating a resist composition on a substrate; adjusting a rotational speed of the substrate within a range of 500 to 1,500 rpm so that a film thickness of the resist composition coated is adjusted; and subjecting the resist composition to drying, exposure and development, wherein the resist composition includes: (A) a compound capable of generating an acid upon irradiation with one of actinic rays and radiation; (B) a resin of which dissolution rate in an alkali developer increases under the action of an acid; (C) a mixed solvent; and (D) a surfactant, and the mixed solvent (C) includes at least one member selected from a group A of solvents and at least one member selected from a group B of solvents, or includes at least one member selected from the group A of solvents and at least one member selected from a group C of solvents: Group A: propylene glycol monoalkyl ether carboxylates, Group B: propylene glycol monoalkyl ethers, alkyl lactates, acetic acid esters, one of cha

Abstract: There is disclosed a resist composition which shows high sensitivity and high resolution on exposure to high energy beam, provides reduced Line Edge Roughness because swelling at the time of development is reduced, provides minor amounts of residue after development, has excellent dry etching resistance, and can also be used suitably for the liquid immersion lithography; and a patterning process using the resist composition. There can be provided a resist composition which comprises, at least, a polymer including repeating units represented by the following general formulae (a) and (b).

Abstract: The present invention is a photosensitive element including a support and a photosensitive resin composition layer composed of a photosensitive resin composition containing (A) a binder polymer, (B) a photopolymerizable compound, and (C) a photopolymerization initiator, wherein, the photosensitive resin composition contains a thioxanthone-based compound represented by the following general formula (I) as the component (C), and when the parts by weight of the thioxanthone-based compound relative to 100 parts by weight for the total weight of the component (A) and the component (B) is taken to be P, and the film thickness of the photosensitive resin composition layer is taken to be Q (?m), then R, which is the product of P and Q, satisfies the condition of the following formula (1). In the following general formula (I), R1to R8 represent a hydrogen atom, halogen atom or hydrocarbon group. 25.5?R?79.

Abstract: An initiator composition and infrared radiation-sensitive composition include an onium cation and a boron-containing anion as well as a metallocene. These compositions can be used to provide negative-working imageable elements that can be imaged and developed to provide lithographic printing plates that have desired imaging speed, excellent run length, and shelf life without the need for a post-exposure baking step and oxygen barrier overcoat.

Abstract: A positive resist composition comprises: (A) a resin capable of increasing its solubility in an alkali developer by action of an acid and not containing a silicon atom; (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation, (C) a silicon atom-containing resin having at least one group selected from groups (X) to (Z), (X) an alkali-soluble group, (Y) a group capable of decomposing by action of an alkali developer to increase the solubility of resin (C) in an alkali developer, (Z) a group capable of decomposing by action of an acid to increase the solubility of resin (C) in an alkali developer; and (D) a solvent.

Abstract: The present invention provides a resist composition which enables uniformly thickening a resist pattern with a resist pattern thickening material, regardless of the direction, spacing variations of the resist pattern, and the components of the resist pattern thickening material and enables forming a fine space pattern of resist, exceeding exposure limits of light sources of exposure devices at low cost, easily, and efficiently. The resist composition contains an alicyclic compound (melting point: 90° C. to 150° C.), and a resin. The method for manufacturing a semiconductor device includes forming a resist pattern on a surface of a workpiece to be processed by using a resist composition and applying a resist pattern thickening material on the surface of the workpiece so as to cover the surface of the resist pattern to thicken the resist pattern; and patterning the surface of the workpiece by etching thereof using the thickened resist pattern as a mask.

Abstract: A photosensitive resin composition comprising (A) a binder polymer, (B) a photopolymerizing compound with an ethylenic unsaturated bond, (C) a photopolymerization initiator and (D) a compound represented by the following general formula (1) or (2). [Chemical Formula 1] [wherein X1, X2, X3, X4, X5 and X6 each independently represent a CH group, CCH3 group, CC2H5 group or nitrogen, Y1, Y2, Y3 and Y4 each independently represent optionally substituted aryl, and Y5 represents optionally substituted arylene].

Abstract: Novel aromatic sulfonium salt compounds of general formula (I), photo-acid generators comprising the same, and photo-polymerizable compositions containing the same, capable of providing stereolithographic resin compositions which do not suffer from the hindrance to curing by oxygen, can easily give shaped articles having desired sizes by virtue of the high accuracy thereof in curing, can attain a satisfactory curing depth owing to the high sensitivity thereof for radiant energy and can be employed for wide usage, such as photoresist and ink for foods-packing medium, since the release of benzene is suppressed; and a stereolithographic process, using said stereolithographic resin composition.

Abstract: A positive resist composition is provided comprising (A) a resin component having a carboxylic acid moiety protected with an acetal protective group which is decomposable under the action of an acid, wherein in the carboxylic acid moiety protected with an acetal protective group, deprotection occurs not by way of ?-elimination, and (B) a photoacid generator. The resist composition exhibits a high resolution when processed by ArF lithography.

Abstract: A negative thick film photoresist composition with improved alkali developability is provided. The composition comprises: (A) a resin component containing (a) from 61 to 90% by weight of a structural unit derived from a cyclic alkyl (meth)acrylate ester, and (b) a structural unit derived from a radical polymerizable compound containing a hydroxyl group, (B) a polymerizable compound containing at least one ethylenic unsaturated double bond, (C) a photopolymerization initiator, and (D) an organic solvent.

Abstract: A photoresist composition includes about 10 to about 70% by weight of a binder resin including a phenol-based polymer, about 0.5 to about 10% by weight of a photo-acid generator, about 1 to about 20% by weight of a cross-linker, about 0.1 to about 5% by weight of a dye and about 10 to about 80% by weight of a solvent. The photoresist composition may be applied to, for example, a method of manufacturing a TFT substrate.

Abstract: An image forming medium includes a substrate and an imaging layer coated on or impregnated into the substrate, where the imaging layer includes a photoacid generator and an acid-base indicator. In the image forming medium, irradiation of the imaging layer causes the photoacid generator to generate an acid that reacts with the acid-base indicator to produce an image.

Abstract: The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

Abstract: A photocurable and thermosetting resin composition comprising (A) a carboxylic acid-containing photosensitive resin having at least one carboxyl group and at least two ethylenically unsaturated bonds in its molecule, (B) a filler, (C) a photopolymerization initiator, (D) a diluent, and (E) a compound having at least two cyclic ether groups and/or cyclic thioether groups in its molecule, wherein the difference between the refractive index of the carboxylic acid-containing photosensitive resin (A) and that of the filler (B) is 0.20 or less, and the average grain diameter of the filler (B) is 0.5 to 0.05 ?m, and wherein the photo-curing and thermosetting resin composition can be developed by a diluted alkali solution, and can be pattern-formed by a laser oscillation light source of 350 to 420 nm in wavelength.

Abstract: An image forming medium includes a substrate and an imaging layer coated on or impregnated into the substrate, where the imaging layer includes a photobase generator and a coupling agent. In the image forming medium, irradiation of the imaging layer cause the photobase generator to generate a base that reacts with the coupling agent to produce an image.

Abstract: Imaging layers, image recording media, and methods of preparation of each, are disclosed.

Abstract: An image forming medium includes a substrate, and an imaging layer coated on or impregnated into said substrate, wherein the imaging layer includes an imaging composition including a photochromic or photochromic-thermochromic material dissolved or dispersed in a solvent or polymeric binder, wherein the imaging composition is imageable by light of a first wavelength and erasable in a short time period by a combination of heat and light of a second wavelength such that simultaneous erase with heat and light of the second wavelength is faster than erase by heat alone and exhibits a reversible transition between a colorless and a colored state.

Abstract: Sulfonate salts have the formula: R1COOCH2CH2CF2CF2SO3?M+ wherein R1 is alkyl, aryl or hetero-aryl, M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oxime sulfonates and sulfonyloxyimides derived from these salts are effective photoacid generators in chemically amplified resist compositions.

Abstract: Sulfonate salts have the formula: CF3—CH(OH)—CF2SO3?M+ wherein M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Because of inclusion within the molecule of a hydroxyl group which is a polar group, the sulfonic acids are effective for restraining the length of acid diffusion through hydrogen bond or the like. The photoacid generators that generate these sulfonic acids perform well during the device fabrication process including coating, pre-baking, exposure, post-exposure baking, and developing steps. The photoacid generators are little affected by water left on the wafer during the ArF immersion lithography.

Abstract: The present invention relates to a photosensitive composition comprising a triazine-based photoactive compound containing oxime ester. The photosensitive composition according to the present invention has good sensitivity, retention rate, mechanical strength, heat resistance, chemical resistance and developing durability since it contains, as photopolymerization initiator, a compound having an oxime ester group and a triazine group in one molecule and thus effectively absorbs UV radiation. Therefore, the photosensitive composition according to the present invention is advantageous not only in curing of materials for color filters, resin black matrixes, column spacers, overcoats and passivation films of liquid crystal displays, but also in high temperature process characteristics.

Abstract: An image forming medium includes a substrate and an imaging layer coated on or impregnated into the substrate, where the imaging layer includes a photobase generator and an acid-base indicator. In the image forming medium, irradiation of the imaging layer causes the photobase generator to generate a base that reacts with the acid-base indicator to produce an image.

Abstract: A positive resist composition, which comprises: (A) a resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a resin having a repeating unit represented by formula (C) as defined in the specification; and (D) a solvent, wherein a content of the resin as the component (C) is from 0.1 to 20 mass % based on a solid content of the positive resist composition, and a pattern forming method using the same.

Abstract: The object of the present invention is to provide a resist pattern thickening material, etc. which, when coated over a resist pattern formed of ArF resist material, etc., can efficiently thicken the resist pattern such as lines and spaces pattern, etc. regardless of the composition of ArF resist material, and the like; which can easily control the thickening amount of resist pattern by process condition; and which can easily and efficiently form a fine space pattern beyond the exposure (resolution) limits of light sources of the exposure devices at low cost. The resist pattern thickening material of the present invention comprises a solubilizer which melts the resist pattern at the temperature near its melting point and- a water-soluble element. The process for forming a resist pattern of the present invention comprises forming a resist pattern and coating a resist pattern thickening material of the present invention over the surface of the resist pattern.

Abstract: A photoactive compound is used in combination with a photosensitizer, represented by the following formula (1): A-[(J)m-(X-Pro)]n??(1) wherein A represents a hydrophobic unit comprising at least one kind of hydrophobic groups selected from a hydrocarbon group and a heterocyclic group, J represents a connecting group, X-Pro represents a hydrophilic group protected by a protective group Pro which is removable by light exposure, m represents 0 or 1, and n represents an integer of not less than 1. The protective group Pro may be removable by light exposure in association with the photosensitizer (especially, a photo acid generator), or may be a hydrophobic protective group. The hydrophilic group may be a hydroxyl group or a carboxyl group. The photoactive compound has high sensitivity to a light source of short wavelength beams, for resist application, therefore, the photoactive compound is advantageously used for forming a pattern with high resolution.