Radiation-activated Cross-linking Agent Containing Patents (Class 430/927)
  • Patent number: 9023587
    Abstract: A polymer comprising recurring units (a) of styrene having an HFA group and an ester group adjacent thereto and recurring units (b) having a hydroxyl group is used as base resin to formulate a negative resist composition. The negative resist composition has a high dissolution contrast in alkaline developer, high sensitivity, high resolution, good pattern profile after exposure, and a suppressed acid diffusion rate.
    Type: Grant
    Filed: December 23, 2013
    Date of Patent: May 5, 2015
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Koji Hasegawa, Daisuke Domon
  • Patent number: 9023582
    Abstract: A photosensitive polymer includes a repeating unit represented by Formula 1 and the photosensitive polymer has a weight average molecule weight of from about 3,000 to about 50,000:
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: May 5, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventor: Sang-Jun Choi
  • Patent number: 9023584
    Abstract: A radiation-sensitive composition includes a compound represented by a formula (1), and a polymer having a structural unit that includes an acid-labile group. In the formula (1), R1 represents a group having a polar group; n is an integer of 1 to 4, wherein, in a case where R1 is present in a plurality of number, the plurality of R1s are identical or different, and optionally at least two R1s taken together represent a cyclic structure; A represents an alicyclic hydrocarbon group having a valency of (n+1); and M+ represents a monovalent onium cation.
    Type: Grant
    Filed: May 24, 2013
    Date of Patent: May 5, 2015
    Assignee: JSR Corporation
    Inventor: Ken Maruyama
  • Patent number: 9017920
    Abstract: A film includes base and a photosensitive layer formed on the base. The photosensitive layer substantially includes a first photosensitive agent, a second photosensitive agent, and a thermosol. The first photosensitive agent is water-soluble. The second photosensitive agent is an aromatic ketone compound or a benzoin ether compound. The method for manufacturing the film and the masking method using the film is also provided.
    Type: Grant
    Filed: July 2, 2012
    Date of Patent: April 28, 2015
    Assignees: Shenzhen Futaihong Precision Industry Co., Ltd., FIH (Hong Kong) Limited
    Inventors: Quan Zhou, Chao-Sheng Huang, Xin-Wu Guan
  • Patent number: 9017922
    Abstract: A chemically amplified resist composition comprising a base polymer and an amine quencher in the form of a ?-alanine, ?-aminobutyric acid, 5-aminovaleric acid, 6-aminocaproic acid, 7-aminoheptanoic acid. 8-aminooctanoic acid or 9-aminononanoic acid derivative having an unsubstituted carboxyl group has a high contrast of alkaline dissolution in rate before and after exposure and forms a pattern of good profile at a high resolution, minimal roughness and wide DOF.
    Type: Grant
    Filed: September 10, 2013
    Date of Patent: April 28, 2015
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Jun Hatakeyama, Masayoshi Sagehashi
  • Patent number: 8999624
    Abstract: The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.
    Type: Grant
    Filed: June 29, 2012
    Date of Patent: April 7, 2015
    Assignee: International Business Machines Corporation
    Inventors: Kuang-Jung Chen, Steven J. Holmes, Wu-Song Huang, Ranee Kwong, Sen Liu
  • Patent number: 8986918
    Abstract: The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.
    Type: Grant
    Filed: November 15, 2013
    Date of Patent: March 24, 2015
    Assignee: International Business Machines Corporation
    Inventors: Gregory Breyta, Kuang-Jung Chen, Steven J. Holmes, Wu-Song Huang, Sen Liu
  • Patent number: 8956802
    Abstract: Provided is a negative type pattern forming method that satisfies high sensitivity, high resolution, good roughness and good dry etching resistance at the same time, and further, has a good development time dependency, the method including (i) forming a film by a chemical amplification resist composition containing (A) a fullerene derivative having an acid-decomposable group, (B) a compound generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent, (ii) exposing the film, and (iii) developing the exposed film by using an organic solvent-containing developer.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: February 17, 2015
    Assignee: FUJIFILM Corporation
    Inventor: Kaoru Iwato
  • Patent number: 8932796
    Abstract: The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.
    Type: Grant
    Filed: November 10, 2011
    Date of Patent: January 13, 2015
    Assignee: International Business Machines Corporation
    Inventors: Kuang-Jung Chen, Wu-Song S. Huang, Sen Liu, Steven J. Holmes, Gregory Breyta
  • Patent number: 8906590
    Abstract: The invention relates to an antireflective coating composition comprising a crosslinker and a crosslinkable polymer capable of being crosslinked by the crosslinker, where the crosslinkable polymer comprises a unit represented by structure (1): -A-B-C-??(1) where A is a fused aromatic ring, B has a structure (2), and C is a hydroxybiphenyl of structure (3) where R1 is C1-C4alkyl and R2 is C1-C4alkyl. The invention further relates to a process for forming an image using the composition.
    Type: Grant
    Filed: January 17, 2012
    Date of Patent: December 9, 2014
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Dalil M Rahman, Douglas McKenzie, Jianhui Shan, JoonYeon Cho, Salem K. Mullen, Clement Anyadiegwu
  • Patent number: 8889919
    Abstract: A cyclic compound represented by formula (1): wherein L, R1, R?, and m are as defined in the specification. The cyclic compound of formula (1) is highly soluble to a safety solvent, highly sensitive, and capable of forming resist patterns with good profile. Therefore, the cyclic compound is useful as a component of a radiation-sensitive composition.
    Type: Grant
    Filed: August 26, 2010
    Date of Patent: November 18, 2014
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Masatoshi Echigo, Hiromi Hayashi
  • Patent number: 8883937
    Abstract: A cyclic compound represented by formula (1): wherein L, R1, R?, and m are as defined in the specification. The cyclic compound of formula (1) is highly soluble to a safety solvent, highly sensitive, and capable of forming resist patterns with good profile. Therefore, the cyclic compound is useful as a component of a radiation-sensitive composition.
    Type: Grant
    Filed: August 27, 2010
    Date of Patent: November 11, 2014
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Masatoshi Echigo, Hiromi Hayashi
  • Patent number: 8877423
    Abstract: An actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin that contains a repeating unit represented by formula (I) as defined in the specification, a repeating unit represented by formula (II) as defined in the specification and a repeating unit represented by formula (III-a) or (III-b) as defined in the specification; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) a solvent, wherein the solvent (C) contains ethyl lactate, and a film and a pattern forming method using the composition are provided.
    Type: Grant
    Filed: June 30, 2010
    Date of Patent: November 4, 2014
    Assignee: FUJIFILM Corporation
    Inventors: Kana Fujii, Toru Fujimori
  • Patent number: 8841060
    Abstract: An actinic-ray-sensitive or radiation-sensitive resin composition which is capable of improving line edge roughness (LER) and inhibiting pattern collapse, a resist film and a pattern forming method each using the same, a method for preparing an electronic device, and an electronic device are provided. The actinic-ray-sensitive or radiation-sensitive resin composition contains: (A) a resin having repeating units having a structure represented by any one of the following general formulae (I-1) to (I-3), and repeating units containing at least one selected from the group consisting of a lactone structure, a sultone structure, and a cyano group; and (B) a compound that generates an acid by irradiation with actinic rays or radiations.
    Type: Grant
    Filed: June 29, 2012
    Date of Patent: September 23, 2014
    Assignee: FUJIFILM Corporation
    Inventors: Shohei Kataoka, Yusuke Iizuka, Akinori Shibuya, Tomoki Matsuda, Naohiro Tango
  • Patent number: 8828651
    Abstract: A positive-type photosensitive resin composition comprising component (A): an alkali-soluble resin having a functional group which undergoes heat crosslinking reaction with a compound of component (B), a functional group for film curing which undergoes thermoset reaction with a compound of component (C), and a number average molecular weight of 2,000 to 30,000; component (B): a compound having two or more vinyl ether groups per molecule; component (C): a compound having two or more blocked isocyanate groups per molecule; component (D): a photoacid generator; and component (E): a solvent. A production process of the positive-type photosensitive resin composition comprising mixing the above-mentioned components and maintaining the mixture at a temperature higher than room temperature. A cured film manufactured by using the positive-type photosensitive resin composition.
    Type: Grant
    Filed: July 24, 2006
    Date of Patent: September 9, 2014
    Assignee: Nissan Chemical Industries, Ltd.
    Inventor: Tadashi Hatanaka
  • Patent number: 8828644
    Abstract: The present application relates to a novel compound, a photosensitive composition comprising the same and a photosensitive material.
    Type: Grant
    Filed: January 24, 2013
    Date of Patent: September 9, 2014
    Assignee: LG Chem, Ltd.
    Inventors: Keon Woo Lee, Sang Kyu Kwak, Changsoon Lee, Hyehyeon Kim, Saehee Kim
  • Patent number: 8815491
    Abstract: A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition exhibits a high resolution and forms a negative resist pattern of a profile with minimized LER and undercut.
    Type: Grant
    Filed: February 28, 2012
    Date of Patent: August 26, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Keiichi Masunaga, Daisuke Domon, Satoshi Watanabe
  • Patent number: 8808965
    Abstract: A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains (A) a resin containing a repeating unit having two or more hydroxyl groups, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent and (D) a solvent; a pattern formed by the pattern forming method; a chemical amplification resist composition used in the pattern forming method; and a resist film formed using the chemical amplification resist composition.
    Type: Grant
    Filed: January 13, 2011
    Date of Patent: August 19, 2014
    Assignee: FUJIFILM Corporation
    Inventors: Kaoru Iwato, Shinji Tarutani, Yuichiro Enomoto, Sou Kamimura, Keita Kato
  • Patent number: 8795943
    Abstract: The present invention relates to a negative photoresist composition and a patterning method for device in which a photoresist pattern having a high sensitivity with a good reverse taper profile can be formed not only to realize an effective patterning of various thin films but also to facilitate removal of the photoresist pattern after the patterning. The photoresist composition comprises an alkali-soluble binder resin; a halogen-containing first photo-acid generator; a triazine-based second photo-acid generator; a cross-linking agent having an alkoxy structure; and a solvent.
    Type: Grant
    Filed: May 4, 2011
    Date of Patent: August 5, 2014
    Assignee: LG Chem, Ltd.
    Inventors: Chan-Hyo Park, Kyung-Jun Kim, Yu-Na Kim
  • Patent number: 8748078
    Abstract: A cyclic compound represented by formula (1): wherein L, R1, R?, and m are as defined in the specification. The cyclic compound of formula (1) is highly soluble to a safety solvent, highly sensitive, and capable of forming resist patterns with good profile. Therefore, the cyclic compound is useful as a component of a radiation-sensitive composition.
    Type: Grant
    Filed: August 30, 2010
    Date of Patent: June 10, 2014
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Hiromi Hayashi, Masatoshi Echigo, Dai Oguro
  • Patent number: 8722311
    Abstract: There is provided a resist composition suitable for forming a microlens which is excellent in transparency, heat resistance, and sensitivity characteristics, excellent in solubility in a developer, and as the result thereof has high resolution. A positive resist composition comprising; a component (A): an alkali-soluble polymer; a component (B): a compound having an organic group to be photolyzed to generate an alkali-soluble group; a component (C): a crosslinkable compound of Formula (1): [where R1, R2, and, R3 are independently a C1-6 alkylene group or oxyalkylene group which are optionally branched; and E1, E2, and E3 are independently a group containing a structure of Formula (2) or Formula (3): (where R4 is a hydrogen atom or a methyl group)]; and a component (D): a solvent.
    Type: Grant
    Filed: January 19, 2011
    Date of Patent: May 13, 2014
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Shojiro Yukawa, Shinya Arase, Toshiaki Takeyama, Yuki Endo, Takeo Moro
  • Patent number: 8715901
    Abstract: A resin composition which, in forming a fine pattern by a heat treatment of a resist pattern formed by using a photoresist, can be applied onto the resist pattern, can cause the resist pattern to smoothly shrink by heat treatment, and can be easily washed away by a treatment with an alkaline aqueous solution, and a method for efficiently forming a fine resist pattern using the resin composition are provided. The resin composition comprises a resin containing a hydroxyl group, a crosslinking component, and an alcohol solvent containing water in an amount of 10 wt % or less for the total solvent, wherein the alcohol in the alcohol solvent is a monovalent alcohol having 1 to 8 carbon atoms.
    Type: Grant
    Filed: May 24, 2005
    Date of Patent: May 6, 2014
    Assignee: JSR Corporation
    Inventors: Hirokazu Sakakibara, Takayoshi Abe, Takashi Chiba, Toru Kimura
  • Patent number: 8715904
    Abstract: A low surface energy photoresist composition is described that comprises a silicone-polyether block copolymer, wherein the silicone block comprises 35 wt. % or more of said copolymer. When compounded with a photoresist composition, the composition enables the release of a phototool from the photoresist layer.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: May 6, 2014
    Assignee: 3M Innovative Properties Company
    Inventors: Zai-Ming Qiu, Douglas C. Fall
  • Patent number: 8658341
    Abstract: There is provided to a pattern reversal film forming composition that is capable of forming a pattern reversal film which is not mixed with a resist pattern formed on a substrate, and that is only capable of forming a pattern reversal film advantageously covering the pattern, but also irrespective of whether the resist pattern is coarse or fine, capable of forming a planar film excellent in temporal stability on the pattern. A pattern reversal film forming composition including a polysiloxane, an additive and an organic solvent, characterized in that the polysiloxane is a product of a hydrolysis and/or condensation reaction of a silane compound containing a tetraalkoxysilane of Si(OR1)4 and an alkoxysilane of XnSi(OR2)4-n, and the tetraalkoxysilane is used in a ratio of 1 to 50% by mole based on the number of moles of the whole silane compound; and a pattern reversal film and a method of forming a reversed pattern in which the composition is used.
    Type: Grant
    Filed: April 21, 2010
    Date of Patent: February 25, 2014
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Daisuke Maruyama, Hiroaki Yaguchi, Yasushi Sakaida
  • Patent number: 8647810
    Abstract: A resist lower layer film-forming composition includes (A) a polymer that includes a cyclic carbonate structure. The polymer (A) includes a structural unit (I) shown by the following formula (1).
    Type: Grant
    Filed: September 29, 2011
    Date of Patent: February 11, 2014
    Assignee: JSR Corporation
    Inventors: Kazuo Nakahara, Tomoki Nagai
  • Patent number: 8586282
    Abstract: The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
    Type: Grant
    Filed: March 22, 2012
    Date of Patent: November 19, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Satoshi Watanabe, Akinobu Tanaka, Takeru Watanabe, Takeshi Kinsho
  • Patent number: 8586283
    Abstract: A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.
    Type: Grant
    Filed: September 10, 2012
    Date of Patent: November 19, 2013
    Assignee: International Business Machines Corporation
    Inventors: Martin Glodde, Dario L. Goldfarb, Wu-Song Huang, Wai-Kin Li, Sen Liu, Pushkara R. Varanasi, Libor Vyklicky
  • Patent number: 8557509
    Abstract: There is disclosed a negative resist composition comprising at least (A) a base resin that is alkaline-soluble and is made alkaline-insoluble by action of an acid, and/or a combination of a base resin that is alkaline-soluble and is made alkaline-insoluble by reaction with a crosslinker by action of an acid, with a crosslinker, (B) an acid generator, and (C) a compound containing a nitrogen as a basic component, and forming a resist film having the film thickness X (nm) of 50 to 100 nm, wherein, in the case that the resist film is formed from the negative resist composition under the film-forming conditions for the pattern formation, a dissolution rate of the resist film into the alkaline developer used in the development treatment for the pattern formation is 0.0333X?1.0 (nm/second) or more and 0.0667X?1.6 (nm/second) or less.
    Type: Grant
    Filed: April 16, 2010
    Date of Patent: October 15, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Akinobu Tanaka, Keiichi Masunaga, Daisuke Domon, Satoshi Watanabe
  • Patent number: 8557502
    Abstract: To provide a negative photosensitive composition applicable to preparation of partition walls which can maintain excellent ink repellency even after ink affinity-imparting treatment, and partition walls for an optical device using such a composition. A negative photosensitive composition comprising the following ink repellent (A) in an amount of from 0.
    Type: Grant
    Filed: January 25, 2011
    Date of Patent: October 15, 2013
    Assignee: Asahi Glass Company, Limited
    Inventor: Yutaka Furukawa
  • Patent number: 8535872
    Abstract: An etch resistant thermally curable Underlayer composition for use in a multiplayer lithographic process for producing a photolithographic bilayer coated substrate, the composition being a composition of: (a) a polymer comprising repeating units of Structure I, II and III (b) at least one crosslinking agent; (c) at least one thermal acid generator; and (d) at least one solvent.
    Type: Grant
    Filed: March 21, 2012
    Date of Patent: September 17, 2013
    Assignee: Fujifilm Electronic Materials, U.S.A., Inc.
    Inventors: Binod B. De, Ognian N. Dimov, Stephanie J. Dilocker
  • Patent number: 8501383
    Abstract: Cyanurate compositions are provided that are particularly useful as a reagent to form a resin component of a coating composition underlying an overcoated photoresist. Preferred isocyanurates compound comprise substitution of multiple cyanurate nitrogen ring atoms by at least two distinct carboxy and/or carboxy ester groups.
    Type: Grant
    Filed: May 18, 2010
    Date of Patent: August 6, 2013
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Anthony Zampini, Vipul Jain, Cong Liu, Suzanne Coley, Owendi Ongayi
  • Patent number: 8470511
    Abstract: A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble polymer, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component, the polymer (A) turning alkali insoluble under the catalysis of acid. A basic polymer having a secondary or tertiary amine structure on a side chain serves as components (A) and (C). Processing the negative resist composition by EB or EUV lithography process may form a fine size resist pattern with advantages including uniform diffusion of base, improved LER, controlled deactivation of acid at the substrate interface, and a reduced degree of undercut.
    Type: Grant
    Filed: February 15, 2011
    Date of Patent: June 25, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Keiichi Masunaga, Satoshi Watanabe, Akinobu Tanaka, Daisuke Domon
  • Patent number: 8470509
    Abstract: There is disclosed a negative resist composition wherein a base resin contains at least repeating units represented by the following general formula (1) and general formula (2) and has a weight average molecular weight of 1,000 to 10,000, and the compound containing a nitrogen atom as a basic component contains one or more kinds of amine compounds having a carboxyl group and not having a hydrogen atom covalently bonded to a base-center nitrogen atom. There can be a negative resist composition in which a bridge hardly occurs, substrate dependence is low and a pattern with a high sensitivity and a high resolution can be formed, and a patterning process using the same.
    Type: Grant
    Filed: October 12, 2010
    Date of Patent: June 25, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Akinobu Tanaka, Keiichi Masunaga, Daisuke Domon, Satoshi Watanabe
  • Patent number: 8465902
    Abstract: The invention relates to an underlayer coating composition comprising a polymer, where the polymer comprises at least one hydroxyaromatic unit in the backbone of the polymer phenol which has a pendant group comprising a fluoro or iodo moiety, and at least one unit comprising an aminoplast. The invention further relates to a process for forming an image using the composition, especially for EUV.
    Type: Grant
    Filed: February 8, 2011
    Date of Patent: June 18, 2013
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Huirong Yao, Zachary Bogusz, Guanyang Lin, Mark Neisser
  • Patent number: 8455176
    Abstract: Developable bottom antireflective coating compositions are provided.
    Type: Grant
    Filed: November 12, 2008
    Date of Patent: June 4, 2013
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Francis Houlihan, Lin Zhang, Alberto Dioses, Meng Li
  • Patent number: 8420289
    Abstract: An aromatic ring-containing polymer, a polymer mixture, an antireflective hardmask composition, and a method for patterning a material on a substrate, the aromatic ring-containing polymer including at least one aromatic ring-containing polymer represented by Formulae 1, 2, or 3.
    Type: Grant
    Filed: October 1, 2009
    Date of Patent: April 16, 2013
    Assignee: Cheil Industries, Inc.
    Inventors: Min Soo Kim, Dong Seon Uh, Chang Il Oh, Kyong Ho Yoon, Kyung Hee Hyung, Jin Kuk Lee, Jong-Seob Kim, Hwan Sung Cheon, Irina Nam, Nataliya Tokareva
  • Patent number: 8394573
    Abstract: A method for reducing a photoresist critical dimension, the method comprising depositing a photoresist film on a substrate, wherein the photoresist film includes a thermal base generator; patterning the photoresist film to form a first patterned film possessing a first critical dimension; depositing a crosslinkable film over the first patterned film; heat-activating the first patterned film, either before or after depositing the crosslinkable film, to release a base in the first patterned film and cause crosslinking in the crosslinkable film in contact with the first patterned film; and developing the crosslinkable film to remove non-crosslinked soluble portions therein to form a second patterned film possessing a reduced critical dimension compared to the first critical dimension.
    Type: Grant
    Filed: September 16, 2010
    Date of Patent: March 12, 2013
    Assignee: International Business Machines Corporation
    Inventors: Wu-Song Huang, Kuang-Jung Chen, Wai-Kin Li, Sen Liu
  • Patent number: 8383318
    Abstract: Acid-sensitive, developer-soluble bottom anti-reflective coating compositions are provided, along with methods of using such compositions and microelectronic structures formed thereof. The compositions preferably comprise a crosslinkable polymer dissolved or dispersed in a solvent system. The polymer preferably comprises recurring monomeric units having adamantyl groups. The compositions also preferably comprise a crosslinker, such as a vinyl ether crosslinking agent, dispersed or dissolved in the solvent system with the polymer. In some embodiments, the composition can also comprise a photoacid generator (PAG) and/or a quencher. The bottom anti-reflective coating compositions are thermally crosslinkable, but can be decrosslinked in the presence of an acid to be rendered developer soluble.
    Type: Grant
    Filed: February 19, 2010
    Date of Patent: February 26, 2013
    Assignee: Brewer Science Inc.
    Inventors: Jim D. Meador, Joyce A. Lowes, Ramil-Marcelo L. Mercado
  • Patent number: 8349533
    Abstract: A resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film. The resist lower-layer composition is insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid by heating at a temperature of 100° C. or higher.
    Type: Grant
    Filed: October 20, 2009
    Date of Patent: January 8, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Youichi Ohsawa, Jun Hatakeyama, Takeru Watanabe, Takeshi Kinsho
  • Patent number: 8329384
    Abstract: A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.
    Type: Grant
    Filed: May 24, 2010
    Date of Patent: December 11, 2012
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takeru Watanabe, Kazuhiro Katayama, Masashi Iio, Jun Hatakeyama, Tsunehiro Nishi, Takeshi Kinsho
  • Patent number: 8323871
    Abstract: An antireflective hardmask composition layer including a polymer having Si—O and non-silicon inorganic units in its backbone. The polymer includes chromophore and transparent moieties and a crosslinking component. The antireflective hardmask composition layer is employed in a method of forming a patterned material on a substrate.
    Type: Grant
    Filed: February 24, 2010
    Date of Patent: December 4, 2012
    Assignee: International Business Machines Corporation
    Inventors: Sean D. Burns, David R. Medeiros, Dirk Pfeiffer
  • Patent number: 8323868
    Abstract: Bilayer systems include a bottom layer formed of polydimethylglutarimide, an acid labile dissolution inhibitor and a photoacid generator. The bilayer system can be exposed and developed in a single exposure and development process.
    Type: Grant
    Filed: November 6, 2009
    Date of Patent: December 4, 2012
    Assignee: International Business Machines Corporation
    Inventors: Joy Cheng, Ho-Cheol Kim, Hiroshi Ito, Atsuko Ito, legal representative, Hoa D. Truong
  • Patent number: 8298747
    Abstract: To provide a photosensitive resin composition in which a hardened film obtained from the photosensitive resin composition has properties comparable to those of a film hardened at a high temperature, a method for manufacturing a patterned hardened film using the photosensitive resin composition, and an electronic part. The photosensitive resin composition includes (a) a polybenzoxazole precursor having a repeating unit represented by a general formula (I): wherein U and V represent a divalent organic group, and at least one of U and V is a group containing an aliphatic chain structure having 1 to 30 carbon atoms; (b) a photosensitizer; (c) a solvent; and (d) a crosslinking agent capable of causing crosslinking or polymerization by heating.
    Type: Grant
    Filed: March 6, 2008
    Date of Patent: October 30, 2012
    Assignee: Hitachi Chemical Dupont Microsystems, Ltd.
    Inventors: Tomonori Minegishi, Rika Nogita, Kenichi Iwashita
  • Patent number: 8293458
    Abstract: Disclosed is a method for manufacturing fine patterns of semiconductor devices using a double exposure patterning process for manufacturing the second photoresist patterns by simply exposing without an exposure mask. The method comprises the steps of: forming a first photoresist pattern on a semiconductor substrate on which a layer to be etched is formed; coating a composition for a mirror interlayer on the first photoresist pattern to form a mirror interlayer; forming a photoresist layer on the resultant; and forming a second photoresist pattern which is made by a scattered reflection of the mirror-interlayer and positioned between the first photoresist patterns, by exposing the photoresist layer to a light having energy which is lower than a threshold energy (Eth) of the photoresist layer without an exposure mask, and then developing the same.
    Type: Grant
    Filed: November 13, 2009
    Date of Patent: October 23, 2012
    Assignee: Dongjin Semichem .Co., Ltd.
    Inventors: Jun-Gyeong Lee, Jung-Youl Lee, Jeong-Sik Kim, Eu-Jean Jang, Jae-Woo Lee, Deog-Bae Kim, Jae-Hyun Kim
  • Patent number: 8293451
    Abstract: A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.
    Type: Grant
    Filed: August 18, 2009
    Date of Patent: October 23, 2012
    Assignee: International Business Machines Corporation
    Inventors: Martin Glodde, Dario L. Goldfarb, Wu-Song Huang, Wai-Kin Li, Sen Liu, Pushkara R. Varanasi, Libor Vyklicky
  • Patent number: 8227172
    Abstract: There is provided a resist underlayer film forming composition used in a lithography process for producing semiconductor devices. A method of producing a semiconductor device comprising: forming a coating film by applying a resist underlayer film forming composition containing a polymer, a crosslinker and a photoacid generator on a semiconductor substrate; forming an underlayer film by irradiating light to the coating film; and forming a photoresist by applying a photoresist composition on the underlayer film and heating the resultant layer. The polymer polymer is a polymer having a benzene ring or a hetero ring in a main chain or a side chain bonded to the main chain, and the content rate of a benzene ring in the polymer is 30 to 70% by mass. The polymer may be a polymer containing a lactone structure.
    Type: Grant
    Filed: October 10, 2007
    Date of Patent: July 24, 2012
    Assignee: Nissan Chemical Industries, Ltd.
    Inventors: Yusuke Horiguchi, Satoshi Takei, Tetsuya Shinjo
  • Patent number: 8216767
    Abstract: A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photodegradable base material; and exposing at least a portion of the second material layer.
    Type: Grant
    Filed: September 8, 2009
    Date of Patent: July 10, 2012
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Wei Wang, Ching-Yu Chang, Tsai-Sheng Gau, Burn Jeng Lin
  • Patent number: 8198009
    Abstract: The object of the present invention is to provide a process for forming a resist pattern that is capable to utilize excimer laser beam, the thickening level of the resist pattern is controllable uniformly, constantly and precisely, without being affected substantially by environmental changes such as temperatures and humidity, and storage period, and space pattern of resist may be formed with a fineness exceeding exposure limits or resolution limits of available irradiation sources. The process for producing a semiconductor device is characterized in that forming a resist pattern on a surface of workpiece, coating a resist pattern thickening material on the resist pattern, thickening the resist pattern to form a thickened resist pattern, and patterning the surface of workpiece by etching using the thickened resist pattern as a mask, wherein the resist pattern thickening material comprises a resin, and exhibits a pH value of above 7 and not over 14 at coating or after coating on the resist pattern.
    Type: Grant
    Filed: August 13, 2010
    Date of Patent: June 12, 2012
    Assignee: Fujitsu Limited
    Inventors: Miwa Kozawa, Koji Nozaki, Takahisa Namiki
  • Patent number: 8173349
    Abstract: A polymer compound is provided which is excellent in heat resistance and insulating property, and a photosensitive resin composition is provided which includes the polymer compound, and may form a cured pattern or a cured film excellent in pattern forming property, resolution, heat resistance and insulating property. Also, a method for forming a cured pattern excellent in pattern forming property, resolution, heat resistance and insulating property using the photosensitive resin composition, and an electronic device having high reliance for a semiconductor device or for a display device are provided. The photosensitive resin composition includes a polymer compound obtained by reacting a monomer represented by Formula (1) and a monomer represented by Formula (2), and a photosensitizing agent.
    Type: Grant
    Filed: March 25, 2009
    Date of Patent: May 8, 2012
    Assignee: FUJIFILM Corporation
    Inventors: Masanori Hikita, Yasufumi Ooishi, Kenichiro Sato
  • Patent number: 8168367
    Abstract: The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
    Type: Grant
    Filed: June 3, 2009
    Date of Patent: May 1, 2012
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Satoshi Watanabe, Akinobu Tanaka, Takeru Watanabe, Takeshi Kinsho