Abstract: The present disclosure relates to a circuit including an input terminal configured to receive a first signal at a first frequency; a demodulation chain connected to the input terminal and including a low-noise amplifier having an input coupled to the terminal; a controllable variable impedance connected between a first node and a node configured to receive a reference potential, the first node being connected to the input terminal and/or to the amplifier input; and a current source configured to deliver a current at the first frequency to the first node.

Abstract: A high-frequency switch includes an input interface configured to receive a high-frequency signal; an output interface configured to output the high-frequency signal to outside; and a reactance switch inserted between the input interface and the output interface. The reactance switch includes a plurality of reactance circuits connected in a cascade arrangement between the input interface and the output interface. Each of the plurality of reactance circuits is configured to form a common passband for the high-frequency signal based on a reactance of a respective predetermined values, and at least one of the reactance circuits is a variable reactance circuit having a reactance which changes in response to a control signal input from the outside so that the passband of the variable reactance circuit changes.

Abstract: The present invention is to provide a mixing circuit, comprising: a first transistor; a second transistor; a third transistor; a first connection point connected to a gate terminal of the first transistor, a drain terminal of the second transistor and a source terminal of the third transistor; a second connection point connected to a source terminal of the first transistor and a gate terminal of the second transistor; and a third connection point connected to a drain terminal of the first transistor and a drain terminal of the third transistor.

Abstract: A sensor includes a substrate, an electrode, a deformable membrane, and a compensating structure. The substrate includes a first side and a second side. The first side is opposite to the second side. The substrate comprises a cavity on the first side. The electrode is positioned at a bottom of the cavity on the first side of the substrate. The deformable membrane is positioned on the first side of the substrate. The deformable membrane encloses the cavity and deforms responsive to external stimuli. The compensation structure is connected to outer periphery of the deformable membrane. The compensation structure creates a bending force that is opposite to a bending force of the deformable membrane responsive to temperature changes and thermal coefficient mismatch.

Abstract: A method for calibrating an isolator product includes generating a differential pair of signals on a differential pair of nodes at an input of a demodulator circuit of a receiver signal path of a first integrated circuit die of the isolator product based on a received differential pair of signals. The method includes generating a diagnostic output signal having a level corresponding to an average amplitude of the differential pair of signals. The method includes driving the diagnostic output signal to an output terminal of the isolator product. The method may include transmitting a diagnostic signal using a carrier signal having a frequency by a second integrated circuit die via an isolation channel. The method may include, during the transmitting, sweeping the frequency of the carrier signal across a frequency band. The method may include, during the sweeping, capturing the diagnostic output signal via the output terminal.

Abstract: A power distribution assembly includes a printed circuit board (PCB) having a power input and electrical components connected to PCB conductive trace. A power bus extends from the PCB and has a conductive core, a dielectric layer on an exterior surface of the conductive core, a conductive trace on the dielectric layer, and a power cut through the dielectric layer to the conductive core. The conductive core is connected to the power input by way of the power cut through and the at least one second conductive trace is connected to the PCB conductive trace.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a first die and a conductive layer. The first die is to be bonded with, in a direction, a second die external to the semiconductor device. The conductive layer, between the first die and the second die in the direction, has a reference ground.

Abstract: Embodiments of the invention include a communication module that includes a die having a transceiver and a phase shifter die that is coupled to the die. The phase shifter includes a power combiner and splitter. The communication module also includes a substrate that is coupled to the phase shifter die. The substrate includes an antenna unit with steerable beam forming capability for transmitting and receiving communications.

Abstract: Embodiments of the present invention provide RFID systems having battery-assisted, Semi-Passive RFID tags that operate with sensitive transistor based square law tag receivers utilizing a plurality of tag receiver dynamic range states. Embodiments of the present invention are also enhanced with receiver training and synchronizing methods suited to the high tag sensitivity and need for dynamic range state switching. These enhancements may employ pseudo-random sequence based receiver training, activation signaling, and frame synchronizing. Further enhancement is achieved via design of system command sets and tag state machine behavior that control system interference and allow maximum usage of high sensitivity. Command set design also allows for convenient expansion to active transmitters and receivers in tags operating within the same system.

Abstract: An example embodiment of an active cascode circuit has a control circuit for control of the gate to source voltage (VGS) of at least one transistor in the active cascode circuit. The embodiment may be configured so that control of the VGS also controls the voltage Vin on the input. Vin may be adjusted without altering the device geometry or changing the drain current. This allows for better control and optimization of available headroom for the input voltage in low voltage designs and also results in higher active cascode circuit bandwidth and/or higher output impedance (Rout) for a given power level.

Abstract: A monolithically integrated circuit, particularly an integrated circuit for radio frequency power applications, may include a transistor and a spiral inductor. The spiral inductor is arranged above the transistor. An electromagnetic coupling is created between the transistor and the inductor. The transistor may have a finger type layout to prevent any significant eddy currents caused by the electromagnetic coupling from occurring. The chip area needed for the circuit may be reduced by such arrangement.

Abstract: An antenna module embeds front end circuitry with an antenna. Adaptive matching circuitry external to the antenna module is electrically connected between the embedded front end circuitry and the embedded antenna.

Abstract: A radio frequency (RF) receiver front end includes an RF attenuator for receiving an RF input signal and a low noise amplifier (LNA). In one form, the LNA provides a differential output signal and includes a first polarity amplifier and a plurality of second polarity amplifiers. The first polarity amplifier has an input terminal coupled to the output of the RF attenuator, an output terminal for providing a first component of the differential RF output signal, and has a first input impedance. Each of the plurality of second polarity amplifiers has an input terminal coupled to the output of said RF attenuator, and an output terminal. The output terminals of said plurality of second polarity amplifiers are coupled together and form a second component of the differential RF output signal. Each of the plurality of second polarity amplifiers has a second input impedance higher than the first input impedance.

Abstract: An integrated communications system. Comprising a substrate having a receiver disposed on the substrate for converting a received signal to an IF signal. Coupled to a VGA for low voltage applications and coupled to the receiver for processing the IF signal. The VGA includes a bank pair having a first bank of differential pairs of transistors and a second bank of differential pairs of transistors. The bank pair is cross-coupled in parallel, the IF signal is applied to the bank pair decoupled from a control signal used to control transconductance output gain of the bank pair over a range of input voltages. A digital IF demodulator is disposed on the substrate and coupled to the VGA for low voltage applications, for converting the IF signal to a demodulated baseband signal. And a transmitter is disposed on the substrate operating in cooperation with the receiver to establish a two way communications path.

Abstract: A high dynamic range precision variable amplitude controller includes a gain portion configured to apply a controllable amount of amplitude adjustment to an input signal. The gain portion includes two or more amplification stages each amplification stage having branches that are cross-coupled with branches of the other amplification stage. A control portion controls the current supply to the two or more amplification stages to control the amount of amplitude adjustment by the gain portion. The amplitude controller also includes a load portion that provides balanced impedances to the cross-coupled branches of the amplification stages throughout the amplitude control range.

Abstract: Disclosed is a semiconductor device including a semiconductor chip and a semiconductor package. The semiconductor package includes an antenna formed of a lead frame, a first wire that connects the antenna and a first electrode pad of the semiconductor chip, and a second wire that connects the antenna and a second electrode pad of the semiconductor chip. The semiconductor chip is disposed in one of four regions in the semiconductor package sectioned by line segments connecting midpoints of two pairs of opposing sides of the semiconductor package. A centroid of the semiconductor chip is positioned outside a closed curve composed of a straight line segment connecting a first connection point where the antenna and the first wire are connected and a second connection point where the antenna and the second wire are connected, and a line connecting the first and second connection points along the antenna.

Abstract: An object is to achieve low power consumption and a long lifetime of a semiconductor device having a wireless communication function. The object can be achieved in such a manner that a battery serving as a power supply source and a specific circuit are electrically connected to each other through a transistor in which a channel formation region is formed using an oxide semiconductor. The hydrogen concentration of the oxide semiconductor is lower than or equal to 5×1019 (atoms/cm3). Therefore, leakage current of the transistor can be reduced. As a result, power consumption of the semiconductor device in a standby state can be reduced. Further, the semiconductor device can have a long lifetime.

Abstract: Disclosed is a radio frequency signal receiving device, which includes a low-noise amplifier (LNA) and a mixer. The LNA includes a first inductor and a second inductor. The mixer has a first differential pair and a second differential pair, common ends of the first differential pair and the second differential pair are respectively coupled to the first differential output end and the second differential output end. The first inductor and the second inductor are serially connected between the first differential output end and the second differential output end of the LNA, so as to reduce power consumption and reach suitable frequency response. The first inductor and the second inductor generate a resonance effect with parasitic capacitance on the mixer, so as to effectively reduce flicker noises, and improve a working benefit of the radio frequency signal receiving device.

Abstract: A communications radio or transceiver having an extended upper operating frequency limit of at least 6 GHz. The radio includes a first IF conversion stage for receiving and downconverting a RF input signal to a first IF signal, and a second IF conversion stage for downconverting the first IF signal to a second IF signal. The first and the second conversion stages each have adjustable first and second attenuators, a serial peripheral interface (SPI) for controlling the attenuators in response to command words, a mixer coupled to an output of the second attenuator, and a buffer for applying a local oscillator (LO) signal to an input of the mixer. Each conversion stage is in the form of an integrated circuit chip. Component devices of each chip and electrical connections between the components, are dimensioned so that the chip has a 6 GHz upper frequency limit.

Abstract: In a high frequency antenna switch module, an I/O interface generates various control signals for controlling a switch module on the basis of a system data signal and a system clock, a decoder generates a switch control signal SWCNT for controlling a switch in response to a control signal CNT in the control signals, a timing detector for switch-ports switching generates a switch-port switching detection signal t_sw in response to the switch control signal, a frequency control signal generator generates frequency control signals ICONT and CCONT in response to the signal t_sw, and a negative voltage generation circuit generates a negative voltage output signal NVG_OUT while switching the frequency of the clock signal generated in the negative voltage generation circuit to different frequencies in response to signals ICONT and CCONT. The switch switches the paths among the plural switch ports in response to the signals SWCNT and NVG_OUT.

Abstract: A frequency synthesizer includes a phase-locked loop circuit having an output. A frequency divider is connected to the output of the phase-locked loop circuit for receiving the signal therefrom and dividing the frequency of the signal. A tunable bandpass filter is connected to the frequency divider and is tuned for selecting a harmonic frequency to obtain a fractional frequency division for a signal output from the phase-locked loop circuit.

Abstract: Disclosed is a semiconductor device which performs signal transmission by using inductor coupling. The semiconductor device comprises one or more transmission and reception coil pair, each pair comprising a single transmission coil and a plurality of reception coils, or a plurality of transmission coils and a single reception coil, or a plurality of transmission coils and a plurality of reception coils.

Abstract: An embodiment of a system and method provides a carbon nanotube transistor (CNT) mixer with a low local oscillator power requirement and no inter-modulation products. Specifically, an embodiment of the system and method provides two kinds of device current-voltage (I-V) characteristics on the same integrated circuit: exponential and linear. The CNT I-V characteristics support both the ideal exponential control characteristic (determined by physics constants) and the ideal linear control characteristic (also determined by physics constants), resulting in an ideal multiplier. In other words, the CNT mixer is mathematically equivalent to an ideal multiplier. Such an ideal multiplier can be used as a mixer with low local oscillator power requirement and virtually no inter-modulation products.

Abstract: An integrated communications system. Comprising a substrate having a receiver disposed on the substrate for converting a received signal to an IF signal. Coupled to a VGA for low voltage applications and coupled to the receiver for processing the IF signal. The VGA includes a bank pair having a first bank of differential pairs of transistors and a second bank of differential pairs of transistors. The bank pair is cross-coupled in parallel, the IF signal is applied to the bank pair decoupled from a control signal used to control transconductance output gain of the bank pair over a range of input voltages. A digital IF demodulator is disposed on the substrate and coupled to the VGA for low voltage applications, for converting the IF signal to a demodulated baseband signal. And a transmitter is disposed on the substrate operating in cooperation with the receiver to establish a two way communications path.

Abstract: An object is to achieve low power consumption and a long lifetime of a semiconductor device having a wireless communication function. The object can be achieved in such a manner that a battery serving as a power supply source and a specific circuit are electrically connected to each other through a transistor in which a channel formation region is formed using an oxide semiconductor. The hydrogen concentration of the oxide semiconductor is lower than or equal to 5×1019 (atoms/cm3). Therefore, leakage current of the transistor can be reduced. As a result, power consumption of the semiconductor device in a standby state can be reduced. Further, the semiconductor device can have a long lifetime.

Abstract: The first control circuit controls the gain of the variable gain amplifier circuit and the cut-off frequency of the first low-pass filter so as to keep constant a product of a transfer function of the variable gain amplifier circuit and a transfer function of the first low-pass filter. The second control circuit compares a level of the second feedback signal and a preset threshold value after completion of gain control of the variable gain amplifier circuit, the second control circuit inputting the signal outputted from the first low-pass filter, as the first feedback signal to the first terminal as long as the level of the second feedback signal is not lower than the threshold value, the second control circuit inputting the signal outputted from the second low-pass filter, as the first feedback signal to the first terminal.

Abstract: A mixer circuit suitable for broadband RF applications is disclosed. A unique biasing scheme for a conventional Gilbert-cell type 4-quadrant multiplier is used, resulting in relatively good linearity, relatively low noise, and relatively low power consumption. Disclosed techniques provide programmability in gain for the mixer and a broadband frequency of operation. A non-linear feedback loop is wrapped around the circuit to stabilize the common-mode voltage shifts due to programming. In one embodiment, a non-linear switch as load-resistance is used to improve the linearity of the circuit.

Abstract: In a communication semiconductor integrated circuit, a capacitance included in a filter on the output side of a mixer circuit is reduced without requiring the cutoff frequency of the filter to be changed. A Gilbert cell circuit is used as a mixer circuit which combines, for downconversion, a reception signal and a local oscillator signal. A low-pass filter for removing unwanted waves from output is composed of load resistors of upper stage differential transistors and a capacitive element provided between differential output terminals. The resistances of the load resistors are increased, and a current circuit for applying a current to emitters or collectors of the upper stage differential transistors is provided, so that a current to make up for a decrease in current amount attributable to the increase in load resistance can be applied from the current circuit to lower stage differential transistors.

Abstract: An embodiment of a wireless galvanic isolator device is formed by a transmitter circuit, a receiver circuit, and a wireless coupling structure, arranged between the transmitter circuit and the receiver circuit. The wireless coupling structure is formed by a pair of antennas each arranged on an own die and integrated together with the respective transmitter and receiver circuit. The two dice may be arranged adjacent to each other in a planar configuration or arranged on top of each other and bonded together.

Abstract: A semiconductor device includes a p-type semiconductor layer and an n-type semiconductor layer that are joined by sandwiching a depletion layer with a thickness that allows transmission of a plurality of electrons and holes by direct-tunneling.

Abstract: A semiconductor device includes a p-type semiconductor layer and an n-type semiconductor layer that are joined by sandwiching a depletion layer with a thickness that allows transmission of a plurality of electrons and holes by direct-tunneling.

Abstract: A semiconductor device (1), comprising: an input attenuator (10) adapted to receive an antenna signal (20) and to output a first attenuated signal (22), the first attenuated signal corresponding to the antenna signal attenuated by a first attenuation factor, the input attenuator being further adapted to receive a control signal (24) and to select one of a plurality of predetermined attenuation factors as said first attenuation factor depending on the control signal; an analogue to digital converter unit (12) adapted to generate an intermediate signal (28) by digitizing said first attenuated signal (22); and a digital attenuator (14) adapted to receive the intermediate signal (28) and to output a second attenuated signal (32), the second attenuated signal corresponding to the intermediate signal attenuated by a second attenuation factor (44), the second attenuation factor being set such as to compensate a gain quantization error of the control signal (24).

Abstract: A monolithically integrated circuit, particularly an integrated circuit for radio frequency power applications, may include a transistor and a spiral inductor. The spiral inductor is arranged above the transistor. An electromagnetic coupling is created between the transistor and the inductor. The transistor may have a finger type layout to prevent any significant eddy currents caused by the electromagnetic coupling from occurring. The chip area needed for the circuit may be reduced by such arrangement.

Abstract: The present invention aims to efficiently calibrate the characteristics of a pair of reception or transmission low-pass filters by a receiving or transmitting circuit. A semiconductor integrated circuit includes an RF receiver that processes an RF reception signal, an RF transmitter that generates an RF transmission signal and a frequency synthesizer. A reception low-pass filter of the RF receiver suppresses undesired components contained in I and Q baseband reception signals. A transmission low-pass filter of the RF transmitter suppresses noise due to D/A conversion, which is contained in I and Q transmission analog baseband signals. A calibration test signal is supplied to the inputs of the pair of reception or transmission low-pass filters. A difference in phase between the pair of filters is detected by a phase detection unit. A calibration controller calibrates a relative mismatch between the cut-off frequencies of the pair of filters.

Abstract: A low-noise amplifier includes first and second transconductance paths and first and second variable capacitive dividers. The first transconductance path has a first terminal for receiving a first input signal, a control terminal, and a second terminal for providing a first output signal. The second transconductance path has a first terminal for receiving a second input signal, a control terminal, and a second terminal for providing a second output signal. The first variable capacitive divider has a first terminal for receiving the first input signal, a second terminal coupled to a reference voltage terminal, and an intermediate terminal coupled to the control terminal of the second transconductance path. The second variable capacitive divider has a first terminal for receiving the second input signal, a second terminal coupled to the reference voltage terminal, and an intermediate terminal coupled to the control terminal of the first transconductance path.

Abstract: An object is to provide a semiconductor device which operates normally even when the communication distance is extremely short, while the maximum communication distance is maintained, and which can make amplitude of a response waveform large even when a large amount of electric power is supplied to the semiconductor device and a protection circuit operates. The object is achieved with a semiconductor device including a first modulation circuit and a second modulation circuit each of which performs load modulation by an input signal, a detection circuit which determines an output signal by electric power supplied externally, a protection circuit which is controlled by the output signal of the detection circuit, and a modulation selecting circuit which switches the first modulation circuit and the second modulation circuit depending on the output signal of the detection circuit.

Abstract: In one embodiment, a combined VGA-and-equalizer (VGA-EQ) circuit for a communication link includes a current-mode logic (“CML”) amplifier with an inductive load circuit. The CML amplifier has a gain control terminal and is operable to amplify, with an adjustable gain, a signal received at an input terminal and provide the amplified signal at an output terminal. The CML amplifier has a first gain at frequencies below a predetermined frequency value and a second gain at frequencies in a predetermined frequency range above the predetermined frequency value, wherein the second gain is higher than the first gain. The higher second gain of the VGA-EQ circuit causes a reduction in inter-symbol interference in a signal received by the receiver.

Abstract: A communication device includes an integrated circuit having an on-chip thermal sensing circuit that generates a temperature signal based on a temperature of the integrated circuit. A processing module processes the temperature signal to generate temperature information that can be transmitted to a remote device or processes the temperature signal to generate control for adjusting transmit and/or receive characteristics of an RF transceiver.

Abstract: An integrated circuit radio transceiver and method therefor includes a high-pass variable gain amplifier (HPVGA) operably disposed within one of the transmitter and the receiver front ends operable to provide a linear variable gain and a substantially constant high-pass frequency corner that does not vary with changes in gain level settings. The HPVGA includes an amplifier operably disposed to receive an input signal and to produce an amplified output based upon the input signal, an adjustable resistance block operable to adjust resistance based upon a gain control input and corner drift compensation block operably disposed to provide corner frequency compensation at the input terminal of the amplifier that is further coupled to receive the input signal from the adjustable resistance block.

Abstract: An integrated circuit, IC, for reception of radio frequency; RF, signals in an antenna network system, the IC comprising: a plurality of amplifying paths to cover a plurality of radio frequency bandwidths or standards, each amplifying path comprising at least one low noise amplifier, at least one variable attenuator unit, and/or at least one gain flattening unit, each of the low noise amplifier, the attenuator unit, and the gain flattening unit being adapted to operate at a respective radio frequency bandwidth or standard; at least one control interface connected with at least one of the low noise amplifier, the attenuator unit, and the gain flattening unit on each amplifying path and adapted for communication with a digital processing unit to control operation of the at least one of the low noise amplifier, the attenuator unit, and the gain flattening unit.

Abstract: In one embodiment, the present invention includes a receiver having two complementary input sense amplifiers to receive, amplify and latch a differential signal and to output complementary stage differential output signals to a latch coupled to receive and combine the n? them into a latched differential output signal. Other embodiments are described and claimed.

Abstract: The present invention aims to efficiently calibrate the characteristics of a pair of reception or transmission low-pass filters by a receiving or transmitting circuit. A semiconductor integrated circuit includes an RF receiver that processes an RF reception signal, an RF transmitter that generates an RF transmission signal and a frequency synthesizer. A reception low-pass filter of the RF receiver suppresses undesired components contained in I and Q baseband reception signals. A transmission low-pass filter of the RF transmitter suppresses noise due to D/A conversion, which is contained in I and Q transmission analog baseband signals. A calibration test signal is supplied to the inputs of the pair of reception or transmission low-pass filters. A difference in phase between the pair of filters is detected by a phase detection unit. A calibration controller calibrates a relative mismatch between the cut-off frequencies of the pair of filters.

Abstract: The present invention relates to a DC offset canceling circuit. In one aspect of the invention, a DC offset canceling circuit with independently configurable gain and roll-off frequency is provided. In one embodiment of the present invention, the DC offset canceling circuit is used in the receive path of a down-conversion wireless receiver. In another aspect of the invention, a method for independently varying the gain and the roll-off frequency of the DC offset canceling circuit is provided. In one embodiment, the method is used to independently operate a gain control scheme and a DC offset cancellation strategy in a DC canceling circuit.

Abstract: A semiconductor device interconnecting unit configured to input/output a high-frequency signal having a millimeter wave band to/from a semiconductor device is provided. The semiconductor or device interconnecting unit includes a part of a band pass filter configured to pass therethrough the high-frequency signal having a millimeter wave band by using an LC resonance circuit, and a remainder of the band pass filter, wherein the part and the remainder are separated from each other. The part is provided inside the semiconductor device, and the remainder is provided outside the semiconductor device. The part and the remainder include capacitors having variable capacitors added thereto, respectively. A pass band for the high-frequency signal having a millimeter wave band is changed by changing capacitance values of the variable capacitors.

Abstract: A radio frequency (RF) circuit (100) as disclosed herein is fabricated on a substrate (204, 304) using integrated passive device (IPD) process technology. The RF circuit (100) includes an RF inductor (200, 300) and an integrated inductive RF coupler (202, 302) located proximate to the RF inductor (200, 300). The inductive RF coupler (202, 302), its output and grounding contact pads, and its transmission lines are fabricated on the same substrate (204, 304) using the same IPD process technology. The inductive RF coupler (202, 302) includes a coupling section (212, 306) that is either located inside or outside a spiral of the RF inductor (200, 300). The inductive RF coupler (202, 302) and the RF inductor (200, 300) are cooperatively configured to function as the windings of an RF transformer, thus achieving the desired coupling. The inductive RF coupler (202, 302) provides efficient and reproducible RF coupling without increasing the die footprint of the RF circuit (100).

Abstract: An integrated communications system. Comprising a substrate having a receiver disposed on the substrate for converting a received signal to an IF signal. Coupled to a VGA for low voltage applications and coupled to the receiver for processing the IF signal. The VGA includes a bank pair having a first bank of differential pairs of transistors and a second bank of differential pairs of transistors. The bank pair is cross-coupled in parallel, the IF signal is applied to the bank pair decoupled from a control signal used to control transconductance output gain of the bank pair over a range of input voltages. A digital IF demodulator is disposed on the substrate and coupled to the VGA for low voltage applications, for converting the IF signal to a demodulated baseband signal. And a transmitter is disposed on the substrate operating in cooperation with the receiver to establish a two way communications path.

Abstract: A direct conversion satellite tuner is fully integrated on a common substrate. The integrated tuner receives an RF signal having a plurality of channels and down-converts a selected channel directly to baseband for further processing. The integrated tuner includes on-chip local oscillator generation, tunable baseband filters, and DC Offset cancellation. The integrated tuner can be implemented in a completely differential I/Q configuration for improved electrical performance. The entire direct conversion satellite tuner can be fabricated on a single semiconductor substrate using standard CMOS processing, with minimal off-chip components. The tuner configuration described herein is not limited to processing TV signals, and can be utilized to down-convert other RF signals to an IF frequency or baseband.

Abstract: An electronic module that operates at various radio frequency standards is provided. The module includes a first integrated circuit die formed in a first semiconductor substrate and manufactured using a first semiconductor process. Disposed within the first integrated circuit is the first signal conditioning circuit for performing a function and the first and second ancillary circuits. The first ancillary circuit electrically coupled to the first signal conditioning circuit for use by the first signal conditioning circuit during operation thereof. The second ancillary circuit is for other than being used by the first signal conditioning circuit during operation thereof since the second integrated circuit die is electrically coupled to the second ancillary circuit and formed in the second semiconductor substrate and co-located with the first integrated circuit within the module.

Abstract: A method and an apparatus for leveling an increasing or decreasing slope of an AM modulated receiving signal attenuate the AM modulated receiving signal with an attenuation curve with a stepwise slope corresponding to the increasing or decreasing slope of said AM modulated receiving signal, filters the attenuated AM modulated receiving signal within AM-demodulation with a lowpass infinite-impulse-response filter of at least second order and increases the level of each delay-unit's output signal of the infinite-impulse-response filter each time a step in the attenuated AM modulated receiving signal arrives at the input of said infinite-impulse-response filter.

Abstract: A function processing unit includes a control-signal input/output unit to which a control signal indicating that radio data for a semiconductor device is transmitted is input by a cable signal, and a reset-signal input unit to which a reset signal instructing reset of the function processing unit is input by a cable signal, and when the reset signal is input, performs a reset process according to the reset signal. A radio-communication processing unit includes a radio-communication-processing-reset-signal input unit to which a radio communication processing reset signal instructing reset of the radio-communication processing unit is input by a cable signal, when the radio communication processing reset signal is input, performs a reset process according to the radio communication processing reset signal, and receives the radio data only when the control signal is input.