Abstract: A pattern width slimming-inhibiting method of photoresist pattern using photoresist composition containing thermal acid generator. When the formed pattern is heated, a thermal generator generates acid during the heating process, and a cross-linking reaction occurs to photoresist compositions, thereby preventing pattern width slimming due to SEM-beam for CD measurement.

Abstract: A composition useful for a thick-film negative resist comprising a mixture of at least one epoxidized polyfunctional bisphenol A formaldehyde novolak resin and at least one photoacid generator in a coating solvent, a majority amount of said coating solvent being cyclopentanone.

Abstract: A method of forming a resist pattern from a chemically amplified positive radiation sensitive resin composition. The film thickness of an unexposed portion of a resist film formed from the chemically amplified positive radiation sensitive resin composition after wet development is 100 to 400 Å smaller than that before wet development. Alternatively, a resist film formed from the chemically amplified positive radiation sensitive resin composition is wet developed at both a temperature and a time enough to ensure that the film thickness of an unexposed portion of the resist film after wet development is 100 to 400 Å smaller than that before wet development. A resist film which is formed from a chemically amplified positive radiation sensitive resin composition and experiences a 100 to 400 Å reduction in the film thickness of an unexposed portion by wet development is useful as a resist film for forming a resist pattern.

Abstract: The present invention provides a radiation sensitive resin composition which comprises (A) a resin represented by a copolymer comprising recurring units represented by the general formulae (1) or (2) as shown below, and (B) a radiation sensitive acid-generator. The radiation sensitive resin composition has an excellent storage stability and the resist produced from the composition is a chemically amplifiable type sensitive to radiations represented by fartificial ultraviolet rays.

Abstract: A positive photoresist composition comprises (A) a resin containing a specific repeating structural unit such as norbornene structure, the resin being capable of increasing the solution velocity in an alkali developer by the action of acid; and (B) a compound capable of generating an acid by irradiation with one of an actinic ray and radiation.

Abstract: A radiation sensitive mixture essentially consists of

Abstract: The present invention relates to a photoresist composition containing Photo Base Generator (PBG), more specifically, to a photoresist composition which comprises (a) photoresist resin, (b) photo acid generator, (c) organic solvent and further (d) photo base generator. The photo base generator is preferably selected from benzyloxycarbonyl compound of Chemical Formula 1 or O-acyloxime compound of Chemical Formula 2, which prevents a slopping pattern formation and a severe I/D Bias occurrence. wherein, R′, R1 to R6 are defined in accordance with the Specification.

Abstract: A negative resist composition comprises:

Abstract: A positive resist composition comprising:

Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.

Abstract: The present invention provides photoresist polymers and photoresist compositions comprising the same. The photoresist polymer is represented by the following Chemical Formula 5. Photoresist compositions containing the polymers of the present invention have superior transmittance at 157 nm wavelength, etching resistance, heat resistance, and adhesiveness. In addition, photoresist compositions of the present invention can be developed easily in 2.38 wt % aqueous TMAH solution, and are therefore suitable for lithography processes using a 157 nm wavelength-light source for fabricating a minute circuit of a high integration semiconductor device: wherein R, R*, X, Y, V, W, i, j, w, x, y and z are as described herein.

Abstract: A positive resist composition is provided which comprises a resin having 2-alkyl-2-adamantyl (meth)acrylate polymerization unit represented by the following formula (I): wherein R1 represents hydrogen or methyl and R2 represents an alkyl, and being insoluble or barely soluble in alkali, but being converted to soluble in alkali by the action of an acid; and an acid generator represented by the following formula (V): wherein Q1, Q2 and Q3 independently represent hydrogen, a hydroxyl group, an alkyl having 1 to 6 carbon atoms or an alkoxy having 1 to 6 carbon atoms, and n is an integer of 4 to 8. The composition exhibits good resolution upon exposure by a ArP excimer laser and has little substrate dependency.

Abstract: The present invention provides novel polymers and photoresist compositions that comprise the polymers as a resin binder component. The photoresist compositions of the invention can provide highly resolved relief images upon exposure to short wavelengths, including 193 nm and 248 nm. The resists of the invention are also useful or imaging at other wavelengths such as 365 nm. Polymers of the invention include those that comprise a photogenerated acid-labile unit that is ester group that comprises an alkyl moiety having about 5 or more carbon atoms and at least two secondary, tertiary or quaternary carbon atoms. The alkyl moiety of the ester group can be a noncyclic or single ring alicyclic group. The carboxyl (C═O(O)) oxygen of the ester group is often preferably directly bonded to a quaternary carbon atom.

Abstract: A positive photosensitive composition is disclosed which comprises a compound generating an acid upon irradiation with actinic rays or a radiation and a resin having groups which decompose by the action of an acid to enhance solubility in an alkaline developing solution, said resin being obtained by reacting an alkali-soluble resin having phenolic hydroxyl groups with at least one specific enol ether compound under acid conditions in a specific organic solvent. The positive photosensitive composition shows improved discrimination between nonimage areas and image areas, has high sensitivity, high resolving power, and high heat resistance, suffers little change in performance with the lapse of time from exposure to light to heat treatment (PED), and is free from defects, e.g., development defects.

Abstract: The present invention relates to a photo acid generator which has high transparency to exposure light and also has excellent heat stability in a photoresist composition for lithography using far ultraviolet light, especially light of ArF excimer laser.

Abstract: A coated abrasive article comprises a backing, a first binder on the backing, and a plurality of abrasive particles in the first binder. The first binder precursor is an energy-curable preferably, melt-processable resin containing an epoxy resin, an ethylene-vinyl acetate copolymer, and a curing agent for crosslinking the epoxy resin that is cured to provide a crosslinked make coating. The above binder precursors of the invention are preferably free of homopolymers and copolymers of olefinic monomers. In another aspect, the invention also describes an energy curable first binder precursor containing an epoxy resin, an ethylene-vinyl acetate copolymer, a polyfunctional acrylate component and a curing agent for crosslinking the epoxy resin that is cured to provide a crosslinked make coating. The invention also relates to a method of producing such coated abrasive articles and a surface-treated backing material.

Abstract: Deactivated aromatic amines are useful to improve shelf life and performance of acid-catalyzed photoresist compositions without adverse interaction with radiation-sensitive acid generator components in said resist. The compositions are especially useful in photolithography processes used in forming integrated circuits and other miniaturized components.

Abstract: A radiation-sensitive polymer and a chemical amplification resist composition based on the polymer, which can be easily controlled in sensitivity by regulating the content and kind of the carboxylic acid-grafted norbornene derivatives in the matrix polymer and is superior in adherence to substrate and dry etch resistance, so that it can be formed into resist patterns improved in transparency, photosensitivity and resolution by use of KrF or ArF excimer lasers. The polymer is represented by the formula I: wherein, X is an acid-dissociable grafted norbornene derivative selected from the group consisting of the formulas II and III; Y is a carboxylic acid-grafted norbornene derivative represented by the formula IV, and l, m, n and o each are a repeating number not more than 0.5, satisfying the condition that l+m+n+o=l and 0.4≦o≦0.

Abstract: The present invention relates to a novel photoresist composition sensitive in the deep ultraviolet region, where the photoresist performance is not adversely impacted by basic contaminants in the processing environment of the photoresist. The novel photoresist comprises a polymer, a photoactive compound, a basic compound that is a sulfonium or iodonium compound that is essentially nonabsorbing at the exposure wavelength of the photoresist, and a solvent composition. The invention further relates to a process for imaging such a photoresist in the deep ultraviolet region.

Abstract: This invention relates to a chemically amplified positive photoresist composition comprising a multi copolymer copolymer whose repeating units is represented by the following formula I, a low molecular additive represented by the following formula 2 or 3, an acid generator and a solvent wherein the repeating units comprising X and Y are independent monomers, respectively, selected from the group consisting of the following formulae (II), (III) and (IV):

Abstract: Disclosed is a chemically amplified radiation sensitive composition containing a hydroxystyrene resin and an onium salt precursor which generates a fluorinated alkanesulfonic acid as a photoacid generator, wherein the photoacid generator is a sulfonium or iodonium salt of a fluorinated alkane sulfonic acid, represented by formula (I): Y+ASO3−  (I) wherein A represents CF3CHFCF2 or CF3CF2CF2CF2; and Y represents wherein R1, R2, R3, R4, and R5 each independently represent an alkyl group, a monocyclic or bicyclic alkyl group, a cyclic alkylcarbonyl group, a phenyl group, a naphthyl group, an anthryl group, a peryl group, a pyryl group, a thienyl group, an aralkyl group, or an arylcarbonylmethylene group, or any two of R1, R2, and R3 or R4 and R5 together represent an alkylene or an oxyalkylene which forms a five- or six-membered ring together with the interposing sulfur or iodine, said ring being optionally condensed with aryl groups.

Abstract: The polymers of the invention are characterized by having at least one pendent ester group having a tertiary carbon atom attached to the ester oxygen atom in which at least one substituent of the tertiary carbon atom comprises at least one silicon atom. The polymer compositions of the present invention are useful as resist materials for lithography, in particular as the imaging layer or as the top imaging layer in a bilayer resist scheme for use in the manufacture of integrated circuits. The silicon-containing tertiary alcohols and esters of the present invention enable the preparation of polymers with relatively high silicon content.

Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition used in the photolithographic patterning works in the manufacture of semiconductor devices capable of giving an excellently patterned resist layer with remarkably small film thickness reduction by the development treatment with an aqueous alkaline developer solution in the areas unexposed to patternwise exposure to light. Characteristically, the resinous ingredient in the composition, which is formulated in combination with a radiation-sensitive acid-generating agent and imparted with an increase in the solubility in an alkaline developer solution, is a ternary copolymeric resin consisting of the monomeric units of (a) hydroxystyrene units, (b) styrene units and (c) 1-alkylcyclohexyl (meth)acrylate units each in a specified molar fraction.

Abstract: A positive resist laminate which comprises a substrate, a first resist layer and a second resist layer,

Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.

Abstract: A chemical amplification type positive resist composition which is good in resolution, provide a good pattern profile under exposure using light of wavelength of 220 nm or shorter even when applied on a basic substrate or a low reflectance substrate and which comprises an acid generator comprising an aliphatic sulfonium salt represented by the following formula (I): wherein Q1 represents an alkyl group, Q2 represents an alkyl or a residue of an alicyclic hydrocarbon and m represents an integer of 1 to 8; and onium salt selected from triphenylsulfonium salts represented by the following formula (IIa) and diphenyliodonium salts represented by the following formula (IIb): wherein Q3, Q4, Q5, Q6 and Q7each independently represent a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, and q and p represent a integer of 4 to 8; and (2) a resin which has a polymerization unit with a group unstable to an acid, and i

Abstract: The present invention provides a positive electron beam or X-ray resist composition containing (a) a compound which generates an acid by the irradiation with radiation and (b) a compound having a cationic polymerizable function. The positive electron beam or X-ray resist composition is high sensitivity, has high resolution, can provide an excellent rectangular pattern profile, and is excellent in PCD stability and PED stability.

Abstract: A chemical amplifying type positive resist composition which provides a resist pattern having an exceedingly improved line edge roughness, and is excellent in various resist performances such as dry etching resistance, sensitivity and resolution; and comprises:

Abstract: A photo resist composition contains a polymer resin, a first photo acid generator (PAG) requiring a first dose of actinic energy to generate a first photo acid, and a photo base generator (PBG) requiring a second dose of actinic energy, different from the first dose, to generate a photo base. The amounts and types of components in the photo resist are selected to produce a hybrid resist image. Either the first photo acid or photo base acts as a catalyst for a chemical transformation in the resist to induce a solubility change. The other compound is formulated in material type and loading in the resist such that it acts as a quenching agent. The catalyst is formed at low doses to induce the solubility change and the quenching agent is formed at higher doses to counterbalance the presence of the catalyst. Accordingly, the same frequency doubling effect of conventional hybrid resist compositions may be obtained, however, either a line or a space may be formed at the edge of an aerial image.

Abstract: A radiation-sensitive resin composition comprising (A) resin which comprises a recurring unit (1) shown by the following formula (1) and either or both of a recurring unit (2) shown by the following formula (2) and a recurring unit (3) shown by the following formula (3), and (B) a photoacid generator shown by the following formula (4).

Abstract: A positive radiation-sensitive composition comprising:

Abstract: An image recording medium is disclosed which comprising: an acid generating agent capable of generating an acid by the action of heat or an acid, which is represented by the following formula (1); and a compound of causing variation in the absorption region of from 360 to 900 nm by the intramolecular or intermolecular reaction triggered by the action of an acid: W1OP  (1) wherein W1 represents a residue of an acid represented by W1OH, and P represents an acid-sensitive substituent capable of splitting off at a temperature of 150° C. or less due to catalysis by W1OH.

Abstract: A stabilizer for thermally stabilizing an organic borate salt represented by formula (1) is disclosed, comprising a compound having one or two nitrogen-containing 5- or 6-membered heterocyclic ring having a double bond within the ring, a compound having a primary, secondary or tertiary amino group, or a compound having a thiol group. Also disclosed are a photosensitive composition comprising the stabilizer, an organic borate salt and if desired, a sensitizing dye or further a bisimidazole compound; a polymerizable composition comprising the photosensitive composition having added thereto at least one monomer having one or more ethylenically unsaturated bond and if desired, a high molecular polymer or further a pigment; and a colored pattern formed by using the polymerizable composition.

Abstract: The invention provides new photoresist compositions that contain a resin binder and a blend of non-ionic and ionic PAGS. Preferred resists of the invention preferably are imaged with 248 nm and/or 193 nm exposure wavelengths to provide highly resolved small dimension features.

Abstract: An improved, aqueous base developable, high resolution photoresist composition for use in deep UV and compatable with high base strength aqueous developers is disclosed. The composition of the present invention comprises of a phenolic functional methacrylate polymer resin, a crosslinker selected from glycoluril derivatives capable of reacting with there resins under acid catalysis, a photoacid generator and an organic solvent. The composition of the present invention is particularly useful for production of negative tone images of high resolution (less than 0.125 micrometer).

Abstract: Provided is a positive photoresist composition which comprises (A) a resin which contains a repeating unit represented by formula (I) shown below and a repeating unit represented by formula (II) shown below and whose solubility in an alkaline developing solution increases by the action of an acid and (B) a compound which generates an acid upon irradiation with an actinic ray or radiation, 1

Abstract: A chemical amplified photoresist composition comprising a photosensitive polymer containing the following structure unit of formula (II): Wherein R is hydrogen or C1-C4 alkyl group; R′ is C1-C4 alkyl group; n is an integer of 2, 3, 4, 5 or 6. This chemical amplified photoresist composition can be applied to general lithography processes, especially in 193 nm lithography and the patterns formed from the photoresist exhibit excellent resolution and photosensitivity.

Abstract: The invention provides new photoresist compositions that contain a resin binder and a blend of photoacid generators. Photoacid generator blends of the invention produce photoacids that differ in acid strength and/or size.

Abstract: Radiation-sensitive compositions comprising

Abstract: A resist composition contains a base resin, a photoacid generator, and a solvent. The photoacid generator is a sulfonium salt of formula (1).

Abstract: Radiation-sensitive compositions comprising (a1) a cationically or acid-catalytically polymerisable or crosslinkable compound or (a2) a compound that increases its solubility in a developer under the action of acid; and (b) at least one diaryliodonium salt of formula I X is branched C3-C20alkyl or C3-C8cycloalkyl; X1 is hydrogen, linear C1-C20alkyl, branched C3-C20alkyl or C3-C8cycloalkyl; with the proviso that the sum of the carbon atoms in X and X1 is at least 4; Y is linear C1-C10alkyl, branched C3-C10alkyl or C3-C8cycloalkyl; A− is a non-nucleophilic anion, selected from the group (BF4)−, (SbF6)−, (PF6)−, (B(C6F5))4−, C1-C20alkylsulfonate, C2-C20haloalkylsulfonate, unsubstituted C6-C10arylsulfonate, camphorsulfonate, and C6-C10arylsulfonate substituted by halogen, NO2, C1-C12alkyl, C1-C12halo-alkyl, C1-C12alkoxy or by COOR1; and R1 is C1-C20alkyl, phenyl, benzyl; or phenyl mono- or poly-substituted by C1-C12alkyl, C1-C12alkoxy or by halogen; with the

Abstract: A photosensitive composition comprising: an acid-decomposable compound having at least one substituent which is decomposed by an acid, forming a product which reacts with alkali solution and forms —COO− or —SO3−; and a compound which generates an acid when exposed to a chemical radiation. If necessary, the composition further comprises an alkali-soluble polymer. The acid-decomposable compound is one which is represented by the following formula (1), and the alkali-soluble polymer has a softening point of 150° C. or more and an average molecular weight of 3000 to 8000. When used as photoresist, the composition can form a fine resist pattern.

Abstract: The present invention provides photoresist monomers, photoresist polymers derived from the same, processes for producing such photoresist polymers, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions.

Abstract: A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains acid labile groups either pendant to the polymer or to a dissolution inhibitor that is combined with the polymer. The acid labile groups significantly decrease the solubility of the polymer in a solution of aqueous base. The resist material also contains a photoacid generator and a radical scavenger. The radical scavenger reduces the amount of aromatic compounds outgassed from the resist during the lithographic process. A film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material. The image introduced into the resist material is developed using conventional techniques, and the resulting pattern is then transferred into the underlying substrate.

Abstract: There are provided a photosensitive polymer having a copolymer of alkyl vinyl ether and a resist composition containing the same.

Abstract: A positive-tone radiation-sensitive resin composition comprising: (A) a low molecular weight compound having at least one amino group in which the nitrogen atom has at least one hydrogen atom bonded thereto and at least one of the hydrogen atoms is replaced by a t-butoxycarbonyl group, (B) a photoacid generator, and (C-1) a resin insoluble or scarcely soluble in alkali which is protected by an acid-dissociable group and becomes soluble in alkali when the acid-dissociable group dissociates or (C-2) an alkali-soluble resin and an alkali solubility control agent is disclosed. Also disclosed is a negative-tone radiation-sensitive resin composition comprising the low molecular weight compound (A), the photoacid generator (B), an alkali-soluble resin (D), and a compound capable of crosslinking with the alkali-soluble resin in the presence of an acid(E).

Abstract: A monomer represented by the following general formula (m-1): wherein R is a group having an alicyclic skeleton, R2s may be the same or different and are individually hydrogen atom, halogen atom or monovalent organic group, X1 is a bivalent organic group containing a heteroatom, j is an integer of 0 to 3, and R1 is a group selected from the following groups, a monovalent organic group having Si (R1-1), and —(X2)k—R4—(X3)m—C(R6)3  (R1-2), wherein X2 and X3 are a bivalent organic group containing a heteroatom, k and m are an integer of 0 to 3, R4 is a bivalent alkyl group, R6s may be the same or different and are individually hydrogen atom, halogen atom or monovalent organic group.

Abstract: There are disclosed a light-sensitive composition which comprises (A) a polymer having a phenyl group substituted by a vinyl group at a side chain, (B) a photopolymerization initiator and (C) a sensitizer which sensitizes the photo-polymerization initiator, or a light-sensitive composition which comprises (A′) a polymer, the above-mentioned (B) and (C), and (D) a monomer having at least two phenyl groups each of which is substituted by a vinyl group in the molecule of the monomer; and a method of forming a relief image which comprises coating the light-sensitive composition as mentioned above on a support, exposing the composition by exposure or scanning exposure and developing the same to form a relief image on the support.

Abstract: The invention provides new photoresist compositions that contain a resin binder and a blend of non-ionic and ionic PAGS. Preferred resists of the invention preferably are imaged with 248 nm and/or 193 nm exposure wavelengths to provide highly resolved small dimension features.

Abstract: An image recording medium is disclosed which comprising: an acid generating agent capable of generating an acid by the action of heat or an acid, which is represented by the following formula (1); and a compound of causing variation in the absorption region of from 360 to 900 nm by the intramolecular or intermolecular reaction triggered by the action of an acid: