Abstract: Patterned ion-bombarded carbon electron emitters and the processes for producing them. The electron emitters are produced by forming a layer of composite of carbon particles and glass on a substrate then bombarding the composite with an ion beam. The electron emitters are useful in field emitter cathode assemblies which are fabricated into flat panel displays.

Abstract: A vacuum microelectronic device (10,40) is formed by applying a first conductor (13,14) to a substrate (11) and utilizing the first conductor (13,14) to expose a dielectric material (18) and a second conductive material (19) from a back surface of the substrate (11). A second conductor (29) and a dielectric (28) are formed from the second conductive material (19) and the dielectric material (18), respectively. This method self-aligns the dielectric (28) and the second conductor (29) with the first conductor (13,14). Electron emitters (31,33) of the vacuum microelectronic device (10,40) are formed on the first conductor (13,14).

Abstract: A method for fabricating row lines over a field emission array employs only two mask steps to define row lines and pixel openings. A layer of conductive material is disposed over a substantially planarized surface of a grid of semiconductive material and a layer of passivation material is disposed over the layer of conductive material. Row lines and pixel openings may be formed through the passivation and conductive layers by use of a first mask. The row lines may be further defined by using a second mask to remove semiconductive material of the grid. Alternatively, a first mask may be used to fully define row lines from the layers of passivation, conductive, and semiconductive material, while a second mask may be used to define pixel openings through the layers of passivation and conductive material. Field emission arrays fabricated by such methods are also disclosed.

Abstract: A method of forming an extraction grid for field emitter tip structures is described. A conductive layer is deposited over an insulative layer formed over the field emitter tip structures. The conductive layer is milled using ion milling. Owing to topographical differences along an exposed surface of the conductive layer, ions strike the exposed surface at various angles of incidence. As etch rate from ion milling is dependent at least in part upon angle of incidence, a selectivity based on varying topography of the exposed surface (“topographic selectivity”) results in non-uniform removal of material thereof. In particular, portions of the conductive layer in near proximity to the field emitter tip structures are removed faster than portions of the conductive layer between emitter tip structures. Thus, portions of the insulative layer in near proximity to the field emitter tip structures may be exposed while leaving intervening portions of the conductive layer for forming the extraction grid.

Abstract: The present invention relates to a cathode for an electron gun for increasing its life cycle under a high current density load by ensuring a diffusion path of reducing component served for generating free radical barium. The present invention discloses a cathode for an electron gun comprising a base metal composed of nickel and at least one kind of reducing component, an upper metal layer formed by spraying powder to the surface of the base metal, implanting Ni thereto, or grinding the surface thereof and heating it, and an electron emitting layer containing alkaline earth metal oxide including at least barium on the upper metal layer.

Abstract: The present invention relates to field emitters and methods of fabricating the same wherein the field emission tips of the field emitters are formed by utilization of a facet etch. An etch mask is patterned on a conductive substrate in the locations desired for subsequently formed field emission tips. The conductive substrate is then anisotropically etched to translate the shape of the mask into the conductive substrate which forms a vertical column from the conductive substrate. The etch mask is then removed and the vertical column is facet etched to form the field emission tip. Low work function materials may also be incorporated into the field emission tips to improve field emission tip performance by depositing a layer of low work function material on the conductive substrate prior to patterning the etch mask.

Abstract: A method for fabricating field emission arrays employs a single mask to define emitter tips, their corresponding resistors, and, optionally, conductive lines. One or more material layers from which the emitter tips and resistors will be defined are formed over and laterally adjacent substantially parallel conductive lines. The exposed surface of the layer or layers of emitter tip and resistor material or materials may be planarized. The emitter tips and underlying resistors are then defined. Substantially longitudinal center portions of the conductive lines may be exposed between adjacent lines of emitter tips, with at least a lateral edge portion of each conductive line being shielded by material that remains following the formation of the emitter tips and resistors. The exposed portions of the conductive lines may be removed in order to define conductive traces. Field emission arrays and display devices fabricated by such methods are also disclosed.

Abstract: A method of fabricating row lines over a field emission array. The method employs only two mask steps to define row lines and pixel openings through selected regions of each of the row lines. In accordance with the method of the present invention, a layer of conductive material is disposed over a substantially planarized surface of a grid of semiconductive material. A layer of passivation material is then disposed over the layer of conductive material. In one embodiment of the method, a first mask may be employed to remove passivation material and conductive material from between adjacent rows of pixels and from substantially above each of the pixels of the field emission array. A second mask is employed to remove semiconductive material from between the adjacent rows of pixels. In another embodiment of the method, a first mask is employed to facilitate removal of passivation material, conductive material, and semiconductive material from between adjacent rows of pixels of the field emission array.

Abstract: There is provided a cathode which is easily operable, harmless, and stable at high temperature at least 1,400° C. as well as excellent in electron emission characteristics at the same time, and the process for preparing the same. The cathode of the present invention comprises a polycrystalline substance or a polycrystalline porous substance of high-melting point metal material and an emitter material dispersed into said polycrystalline substance or polycrystalline porous substance in an amount of 0.1 to 30% by weight in the cathode, wherein the emitter material comprises at least one selected from the group consisting of hafnium oxide, zirconium oxide, lanthanum oxide, cerium oxide and titanium oxide.

Abstract: To suppress occurrence of abnormal voltage in the energization process. The present invention provides a method of manufacturing an electron source comprising an electron-emitting device comprising a pair of electroconductive members, and first wires and second wires being connected to the pair of electroconductive members, respectively, the method comprising the step of applying a pulse voltage to the pair of electroconductive members via the first and/or second wires, wherein the pulse voltage is a pulse where a specific frequency band included in a pulse voltage outputted from a pulse power supply is restricted.

Abstract: Electrophoretic deposition provides an efficient process for manufacturing a field emission cathode. Particles of an electron emitting material mixed with particles of an insulating material are deposited by electrophoretic deposition on a conducting layer overlying an insulating layer to produce the cathode. By controlling the composition of the deposition bath and by mixing insulating particles with emitting particles, an electrophoretic deposition process can be used to efficiently produce field emission cathodes that provide spatially and temporally stable field emission. The deposition bath for the field emission cathode includes an alcohol, a charging salt, water, and a dispersant. The field emission cathodes can be used as an electron source in a field emission display device.

Abstract: A field emission array includes a plurality of pixels. Each pixel includes at least one resistor, at least one emitter tip overlying each resistor, and at least one substantially vertically oriented conductive line positioned laterally adjacent each resistor. The pixels may be arranged in substantially parallel lines. Adjacent pixels are separated and electrically isolated from one another by recessed areas located therebetween. Each conductive line is located within a recessed area. The conductive lines of a field emission array that includes lines of pixels may contact the resistors of each pixel of the corresponding line of pixels. Base portions of at least some of the emitter tips of the field emission array may overlie a portion of the conductive line that corresponds to the pixel of which such emitter tips are a part. Field emission displays that include such field emission arrays are also disclosed.

Abstract: A surface conduction electron-emitting device has an electroconductive film including an electron-emitting region between a pair of electrode on a substrate. The electroconductive film is formed by producing a precursor film of an organic metal compound or complex thereof and then turning the precursor film into the electroconductive film by keeping the temperature of the film above the decomposition temperature of the organic metal compound or the complex thereof and applying a voltage to the film. A plurality of such electron-emitting devices are arranged on a substrate in a matrix or ladder-like manner to constitute an electron source. Such an electron source is used with an image-forming member disposed vis-a-vis the electron source to form an image-forming member.

Abstract: An emission site for a large area passive matrix cold cathode field emission display having an emission tip with a sharp profile is disclosed. A metallic film formed of iridium silicide (IrSi) is used to coat the tip. By using IrSi the tips of the emission sites can be formed at low temperatures. In addition, IrSi is a fine grain material that maintains a sharp profile and can be formed in a layer as thin as 100 Å.

Abstract: A method of manufacturing a field emission element comprises steps of: (a) forming a base layer comprising a gate film being capable of chemical reaction accompanied by volume expansion; (b) forming an insulating film on said base layer; (c) forming a taper-shaped first hole in said insulating film; (d) forming a second hole in said gate film by anisotropically etching said gate film using said insulating film as a mask; (e) reacting a part of a surface layer of said gate film to form a volume-expanded film by chemical reaction; (f) forming an emitter film made of an electrically conductive material on said insulating film and said expanded film; and (g) exposing said emitter film and said gate film by removing unnecessary parts comprising said substrate and said expanded film.

Abstract: A method for fabricating field emission arrays employs a single mask to define emitter tips, their corresponding resistors, and, optionally, conductive lines. One or more material layers from which the emitter tips and resistors will be defined are formed over and laterally adjacent substantially parallel conductive lines. The exposed surface of the layer or layers of emitter tip and resistor material or materials may be planarized. The emitter tips and underlying resistors are then defined. Substantially longitudinal center portions of the conductive lines may be exposed between adjacent lines of emitter tips, with at least a lateral edge portion of each conductive line being shielded by material that remains following the formation of the emitter tips and resistors. The exposed portions of the conductive lines may be removed in order to define conductive traces. Field emission arrays and display devices fabricated by such methods are also disclosed.

Abstract: An improved method for sharpening emitter sites for cold cathode field emission displays (FEDS) includes the steps of: forming a projection on a baseplate; growing an oxide layer on the projection using a low temperature oxidation process; and then stripping the oxide layer. Preferred low temperature oxidation processes include: wet bath anodic oxidation, plasma assisted oxidation and high pressure oxidation. These low temperature oxidation processes grow an oxide film using a consumptive process in which oxygen reacts with a material of the projection. This permits emitter sites to be fabricated with less distortion and grain boundary formation than emitter sites formed with thermal oxidation. As an example, emitter sites can be formed of amorphous silicon. In addition, low temperature materials such as glass can be used in fabricating baseplates without the introduction of high temperature softening and stress.

Abstract: An impregnated cathode whose initial electron emitting performance, lifetime property, and insulating property for an electron gun are excellent and that is suitable for mass production, and a method for manufacturing the same. In the impregnated cathode, the porosity of the sintered body of porous metal is continuously increased as the distance in the depth direction from an electron emitting face is increased. A pellet of sintered body of metal raw material has pores in it. The pores are filled with electron emitting material. The porosity is continuously increased as the distance in the depth direction from an electron emitting face is increased. Thus, since the discontinuity inside the pellet is not formed, a reaction generating free Ba continuously and smoothly proceeds on the entire pellet. In addition, since raw material powder having more than one kind of particle size is not necessary to be used, the manufacturing process can be simplified. Moreover, various functions such as lifetime property, etc.

Abstract: The present invention relates to a cathode for an electron gun for increasing its life cycle under a high current density load by ensuring a diffusion path of reducing component served for generating free radical barium. The present invention discloses a cathode for an electron gun comprising a base metal composed of nickel and at least one kind of reducing component, an upper metal layer formed by spraying powder to the surface of the base metal, implanting Ni thereto, or grinding the surface thereof and heating it, and an electron emitting layer containing alkaline earth metal oxide including at least barium on the upper metal layer.

Abstract: The emission properties of aligned nanotube arrays are improved by truncating the ends of the nanotubes. Truncation provides nanotubes having a height within, for example, 30% of the average truncated nanotube height, as well as ends substantially free of end caps. The cap-free ends provide desirable field concentration, and the height uniformity increases the number of participating nanotubes.

Abstract: A method for producing an oxide cathode including a sleeve containing a heater coil, a cathode substrate provided on one end of the sleeve, and an emissive material layer formed by thermally decomposing an alkaline earth metal carbonate layer adhered onto the cathode substrate, which method includes adhering the alkaline earth metal carbonate onto the cathode substrate so that it has a bulk density of 0.5 to 0.8 g/cm3, then pressing it so that the bulk density becomes not more than 0.9 g/cm3, and then thermally decomposing it in vacuum. Accordingly, an oxide cathode in which the current density distribution of emission electrons is smooth and an electron emission characteristic is not deteriorated when operated for a long time is realized, and a method for producing a cathode-ray tube with high resolution in which moire is invisible is provided.

Abstract: In a field emission film used for a field emission cathode, a filamentous structure layer is formed in the vicinity of tops of acicular projections to emit electrons. The filamentous structure layer serves to remarkably increase emission points and, as a result, to improve an emission current density. The filamentous structure layer may be composed of a carbon and is obtained by carrying out plasma processing within a hydrogen gas and/or an oxygen gas for a long time.

Abstract: A method of fabricating a field emission array that employs a single mask to define the emitter tips thereof and their corresponding resistors. A layer of conductive material is disposed over a substrate of the field emission array. A plurality of substantially mutually parallel conductive lines is defined from the layer of conductive material. At least one layer of semiconductive material or conductive material is disposed over the conductive lines and over the regions of the substrate exposed between adjacent conductive lines. A mask material is disposed over the layer of semiconductive material or conductive material, substantially above each of the conductive lines. Portions of the layer of semiconductive material or conductive material exposed through the mask material may be removed to expose substantially longitudinal center portions of the conductive lines. Other portions of the layer of semiconductive material or conductive material may remain over peripheral lateral edges of the conductive lines.

Abstract: In an electron emission element having an emitter section for emitting electrons, the emitter section includes, on a first conductive electrode, a structure in which at least a first semiconductor layer, a second semiconductor layer, an insulating layer and a second conductive electrode are deposited sequentially; and the first and second semiconductor layers include at least one of carbon, silicon and germanium as a main component, and the first semiconductor layer includes at least one type of atoms among carbon atom, oxygen atoms and nitrogen atoms which is different from the main component.

Abstract: A method for polishing a grid of a field emission display (FED) with a polishing slurry contain very small particle of colloidal particles of amorphous silica in an alkaline medium. The method results in highly selective planarization well-suited for chemical-mechanical polishing (CMP) of the grid for the self-aligned CMP-FED fabrication process. An FED grid made according to this method is also disclosed.

Abstract: An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a {100} face, and the diamond protrusion is surrounded by {111} faces.

Abstract: A x-ray tube comprises a cathode cup assembly. The cathode cup assembly comprises a filament positioned in a cathode cup. A surface of the cathode cup assembly is exposed to incident infrared radiation, and the surface is adapted to reflect a substantial portion of the incident radiation, in which the radiation has a wavelength in a range from about 0.2 &mgr;m to about 5.0 &mgr;m.

Abstract: Disclosed is a method of fabricating a nano-tube that enables shortly cutting off said nano-tube without deteriorating said same and that when said nano-tube is used as said emitter can provide an improved flat-ability of said surface of said emitter, a method of manufacturing a field-emission type cold cathode that can provide an improved flat-ability of said surface of said emitter and that resultantly can cause an emission of a uniform, stable high-emission electric current, and a method of manufacturing a display device that includes a method of fabricating a nano-tube and/or a method of manufacturing a field-emission type cold cathode. The method of fabricating a nano-tube according to said present invention includes said step of radiating ions 2 onto a nano-tube 1 and said step of oxidizing said nano-tube 1.

Abstract: The present invention is intended to efficiently concentrate an electric field and to improve electron emission efficiency in a field emission cathode constituting a flat display device. A field emission cathode constituting a flat display device is constituted to have an electron emission section arranged to face an electron applied surface. At least the electron emission section is formed out of conductive, thin plate-like fine particles. A substance having a work function of 2 to 3 [eV] is bonded on the surfaces of the thin plate-like fine particles.

Abstract: Disclosed is an impregnated cathode structure for a cathode ray tube and its manufacturing method, in which electron emitting material impregnated in a pellet is free from an effect of the welding heat generated when the pellet is secured to a heater sleeve. The impregnated cathode structure has a pellet assembly including a pellet and a pellet fixing sheet. The pellet is attached to a first surface of the pellet fixing sheet, which has a plurality of protuberances. The pellet is manufactured by pressing and sintering, and impregnating electron emitting material into the porous of the pellet. The pellet sleeve is inserted in and welded to a heater sleeve. A heater sleeve is welded to a second surface of the pellet fixing sheet, which is opposite to the first surface.

Abstract: An improved process for fabricating nanotube field emitter structures is provided, in which the nanotubes protrude from a supporting base material to improve emission properties. The resulting emitter structure are useful in a variety of devices, including microwave vacuum tube devices and flat-panel, field-emission displays. To attain the protruding nanotube emitter structure, according to one embodiment of the invention, nanotubes and metal particles are mixed and consolidated into a compact, and the compact is then sectioned to expose a substantial number of nanotube ends. A layer of the metal is selectively etched from the sectioned surface, leaving the exposed nanotubes protruding from the surface. The extent of protrusion is at least twice the average diameter of the nanotubes, advantageously at least ten times the average diameter of the nanotubes.

Abstract: A field emission electron source comprising an electrically conductive substrate, an oxidized or nitrided porous polysilicon layer formed on the surface of said electrically conductive substrate on one side thereof and having nano-structures and a thin metal film formed on said oxidized or nitrided porous polysilicon layer. Voltage is applied to said thin metal film used as a positive electrode with respect to said electrically conductive substrate thereby to emit electron beam through said thin metal film.

Abstract: In an electron source having a plurality of surfaceconduction electron-emitting devices, the electrical characteristics of the surfaceconduction electron-emitting devices are made, controllable, and uniform. For this purpose, the electron emission characteristic of a selected surfaceconduction electron-emitting device is adjusted with a correction process of applying a voltage higher than a practical driving voltage to the device.

Abstract: An electron-emitting device comprises a pair of electrodes and an electroconductive thin film therebetween having an electron-emitting region. The electroconductive thin film is coated with an additional film at the electron-emitting region to provide an additional resistance within a range from 500 &OHgr; to 100 k&OHgr;.

Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. It the silicided layer is treated at a temperature above 1000° C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

Abstract: In a construction of electrode for a high pressure discharge lamp used with maintaining a high input of electricity, which discharge lamp comprises a valve composed of a luminescence tube having a swelled portion at the middle thereof, and an anode and a cathode placed opposite to each other, the cathode is composed of a metal with a high melting temperature doped with a electron-emitting substance and having a tapered portion toward the discharge side, the slope portion of said tapered portion being subjected to carburization at said tapered portion, and a non-treated portion being formed at the edge of the tapered portion continuous to the carburized portion.

Abstract: An emitter material for a CRT comprises mixed crystal or solid solution of at least two kinds of alkaline earth metal carbonate, wherein at least one alkaline earth metal carbonate is dispersed or separated in the mixed crystal or solid solution. The alkaline earth metal carbonate, which is an emitter material for the CRT, is coated onto the base metal and thermally decomposed in a vacuum to from an emitter of an alkaline earth metal. This emitter, which is proper for a larger screen size, high brightness and high resolution CRT, can be provided with enough life characteristics even under the operating condition of the emission current density of 2A/cm2.

Abstract: In order to suppress variation in delivery amounts in dispensing a material for forming electron emitting portions, a substantially homogeneous material is dispensed from a plurality of output portions to each of plural objective portions. This averages amounts of the material dispensed to the respective objective portions even if there is variation in delivery amounts of material from the respective output portions.

Abstract: A cathode structure suitable for a flat panel display is provided with coated emitters. The emitters are formed with material, typically nickel, capable of growing to a high aspect ratio. These emitters are then coated with carbon containing material for improving the chemical robustness and reducing the work function. One coating process is a DC plasma deposition process in which acetylene is pumped through a DC plasma reactor to create a DC plasma for coating the cathode structure. An alternative coating process is to electrically deposit raw carbon-based material onto the surface of the emitters, and subsequently reduce the raw carbon-based material to the carbon containing material. Work function of coated emitters is typically reduced by about 0.8 to 1.0 eV.

Abstract: A method of fabricating field emission arrays which employs a single mask to define emitter tips and their corresponding resistors. Column lines may also be defined without requiring the use of an additional mask. The method includes disposing substantially mutually parallel conductive lines onto a substrate of the field emission array. The conductive lines may be patterned from a layer of conductive material or selectively deposited onto the substrate. One or more material layers from which the emitter tips and resistors will be defined are disposed onto the conductive lines and the regions of substrate exposed between adjacent conductive lines. The exposed surface of the layer or layers of emitter tip and resistor material or materials may be planarized. A mask is disposed over the substantially planar surface.

Abstract: A method of fabricating row lines over a field emission array. The method employs only two mask steps to define row lines and pixel openings through selected regions of each of the row lines. In accordance with the method of the present invention, a layer of conductive material is disposed over a substantially planarized surface of a grid of semiconductive material. A layer of passivation material is then disposed over the layer of conductive material. In one embodiment of the method, a first mask may be employed to remove passivation material and conductive material from between adjacent rows of pixels and from substantially above each of the pixels of the field emission array. A second mask is employed to remove semiconductive material from between the adjacent rows of pixels. In another embodiment of the method, a first mask is employed to facilitate removal of passivation material, conductive material, and semiconductive material from between adjacent rows of pixels of the field emission array.

Abstract: The preparation and use of diamond as an electron emission material is disclosed. Satisfactory measurements were conducted on diamond coatings deposited on WC-Co alloy by a multiple pulsed laser process. The electron emission was measured in a diode configuration with a diamond surface-anode spacing of 20 and 50 &mgr;m in vacuum at P=10−7 Torr. Current densities of 6 mA/cm were calculated at an applied of voltage of 3000 V (for 20 &mgr;m). Analysis proved that electron field emission provided by a diamond grown by a multiple pulsed laser process proved to satisfactorily meet the specified demands.

Abstract: An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a {100} face, and the diamond protrusion is surrounded by {111} faces.

Abstract: An electron source comprises one or more electron-emitting devices, especially of surface conduction type, and is provided with means for supplying an activating substance to the device(s). The means comprises preferably a substance source and a heater or electron beam generator for gasifying the substance source. The electron source can be combined with an image-forming member (e.g. fluorescent body) to constitute an image-forming apparatus. The means is used for in situ activation or re-activation of the electron-emitting device(s).

Abstract: An electron emitter composition comprising electron emitting materials, dispersion agent, binder, and pure water is provided.An electron emitter of an FED is produced by the steps of forming a photoresist layer by coating and drying a photoresist composition on an electrode formed on a back plate (cathode plate); exposing and developing the photoresist layer into a predetermined pattern using a mask; forming an electron emitting layer by coating and drying an electron emitter composition consisting of electron emitting materials, a binder, a dispersion agent, and pure water on the developed photoresist layer; exposing the photoresist layer by etching the electron emitting layer; and washing and drying it after stripping the exposed photoresist layer.

Abstract: A high aspect ratio gated emitter structure and a method of making the structure are disclosed. Emitters may be provided in a densely packed array on a support. Two distinct layers of insulator material may surround the emitters. The lower layer of insulator material may be a non-conformally applied spray-on or spin-on insulator. The non-conformal insulator material may pool at the base regions of the emitters so that the tip regions of the emitters extend out of the lower layer of insulator material. The upper layer of insulator material is applied to the lower layer using a conformal process so that the tip regions of the emitters are covered by the upper layer of insulator material. Gate material is applied to the upper layer of insulator material. Holes are provided in the gate material over the tip regions and wells are provided in the upper layer of insulator material surrounding the tip regions.

Abstract: Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

Abstract: Diamond microtip field emitters are used in diode and triode vacuum microelectronic devices, sensors and displays. Diamond diode and triode devices having integral anode and grid structures can be fabricated. Ultra-sharp tips are formed on the emitters in a fabrication process in which diamond is deposited into mold cavities in a two-step deposition sequence. During deposition of the diamond, the carbon graphite content is carefully controlled to enhance emission performance. The tips or the emitters are treated by post-fabrication processes to further enhance performance.

Abstract: A method of fabricating a field emission array that employs a single mask to define the emitter tips thereof and their corresponding resistors. A layer of conductive material is disposed over a substrate of the field emission array. A plurality of substantially mutually parallel conductive lines is defined from the layer of conductive material. At least one layer of semiconductive material or conductive material is disposed over the conductive lines and over the regions of the substrate exposed between adjacent conductive lines. A mask material is disposed over the layer of semiconductive material or conductive material, substantially above each of the conductive lines. Portions of the layer of semiconductive material or conductive material exposed through the mask material may be removed to expose substantially longitudinal center portions of the conductive lines. Other portions of the layer of semiconductive material or conductive material may remain over peripheral lateral edges of the conductive lines.

Abstract: An electron emission device can be driven with a low voltage and has an excellent mass production capability. A display device, such as a color flat panel or the like, which uses such electron emission devices has an excellent display quality. The electron emission device includes a first electrode, on which a plurality of fine particles of an electron emission body obtained by terminating carbon bodies formed on metal fine particles, serving as nuclei, with a low-work-function material via oxygen are partially arranged, on a first substrate, and a second electrode where a voltage for drawing electrons from the electron emission body into a vacuum is applied. A metal of the metal fine particles is a catalytic metal. The catalytic metal is an iron-family element, such as Ni, Co, Fe or the like, or a platinum-family element, such as Pd, Ir or Pt. The carbon bodies are made of graphite. The low-work-function material is an alkaline metal or an alkaline earth metal.