Abstract: The disclosure relates to large area single crystal diamond (SCD) surfaces and substrates, and their methods of formation. Typical large area substrates can be at least about 25 mm, 50 mm, or 100 mm in diameter or square edge length, and suitable thicknesses can be about 100 ?m to 1000 ?m. The large area substrates have a high degree of crystallographic alignment. The large area substrates can be used in a variety of electronics and/or optics applications. Methods of forming the large area substrates generally include lateral and vertical growth of SCD on spaced apart and crystallographically aligned SCD seed substrates, with the individual SCD growth layers eventually merging to form a composite SCD layer of high quality and high crystallographic alignment. A diamond substrate holder can be used to crystallographically align the SCD seed substrates and reduce the effect of thermal stress on the formed SCD layers.

Abstract: The use of scintillator compositions having a cubic garnet structure for gamma detection in downhole oil and gas explorations is provided. Specifically, two primary compositions of interest are disclosed, Ca2LnHf2Al3O12 and NaLn2Hf2Al3O12, where Ln is Y, Gd, Tb, or La. Under gamma ray excitation, the electron-hole pairs produced in the garnet lattice structure are trapped by an activator ion to yield an efficient emission in the visible portion of the electromagnetic spectrum. The cubic garnet structure enables the use of these materials as ceramic scintillators with considerable advantages over related single crystals in various ways as disclosed herein, including reduction in cost and improvement in overall performance and durability.

Abstract: In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.

Abstract: Different types of gallium nitride (GaN) gemstones can be produced synthetically for crafting jewelry. With some examples, a GaN gemstone can include a crystal (such as a single crystal that is typically used in semiconductor devices or other types of electronic components, e.g., electronic components with optical properties). The crystal of the gemstone can be grown to be relatively pure and translucent GaN as well as cut and polished to have facets of a gemstone. Also, the crystal can include doped GaN—such as GaN doped with indium or aluminum. The doping of the GaN can be to an extent to produce a visibly discernable color (such a tint of blue).

Abstract: A preparation method for an yttrium aluminum garnet continuous fiber. The method prepares a spinnable precursor sol by utilizing an Al13 colloidal particles contained alumina sol, ?-AlOOH nano-dispersion, yttria sol, glacial acetic acid and polyvinylpyrrolidone, then prepares a gel continuous fiber by adopting a dry spinning technique, and carries out a heat treatment to obtain the yttrium aluminum garnet continuous fiber.

Abstract: A sintered body includes a solid solution containing cobalt and iron, with the balance being zirconia. The total content of cobalt in terms of CoO and iron in terms of Fe2O3 is more than 0.1 wt % and less than 3.0 wt %, and the proportion of cobalt regions larger than 5.5 ?m2 in an elemental map obtained using an electron probe microanalyzer is 25% or less.

Abstract: A method to transfer a layer of harder thin film substrate onto a softer, flexible substrate. In particular, the present invention provides a method to deposit a layer of sapphire thin film on to a softer and flexible substrate e.g. quartz, fused silica, silicon, glass, toughened glass, PET, polymers, plastics, paper and fabrics. This combination provides the hardness of sapphire thin film to softer flexible substrates.

Abstract: Provided is a gemstone growing device including: a first pipe; a second pipe disposed below the first pipe and connected to the first pipe; a third pipe configured to surround the second pipe; a mixed material input part disposed in the first pipe; an oxygen input pipe connected to the first pipe; a first hydrogen input pipe connected to the third pipe; and a muffle disposed below the third pipe.

Abstract: In various embodiments, growth of large, high-quality single crystals of aluminum nitride is enabled via a two-stage process utilizing two different crystalline seeds.

Abstract: In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.

Abstract: An ion source with an insertable target holder for holding a solid dopant material is disclosed. The insertable target holder includes a hollow interior into which the solid dopant material is disposed. The target holder has a porous surface at a first end, through which vapors from the solid dopant material may enter the arc chamber. The porous surface inhibits the passage of liquid or molten dopant material into the arc chamber. The target holder is also constructed such that it may be refilled with dopant material when the dopant material within the hollow interior has been consumed. The porous surface may be a portion of a perforated crucible, a portion of a perforated retention cap, or a porous insert.

Abstract: A black zirconia sintered body is obtained by processing and forming a powder for the black zirconia sintered body, and then sintering the same at a high temperature and normal pressure in the atmosphere. The powder for the black zirconia sintered body is prepared by a hydrothermal synthesis method using a soluble zirconium salt, a soluble yttrium salt and a color former as raw materials, wherein the molar ratio of the soluble zirconium salt, the soluble yttrium salt and the color former is 90-95:1-5:1-9. The black zirconia sintered body can be used in ceramic processes.

Abstract: A sapphire substrate flattening method including an ingot slicing step of slicing a sapphire single-crystal ingot to obtain a sapphire substrate, an annealing step of annealing the sapphire substrate, a wafer mounting step of mounting the sapphire substrate processed by the annealing step on a stage having a holding surface in the condition where a first surface of the sapphire substrate is in contact with the holding surface of the stage through a liquid resin, a resin curing step of curing the liquid resin, a first grinding step of grinding a second surface of the sapphire substrate opposite to the first surface, a resin removing step of removing the liquid resin cured on the first surface of the sapphire substrate, and a second grinding step of grinding the first surface of the sapphire substrate.

Abstract: A silicon carbide single crystal includes nitrogen as a dopant and aluminum as a dopant. A nitrogen concentration is 2×1019 cm?3 or higher and a ratio of an aluminum concentration to the nitrogen concentration is within a range of 5% to 40%.

Abstract: A single crystal CVD synthetic diamond material comprising: a total as-grown nitrogen concentration equal to or greater than 5 ppm, and a uniform distribution of defects, wherein said uniform distribution of defects is defined by one or more of the following characteristics: (i) the total nitrogen concentration, when mapped by secondary ion mass spectrometry (SIMS) over an area equal to or greater than 50×50 ?m using an analysis area of 10 ?m or less, possesses a point-to-point variation of less than 30% of an average total nitrogen concentration value, or when mapped by SIMS over an area equal to or greater than 200×200 ?m using an analysis area of 60 ?m or less, possesses a point-to-point variation of less than 30% of an average total nitrogen concentration value; (ii) an as-grown nitrogen-vacancy defect (NV) concentration equal to or greater than 50 ppb as measured using 77K UV-visible absorption measurements, wherein the nitrogen-vacancy defects are uniformly distributed through the synthetic single cryst

Abstract: Plasma assisted chemical vapor deposition is used to form single crystal diamond from a seed and methane. A susceptor is used to support the seed. Under certain conditions, crystalline grit is formed in addition to the diamond. The crystalline grit in one embodiment comprises mono crystals or twin crystals of carbon, each having its own nucleus. The crystals form in columns or tendrils to the side of the monocrystalline diamond or off a side of the susceptor. The crystals may have bonding imperfections which simulate doping, providing conductivity. They may also be directly doped. Many tools may be coated with the grit.

Abstract: The present invention provides a diamond simulant with greater similarity to a diamond than cubic zirconia. The present invention further provides a diamond simulant with durability, hardness, and optical features closer to that of a genuine diamond that previously afforded by other diamond simulants, such as cubic zirconia.

Abstract: The present invention provides a method for manufacturing a corundum substance, comprising steps of providing a corundum crystal having an a-axis and a growth along the a-axis; and obtaining the corundum substance from the corundum crystal in a particular direction.

Abstract: A colored translucent zirconia sintered body contains a transition metal element as a coloring agent, having a clear color tone and high transparency, and being excellent in both design properties and esthetic properties, and its production process. A colored translucent zirconia sintered body includes yttria in an amount of at least 6 mol % and at most 15 mol % and at least one member selected from the group consisting of iron, nickel, manganese, cobalt, chromium, copper and vanadium in an amount of at least 0.02 mol % and at most 0.5 mol % as calculated as oxides, and having a porosity of at most 1,000 ppm. The average crystal grain size is preferably at most 60 ?m.

Abstract: The present invention protects opals during processing from rhyolite nodules. An opal containing rhyolite nodule is soaked in a heated polyester resin, styrene (100-42-5) solution for 24 hours per 10 grams of nodule. The rhyolite nodule is dried and sawed into slabs, which are soaked in a heated polyester resin, styrene (100-42-5) solution. The soaked slabs are cut into pieces, cabochons are marked out, and the pieces are rough cut into pre forms. The pre forms are soaked in a heated polyester resin, styrene (100-42-5) solution, beneficially for 24 hours. The pre forms are dried and cut into cabochons, which are soaked (preferably for 24 hours) in a heated polyester resin, styrene (100-42-5) solution. The soaked cabochons are then dried, polished, and air cured.

Abstract: The object of the invention is to increase the yield of the HPHT—(High-Pressure High-Temperature)—Technology for production of synthetic diamonds and diamond-like materials as well as to achieve the continuous production of large amounts or quantities of synthetic diamonds with perfect or high quality. The object of the invention will be reached by methods and devices according to the present invention, wherein the method comprises the following steps: cultivation or collection of biomass, preparing and chemical modification of biomass preferably by (adding or enriching with) salt or salts containing at least one catalyst, incineration of biomass to ash, adding to ash modifiers including salt or salts containing at least one catalyst, HPHT-treatment of the resulting carbon-containing matrix and the isolation of the products after the HPHT-treatment.

Abstract: This invention provides a polycrystalline yttrium aluminum garnet (YAG) which is transparent in the visible and near infrared region. The invention also provides a method of manufacturing a transparent sintered YAG, which has nearly no porosity.

Abstract: A method for producing a sapphire single crystal, which includes: performing a sapphire single crystal growth step wherein a sapphire ingot, which is an ingot of sapphire single crystal, is produced (step 101); performing a subsequent ingot heating step wherein the sapphire ingot obtained in the sapphire single crystal growth step is heated (step 102); and performing a subsequent ingot processing step wherein the heated sapphire ingot is machined (step 103). In the ingot heating step, the sapphire ingot is heated in an atmosphere in which the oxygen concentration is increased to be equal to or higher than that in the air. Consequently, crystal defects in the ingot of sapphire single crystal produced by crystal growth are removed and the occurrence of cracks in the sapphire ingot during machining of the sapphire ingot is suppressed, thereby improving the yield of sapphire products obtained from the ingot.

Abstract: The method of making uniform low-stress crystals includes immersing a seed crystal held at a temperature under its melting point in a melt in a crucible and drawing it from the melt. The crystal and/or melt are rotated relative to each other and a planar phase boundary surface is maintained between them by detecting a surface temperature of the melt and/or crystal and controlling temperature fluctuations by increasing or decreasing the rotation speed. A low-stress crystal of formula: (A1-xDx)3Al5O12 wherein 0<x<1, A=Lu and D=Pr and/or Ce, is preferred. These crystals have an index of refraction uniformity ?n of <1 ppm and a stress birefringence of <1 nm/cm at 193 nm, so that they are suitable for making optical elements for DUV lithography.

Abstract: Proposed is a zirconium crucible used for melting an analytical sample in the pretreatment of the analytical sample, wherein the purity of the zirconium crucible is 99.99 wt % or higher. In light of the recent analytical technology demanded of fast and accurate measurement of high purity materials, the present invention provides a zirconium crucible for melting an analytical sample, a method of preparing such analytical sample, and a method of analysis that enables the analysis of high purity materials by inhibiting the inclusion of impurities from the crucible regardless of difference in the analysts and their skill.

Abstract: The embodiments of present invention provide method for imparting tone-controlled colors into colorless crystals such as gemstones or decorative objects by coating a atomically mixed thin film comprising of a color causing reagent and a toner material onto the surface of colorless gemstones or transparent crystals and subjecting them to a heat treatment to produce colors of desired shades in the crystals. The method employed is radiation-free, eco-friendly and avoid the use of any hazardous material. The method highlights that controlling the amount of toner material could easily control the shade of color induced by the colorant material. The coating of atomically mixed single film onto the surface of crystals results in reduction of diffusion time significantly at a reasonable temperature, to impart colors to crystals such as gemstones and colorless decorative objects.

Abstract: Disclosed herein is a material for altering electromagnetic radiation incident on the material. The material disclosed herein comprises carbon nanotubes having a length (L) that meets the following formula (1): L?½ ???(1) where ? is the wavelength of the electromagnetic radiation incident on the material. Also disclosed herein are methods of altering electromagnetic radiation, including mitigating, intensifying, or absorbing and re-transmitting electromagnetic radiation using the disclosed material.

Abstract: There is provided a method of forming a fluorite crystal and an exposure apparatus including this fluorite crystal. A method of manufacturing a device using the exposure apparatus is also provided.

Abstract: A corundum crystal formed body having a corundum crystal grown directly on a base material and a production process capable of producing the corundum crystal formed body easily at low costs. The a corundum crystal formed body has a platinum base material and a corundum crystal portion formed on the platinum base material. Further, the process for producing a corundum crystal formed body involves forming a corundum crystal on a platinum base material by a flux evaporation method of heating a sample containing a raw material and a flux to precipitate a crystal. The crystal is grown by use of flux evaporation as a driving force.

Abstract: Polycrystalline alumina (PCA) that has been doped with magnesium oxide is converted to sapphire by additionally doping the PCA with boron oxide and sintering to induce abnormal grain growth. The boron oxide may be added to an already formed green PCA ceramic shape by applying an aqueous boric acid solution to the green ceramic and heating the green ceramic in air to convert the boric acid to boron oxide.

Abstract: A synthetic fire opal having similar physical and chemical properties as natural fire opal. The synthetic fire opal is colored, hard, and transparent. The synthetic fire opal comprises SiO2 and water.

Abstract: An artificial corundum crystal which can be put into practical use at low costs, and a process for producing the same. The artificial corundum crystal contains a seed crystal and has at least one crystal face selected from a {113} face, a {012} face, a {104} face, a {110} face, a {101} face, a {116} face, a {211} face, a {122} face, a {214} face, a {100} face, a {125} face, a {223} face, a {131} face, and a {312} face. The process for producing the artificial corundum crystal an artificial corundum crystal having a hexagonally dipyramidal includes forming with a seed crystal by a flux evaporation method of heating a sample containing a raw material and a flux to precipitate a crystal and grow the crystal by use of flux evaporation as a driving force.

Abstract: The embodiments of the invention are directed to a synthetic ceramic comprising pyroxene-containing crystalline phase, a clast, and a glass phase, wherein at least a portion of the synthetic ceramic is plastically deformable in a certain temperature range. Other embodiments of the invention relate to a method of making a synthetic ceramic, comprising heating a green ceramic material to 900-1400° C., to a temperature sufficient to initiate partial melting of at least a portion of the green ceramic material, transferring the heated green ceramic material to a press, pressing the heated green ceramic material in a die at 1,000 to 10,000 psi, and transferring the heated, pressed green ceramic material to a furnace for cooling to form the synthetic ceramic.

Abstract: When produced as a single crystal ingot, a rare earth silicate single crystal 1 can be formed by cutting out from the single crystal ingot. The single crystal 1 has a crystal face F100 whose Miller indices can be determined by X-ray diffraction. The crystal face F100 is composed of a plurality of smooth partial region surfaces (for example, the partial region surface f100A and partial region surface f100B), the plurality of partial region surfaces each have an area detectable by X-ray diffraction, and the angles ? formed between the normal vectors of the plurality of partial region surfaces satisfy the following inequality: 0.1°???2.0°.

Abstract: An apparatus and method for fabricating a mount for an aluminum nitride (AlN) seed for single crystal aluminum nitride growth is provided. A holder having a proximal base and wall portions extending therefrom is fabricated from crystal growth crucible material, and defines an internal cavity. An AlN seed is placed within the holder, and placed within a nitrogen atmosphere at a temperature at or exceeding the melting point of a suitable material capable of forming a nitride ceramic by nitridation, such as aluminum. Pellets fabricated from this material are dropped into the holder and onto the seed, so that they melt and react with the nitrogen atmosphere to form a nitride ceramic. The seed is effectively molded in-situ with the ceramic, so that the ceramic and holder forms a closely conforming holder for the seed, suitable for single crystal AlN growth.

Abstract: A novel multipurpose mineral composition capable of emitting a large quantity of far infrared rays, negative ions and oxygen heat is manufactured by setting up an iron railing, an iron rod and an iron plate on a brazier, placing a tinfoil on the iron plate, and layering yellow soil, kaolin, sericite, and biomineral in sequence on the tinfoil, while inserting the tinfoil between the layers, loading a pulverized elvan in the furnace, pulverizing a mixed stone including 40 wt % of germanium, 15 wt % of tourmaline, 30 wt % of zeolite, and 15 wt % of franklinite, to the particle size under about 44 ?m, and loading the pulverized mixed stone in an internal furnace which is made by winding a copper plate with a tinfoil and placed on the plurality of layers of the furnace, heating the pulverized mixed stone at about 1,000° C. for about seven days into a lump, and repulverizing the lump.

Abstract: The present invention provides a process for imparting colors to colorless gemstone/minerals and enhancing properties of gemstone/minerals by coating a thin/thick film of a particular material or multiple films of different materials on polished gemstones/minerals to impart color in colorless stones and to enhance the color in paler stones, and to such gemstones/mineral obtained by the process.

Abstract: A gem identifying device using filtered transmitted light for use in distinguishing type-I colorless diamonds from type II colorless diamonds, and natural diamonds and gems from synthetic or treated diamonds and gems.

Abstract: In accordance with the present invention, there are provided methods for enhancing the color of gemstone(s) by subjecting a combination of a gemstone and at least one finely divided form of a selected treating agent including the element copper to a temperature in the range of about 700° C. up to about 1000° C., for a time period in the range of about 3 hours up to about 600 hours, under conditions suitable to enhance the color of the gemstone, wherein the treating agent consists of a finely divided form of the selected treating agent such as copper metal or copper oxide, and wherein said gemstone is topaz or sapphire and the enhanced color lies in the color spectrum of light yellow to red.

Abstract: This invention relates to a process for producing zeolite-bound high silica zeolites and the use of the zeolite-bound high silica zeolite produced by the process for hydrocarbon conversion. The process is carried out by forming an extrudable paste comprising a mixture of high silica zeolite in the hydrogen form, water, silica, and optionally an extrusion aid, extruding the extrudable paste to form silica-bound high silica zeolite extrudates, and then converting the silica of the binder to a zeolite binder. The zeolite-bound high silica zeolite produced by the process comprises high silica zeolite crystals that are bound together by zeolite binder crystals. The zeolite-bound high silica zeolite finds particular application in hydrocarbon conversion processes, e.g., catalytic cracking, alkylation, disproportionation of toluene, isomerization, and transalkylation reactions.

Abstract: A method in which a separate preformed optical material is suitably sized for easy handling, manipulation, and fabrication into a waveguide having a core (formed from the optical material) having transverse cross-sectional dimensions on the order of only tens of microns. The method may include a plurality of mechanical steps, e.g., lapping, polishing, and/or dicing, and bonding steps, e.g., attaching with adhesives. In one embodiment, the method includes the steps of providing an optical material, thinning and polishing the optical material to form a core comprising a plurality of longitudinally extending surfaces, providing a plurality of support substrates, and attaching the plurality of support substrates to the longitudinally extending surfaces of the core. The plurality of support substrates may be attached to the plurality of longitudinally extending surfaces of the optical material with an adhesive.

Abstract: The invention includes a novel synthetic gem comprising elements recovered from complete or partial human or animal remains. The invention also includes the process of manufacturing synthetic gems comprising carbon from a vertebrate by cremating human or animal remains to produce carbon in a particulate and gaseous form. The carbon is then filtered using a conventional filtering technique. The carbon and other elements are then purified and graphetized using a Halogen Purification technique. The gems are then created using conventional sublimation techniques. The synthetic gems may be faceted and polished utilizing conventional faceting and polishing techniques. The gems may also utilize a conventional marking system.

Abstract: A sintered ceramic for a scintillator having a composition represented by the general formula of Gd3-xCexAlySizGa5-y-zO12, wherein 0.001≦x≦0.05, 1≦y≦4, and 0.0015≦z≦0.03, is produced by mixing gadolinium oxide, aluminum oxide, gallium oxide, a cerium salt, a silicon compound and a fluorine compound in such proportions as to provide the above composition; calcining the resultant mixture at a temperature of 1400-1600° C.; disintegrating the resultant calcined body to ceramic powder; pressing the ceramic powder to provide a green body; and sintering the green body at a temperature of 1600-1700° C. in a non-oxidizing atmosphere at 5×104 Pa or more, and optionally further by hot isostatic pressing at a temperature of 1400-1600° C. in an argon atmosphere.

Abstract: A process for converting a polycrystalline ceramic material to a single crystal material includes the steps of doping at least a first portion of the polycrystalline ceramic material with a conversion-enhancing dopant having a +6 valence state in the unfired ceramic material and heating the polycrystalline ceramic material to convert at least a second portion of the polycrystalline ceramic material to a single crystal ceramic material. Preferably, the ceramic material is alumina and the conversion-enhancing dopant is molybdenum or tungsten.

Abstract: A gem identifying device using filtered transmitted light for use in distinguishing type-I colorless diamonds from type II colorless diamonds, and natural diamonds and gems from synthetic or treated diamonds and gems.

Abstract: A gem identifying device using filtered transmitted light for use in distinguishing type-I colorless diamonds from type II colorless diamonds, and natural diamonds and gems from synthetic or treated diamonds and gems.

Abstract: A method in which a separate preformed optical material is suitably sized for easy handling, manipulation, and fabrication into a waveguide having a core (formed from the optical material) having transverse cross-sectional dimensions on the order of only tens of microns. The method may include a plurality of mechanical steps, e.g., lapping, polishing, and/or dicing, and bonding steps, e.g., attaching with adhesives. In one embodiment, the method includes the steps of providing an optical material, thinning and polishing the optical material to form a core comprising a plurality of longitudinally extending surfaces, providing a plurality of support substrates, and attaching the plurality of support substrates to the longitudinally extending surfaces of the core. The plurality of support substrates may be attached to the plurality of longitudinally extending surfaces of the optical material with an adhesive.

Abstract: Provided are a heat-resistant glass fiber which has excellent heat resistance, which is also easy to spin and less expensive and which is suitable as an acoustic material for use in an automobile muffler, and a process for the production thereof. The heat-resistant glass fiber has a composition comprising, substantially by weight %, 56 to 58.5% of SiO2, 12 to 17% of Al2O3, 16 to 27% of CaO, 1 to 9% of MgO, 0 to 1% of Na2O and 0 to 1% of K2O as the entirety of the fiber and containing neither B2O3 nor F2, and has a surface layer portion made of a silicic glass having an SiO2 content of at least 90% by weight. The process comprises treating the surface of the above fiber having the above composition with a mineral acid, to produce the heat-resistant glass fiber.

Abstract: Large single crystals of silicon carbide are grown in a furnace sublimation system. The crystals are grown with compensating levels of p-type and n-type dopants (i.e., roughly equal levels of the two dopants) in order to produce a crystal that is essentially colorless. The crystal may be cut and fashioned into synthetic gemstones having extraordinary toughness and hardness, and a brilliance meeting or exceeding that of diamond.

Abstract: Simulated diamond gemstones are produced by faceting and polishing bulk single crystals of colorless synthetic aluminum nitride or aluminum nitride:silicon carbide alloys.