Abstract: Provided is a method, device, and program for determining a timing of removing a substrate from a cassette in substrate processing device, and substrate processing device. In the method, a tentative removal time point of each substrate is calculated by adding a transfer time to a tentative removal time point of the one previous substrate, wherein the transfer time is required from the start of an action of removing a substrate from the cassette to the end of an action of delivering the substrate to an exchanger.

Abstract: There is provided a wet etching method including an etchant supply step of supplying an etchant from an etchant supply nozzle to a to-be-etched surface of a workpiece, an etching step of etching the to-be-etched surface with the etchant remaining on the to-be-etched surface, and an etchant removal step of, after performing the etching step, removing the etchant, which still remains on the resulting etched surface, from the etched surface. The etchant supply step, the etching step, and the etchant removal step are repeated a plurality of times in this order.

Abstract: Devised are a supporting substrate capable of contributing to an increase in density of a semiconductor package and a laminate using the supporting substrate. A supporting glass substrate of the present invention includes a polished surface on a surface thereof and has a total thickness variation of less than 2.0 ?m.

Abstract: A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier laterally movable by an actuator across the polishing pad to hold a substrate against a polishing surface of the polishing pad during a polishing process, a thermal control system including a plurality of independently controllable heaters and coolers to independently control temperatures of a plurality of zones on the polishing pad, and a controller configured to cause the thermal control system to generate a first zone having a first temperature and a second zone having a different second temperature on the polishing pad.

Abstract: A chemical-mechanical polishing (CMP) system includes a head, a polishing pad, and a magnetic system. The slurry used in the CMP process contains magnetizable abrasives. Application and control of a magnetic field, by the magnetic system, allows precise control over how the magnetizable abrasives in the slurry may be drawn toward the wafer or toward the polishing pad.

Abstract: In a method for coating on a surface of a medical PEEK material with titanium to have a microporous structure, titanium is coated on a surface of polyether ether ketone (PEEK) via magnetron sputtering. The surface of the titanium coated on the surface of PEEK is polished via an electromagnetic polishing apparatus. A thin-film with titanium dioxide (TiO2) having a microporous structure is formed on the polished surface of the titanium via an anodic oxidation treatment.

Abstract: A polishing apparatus includes a holding table having a holding surface that holds a wafer, a polishing unit in which a polishing pad having an opening at the center of a polishing surface that polishes the wafer is mounted to a spindle and is rotated, a slurry supply unit that supplies slurry to the polishing surface of the polishing pad, and an air supply unit that shuts an upper end of a penetrating path penetrating through the axial center of rotation of the polishing pad and the spindle and supplies air into the penetrating path.

Abstract: Certain aspects of the present disclosure provide techniques for a method of removing material on a substrate. An exemplary method includes rotating a substrate about a first axis in a first direction and urging a surface of the substrate against a polishing surface of a polishing pad while rotating the substrate, wherein rotating the substrate about the first axis includes rotating the substrate a first angle at a first rotation rate, and then rotating the substrate a second angle at a second rotation rate, and the first rotation rate is different from the second rotation rate.

Abstract: The present disclosure provides a composition for manufacturing a polyurethane polishing pad. The composition includes 15 to 25 wt % of MBCA, 25 to 45 wt % of isocyanates, 15 to 45 wt % of polyols, 5 to 35 wt % of EOPO, and 1 to 5 wt % of additives. The polyurethane polishing pad made from the composition of the present disclosure has a hardness within a range of 40 to 70 shore D, an elongation within a range of 200 to 400%, a density within a range of 0.7 to 0.9 g/cc, a modulus within a range of 25000 to 40000 kg/cm2, and a tensile stress within a range of 120 to 320 kg/cm2.

Abstract: A chemical-mechanical polishing method includes placing a wafer onto a top side of a polish pad disposed on a platen; introducing a slurry through at least one first hole of the platen to the top side of the polish pad; polishing the wafer with the top side of the polish pad; introducing a gas through a second hole of the platen to the top side of the polish pad after polishing the wafer, wherein an opening diameter of the at least one first hole is greater than an opening diameter of the second hole; and moving the wafer away from the polish pad while introducing the gas is being performed.

Abstract: Provided an inspection method for a rotating electric machine, including: a first step of acquiring a first image by imaging a pattern formed on an outer peripheral surface of a retaining ring over an entire circumference of the retaining ring with use of an image pickup element mounted to a non-rotating portion of the rotating electric machine under a state in which the retaining ring is rotated; a second step of acquiring a second image by imaging the pattern over the entire circumference of the retaining ring with use of the image pickup element under the state in which the retaining ring is rotated, the second step being executed after the first step with an operation of the rotating electric machine interposed; and a third step of acquiring a distortion distribution of the retaining ring based on the first image and the second image.

Abstract: Provided is a liquid sensor capable of relatively accurately detecting the liquid level even if vibration or the like occurs. The liquid sensor is configured to detect a liquid level in a state in which at least a portion of the liquid sensor is immersed in liquid. This liquid sensor includes a substrate. The substrate is provided with a hole. An inner circumferential surface of the substrate is formed around the hole. A first electrode and a second electrode facing the first electrode are formed on the inner circumferential surface. The liquid sensor further includes a detection circuit. The detection circuit is configured to detect capacitance between the first and second electrodes.

Abstract: Disclosed herein are systems and methods related to a handling system used to move a semiconductor substrate within a process chamber during treatment. The handling system moves the substrate back-and-forth between two locations in an arc-like motion around a pivot point, while simultaneously rotating the substrate around its own center point.

Abstract: A method and apparatus for preparing a sample material includes comminuting the sample material in a comminuting device, supplying the sample material to a press to press the sample material, wherein the sample material is received on a press ram of the press, and generating a magnetic field and magnetizing iron particles contained in the sample material with a magnet, such that the iron particles accumulate in a region within the sample material facing toward the magnet.

Abstract: A polishing delivery apparatus, configured to provide slurry and rinse agent to a polishing pad, includes a delivery arm, at least one first nozzle, and at least one second nozzle. The delivery arm is rotatably connected to the polishing pad and has an arc-shaped top surface facing away from the polishing pad, a bottom surface facing away from the arc-shaped top surface, and a recess indenting from the bottom surface. The first nozzle is mounted on the bottom surface of the delivery arm and has a first nozzle head facing toward the polishing pad. The second nozzle is mounted in the recess of the delivery arm and has three second nozzle heads, in which one of the three second nozzle heads faces toward the polishing pad, and the other two of the three second nozzle heads face toward sidewalls of the recess.

Abstract: According to the present invention, there is provided a slurry supply system including: a slurry mixing unit configured to mix slurry; a slurry supply unit in which the slurry mixed in the slurry mixing unit is stored and configured to supply the slurry to a polishing apparatus; a pipe configured to connect the slurry mixing unit and the slurry supply unit; and a slurry cooling unit installed in at least one of pipes configured to connect the slurry supply unit and the polishing apparatus to cool down the mixed slurry.

Abstract: An apparatus of supplying slurry for a planarization process includes a housing having a first side and a second side and channels extending through the housing from the first side to the second side along a first direction. The channels include a first channel connecting a first inlet on the first side and a first outlet on the second side, a second channel connecting a second outlet on the first side and a second inlet on the second side, a third channel connecting a third inlet on the first side and a third outlet on the second side, and a fourth channel connecting a fourth outlet on the first side and a fourth inlet on the second side. An intermediate portion of the second channel crisscrosses an intermediate portion of the third channel along a second direction crossing the first direction.

Abstract: A slurry dispensing unit for a chemical mechanical polishing (CMP) apparatus is provided. The slurry dispensing unit includes a nozzle, a mixer, a first fluid source, and a second fluid source. The nozzle is configured to dispense a slurry. The mixer is disposed upstream of the nozzle. The first fluid source is connected to the mixer through a first pipe and configured to provide a first fluid including a first component of the slurry. The second fluid source is connected to the mixer through a second pipe and configured to provide a second fluid including a second component of the slurry, wherein the second component is different from the first component.

Abstract: A system controls a flow of a chemical mechanical polish (CMP) slurry into a chamber to form a slurry reservoir within the chamber. Once the slurry reservoir has been formed within the chamber, the system moves a polishing head to position and force a surface of a wafer that is attached to the polishing head into contact with a polishing pad attached to a platen within the chamber. A wafer/pad interface is formed at the surface of the wafer forced into contact with the polishing pad and the wafer/pad interface is disposed below an upper surface of the slurry reservoir. During CMP processing, the system controls one or more of a level, a force, and a rotation of the platen, a position, a force and a rotation of the polishing head to conduct the CMP processing of the surface of the wafer at the wafer/pad interface.

Abstract: A method of manufacturing a device includes exposing at least one of a source/drain contact plug or a gate contact plug to a metal ion source solution during a manufacturing process, wherein a constituent metal of a metal ion in the metal ion source solution and the at least one source/drain contact plug or gate contact plug is the same. If the source/drain contact plug or the gate contact plug is formed of cobalt, the metal ion source solution includes a cobalt ion source solution. If the source/drain contact plug or the gate contact plug is formed of tungsten, the metal ion source solution includes a tungsten ion source solution.

Abstract: A magnetic-disk glass substrate of the present invention has an average value of squares of inclinations of 0.0025 or less and a frequency at which squares of inclinations are 0.004 or more of 15% or less, in a case where samples of inclinations on a main surface are obtained at intervals of 10 nm.

Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.

Abstract: Systems and methods are provided for performing chemical-mechanical planarization. An example system includes: a polishing head, a polishing pad, a slurry distribution component, and a reactant distribution component. The polishing head is configured to perform chemical-mechanical planarization on an article. The polishing pad is configured to support the article. The slurry distribution component is configured to provide a slurry on the polishing pad. The reactant distribution component is configured to provide an oxidizer material on the polishing pad to generate a plurality of radicals to react with the article.

Abstract: A method for breaking up Chemical Mechanical Polishing (CMP) slurry particles includes receiving a CMP slurry comprising particles suspended in a solution, placing the slurry into a first agitation tank, and agitating the slurry at a first frequency. The first frequency is selected to break up particles having a size within a specified range.

Abstract: A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

Abstract: A polishing head for a chemical-mechanical polishing system includes a carrier head, at least one electromagnetism actuated pressure sector and a membrane. The electromagnetism actuated pressure sector is disposed on the carrier head. The membrane covers the electromagnetism actuated pressure sector.

Abstract: The present disclosure relates to a slurry distribution system having a distribution tube connected between a mixing tank and a CMP tool. The mixing tank is configured to generate a polishing mixture comprising a diluted slurry having abrasive particles that enable mechanical polishing of a workpiece. The polishing mixture is transported between the mixing tank and a CMP tool by way of a transport piping. An energy source, in communication with the transport piping, transfers energy to the abrasive particles within the polishing mixture, thereby preventing accumulation of the abrasive particles within the transport piping.

Abstract: Various embodiments of a semiconductor processing fluid delivery system and a method delivering a semiconductor processing fluid are provided. In aspect, a system for delivering a liquid for performing a process is provided that includes a first flow controller that has a first fluid input coupled to a first source of fluid and a second flow controller that has a second fluid input coupled to a second source of fluid. A controller is provided for generating an output signal to and thereby controlling discharges from the first and second flow controllers. A variable resistor is coupled between an output of the controller and an input of the second flow controller whereby the output signal of the controller and the resistance of the variable resistor may be selected to selectively control discharge of fluid from the first and second flow controllers.

Abstract: A device for cleaning a fixed abrasive polishing pad includes a main body having a surface facing the polishing pad, an inlet coupled to an end of the main body and configured to supply a cleaning liquid, an inject orifice coupled to the inlet for injecting the cleaning liquid and being provided on the surface of the main body, an outlet coupled to the end of the main body, and a recycle orifice coupled to the outlet, and being provided on the surface of the main body.

Abstract: A wet sanding adjuvant is comprised of a composition comprising: (1) an alkali metal or ammonium salt of an alkoxylated alkyl sulfate; (2) an alkali metal or ammonium salt of an alphaolefin sulfonate; (3) a cellulose derivative selected from the group consisting of hydroxyalkyl cellulose, a carboxyalkyl cellulose and combinations thereof. The adjuvant is used in a method of removing a coating from a surface comprising the steps of: (1) contacting a coated surface with a composition according to the invention to form a wet surface on the coating; (2) abrading the wet surface with an abrasive; (3) removing the composition from the surface.

Abstract: An apparatus for reclaiming abrasive blasting material comprises a prime mover, a vacuum pump and a separator unit for separating the abrasive blasting material in the contaminated abrasive blasting material from contaminants. The vacuum pick-up draws the contaminated abrasive blasting material. The separator unit includes a screening device for separating and reclaiming the abrasive blasting material. The screening device comprises a support member having a longitudinal axis and a transverse axis, and an endless flexible screen belt mounted to the support member so as to be movable along an endless closed loop in the direction of the longitudinal axis. The screen belt has a plurality of openings being sized to allow particles of the abrasive blasting material of a desired size to fall therethrough by gravity and to prevent the contaminants larger than the abrasive blasting material from falling therethrough.

Abstract: To propose a method for realizing appropriate delivering of works to carriers in the conventional transfer process. Specifically, in a polishing method for polishing a work retained in a carrier, at least one carrier for retaining a work to be polished is placed between an upper plate and a lower plate; the work is fit in a hole of the carrier; the carrier and the work are inserted between the upper plate and the lower plate; and at least one of the upper plate and the lower plate is rotated while supplying a polishing agent to a space between the upper plate and the lower plate. In fitting the work in the hole of the carrier, an end portion of the work is held and the work is carried to a position above the lower plate; the work is positioned with respect to the hole of the carrier on the lower plate; and the work is released from the hold and guided by a guide to be slowly carried down toward the hole.

Abstract: A supplying system of adding gas into the polishing slurry and method thereof are described. The supplying system includes a slurry container, a gas-mixed container, an adjusting device, a first flow controller, and a second flow controller. The supplying system utilizes the adjusting device to mix the polishing slurry with gas for forming the gas-mixed polishing slurry. The supplying system of adding the gas into the polishing slurry and method thereof are capable of increasing the material removal rate of the surface of the substrate in order to improve the processing quality of the substrate.

Abstract: Disclosed is an apparatus for injecting slurry onto the polishing pad surface of a chemical mechanical polishing (CMP) tool. The disclosed apparatus includes a rectilinear shaped injector bottom, where multiple slots are created in the top surface of the injector bottom, allowing the injector bottom to flex and to conform to the polishing pad profile. CMP slurry or components thereof are introduced through one or more top surface openings, travel through the injector body, and exit through a slit or bottom surface opening. The slurry is spread into a thin film by the injector, and is introduced at the gap between the surface of the polishing pad and the wafer, along the leading edge of the wafer, in quantities small enough that all or most of the slurry is introduced between the wafer and the polishing pad.

Abstract: The present invention is a wafer polishing method including simultaneously polishing both surfaces of a wafer by pressing and rubbing the wafer, while holding the wafer with: a lower turn table having a flat polishing-upper-surface rotationally driven; an upper turn table having a flat polishing-lower-surface rotationally driven, the upper turn table being arranged with facing to the lower turn table; and a carrier having a wafer-holding hole for holding the wafer, wherein the polishing is performed while measuring a thickness of the wafer through a plurality of openings provided between a rotation center and an edge of the upper turn table or the lower turn table, and switching a polishing slurry with a polishing slurry having a different polishing rate during the polishing of the wafer. As a result, there is provided a wafer polishing method that can manufacture a wafer having a high flatness and a high smoothness at high productivity and high yield.

Abstract: There is provided a method of producing a substrate for magnetic recording media which is capable of efficiently removing alumina abrasive grains in the latter polishing step that have been stuck in the former polishing step during polishing of the substrate for magnetic recording media in which a NiP plating film has been formed on the surface of an Al alloy substrate, the method including: a rough polishing step for polishing the surface of a substrate for magnetic recording media, which is prepared by forming a NiP plating film on the surface of an Al alloy substrate, using a first grinder while supplying a polishing liquid containing alumina abrasive grains; and a finish polishing step for polishing the substrate for magnetic recording media following washing, using a second grinder while supplying a polishing liquid containing colloidal silica abrasive grains, wherein supply of the polishing liquid containing alumina abrasive grains is stopped and alumina abrasive grains are removed from the grinder b

Abstract: The invention provides a polishing composition containing a pyrrolidone polymer, an aminophosphonic acid, a tetraalkylammonium salt, and water, wherein the composition has a pH of about 7 to about 11.7. The invention further provides a method of using such a polishing composition to polish a substrate, especially a substrate containing silicon.

Abstract: Embodiments of the present invention pertain to reducing agglomeration of particles while manufacturing a lapping plate using an oil-based slurry. According to one embodiment, an oil-based slurry with particles of a known size is applied to a lapping plate. The oil-based slurry is ultrasonically mixed while applying the oil-based slurry to the lapping plate in order to reduce agglomeration of the particles.

Abstract: Shot blasting particles are constituted by a ceramic material having an apparent relative density of more than 4.0 and less than 5.0 and comprising more than 5% of silica, as a percentage by weight based on the oxides.

Abstract: An abrasive particle having an irregular surface, wherein the surface roughness of the particle is less than about 0.95. A method for producing modified abrasive particles, including providing a plurality of abrasive particles, providing a reactive coating on said particles, heating said coated particles; and recovering modified abrasive particles.

Abstract: In a method for multiple cutoff machining a rare earth magnet block, a cutting fluid feed nozzle having a plurality of slits is combined with a plurality of cutoff abrasive blades coaxially mounted on a rotating shaft, each said blade comprising a base disk and a peripheral cutting part. The slits in the feed nozzle into which the outer peripheral portions of cutoff abrasive blades are inserted serve to restrict any axial run-out of the cutoff abrasive blades during rotation. Cutting fluid is fed from the feed nozzle through slits to the rotating cutoff abrasive blades and eventually to points of cutoff machining on the magnet block.

Abstract: A chemical mechanical polishing (CMP) system includes a wafer polishing unit producing a used slurry; a slurry treatment system for receiving and treating the used slurry to thereby produce an extracted basic solution; and a post-CMP cleaning unit utilizing the extracted basic solution to wash a polished wafer surface. The post-CMP cleaning unit includes a plurality of rollers for supporting and rotating a wafer, a brush for scrubbing the wafer, and a spray bar disposed in proximity to the brush for spraying the extracted basic solution onto the polished wafer surface.

Abstract: In a certain embodiment, the invention comprises an apparatus for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising an injector the leading edge of which possess bays, depressions or notches that capture spent slurry and hold it long enough for it to transfer heat from the polishing reaction to the pad or through the injector to the new slurry before the said spent slurry is thrown from the polishing pad. The effect is to considerably improve the removal rate, reduce slurry consumption and reduce operating time.

Abstract: A system and a method of operating a chemical mechanical polishing (CMP) system comprises a slurry delivering unit configured for locally varying the supply of slurry while polishing the substrate. To this end, the slurry delivering unit may comprise at least one slurry outlet over a polishing pad of the CMP system, wherein the at least one slurry outlet is controllably movable to distribute slurry over the polishing pad.

Abstract: In a method for multiple cutoff machining a rare earth magnet block, a cutting fluid feed nozzle having a plurality of slits is combined with a plurality of cutoff abrasive blades coaxially mounted on a rotating shaft, each said blade comprising a base disk and a peripheral cutting part. The slits in the feed nozzle into which the outer peripheral portions of cutoff abrasive blades are inserted serve to restrict any axial run-out of the cutoff abrasive blades during rotation. Cutting fluid is fed from the feed nozzle through slits to the rotating cutoff abrasive blades and eventually to points of cutoff machining on the magnet block.

Abstract: A method is provided to remove a thickness of a sputter target surface deformation layer to thereby achieve a reduced burn-in time during sputtering operations. The method comprises extrusion hone polishing of the target surface with a visco-elastic abrasive medium.

Abstract: A method includes: charging a polishing material into a polishing apparatus that polishes a surface of a cylindrical film including a resin; alternately and repeatedly performing a surface-roughening operation of causing the polishing material to collide with the surface of the cylindrical film, thereby roughening the surface, and a cylindrical film replacing operation of replacing the cylindrical film on which roughening of the surface has been completed with another cylindrical film on which roughening of the surface has not been completed; replacing the polishing material by partially discharging the polishing material, and charging a new polishing material so that the percentage of the new polishing material with respect to the total amount of the polishing material after the new polishing material is charged becomes 30% by weight or more; and alternately and repeatedly performing the surface-roughening operation and the cylindrical film replacing operation again.

Abstract: Embodiments of the invention provide a slurry delivery and rinse system for a chemical mechanical polishing (CMP) apparatus which is capable of self-cleaning, and which can adjustably deliver the slurry agent and rinse agent over a polishing pad. In one embodiment, the fluid delivery system has a distributed slurry delivery arm (DSDA) which contains at least one manifold, usually two or more manifolds attached to the lower surface of the delivery arm. Each DSDA manifold contains a plurality of slurry nozzles disposed along the length of the manifold. The delivery arm also contains a plurality of high pressure rinse nozzles extending from the lower surface of the delivery arm and disposed along the length of the delivery arm, parallel to each DSDA manifold. In one example, the delivery arm contains two DSDA manifolds disposed parallel to each other and a plurality of high pressure rinse nozzles disposed between the manifolds.

Abstract: A slurry feed system suitable for chemical mechanical planarization (CMP) processes in a semiconductor fabrication facility and related method. The slurry feed system includes a valve manifold box having a discharge piping header fluidly connected to at least one CMP station and a first slurry supply train. The first slurry supply train may include a slurry mixing tank, day tank, and at least two slurry feed pumps arranged in series pumping relationship. The first slurry supply train defines a first slurry piping loop. In one embodiment, a second slurry supply train defining a second slurry piping loop is provided. The valve manifold box is operable to supply slurry from either or both of the first and second slurry piping loops to the CMP station.

Abstract: Common sources of different (e.g., concentrated) process materials are controllably supplied to multiple blending manifolds associated with multiple process tools, processing stations, or other points of use, to create an independently controllable process material blend for each tool, station, or point of use. Multi-constituent process materials may be circulated from a supply container through a blending manifold to a return container to ensure homogeneity until immediately prior to blending and use. Such containers may include liner-based containers adapted for pressure dispensation.