Including Forming A Semiconductor Junction (437/15) Patents (Class 438/FOR149)
Foreign Patent Art Collections
- By forming total dielectric isolation (437/62) (Class 438/FOR222)
- By forming vertical isolation combining dielectric and PN junction (437/63) (Class 438/FOR223)
- Using vertical dielectric (air-gap/insulator) and horizontal PN junction (437/64) (Class 438/FOR224)
- Isolation by PN junction only (437/74) (Class 438/FOR234)
- Including heat to anneal (437/82) (Class 438/FOR242)
- Growing single crystal on amorphous substrate (437/83) (Class 438/FOR243)
- Growing single crystal on single crystal insulator (SOS) (437/84) (Class 438/FOR244)
- Including purifying stage during growth (437/85) (Class 438/FOR245)
- Using transitory substrate (437/86) (Class 438/FOR246)
- Using inert atmosphere (437/87) (Class 438/FOR247)
- Using catalyst to alter growth process (437/88) (Class 438/FOR248)
- Growth through opening (437/89) (Class 438/FOR249)
- Specified crystal orientation other than (100) or (111) planes (437/93) (Class 438/FOR253)
- Introducing minority carrier life time reducing dopant during growth, i.e., deep level dopant Au (Gold), Cr (Cromium), Fe (Iron), Ni (Nickel), etc. (437/94) (Class 438/FOR254)
- Autodoping control (437/95) (Class 438/FOR255)
- Forming buried regions with outdiffusion control (437/97) (Class 438/FOR257)
- Growing mono and polycrystalline regions simultaneously (437/99) (Class 438/FOR259)
- Growing silicon carbide (SiC) (437/100) (Class 438/FOR260)
- Growing amorphous semiconductor material (437/101) (Class 438/FOR261)
- Source and substrate in close-space relationship (437/102) (Class 438/FOR262)
- Vacuum growing using molecular beam, i.e., vacuum deposition (437/105) (Class 438/FOR265)
- Growing single layer in multi-steps (437/108) (Class 438/FOR268)
- Using electric current, e.g., Peltier effect, glow discharge, etc. (437/ 113) (Class 438/FOR273)
- Using seed in liquid phase (437/114) (Class 438/FOR274)
- Liquid and vapor phase epitaxy in sequence (437/117) (Class 438/FOR277)
- Involving capillary action (437/118) (Class 438/FOR278)
- Sliding liquid phase epitaxy (437/119) (Class 438/FOR279)
- Tipping liquid phase epitaxy (437/125) (Class 438/FOR285)
- Heteroepitaxy (437/126) (Class 438/FOR286)
- Using flux (437/135) (Class 438/FOR295)
- Passing electric current through material (437/136) (Class 438/FOR296)
- With application of pressure to material during fusing (437/137) (Class 438/FOR297)
- Including plural controlled heating or cooling steps (437/138) (Class 438/FOR298)
- Including diffusion after fusion step (437/139) (Class 438/FOR299)
- Including additional material to improve wettability or flow characteristics (437/140) (Class 438/FOR300)
- To control carrier lifetime, i.e., deep level dopant Au (Gold), Cr (Chromium), Fe (Iron), Ni (Nickel), etc. (437/142) (Class 438/FOR302)
- Al (Aluminum) dopant (437/143) (Class 438/FOR303)
- Li (Lithium) dopant (437/144) (Class 438/FOR304)
- Including nonuniform heating (437/145) (Class 438/FOR305)
- To solid state solubility concentration (437/146) (Class 438/FOR306)
- Using multiple layered mask (437/147) (Class 438/FOR307)
- Forming partially overlapping regions (437/149) (Class 438/FOR309)
- Plural dopants in same region, e.g., through same mask opening, etc. (437/150) (Class 438/FOR310)
- Plural dopants simultaneously in plural region (437/152) (Class 438/FOR312)
- Single dopant forming plural diverse regions (437/153) (Class 438/FOR313)
- Using metal mask (437/155) (Class 438/FOR315)
- Outwardly (437/156) (Class 438/FOR316)
- Laterally under mask (437/157) (Class 438/FOR317)
- Edge diffusion by using edge portion of structure other than masking layer to mask (437/158) (Class 438/FOR318)
- From melt (437/159) (Class 438/FOR319)
- From solid dopant source in contact with substrate (437/160) (Class 438/FOR320)
- From vapor phase (437/165) (Class 438/FOR325)
There are no patents to show for this class.
