Abstract: A radiation-sensitive composition includes a compound represented by a formula (1), and a polymer having a structural unit that includes an acid-labile group. In the formula (1), R1 represents a group having a polar group; n is an integer of 1 to 4, wherein, in a case where R1 is present in a plurality of number, the plurality of R1s are identical or different, and optionally at least two R1s taken together represent a cyclic structure; A represents an alicyclic hydrocarbon group having a valency of (n+1); and M+ represents a monovalent onium cation.

Abstract: A polymer comprising recurring units (a) of styrene having an HFA group and an ester group adjacent thereto and recurring units (b) having a hydroxyl group is used as base resin to formulate a negative resist composition. The negative resist composition has a high dissolution contrast in alkaline developer, high sensitivity, high resolution, good pattern profile after exposure, and a suppressed acid diffusion rate.

Abstract: A photosensitive polymer includes a repeating unit represented by Formula 1 and the photosensitive polymer has a weight average molecule weight of from about 3,000 to about 50,000:

Abstract: A chemically amplified resist composition comprising a base polymer and an amine quencher in the form of a ?-alanine, ?-aminobutyric acid, 5-aminovaleric acid, 6-aminocaproic acid, 7-aminoheptanoic acid. 8-aminooctanoic acid or 9-aminononanoic acid derivative having an unsubstituted carboxyl group has a high contrast of alkaline dissolution in rate before and after exposure and forms a pattern of good profile at a high resolution, minimal roughness and wide DOF.

Abstract: A film includes base and a photosensitive layer formed on the base. The photosensitive layer substantially includes a first photosensitive agent, a second photosensitive agent, and a thermosol. The first photosensitive agent is water-soluble. The second photosensitive agent is an aromatic ketone compound or a benzoin ether compound. The method for manufacturing the film and the masking method using the film is also provided.

Abstract: The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.

Abstract: The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.

Abstract: Provided is a negative type pattern forming method that satisfies high sensitivity, high resolution, good roughness and good dry etching resistance at the same time, and further, has a good development time dependency, the method including (i) forming a film by a chemical amplification resist composition containing (A) a fullerene derivative having an acid-decomposable group, (B) a compound generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent, (ii) exposing the film, and (iii) developing the exposed film by using an organic solvent-containing developer.

Abstract: The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.

Abstract: The invention relates to an antireflective coating composition comprising a crosslinker and a crosslinkable polymer capable of being crosslinked by the crosslinker, where the crosslinkable polymer comprises a unit represented by structure (1): -A-B-C-??(1) where A is a fused aromatic ring, B has a structure (2), and C is a hydroxybiphenyl of structure (3) where R1 is C1-C4alkyl and R2 is C1-C4alkyl. The invention further relates to a process for forming an image using the composition.

Abstract: A cyclic compound represented by formula (1): wherein L, R1, R?, and m are as defined in the specification. The cyclic compound of formula (1) is highly soluble to a safety solvent, highly sensitive, and capable of forming resist patterns with good profile. Therefore, the cyclic compound is useful as a component of a radiation-sensitive composition.

Abstract: A cyclic compound represented by formula (1): wherein L, R1, R?, and m are as defined in the specification. The cyclic compound of formula (1) is highly soluble to a safety solvent, highly sensitive, and capable of forming resist patterns with good profile. Therefore, the cyclic compound is useful as a component of a radiation-sensitive composition.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin that contains a repeating unit represented by formula (I) as defined in the specification, a repeating unit represented by formula (II) as defined in the specification and a repeating unit represented by formula (III-a) or (III-b) as defined in the specification; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) a solvent, wherein the solvent (C) contains ethyl lactate, and a film and a pattern forming method using the composition are provided.

Abstract: An actinic-ray-sensitive or radiation-sensitive resin composition which is capable of improving line edge roughness (LER) and inhibiting pattern collapse, a resist film and a pattern forming method each using the same, a method for preparing an electronic device, and an electronic device are provided. The actinic-ray-sensitive or radiation-sensitive resin composition contains: (A) a resin having repeating units having a structure represented by any one of the following general formulae (I-1) to (I-3), and repeating units containing at least one selected from the group consisting of a lactone structure, a sultone structure, and a cyano group; and (B) a compound that generates an acid by irradiation with actinic rays or radiations.

Abstract: A positive-type photosensitive resin composition comprising component (A): an alkali-soluble resin having a functional group which undergoes heat crosslinking reaction with a compound of component (B), a functional group for film curing which undergoes thermoset reaction with a compound of component (C), and a number average molecular weight of 2,000 to 30,000; component (B): a compound having two or more vinyl ether groups per molecule; component (C): a compound having two or more blocked isocyanate groups per molecule; component (D): a photoacid generator; and component (E): a solvent. A production process of the positive-type photosensitive resin composition comprising mixing the above-mentioned components and maintaining the mixture at a temperature higher than room temperature. A cured film manufactured by using the positive-type photosensitive resin composition.

Abstract: The present application relates to a novel compound, a photosensitive composition comprising the same and a photosensitive material.

Abstract: A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition exhibits a high resolution and forms a negative resist pattern of a profile with minimized LER and undercut.

Abstract: A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the chemical amplification resist composition contains (A) a resin containing a repeating unit having two or more hydroxyl groups, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent and (D) a solvent; a pattern formed by the pattern forming method; a chemical amplification resist composition used in the pattern forming method; and a resist film formed using the chemical amplification resist composition.

Abstract: The present invention relates to a negative photoresist composition and a patterning method for device in which a photoresist pattern having a high sensitivity with a good reverse taper profile can be formed not only to realize an effective patterning of various thin films but also to facilitate removal of the photoresist pattern after the patterning. The photoresist composition comprises an alkali-soluble binder resin; a halogen-containing first photo-acid generator; a triazine-based second photo-acid generator; a cross-linking agent having an alkoxy structure; and a solvent.

Abstract: A cyclic compound represented by formula (1): wherein L, R1, R?, and m are as defined in the specification. The cyclic compound of formula (1) is highly soluble to a safety solvent, highly sensitive, and capable of forming resist patterns with good profile. Therefore, the cyclic compound is useful as a component of a radiation-sensitive composition.

Abstract: There is provided a resist composition suitable for forming a microlens which is excellent in transparency, heat resistance, and sensitivity characteristics, excellent in solubility in a developer, and as the result thereof has high resolution. A positive resist composition comprising; a component (A): an alkali-soluble polymer; a component (B): a compound having an organic group to be photolyzed to generate an alkali-soluble group; a component (C): a crosslinkable compound of Formula (1): [where R1, R2, and, R3 are independently a C1-6 alkylene group or oxyalkylene group which are optionally branched; and E1, E2, and E3 are independently a group containing a structure of Formula (2) or Formula (3): (where R4 is a hydrogen atom or a methyl group)]; and a component (D): a solvent.

Abstract: A low surface energy photoresist composition is described that comprises a silicone-polyether block copolymer, wherein the silicone block comprises 35 wt. % or more of said copolymer. When compounded with a photoresist composition, the composition enables the release of a phototool from the photoresist layer.

Abstract: A resin composition which, in forming a fine pattern by a heat treatment of a resist pattern formed by using a photoresist, can be applied onto the resist pattern, can cause the resist pattern to smoothly shrink by heat treatment, and can be easily washed away by a treatment with an alkaline aqueous solution, and a method for efficiently forming a fine resist pattern using the resin composition are provided. The resin composition comprises a resin containing a hydroxyl group, a crosslinking component, and an alcohol solvent containing water in an amount of 10 wt % or less for the total solvent, wherein the alcohol in the alcohol solvent is a monovalent alcohol having 1 to 8 carbon atoms.

Abstract: There is provided to a pattern reversal film forming composition that is capable of forming a pattern reversal film which is not mixed with a resist pattern formed on a substrate, and that is only capable of forming a pattern reversal film advantageously covering the pattern, but also irrespective of whether the resist pattern is coarse or fine, capable of forming a planar film excellent in temporal stability on the pattern. A pattern reversal film forming composition including a polysiloxane, an additive and an organic solvent, characterized in that the polysiloxane is a product of a hydrolysis and/or condensation reaction of a silane compound containing a tetraalkoxysilane of Si(OR1)4 and an alkoxysilane of XnSi(OR2)4-n, and the tetraalkoxysilane is used in a ratio of 1 to 50% by mole based on the number of moles of the whole silane compound; and a pattern reversal film and a method of forming a reversed pattern in which the composition is used.

Abstract: A resist lower layer film-forming composition includes (A) a polymer that includes a cyclic carbonate structure. The polymer (A) includes a structural unit (I) shown by the following formula (1).

Abstract: A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

Abstract: The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

Abstract: To provide a negative photosensitive composition applicable to preparation of partition walls which can maintain excellent ink repellency even after ink affinity-imparting treatment, and partition walls for an optical device using such a composition. A negative photosensitive composition comprising the following ink repellent (A) in an amount of from 0.

Abstract: There is disclosed a negative resist composition comprising at least (A) a base resin that is alkaline-soluble and is made alkaline-insoluble by action of an acid, and/or a combination of a base resin that is alkaline-soluble and is made alkaline-insoluble by reaction with a crosslinker by action of an acid, with a crosslinker, (B) an acid generator, and (C) a compound containing a nitrogen as a basic component, and forming a resist film having the film thickness X (nm) of 50 to 100 nm, wherein, in the case that the resist film is formed from the negative resist composition under the film-forming conditions for the pattern formation, a dissolution rate of the resist film into the alkaline developer used in the development treatment for the pattern formation is 0.0333X?1.0 (nm/second) or more and 0.0667X?1.6 (nm/second) or less.

Abstract: An etch resistant thermally curable Underlayer composition for use in a multiplayer lithographic process for producing a photolithographic bilayer coated substrate, the composition being a composition of: (a) a polymer comprising repeating units of Structure I, II and III (b) at least one crosslinking agent; (c) at least one thermal acid generator; and (d) at least one solvent.

Abstract: Cyanurate compositions are provided that are particularly useful as a reagent to form a resin component of a coating composition underlying an overcoated photoresist. Preferred isocyanurates compound comprise substitution of multiple cyanurate nitrogen ring atoms by at least two distinct carboxy and/or carboxy ester groups.

Abstract: A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble polymer, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component, the polymer (A) turning alkali insoluble under the catalysis of acid. A basic polymer having a secondary or tertiary amine structure on a side chain serves as components (A) and (C). Processing the negative resist composition by EB or EUV lithography process may form a fine size resist pattern with advantages including uniform diffusion of base, improved LER, controlled deactivation of acid at the substrate interface, and a reduced degree of undercut.

Abstract: There is disclosed a negative resist composition wherein a base resin contains at least repeating units represented by the following general formula (1) and general formula (2) and has a weight average molecular weight of 1,000 to 10,000, and the compound containing a nitrogen atom as a basic component contains one or more kinds of amine compounds having a carboxyl group and not having a hydrogen atom covalently bonded to a base-center nitrogen atom. There can be a negative resist composition in which a bridge hardly occurs, substrate dependence is low and a pattern with a high sensitivity and a high resolution can be formed, and a patterning process using the same.

Abstract: The invention relates to an underlayer coating composition comprising a polymer, where the polymer comprises at least one hydroxyaromatic unit in the backbone of the polymer phenol which has a pendant group comprising a fluoro or iodo moiety, and at least one unit comprising an aminoplast. The invention further relates to a process for forming an image using the composition, especially for EUV.

Abstract: Developable bottom antireflective coating compositions are provided.

Abstract: An aromatic ring-containing polymer, a polymer mixture, an antireflective hardmask composition, and a method for patterning a material on a substrate, the aromatic ring-containing polymer including at least one aromatic ring-containing polymer represented by Formulae 1, 2, or 3.

Abstract: A method for reducing a photoresist critical dimension, the method comprising depositing a photoresist film on a substrate, wherein the photoresist film includes a thermal base generator; patterning the photoresist film to form a first patterned film possessing a first critical dimension; depositing a crosslinkable film over the first patterned film; heat-activating the first patterned film, either before or after depositing the crosslinkable film, to release a base in the first patterned film and cause crosslinking in the crosslinkable film in contact with the first patterned film; and developing the crosslinkable film to remove non-crosslinked soluble portions therein to form a second patterned film possessing a reduced critical dimension compared to the first critical dimension.

Abstract: Acid-sensitive, developer-soluble bottom anti-reflective coating compositions are provided, along with methods of using such compositions and microelectronic structures formed thereof. The compositions preferably comprise a crosslinkable polymer dissolved or dispersed in a solvent system. The polymer preferably comprises recurring monomeric units having adamantyl groups. The compositions also preferably comprise a crosslinker, such as a vinyl ether crosslinking agent, dispersed or dissolved in the solvent system with the polymer. In some embodiments, the composition can also comprise a photoacid generator (PAG) and/or a quencher. The bottom anti-reflective coating compositions are thermally crosslinkable, but can be decrosslinked in the presence of an acid to be rendered developer soluble.

Abstract: A resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film. The resist lower-layer composition is insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid by heating at a temperature of 100° C. or higher.

Abstract: A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.

Abstract: An antireflective hardmask composition layer including a polymer having Si—O and non-silicon inorganic units in its backbone. The polymer includes chromophore and transparent moieties and a crosslinking component. The antireflective hardmask composition layer is employed in a method of forming a patterned material on a substrate.

Abstract: Bilayer systems include a bottom layer formed of polydimethylglutarimide, an acid labile dissolution inhibitor and a photoacid generator. The bilayer system can be exposed and developed in a single exposure and development process.

Abstract: To provide a photosensitive resin composition in which a hardened film obtained from the photosensitive resin composition has properties comparable to those of a film hardened at a high temperature, a method for manufacturing a patterned hardened film using the photosensitive resin composition, and an electronic part. The photosensitive resin composition includes (a) a polybenzoxazole precursor having a repeating unit represented by a general formula (I): wherein U and V represent a divalent organic group, and at least one of U and V is a group containing an aliphatic chain structure having 1 to 30 carbon atoms; (b) a photosensitizer; (c) a solvent; and (d) a crosslinking agent capable of causing crosslinking or polymerization by heating.

Abstract: A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

Abstract: Disclosed is a method for manufacturing fine patterns of semiconductor devices using a double exposure patterning process for manufacturing the second photoresist patterns by simply exposing without an exposure mask. The method comprises the steps of: forming a first photoresist pattern on a semiconductor substrate on which a layer to be etched is formed; coating a composition for a mirror interlayer on the first photoresist pattern to form a mirror interlayer; forming a photoresist layer on the resultant; and forming a second photoresist pattern which is made by a scattered reflection of the mirror-interlayer and positioned between the first photoresist patterns, by exposing the photoresist layer to a light having energy which is lower than a threshold energy (Eth) of the photoresist layer without an exposure mask, and then developing the same.

Abstract: There is provided a resist underlayer film forming composition used in a lithography process for producing semiconductor devices. A method of producing a semiconductor device comprising: forming a coating film by applying a resist underlayer film forming composition containing a polymer, a crosslinker and a photoacid generator on a semiconductor substrate; forming an underlayer film by irradiating light to the coating film; and forming a photoresist by applying a photoresist composition on the underlayer film and heating the resultant layer. The polymer polymer is a polymer having a benzene ring or a hetero ring in a main chain or a side chain bonded to the main chain, and the content rate of a benzene ring in the polymer is 30 to 70% by mass. The polymer may be a polymer containing a lactone structure.

Abstract: A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photodegradable base material; and exposing at least a portion of the second material layer.

Abstract: The object of the present invention is to provide a process for forming a resist pattern that is capable to utilize excimer laser beam, the thickening level of the resist pattern is controllable uniformly, constantly and precisely, without being affected substantially by environmental changes such as temperatures and humidity, and storage period, and space pattern of resist may be formed with a fineness exceeding exposure limits or resolution limits of available irradiation sources. The process for producing a semiconductor device is characterized in that forming a resist pattern on a surface of workpiece, coating a resist pattern thickening material on the resist pattern, thickening the resist pattern to form a thickened resist pattern, and patterning the surface of workpiece by etching using the thickened resist pattern as a mask, wherein the resist pattern thickening material comprises a resin, and exhibits a pH value of above 7 and not over 14 at coating or after coating on the resist pattern.

Abstract: A polymer compound is provided which is excellent in heat resistance and insulating property, and a photosensitive resin composition is provided which includes the polymer compound, and may form a cured pattern or a cured film excellent in pattern forming property, resolution, heat resistance and insulating property. Also, a method for forming a cured pattern excellent in pattern forming property, resolution, heat resistance and insulating property using the photosensitive resin composition, and an electronic device having high reliance for a semiconductor device or for a display device are provided. The photosensitive resin composition includes a polymer compound obtained by reacting a monomer represented by Formula (1) and a monomer represented by Formula (2), and a photosensitizing agent.

Abstract: The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.