Abstract: An assembly of heating furnace and semiconductor wafer-holding jig. This assembly includes a furnace body made of refractory or heat insulting material; a heater disposed around the inner side surface of the furnace body; a reaction chamber which forms a uniform heating zone; and a wafer-holding jig. The wafer-holding jig is capable of holding the wafer and advancing and retracting the wafer in the uniform heating region along the longitudinal direction of the furnace body. The front surface of the semiconductor wafer to be heat-treated is substantially in parallel with the surface of the heater. The assembly of the invention can be used in rapid thermal processing and the footprint of the heating furnace can be reduced.

Abstract: A fixture (30) adapted to permit the heated exchange of a liner (14) from an operating vertical furnace (10). The fixture is adapted to secure to the base of the liner (14) to both unlock and lower the heated liner, such as a silicon carbide liner, at an controlled rate. The fixture is also adapted to elevate a new liner into the operating vertical furnace at a controlled rate to control the rate of heating of the liner as it is inserted into the operating vertical furnace. The fixture includes an inner ring (34), a low-friction Teflon® ring (36), and an outer ring (38) permitting the rotation of the inner ring within the outer ring. Advantageously, the low friction ring comprises a flanged portion and a vertical portion allowing rotation of the inner ring within the outer ring even when elevated at extreme temperatures exceeding 500° C.

Abstract: A support sleeve for supporting a high temperature process tube comprises one or more circumferential channels, each channel connected to either a feed for gas or a vacuum exhaust. One circumferential channel opens to the top surface of the sleeve, on which the process tube is supported to provide a gas/vacuum seal between the process tube and support sleeve. Another circumferential channel is connected to a gas feed and provided with gas injection holes, evenly distributed along the support sleeve perimeter to provide a cylindrically symmetrical injection of process gas into the process tube. Another circumferential channel is connected to an exhaust for gas and provided with gas exhaust holes, evenly distributed along the circumference of the support sleeve, to provide a cylindrically symmetric exhaust of process gases from the process tube.

Abstract: A vertical type chemical vapor deposition apparatus includes a process chamber having a cylindrical inner tube and a cap shaped outer tube surrounding and apart from the inner tube. A manifold is coupled with lower portions of the inner and outer tubes, and has a lower portion tapered at an inclination angle. A heater is provided at an outer side of the outer tube for heating the process chamber. A boat is movable into and out of the process chamber through the manifold, as driven by an elevator. The boat is vertically loaded with wafers. A cap is fixed to the elevator at a lower portion of the boat, and has a portion contactable with the manifold that is tapered at a same inclination angle as the lower portion of the manifold. An O-ring is inserted into the portion of the cap contactable with the manifold.

Abstract: A fixture (30) adapted to permit the heated exchange of a liner (14) from an operating vertical furnace (10). The fixture is adapted to secure to the base of the liner (14) to both unlock and lower the heated liner, such as a silicon carbide liner, at an controlled rate. The fixture is also adapted to elevate a new liner into the operating vertical furnace at a controlled rate to control the rate of heating of the liner as it is inserted into the operating vertical furnace. The fixture includes an inner ring (34), a low-friction Teflon® ring (36), and an outer ring (38) permitting the rotation of the inner ring within the outer ring. Advantageously, the low friction ring comprises a flanged portion and a vertical portion allowing rotation of the inner ring within the outer ring even when elevated at extreme temperatures exceeding 500° C.

Abstract: An apparatus for fabricating a semiconductor device includes a reaction or process tube provided with at least one reinforcement member. The reinforcement member is attached to a body portion of the reaction tube and extends in a longitudinal direction of the reaction tube. A heater surrounds the reaction tube and a substrate loaded in the reaction tube is heat-treated by the heater.

Abstract: A novel batch-type kiln and a method of use thereof are provided. The kiln comprises a kiln body and a heating chamber disposed within the kiln body, which has a heater disposed therein. A table is disposed at the bottom of the heating chamber, the table having a peripheral portion and an upper surface for supporting an object to be treated. The peripheral portion of the table and a portion of the kiln body define a gap therebetween. This gap forms a gas-introducing path for introducing a gas into the heating chamber. The batch-type kiln is capable of preventing accumulation of a binder component in the gap between the table and the kiln wall.

Abstract: A support sleeve for supporting a high temperature process tube comprises one or more circumferential channels, each channel connected to either a feed for gas or a vacuum exhaust. One circumferential channel opens to the top surface of the sleeve, on which the process tube is supported to provide a gas/vacuum seal between the process tube and support sleeve. Another circumferential channel is connected to a gas feed and provided with gas injection holes, evenly distributed along the support sleeve perimeter to provide a cylindrically symmetrical injection of process gas into the process tube. Another circumferential channel is connected to an exhaust for gas and provided with gas exhaust holes, evenly distributed along the circumference of the support sleeve, to provide a cylindrically symmetric exhaust of process gases from the process tube.

Abstract: A pedestal for use in a high temperature vertical furnace for the processing of semiconductor wafers provides a closure and heat insulation for the lower end of the furnace and is a wafer boat support. The pedestal, comprising quartz-enveloped insulation material, supports a wafer boat at a boat support level and is provided with an upper section disposed above the boat support level. The upper section comprises enveloped insulating material. The envelope of the upper section is also formed of quartz and the insulating material in the upper section has a lower thermal conductance than the insulating material in a lower quartz enveloped section.

Abstract: A heat treatment apparatus for performing a heat treatment on one or more substrates includes a substrate support device holding the substrates, the substrate support device having a main body and a contact portion being in contact with a substrate. A surface of the main body is made of a material different from that of the contact portion, and at least a surface of the contact portion is made of either glassy carbon or graphite.

Abstract: A plurality of side posts (12) and a plurality of rear posts (13) are disposed on the opposite sides S and on the rear side R of the workpiece (W), respectively. The side posts (12) and the rear posts (13) are provided with grooves (14, 15) having workpiece support surfaces (14a, 15a) and formed at predetermined vertical intervals, respectively. Each support surface of each side posts (12) is formed in a wide width and extends along the circumference of the workpiece from the center axis C of the workpiece toward the front side F on the front side of the workpiece (W). Each of the support surfaces (14a, 15a) of the posts (12, 13) inclines down toward the center axis C of the workpiece.

Abstract: A gas preheater for a CVI furnace designed for the densification of annular porous substrates arranged in a plurality of vertical annular stacks of substrates, comprising: a sleeve made of heat conductive material resting upon the bottom wall of a susceptor and delimiting a gas preheating chamber, with a gas inlet opening in the gas preheating chamber; a heat exchange assembly located in the gas preheating chamber; a gas distribution plate resting upon the sleeve, covering the gas preheating chamber and provided with a plurality of passages for preheated gas; a load supporting plate for supporting stacks of annular substrates and provided with a plurality of passages in communication with respective passages of the gas distribution plate and registration with internal volumes of respective stacks of annular substrates; and nozzles inserted in passages communicating the gas preheating zone with the internal volumes of respective stacks of annular substrates for adjusting the flows of preheated gas respectively

Abstract: In an elevating mechanism 14 where an elevating mechanism 17 carried so as to rise and fall along a fixed surface 16 is moved up and down through a suspension member 18, a braking mechanism 18 is born by the elevating mechanism 17 so as to pivot vertically. A tensile spring 32 is provided on the braking mechanism 31, for pivotally urging it to the direction close to the fixed surface 16, while the suspension member 18 is connected to the braking mechanism 31, for pulling the braking mechanism 31 in the direction apart from the fixed surface 16 due to the weight of the elevating mechanism 17, in opposition to the tensile spring 32. When the suspension member 18 is cut off, then the braking mechanism 31 comes into contact with and digs into the fixed surface 16 by action of the tensile spring 32, so that the elevating mechanism 17 can be stopped from falling.

Abstract: An apparatus treating substrates in a high-temperature and high-pressure atmosphere, the substrates being treated in a batch that includes one lot of the substrates treated as a unit. A supporting jig is provided with means to support a plurality of the substrates in a shelved arrangement, the supporting jig and substrates being configured to enter and exit from a treating chamber within a pressure vessel as a single unit. The supporting jig is surrounded by a casing. In order to cope with the difficulty of oxidization of the substrates, an oxygen getter is disposed in either the supporting jig or in the casing. The pressure vessel includes an opening whereby a reducing gas can be introduced into the treating chamber. Further, the pressure vessel and a stocking portion of the substrates are installed within a housing such that contamination is further reduced and control is made easier.

Abstract: A system (10) is disclosed for cleaning a vertical furnace (12) pedestal (34) and cap (36) including at least one inlet conduit (40) in fluid communication with a pressurized cleaning medium source (46). The system also includes at least one exhaust conduit (42) in fluid communication with a negative pressure source (48). A boat assembly (30) may be positioned such that the at least one conduit (40) is operable to direct cleaning medium at the boat assembly (30) to dislodge contaminate particles associated with the boat assembly. The exhaust outlet (42) then evacuates the cleaning medium and any dislodged contaminate particles. The system may operate automatically within a closed processing environment and after each process cycle.

Abstract: A vertical furnace equipped with self-positioning gas injectors for processing wafers and a method for mounting self-positioning gas injectors in the furnace are disclosed. The vertical furnace is constructed by a cylindrical-shaped tube fabricated of quartz having a cavity therein for positioning of a wafer boat; a mounting ring positioning inside the cavity and for mounting the gas injectors thereon; and a plurality of gas injectors each formed in a “L” configuration with a stopper formed on a bottom of the horizontal portions of the gas injectors such that each of the stoppers is formed at a different location and fits only one slot opening formed on the mounting ring.

Abstract: Embodiments of the invention generally provide an apparatus and a method for providing a uniform thermal profile to a plurality of substrates during heat processing. In one embodiment, a cassette containing one or more heated substrate supports is moveably disposed within a heating chamber having an about uniform thermal profile therein to more uniformly heat the substrates.

Abstract: A method and apparatus for heating a loadlock to inhibit the formation of contaminants within the loadlock. At least one heater is attached to the walls of the loadlock to boil contaminants from the surfaces within the loadlock. These desorbed contaminants are exhausted from the loadlock by a vacuum pump. Alternatively, a purge gas can be supplied to the loadlock while the loadlock is being heated. The flow of purge gas flushes the desorbed contaminants from the loadlock.

Abstract: A semiconductor device fabrication apparatus is provided for increasing the deposition rate of a film. The apparatus includes a process tube. Process gas injection portions in a slit configuration and waste gas exhaust portions formed as holes are integrated into the interior of the body of the process tube.

Abstract: A device used to transfer and support articles during a high temperature heat treatment. The device is used to move articles into a heat treat furnace, hold the articles at an elevated temperature in a controlled atmosphere during the high temperature treatment and remove the articles from the furnace at the conclusion of the high temperature treatment, with no need to transfer the articles from the device. The device is comprised of a plurality of high temperature rollers, each roller including a roller bearing. A nonmetallic support surface capable of supporting the load of components undergoing the heat treatment is attached to the rollers. The device is designed to be nonreactive with either the furnace atmosphere or with the parts loaded onto it. The device also includes means to accommodate a temperature monitoring device such as a thermocouple to accurately monitor the temperature of the device during the thermal cycle.

Abstract: A vertical heat-processing apparatus includes a surrounding member, which surrounds a process chamber and a heater. The surrounding member forms a heating space around the process chamber. The heating space has zones juxtaposed in a vertical direction. Temperature sensors are arranged to detect temperatures respectively representing the zones. Supply pipes are arranged to respectively supply a cooling gas to the zones. The supply pipes are respectively provided with valves controlled by a controller. The controller adjusts opening degrees of the valves such that a flow velocity of the cooling gas in a first zone having a lower cooling rate becomes higher than a flow velocity of the cooling gas in a second zone having a higher cooling rate used as a reference.

Abstract: A second vertical heat treating apparatus is temperature-calibrated based on a heat treatment result obtained by a first vertical heat treating apparatus for reference. First, temperature measurement wafers is heated in the first apparatus to obtain set values of temperature controllers for a target value of temperature. Then, wafers are subjected to an oxidizing process in the first apparatus by using these set values to form an oxide film. The thickness of the oxide film is measured and recorded as a reference film thickness. Then, wafers are subjected to an oxidizing process in a second apparatus at temperatures near the target value to form an oxide film. The thickness of the oxide film is measured, and difference in thickness between the oxide film formed in the second apparatus and the reference film thickness is obtained.

Abstract: An inner vessel 16 capable of hermetically surrounding a portion for disposing works W is disposed to the inside of a pressure vessel 4, the inner vessel 16 is provided with a gas introducing portion 18 at a lower position thereof free from the effect a high temperature atmosphere formed by heaters 11 and 12, a filter 20 is disposed to the gas introducing portion 18 and a check valve 19 is disposed to the inner vessel 16 for allowing a gas to flow unidirectionally from the inside to the outside thereof.

Abstract: When an oxidation process for semiconductor wafers is carried out by a batch type furnace, the uniformity of the thickness of a film is intended to be improved so as to be capable of carrying out a low temperature process. In a system for feeding a mixed gas of hydrogen gas and water vapor into a reaction vessel to carry out a so-called wet oxidation, a ventilation resistance material is provided in an outside passage of a double-pipe passage for heating gas in an external combustion system, and a mixed gas of hydrogen gas and hydrogen chloride gas is passed through the ventilation resistance material to be heated to a process temperature or higher by means of the heater of the combustion system to previously produce a very small amount of water vapor to carry out a dry oxidation. When dinitrogen oxide gas is used for producing a nitrogen containing silicon oxide film, dinitrogen oxide gas is passed through the outside passage to be previously activated.

Abstract: A method and apparatus for heating a loadlock to inhibit the formation of contaminants within the loadlock. At least one heater is attached to the walls of the loadlock to boil contaminants from the surfaces within the loadlock. These desorbed contaminants are exhausted from the loadlock by a vacuum pump. Alternatively, a purge gas can be supplied to the loadlock while the loadlock is being heated. The flow of purge gas flushes the desorbed contaminants from the loadlock.

Abstract: When the processed body holding member is moved upward or downward, the pressure in the reaction pipe and the shift and mount chamber is reduced down to several to several tens Torr, to reduce wind pressure applied to the processed body and thereby to suppress pressure fluctuations in the reaction pipe. Further, when the processed body holding member is moved upward or downward, the processing gas is passed in the same direction as the movement direction of the processed body holding member at a speed higher than the movement speed of the processed body holding member, to prevent the processing gas from being opposed to the processed body, so that the resistance received by the processed body is reduced and thereby the pressure fluctuations can be suppressed in the reaction pipe.

Abstract: A thermal process chamber (10) is provided for processing substrates contained therein, comprising (i) a main processing portion (12) in which a substrate to be processed may be positioned, the processing portion defining a first area (44) and providing an opening (21) through which a substrate to be processed may be inserted into and removed from the first area (44) of the process chamber; (ii) an upper portion (11), positioned above the main processing portion, defining a second area (39) and providing a closed end for the process chamber; (iii) a gas injector (18) for providing gas to the second area (39); and (iv) a gas distribution plate (20) separating the first area (44) from the second area (39). The gas distribution plate provides a plurality of passageways (40, 42) for permitting gas provided to the second area to pass into the first area. The gas distribution plate (20) is formed integrally with the main processing portion (12) and with the upper portion (11).

Abstract: A thermal process chamber (10) is provided for processing substrates contained therein, comprising (i) a main processing portion (12) in which a substrate to be processed may be positioned, the processing portion defining a first area (44) and providing an opening (21) through which a substrate to be processed may be inserted into and removed from the first area (44) of the process chamber; (ii) an upper portion (11), positioned above the main processing portion, defining a second area (39) and providing a closed end for the process chamber; (iii) a gas injector (18) for providing gas to the second area (39); and (iv) a gas distribution plate (20) separating the first area (44) from the second area (39). The gas distribution plate provides a plurality of passageways (40, 42) for permitting gas provided to the second area to pass into the first area. The gas distribution plate (20) is formed integrally with the main processing portion (12) and with the upper portion (11).

Abstract: A processing unit for a substrate has a vertical thermal processing furnace 4 having a bottom and an opening 4a provided at the bottom. A boat 3 holding substrates W in vertical multistairs can be placed on a first lid 17, and the first lid 17 can open and close the opening 4a of the vertical thermal processing furnace 4 with the boat 3 placed thereon. The processing unit also has a boat-placing portion 19 on which the boat 3 and another boat 3 can be placed and a boat conveying mechanism 21 for conveying the two boats 3 alternatively between the boat-placing portion 19 and the first lid 17. A second lid 18 hermetically closes the opening 4a of the vertical thermal processing furnace 4 when the first lid 17 opens the opening 4a but no boat 3 passes through the opening 4a.

Abstract: In a vertical thermal treatment apparatus wherein a plurality of semiconductor wafers are held in multiple layers within a wafer boat, the wafer boat is mounted onto a turntable at the upper end of a rotational shaft that penetrates from a bottom portion through a shaft hole into a vertical reaction vessel, and the wafers are subjected to a thermal treatment while the wafer boat is rotated; a seal is formed between the rotational shaft and the penetration portion, to restrain the intrusion of gases and moisture into the seal portions from the interior of the reaction vessel and to eliminate adverse effects on the seal materials. The space within a gap between a shaft hole 33 and a rotational shaft 4 communicates with a space between a fixing member 34 and an outer shell member 44, and a magnetic seal portion 7 is provided between this fixing member 34 and the outer shell member 44.

Abstract: A firing apparatus for a green ceramic compact including: a furnace; and a firing tube provided in the furnace with a given space from the side wall of the furnace. The bottom end of the firing tube can be placed on a first stage loaded with a casing containing the green ceramic compact so as to substantially close the casing, the firing tube having a space for firing the green ceramic compact therein and being formed from a highly heat-conductive material.

Abstract: A refuse incinerating oven includes a refuse loading car, and a furnace body with lower and upper combustion chambers. The car is conveyed through the furnace body such that refuse loaded on the car can be ignited in the lower combustion chamber. The combustion exhaust generated in the lower combustion chamber flows into and is heated in the upper combustion chamber. A spraying tank is communicated with the upper combustion chamber for receiving the combustion exhaust. Water mist is sprayed to the combustion exhaust in the spraying tank so as to generate aerated water. The aerated water and the combustion exhaust flowing from the spraying tank are cooled as they flow into a reservoir. The aerated water is pumped from the reservoir to an upper end of a waterfall tank so as to generate a downwardly cascading water stream inside the waterfall tank. An exhaust port unit is connected to the upper end of the waterfall tank for sucking and releasing the combustion exhaust.

Abstract: A substrate heater having a chamber, a heating element located in the chamber, and an elevator having a substrate holder. The holder can hold a plurality of planar substrates in a general spaced stacked configuration. The holder can be moved to allow substrates to be inserted and removed from various locations on the holder. In one embodiment the substrates are located very close to each other to accelerate the rate of heat transfer to newly inserted substrates. In another embodiment, the holder has an individual horizontal heater on the elevator for each substrate.

Abstract: A processing chamber tube used in a semiconductor furnace is guided during its removal from the furnace by a plurality of circumferentially spaced guides. The guides are mounted for adjustable radial movement on a ring-shaped plate. The plate is secured on the base of the furnace. The guides are preferably in the form of rollers which engage and guide the tube during its removal from the furnace.

Abstract: A novel batch-type kiln and a method of use thereof are provided. The kiln comprises a kiln body and a heating chamber disposed within the kiln body, which has a heater disposed therein. A table is disposed at the bottom of the heating chamber, the table having a peripheral portion and an upper surface for supporting an object to be treated. The peripheral portion of the table and a portion of the kiln body define a gap therebetween. This gap forms a gas-introducing path for introducing a gas into the heating chamber. The batch-type kiln is capable of preventing accumulation of a binder component in the gap between the table and the kiln wall.

Abstract: A vertically oriented thermal processor supports semiconductor wafers within a vertical process chamber within a process tube about which a furnace heater is supported. A base plate support assembly mates with a processing vessel such that the interior surface in proximate fluid adjoining relation with the processing chamber is formed from substantially-inert materials. Additionally, the base plate support assembly includes fluid cooling features that protect seals formed by devices passing through the base plate assembly into the processing chamber for delivery of processing gases and monitoring of thermal conditions therein. Additionally, cooling features are provided in a base plate in order to prevent components from becoming heat sinks or heat sources in relation to the processing chamber.

Abstract: The process tube of a vertical heat-treating apparatus for semiconductor wafers has a port at the bottom to be opened and closed by a lid. A sealing mechanism is arranged to seal the connecting portion between the flange of the port and the flange of the lid. The flanges are provided with annular mirror surfaces on the inner side, which face and contact each other to form an inner seal. The flanges are also provided with annular counter surfaces on the outer side, which face each other with a gap therebetween. A metal sheet member is arranged in the gap such that an outer seal is formed by the metal sheet member and the counter surfaces. The metal sheet member has sheets vacuum-stuck onto the counter surfaces, respectively. A buffer space is formed between the inner and outer seals, and is vacuum-exhausted by an exhaust unit.

Abstract: A substrate processing apparatus and method restrains outside air and gas-phase backward flow from entering the inside of a reaction chamber during a time period that the inside of the reaction chamber is opened to the outside through a substrate carrying-in/carrying-out opening. The substrate processing apparatus can comprise, for example, a vertical CVD apparatus having a gas supply system and a bypass line. The gas supply system supplies inert gas to a space between an outer tube and an inner tube of a reaction furnace during a boat loading period and a boat unloading period. The bypass line exhausts the atmosphere from the reaction chamber by a slow exhaust operation during the boat loading period and the boat unloading period.

Abstract: System for treating wafers. It is proposed to place a number of furnaces in one area and wafer racks filled with wafers are introduced into each of these furnaces. The wafer racks are located in trolleys which are filled from cassettes in a central loading/removal device. The central loading/removal device serves for all furnaces.

Abstract: A boat for semiconductor wafers includes first, second and third support rods arranged between and connected to top and bottom plates. The first, second and third support rods include a plurality of first racks, a plurality of second racks, and a plurality of third racks, respectively, such that the racks of each rods are vertically arrayed with gaps therebetween. The first, second and third racks serving to define a plurality of horizontal wafer supporting levels. Each wafer supporting level is defined by only combination of the first, second and third racks of the corresponding height. In each wafer supporting level, the first and second racks are arranged substantially in symmetry with respect to an axis passing through the center of a wafer transfer port, and the third rack is arranged deviant from the axis by a certain distance corresponding to 5% to 48% of the diameter of the wafer.

Abstract: A vapor control apparatus including an endless rim, a stagnation plate and a cover having an exhaust port. The endless rim has a first edge engaging the cover, a second edge opposite the first edge, an interior region and an exterior region defined by the rim and the cover, and a flow passage from the interior region to the exterior region adjacent the cover. The exhaust port is in fluid communication with the interior region and the second edge is seatable on a wafer support. A stagnation plate is disposed in the interior region, defining a stagnant region intermediate the stagnation plate and the surface, and defining at least one flow path in fluid communication with the stagnant region and the interior region.

Abstract: In summary, the vertical rapid cooling furnace of this invention for treating semiconductor wafers with self contained gas chilling and recycling comprises a hot wall reaction tube positioned within a cylindrical array of heating coils. Space between the hot wall reaction tube and said array of heating coils provides a cooling gas passageway therebetween. The cooling gas passageway has an inlet and an outlet, a chilled gas inlet communicating with the inlet of the cooling gas passageway and a heated gas outlet communicating with the outlet of the cooling gas passageway. The furnace includes a heat exchanger having a hot gas inlet and a chilled gas outlet, the hot gas inlet thereof communicating with said heated gas outlet, and the chilled gas outlet communicating with said cooling gas passageway inlet. With this system, heated gas from the cooling gas passageway can be chilled to remove heat therefrom and returned to the cooling gas passageway to remove heat from the furnace.

Abstract: A vertical heat treatment apparatus for semiconductor wafers (W) including a heat treating furnace (19) which is heated to 600.degree. C. or higher. In the heat treating furnace (19), the wafers (W) are subjected to batch treatment while they are placed on a boat (16). A preparatory vacuum chamber (102) is airtightly connected to a lower side of the heat treating furnace (19). Disposed in the preparatory vacuum chamber (102) are a horizontal transfer mechanism (201) and a vertical transfer mechanism (202) for transferring the boat (16). The two transfer mechanisms (201 and 202) are supported by support members (29a and 33a) mounted on a mechanical base (28). The preparatory vacuum chamber (102) and the support members (29a and 33a) are airtightly connected to each other by means of bellows.

Abstract: An epitaxial barrel reactor for depositing a material on a semiconductor wafer by a chemical vapor deposition process using a reactant gas. The barrel reactor includes a receptacle defining a reaction chamber sized to receive at least one semiconductor wafer. The receptacle has an inlet port for introducing reactant gas to the reaction chamber and an exhaust port for removing reactant gas from the reaction chamber. The reactor also includes an exhaust tube sealingly engageable with the exhaust port of the receptacle for transporting reactant gas to facility piping to remove the gas from the reaction chamber after the chemical vapor deposition process. In addition, the reactor includes an actuator spaced from the receptacle for moving the exhaust tube between an operating position in which the tube sealingly engages the exhaust port of the receptacle and a maintenance position in which the tube is spaced from the exhaust port to provide access to the receptacle.

Abstract: When the processed body holding member is moved upward or downward, the pressure in the reaction pipe and the shift and mount chamber is reduced down to several to several tens Torr, to reduce wind pressure applied to the processed body and thereby to suppress pressure fluctuations in the reaction pipe. Further, when the processed body holding member is moved upward or downward, the processing gas is passed in the same direction as the movement direction of the processed body holding member at a speed higher than the movement speed of the processed body holding member, to prevent the processing gas from being opposed to the processed body, so that the resistance received by the processed body is reduced and thereby the pressure fluctuations can be suppressed in the reaction pipe.

Abstract: A heat treatment boat houses a plurality of semiconductor wafers in a manner separated at intervals for heat-treating the wafers in a heat treatment furnace. The heat treatment boat includes a bottom plate, a first support rod erected on the outer peripheral edge of the bottom plate, a second support rod and a third support rod both erected on the bottom plate so as to make an central angle of 105.degree. to 120.degree. with the first support rod with respect to the center of the respective wafer supported by the rods, and a top plate provided opposed to the bottom plate for holding the rods. The stresses applied to the wafers housed in the heat treatment boat are distributed equivalently to three contacting points with the rods and become the minimum.

Abstract: A vertical semiconductor wafer processing furnace that includes a single housing having first and second vertical furnaces each having a heating chamber for heat treating a semiconductor wafer. The first and second vertical furnaces are asymmetrically disposed relative to each other to reduce the overall footprint of the processing furnace. Each vertical furnace includes a wafer support assembly that includes support structure, such as a wafer boat, boat elevator, motor and guide rod, for axially mounting a selected number of semiconductor wafers. A translation element selectively moves one of the support elements along the vertical axis into and out of the process tube, and a wafer transfer element selectively transfers semiconductor wafers to or from one of the support elements. The furnace further includes a heating sleeve or envelope that is adapted to control the ambient fluid environment surrounding the support structure and which is independently movable relative to support structure.

Abstract: The vertical heat treatment apparatus for semiconductor wafers (W) includes a heat treatment furnace (19). In the heat treatment furnace (19), the wafers (W) are subjected to a batch treatment in a state mounted on a boat (16). To the lower side of the heat treatment furnace (19), a preparatory vacuum chamber (102) is airtightly connected through a manifold (33). The manifold (33) has first and second parts (33a and 33b) separably coupled to each other, which are connected to the heat treatment furnace (19) and the preparatory vacuum chamber (102), respectively. The second part (33b) defines a valve seat on which a lid (22) is seated to cut off the communication between the heat treatment furnace (19) and the preparatory vacuum chamber (102).

Abstract: A vertically oriented thermal processor for processing batches of semiconductor wafers held within a processing chamber. The processing chamber is contained within a processing vessel. A furnace liner surrounds the processing vessel in spaced relationship. A first flow of cooling fluid is supplied upwardly between the processing vessel and furnace liner. The incoming first flow also serves to cool the base plate assembly which is constructed to shield the processing chamber from off-gassing. A second flow path of cooling fluid is supplied downwardly between the furnace liner and an inner wall of the furnace heater in countercurrent relationship to the first flow. An outflow baffle and outflow cooler are also advantageously included to isolate the processing chamber and cool the exhausting gases. A preferred power supply system is also described.

Abstract: A manufacturing method and apparatus is provided for making building and other types of brick. The apparatus requires a minimum of excess (or surge) production, utilizes automated equipment which is highly dependable and which is easily operated and controlled. The apparatus comprises an automated low profile dryer and kiln in conjunction with an automated brick handling system including specially designed lighweight kiln cars.