Synthetic Precious Stones (e.g., Single Crystals, Etc.) Patents (Class 501/86)
  • Patent number: 10957509
    Abstract: An ion source with an insertable target holder for holding a solid dopant material is disclosed. The insertable target holder includes a hollow interior into which the solid dopant material is disposed. The target holder has a porous surface at a first end, through which vapors from the solid dopant material may enter the arc chamber. The porous surface inhibits the passage of liquid or molten dopant material into the arc chamber. The target holder is also constructed such that it may be refilled with dopant material when the dopant material within the hollow interior has been consumed. The porous surface may be a portion of a perforated crucible, a portion of a perforated retention cap, or a porous insert.
    Type: Grant
    Filed: November 7, 2019
    Date of Patent: March 23, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Graham Wright, Daniel Alvarado, Shreyansh P. Patel, Daniel R. Tieger
  • Patent number: 10737983
    Abstract: A black zirconia sintered body is obtained by processing and forming a powder for the black zirconia sintered body, and then sintering the same at a high temperature and normal pressure in the atmosphere. The powder for the black zirconia sintered body is prepared by a hydrothermal synthesis method using a soluble zirconium salt, a soluble yttrium salt and a color former as raw materials, wherein the molar ratio of the soluble zirconium salt, the soluble yttrium salt and the color former is 90-95:1-5:1-9. The black zirconia sintered body can be used in ceramic processes.
    Type: Grant
    Filed: August 3, 2017
    Date of Patent: August 11, 2020
    Assignee: Shandong Sinocera Functional Material Co., Ltd.
    Inventors: Aimin Yang, Xuekui Mo, Xibin Song
  • Patent number: 9211625
    Abstract: A sapphire substrate flattening method including an ingot slicing step of slicing a sapphire single-crystal ingot to obtain a sapphire substrate, an annealing step of annealing the sapphire substrate, a wafer mounting step of mounting the sapphire substrate processed by the annealing step on a stage having a holding surface in the condition where a first surface of the sapphire substrate is in contact with the holding surface of the stage through a liquid resin, a resin curing step of curing the liquid resin, a first grinding step of grinding a second surface of the sapphire substrate opposite to the first surface, a resin removing step of removing the liquid resin cured on the first surface of the sapphire substrate, and a second grinding step of grinding the first surface of the sapphire substrate.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: December 15, 2015
    Assignee: DISCO CORPORATION
    Inventor: Hiroshi Kurokawa
  • Patent number: 9053834
    Abstract: A silicon carbide single crystal includes nitrogen as a dopant and aluminum as a dopant. A nitrogen concentration is 2×1019 cm?3 or higher and a ratio of an aluminum concentration to the nitrogen concentration is within a range of 5% to 40%.
    Type: Grant
    Filed: July 29, 2011
    Date of Patent: June 9, 2015
    Assignees: DENSO CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Fusao Hirose, Jun Kojima, Kazutoshi Kojima, Tomohisa Kato, Ayumu Adachi, Koichi Nishikawa
  • Publication number: 20140335339
    Abstract: A single crystal CVD synthetic diamond material comprising: a total as-grown nitrogen concentration equal to or greater than 5 ppm, and a uniform distribution of defects, wherein said uniform distribution of defects is defined by one or more of the following characteristics: (i) the total nitrogen concentration, when mapped by secondary ion mass spectrometry (SIMS) over an area equal to or greater than 50×50 ?m using an analysis area of 10 ?m or less, possesses a point-to-point variation of less than 30% of an average total nitrogen concentration value, or when mapped by SIMS over an area equal to or greater than 200×200 ?m using an analysis area of 60 ?m or less, possesses a point-to-point variation of less than 30% of an average total nitrogen concentration value; (ii) an as-grown nitrogen-vacancy defect (NV) concentration equal to or greater than 50 ppb as measured using 77K UV-visible absorption measurements, wherein the nitrogen-vacancy defects are uniformly distributed through the synthetic single cryst
    Type: Application
    Filed: December 12, 2012
    Publication date: November 13, 2014
    Inventors: Harpreet Kaur Dhillon, Daniel James Twitchen, Rizwan Uddin Ahmad Khan
  • Patent number: 8641999
    Abstract: Plasma assisted chemical vapor deposition is used to form single crystal diamond from a seed and methane. A susceptor is used to support the seed. Under certain conditions, crystalline grit is formed in addition to the diamond. The crystalline grit in one embodiment comprises mono crystals or twin crystals of carbon, each having its own nucleus. The crystals form in columns or tendrils to the side of the monocrystalline diamond or off a side of the susceptor. The crystals may have bonding imperfections which simulate doping, providing conductivity. They may also be directly doped. Many tools may be coated with the grit.
    Type: Grant
    Filed: July 11, 2005
    Date of Patent: February 4, 2014
    Assignee: SCIO Diamond Technology Corporation
    Inventors: Patrick J. Doering, Alfred Genis, Robert C. Linares, John J. Calabria
  • Publication number: 20130239614
    Abstract: The present invention provides a diamond simulant with greater similarity to a diamond than cubic zirconia. The present invention further provides a diamond simulant with durability, hardness, and optical features closer to that of a genuine diamond that previously afforded by other diamond simulants, such as cubic zirconia.
    Type: Application
    Filed: February 4, 2011
    Publication date: September 19, 2013
    Inventors: Jack Malinowski, Gary Lacourt, Frank Calcagni
  • Publication number: 20130237402
    Abstract: The present invention provides a method for manufacturing a corundum substance, comprising steps of providing a corundum crystal having an a-axis and a growth along the a-axis; and obtaining the corundum substance from the corundum crystal in a particular direction.
    Type: Application
    Filed: June 1, 2012
    Publication date: September 12, 2013
    Inventors: Wei-Hsiang Wang, Chen-Hui Wu, Chuan-Lang Lu
  • Publication number: 20130217562
    Abstract: A colored translucent zirconia sintered body contains a transition metal element as a coloring agent, having a clear color tone and high transparency, and being excellent in both design properties and esthetic properties, and its production process. A colored translucent zirconia sintered body includes yttria in an amount of at least 6 mol % and at most 15 mol % and at least one member selected from the group consisting of iron, nickel, manganese, cobalt, chromium, copper and vanadium in an amount of at least 0.02 mol % and at most 0.5 mol % as calculated as oxides, and having a porosity of at most 1,000 ppm. The average crystal grain size is preferably at most 60 ?m.
    Type: Application
    Filed: November 4, 2011
    Publication date: August 22, 2013
    Applicant: TOSOH CORPORATION
    Inventors: Shoichi Yamauchi, Isao Yamashita, Koji Tsukuma
  • Patent number: 8490612
    Abstract: The present invention protects opals during processing from rhyolite nodules. An opal containing rhyolite nodule is soaked in a heated polyester resin, styrene (100-42-5) solution for 24 hours per 10 grams of nodule. The rhyolite nodule is dried and sawed into slabs, which are soaked in a heated polyester resin, styrene (100-42-5) solution. The soaked slabs are cut into pieces, cabochons are marked out, and the pieces are rough cut into pre forms. The pre forms are soaked in a heated polyester resin, styrene (100-42-5) solution, beneficially for 24 hours. The pre forms are dried and cut into cabochons, which are soaked (preferably for 24 hours) in a heated polyester resin, styrene (100-42-5) solution. The soaked cabochons are then dried, polished, and air cured.
    Type: Grant
    Filed: November 30, 2010
    Date of Patent: July 23, 2013
    Inventor: Thomas C. Shope, Jr.
  • Publication number: 20120199792
    Abstract: The object of the invention is to increase the yield of the HPHT—(High-Pressure High-Temperature)—Technology for production of synthetic diamonds and diamond-like materials as well as to achieve the continuous production of large amounts or quantities of synthetic diamonds with perfect or high quality. The object of the invention will be reached by methods and devices according to the present invention, wherein the method comprises the following steps: cultivation or collection of biomass, preparing and chemical modification of biomass preferably by (adding or enriching with) salt or salts containing at least one catalyst, incineration of biomass to ash, adding to ash modifiers including salt or salts containing at least one catalyst, HPHT-treatment of the resulting carbon-containing matrix and the isolation of the products after the HPHT-treatment.
    Type: Application
    Filed: February 1, 2012
    Publication date: August 9, 2012
    Inventor: Alexander Cherkasky
  • Publication number: 20120088649
    Abstract: This invention provides a polycrystalline yttrium aluminum garnet (YAG) which is transparent in the visible and near infrared region. The invention also provides a method of manufacturing a transparent sintered YAG, which has nearly no porosity.
    Type: Application
    Filed: June 22, 2010
    Publication date: April 12, 2012
    Inventors: Nahum Frage, Moshe Dariel, Sergei Kalabuchov
  • Publication number: 20120015799
    Abstract: A method for producing a sapphire single crystal, which includes: performing a sapphire single crystal growth step wherein a sapphire ingot, which is an ingot of sapphire single crystal, is produced (step 101); performing a subsequent ingot heating step wherein the sapphire ingot obtained in the sapphire single crystal growth step is heated (step 102); and performing a subsequent ingot processing step wherein the heated sapphire ingot is machined (step 103). In the ingot heating step, the sapphire ingot is heated in an atmosphere in which the oxygen concentration is increased to be equal to or higher than that in the air. Consequently, crystal defects in the ingot of sapphire single crystal produced by crystal growth are removed and the occurrence of cracks in the sapphire ingot during machining of the sapphire ingot is suppressed, thereby improving the yield of sapphire products obtained from the ingot.
    Type: Application
    Filed: June 25, 2010
    Publication date: January 19, 2012
    Applicant: SHOWA DENKO K.K.
    Inventor: Tomohiro Shonai
  • Publication number: 20110130266
    Abstract: The method of making uniform low-stress crystals includes immersing a seed crystal held at a temperature under its melting point in a melt in a crucible and drawing it from the melt. The crystal and/or melt are rotated relative to each other and a planar phase boundary surface is maintained between them by detecting a surface temperature of the melt and/or crystal and controlling temperature fluctuations by increasing or decreasing the rotation speed. A low-stress crystal of formula: (A1-xDx)3Al5O12 wherein 0<x<1, A=Lu and D=Pr and/or Ce, is preferred. These crystals have an index of refraction uniformity ?n of <1 ppm and a stress birefringence of <1 nm/cm at 193 nm, so that they are suitable for making optical elements for DUV lithography.
    Type: Application
    Filed: January 6, 2011
    Publication date: June 2, 2011
    Inventors: Gunther Wehrhan, Lutz Parthier, Daniel Rytz, Klaus Dupre, Lothar Ackermann
  • Patent number: 7927879
    Abstract: Proposed is a zirconium crucible used for melting an analytical sample in the pretreatment of the analytical sample, wherein the purity of the zirconium crucible is 99.99 wt % or higher. In light of the recent analytical technology demanded of fast and accurate measurement of high purity materials, the present invention provides a zirconium crucible for melting an analytical sample, a method of preparing such analytical sample, and a method of analysis that enables the analysis of high purity materials by inhibiting the inclusion of impurities from the crucible regardless of difference in the analysts and their skill.
    Type: Grant
    Filed: February 20, 2007
    Date of Patent: April 19, 2011
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Masahiro Sakaguchi, Mitsuru Yamaguchi, Tomio Takahashi, Kouichi Takemoto
  • Patent number: 7732011
    Abstract: The embodiments of present invention provide method for imparting tone-controlled colors into colorless crystals such as gemstones or decorative objects by coating a atomically mixed thin film comprising of a color causing reagent and a toner material onto the surface of colorless gemstones or transparent crystals and subjecting them to a heat treatment to produce colors of desired shades in the crystals. The method employed is radiation-free, eco-friendly and avoid the use of any hazardous material. The method highlights that controlling the amount of toner material could easily control the shade of color induced by the colorant material. The coating of atomically mixed single film onto the surface of crystals results in reduction of diffusion time significantly at a reasonable temperature, to impart colors to crystals such as gemstones and colorless decorative objects.
    Type: Grant
    Filed: August 22, 2008
    Date of Patent: June 8, 2010
    Inventors: Ram Pratap Gupta, Samir Gupta
  • Publication number: 20100044584
    Abstract: Disclosed herein is a material for altering electromagnetic radiation incident on the material. The material disclosed herein comprises carbon nanotubes having a length (L) that meets the following formula (1): L?½ ???(1) where ? is the wavelength of the electromagnetic radiation incident on the material. Also disclosed herein are methods of altering electromagnetic radiation, including mitigating, intensifying, or absorbing and re-transmitting electromagnetic radiation using the disclosed material.
    Type: Application
    Filed: January 7, 2009
    Publication date: February 25, 2010
    Inventors: Christopher H. Cooper, William K. Cooper, Alan G. Cummings
  • Patent number: 7651861
    Abstract: There is provided a method of forming a fluorite crystal and an exposure apparatus including this fluorite crystal. A method of manufacturing a device using the exposure apparatus is also provided.
    Type: Grant
    Filed: February 22, 2006
    Date of Patent: January 26, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventor: Kenji Ookubo
  • Patent number: 7585365
    Abstract: A corundum crystal formed body having a corundum crystal grown directly on a base material and a production process capable of producing the corundum crystal formed body easily at low costs. The a corundum crystal formed body has a platinum base material and a corundum crystal portion formed on the platinum base material. Further, the process for producing a corundum crystal formed body involves forming a corundum crystal on a platinum base material by a flux evaporation method of heating a sample containing a raw material and a flux to precipitate a crystal. The crystal is grown by use of flux evaporation as a driving force.
    Type: Grant
    Filed: February 17, 2005
    Date of Patent: September 8, 2009
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventor: Katsuya Teshima
  • Publication number: 20090069168
    Abstract: Polycrystalline alumina (PCA) that has been doped with magnesium oxide is converted to sapphire by additionally doping the PCA with boron oxide and sintering to induce abnormal grain growth. The boron oxide may be added to an already formed green PCA ceramic shape by applying an aqueous boric acid solution to the green ceramic and heating the green ceramic in air to convert the boric acid to boron oxide.
    Type: Application
    Filed: September 11, 2007
    Publication date: March 12, 2009
    Applicant: OSRAM SYLVANIA INC.
    Inventor: George C. Wei
  • Patent number: 7442660
    Abstract: A synthetic fire opal having similar physical and chemical properties as natural fire opal. The synthetic fire opal is colored, hard, and transparent. The synthetic fire opal comprises SiO2 and water.
    Type: Grant
    Filed: August 10, 2007
    Date of Patent: October 28, 2008
    Assignee: Rhea Industries
    Inventor: Rajneesh Bhandari
  • Publication number: 20080227617
    Abstract: An artificial corundum crystal which can be put into practical use at low costs, and a process for producing the same. The artificial corundum crystal contains a seed crystal and has at least one crystal face selected from a {113} face, a {012} face, a {104} face, a {110} face, a {101} face, a {116} face, a {211} face, a {122} face, a {214} face, a {100} face, a {125} face, a {223} face, a {131} face, and a {312} face. The process for producing the artificial corundum crystal an artificial corundum crystal having a hexagonally dipyramidal includes forming with a seed crystal by a flux evaporation method of heating a sample containing a raw material and a flux to precipitate a crystal and grow the crystal by use of flux evaporation as a driving force.
    Type: Application
    Filed: February 17, 2005
    Publication date: September 18, 2008
    Inventors: Katsuya Teshima, Shuji Oishi
  • Publication number: 20080090720
    Abstract: The embodiments of the invention are directed to a synthetic ceramic comprising pyroxene-containing crystalline phase, a clast, and a glass phase, wherein at least a portion of the synthetic ceramic is plastically deformable in a certain temperature range. Other embodiments of the invention relate to a method of making a synthetic ceramic, comprising heating a green ceramic material to 900-1400° C., to a temperature sufficient to initiate partial melting of at least a portion of the green ceramic material, transferring the heated green ceramic material to a press, pressing the heated green ceramic material in a die at 1,000 to 10,000 psi, and transferring the heated, pressed green ceramic material to a furnace for cooling to form the synthetic ceramic.
    Type: Application
    Filed: September 29, 2006
    Publication date: April 17, 2008
    Applicant: CERAMEXT, LLC
    Inventors: Jerry Warmerdam, Joseph R. Cochran, Ross Guenther, James L. Wood, Robert D. Villwock
  • Patent number: 7264750
    Abstract: When produced as a single crystal ingot, a rare earth silicate single crystal 1 can be formed by cutting out from the single crystal ingot. The single crystal 1 has a crystal face F100 whose Miller indices can be determined by X-ray diffraction. The crystal face F100 is composed of a plurality of smooth partial region surfaces (for example, the partial region surface f100A and partial region surface f100B), the plurality of partial region surfaces each have an area detectable by X-ray diffraction, and the angles ? formed between the normal vectors of the plurality of partial region surfaces satisfy the following inequality: 0.1°???2.0°.
    Type: Grant
    Filed: July 26, 2004
    Date of Patent: September 4, 2007
    Assignee: Hitachi Chemical Co., Ltd.
    Inventors: Kazuhisa Kurashige, Naoaki Shimura, Hiroyuki Ishibashi, Akihiro Gunji, Mitsushi Kamada
  • Patent number: 7087112
    Abstract: An apparatus and method for fabricating a mount for an aluminum nitride (AlN) seed for single crystal aluminum nitride growth is provided. A holder having a proximal base and wall portions extending therefrom is fabricated from crystal growth crucible material, and defines an internal cavity. An AlN seed is placed within the holder, and placed within a nitrogen atmosphere at a temperature at or exceeding the melting point of a suitable material capable of forming a nitride ceramic by nitridation, such as aluminum. Pellets fabricated from this material are dropped into the holder and onto the seed, so that they melt and react with the nitrogen atmosphere to form a nitride ceramic. The seed is effectively molded in-situ with the ceramic, so that the ceramic and holder forms a closely conforming holder for the seed, suitable for single crystal AlN growth.
    Type: Grant
    Filed: December 2, 2003
    Date of Patent: August 8, 2006
    Assignee: Crystal IS, Inc.
    Inventors: Juan Carlos Rojo, Leo J. Schowalter, Kenneth Morgan, Jan Barani
  • Patent number: 6936557
    Abstract: A novel multipurpose mineral composition capable of emitting a large quantity of far infrared rays, negative ions and oxygen heat is manufactured by setting up an iron railing, an iron rod and an iron plate on a brazier, placing a tinfoil on the iron plate, and layering yellow soil, kaolin, sericite, and biomineral in sequence on the tinfoil, while inserting the tinfoil between the layers, loading a pulverized elvan in the furnace, pulverizing a mixed stone including 40 wt % of germanium, 15 wt % of tourmaline, 30 wt % of zeolite, and 15 wt % of franklinite, to the particle size under about 44 ?m, and loading the pulverized mixed stone in an internal furnace which is made by winding a copper plate with a tinfoil and placed on the plurality of layers of the furnace, heating the pulverized mixed stone at about 1,000° C. for about seven days into a lump, and repulverizing the lump.
    Type: Grant
    Filed: May 28, 2002
    Date of Patent: August 30, 2005
    Inventor: Yong-Jin Park
  • Patent number: 6872422
    Abstract: The present invention provides a process for imparting colors to colorless gemstone/minerals and enhancing properties of gemstone/minerals by coating a thin/thick film of a particular material or multiple films of different materials on polished gemstones/minerals to impart color in colorless stones and to enhance the color in paler stones, and to such gemstones/mineral obtained by the process.
    Type: Grant
    Filed: January 25, 2002
    Date of Patent: March 29, 2005
    Inventors: Samir Gupta, Manuj Goyal
  • Patent number: 6650489
    Abstract: A gem identifying device using filtered transmitted light for use in distinguishing type-I colorless diamonds from type II colorless diamonds, and natural diamonds and gems from synthetic or treated diamonds and gems.
    Type: Grant
    Filed: July 17, 2002
    Date of Patent: November 18, 2003
    Assignee: Gemological Institute of America, Inc.
    Inventors: Gilbert N. Ravich, Shane Elen, James Shigley
  • Patent number: 6635309
    Abstract: In accordance with the present invention, there are provided methods for enhancing the color of gemstone(s) by subjecting a combination of a gemstone and at least one finely divided form of a selected treating agent including the element copper to a temperature in the range of about 700° C. up to about 1000° C., for a time period in the range of about 3 hours up to about 600 hours, under conditions suitable to enhance the color of the gemstone, wherein the treating agent consists of a finely divided form of the selected treating agent such as copper metal or copper oxide, and wherein said gemstone is topaz or sapphire and the enhanced color lies in the color spectrum of light yellow to red.
    Type: Grant
    Filed: March 12, 2001
    Date of Patent: October 21, 2003
    Inventor: Richard D. Pollak
  • Patent number: 6517807
    Abstract: This invention relates to a process for producing zeolite-bound high silica zeolites and the use of the zeolite-bound high silica zeolite produced by the process for hydrocarbon conversion. The process is carried out by forming an extrudable paste comprising a mixture of high silica zeolite in the hydrogen form, water, silica, and optionally an extrusion aid, extruding the extrudable paste to form silica-bound high silica zeolite extrudates, and then converting the silica of the binder to a zeolite binder. The zeolite-bound high silica zeolite produced by the process comprises high silica zeolite crystals that are bound together by zeolite binder crystals. The zeolite-bound high silica zeolite finds particular application in hydrocarbon conversion processes, e.g., catalytic cracking, alkylation, disproportionation of toluene, isomerization, and transalkylation reactions.
    Type: Grant
    Filed: November 14, 2001
    Date of Patent: February 11, 2003
    Assignee: ExxonMobil Chemical Patents Inc.
    Inventors: Johannes P. Verduijn, Gary David Mohr
  • Patent number: 6511571
    Abstract: A method in which a separate preformed optical material is suitably sized for easy handling, manipulation, and fabrication into a waveguide having a core (formed from the optical material) having transverse cross-sectional dimensions on the order of only tens of microns. The method may include a plurality of mechanical steps, e.g., lapping, polishing, and/or dicing, and bonding steps, e.g., attaching with adhesives. In one embodiment, the method includes the steps of providing an optical material, thinning and polishing the optical material to form a core comprising a plurality of longitudinally extending surfaces, providing a plurality of support substrates, and attaching the plurality of support substrates to the longitudinally extending surfaces of the core. The plurality of support substrates may be attached to the plurality of longitudinally extending surfaces of the optical material with an adhesive.
    Type: Grant
    Filed: May 9, 2001
    Date of Patent: January 28, 2003
    Assignee: Molecular OptoElectronics Corporation
    Inventors: Kevin J. McCallion, Brian L. Lawrence, Gregory A. Wagoner, Paul R. Quantock, John L. Schulze
  • Publication number: 20030017932
    Abstract: The invention includes a novel synthetic gem comprising elements recovered from complete or partial human or animal remains. The invention also includes the process of manufacturing synthetic gems comprising carbon from a vertebrate by cremating human or animal remains to produce carbon in a particulate and gaseous form. The carbon is then filtered using a conventional filtering technique. The carbon and other elements are then purified and graphetized using a Halogen Purification technique. The gems are then created using conventional sublimation techniques. The synthetic gems may be faceted and polished utilizing conventional faceting and polishing techniques. The gems may also utilize a conventional marking system.
    Type: Application
    Filed: March 18, 2002
    Publication date: January 23, 2003
    Inventors: Russell P. VandenBiesen, Gregory R. Herro, Dean T. VandenBiesen
  • Patent number: 6479420
    Abstract: A sintered ceramic for a scintillator having a composition represented by the general formula of Gd3-xCexAlySizGa5-y-zO12, wherein 0.001≦x≦0.05, 1≦y≦4, and 0.0015≦z≦0.03, is produced by mixing gadolinium oxide, aluminum oxide, gallium oxide, a cerium salt, a silicon compound and a fluorine compound in such proportions as to provide the above composition; calcining the resultant mixture at a temperature of 1400-1600° C.; disintegrating the resultant calcined body to ceramic powder; pressing the ceramic powder to provide a green body; and sintering the green body at a temperature of 1600-1700° C. in a non-oxidizing atmosphere at 5×104 Pa or more, and optionally further by hot isostatic pressing at a temperature of 1400-1600° C. in an argon atmosphere.
    Type: Grant
    Filed: April 6, 2001
    Date of Patent: November 12, 2002
    Assignee: Hitachi Metals, Ltd.
    Inventor: Ryouhei Nakamura
  • Patent number: 6475942
    Abstract: A process for converting a polycrystalline ceramic material to a single crystal material includes the steps of doping at least a first portion of the polycrystalline ceramic material with a conversion-enhancing dopant having a +6 valence state in the unfired ceramic material and heating the polycrystalline ceramic material to convert at least a second portion of the polycrystalline ceramic material to a single crystal ceramic material. Preferably, the ceramic material is alumina and the conversion-enhancing dopant is molybdenum or tungsten.
    Type: Grant
    Filed: September 5, 2000
    Date of Patent: November 5, 2002
    Assignee: General Electric Company
    Inventors: James Anthony Brewer, Charles David Greskovich, Curtis Edward Scott
  • Publication number: 20020008925
    Abstract: A gem identifying device using filtered transmitted light for use in distinguishing type-I colorless diamonds from type II colorless diamonds, and natural diamonds and gems from synthetic or treated diamonds and gems.
    Type: Application
    Filed: August 16, 2001
    Publication date: January 24, 2002
    Applicant: Gemological Institute of America, Inc.
    Inventors: Gilbert N. Ravich, Shane Elen, James E. Shigley
  • Patent number: 6292315
    Abstract: A gem identifying device using filtered transmitted light for use in distinguishing type-I colorless diamonds from type II colorless diamonds, and natural diamonds and gems from synthetic or treated diamonds and gems.
    Type: Grant
    Filed: July 28, 1999
    Date of Patent: September 18, 2001
    Assignee: Gemological Institute of America, Inc.
    Inventors: Gilbert N. Ravich, Shane Elen, James Shigley
  • Patent number: 6270604
    Abstract: A method in which a separate preformed optical material is suitably sized for easy handling, manipulation, and fabrication into a waveguide having a core (formed from the optical material) having transverse cross-sectional dimensions on the order of only tens of microns. The method may include a plurality of mechanical steps, e.g., lapping, polishing, and/or dicing, and bonding steps, e.g., attaching with adhesives. In one embodiment, the method includes the steps of providing an optical material, thinning and polishing the optical material to form a core comprising a plurality of longitudinally extending surfaces, providing a plurality of support substrates, and attaching the plurality of support substrates to the longitudinally extending surfaces of the core. The plurality of support substrates may be attached to the plurality of longitudinally extending surfaces of the optical material with an adhesive.
    Type: Grant
    Filed: July 23, 1998
    Date of Patent: August 7, 2001
    Assignee: Molecular OptoElectronics Corporation
    Inventors: Kevin J. McCallion, Brian L. Lawrence, Gregory A. Wagoner, Paul R. Quantock, John L. Schulze
  • Publication number: 20010011058
    Abstract: Provided are a heat-resistant glass fiber which has excellent heat resistance, which is also easy to spin and less expensive and which is suitable as an acoustic material for use in an automobile muffler, and a process for the production thereof. The heat-resistant glass fiber has a composition comprising, substantially by weight %, 56 to 58.5% of SiO2, 12 to 17% of Al2O3, 16 to 27% of CaO, 1 to 9% of MgO, 0 to 1% of Na2O and 0 to 1% of K2O as the entirety of the fiber and containing neither B2O3 nor F2, and has a surface layer portion made of a silicic glass having an SiO2 content of at least 90% by weight. The process comprises treating the surface of the above fiber having the above composition with a mineral acid, to produce the heat-resistant glass fiber.
    Type: Application
    Filed: January 19, 2001
    Publication date: August 2, 2001
    Inventor: Shinichi Tamura
  • Patent number: 6200917
    Abstract: Large single crystals of silicon carbide are grown in a furnace sublimation system. The crystals are grown with compensating levels of p-type and n-type dopants (i.e., roughly equal levels of the two dopants) in order to produce a crystal that is essentially colorless. The crystal may be cut and fashioned into synthetic gemstones having extraordinary toughness and hardness, and a brilliance meeting or exceeding that of diamond.
    Type: Grant
    Filed: February 14, 2000
    Date of Patent: March 13, 2001
    Assignee: Cree, Inc.
    Inventors: Calvin H. Carter, Valeri F. Tsvetkov, Robert C. Glass
  • Patent number: 6048813
    Abstract: Simulated diamond gemstones are produced by faceting and polishing bulk single crystals of colorless synthetic aluminum nitride or aluminum nitride:silicon carbide alloys.
    Type: Grant
    Filed: October 9, 1998
    Date of Patent: April 11, 2000
    Assignee: Cree, Inc.
    Inventor: Charles Eric Hunter
  • Patent number: 6025289
    Abstract: Large single crystals of silicon carbide are grown in a furnace sublimation system. The crystals are grown with compensating levels of p-type and n-type dopants (i.e., roughly equal levels of the two dopants) in order to produce a crystal that is essentially colorless. The crystal may be cut and fashioned into synthetic gemstones having extraordinary toughness and hardness, and a brilliance meeting or exceeding that of diamond.
    Type: Grant
    Filed: December 4, 1997
    Date of Patent: February 15, 2000
    Assignee: Cree Research, Inc.
    Inventors: Calvin H. Carter, Valeri F. Tsvetkov, Robert C. Glass
  • Patent number: 5925310
    Abstract: A method of making a perforated silicon carbide product in a shorter time and with less labor work to achieve a lower cost and high yield. Openings 13a, 13b are previously formed in a mold 11, and inserts 14 are inserted into the openings to project toward the inside of the mold. A slurry 15 composed of a mixture of a silicon carbide powder, an organic binder and water is put in the mold to conduct a slip casting molding method whereby a molded green product with perforation 16 is obtained.
    Type: Grant
    Filed: March 26, 1997
    Date of Patent: July 20, 1999
    Assignees: Asahi Glass Company Ltd., Pacific Rundum Company Ltd.
    Inventors: Takahiro Nakayama, Nobuo Kageyama, Takashi Chikaso
  • Patent number: 5916955
    Abstract: The present invention relates to a diamond-carbon material, containing carbon, hydrogen, nitrogen, oxygen and incombustible impurities of a composition specified in the disclosure, and the surface contains methyl, carboxyl, lactone, aldehyde, ether and quinone groups.The material of the present invention is produced by detonating an oxygen-deficient explosive in a closed volume in a medium inert towards carbon, at a cooling rate of the detonation products of 200 to 6000 degree/min.
    Type: Grant
    Filed: December 23, 1996
    Date of Patent: June 29, 1999
    Assignee: Federalny Nauchno-Proizvodstvenny Tsentr Altai
    Inventors: Alexandr Leonidovich Vereschagin, Evgeny Anatolievich Petrov, Gennady Viktorovich Sakovich, Vitaly Fedorovich Komarov, Anatoly Valentinovich Klimov, Nikolai Vladimirovich Kozyrev
  • Patent number: 5888918
    Abstract: In accordance with the present invention, there are provided methods for enhancing the color of minerals useful as gemstones. Invention methods are relatively inexpensive to carry out, avoid the use of hazardous materials, and require no specialized equipment.
    Type: Grant
    Filed: April 25, 1997
    Date of Patent: March 30, 1999
    Inventor: Richard Pollak
  • Patent number: 5861349
    Abstract: A diamond-containing material having the following element content ratio in per cent by weight: carbon 75-90, hydrogen 0.6-1.5, nitrogen 1.0-4.5, oxygen the balance, the following phase content ratio in per cent by weight: roentgen amorphous diamond-like phase 10-30, diamond of cubic modification the balance, and having a porous structure. 10-20% of the surface of the material consists of methyl, nitryl and hydroxyl groups of two types, as well as functional oxycarbonic groups of the general formula O.dbd.R where R represents .dbd.COH, .dbd.COOH, .dbd.CO, .dbd.C.sub.6 H.sub.4 O or any of their combinations, and 1-2% of the surface constits of carbon atoms with non-compensated links. A method for obtaining said material consists in detonation of a carbon-containing explosive substance with negative oxygen balance, or a mixture of explosive substances, in a closed volume in the atmosphere of gases inert to carbon, with an oxygen content of 0.1-6.
    Type: Grant
    Filed: November 18, 1993
    Date of Patent: January 19, 1999
    Assignee: Nauchno-Proizvodstvennoe Obiedinenie "Altai"
    Inventors: Alexandr Leonidovich Vereschagin, Evgeny Anatolievich Petrov, Gennady Viktorovich Sakovich, Vitaly Fedorovich Komarov, Anatoly Valentinovich Klimov, Nikolai Vladimirovich Kozyrev
  • Patent number: 5723391
    Abstract: Synthetic gemstones having extraordinary brilliance and hardness are formed from large single crystals of relatively low impurity, translucent silicon carbide of a single polytype that are grown in a furnace sublimation system. The crystals are cut into rough gemstones that are thereafter fashioned into finished gemstones. A wide range of colors and shades is available by selective doping of the crystal during growth. A colorless gemstone is produced by growing the crystal undoped in a system substantially free of unwanted impurity atoms.
    Type: Grant
    Filed: October 30, 1996
    Date of Patent: March 3, 1998
    Assignee: C3, Inc.
    Inventors: Charles Eric Hunter, Dirk Verbiest
  • Patent number: 5683949
    Abstract: A solid state method of converting a polycrystalline ceramic body to a single crystal body includes the steps of doping the polycrystalline ceramic material with a conversion-enhancing dopant and then heating the polycrystalline body at a selected temperature for a selected time sufficient to convert the polycrystalline body to a single crystal. The selected temperature is less than the melting temperature of the polycrystalline material and greater than about one-half the melting temperature of the material. In the conversion of polycrystalline alumina to single crystal alumina (sapphire), examples of conversion-enhancing dopants include cations having a +3 valence, such as chromium, gallium, and titanium.
    Type: Grant
    Filed: November 30, 1995
    Date of Patent: November 4, 1997
    Assignee: General Electric Company
    Inventors: Curtis Edward Scott, Mary Sue Kaliszewski, Lionel Monty Levinson
  • Patent number: 5665664
    Abstract: Proposed is a grain boundary-free crystalline body of a perovskite structure having a chemical composition of the formula Pr.sub.1-x M.sub.x MnO.sub.3, in which M is calcium or strontium and the subscript x is a number of 0.3 to 0.5, which exhibits a magnetoresistance behavior with a phase transition between an insulator phase and a ferromagnetic metallic phase accompanied by the phenomenon of hysteresis. This grain boundary-free crystalline body can be obtained by subjecting a sintered body of a powder blend consisting of the oxides of praseodymium, manganese and calcium or strontium to a crystal growing treatment by the floating zone-melting method in an atmosphere of oxygen.
    Type: Grant
    Filed: November 3, 1995
    Date of Patent: September 9, 1997
    Assignees: Japan as represented by Director General of Agency of Industrial Science and Technology, Angstrom Technology Partnership
    Inventors: Yasuhide Tomioka, Yoshinori Tokura
  • Patent number: 5559061
    Abstract: A glass composition substantially comprising silicon oxide, calcium oxide and aluminum oxide, and its use for producing gems.
    Type: Grant
    Filed: November 14, 1995
    Date of Patent: September 24, 1996
    Assignee: D. Swarovski & Co.
    Inventors: Norbert Bilek, Wolfgang Porcham, Michael Schlamadinger, Gerold Sprachmann
  • Patent number: 5484750
    Abstract: Transparent, polycrystalline garnet bodies having desirable properties for use as laser material, luminescent x-ray scintillator materials and other uses are produced by mixing a chloride source solution of the desired cations with a basic ammonium solution to produce a precipitate having a substantially uniform composition which can be further processed to provide the desired transparent body. This precipitate is separated from the solution, dried, thermally decomposed at a temperature in the range from 700.degree. to 1,000.degree. C., pressed to form a compact, isostatically pressed at up to 60,000 psi to provide a green, unsintered compact having a density in the vicinity of 55% of theoretic density. That green compact is then sintered in oxygen at a temperature between 1,400.degree. and 1,700.degree. C. to produce the desired transparent body. Alternatively, the compact may be sintered in oxygen at temperatures in the range from about 1,400.degree. to about 1,600.degree. C.
    Type: Grant
    Filed: August 10, 1994
    Date of Patent: January 16, 1996
    Assignee: General Electric Company
    Inventors: Charles D. Greskovich, William P. Minnear, Chester R. O'Clair, Erdogan O. Gurmen, Robert J. Riedner