Doping During Fluid Growth Of Semiconductor Material On Substrate (437/81) Patents (Class 438/FOR241)

Foreign Patent Art Collections

Including heat to anneal (437/82) (Class 438/FOR242)
Growing single crystal on amorphous substrate (437/83) (Class 438/FOR243)
Growing single crystal on single crystal insulator (sos) (437/84) (Class 438/FOR244)
Including purifying stage during growth (437/85) (Class 438/FOR245)
Using transitory substrate (437/86) (Class 438/FOR246)
Using inert atmosphere (437/87) (Class 438/FOR247)
Using catalyst to alter growth process (437/88) (Class 438/FOR248)
Growth through opening (437/89) (Class 438/FOR249)
Specified crystal orientation other than (100) or (111) planes (437/93) (Class 438/FOR253)
Introducing minority carrier life time reducing dopant during growth, i.e., deep level dopant au (gold), cr (cromium), fe (iron), ni (nickel), etc. (437/94) (Class 438/FOR254)
Autodoping control (437/95) (Class 438/FOR255)
Forming buried regions with outdiffusion control (437/97) (Class 438/FOR257)
Growing mono and polycrystalline regions simultaneously (437/99) (Class 438/FOR259)
Growing silicon carbide (sic) (437/100) (Class 438/FOR260)
Growing amorphous semiconductor material (437/101) (Class 438/FOR261)
Source and substrate in close-space relationship (437/102) (Class 438/FOR262)
Vacuum growing using molecular beam, i.e., vacuum deposition (437/105) (Class 438/FOR265)
Growing single layer in multi-steps (437/108) (Class 438/FOR268)
Using electric current, e.g., peltier effect, glow discharge, etc. (437/ 113) (Class 438/FOR273)
Using seed in liquid phase (437/114) (Class 438/FOR274)
Liquid and vapor phase epitaxy in sequence (437/117) (Class 438/FOR277)
Involving capillary action (437/118) (Class 438/FOR278)
Sliding liquid phase epitaxy (437/119) (Class 438/FOR279)
Tipping liquid phase epitaxy (437/125) (Class 438/FOR285)
Heteroepitaxy (437/126) (Class 438/FOR286)

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