Abstract: Described herein is a technique capable of adjusting a balance in film thickness between surfaces of a plurality of substrates stacked in a process chamber. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: a process chamber capable of accommodating a plurality of substrates; a gas supplier configured to supply a process gas to the plurality of the substrates in the process chamber; a gas exhauster configured to discharge the process gas from the process chamber; and a plurality of disks interposed between the plurality of the substrates, respectively, and in vicinity of back surfaces of the plurality of the substrates.

Abstract: The present invention provides a rear projection simulator system with a free-form fold mirror. The system includes a high definition projector and a curved screen. The free-form fold mirror is interposed between the projector and the screen. The free-form fold mirror includes one or more non-planar (e.g., curved) portions to eliminate or reduce loss of resolution of the projected image near the edges or boundaries of the image.

Abstract: Exemplary substrate support assemblies may include a platen characterized by a first surface configured to support a semiconductor substrate. The assemblies may include a first stem section coupled with a second surface of the platen opposite the first surface of the platen. The assemblies may include a second stem section coupled with the first stem section. The second stem section may include a housing and a rod holder disposed within the housing. The second stem section may include a connector seated within the rod holder at a first end of the connector. The second stem section may include a heater rod disposed within the first end of the connector and a heater extension rod coupled with the connector at a second end of the connector. The second stem section may include an RF rod and an RF strap coupling the RF rod with an RF extension rod.

Abstract: The present disclosure describes a wafer cooling/heating system that includes a load-lock and a thermo module. The load-lock uses a level stream design to improve temperature uniformity across one or more wafers during a cooling/heating process. The load-lock can include (i) a wafer holder configured to receive wafers at a front side of the load-lock; (ii) a gas diffuser with one or more nozzles along a back side of the load-lock, a side surface of the load-lock, or a combination thereof; and (iii) one or more exhaust lines. Further, the thermo module can be configured to control a temperature of a gas provided to the load-lock.

Abstract: A substrate processing apparatus includes: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism configured to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism configured to supply the gas into an upper region of the transfer chamber, where the substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism configured to supply the gas into a lower region of the transfer chamber, where the heat-insulating unit is provided such that the gas flows downward through the lower region, wherein the first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.

Abstract: Embodiments of the present disclosure disclose a plasma process apparatus with low particle contamination and a method of operating the same, wherein the plasma process apparatus comprises a chamber body and a liner, wherein a dielectric window is provided above the liner; the chamber body, the liner, and the dielectric window enclose a reaction space; a base for placing a wafer is provided at a bottom portion inside the reaction space; a vacuum pump device for pumping a gas out of the reaction space and maintaining a low pressure therein is provided below the base; a shutter for shuttering between an opening on a chamber body sidewall and an opening on a liner sidewall is provided inside the chamber body, for blocking contamination particles in the gas from flowing from a transfer module to the reaction space; a groove is provided at a lower portion of the liner, wherein a flowing space enclosed by a liner outer wall below the shutter and a chamber body inner wall is in communication with an inner space of t

Abstract: A coating apparatus includes a stage supporting a coating target, a coating part on the stage, the coating part being configured to apply a coating material onto the coating target, and a heating source opposite to and spaced apart from the stage, the heating source being configured to supply heat to the coating target after application of the coating material onto the coating target.

Abstract: A load lock device includes a vessel of which an internal pressure is variable between a pressure corresponding to a vacuum chamber and an atmospheric pressure; a purge gas supply source configured to supply a purge gas into the vessel; an exhaust device configured to evacuate an inside of the vessel; a pressure controller configured to adjust the internal pressure of the vessel to be the pressure corresponding to the vacuum chamber and the atmospheric pressure; a cooling member within the vessel configured to cool a substrate while the substrate is placed adjacent thereto; a first purge gas discharging member configured to discharge the purge gas to flow in parallel with the substrate while controlling a turbulent flow thereof; and a second purge gas discharging member formed of a porous material and configured to discharge the purge gas toward a bottom surface of the substrate from below the substrate.

Abstract: A method of sintering large refractory ceramic articles is disclosed. The method includes supporting a green refractory body on a plurality of support plates, the support plates in turn being supported by a plurality of support members having arcuate upper and lower surfaces. A setter material is disposed between the green refractory body to be sintered and the support plates. As the refractory body is sintered, the density of the article increases. Concurrently, the dimensions of the body decrease, which shrinkage, unless otherwise accommodated, may cause fracture of the body. The support plates and the structure of the support members, move to prevent the development of detrimental stresses in the refractory body as it sinters.

Abstract: The sizes required for maintenance are reduced and an occupying floor area is reduced. The substrate processing apparatus contains a load lock chamber 41 and a transfer chamber 24 respectively provided in order from the rear side within a case 11; and a processing chamber 53 provided above the load lock chamber 41 for processing wafers 1. An opening section 27A, and an opening and closing means 28A for opening and closing the opening section 27A are respectively provided in a location at the rear side of the transfer chamber 24 where the load lock chamber 41 is not arranged.

Abstract: The present invention relates to a process for making a container having an integral handle, comprising the steps of: a) providing a preform (6) in a mold cavity (1); b) stretch-blow molding the preform (6) to form an intermediate container (8) which comprises at least one, preferably two, convex bubble(s) (9); c) deforming the or each convex bubble (9) by means of an inwardly moving plug (5) to form one or more concave gripping region(s), while maintaining the pressure within the intermediate container (8) above 1 bar and while the temperature of the material in the gripping region of the intermediate container is maintained at a temperature between the glass transition temperature, Tg, and the melt temperature, Tm; d) releasing excess pressure within the container, preferably prior to withdrawing the plug (5) from within the container; and e) ejecting the finished container from the mold cavity (1, 3).

Abstract: A radially anisotropic toroidal magnetic core is fabricated by a method including providing apparatus having a first magnet for providing a radial magnetic field extending across a cavity from an axial spindle to a surrounding second magnetic element, placing a substrate in the cavity, the substrate having a hole fitting around the head of the spindle; and sputter-depositing a film of ferromagnetic material onto the substrate. An alternative fabrication uses a similar fixture to impose magnetic anisotropy by annealing a previously-formed toroidal core. A particular fixture adapted for deposition by electroplating or for applying anisotropy by annealing pre-formed cores applies magnetic fields symmetrically from above and below the cores. Also described are the radially anisotropic core produced by the method, and an inductor having a coil wound on the radially anisotropic core.

Abstract: A continuous heat treatment furnace is provided in which an atmosphere-control gas is introduced to a heating chamber having a heating zone, metal tubes are continuously charged along an axial direction from a furnace entrance, and the metal tube subjected to a heat treatment is taken out from a furnace. The continuous heat treatment furnace includes a front chamber which has a preheating zone on an entrance side of the heating chamber and seal curtains which are located on an entrance side and an exit side of the front chamber.

Abstract: A substrate heat treatment apparatus includes a heat-treating plate having a flat upper surface, support devices formed of a heat-resistant resin for contacting and supporting a substrate, a seal device disposed annularly for rendering gastight a space formed between the substrate and heat-treating plate, and exhaust bores for exhausting gas from the space. The support devices are formed of resin, and the upper surface of the heat-treating plate is made flat, whereby a reduced difference in the rate of heat transfer occurs between contact parts and non-contact parts on the surface of the substrate. Consequently, the substrate is heat-treated effectively while suppressing variations in heat history over the surface of the substrate.

Abstract: A label manufacturing apparatus includes a thermal head and a device for transporting a heat sensitive adhesive sheet. The control device operates the head in synchronization with timing of transporting of the sheet to activate the adhesive, determines if heating based on a last row of a heating pattern is completed before a trailing end of the sheet reaches a set position contacting the head, controls driving of the transporting device so that when it is determined that the heating based on the heating pattern last row is completed, the sheet is transported until the trailing end passes through the set position, and controls driving of the head so that when it is determined that the heating based on the last row of the heating pattern is completed, the heating based on the last row of the heating pattern is repeated until the trailing end passes through the set position.

Abstract: A label manufacturing apparatus has a thermal head with heating elements for heating at least a part of a heat sensitive adhesive sheet to place it into an adhesive state when the heat sensitive sheet is transported through a preselected position of the label manufacturing apparatus in which the heat sensitive sheet contacts the heating elements of the thermal head. A control device selectively operates the heating elements of the thermal head in synchronization with timing of transporting of the heat sensitive adhesive sheet through the preselected position to thereby heat the part of the heat sensitive adhesive sheet and place into the adhesive state, and stops operation of the heating elements so that a trailing end portion of the heat sensitive sheet is not heated and is not placed into an adhesive state when the trailing end portion reaches the preselected position.

Abstract: A method for processing solar cells comprising: providing a vertical furnace to receive an array of mutually spaced circular semiconductor wafers for integrated circuit processing; composing a process chamber loading configuration for solar cell substrates, wherein a size of the solar cell substrates that extends along a first surface to be processed is smaller than a corresponding size of the circular semiconductor wafers, such that multiple arrays of mutually spaced solar cell substrates can be accommodated in the process chamber, loading the solar cell substrates into the process chamber; subjecting the solar cell substrates to a process in the process chamber.

Abstract: The present invention includes: an upper container and a lower container relatively movable and uniting together into one body to form a processing space; a substrate holding part provided inside the lower container and mounting and holding the substrate thereon; and a delivery arm including a support member extending vertically downward from a lower surface of the upper container, and a delivery member supported by the support member and holding an outer peripheral portion of the substrate and delivering the substrate to/from the substrate holding part, wherein the delivery arm is movable together with the upper container in the vertical direction relative to the lower container, and a cutout groove capable of housing the delivery member is formed at a position corresponding to the delivery member at the outer peripheral portion of the substrate holding part.

Abstract: The present invention is a vertical boat for heat treatment having an auxiliary supporting member removably attached to each of supporting parts of a boat body, the auxiliary supporting member on which a substrate to be treated is to be placed, in which the auxiliary supporting member has a guiding member attached to the supporting part and a substrate supporting plate on which the substrate to be treated is to be placed, a hole is formed on an upper surface of the guiding member, the substrate supporting plate is inserted and fitted into the hole of the guiding member so as to be fixed, a height position of a placing surface for the substrate to be treated is higher than a height position of the upper surface of the guiding member, the substrate supporting plate is composed of silicon carbide and the guiding member is composed of quartz.

Abstract: A substrate support instrument includes a first support instrument portion and a second support instrument portion detachably combined with each other. Each of the first support instrument portion and second support instrument portion includes: a ceiling plate and a bottom plate facing each other upward and downward; a support pillar disposed in plurality along a peripheral edge portion of each of the ceiling plate and bottom plate, and configured to connect the ceiling plate and the bottom plate; and a support part disposed at a position corresponding to each of the support pillars, and configured to support a bottom of each substrate. In the support part, a height position is set such that a substrate supported in the first support instrument portion and a substrate supported in the second support instrument portion are alternately arranged, when the first support instrument portion is combined with the second support instrument portion.

Abstract: An apparatus for uniform reactive thermal treatment of thin-film materials includes a chamber enclosing a tube shaped space filled with a work gas and heaters disposed outside the chamber. The apparatus further includes a loading configuration for subjecting a plurality of planar substrates to the work gas in the tube shaped space. Baffles are disposed above and below the loading configuration.

Abstract: A deposition technique for forming an oxynitride film is provided. A highly reliable semiconductor element is manufactured with the use of the oxynitride film. The oxynitride film is formed with the use of a sputtering target including an oxynitride containing indium, gallium, and zinc, which is obtained by sintering a mixture of at least one of indium nitride, gallium nitride, and zinc nitride as a raw material and at least one of indium oxide, gallium oxide, and zinc oxide in a nitrogen atmosphere. In this manner, the oxynitride film can contain nitrogen at a necessary concentration. The oxynitride film can be used for a gate, a source electrode, a drain electrode, or the like of a transistor.

Abstract: A method of heating and conveying hydrocarbonaceous material in a retort structure having an internal volume, an outlet, a grate, a gas injector, and an auger. In the method the hydrocarbonaceous material is introduced into the internal volume through the inlet. The inlet substantially prevents gaseous transfer between the inner volume and the exterior of the retort structure. The hydrocarbonaceous material is passed through the grate. A gas heated to a first temperature is injected through the gas injector to heat the hydrocarbonaceous material while the hydrocarbonaceous material is atop the grate. The hydrocarbonaceous material is collected after passing through the grate. The hydrocarbonaceous material is then removed through the outlet.

Abstract: A molten salt treatment system and process can include one or more tubular conduits flowably connected to a molten salt reactor, the tubular conduit containing concentrically within it a pipe or a shaft separated by an annular space therebetween, and one or more gas sources connected to feed gas into the annular space. The system may include a scrubbing device flowably connected to a molten salt reactor off-gas outlet to receive an off-gas, a first heating device configured to heat the effluent from the scrubbing device, and a filtering device flowably connected to receive the effluent from the heating device. An overflow conduit may be flowably connected to a molten salt reactor overflow outlet to receive molten salt therefrom and discharge the molten salt to a salt recovery vessel, and a blower or other gas mover may be connected to the molten salt reactor and the recovery vessel to prevent backflow of cold gases through the overflow outlet to the molten salt reactor.

Abstract: Methods and apparatuses for heat treatment of semiconductor wafers are disclosed herein. A method of heating a semiconductor wafer in accordance with one embodiment includes heating the wafer in a loading enclosure of a heat treatment system above an ambient temperature external to the loading enclosure. The method also includes moving the heated wafer from the loading enclosure into a processing enclosure of the heat treatment system. In particular embodiments, the method can further include heating a flow of purge gas above the ambient temperature and introducing the flow of heated purge gas into the loading enclosure while the wafer is in the loading enclosure. In still further embodiments, the method can include heating a flow of process gas to a processing temperature and introducing the heated flow of process gas into the processing enclosure while the wafer is in the processing enclosure.

Abstract: A method and apparatus for manufacturing a semiconductor device is disclosed. In particular, the application discloses a method that performs a lithography process using a material capable of increasing a depth of focus so as to prevent efficiency of the lithography process from being degraded due to high integration of a semiconductor device, and a pressure-type bake oven as an apparatus for forming a high refractive material on a semiconductor substrate, having advantages of reducing manufacturing costs of a semiconductor manufacturing process and increasing efficiency of the lithography process.

Abstract: A method of a semiconductor process is provided. The semiconductor process at least includes a first high temperature furnace process and a second high temperature furnace process. In the method, the first high temperature furnace process is performed on a first wafer boat carrying at least a wafer. Then, the second high temperature furnace process is performed on a second wafer boat carrying at least the same wafer. In addition, before the second high temperature furnace process is implemented, a moving step is performed, such that a relative position of the wafer in the first wafer boat is different from that of the wafer in the second wafer boat.

Abstract: A vertical type heat processing apparatus prevents falling-down of a boat placed on a heat insulating mount due to an external force, such as an earthquake. The apparatus includes a heating furnace having a furnace port, a cover, a pair of substrate holding tools, each to be placed on the cover via a heat insulating mount and to hold multiple substrates, a rotating mechanism, and a lifting mechanism to raise and lower the cover to carry in and carry out the substrate holding tool relative to the furnace. While one of the substrate holding tools is located in the furnace, the other is placed on a table, for loading the substrates. Each substrate holding tool is carried between the table and the heat insulating mount due to a carrier mechanism. Further, a locking part and a part to be locked can be engaged with each other.

Abstract: In order to prevent occurrence of an unintentional non-heated part at a trailing end portion in a transporting direction of a heat sensitive adhesive sheet, in accordance with a matrix-like heating pattern of M0 columns×N0 rows, a thermal head and transporting means are driven, and a plurality of heating elements of the thermal head are selectively operated in synchronization with timing of transporting a heat sensitive adhesive sheet (2) by the transporting means. Thus, when at least a part of the heat sensitive adhesive sheet (2) is heated to develop adhesive properties, if heating based on a last row (N0th row) in the heating pattern is completed before a trailing end portion (2b) in the transporting direction of the heat sensitive adhesive sheet (2) reaches a position contacting with the heating element of the thermal head, the heat sensitive adhesive sheet (2) is transported until the trailing end portion (2b) passes through the position contacting with the heating element of the thermal head.

Abstract: A transfer mechanism 21 of a vertical heat treatment system 1 includes a base capable of vertical movement and turning movement, and plural substrate support devices, disposed on the base so as to be movable anteroposterior, that hold wafers W. Provided on the base 25 is a first sensor 45 that emits a light beam directed toward a direction in which the substrate support device 20 moves anteroposterior, and detects the target member upon receipt of a reflected light of the light beam. Provided on two tip end portions of the substrate support device 20 is a second sensor 40 that detects the target member upon interruption of a light beam traveling between the tip end portions by the target member. When a target member 44 provided at its specific positions with projections 49 and 50 is placed at a position in a wafer boat 8, the base 25 moves vertically and turns, and the substrate support device 20 moves anteroposterior.

Abstract: A method for annealing a multilayer wafer by subjecting the wafer to a high temperature treatment that includes at least a temperature ramp-up between a boat-in temperature and a process of at least 800° C.; at least a processing phase in the range conduct at or above the process temperature; and a temperature ramp-down from the processing phase to a boat-out temperature. The boat-in temperature is sufficiently lower than the boat-out temperature to reduce or avoid tearing-off defects on the wafer and to reduce particle contaminants on the wafer, as well as to reduce or avoid degrading wafer Dit compared to an annealing method where the boat-in and boat-out temperatures are closer in temperature.

Abstract: A heat treating apparatus includes a heating plate for heating a substrate coated with a coating liquid, a cooling plate for cooling the substrate and a heat pipe provided in the cooling plate, a cooling chamber being moved together with the cooling plate by the drive mechanism and accommodating a cooling liquid for cooling one end side of the heat pipe. The apparatus further includes a circulation passage provided in the heat treating apparatus to circulate the cooling liquid in the cooling chamber, a circulation pump for circulating the cooling liquid in the circulation passage; and a heat radiating member provided on the circulation passage to radiate the heat received by the cooling chamber to the outside of the heat treating apparatus.

Abstract: A thermal processing apparatus and method with predictive temperature correction. Distances are measured from a backside of the wafer relative to a reference plane. Heat is transferred to the backside of the substrate in relation to the measured distances. This allows a baking unit to uniformly heat the substrate to compensate for irregularities or warpage.

Abstract: A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.

Abstract: A cement product is disclosed. The cement product includes clinker defined by a feedstock material and a ladle metallurgical facility slag material derived from a ladle metallurgical facility steel production system. A system and method for manufacturing clinker is also disclosed.

Abstract: The present invention provides a wafer holder, a wafer support member, a wafer boat and a heat treatment furnace, which are capable of sufficiently suppressing slip dislocations, without lowering productivity and at low cost, in the high temperature heat treatment of silicon wafers, and said wafer holder is characterized in that: the wafer holder is composed of a wafer support plate and three or more wafer support members mounted on said wafer support plate, each of the wafer support members having a wafer support portion or more; at least one of said wafer support members is a tilting wafer support member which has a plurality of upward-convex wafer support portions on the upper surface and is tiltable with respect to said wafer support plate; and the wafer is supported by at least four wafer support portions.

Abstract: A film is provided for use in a cassette. Preferably, the cassette is used in a waste disposal system. The film is a high density polyethylene film resin having both a low melt index and a high density, thereby providing improved odor control capabilities and enhanced tear strength and assembly strength.

Abstract: A floating substrate reactor allows heat treatment of a series of semiconductor substrates, one by one. The heat treatment occurs while flowing gas suspends a substrate between two heated surfaces of the reactor. The two heated surfaces each have multiple heating zones. The heating zones are heated to desired temperature(s) and a substrate is then loaded into the reactor for heat treatment. Upon loading, the relatively cold substrate absorbs heat and cools the process chamber. A heat spike, which can be varied, is applied to the heating zones to heat the reactor to the desired temperature again. The substrate, however, is unloaded from the reactor before the temperatures of the heating zones have reached the desired temperature. After the heating zones have reached the desired temperature, the next substrate in the series of substrates is loaded into the reactor for heat treatment.

Abstract: A method is provided for heating a substrate in a process chamber using a heated chuck. In accordance with the method, the substrate is lowered onto the chuck and heated to a first temperature less than a temperature of the chuck. The substrate is then raised away from the chuck, and a process is carried out on the substrate while the substrate is supported above the chuck. The substrate is then lowered back to the chuck and heated to a second temperature greater than the first temperature for further processing of the substrate.

Abstract: A pedestal for use in a high temperature vertical furnace for the processing of semiconductor wafers provides a closure and heat insulation for the lower end of the furnace and is a wafer boat support. The pedestal, comprising quartz-enveloped insulation material, supports a wafer boat at a boat support level and is provided with an upper section disposed above the boat support level. The upper section comprises enveloped insulating material. The envelope of the upper section is also formed of quartz and the insulating material in the upper section has a lower thermal conductance than the insulating material in a lower quartz enveloped section.

Abstract: A system and method for processing large area substrates is provided. In one embodiment, a processing system includes a transfer chamber having at least one processing chamber and a substrate staging system coupled thereto. The staging system includes a load lock chamber having a first port coupled to the transfer chamber and a heat treating station coupled to a second port of the load lock chamber. A load lock robot is disposed in the load lock chamber to facilitate transfer between the heat treating station and the load lock chamber.

Abstract: A method and apparatus for loading a substrate is applied to a semiconductor manufacturing apparatus in which a substrate is carried in a vacuum-processing chamber, and loaded on a heated processing table, and further is applied with predetermined processing in a cold-wall processing mode. In the method, for example, the substrate is temporarily stopped before being loaded on the processing table. By the temporal stop, the temperature difference between the substrate and the processing table becomes smaller. When the temperature difference becomes smaller, even if the substrate expands due to heat from the processing table, the degree of the change becomes smaller and therefore it is possible to reduce peeling of films deposited on the substrate-loading surface of the processing table.

Abstract: A furnace design that combines the benefits of oxygen enriched combustion, intense flame radiation, highly preheated combustion air, exhaust gas recirculation, buoyancy driven flows and NOx reburn chemistry in a single unit to significantly reduce energy consumption and pollutant formation. The furnace also allows burning low calorie fuels and fuels of different types. It substantially increases the level of radiation heat transfer and its uniformity, thereby enhancing furnace productivity and provides an oxygen free atmosphere to prevent oxidation of materials being heated.

Abstract: A substrate processing apparatus is provided. When a wafer W held by a holding unit 35 is accommodated in a processing chamber 34a of a processing container 34 equipped with a heater 31A, the wafer W is heated to a processing temperature while positioning the wafer W at an adjacent position Pa resulting from making the wafer W approach the heating surface of the heater 31A, i.e. flat bottom surface of a container body 32. After heating the wafer W to the predetermined temperature, the wafer W is separated from the flat bottom surface of the container body 32 to a processing position Pb. In this state, a processing chamber 34a of the processing container 34 is supplied with a processing fluid, while the holding unit 35 and the heater 31A are relatively moved close to and apart from each other intermittently or continuously.

Abstract: Method and device for the heat treatment of substrates, wherein the substrates are positioned in the vicinity of a heated, essentially flat furnace body extending over the surface of the substrate. In order to provide a reproducible treatment when treating a number of substrates successively, the temperature of the furnace body is measured so close to the surface adjacent to the substrate that the withdrawal of heat from the furnace body by the substrate can be detected. The introduction of each substrate takes place at a point in time when the temperature measured in this way is, within certain limits, equal to a desired initial treatment temperature Ttrig.

Abstract: A support sleeve for supporting a high temperature process tube comprises one or more circumferential channels, each channel connected to either a feed for gas or a vacuum exhaust. One circumferential channel opens to the top surface of the sleeve, on which the process tube is supported to provide a gas/vacuum seal between the process tube and support sleeve. Another circumferential channel is connected to a gas feed and provided with gas injection holes, evenly distributed along the support sleeve perimeter to provide a cylindrically symmetrical injection of process gas into the process tube. Another circumferential channel is connected to an exhaust for gas and provided with gas exhaust holes, evenly distributed along the circumference of the support sleeve, to provide a cylindrically symmetric exhaust of process gases from the process tube.

Abstract: A substrate processing apparatus includes a substrate holder for holding a substrate with a holding angle of 45 degrees to 90 degrees with respect to a horizontal plane, a conveying system to convey the substrate with the substrate holder, a process chamber in which the substrate is processed, a load-lock chamber in which the substrate temporarily stays, and an intermediate chamber provided between the process chamber and the load-lock chamber. The conveying system conveys the substrate along the first direction from the load-lock chamber to the intermediate chamber, and from the intermediate chamber to the process chamber, and also conveys the substrate along the second direction perpendicular to the first direction.

Abstract: A positive pressure gradient is maintained across an open access port of an interface chamber such as a load lock chamber which provides an interface between a low pressure chamber such as a transfer or buffer chamber, and a high pressure area such as a staging area or factory interface area. When the access port of the interface chamber is open to the high-pressure area, the positive pressure gradient may be used in some applications to inhibit the flow of gasses from the high-pressure area into the interior of the interface chamber.

Abstract: An apparatus and method to position a wafer onto a wafer holder and to maintain a uniform wafer temperature is disclosed. The wafer holder or susceptor comprises a recess or pocket whose surface is concave and includes a grid containing a plurality of grid grooves separating protrusions. The concavity and grid grooves define an enclosed flow volume between a supported wafer and the susceptor surface, as well as an escape area, or total cross-sectional area of the grid grooves opening out from under the periphery of the wafer. These are chosen to reduce the wafer slide and curl during wafer drop-off and wafer stick during wafer pick-up, while improving thermal uniformity and reducing particle problems. In another embodiment, centering locators in the form of thin, radially placed protrusions are provided around the edge of the susceptor pocket to reduce further the possibility of contact between the wafer and the outer edge of the susceptor.

Abstract: The present invention relates to a method for subjecting a substrate on which a coating film is formed to heat processing, and the method comprises the steps of heating the substrate to a predetermined high temperature and decreasing the temperature of the substrate to a predetermined low temperature, wherein in the step of decreasing the temperature of the substrate to the low temperature, a first step of decreasing the temperature of the substrate from the predetermined high temperature to a predetermined intermediate temperature and a second step of decreasing the temperature of the substrate from the intermediate temperature to the predetermined low temperature are performed separately.