Synthetic Precious Stones (e.g., Single Crystals, Etc.) Patents (Class 501/86)
  • Patent number: 4836881
    Abstract: A process for synthesizing a large diamond having a diameter of 8 mm or more by the temperature gradient method, wherein a (111) or (100) surface of a seed crystal having a diameter of 3 mm or more is used as a growing surface, the entire area of the growing surface is first dissolved in the diamond-stable region before crystal growth is started, the crystal growth is effected using a plug of a solvent in which the height of the central portion thereof is higher than the height of the peripheral portion thereof, the plug of a solvent has a planar or curved surface on the side where the plug of a solvent contacts a carbon source during the crystal growth, and the crystal growth is effected under such pressure and temperature conditions that the growth of the (111) or (100) surface is predominant.
    Type: Grant
    Filed: May 9, 1988
    Date of Patent: June 6, 1989
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Shuichi Satoh, Kazuwo Tsuji
  • Patent number: 4792377
    Abstract: A method for growing crystals of sodium beta" alumina is described. The crystals are grown by Czochralski type processes or analogous methods wherein single crystals are formed from a flux or melt. The melt is a eutectic type liquid primarily containing Na or K, (Li, Mg or other divalent element, e.g. Ni.sup.2+, Co.sup.2+, Cr.sup.2+, Fe.sup.2+, etc.) Al, in proportions to produce beta" alumina. To lower the melt temperature to where e.g. Na.sub.2 MgAl.sub.10 O.sub.17 beta" or Na.sub.2 Li.sub.1/2 Al.sub.11/2.degree.17 beta" can crystallize in its stability region (approximately less than 1700.degree. C. for the Mg version and approximately less than 1600.degree. C. for the Li version) high valent ions, which do not enter the structure, particularly V.sup.5+, Nb.sup.5+, Ta.sup.5+, Zr.sup.4+ and/or Hf.sup.4+ are added to the melt. The method has allowed the growth of single crystals of the Li-stabilized sodium and potassium varieties for the first time.
    Type: Grant
    Filed: February 9, 1987
    Date of Patent: December 20, 1988
    Assignee: The Regents of the University of California
    Inventors: Bruce S. Dunn, Peter E. D. Morgan
  • Patent number: 4765925
    Abstract: A chrysoberyl solid laser host which comprises a chrysoberyl matrix doped with trivalent titanium ions for luminescence is described. This host ensures a lasing operation over a wide wavelength range and is highly producible and high in quality.
    Type: Grant
    Filed: March 16, 1987
    Date of Patent: August 23, 1988
    Assignee: Mitsui Mining & Smelting Co. Ltd.
    Inventors: Yutaka Anzai, Kiyoshi Yamagishi, Yasuhide Yamaguchi, Kazuo Moriya
  • Patent number: 4703020
    Abstract: A jewelling and ornamental material comprising many amorphous silica spheres regularly arranged in a three-dimensional array and a zirconium compound filled in pores existing among the amorphous silica spheres, the amount of the zirconium compound being 0.005 to 8% by weight, as zirconium, based on the entire material; and a process for its production. This material has a play of colors inherent to natural opal, and excellent durability.
    Type: Grant
    Filed: March 26, 1986
    Date of Patent: October 27, 1987
    Assignee: Kyocera Corporation
    Inventors: Yuji Nakano, Kazushi Kamiyama, Tatuo Kobayashi
  • Patent number: 4656145
    Abstract: Disclosed is a process for the production of a zirconia type black decorative article which comprises sintering an unsintered molded body comprising a matrix composed mainly of zirconia and at least one stabilizer contained in the matrix, said stabilizer being selected from Y.sub.2 O.sub.3, MgO, CeO.sub.2 and CaO, at a temperature of 1400.degree. to 1600.degree. C. in a non-oxidizing atmosphere so that the molded body becomes black, and subjecting the sintered body to the mirror polishing treatment. The decorative article prepared according to this process has a black and glossy mirror surface and also has high flexural strength and high toughness.
    Type: Grant
    Filed: December 23, 1983
    Date of Patent: April 7, 1987
    Assignee: Kyocera Corporation
    Inventor: Kazunori Soroi
  • Patent number: 4634492
    Abstract: In order to produce a chrysoberyl single crystal displaying a luminous band effect, a mixture of a principal component consisting of beryllium oxide and aluminum oxide in nearly equal molar amounts with small amounts of titanium oxide and coloring metal oxide is sintered or melted and solidified in a non-oxidizing gas atmosphere to provide a raw material bar; the raw material bar is heated in a non-oxidizing gas atmosphere by means of a light condense-heating type floating zone method to grow a chrysoberyl single crystal; and the single crystal is heated so as to allow needle crystals of titanium oxide to be deposited in one orientation in the chrysoberyl single crystal.
    Type: Grant
    Filed: April 26, 1984
    Date of Patent: January 6, 1987
    Assignee: Sumitomo Cement Co., Ltd.
    Inventors: Hitoshi Oguri, Motoya Hirota
  • Patent number: 4621065
    Abstract: Disclosed is a chrysoberyl cat's-eye synthetic single crystal, which comprises aluminum oxide and beryllium oxide as main component, and 0.005 to 1.050% by weight, based on the total crystal, of at least one member selected from oxides of iron, cerium, vanadium, cobalt, tungsten, chromium, nickel and manganese and 0.005 to 2.0% by weight, based on the total crystal, of at least one member selected from oxides of titanium, tin, zirconium and germanium.This synthetic single crystal is comparable to natural cat's-eye in the physical properties, color tone and chatoyancy effect.
    Type: Grant
    Filed: September 21, 1984
    Date of Patent: November 4, 1986
    Assignee: Kyocera Corporation
    Inventors: Mineo Isogami, Ryosuke Nakata
  • Patent number: 4608307
    Abstract: A jewelling and ornamental material comprising many amorphous silica spheres regularly arranged in a three-dimensional array and a zirconium compound filled in pores existing among the amorphous silica spheres, the amount of the zirconium compound being 0.005 to 8% by weight, as zirconium, based on the entire material; and a process for its production. This material has a play of colors inherent to natural opal, and excellent durability.
    Type: Grant
    Filed: October 25, 1984
    Date of Patent: August 26, 1986
    Assignee: Kyocera Corporation
    Inventors: Yuji Nakano, Kazushi Kamiyama, Tatuo Kobayashi
  • Patent number: 4607189
    Abstract: A cathode ray tube (1) having a body (3) of glass material and a faceplate (5) of solid phosphor material. The body (3) and faceplate (5) are sealed together by a sealant (15) of malleable halide material--for example silver chloride, or lead-silver chloride eutectic. Sealing is effected by inserting a ring (15) of sealant material between abutting surfaces of the body (3) and the faceplate (5), heating in vacuum to above the melting point of the sealant, and cooling to allow the sealant to solidify. The faceplate (5) may be of single crystal material--e.g. zinc tungstate or calcium borate, or may be of hot pressed solid material--e.g. zinc yttrium silicate.
    Type: Grant
    Filed: February 22, 1984
    Date of Patent: August 19, 1986
    Assignee: The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern Ireland
    Inventor: Peter J. Born
  • Patent number: 4604876
    Abstract: An imitation gem consisting of a semi shell of a transparent plastic material with concave inner and convex outer surfaces has light reflecting and light refracting facets formed on both its inner concave and outer convex surfaces. The open end of the semi shell is closed by a cover which is also provided with facets so as to further improve light reflection and refraction.
    Type: Grant
    Filed: August 6, 1984
    Date of Patent: August 12, 1986
    Inventor: Reinhold Hoffmann
  • Patent number: 4572618
    Abstract: A method for preparing reversible-photochromic magnesium oxide (MgO) crystals. Single crystals of MgO doped with both lithium (Li) and nickel (Ni) are grown by a conventional arc fusion method. The as-grown crystals are characterized by an amber coloration. The crystals lose the amber coloration and become photochromic when they are thermochemically reduced by heating at temperatures greater than 1000.degree. K. in a hydrogen atmosphere. Alternate irradiation with UV and visible light result in rejuvenation and bleaching of the amber coloration, respectively.
    Type: Grant
    Filed: September 28, 1984
    Date of Patent: February 25, 1986
    Assignee: The United States of America as represented by the Department of Energy
    Inventors: Marvin M. Abraham, Jose L. Boldu, Yok Chen, Victor M. Orera
  • Patent number: 4568650
    Abstract: A method of reoxidizing a partially-reduced ceramic. The partially reduced eramic is heated in a chamber having a non-oxidizing atmosphere. An oxidizing gas is then introduced into the chamber at a rate which is sufficiently slow that cracking will not occur.
    Type: Grant
    Filed: January 17, 1984
    Date of Patent: February 4, 1986
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: William S. Coblenz, Roy W. Rice
  • Patent number: 4543342
    Abstract: A single-crystalline jewelry material based on aluminium garnets of the general formula: Re.sub.3 Al.sub.5 O.sub.12, wherein Re=Y, Dy, Ho, Er, Tm, Lu and containing two dyeing additives. One of the additives is selected from the group consisting of europium in an amount of from 10.sup.-3 to 3% by weight or ytterbium in an amount of from 0.1 to 61.3% by weight and the other is selected from the group consisting of zirconium or silicon in an amount of from 10.sup.-4 to 1% by weight, or hafnium in an amount of from 10.sup.-3 to 3% by weight. The material has a color smoothly changing from green to violet.
    Type: Grant
    Filed: October 24, 1983
    Date of Patent: September 24, 1985
    Inventors: Ashot G. Petrosian, Armen S. Kuzanian, Karine L. Ovanesian, Tatyana I. Butaeva, Grigory O. Shirinian, Ashot A. Avetisian
  • Patent number: 4525460
    Abstract: A single-crystalline material based on aluminium garnets of the general formula Re.sub.3 Al.sub.5 O.sub.12, wherein Re=Y, Dy, Ho, Er, Lu and containing a dyeing additive of a red color spectrum, viz. specifically zirconium, in an amount ranging from 10.sup.-2 to 3% by weight.
    Type: Grant
    Filed: October 24, 1983
    Date of Patent: June 25, 1985
    Inventors: Ashot G. Petrosian, Khachik S. Bagdasarov, Armen S. Kuzanian, Karine L. Ovanesian, Tatyana I. Butaeva
  • Patent number: 4407061
    Abstract: A fabrication technique is described for making various devices in which a certain type of glass is used as a surface protection layer. The glass layers are formed by particle bombardment (generally sputtering or E-beam) of a glass target. Devices with such surface layers are also described. Such glass layers are highly advantageous as encapsulating layers, diffusion barrier layers, etc., particularly for optical type devices and certain semiconductor devices. Particularly important is the preparation procedure for the glass target used in the bombardment process. The glass layers are moisture stable, act as excellent barriers against diffusion, and are usable up to quite high temperatures (i.e., in diffusion doping procedures) without cracking or peeling. The glass layers also provide long-term protection against atmosphere components including water vapor, oxygen, atmosphere pollution contaminants, etc., and can be removed by standard etching techniques.
    Type: Grant
    Filed: June 4, 1981
    Date of Patent: October 4, 1983
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: William H. Grodkiewicz, Shobha Singh, LeGrand G. Van Uitert
  • Patent number: 4376755
    Abstract: This invention is a new process for producing refractory crystalline oxides having improved or unusual properties. The process comprises the steps of forming a doped-metal crystal of the oxide; exposing the doped crystal in a bomb to a reducing atmosphere at superatmospheric pressure and a temperature effecting precipitation of the dopant metal in the crystal lattice of the oxide but insufficient to effect net diffusion of the metal out of the lattice; and then cooling the crystal. Preferably, the cooling step is effected by quenching. The process forms colloidal precipitates of the metal in the oxide lattice. The process may be used, for example, to produce thermally stable black MgO crystalline bodies containing magnetic colloidal precipitates consisting of about 99% Ni. The Ni-containing bodies are solar-selective absorbers, having a room-temperature absorptivity of about 0.96 over virtually all of the solar-energy spectrum and exhibiting an absorption edge in the region of 2 .mu.m.
    Type: Grant
    Filed: January 29, 1982
    Date of Patent: March 15, 1983
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Jagdish Narayan, Yok Chen
  • Patent number: 4333989
    Abstract: A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consisting essentially of sapphire (aluminum oxide) and at least one additive selected from a group consisting of oxides of gallium. A 87 mol percent content of gallium oxide is most preferred for a silicon layer. Similarly, an additive and its content should most preferably be selected depending on the semiconductor, which may be gallium phosphide, aluminium phosphide, or zinc sulphide.
    Type: Grant
    Filed: February 22, 1982
    Date of Patent: June 8, 1982
    Assignee: Semiconductor Research Foundation
    Inventors: Jun-Ichi Nishizawa, Kitsuhiro Kimura
  • Patent number: 4301134
    Abstract: Diamond crystals of controlled impurity content and/or impurity distribution and reaction vessel configurations for the production thereof are described. Combinations of "dopant", "getter" and "compensator" materials are employed to produce gem stones of unusual color patterns, or zoned coloration, using specific reaction vessel configurations.
    Type: Grant
    Filed: March 10, 1978
    Date of Patent: November 17, 1981
    Assignee: General Electric Company
    Inventor: Herbert M. Strong
  • Patent number: 4299632
    Abstract: A ceramic mixture for production of ceramic articles includes, in % weight, clay 1-64, ore selected from the group consisting of iron ore and manganese ore 30-98, and at least one metal oxide 0.1 -12.
    Type: Grant
    Filed: September 22, 1980
    Date of Patent: November 10, 1981
    Inventor: Naum Gosin
  • Patent number: 4292374
    Abstract: A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consists essentially of sapphire (aluminum oxide) and scandium oxide (Sc.sub.2 O.sub.3). The invention also provides the aforesaid single crystal substrate in combination with a semiconductor epitaxially grown thereon. The preferred semiconductors are silicon, gallium phosphide, aluminum phosphide and zinc sulphide.
    Type: Grant
    Filed: May 19, 1980
    Date of Patent: September 29, 1981
    Assignee: Semiconductor Research Foundation
    Inventors: Jun-ichi Nishizawa, Mitsuhiro Kimura
  • Patent number: 4292373
    Abstract: A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consists essentially of sapphire (aluminum oxide) and magnesium titanium oxide (MgTiO.sub.3). The invention also provides the aforesaid single crystal substrate in combination with a semiconductor epitaxially grown thereon. The preferred semiconductors are silicon, gallium phosphide, aluminum phosphide and zinc sulphide.
    Type: Grant
    Filed: May 19, 1980
    Date of Patent: September 29, 1981
    Assignee: Semiconductor Research Foundation
    Inventors: Jun-ichi Nishizawa, Mitsuhiro Kimura
  • Patent number: H200
    Abstract: A high temperature structural insulating material useful as a liner for cylinders of high temperature engines through the favorable combination of high service temperature (above about 800.degree. C.), low thermal conductivity (below about 0.2 W/m.degree. C.), and high compressive strength (above about 250 psi). The insulating material is produced by selecting hollow ceramic beads with a softening temperature above about 800.degree. C., a diameter within the range of 20-200 .mu.m, and a wall thickness in the range of about 2-4 .mu.m; compacting the beads and a compatible silicate binder composition under pressure and sintering conditions to provide the desired structural form with the structure having a closed-cell, compact array of bonded beads.
    Type: Grant
    Filed: June 27, 1984
    Date of Patent: January 6, 1987
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventor: Wayne Y. Chen