Cationic Or Anionic Patents (Class 430/914)
  • Photoresist compositions for short wavelength imaging
    Publication number: 20030027077
    Abstract: New photoresists are provided that are suitable for short wavelength imaging, including sub-200 nm such as 157 nm. In one aspect, resists of the invention comprise a fluorine-containing polymer, a photoactive component, and one or more additional components of an amine or other basic composition, a dissolution inhibitor compound, a surfactant or leveling agent, or a plasticizer material. In another aspect, resists of the invention contain a fluorine-containing resin and one or more photoacid generator compounds, particularly non-aromatic onium salts and imidosulfonates, and other non-ionic photoacid generator compounds.
    Type: Application
    Filed: March 20, 2002
    Publication date: February 6, 2003
    Applicant: Shipley Company, L.L.C.
    Inventors: Anthony Zampini, Charles R. Szmanda, Gary N. Taylor, James F. Cameron, Gerhard Pohlers
  • Photoacid generators and photoresists comprising same
    Publication number: 20030027061
    Abstract: This invention relates to new photoacid generator compounds and photoresist compositions that comprise such compounds. In particular, the invention relates to photoacid generator compounds that generate an &agr;,&agr;-difluoroalkyl sulfonic acid upon exposure to activating radiation. Positive- and negative-acting chemically amplified resists that contain such PAGs are particularly preferred.
    Type: Application
    Filed: November 3, 2001
    Publication date: February 6, 2003
    Applicant: Shipley Company, L.L.C.
    Inventors: James F. Cameron, Thomas M. Zydowsky
  • Bottom resist
    Patent number: 6514663
    Abstract: A bottom resist for the two-layer technique includes a phenolic base polymer, a thermoactive compound which above a temperature of 100° C. releases a sulfonic acid, and a solvent.
    Type: Grant
    Filed: April 28, 2000
    Date of Patent: February 4, 2003
    Assignee: Infineon Technologies AG
    Inventors: Stefan Hien, Michael Sebald
  • Photoresist monomers, polymers thereof and photoresist compositions containing the same
    Publication number: 20030022101
    Abstract: Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist polymers include a repeating unit comprising the photoresist monomer of Formula 1 as a comonomer and the photoresist compositions containing the same have excellent etching resistance, heat resistance and adhesiveness to a wafer, and are developable in aqueous tetramethylammonium hydroxide (TMAH) solutions. In addition, the photoresist compositions have a low light absorbance at 157 nm wavelength, and thus are suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device.
    Type: Application
    Filed: February 21, 2002
    Publication date: January 30, 2003
    Inventors: Geun Su Lee, Jae Chang Jung, Ki Soo Shin
  • Photoresist monomers, polymers thereof and photoresist compositions containing the same
    Publication number: 20030022100
    Abstract: Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist polymer includes a repeating unit comprising the photoresist monomer of Formula 1 as a comonomer and the photoresist composition containing the same have excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device.
    Type: Application
    Filed: January 22, 2002
    Publication date: January 30, 2003
    Inventors: Geun Su Lee, Jae Chang Jung, Ki Soo Shin
  • Negative resist composition
    Patent number: 6511783
    Abstract: A chemical amplification system negative resist composition for an electron beam and/or an X-ray, which is excellent in sensitivity and resolution and has a rectangular profile, comprising an alkali-soluble resin, a radiation-sensitive acid generator and a crosslinking agent which initiates crosslinking by an acid, in which the crosslinking agent is a phenol derivative having 3 to 5 benzene ring atomic groups in a molecule, having a molecular weight of 1,200 or less, and having two or more hydroxymethyl and/or alkoxymethyl groups in all in the molecule, the groups being combined with at least any of the benzene ring atomic groups.
    Type: Grant
    Filed: August 10, 2000
    Date of Patent: January 28, 2003
    Assignee: Fuji Photo Film Co., Ltd.
    Inventor: Kazuya Uenishi
  • Chemically amplified positive resist composition and patterning method
    Patent number: 6511785
    Abstract: A chemically amplified positive resist composition comprising a base resin and a compound containing two to six functional groups, specifically alkenyloxy, acetal and ortho-ester groups in the molecule is suitable for forming a contact hole pattern by the thermal flow process.
    Type: Grant
    Filed: November 13, 2000
    Date of Patent: January 28, 2003
    Assignee: Shin Etsu Chemical Co., Ltd.
    Inventors: Katsuya Takemura, Kenji Koizumi, Tatsushi Kaneko, Toyohisa Sakurada
  • Photoresist monomers containing fluorine-substituted benzylcarboxylate and photoresist polymers comprising the same
    Publication number: 20030017412
    Abstract: Photoresist monomers, photoresist polymers prepared therefrom, and photoresist compositions using the polymers are disclosed. More specifically, photoresist polymers comprising a photoresist monomer containing fluorine-substituted benzylcarboxylate represented by Formula 1, and a composition comprising the polymer are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in aqueous tetramethylammonium hydroxide (TMAH) solution. And, the present photoresist composition is suitable to form a fine pattern using deep ultraviolet light source such as VUV (157 nm), since the composition has low light absorbance at 193 nm and 157 nm wavelength.
    Type: Application
    Filed: March 27, 2002
    Publication date: January 23, 2003
    Inventors: Geun Su Lee, Jae Chang Jung, Ki Soo Shin
  • Photoresist polymer and composition having nitro groups
    Publication number: 20030013036
    Abstract: Photoresist polymers having nitro groups (—NO2), and photoresist compositions containing the same.
    Type: Application
    Filed: January 4, 2002
    Publication date: January 16, 2003
    Inventors: Geun Su Lee, Jae Chang Jung, Ki Soo Shin
  • Positive-working resist composition
    Publication number: 20030008241
    Abstract: A positive-working resist composition comprising (A) a specific resin which has an aliphatic cyclic hydrocarbon group and enhances in the dissolution rate in an alkaline developing solution by an action of an acid, and (B) a specific compound generating an acid by irradiation of actinic ray or radiation. The composition is excellent in the resolving power and the exposure margin, and can be suitably used for micro-photofabrication using far ultraviolet rays, particularly ArF eximer laser beams.
    Type: Application
    Filed: March 11, 2002
    Publication date: January 9, 2003
    Applicant: FUJI PHOTO FILM CO., LTD.
    Inventors: Kenichiro Sato, Kunihiko Kodama
  • Photoresist monomers, polymers thereof and photoresist compositons containing the same
    Publication number: 20030003379
    Abstract: Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device.
    Type: Application
    Filed: February 20, 2002
    Publication date: January 2, 2003
    Inventors: Geun Su Lee, Jae Chang Jung, Ki Soo Shin
  • Photosensitive lithocholate derivative and chemically amplified photoresist composition containing the same
    Patent number: 6497987
    Abstract: A photosensitive compound, and a chemically amplified photoresist composition containing the photosensitive compound, maintain transparency even when exposed to a short-wavelength light source of 193 nm or below, and exhibit improved adhesion to an underlying film or substrate, improved wettability to a developing solution and improved resistance to dry etching. The photosensitive compound includes a carboxylic acid protected with a protective group capable of being deprotected with an acid and has a hydroxy at position No. 3 substituted with a hydrophillic aliphatic compound or a hydrophillic alicyclic compound.
    Type: Grant
    Filed: September 14, 2000
    Date of Patent: December 24, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyun-woo Kim, Sook Lee, Sang-gyun Woo
  • Negative-working resist composition for electron beams or X-rays
    Publication number: 20020192592
    Abstract: A negative-working resist composition for electron beams or X-rays comprising (A) a compound generating a sulfonic acid by the irradiation of electron beams or x-rays, (B) a resin which is insoluble in water and soluble in an alkali aqueous solution, (C) a crosslinking agent crosslinking with the resin (B) by the action of an acid, and (D) a compound generating a carboxylic acid having a specific structure by the irradiation of electron beams or x-rays.
    Type: Application
    Filed: March 20, 2002
    Publication date: December 19, 2002
    Applicant: FUJI PHOTO FILM CO., LTD.
    Inventors: Shoichiro Yasunami, Koji Shirakawa, Yutaka Adegawa
  • Photoresist composition for deep ultraviolet lithography
    Publication number: 20020187419
    Abstract: The present invention relates to a novel photoresist composition sensitive in the deep ultraviolet region and a method of processing the novel photoresist, where the photoresist comprises a novel copolymer, a photoactive component, and a solvent. The novel copolymer comprises a unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and a unit derived from an unsaturated cyclic non aromatic compound.
    Type: Application
    Filed: May 11, 2001
    Publication date: December 12, 2002
    Inventors: Ralph R. Dammel, Raj Sakamuri
  • Positive photosensitive composition
    Patent number: 6492091
    Abstract: A positive photosensitive composition comprises: (A) a compound generating an acid upon irradiation with one of an actinic ray and radiation; (B) a resin containing a monocyclic or polycyclic alicyclic hydrocarbon structure and increasing the solubility to an alkali developer by the action of an acid; and (C) an onium salt of carboxylic acid.
    Type: Grant
    Filed: August 6, 2001
    Date of Patent: December 10, 2002
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Kunihiko Kodama, Toshiaki Aoai
  • High resolution resists for next generation lithographies
    Publication number: 20020182541
    Abstract: The present invention provides new high resolution resists applicable to next generation lithographies, methods of making these novel resists, and methods of using these new resists in lithographic processes to effect state-of-the-art lithographies. New nanocomposite resists comprising nanoparticles in a polymer matrix are provided in this invention. New chemically amplified resists that incorporate inorganic moieties as part of the polymer are presented herein, as are new chemically amplified resists that incorporate photoacid generating groups within the polymeric chain. Novel non-chemically amplified yet photosensitive resists, and new organic-inorganic hybrid resists are also provided herein. This invention and the embodiments described herein constitute fundamentally new architectures for high resolution resists.
    Type: Application
    Filed: November 5, 2001
    Publication date: December 5, 2002
    Inventor: Kenneth E. Gonsalves
  • Positive resist composition
    Patent number: 6489080
    Abstract: The present invention provides a positive electron beam or X-ray resist composition containing (a) a compound which generates an acid by the irradiation with radiation and (b) a compound having a cationic polymerizable function. The positive electron beam or X-ray resist composition is high sensitivity, has high resolution, can provide an excellent rectangular pattern profile, and is excellent in PCD stability and PED stability.
    Type: Grant
    Filed: December 2, 1999
    Date of Patent: December 3, 2002
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Kazuya Uenishi, Toru Fujimori, Kunihiko Kodama, Koji Shirakawa, Shiro Tan
  • Silicon-containing copolymer and photosensitive resin composition containing the same
    Publication number: 20020177066
    Abstract: The present invention relates to a silicon-containing copolymer which includes a maleic anhydride repeating unit, a norbornene repeating unit, and at least one silicon group-containing norbornene repeating unit. The silicon-containing copolymer is suitable for use as a top layer resist in a bilayer resist system.
    Type: Application
    Filed: May 16, 2001
    Publication date: November 28, 2002
    Applicant: Industrial Technology Research Institute
    Inventors: Tsing-Tang Song, Tsong-Shin Jean, Weir-Torn Jiaang, Chih-Shin Chuang, Han-Bin Cheng, Jui-Fa Chang, Tzu-Yu Lin
  • Polymer for chemically amplified resist and chemically amplified resist composition containing the same
    Publication number: 20020177068
    Abstract: Disclosed is a polymer for use in a chemically amplified resist, a resist composition including such a polymer is suitable for use in a chemically amplified resist, which is sensitive to far ultraviolet rays such as KrF or ArF excimer laser and forms a photoresist pattern having low dependence on and good adhesion to substrate, high transparency in the wavelength range of the above radiation, strong resistance to dry etching, and excellencies in sensitivity, resolution and developability. The resist composition can have a stronger etching resistance with a maximized content of unsaturated aliphatic ring in the polymer and a reduced edge roughness of the photoresist pattern with an alkoxyalkyl acrylate monomer employed.
    Type: Application
    Filed: February 11, 2002
    Publication date: November 28, 2002
    Inventors: Joohyeon Park, Dongchul Seo, Jongbum Lee, Hyunpyo Jeon, Seongju Kim
  • Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same
    Publication number: 20020177069
    Abstract: The present invention discloses a cross-linking monomer represented by the following Chemical Formula 1, a process for preparing a photoresist polymer using the same, and said photoresist polymer: 1
    Type: Application
    Filed: February 22, 2002
    Publication date: November 28, 2002
    Applicant: Hyundai Electronics Industries Co., Ltd.
    Inventors: Jae Chang Jung, Keun Kyu Kong, Min Ho Jung, Geun Su Lee, Ki Ho Baik
  • Positive photoresist composition
    Patent number: 6485883
    Abstract: A positive photoresist composition which comprises (A) a resin having a group which decomposes by the action of an acid to increase solubility in an alkaline developing solution, and (B) a compound which generates an aliphatic or aromatic carboxylic acid substituted with at least one fluorine atom upon irradiation with an actinic ray or radiation. The positive photoresist composition of the present invention is improved in resolution and process allowance such as exposure margin and depth of focus in a lithographic technology using a light source having a short wavelength capable of conducting the ultra fine fabrication and a chemical amplification-type positive photoresist. Further, it exhibits the excellent performance when an electron beam is used as a light source for exposure.
    Type: Grant
    Filed: January 26, 2001
    Date of Patent: November 26, 2002
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Kunihiko Kodama, Shinichi Kanna, Toshiaki Aoai
  • Hydroxycarborane photoresists and process for using same in bilayer thin film imaging lithography
    Patent number: 6482566
    Abstract: A photoresist composition which includes hydroxycarborane either incorporated as a monomeric dissolution modifier or as pendent groups on a polymer backbone. The photoresist composition is particularly useful in a bilayer thin film imaging lithographic process in which ultraviolet radiation-imaging in a wavelength range of between about 365 nm and about 13 nm is employed.
    Type: Grant
    Filed: February 18, 2000
    Date of Patent: November 19, 2002
    Assignee: International Business Machines Corporation
    Inventors: Donald C. Hofer, Scott A. MacDonald, Arpan P. Mahorowala, Robert D. Miller, Josef Michl, Gregory M. Wallraff
  • Chemically amplified resist composition
    Patent number: 6479210
    Abstract: A chemically amplified resist composition is disclosed which shows a high sensitivity, high resolution, excellent processing adaptability and excellent processing stability, which can form good pattern profile and which is suited as a finely processable material for use in manufacturing integrated circuit elements or the like. The chemically amplified resist composition comprises at least (a) an organic material containing a substituent or substituents capable of being released in the presence of an acid and (b) compounds capable of generating an acid upon exposure to radiation (acid-generators), composed of at least one onium salt and at least one of sulfone compounds and sulfonate compounds. This chemically amplified resist composition preferably further contains a basic compound.
    Type: Grant
    Filed: April 3, 2000
    Date of Patent: November 12, 2002
    Assignee: Clariant Finance (BVI) Limited
    Inventors: Yoshiaki Kinoshita, Satoru Funato, Yuko Yamaguchi
  • Photopolymerizable composition
    Publication number: 20020160295
    Abstract: A photopolymerizable composition that is cured with visible light or an infrared laser and is used as a recording layer in a negative planographic printing plate precursor. The photopolymerizable composition is cured by exposure and includes (A) a polymerizable compound that is solid at 25° C. and has at least one radical-polymerizable ethylenically unsaturated double bond in a molecule, (B) a radical polymerization initiator, (C) a binder polymer and, as required, (D) a compound generating heat by infrared exposure.
    Type: Application
    Filed: February 14, 2002
    Publication date: October 31, 2002
    Inventors: Keitaro Aoshima, Kazuhiro Fujimaki
  • Ether monomers and polymers having multi-ring structures, and photosensitive polymers and resist compositions obtained from the same
    Publication number: 20020160303
    Abstract: Provided are alkenyl ether-based monomers having multi-ring structure, and photosensitive polymers and resist compositions obtained from the same.
    Type: Application
    Filed: April 24, 2002
    Publication date: October 31, 2002
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hyun-Woo Kim, Sang-Gyun Woo, Sung-Ho Lee
  • Photosensitive polymer and chemically amplified photoresist composition containing the same
    Patent number: 6472120
    Abstract: The photosensitive polymer includes a first monomer which is norbornene ester having C1 to C12 aliphatic alcohol as a substituent, and a second monomer which is maleic anhydride. A chemically amplified photoresist composition, containing the photosensitive polymer, has an improved etching resistance and adhesion to underlying layer materials, and exhibits wettability to developing solutions.
    Type: Grant
    Filed: July 28, 2000
    Date of Patent: October 29, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-won Jung, Sang-jun Choi, Si-hyeung Lee, Sook Lee
  • Photosensitive monomer, photosensitive polymer and chemically amplified resist composition comprising lactone group having acid-labile protecting group
    Publication number: 20020155379
    Abstract: A photosensitive monomer including a methylene butyrolactone derivative represented by the following formula: 1
    Type: Application
    Filed: February 20, 2002
    Publication date: October 24, 2002
    Inventors: Kwang-sub Yoon, Sang-gyun Woo
  • Chemical amplifying type positive resist compositions
    Publication number: 20020155378
    Abstract: A chemical amplifying type positive resist composition having resolution and sensitivity that are well balanced, undergoing a minimum of shrinkage due to the irradiation with electron rays of SEM, and comprising a resin that has a polymerization unit derived from an unsaturated monomer expressed by the following formula (1) and that itself is insoluble in an alkali but becomes alkali-soluble due to the action of an acid; and an acid generating agent: 1
    Type: Application
    Filed: February 15, 2002
    Publication date: October 24, 2002
    Inventors: Yasunori Uetani, Hiroaki Fujishima, Kaoru Araki
  • Resist materials for 157-nm lithography
    Patent number: 6468712
    Abstract: A radiation sensitive resin composition including a photo-acid generator and an aliphatic polymer having one or more electron withdrawing groups adjacent to or attached to a carbon atom bearing a protected hydroxyl group, wherein the protecting group is labile in the presence of in situ generated acid is described. The radiation sensitive resin composition can be used as a resist suitable for image transfer by plasma etching and enable one to obtain an etching image having high precision with high reproducibility with a high degree of resolution and selectivity.
    Type: Grant
    Filed: February 25, 2000
    Date of Patent: October 22, 2002
    Assignee: Massachusetts Institute of Technology
    Inventor: Theodore H. Fedynyshyn
  • Negative radiation-sensitive resin composition
    Patent number: 6468714
    Abstract: A negative radiation-sensitive resin composition including (A) an alkali-soluble resin containing a copolymer selected from the group consisting of a hydroxystyrene/styrene copolymer having hydroxystyrene units in a content of from 65 to 90 mol % and a hydroxystyrene/&agr;-methylstyrene copolymer having hydroxystyrene units in a content of from 65 to 90 mol %, (B) a radiation-sensitive acid-generating agent containing a hydroxyl group-containing onium salt compound, and (C) a cross-linking agent containing an N-(alkoxymethyl)glycoluril compound. The composition is suitable as a chemically amplified negative resist, to which alkaline developing solutions having usual concentration are applicable and which can form, in usual line-and-space patterns, resist patterns having a rectangular cross-sectional shape in a high resolution and also has superior sensitivity, developability and dimensional fidelity.
    Type: Grant
    Filed: December 21, 2000
    Date of Patent: October 22, 2002
    Assignee: JSR Corporation
    Inventors: Toshiyuki Kai, Yong Wang, Shirou Kusumoto, Yoshihisa Ohta
  • Radiation-sensitive resin composition
    Patent number: 6465150
    Abstract: A radiation-sensitive resin composition exhibiting high sensitivity to various types of radiation and capable of forming a minute pattern with sufficient resolution and depth of field and small surface roughness in various types of patterns such as a dense line pattern, isolated line pattern, or contact holes, particularly in line-type patterns. The resin composition comprises (A) an aromatic sulfonic acid onium salt compound consisting of a 2,4-difluorobenzenesulfonic acid anion, 4-trifluoromethylbenzenesulfonic acid anion, or 2-trifluoromethylbenzenesulfonic acid anion, and an onium cation of sulfur or iodonium, and (B) a copolymer represented by a 4-hydroxystyrene/4-t-butoxystyrene copolymer and a 4-hydroxystyrene/4-(1′-ethoxyethoxy)styrene copolymer.
    Type: Grant
    Filed: October 12, 2000
    Date of Patent: October 15, 2002
    Assignee: JSR Corporation
    Inventors: Jun Numata, Shirou Kusumoto, Eiichi Kobayashi
  • Cross-linker for photoresist, and process for forming a photoresist pattern using the same
    Patent number: 6465147
    Abstract: The present invention relates to a cross-linker for a photoresist polymer, and a process for forming a negative photoresist pattern by using the same. Preferred cross-linkers according to the invention comprise compounds having two or more aldehyde groups, such as glutaric dialdehyde, 1,4-cyclohexane dicarboxaldehyde, or the like. Further, a photoresist composition is disclosed, which comprises (i) a cross-linker as described above, (ii) a photoresist copolymer comprising a hydroxyl-containing alicyclic monomer, (iii) a photoacid generator and (iv) an organic solvent, as well as a process for forming a photoresist pattern using such photoresist composition.
    Type: Grant
    Filed: December 21, 1999
    Date of Patent: October 15, 2002
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Geun Su Lee, Jae Chang Jung, Min Ho Jung, Ki Ho Baik
  • Composition for light absorption film formation containing blocked isocyanate compound and antireflection film formed therefrom
    Patent number: 6465148
    Abstract: A composition for forming a radiation absorbing coating which comprises an organic solvent, a radiation absorbing polymer or a radiation absorbing material dissolved therein and a crosslinking agent having blocked isocyanate groups. Since the isocyanate groups of the crosslinking agent have been blocked, the composition containing the crosslinking agent has excellent storage stability. When the composition applied to a substrate and then baked, crosslinking proceeds to give an antireflective coating, which does not intermix with a resist layer to be formed thereon by coating and is free from diffusion of a photo-generated acid thereinto from the resist layer. As a result, a resist image free from footing or scum can be formed.
    Type: Grant
    Filed: May 23, 2000
    Date of Patent: October 15, 2002
    Assignee: Clariant Finance (BVI) Limited
    Inventors: Wen-Bing Kang, Ken Kimura, Shoko Matsuo, Yoshinori Nishiwaki, Hatsuyuki Tanaka
  • Photosensitive polymers and resist compositions comprising the photosensitive polymers
    Publication number: 20020146642
    Abstract: A photosensitive polymer of a resist composition includes a copolymer of alkyl vinyl ether containing silicon and maleic anhydride, represented by the following formula: 1
    Type: Application
    Filed: March 25, 2002
    Publication date: October 10, 2002
    Inventors: Hyun-woo Kim, Sang-gyun Woo, Yool Kang
  • Chemically amplifying type positive resist composition
    Publication number: 20020146641
    Abstract: A chemically amplifying type positive resist composition suitable for use in the lithography utilizing an ArF or KrF excimer laser and excellent in the shape of profile is provided, which comprises a resin which has an alkali-soluble group protected by 2-alkyl-2-adamantyl group or 1-adamantyl-1-alkylalkyl group, and which, per se, is insoluble or slightly soluble in alkali but becomes soluble in alkali by the action of an acid; and a sulfonium salt acid generating agent represented by the following formula (I): 1
    Type: Application
    Filed: November 16, 2001
    Publication date: October 10, 2002
    Inventors: Yasunori Uetani, Kenji Ohashi, Hiroshi Moriuma
  • Negative photosensitive lithographic printing plate
    Publication number: 20020142249
    Abstract: A negative photosensitive lithographic printing plate comprises: a support; and a photosensitive layer containing: i) a modified poly(vinyl alcohol) resin binder having a radical-polymerizable group and an acid group; and ii) at least one of a photo-polymerization initiator and a heat-polymerization initiator.
    Type: Application
    Filed: November 21, 2001
    Publication date: October 3, 2002
    Inventor: Yasuhito Ohshima
  • Forming a toner using surfactant-free emulsion polymerization
    Patent number: 6458501
    Abstract: The latex of an emulsion aggregation toner is prepared without the use of a surfactant. The process comprises preparing an emulsion of monomers in water without a surfactant; adding a free radical initiator to at least a portion of the emulsion to initiate seed polymerization to form seed polymer, wherein the free radical initiator attaches to the seed polymer to form ionic, hydrophilic end groups on the seed polymer; and adding additional monomer to the composition to complete polymerization to form a latex polymer.
    Type: Grant
    Filed: September 30, 1999
    Date of Patent: October 1, 2002
    Assignee: Xerox Corporation
    Inventors: Chieh-Min Cheng, Grazyna E. Kmiecik-Lawrynowicz, Allan K. Chen
  • Positive resist composition to be irradiated with one of an electron beam and X-ray
    Publication number: 20020136980
    Abstract: A positive resist composition to be irradiated with one of an electron beam and X-ray, comprises: (a) a compound capable of generating an acid upon irradiation with one of electron beam and X-ray; (b1) a resin: increasing the solubility in an alkali developer by the action of an acid; and having a group capable of leaving by the action of an acid, in which the leaving group includes a residue of a compound, the compound having a smaller ionization potential value than p-ethylphenol; and (c) a solvent.
    Type: Application
    Filed: December 21, 2001
    Publication date: September 26, 2002
    Applicant: FUJI PHOTO FILM CO., LTD.
    Inventors: Tomoya Sasaki, Kazuyoshi Mizutani, Koji Shirakawa
  • Copolymer photoresist with improved etch resistance
    Publication number: 20020132185
    Abstract: Improved resolution photoresist compositions which are capable of high resolution lithographic performance using 193 nm imaging radiation (and possibly also with other imaging radiation) are obtained by use of imaging copolymers which are improvements over known alternating copolymer-based photoresists. The copolymers are characterized by the presence of an alkyl-functionalized cyclic olefin third monomeric unit which enhances the resolution of the photoresist. The performance of the compositions may be further enhanced by the use of bulky acid-labile protecting groups on the imaging copolymer.
    Type: Application
    Filed: May 8, 2002
    Publication date: September 19, 2002
    Applicant: International Business Machines Corporation
    Inventors: Robert D. Allen, Phillip Joe Brock, Richard Allen DiPietro, Hiroshi Ito, Pushkara Rao Varanasi
  • Polycyclic resist compositions with increased etch resistance
    Patent number: 6451499
    Abstract: Polycyclic polymers containing pendant aromatic moieties are disclosed. The polymers exhibit light transparency properties to deep UV wave lengths making them useful for high resolution photolithographic applications. These polymers are particularly useful in chemically amplified positive and negative tone resists.
    Type: Grant
    Filed: June 27, 2000
    Date of Patent: September 17, 2002
    Assignees: The B.F. Goodrich Company, International Business Machines Corp.
    Inventors: Saikumar Jayaraman, Brian Leslie Goodall, Larry Funderburk Rhodes, Robert Adam Shick, Richard Vicari, Robert David Allen, Juliann Opitz, Ratnam Sooriyakumaran, Thomas Wallow
  • Photoresist composition for deep UV and process thereof
    Patent number: 6447980
    Abstract: The present invention relates to a chemically amplified system, which is, sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a polymer that is insoluble an aqueous alkaline solution and comprises at least one acid labile group, b) a compound capable of producing an acid upon radiation. The present invention comprises a polymer that is made from a alicyclic hydrocarbon olefin, an acrylate with a pendant cyclic moeity, and a cyclic anhydride. The present invention also relates to a process for imaging such a photoresist.
    Type: Grant
    Filed: July 19, 2000
    Date of Patent: September 10, 2002
    Assignee: Clariant Finance (BVI) Limited
    Inventors: M. Dalil Rahman, Munirathna Padmanaban, Ralph R. Dammel
  • Positive-working chemical-amplification photoresist composition
    Publication number: 20020119393
    Abstract: Disclosed is a positive-working chemical-amplification photoresist composition used in the patterning works in the manufacture of semiconductor devices, with which quite satisfactory patterning of a photoresist layer can be accomplished even on a substrate surface provided with an undercoating film of silicon nitride, phosphosilicate glass, borosilicate glass and the like in contrast to the prior art using a conventional photoresist composition with which satisfactory patterning can hardly be accomplished on such an undercoating film. The photoresist composition comprises, besides a film-forming resin capable of being imparted with increased solubility in an alkaline solution by interacting with an acid and a radiation-sensitive acid-generating compound, a phosphorus-containing oxo acid such as phosphoric acid and phosphonic acid or an ester thereof.
    Type: Application
    Filed: April 22, 2002
    Publication date: August 29, 2002
    Inventors: Hiroto Yukawa, Katsumi Oomori, Ryusuke Uchida, Yukihiro Sawayanagi
  • Onium salts, photoacid generators for resist compositions, resist compositions, and patterning process
    Patent number: 6440634
    Abstract: Onium salts of the formula (1) are novel. R1 is C1-10 alkyl or C6-14 aryl, R2 is H or C1-6 alkyl, p is an integer of 1 to 5, q is an integer of 0 to 4, p+q=5, R3 is C1-10 alkyl or C6-14 aryl, M is a sulfur or iodine atom, and “a” is equal to 3 or 2. A chemical amplification type resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect after coating, development and stripping, and improved pattern profile after development.
    Type: Grant
    Filed: August 15, 2000
    Date of Patent: August 27, 2002
    Assignee: Shin-Etsu Chemical Co., LTD
    Inventors: Youichi Ohsawa, Jun Watanabe, Wataru Kusaki, Satoshi Watanabe, Takeshi Nagata, Shigehiro Nagura
  • Positive-working resist composition
    Publication number: 20020102492
    Abstract: Provided is a chemical-amplification positive-working resist composition capable of giving a resist pattern having excellent dry etching resistance and adhesion to the substrate with high pattern resolution and further having a good profile with improvement in the line edge roughness.
    Type: Application
    Filed: November 27, 2001
    Publication date: August 1, 2002
    Inventors: Takeshi Iwai, Hideo Hada, Satoshi Fujimura
  • Positive photoresist composition for far ultraviolet ray exposure
    Publication number: 20020098440
    Abstract: A positive photoresist composition for far ultraviolet ray exposure improved in standard developing solution suitability, good in defocus latitude depended on line pitch of a resist pattern formed and excellent in sensitivity to a light source of shorter wavelength, which comprises (i) a compound capable of generating an acid by irradiation of actinic light or radiation; and (ii) a resin containing (a) repeating units each having an alkali-soluble group protected with at least one specific group containing an alicyclic hydrocarbon structure, (b) repeating units having, for example, lactone rings, and (c) repeating units derived from (meth)acrylic acid, the content of the repeating units of (c) being from 5 mol % to 18 mol % based on the total repeating units of the resin, and the resin being decomposable by action of an acid to increase its solubility in an alkali solution.
    Type: Application
    Filed: January 27, 2000
    Publication date: July 25, 2002
    Inventors: Kenichiro Sato, Kunihiko Kodama, Toshiaki Aoai
  • Positive type photosensitive resin composition and method for forming resist pattern
    Publication number: 20020094488
    Abstract: A liquid or a solid positive type photosensitive resin composition is herein disclosed which is used under the irradiation circumstance of a safelight having a maximum wavelength within the range of 500 to 620 nm, wherein an absorbancy of an unexposed film formed from this composition is 0.
    Type: Application
    Filed: September 13, 2001
    Publication date: July 18, 2002
    Inventors: Genji Imai, Hideo Kogure
  • Positive working photosensitive composition
    Patent number: 6416925
    Abstract: A positive working photosensitive composition suitable for exposure using a light source of wavelengths of 250 nm or shorter, particularly 220 nm or shorter; comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation and (B) a resin which comprises constitutional repeating units having alicyclic groups of particular structures, including adamantyl groups, and has groups capable of decomposing due to the action of acids to increase the solubility in an alkali developer.
    Type: Grant
    Filed: February 2, 2000
    Date of Patent: July 9, 2002
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Toshiaki Aoai, Shiro Tan, Kenichiro Sato
  • Onium salts, photoacid generators, resist compositions, and patterning process
    Patent number: 6416928
    Abstract: Onium salts of substituted phenylmethylbenzene-sulfonate anions with iodonium or sulfonium cations are novel. A chemically amplified resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect after coating, development and peeling, and improved pattern profile after development.
    Type: Grant
    Filed: October 5, 2000
    Date of Patent: July 9, 2002
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Youichi Ohsawa, Jun Watanabe, Satoshi Watanabe, Shigehiro Nagura
  • Method for negative image recording
    Patent number: 6416939
    Abstract: The invention provides a negative type image recording material containing (A) a compound having at least one group represented by general formula (1) below (where Ar1 represents an arylene group, and R1 represents hydrogen or an alkyl group having 1˜4 carbon atoms, (B) a polymer capable of reacting with compound (A) in the presence of acid, and (C) a compound that generates acid in response to supply of energetic radiation, an electron beam, or heat. The negative type image recording material has excellent sensitivity and enables direct image recording from digital data supplied by a computer or the like.
    Type: Grant
    Filed: April 26, 2000
    Date of Patent: July 9, 2002
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Kazuto Shimada, Kazuto Kunita
  • Ammonium salt of organic acid and resist composition containing the same
    Publication number: 20020086234
    Abstract: The present invention provides a novel ammonium salt of an organic acid. When the salt is used as a base additive for a chemically amplified resist, the environmental stability of the resist can be enhanced, and the T-top phenomenon can be effectively prevented. In addition, the line width change caused by acid diffusion can be prevented, and the E0 value of the resist can be decreased.
    Type: Application
    Filed: March 9, 2001
    Publication date: July 4, 2002
    Inventors: Sheng-Yueh Chang, Jiam-Hong Chen, Ting-Chun Liu, Tzu-Yu Lin, Wen-Yuang Tsai