Halogen Compound Containing Patents (Class 430/925)
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Patent number: 6929897Abstract: Polymers and co-polymers having monomeric units formed by the polymerization of monomers of the Structure I where R1 is a moiety containing an ethylenically unsaturated polymerizable group, R2 is a C1-C3 alkylene group, and R3 is a C1-10 linear or cyclic alkyl group, a C6-10 aromatic or substituted aromatic group, a C1-8 alkoxy methyl, or a C1-8 alkoxy ethyl group, are useful as binder resins for photosensitive compositions, and processes for photolithography in the production of semiconductor devices and materials.Type: GrantFiled: August 19, 2004Date of Patent: August 16, 2005Assignee: Arch Specialty Chemicals, Inc.Inventors: Patrick Foster, Gregory Spaziano, Binod B De
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Patent number: 6890697Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.Type: GrantFiled: January 31, 2002Date of Patent: May 10, 2005Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Katsumi Oomori, Hiroto Yukawa, Ryusuke Uchida, Kazufumi Sato
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Patent number: 6869745Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.Type: GrantFiled: January 31, 2002Date of Patent: March 22, 2005Assignee: Tokyo Ohka Kogyo, Co., Inc.Inventors: Katsumi Oomori, Hiroto Yukawa, Ryusuke Uchida, Kazufumi Sato
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Patent number: 6864040Abstract: The present invention relates to IR-sensitive compositions containing an initator system comprising: (a) at least one compound capable of absorbing IR radiation selected from triarylamine dyes, thiazolium dyes, indolium dyes, oxazolium dyes, cyanine dyes, polyaniline dyes, polypyrrole dyes, polythiophene dyes and phthalocyanine pigments (b) at least one compound capable of producing radicals selected from polyhaloalkyl-substituted compounds (c) at least one polycarboxylic acid represented by the following formula I wherein Y is selected from the group consisting of O, S and NR7, each of R4, R5 and R6 is independently selected from the group consisting of hydrogen, C1-C4 alkyl, aryl which is optionally substituted, —COOH and NR8CH2COOH, R7 is selected from the group consisting of hydrogen, C1-C6 alkyl, —CH2CH2OH, and C1-C5 alkyl substituted with -COOH, R8 is selected from the group consisting of —CH2COOH, —CH2OH and —(CH2)2N(CH2COOH)2 and r is 0, 1, 2 or 3 with the proviso that at least one of R4, R5, RType: GrantFiled: April 11, 2001Date of Patent: March 8, 2005Assignee: Kodak Polychrome Graphics LLCInventors: Ursula Müller, Tobias Wittig, Hans-Joachim Timpe
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Patent number: 6861197Abstract: A base polymer having incorporated an ester group having a fluorinated alicyclic unit is provided. A resist composition comprising the polymer is sensitive to high-energy radiation, and has excellent sensitivity at a wavelength of less than 200 nm, significantly improved transparency by virtue of the fluorinated alicyclic units incorporated as well as satisfactory plasma etching resistance. The resist composition has a low absorption at the exposure wavelength of a F2 laser and is ideal as a micropatterning material in VLSI fabrication.Type: GrantFiled: February 28, 2002Date of Patent: March 1, 2005Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., Ltd., Central Glass Co., Ltd.Inventors: Yuji Harada, Jun Watanabe, Jun Hatakeyama, Yoshio Kawai, Masaru Sasago, Masayuki Endo, Shinji Kishimura, Michitaka Ootani, Satoru Miyazawa, Kentaro Tsutsumi, Kazuhiko Maeda
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Patent number: 6858378Abstract: The use of photoacid generators including an alkoxyphenylphenyliodonium salt and/or bis(t-butylphenyl)iodonium salt in a photoimageable composition helps improve resolution. Suitable photoimageable compositions includes: (a) a multifuctional polymeric epoxy resin that is dissolved in an organic solvent wherein the epoxy resin comprises oligomers of bisphenol A that is quantitatively protected by glycidyl ether and wherein the oligomers have an average functionality that ranges from about 3 to 12; and a photoacid generator comprising an alkoxyphenylphenyliodonium salt and/or bis(t-butylphenyl)iodonium salt. Preferred alkoxyphenylphenyliodonium salts include 4-octyloxyphenyl phenyliodonium hexafluoroantimonate and 4-methoxyphenyl phenyliodonium hexafluoroantimonate. The photoimageable composition is particularly suited for producing high aspect ratio microstructures.Type: GrantFiled: April 17, 2002Date of Patent: February 22, 2005Assignee: Sandia National LaboratoriesInventors: Paul Dentinger, Karen L. Krafick, Kelby Liv Simison
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Patent number: 6849382Abstract: A photosensitive polymer including silicon and a resist composition using the same are disclosed. The photosensitive polymer has the following formula 1. In formula 1, R1 of the first monomer and R3 of the third monomer are an alkyl group. R2 of the first monomer is hydrogen, alkyl, alkoxy, or carbonyl. The X of the first monomer is an integer selected from 1 to 4. Further, m/(m+n+p) is about 0.1 to about 0.4, n/(m+n+p) is about 0.1 to about 0.5, and p/(m+n+p) is about 0.1 to about 0.4.Type: GrantFiled: November 25, 2003Date of Patent: February 1, 2005Assignee: Samsung Electronics Co., LTDInventor: Sang-Jun Choi
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Patent number: 6844136Abstract: This present invention discloses a photopolymerisable mixture comprising a polymer binder, a radically photopolymerisable component containing at least one photooxidisable group, a polyethylene glycol di(meth)acrylate containing 2 or more ethylene glycol units, a photoreducible dye and a metallocene. This mixture can be used for preparing high-speed light-sensitive recording materials showing a particularly high resolution, especially for small negative types.Type: GrantFiled: August 24, 2000Date of Patent: January 18, 2005Assignee: AGFA-GevaertInventors: Thorsten Lifka, Sabine Kosack, Thomas Leichsenring, Hans-Joachim Schlosser
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Patent number: 6838222Abstract: A photopolymerizable composition that is cured with visible light or an infrared laser and is used as a recording layer in a negative planographic printing plate precursor. The photopolymerizable composition is cured by exposure and includes (A) a polymerizable compound that is solid at 25° C. and has at least one radical-polymerizable ethylenically unsaturated double bond in a molecule, (B) a radical polymerization initiator, (C) a binder polymer and, as required, (D) a compound generating heat by infrared exposure.Type: GrantFiled: February 14, 2002Date of Patent: January 4, 2005Assignee: Fuji Photo Film Co., Ltd.Inventors: Keitaro Aoshima, Kazuhiro Fujimaki
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Patent number: 6838224Abstract: A chemical amplification, positive resist composition is provided comprising (A) a photoacid generator and (B) a resin which changes its solubility in an alkali developer under the action of acid and has substituents of the formula: C6H11—(CH2)nOCH(CH2CH3)— wherein C6H11 is cyclohexyl and n=0 or 1. The composition has many advantages including improved focal latitude, improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect left after coating, development and stripping, and improved pattern profile after development and is suited for microfabrication by any lithography, especially deep UV lithography.Type: GrantFiled: March 6, 2001Date of Patent: January 4, 2005Assignee: Shi-Etsu Chemical Co., Ltd.Inventors: Youichi Ohsawa, Jun Watanabe, Takanobu Takeda, Akihiro Seki
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Publication number: 20040241569Abstract: A chemically-amplified resist composition is disclosed, which comprises a polymer of formula (I) below: 1Type: ApplicationFiled: May 28, 2003Publication date: December 2, 2004Applicant: Everlight USA, Inc.Inventors: Chi-Sheng Chen, Chan-Chan Tsai, Bin Jian, Hsin-Ming Liao
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Publication number: 20040234899Abstract: There is provided a method of forming a fine resist pattern in which a highly practicable photosensitive composition obtained from a material having a high transparency against an exposure light having a short wavelength such as F2 excimer laser beam is used as a resist.Type: ApplicationFiled: January 8, 2004Publication date: November 25, 2004Inventors: Minoru Toriumi, Tamio Yamazaki, Hiroyuki Watanabe, Toshiro Itani, Takayuki Araki, Takuji Ishikawa
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Patent number: 6818375Abstract: Disclosed are photoimageable compositions having improved stripping properties including a photoresist strip enhancer. Also disclosed are methods of enhancing the strippability of photoimageable compositions and methods for manufacturing printed wiring boards using such photoimageable compositions.Type: GrantFiled: November 28, 2001Date of Patent: November 16, 2004Assignee: Eternal Technology CorporationInventors: Thomas A. Koes, Todd Johnson
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Patent number: 6815144Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an iodonium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.Type: GrantFiled: January 31, 2002Date of Patent: November 9, 2004Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Katsumi Oomori, Hiroto Yukawa, Ryusuke Uchida, Kazufumi Sato
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Patent number: 6800420Abstract: A photosensitive thick film composition. The photosensitive thick film composition can produce electrode material with high resolution and high contrast. The photosensitive thick film composition includes an acrylic copolymer, a photoinitiator, a reactive monomer, a conductive metal, glass powder, an additive, and an organic solvent.Type: GrantFiled: December 4, 2002Date of Patent: October 5, 2004Assignee: Industrial Technology Research InstituteInventors: Tsing-Tang Song, Weir-Torn Jiang, Shung-Jim Yang, Sheng-Min Wang, Kom-Bei Shiu
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Publication number: 20040180283Abstract: Imageable elements with improved dot stability are disclosed. The imageable elements comprise a layer of an imageable composition over a support. The imageable composition comprises an infrared absorbing compound, an acid generator, an acid activatable crosslinking agent, a polymeric binder, and about 0.01 wt % to 1 wt % of an added onium compound. The elements may be thermally imaged and developed to produce images useful as lithographic printing plates.Type: ApplicationFiled: March 10, 2003Publication date: September 16, 2004Inventors: Ting Tao, Jeffrey James Collins, Thomas Jordan, Scott A. Beckley
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Patent number: 6777161Abstract: To provide a lower layer resist composition for a silicon-containing two-layer resist, which is excellent in the dry etching resistance and film thickness uniformity. A lower layer resist composition for a silicon-containing two-layer resist, comprising (a) a phenol-based polymer, (b) a compound capable of generating a sulfonic acid at a temperature of 100° C. or more, (c) a phenol-based acid crosslinking agent having two or more benzene rings and capable of crosslinking with the polymer under the action of an acid, and (d) a solvent.Type: GrantFiled: April 10, 2002Date of Patent: August 17, 2004Assignee: Fuji Photo Film Co., Ltd.Inventors: Shoichiro Yasunami, Kazuyoshi Mizutani
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Patent number: 6767688Abstract: New photoresist compositions are provided that contain a halogenated salt, particularly a halogenated counter ion of an ammonium or alkyl ammonium salt. Preferred photoresists of the invention are chemically-amplified positive resists and contain an ammonium or alkyl ammonium salt that has a halogenated anion component such as a halogenated alkyl sulfonate or carboxylate anion component. Inclusion of the halogenated organic salt in a photoresist composition can provide enhanced lithographic performance.Type: GrantFiled: December 20, 2002Date of Patent: July 27, 2004Assignee: Shipley Company, L.L.C.Inventors: Gary Ganghui Teng, James W. Thackeray, James F. Cameron
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Patent number: 6764809Abstract: A process of forming a resist image in a microelectronic substrate comprises the steps of contacting the substrate with a composition first comprising carbon dioxide and a component selected from the group consisting of at least one polymeric precursor, at least one monomer, at least one polymeric material, and mixtures thereof to deposit the component on the substrate and form a coating thereon; then imagewise exposing the coating to radiation such that exposed and unexposed coating portions are formed; then subjecting the coating to a second composition comprising carbon dioxide having such that either one of the exposed or the unexposed coating portions are removed from the substrate and the other coating portion is developed and remains on the coating to form an image thereon.Type: GrantFiled: October 10, 2001Date of Patent: July 20, 2004Assignees: North Carolina State University, University of North Carolina at Chapel HillInventors: Joseph M. DeSimone, Ruben G. Carbonell, Jonathan Kendall, Christopher L. McAdams
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Patent number: 6759184Abstract: A process for the post-exposure amplification of resist structures uses amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers. In the first step, a fluorine-containing resist is applied to a substrate. After exposure and development of the resist, bonding of an amplification agent chemically amplifies the resist structures. A fluorine-containing amplification agent is preferably used to achieve an improved reaction between polymer and amplification agent due to the improved miscibility of the molecular chains.Type: GrantFiled: June 28, 2002Date of Patent: July 6, 2004Assignee: Infineon Technologies AGInventors: Jörg Rottstegge, Christian Eschbaumer, Christoph Hohle, Waltraud Herbst, Michael Sebald
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Publication number: 20040126699Abstract: A photosensitive polymer including silicon and a resist composition using the same are disclosed. The photosensitive polymer has the following formula 1.Type: ApplicationFiled: November 25, 2003Publication date: July 1, 2004Applicant: Samsung Electronics Co., Inc.Inventor: Sang-Jun Choi
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Patent number: 6756179Abstract: A positive resist composition comprises (A) a resin capable of decomposing by the action of an acid to increase solubility in an alkali developer, and (B) a compound capable of generating an aromatic sulfonic acid substituted with at least one group containing a fluorine atom upon irradiation with one of an actinic ray and radiation.Type: GrantFiled: September 18, 2001Date of Patent: June 29, 2004Assignee: Fuji Photo Film Co., Ltd.Inventors: Toru Fujimori, Kunihiko Kodama, Shinichi Kanna, Fumiyuki Nishiyama
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Patent number: 6753126Abstract: Disclosed is a polymer for use in a chemically amplified resist, a resist composition including such a polymer is suitable for use in a chemically amplified resist, which is sensitive to KrF or ArF excimer laser and forms a photoresist pattern having low dependence on and good adhesion to substrate, high transparency in the wavelength range of the above radiation, strong resistance to dry etching, and excellencies in sensitivity, resolution and developability. The resist composition can have a stronger etching resistance with a maximized content of unsaturated aliphatic ring in the polymer and a reduced edge roughness of the photoresist pattern with an alkoxyalkyl acrylate monomer employed.Type: GrantFiled: February 11, 2002Date of Patent: June 22, 2004Assignee: Korea Kumho Petrochemical Co., Ltd.Inventors: Joohyeon Park, Dongchul Seo, Jongbum Lee, Hyunpyo Jeon, Seongju Kim
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Patent number: 6749995Abstract: Disclosed is a light sensitive composition containing a compound represented by the following formula (1): wherein R1, R2 and R3 independently represent a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group, provided that R1 and R2 may combine with each other to form a ring or R2 and R3 may combine with each other to form a ring.Type: GrantFiled: January 29, 2003Date of Patent: June 15, 2004Assignee: Konica CorporationInventor: Toshiyuki Matsumura
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Publication number: 20040106064Abstract: A polymer used for a negative type resist composition having a first repeating unit of a Si-containing monomer unit, a second repeating unit having a hydroxy group or an epoxy ring and copolymerized with the first repeating unit is provided.Type: ApplicationFiled: November 6, 2003Publication date: June 3, 2004Applicant: Samsung Electronics Co., Ltd.Inventor: Sang-Jun Choi
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Publication number: 20040096773Abstract: A soluble polyimide for a photosensitive polyimide precursor and a photosensitive polyimide precursor composition including the soluble polyimide, wherein the soluble polyimide contains hydroxyl and acetyl moieties and at least one reactive end-cap group at one or both ends of the polymer chain. The photosensitive polyimide precursor composition comprises the soluble polyimide, a polyamic acid containing at least one reactive end-cap group at one or both ends of the polymer chain, a photo acid generator (PAG) and optionally a dissolution inhibitor. Since the polyimide film of the present invention exhibits excellent thermal, electric and mechanical properties, it can be used as insulating films or protective films for various electronic devices. A pattern with a high resolution may be formed even on the polyamide film having a thickness of above 10 &mgr;m.Type: ApplicationFiled: November 7, 2003Publication date: May 20, 2004Inventors: Myung Sup Jung, Yong Young Park, Sung Kyung Jung, Sang Yoon Yang
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Publication number: 20040067431Abstract: A photoreactive composition comprises (a) at least one reactive species that is capable of undergoing an acid- or radical-initiated chemical reaction; and (b) a photoinitiator system comprising photochemically-effective amounts of (1) at least one type of semiconductor nanoparticle quantum dot that has at least one electronic excited state that is accessible by absorption of two or more photons, and (2) a composition, different from said reactive species, that is capable of interacting with the excited state of the semiconductor nanoparticle quantum dot to form at least one reaction-initiating species.Type: ApplicationFiled: October 2, 2002Publication date: April 8, 2004Applicant: 3M Innovative Properties CompanyInventors: David S. Arney, Catherine A. Leatherdale, Manoj Nirmal
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Patent number: 6716566Abstract: There is provided a negative planographic printing plate which can be directly recorded based on digital data from computers and the like, excellent in storage stability, shows no reduction in sensitivity with the lapse of time, and has excellent face flatness. It comprises a substrate having disposed thereon a photosensitive layer which is obtained by applying a photosensitive layer application solution containing an infrared absorber, a compound which generates a radical or acid due to heat, a polymerizable compound or a crosslinking compound, and a silicon-based surfactant such as a siloxane/oxyethylene copolymer and the like, onto the substrate and drying the solution, and which is hardened by exposure to an infrared laser ray.Type: GrantFiled: July 2, 2001Date of Patent: April 6, 2004Assignee: Fuji Photo Film Co., Ltd.Inventor: Keitaro Aoshima
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Publication number: 20040053160Abstract: A resist composition comprising:Type: ApplicationFiled: July 7, 2003Publication date: March 18, 2004Applicant: FUJI PHOTO FILM CO., LTD.Inventors: Hyou Takahashi, Kazuyoshi Mizutani, Koji Shirakawa, Shoichiro Yasunami
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Patent number: 6696217Abstract: A photosensitive monomer including a methylene butyrolactone derivative represented by the following formula: wherein R1 is a hydrogen atom or alkyl group, R2 is an acid-labile group, X is a hydrogen atom, or substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and Y is a substituted or unsubstitued alkyl group or alicyclic hydrocarbon group having 1 to 20 carbon atoms.Type: GrantFiled: February 20, 2002Date of Patent: February 24, 2004Assignee: Samsung Electronics Co., Ltd.Inventors: Kwang-sub Yoon, Sang-gyun Woo
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Patent number: 6692893Abstract: Onium salts of arylsulfonyloxynaphthalenesulfonate anions with iodonium or sulfonium cations are novel. A chemically amplified resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, improved focal latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.Type: GrantFiled: October 23, 2001Date of Patent: February 17, 2004Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Youichi Ohsawa, Jun Watanabe, Takeshi Nagata, Jun Hatakeyama
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Patent number: 6692891Abstract: The present invention relates to a photoresist composition containing a photo radical generator, more specifically, to a photoresist composition which comprises (a) photoresist resin, (b) a photoacid generator, (c) an organic solvent and (d) a photo radical generator. The present photoresist composition reduces or prevents a sloping pattern formation due to a higher concentration of acid in the upper portion of the photoresist relative to the lower portion of the photoresist.Type: GrantFiled: June 12, 2001Date of Patent: February 17, 2004Assignee: Hynix Semiconductor IncInventors: Jae Chang Jung, Geun Su Lee, Min Ho Jung, Ki Ho Baik
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Publication number: 20040023163Abstract: Disclosed is a positive-working chemical-amplification photoresist composition used in the patterning works in the manufacture of semiconductor devices, with which quite satisfactory patterning of a photoresist layer can be accomplished even on a substrate surface provided with an undercoating film of silicon nitride, phosphosilicate glass, borosilicate glass and the like in contrast to the prior art using a conventional photoresist composition with which satisfactory patterning can hardly be accomplished on such an undercoating film. The photoresist composition comprises, besides a film-forming resin capable of being imparted with increased solubility in an alkaline solution by interacting with an acid and a radiation-sensitive acid-generating compound, a phosphorus-containing oxo acid such as phosphoric acid and phosphonic acid or an ester thereof.Type: ApplicationFiled: July 31, 2003Publication date: February 5, 2004Inventors: Hiroto Yukawa, Katsumi Oomori, Ryusuke Uchida, Yukihiro Sawayanagi
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Publication number: 20040009430Abstract: The photosensitive resin composition of the present invention is an excellent photosensitive resin composition: exhibiting significant transmissibility at the use of an exposure light source of 160 nm or less, more specifically F2 excimer laser light , where line edge roughness and development time dependence are small and a problem of footing formation is improved; and comprising a resin which decomposes by an action of acid to increase the solubility in alkali developer, in which the resin contains a specific repeat unit; a compound capable of generating an acid upon irradiation with one of an actinic ray and a radiation, in which the compound includes at least two kinds of compounds selected from the group consisting of specific compounds (B1), (B2), (B3) and (B4).Type: ApplicationFiled: June 6, 2003Publication date: January 15, 2004Applicant: FUJI PHOTO FILM CO., LTD.Inventors: Shinichi Kanna, Kazuyoshi Mizutani, Tomoya Sasaki
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Patent number: 6677100Abstract: A photosensitive polymer including a copolymer of an acrylate or methacrylate monomer having a group indicated by the following formula (I), a comonomer selected from a maleic anhydride monomer and a cyclic vinyl ether monomer, and a resist composition including the same. In the formula, R1, R2, R3, and R4 are independently a hydrogen atom, a C1-C4 alkyl group, a C1-C4 alkoxy group, a phenyl group, a benzyl group, a phenoxy group, or —M(R′)3, M is Si, Ge, Sn, or OSi, and each R′ independently is a C1-C4 alkyl group, a C1-C4 alkoxy group, a phenyl group, or a phenoxy group.Type: GrantFiled: September 13, 2001Date of Patent: January 13, 2004Assignee: Samsung Electronics Co., Ltd.Inventors: Hyun-woo Kim, Sang-gyun Woo
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Publication number: 20030235788Abstract: A negative resist composition and a method for patterning semiconductor devices using the composition are provided. The negative resist composition contains an alkali-soluble hydroxy-substituted base polymer, a silicon-containing crosslinker having an epoxy ring, and a photoacid generator. In the method for patterning semiconductor devices, fine patterns are formed according to a bi-layer resist process using the negative resist composition.Type: ApplicationFiled: March 26, 2003Publication date: December 25, 2003Applicant: Samsung Electronics Co., Ltd.Inventor: Sang-Jun Choi
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Publication number: 20030215748Abstract: Photoresist compositions having a resin binder with an acid labile blocking group with an activation energy in excess of 20 Kcal/mol. for deblocking, a photoacid generator capable of generating a halogenated sulfonic acid upon photolysis and optionally, a base.Type: ApplicationFiled: June 9, 2003Publication date: November 20, 2003Applicant: Shipley Company, L.L.C.Inventors: James W. Thackeray, James F. Cameron, Roger F. Sinta
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Publication number: 20030215745Abstract: A process for producing a polymer compound having a double bond in a side chain, wherein a functional group represented by the following formula (1) is subjected to an elimination reaction to form the polymer compound which includes another functional group having the double bond in the side chain thereof represented by the following formula (2): 1Type: ApplicationFiled: March 11, 2003Publication date: November 20, 2003Applicant: FUJI PHOTO FILM CO., LTD.Inventor: Kazuhiro Fujimaki
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Publication number: 20030203307Abstract: A radiation-sensitive resin composition comprising: (A) an alkali insoluble or scarcely alkali-soluble resin having an acid-dissociable protecting group of the following formula [I], 1Type: ApplicationFiled: February 21, 2003Publication date: October 30, 2003Inventors: Akimasa Soyano, Hiroyuki Ishii, Hidemitsu Ishida, Motoyuki Shima, Yukio Nishimura
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Publication number: 20030203305Abstract: A negative resist composition comprising (A-1) an alkali-soluble resin containing a repeating unit represented by formula (1) defined in the specification, (A-2) an alkali-soluble resin containing a repeating unit represented by formula (2) defined in the specification, (B) a crosslinking agent crosslinking with the alkali-soluble resin (A-1) or (A-2) by the action of an acid, (C) a compound that generates an acid upon irradiation of an actinic ray or radiation, and (D) a nitrogen-containing basic compound.Type: ApplicationFiled: March 26, 2003Publication date: October 30, 2003Applicant: FUJI PHOTO FILM CO., LTD.Inventors: Shoichiro Yasunami, Yutaka Adegawa, Koji Shirakawa
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Publication number: 20030203309Abstract: 1. A radiation-sensitive resin composition comprising: (A) a resin insoluble or scarcely soluble in alkali, but becomes alkali soluble by the action of an acid and (B) a photoacid generator.Type: ApplicationFiled: March 13, 2003Publication date: October 30, 2003Inventors: Yukio Nishimura, Hiroyuki Ishii, Masafumi Yamamoto, Isao Nishimura
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Publication number: 20030198894Abstract: A resist composition for an electron beam, EUV or X-ray comprising (A1) a compound that has a reduction potential higher than that of diphenyl iodonium salt and generates an acid upon irradiation of an actinic ray or radiation.Type: ApplicationFiled: February 11, 2003Publication date: October 23, 2003Applicant: FUJI PHOTO FILM CO., LTD.Inventors: Kazuyoshi Mizutani, Hyou Takahashi
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Publication number: 20030194639Abstract: The present invention provides a positive resist composition comprising a resin which itself is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid, and an acid generator, wherein the content of halogen atoms in the resin is 40% by weight or more, at least one of structural units constituting the resin is a structural unit having an alicyclic hydrocarbon skeleton, and the structural unit having an alicyclic hydrocarbon skeleton contains therein at least one group rendering the resin soluble in an alkali aqueous solution by the action of an acid, and at least one halogen atom.Type: ApplicationFiled: February 14, 2003Publication date: October 16, 2003Inventors: Yoshiko Miya, Kouji Toishi, Kazuhiko Hashimoto
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Publication number: 20030180635Abstract: A visible radiation sensitive composition is disclosed. The composition comprises at least one ethylenically unsaturated monomer capable of free radical initiated addition polymerization; optionally, at least one binder; and a photoinitiator system comprising a coinitiator and a cyanopyridone sensitizer. The coinitiator preferably comprises a metallocene and an onium compound.Type: ApplicationFiled: February 12, 2002Publication date: September 25, 2003Inventors: Harald Baumann, Michael Flugel
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Publication number: 20030165776Abstract: A negative resist composition comprising (A) an alkali-soluble polymer, (B) a cross-linking agent forming cross-links between molecules of the alkali-soluble polymer (A) under the action of an acid and (C) a specified acid generator, which can satisfy all of performance requirements concerning sensitivity, resolution, pattern profile and line-edge roughness in the pattern formation by irradiation with electron beams or X-rays.Type: ApplicationFiled: December 30, 2002Publication date: September 4, 2003Applicant: FUJI PHOTO FILM CO., LTD.Inventors: Shoichiro Yasunami, Kunihiko Kodama
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Publication number: 20030157433Abstract: The present invention relates to IR-sensitive compositions suitable for the manufacture of printing plates developable on-press. The IR-sensitive compositions comprise a first polymeric binder which does not comprise acidic groups having a pKa value≦8; a second polymeric binder comprising polyether groups; an initiator system; and a free radical polymerizable system comprising at least one member selected from unsaturated free radical polymerizable monomers, free radical polymerizable oligomers and polymers containing C═C bonds in the back bone and/or in the side chain groups. The initiator system includes (i) at least one compound capable of absorbing IR radiation; (ii) at least one compound capable of producing radicals selected from polyhaloalkyl-substituted compounds; and (iii) at least one polycarboxylic acid of formula R4—(CR5R6)r—Y—CH2COOH, wherein oxi<redii+1.Type: ApplicationFiled: February 4, 2002Publication date: August 21, 2003Inventors: Hans-Joachim Timpe, Friederike Von Gyldenfeldt
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Publication number: 20030152865Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.Type: ApplicationFiled: February 21, 2003Publication date: August 14, 2003Inventors: Katsumi Oomori, Hiroto Yukawa, Ryusuke Uchida, Kazufumi Sato
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Publication number: 20030129534Abstract: A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.Type: ApplicationFiled: December 3, 2002Publication date: July 10, 2003Inventors: Akiyoshi Yamazaki, Naoto Motoike, Daisuke Kawana, Kazufumi Sato
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Patent number: 6576393Abstract: Disclosed are a composition for a resist underlayer film excellent in reproducibility of a resist pattern, excellent in adhesion to a resist, excellent in resistance to a developing solution used after exposure of the resist and decreased in film loss in oxygen ashing of the resist; and a method for producing the same, the composition comprising: both or either of a hydrolysate and a condensate of (A) at least one compound selected from the group consisting of (A-1) a compound represented by the following general formula (1): R1aSi(OR2)4−a (1) wherein R1 represents a hydrogen atom, a fluorine atom or a univalent organic group, R2 represents a univalent organic group, and a represents an integer of 0 to 2, and (A-2) a compound represented by the following general formula (2): R3b(R4O)3−bSi—(R7)d—Si(OR5)3−cR6c (2) wherein R3, R4, R5 and R6, which may be the same or different, each represent univalent organic groups, b and c, which may be the same or diffeType: GrantFiled: April 7, 2000Date of Patent: June 10, 2003Assignee: JSR CorporationInventors: Hikaru Sugita, Akio Saito, Kinji Yamada, Michinori Nishikawa, Yoshihisa Ohta, Yoshiji Yuumoto
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Patent number: 6569603Abstract: There are disclosed a light-sensitive composition which comprises (A) a polymer having a phenyl group substituted by a vinyl group at a side chain, (B) a photopolymerization initiator and (C) a sensitizer which sensitizes the photo-polymerization initiator, or a light-sensitive composition which comprises (A′) a polymer, the above-mentioned (B) and (C), and (D) a monomer having at least two phenyl groups each of which is substituted by a vinyl group in the molecule of the monomer; and a method of forming a relief image which comprises coating the light-sensitive composition as mentioned above on a support, exposing the composition by exposure or scanning exposure and developing the same to form a relief image on the support.Type: GrantFiled: January 30, 2001Date of Patent: May 27, 2003Assignee: Mitsubishi Paper Mills LimitedInventor: Akira Furukawa