Abstract: In an embodiment, a system includes: a pad comprising a first side and a second side opposite the first side, wherein the first side is configured to receive a wafer during chemical mechanical planarization (CMP), and a platen adjacent the pad along the second side, wherein the platen comprises a suction opening that interfaces with the second side; a pump configured to produce suction at the suction opening to adhere the second side to the platen; and a sensor configured to collect sensor data characterizing a uniformity of adherence between the pad and the platen, wherein the pump is configured to produce the suction at the suction opening based on the sensor data.

Abstract: An article includes a surface layer and a base layer coupled to at least a portion of the surface layer. The surface layer includes a top major surface defining a plane and a bottom major surface opposite the top major surface. A plurality of projections extends from the plane of the top major surface and a plurality of microstructures extend from the plurality of projections.

Abstract: A chemical mechanical polishing (CMP) apparatus and a CMP pad, the apparatus including a rotating plate; a CMP pad on an upper surface of the rotating plate; a rotating body facing the rotating plate and bringing a wafer into contact with the CMP pad to press the wafer; and a slurry supply configured to supply slurry to the CMP pad, wherein the CMP pad includes a pad body having a circular plate shape; a plurality of circular grooves on a bottom surface of the pad body, the plurality of circular grooves having a circular shape; and a connection groove connecting the plurality of circular grooves, the connection groove having a linear shape.

Abstract: Tooling is provided for mounting to a tooling plate to remove stock material from a surface based on rotation of the tooling plate about an axis. The tooling includes a backing plate and a plurality of segments. Each segment includes a bond and diamonds. The plurality of segments are secured to the backing plate such that a spacing is provided between the plurality of segments in a circumferential direction defined by an arc from a first side to a second side of the backing plate and/or a radial direction orthogonal to the circumferential direction. A method is also provided for removing stock material from a surface using the tooling.

Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.

Abstract: A ballistic resistant fastener having a ballistic resistant face plate includes a plurality of layers of aramid synthetic fibers or carbon nanotubes, a plug body having a threaded body bore extending into the body, a helical thread insert within the plug body, a bolt engaging the helical thread insert, and a bottom cup having a cup sidewall attached to the body.

Abstract: The present invention provides a lapping plate, which provides a high lapping rate and also can suppress the generation of scratches on a surface of a polishing workpiece. The present invention provides a resin lapping plate comprising a resin sheet comprising a thermosetting polyurethane resin and having an opening rate of 10 to 50% and a Young's modulus of 7.0×107 to 5.0×108 N/m2.

Abstract: A lapping platen having a working surface and an abrasive coating on the working surface. The abrasive coating comprises a plurality of individual abrasive composites adhered to the working surface with an epoxy, the abrasive composites comprising diamond particles and a ceramic matrix. The diamond particles have an average particle size of 0.1 micrometers to 3 micrometers with no particle larger than 6 micrometers. The abrasive composites have an average particle size of 15 micrometers to 100 micrometers with no particle larger than 150 micrometers.

Abstract: The present invention relates to a segment-type chemical mechanical polishing conditioner and a method for manufacturing thereof. The segment-type chemical mechanical polishing conditioner comprises: a bottom substrate having a center protrusion; an abrasive unit binding layer disposed on the outside of the surface of the bottom substrate; and a plurality of abrasive units placed on the abrasive unit binding layer; wherein the abrasive units have a fan-shaped contour and are arrange along the center protrusion of the bottom substrate to form a discontinuous circular contour. Therefore, the present invention can utilize the center protrusion of the bottom substrate to adjust the arrangements of the abrasive units, and effectively improve the problem of thermal deformation of the surface of the chemical mechanical polishing conditioner during heat-hardening process, thereby enhancing the surface flatness of chemical mechanical polishing conditioner.

Abstract: Methods and apparatus for forming a semi-spherical polishing pad for polishing semiconductor surfaces, provide for: placing a polishing pad pre-form on a dome-shaped forming surface, the polishing pad pre-form including a circular body having a center and an outer peripheral edge, and a plurality of slots extending from the outer peripheral edge towards the center; disposing a bladder opposite to the dome-shaped forming surface and the polishing pad pre-form; inflating the bladder with a fluid such that the dome-shaped forming surface of the bonnet form presses against the polishing pad pre-form from one side and the bladder presses against the polishing pad pre-form from an opposite side; and maintaining the pressing step for a predetermined period of time to achieve the semi-spherical polishing pad.

Abstract: An abrasive article for polishing a substrate surface. The abrasive article includes a holder pad assembly and an abrasive member held in place with respect to a holder pad. The abrasive member further includes a first surface engaged with the holder pad assembly, and a second surface including an abrasive. A preload mechanism is positioned to bias the second surfaces of the abrasive member toward the substrate surface. One or more fluid bearing features on the second surface of the abrasive member is configured to generate lift forces during relative motion between the abrasive article and the substrate surface.

Abstract: Polishing pads with apertures are described. Methods of fabricating polishing pads with apertures are also described.

Abstract: An inexpensive rotary grinding tool with reduced noise level of the grinding is provided. The rotary grinding tool comprises a metal disk having a grinding surface on at least a part of its surface and a holder for supporting the metal disk. The grinding surface has hard grains having a Mohs hardness in excess of 9 brazed thereon at a surface density of at least 20 grains/cm2. The holder has at its center a securing means for securing the holder on rotary shaft of a rotary drive unit. The holder and the metal disk are joined together to constitute the rotary grinding tool.

Abstract: An abrasive article having an array of abrasive members with an elastomeric support that permits each abrasive member to move independently in at least pitch and roll. Each abrasive member maintains a fluid bearing (air is the typical fluid) with the substrate. The abrasive members are capable of selectively engaging with nanometer-scale and/or micrometer-scale height variations and micrometer-scale and/or millimeter-scale wavelengths of waviness, on the surfaces of substrates. The spacing and pitch of the abrasive members can be adjusted to follow the topography of the substrate to remove a generally uniform layer of material; to engage with the peaks on the substrate to remove target wavelengths of waviness; and/or to remove debris and contamination from the surface of the substrate.

Abstract: Homogeneous polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating homogeneous polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described.

Abstract: A polishing head for use in a polishing machine for optical surfaces, having an axis of rotation and a base body having a holding structure intended to be arranged at a polishing spindle and having a transport element intended to be held at a tool change arm, the transport element being positionable against a holding element of the tool change arm in order to perform a tool change, wherein at least one locking element is provided which can be positioned against the tool change arm such that a positive and/or non-positive joint results.

Abstract: Polishing pads with foundation layers and polishing surface layers are described. In an example, a polishing pad for polishing a substrate includes a foundation layer. A polishing surface layer is bonded to the foundation layer. Methods of fabricating polishing pads with a polishing surface layer bonded to a foundation layer are also described.

Abstract: The present invention relates to an abrasive tool, of the type suitable to be mounted on a machine tool, comprising at least a bearing structure with abrasive material, the said bearing structure being provided with at least a grid (6) with abrasive material, the grid (6) partially protruding or emerging from a body (7) without abrasive material.

Abstract: The present invention provides a polishing pad which can improve qualities of an object to be polished by improving the flatness of the object. A polishing surface 1a of a polishing pad 1 is subjected to a mechanical process, such as buffing, so that the flatness of the surface is improved, and corrugations on the polishing surface have a cycle of 5 mm-200 mm and a largest amplitude of 40 ?m or less. As a result, the flatness of the object polished by the polishing pad 1, such as a silicon wafer, is improved.

Abstract: The invention relates to a device for the double-sided processing of flat work pieces, comprising an upper working disc and a lower working disc, wherein the working discs between the working surfaces thereof facing each other, form a working gap for processing the work pieces, and wherein at least one of the working discs comprises a plurality of bores extending through the working surface for feeding a liquid working medium into the working gap, wherein the bores are combined in several groups, wherein each group of bores is connected to a separate pressurized supply line for the working medium, and at least one pressure control apparatus is provided, which makes it possible to control the pressure of the working medium in the supply lines separately from one another.

Abstract: A polishing disc for a tool for the fine machining of optically active surfaces, particularly on spectacle lenses as workpieces, comprises a main body which has a center axis and on which there is fixed an intermediate layer which is softer than the main body and on which a polishing agent carrier rests. The intermediate layer has, with respect to the center axis, a radial inner region of substantially constant axial thickness and an adjoining radial outer region. The latter is formed or is fixed to the main body in a particular way so as to prevent the edge of the polishing disc from being imprinted on the machined surface of the workpiece in the form of very fine, scratch-like microstructures. Also proposed is a simple method which can be used to produce such a polishing disc.

Abstract: Polishing pads for use in chemical mechanical planarization (CMP) or polishing elements/surfaces of such pads are made from a combination of immiscible polymers, for example polyurethane and polyolefin. The polymers are selected on the basis of interfacial interaction, melt index and ratios of melt indices between the polymer phases—a matrix phase and a dispersed phase. By selecting the polymer system such that the two polymers are immiscible in one another and preferentially form separate domains, the dispersed phase can be removed when conditioning or polishing processes expose it. The melt index of individual polymers and the ratio of melt indices determines dispersability of a smaller phase into the matrix, hence the phase size.

Abstract: The invention provides a polishing pad for chemical-mechanical polishing comprising a polymeric material comprising two or more adjacent regions, wherein the regions have the same polymer formulation and the transition between the regions does not include a structurally distinct boundary. In a first embodiment, a first region and a second adjacent region have a first and second non-zero void volume, respectively, wherein the first void volume is less than the second void volume. In a second embodiment, a first non-porous region is adjacent to a second adjacent porous region, wherein the second region has an average pore size of about 50 ?m or less. In a third embodiment, at least two of an optically transmissive region, a first porous region, and an optional second porous region, are adjacent. The invention further provides methods of polishing a substrate comprising the use of the polishing pads and a method of producing the polishing pads.

Abstract: A rotatable abrasive lapper machine platen assembly is attached to a lapper machine frame. The assembly has at least: a) a circular-shaped rotatable horizontal platen having i) a front surface and ii) a back surface; b) the circular platen having a platen radius, a platen outer circumference and a platen outer periphery; c) the circular platen front surface having an outer annular planar portion where the platen outer annular planar portion extends radially to the circular platen outer circumference; and d) a flexible abrasive disk secured in conformable flat contact with the circular platen front surface outer annular planar portion wherein the abrasive disk is positioned concentric with the circular platen.

Abstract: A method and apparatus for extending a polishing article lifetime on a polishing tool with multiple platens is described. The apparatus includes an advanceable roll to roll platen with multiple embodiments of a polishing article to be used thereon. The polishing article is adapted to perform a polishing process by removing conductive and dielectric material from a substrate while minimizing downtime of the polishing tool. In some embodiments, the polishing article may be a dielectric material or a conductive material and is configured to include a longer usable lifetime to minimize replacement and downtime of the tool.

Abstract: A polishing apparatus is provided for polishing wafers at a high yield rate even if roll-off exists. The polishing apparatus polishes a wafer by applying a pressure between a polishing member (polishing pad) 201 and the wafer held by a holding member (top ring) 52 and moving the polishing member relative to the wafer. The polishing apparatus includes a top ring 52 for holding the wafer, a pressure adjusting mechanism for adjusting a supporting pressure with which the wafer is supported on a supporting surface by a retainer ring, and a control unit for controlling the pressure adjusting mechanism to bring the supporting pressure to a desired pressure based on a roll off quantity of the wafer. The top ring comprises an air bag 202 for pressing the wafer against the polishing pad, a retainer ring which surrounds the wafer, and an air bag for pressing the retainer ring.

Abstract: A chemical mechanical polishing pad and method for chemical-mechanical polishing is provided, wherein the polishing pad has a plurality of first mesas and one or more second mesas defined on a surface thereof. The plurality of first mesas are generally distributed about the surface of the polishing pad, wherein each of the plurality of first mesas has a first surface area associated therewith. The one or more second mesas are associated with a center region of the polishing pad, wherein each of the one or more second mesas has a second surface area associated therewith. The second surface area is at least twice the first surface area.

Abstract: A polishing pad includes a body having a polymer layer and a polishing layer. The polymer layer has opposite first and second faces. The polymer layer includes a plurality of first ultrafine fibers and a polymer bonding the first ultrafine fibers together. The polishing layer is formed on the first face of the polymer layer. The polishing layer includes a plurality of second ultrafine fibers and is free of the polymer. The first and second ultrafine fibers are identical to each other. The second ultrafine fibers have a first concentration of ultrafine fibers by volume higher than 80% a total volume of the polishing layer. The first ultrafine fibers of the polymer layer have a second concentration of ultrafine fibers by volume to a total volume of the polymer layer. The first concentration is higher than the second concentration.

Abstract: In one embodiment, a device to resurface a sealing surface of a fluid connector in a fluid delivery component is provided. The device may include a housing adapted to be reversibly coupled to the fluid connector. Included may be an arbor which is at least partially disposed in the housing, and both rotationally and axially movable within the housing. The arbor may have a first end proximal to the sealing surface and a second distal end adapted to receive rotational actuation. A resurfacing head may be positioned at the first end of the arbor, and may have a resurfacing face that includes a circular resurfacing groove adapted to fit a circular ridge on the sealing surface of the connector. Rotational contact between the groove and the ridge may cause the resurfacing of the sealing surface. The housing may keep the resurfacing head and the sealing surface aligned during the resurfacing.

Abstract: A chemical mechanical polishing pad manufacturing assembly is provided having a subpad layer having a top surface and a bottom surface; a backing plate having a top side and a bottom side; a sacrificial layer having at least two recessed areas designed to facilitate attachment of a subpad layer to the backing plate; wherein the subpad layer is disposed on the top side of the backing plate and the sacrificial layer is disposed on the bottom side of the backing plate, and wherein the at least two wrap around tabs extend to the bottom side of the backing plate. Also provide is a method of manufacturing a chemical mechanical polishing pad using the chemical mechanical polishing pad manufacturing assembly.

Abstract: Chemical mechanical planarization apparatuses with polishing assemblies that provide for the passive removal of slurry are provided. In accordance with an embodiment, a work piece polishing assembly comprises a polishing pad comprising a polishing surface and an exhaust aperture that extends through the polishing pad from the polishing surface and is configured to receive a slurry from the polishing surface. An underlying member is disposed underlying the polishing pad and comprises a peripheral surface. The underlying member comprises a channel that is in fluid communication with the aperture and that opens at the peripheral surface of the underlying member.

Abstract: A mechanical device including: (a) a metal workpiece having a working surface for bearing a load, the working surface including a nanometric, adhesive, solid film containing carbon atoms, the film being intimately bonded to the workpiece, wherein the film is intimately bonded to the workpiece on one face of the film, and wherein an opposing face of the film is exposed, for contacting with a lubricant, (b) a contact surface, disposed substantially opposite the working surface; (c) a lubricant, disposed between the working surface and the contact surface, and (d) a mechanism for causing a relative movement between the working surface and the contact surface.

Abstract: The disclosed invention is directed to an improved polishing system that can attain improved values in surface topography, and in particular, improved surface planarity of a polished substrate. The system can prevent the formation of deformities at the polishing surface of the system. The system includes openings that are adjacent certain layers of the system. In particular, the system includes openings, such as channels, for example, formed adjacent to an adhesive layer in the system. Thus, as gases, e.g., air, are released from the semi-solid adhesive during operation of the system, the gases can be trapped, dissipated, or vented by the openings rather than form pressure points in the system that can lead to surface deformations on the polishing surface.

Abstract: A chemical-mechanical polishing apparatus is provided that creates a uniform kinematical pattern on the surface of a wafer being polished. The apparatus may have a polishing pad comprising a polishing pad surface having a center point that lies within an axis of motion for the polishing pad and a plurality of grooves entrenched in the polishing pad surface and defining a pattern of shapes. The pattern has an axis of symmetry that is offset from the polishing pad surface center point. The apparatus may be operated in a manner such that the kinematics of the CMP process are uniform across the surface of the wafer.

Abstract: A viscoelastic polisher to be used for polishing. The viscoelastic polisher includes a viscoelastic layer provided on a major surface of a base disk and having a hole of a predetermined radius formed in a center portion thereof, and the base disk has a plurality of grooves equiangularly provided in the major surface thereof as extending radially outward from a center portion thereof. This arrangement ensures stable supply of an abrasive liquid, and obviates a need for formation of grooves in the viscoelastic layer.

Abstract: A method of processing an antifriction bearing unit for a wheel, the antifriction bearing unit including an outer race, an inner race, a plurality of rolling elements and a flange portion for directly or indirectly mounting a brake disk provided to one of the outer and inner races, the method includes: assembling the outer and inner races and the rolling element together; after assembling, placing the one of the outer and inner race in position incapably of circumferential rotation; grinding the flange portion by bring the flange portion into contact with a grindstone which is rotated while the other of the outer and inner race is left free.

Abstract: The present invention provides a polishing pad which imparts excellent planarity and uniformity thereof to a material to be polished, such as a semiconductor wafer, without forming scratches. The present invention relates to a semiconductor wafer polishing pad comprising a polishing layer and a cushion layer, wherein the polishing layer is formed from foamed polyurethane, has a flexural modulus of 250 to 350 MPa, the cushion layer is formed from closed-cell foam and has a thickness of 0.5 to 1.0 mm and a strain constant of 0.01 to 0.08 ?m/(gf/cm2).

Abstract: An object is to provide a polishing carrier that can prevent scratches from occurring on the edge face of a substrate, and prevent debris from being produced from the edge face, while a single crystal silicon substrate, which is fragile, and has a high cleavage strength, is polished, and to make it difficult for debris to be produced due to rubbing against a cassette when it is stored in a cassette in subsequent processing, and prevent the substrate from being broken. Therefore a part of the internal circumference of a substrate holding hole in a polishing carrier, that makes contact with the silicon substrate is formed from a cushion whose hardness is less than that of the silicon substrate. For the cushion, any type selected from for example suede, polyamide resin, polypropylene resin, or epoxy resin may be used. Especially, the use of epoxy resin is desirable.

Abstract: A polishing wheel including a lower polishing surface and defining a different color from a secondary portion of the polishing wheel, so as to indicate wear of the polishing surface. The polishing surface includes a plurality of main radial flutes extending from a central passage to an outer edge. A reduced profile for the main radial flutes is provided adjacent to the outer edge. A plurality of secondary radial flutes is provided extending from the outer edge, but not in communication with either the central passage or the main radial flutes. The reduced profile for the main radial flute is defined by a variable depth portion. The secondary radial flutes defined by a variable depth portion. Each of the main radial flutes and the secondary radial flutes formed by a circular saw. An indexing machine is used to move the polishing wheel during the forming process.

Abstract: A window polishing pad having a reduced stress pad window formed therein for performing optical end point detection are provided, wherein the window polishing pad comprises a pad window and a pressure relief channel, wherein the pressure relief channel extends to an outer periphery of the window polishing pad from a cavity formed behind the pad window when the window polishing pad is interfaced with a platen and wherein a membrane is provided over at least one of an inlet and an outlet of the pressure relief channel. Also disclosed are methods of making and of using the window polishing pads to polish a semiconductor wafer.

Abstract: A chemical mechanical polishing pad and method for chemical-mechanical polishing is provided, wherein the polishing pad has a plurality of first mesas and one or more second mesas defined on a surface thereof. The plurality of first mesas are generally distributed about the surface of the polishing pad, wherein each of the plurality of first mesas has a first surface area associated therewith. The one or more second mesas are associated with a center region of the polishing pad, wherein each of the one or more second mesas has a second surface area associated therewith. The second surface area is at least twice the first surface area.

Abstract: A polishing pad for chemically mechanically polishing a semiconductor wafer comprises a first groove pattern circularly formed on the surface of the polishing pad, and a second groove pattern formed on the surface of the polishing pad while spirally extending from the circular center of the polishing pad to the outside so as to overlap the first groove pattern. The polishing pad further comprises a third groove pattern formed on the surface of the polishing pad while radially extending from the circular center of the polishing pad to the outside so as to overlap the first and second groove patterns. A chemical mechanical polishing apparatus comprises the polishing pad. The polishing pad of the chemical mechanical polishing apparatus has enhanced groove patterns formed on the polishing pad to provide uniform distribution of the slurry, thereby enhancing polishing speed and polishing uniformity.

Abstract: A chemical mechanical polishing pad which has a storage elastic modulus E?(30° C.) at 30° C. of 120 MPa or less and an (E?(30° C.)/E?(60° C.)) ratio of the storage elastic modulus E?(30° C.) at 30° C. to the storage elastic modulus E?(60° C.) at 60° C. of 2.5 or more when the storage elastic moduli of a polishing substrate at 30° C. and 60° C. are measured under the following conditions: initial load: 100 g maximum bias: 0.01 % frequency: 0.2 Hz. A chemical mechanical polishing process makes use of the above chemical mechanical polishing pad. The chemical mechanical polishing pad can suppress the production of a scratch on the polished surface in the chemical mechanical polishing step and can provide a high-quality polished surface, and the chemical mechanical polishing process provides a high-quality polished surface by using the chemical mechanical polishing pad.

Abstract: A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. A polishing station includes a platen, a vibration damper mounted on the platen and a substrate polishing pad mounted on the vibration damper. The vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

Abstract: A polishing pad (20) for polishing a wafer (32) or other article, the pad having a groove network (60) configured to increase the residence time polishing medium (46) on the pad. The groove network has a first portion (72) that may extend substantially radially outwardly and an oscillating portion (74) that begins at a transition point (76) and is configured to slow the radially outward flow of the polishing medium.

Abstract: A polishing pad for a chemical mechanical polishing has a body rotatable in a predetermined direction and having a working surface, the working surface being provided with grooves, the grooves being formed so that over the course of a single revolution of the pad said grooves extend in all directions in the plane of the working surface. Such an arrangement of grooves is the optimum configuration for CMP, especially copper CMP.

Abstract: Double-sided polishing equipment configured to polish a rectangular substrate, comprising a carrier having a pocket configured to accommodate a rectangular substrate, a lateral linear moving mechanism configured to move the carrier, first and second polishing pads with first and second rotational axes, respectively, offset from centers of the pads, the polishing surfaces of the first and second polishing pads being parallel. The equipment further includes at least one elevating mechanism coupled to at least one of the polishing pads, first and second rotary drive mechanisms coupled to each of the first and second polishing pads, respectively; and configured to rotate the first and second pads about the first and second rotational axes. A polishing-agent supplying device is present and configured to supply polishing agent to a plane where a substrate that is accommodated in the pocket to accommodate the substrate comes into contact with the polishing pads.

Abstract: Methods and apparatuses for planarizing a microelectronic substrate. In one aspect of the invention, a first portion of an energy-sensitive, non-sacrificial planarizing pad material is exposed to a selected energy without exposing a second portion of the material to the selected energy source. The planarizing pad material is exposed to a solvent to remove material from one of the first or second portions of the planarizing pad material at a faster rate than removing material from the other of the first and second portions. The process forms a plurality of recesses directly in the surface of the planarizing pad which are configured to support a planarizing liquid proximate to the surface of the planarizing pad material during planarization of the microelectronic substrate. Alternatively, the process can form a mold having protrusions that are pressed into the planarizing pad to define the recesses in the pad.

Abstract: Methods and apparatuses for analyzing and controlling performance parameters in planarization of microelectronic substrates. In one embodiment, a planarizing machine for mechanical or chemical-mechanical planarization includes a table, a planarizing pad on the table, a carrier assembly, and an array of force sensors embedded in at least one of the planarizing pad, a sub-pad under the planarizing pad, or the table. The force sensor array can include shear and/or normal force sensors, and can be configured in a grid pattern, concentric pattern, radial pattern, or a combination thereof.

Abstract: There is disclosed a polishing cloth having an abrasive layer containing a polymer material which is a hydrolyzable with an aqueous medium and being capable of exhibiting a stable polishing performance for a relatively long period of time without necessitating a dressing treatment.