With Alkaline Earth Metal Compound Patents (Class 501/98.5)
  • Patent number: 10100413
    Abstract: A base material is composed of a metal or ceramics, and an aluminum nitride coating is formed on an outermost surface thereof. The aluminum nitride coating is formed by impact sintering and contains fine particles having a particle diameter of 1 ?m or less. A thickness of the aluminum nitride coating is no less than 10 ?m. A film density of the aluminum nitride coating is no less than 90% An area ratio of aluminum nitride particles whose particle boundaries are recognizable existing in a 20 ?m×20 ?m unit area of the aluminum nitride coating is 0% to 90% while an area ratio of aluminum nitride particles whose particle boundaries are unrecognizable is 10% to 100%. Such a component for a plasma apparatus having the aluminum nitride coating can provide a strong resistance to plasma attack and radical attack.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: October 16, 2018
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
    Inventors: Michio Sato, Takashi Hino, Masashi Nakatani
  • Patent number: 9403680
    Abstract: A method for producing sintered aluminum nitride granules includes a reduction nitridation step of carrying out the reduction nitridation of porous alumina granules at a temperature of 1400 to 1700° C. inclusive to produce porous aluminum nitride granules; and a sintering step of sintering the porous aluminum nitride granules, which are produced in the reduction nitridation step, at a temperature of 1580 to 1900° C. inclusive.
    Type: Grant
    Filed: February 4, 2013
    Date of Patent: August 2, 2016
    Assignee: Tokuyama Corporation
    Inventors: Yutaka Fukunaga, Yukihiro Kanechika
  • Patent number: 8791566
    Abstract: The present invention provides an aluminum nitride substrate and an aluminum nitride circuit board having excellent insulation characteristics and heat dissipation properties and having high strength, a semiconductor apparatus, and a method for manufacturing an aluminum nitride substrate.
    Type: Grant
    Filed: February 5, 2010
    Date of Patent: July 29, 2014
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
    Inventors: Haruhiko Yamaguchi, Yoshiyuki Fukuda
  • Patent number: 8597776
    Abstract: A ceramic material mainly contains magnesium, aluminum, oxygen, and nitrogen, in which the ceramic material has a magnesium-aluminum oxynitride phase serving as a main phase, wherein XRD peaks of the magnesium-aluminum oxynitride phase measured with CuK? radiation appear at at least 2?=47 to 50°.
    Type: Grant
    Filed: May 23, 2012
    Date of Patent: December 3, 2013
    Assignee: NGK Insulators, Ltd.
    Inventors: Morimichi Watanabe, Asumi Jindo, Yuji Katsuda, Yosuke Sato, Yoshinori Isoda
  • Patent number: 8597743
    Abstract: Provided is an aluminum nitride sintered body with high optical transmissivity and which has a smooth surface in the unpolished condition after firing. The aluminum nitride sintered body has an oxygen concentration of 450 ppm or less, a concentration of impurity elements excluding oxygen, nitrogen, and aluminum of 350 ppm or less, and an average crystal grain diameter of between 2 ?m and 20 ?m, and also has an arithmetic mean surface height Ra of 1 ?m or less and a maximum height Rz of 10 ?m or less in the unpolished condition after firing.
    Type: Grant
    Filed: August 4, 2006
    Date of Patent: December 3, 2013
    Assignee: Tokuyama Corporation
    Inventors: Yukihiro Kanechika, Masanobu Azuma
  • Patent number: 8541328
    Abstract: A ceramic material according to the present invention mainly contains magnesium, aluminum, oxygen, and nitrogen, the ceramic material has the crystal phase of a MgO—AlN solid solution in which aluminum nitride is dissolved in magnesium oxide, the crystal phase serving as a main phase. Preferably, XRD peaks corresponding to the (200) and (220) planes of the MgO—AlN solid solution measured with CuK? radiation appear at 2?=42.9 to 44.8° and 62.3 to 65.2°, respectively, the XRD peaks being located between peaks of cubic magnesium oxide and peaks of cubic aluminum nitride. More preferably, the XRD peak corresponding to the (111) plane appears at 2?=36.9 to 39°, the XRD peak being located between a peak of cubic magnesium oxide and a peak of cubic aluminum nitride.
    Type: Grant
    Filed: May 23, 2012
    Date of Patent: September 24, 2013
    Assignee: NGK Insulators, Ltd.
    Inventors: Morimichi Watanabe, Asumi Jindo, Yuji Katsuda, Yosuke Sato, Yoshinori Isoda
  • Publication number: 20120231945
    Abstract: A ceramic material according to the present invention mainly contains magnesium, aluminum, oxygen, and nitrogen, the ceramic material has the crystal phase of a MgO—AlN solid solution in which aluminum nitride is dissolved in magnesium oxide, the crystal phase serving as a main phase. Preferably, XRD peaks corresponding to the (200) and (220) planes of the MgO—AlN solid solution measured with CuK? radiation appear at 2?=42.9 to 44.8° and 62.3 to 65.2°, respectively, the XRD peaks being located between peaks of cubic magnesium oxide and peaks of cubic aluminum nitride. More preferably, the XRD peak corresponding to the (111) plane appears at 2?=36.9 to 39°, the XRD peak being located between a peak of cubic magnesium oxide and a peak of cubic aluminum nitride.
    Type: Application
    Filed: May 23, 2012
    Publication date: September 13, 2012
    Applicant: NGK Insulators, Ltd.
    Inventors: Morimichi WATANABE, Asumi Jindo, Yuji Katsuda, Yosuke Sato, Yoshinori Isoda
  • Publication number: 20120231243
    Abstract: A ceramic material mainly contains magnesium, aluminum, oxygen, and nitrogen, in which the ceramic material has a magnesium-aluminum oxynitride phase serving as a main phase, wherein XRD peaks of the magnesium-aluminum oxynitride phase measured with CuK? radiation appear at at least 2?=47 to 50°.
    Type: Application
    Filed: May 23, 2012
    Publication date: September 13, 2012
    Applicant: NGK Insulators, Ltd.
    Inventors: Morimichi Watanabe, Asumi Jindo, Yuji Katsuda, Yosuke Sato, Yoshinori Isoda
  • Patent number: 8231985
    Abstract: The aluminum-nitride-based composite material according to the present invention is an aluminum-nitride-based composite material that is highly pure with the content ratios of transition metals, alkali metals, and boron, respectively as low as 1000 ppm or lower, has AlN and MgO constitutional phases, and additionally contains at least one selected from the group consisting of a rare earth metal oxide, a rare earth metal-aluminum complex oxide, an alkali earth metal-aluminum complex oxide, a rare earth metal oxyfluoride, calcium oxide, and calcium fluoride, wherein the heat conductivity is in the range of 40 to 150 W/mK, the thermal expansion coefficient is in the range of 7.3 to 8.4 ppm/° C., and the volume resistivity is 1×1014 ?·cm or higher.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: July 31, 2012
    Assignee: NGK Insulators, Ltd.
    Inventors: Yoshimasa Kobayashi, Akira Goto, Yuji Katsuda, Naohito Yamada
  • Patent number: 8226865
    Abstract: The aluminum-nitride-based composite material according to the present invention is an aluminum-nitride-based composite material that is highly pure with the content ratios of transition metals, alkali metals, and boron, respectively as low as 1000 ppm or lower, has AlN and MgO constitutional phases, and additionally contains at least one selected from the group consisting of a rare earth metal oxide, a rare earth metal-aluminum complex oxide, an alkali earth metal-aluminum complex oxide, a rare earth metal oxyfluoride, calcium oxide, and calcium fluoride, wherein the heat conductivity is in the range of 40 to 150 W/mK, the thermal expansion coefficient is in the range of 7.3 to 8.4 ppm/° C., and the volume resistivity is 1×1014 ?·cm or higher.
    Type: Grant
    Filed: October 19, 2009
    Date of Patent: July 24, 2012
    Assignee: NGK Insulators, Ltd.
    Inventors: Yoshimasa Kobayashi, Akira Goto, Yuji Katsuda, Naohito Yamada
  • Patent number: 8148283
    Abstract: A high-purity aluminum nitride sintered body is provided by efficiently removing oxides contained in a raw material powder in producing an aluminum nitride sintered body and preventing composite oxide produced by reaction of oxides contained in the raw material powder with a sintering aid from remaining in the aluminum nitride sintered body. The above sintered body is achieved by an aluminum nitride sintered body having a concentration of residual oxygen excluding attached oxygen of 350 ppm or less.
    Type: Grant
    Filed: February 4, 2008
    Date of Patent: April 3, 2012
    Assignee: Tokuyama Corporation
    Inventors: Yukihiro Kanechika, Masanobu Azuma
  • Publication number: 20120052326
    Abstract: The aluminum-nitride-based composite material according to the present invention is an aluminum-nitride-based composite material that is highly pure with the content ratios of transition metals, alkali metals, and boron, respectively as low as 1000 ppm or lower, has AlN and MgO constitutional phases, and additionally contains at least one selected from the group consisting of a rare earth metal oxide, a rare earth metal-aluminum complex oxide, an alkali earth metal-aluminum complex oxide, a rare earth metal oxyfluoride, calcium oxide, and calcium fluoride, wherein the heat conductivity is in the range of 40 to 150 W/mK, the thermal expansion coefficient is in the range of 7.3 to 8.4 ppm/° C., and the volume resistivity is 1×1014 ?·cm or higher.
    Type: Application
    Filed: November 3, 2011
    Publication date: March 1, 2012
    Applicant: NGK Insulators, Ltd.
    Inventors: Yoshimasa Kobayashi, Akira Goto, Yuji Katsuda, Naohito Yamada
  • Patent number: 7737065
    Abstract: The present invention relates to a process of producing an aluminum nitride sintered body which satisfies both high thermal conductivity and reduction in the shrinkage factor at the time of sintering. The aluminum nitride sintered body is a sintered body of a powder mixture containing an aluminum nitride powder and a sintering aid, characterized by having a thermal conductivity of at least 190 W/m·K and a shrinkage factor represented by the percentage of {(dimensions of the molded body before sintering)?(dimensions of the sintered body after sintering)}/(dimensions of the molded body before sintering) of at most 15%.
    Type: Grant
    Filed: August 10, 2009
    Date of Patent: June 15, 2010
    Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
    Inventors: Takeshi Gotoh, Hiroshi Murata, Kohki Ichikawa
  • Publication number: 20100104892
    Abstract: The aluminum-nitride-based composite material according to the present invention is an aluminum-nitride-based composite material that is highly pure with the content ratios of transition metals, alkali metals, and boron, respectively as low as 1000 ppm or lower, has AlN and MgO constitutional phases, and additionally contains at least one selected from the group consisting of a rare earth metal oxide, a rare earth metal-aluminum complex oxide, an alkali earth metal-aluminum complex oxide, a rare earth metal oxyfluoride, calcium oxide, and calcium fluoride, wherein the heat conductivity is in the range of 40 to 150 W/mK, the thermal expansion coefficient is in the range of 7.3 to 8.4 ppm/° C., and the volume resistivity is 1×1014 ?·cm or higher.
    Type: Application
    Filed: October 19, 2009
    Publication date: April 29, 2010
    Applicant: NGK Insulators, Ltd.
    Inventors: Yoshimasa KOBAYASHI, Akira Goto, Yuji Katsuda, Naohito Yamada
  • Patent number: 7632768
    Abstract: A ceramics sintered body improved in corrosion resistance to a molten metal and a method for producing such a ceramics sintered body. The ceramics sintered body includes boron nitride, titanium diboride, a calcium compound and titanium nitride and having a relative density of 92% or more, wherein the content of the calcium compound in terms of CaO is from 0.05 to 0.8% by weight, and a peak intensity by X-ray diffraction of the (200) plane derived from titanium nitride is from 0.06 to 0.15 relative to a peak intensity of the (002) plane of BN. Further, a method for producing a ceramics sintered body, which is applicable to the ceramics sintered body, and an exothermic body for metal vapor deposition constituted by the ceramics sintered body are also disclosed.
    Type: Grant
    Filed: December 10, 2004
    Date of Patent: December 15, 2009
    Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
    Inventors: Hiroshi Yokota, Fumio Tokunaga, Kentaro Iwamoto, Masamitu Kimura, Shoujiro Watanabe
  • Patent number: 7629282
    Abstract: A conductive channel formed of an (Sm, Ce)Al11O18 is interconnected in grain boundaries of aluminum nitride (AlN) particles, thereby reducing the temperature dependency of the volume resistivity of an AlN sintered body formed therefrom. At the same time, a solid solution of the AlN particles is formed with at least one of C and Mg, to prevent the conductive channel from moving into the AlN particles, thereby maintaining a high volume resistivity within the AlN particles even at a high temperature.
    Type: Grant
    Filed: March 14, 2007
    Date of Patent: December 8, 2009
    Assignee: NGK Insulators, Ltd.
    Inventors: Jun Yoshikawa, Yoshimasa Kobayashi, Naohito Yamada
  • Patent number: 7605102
    Abstract: An aluminum nitride ceramic including aluminum nitride grains and grain boundary phases comprises a grain boundary phase-rich layer including more amount of the grain boundary phases in a surface layer of the aluminum nitride ceramic than in an inside of the aluminum nitride ceramic. The grain boundary phases in the grain boundary phase-rich layer include at least one of rare earth element and alkali earth element.
    Type: Grant
    Filed: February 21, 2007
    Date of Patent: October 20, 2009
    Assignee: NGK Insulators, Ltd.
    Inventors: Yoshimasa Kobayashi, Naohito Yamada, Toru Hayase
  • Patent number: 7592280
    Abstract: An aluminum nitride sintered body is provided, wherein an average crystal grain diameter is 2.0 ?m or less, a crystalline phase detected by an X-ray diffractometer is an AlN phase only or an AlN phase and an AlON phase only, and SiO2 or MgO is present in an amount of more than 0.05 wt % to less than 1 wt %.
    Type: Grant
    Filed: March 14, 2007
    Date of Patent: September 22, 2009
    Assignee: NGK Insulators, Ltd.
    Inventors: Yoshimasa Kobayashi, Naohito Yamada
  • Patent number: 7553469
    Abstract: To provide an aluminum nitride powder and an aluminum nitride sintered body which satisfy both high thermal conductivity of an aluminum nitride sintered body and reduction in the shrinkage factor at the time of sintering. An aluminum nitride powder characterized in that it has local maximum values in size in regions of from 3 to 15 ?m, from 0.5 to 1.5 ?m and 0.3 ?m or less, the proportions of particles in the respective regions are from 40 to 70%, from 25 to 40% and from 0.5 to 20% on the volume basis, and it has an oxygen amount of from 0.5 to 1.5 mass %. An aluminum nitride sintered body which is a sintered body of a powder mixture containing the above aluminum nitride powder and a sintering aid, characterized by having a thermal conductivity of at least 190 W/m·K and a shrinkage factor represented by the percentage of {(dimensions of the molded body before sintering)?(dimensions of the sintered body after sintering)}/(dimensions of the molded body before sintering) of at most 15%.
    Type: Grant
    Filed: March 29, 2005
    Date of Patent: June 30, 2009
    Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
    Inventors: Takeshi Gotoh, Hiroshi Murata, Kohki Ichikawa
  • Patent number: 7553788
    Abstract: An aluminum nitride sintered body having resistance to plasma gas and high thermal conduction and having excellent optical properties. The aluminum nitride sintered body of the present invention is characterized in that the proportion of positrons which are annihilated within a period of 180 ps (picoseconds) in the aluminum nitride crystal, as determined in the defect analysis using a positron annihilation method, is not less than 90%, and the sintered body preferably has a thermal conductivity of not less than 200 W/mK.
    Type: Grant
    Filed: August 13, 2008
    Date of Patent: June 30, 2009
    Assignee: Tokuyama Corporation
    Inventors: Yukihiro Kanechika, Masanobu Azuma
  • Patent number: 7473661
    Abstract: Disclosed is a method for preparing a high dense aluminum nitride (AlN) sintered body. The method includes the steps of preparing powders for the AlN sintered body comprising Y2O3 of 0.1 to 15 wt %, TiO2 of 0.01 to 5 wt % and MgO of 0.1 to 10 wt %, and obtaining the AlN sintered body with a volume resistivity of 1×1015 ?cm or more at a normal temperature and a relative density of 99% or more. The sintered body is obtained by sintering the powders and then cooling the sintered powders or sintering the powders and then cooling the sintered powders with annealing the sintered powders during the cooling.
    Type: Grant
    Filed: January 18, 2008
    Date of Patent: January 6, 2009
    Assignee: Komico Ltd.
    Inventors: Min-Woo Lee, Hyung Suk Ahn, Sung-Min Lee
  • Publication number: 20080300128
    Abstract: An aluminum nitride sintered body having resistance to plasma gas and high thermal conduction and having excellent optical properties. The aluminum nitride sintered body of the present invention is characterized in that the proportion of positrons which are annihilated within a period of 180 ps (picoseconds) in the aluminum nitride crystal, as determined in the defect analysis using a positron annihilation method, is not less than 90%, and the sintered body preferably has a thermal conductivity of not less than 200 W/mK.
    Type: Application
    Filed: August 13, 2008
    Publication date: December 4, 2008
    Applicant: TOKUYAMA CORPORATION
    Inventors: Yukihiro Kanechika, Masanobu Azuma
  • Patent number: 7422992
    Abstract: An aluminum nitride sintered body is provided, which essentially contains aluminum nitride, 0.4 to 2.5 wt % magnesium and 2.0 to 5.0 wt % yttrium. The aluminum nitride sintered body has an average particle size of not more than 1.0 ?m.
    Type: Grant
    Filed: March 17, 2006
    Date of Patent: September 9, 2008
    Assignee: NGK Insulators, Ltd.
    Inventors: Naomi Teratani, Naohito Yamada
  • Publication number: 20080200326
    Abstract: The present invention relates to an aluminum nitride sintered body which satisfies both high thermal conductivity and reduction in the shrinkage factor at the time of sintering. The aluminum nitride sintered body is a sintered body of a powder mixture containing an aluminum nitride powder and a sintering aid, characterized by having a thermal conductivity of at least 190 W/m·K and a shrinkage factor represented by the percentage of {(dimensions of the molded body before sintering)-(dimensions of the sintered body after sintering)}/(dimensions of the molded body before sintering) of at most 15%.
    Type: Application
    Filed: April 18, 2008
    Publication date: August 21, 2008
    Applicant: Denki Kagaku Kogyo Kabushiki Kaisha
    Inventors: Takeshi Gotoh, Hiroshi Murata, Kohki Ichikawa
  • Patent number: 7375045
    Abstract: The present invention provide a high dense aluminum nitride sintered body, a preparing method thereof, and a member for manufacturing semiconductor using the sintered body which has excellent leakage current characteristic, enough adsorbing property, good detachment property and excellent thermal conductivity and so can be applied to even a member for manufacturing semiconductor requiring high volume resistivity like the coulomb type electrostatic chucks as well as the Johnsen-Rahbek type electrostatic chucks.
    Type: Grant
    Filed: April 17, 2006
    Date of Patent: May 20, 2008
    Assignee: Komico Ltd.
    Inventors: Min-Woo Lee, Hyung Suk Ahn, Sung-Min Lee
  • Publication number: 20080076658
    Abstract: [Object] It is an object of the present invention to provide an aluminum nitride sintered body having resistance to plasma gas and high thermal conduction and having excellent optical properties. [Solution means] The aluminum nitride sintered body of the present invention is characterized in that the proportion of positrons which are annihilated within a period of 180 ps (picoseconds) in the aluminum nitride crystal, as determined in the defect analysis using a positron annihilation method, is not less than 90%, and the sintered body preferably has a thermal conductivity of not less than 200 W/mK.
    Type: Application
    Filed: September 26, 2006
    Publication date: March 27, 2008
    Applicant: Tokuyama Corporation
    Inventors: Yukihiro Kanechika, Masanobu Azuma
  • Patent number: 7319080
    Abstract: An aluminum nitride sintered body comprising crystal grains of an average grain size (D50) of 0.1 to 2.5 ?m, and having a pore area ratio of not larger than 1×10?7, a pore density of not larger than 0.05 pores/mm2 of pores having diameters of not smaller than 1 ?m, and a Vickers' hardness in a range of 14 to 17 GPa. The aluminum nitride sintered body has a very small pore density despite of its relatively small crystal grain size, features excellent strength and mirror machinability, and is particularly useful as a material for circuit substrates on which fine wiring patterns are formed.
    Type: Grant
    Filed: September 17, 2003
    Date of Patent: January 15, 2008
    Assignee: Tokuyama Corporation
    Inventors: Yukihiro Kanechika, Toshikatsu Miki, Ayako Kai
  • Publication number: 20070225152
    Abstract: The present inventors have found that an aluminum nitride sintered body excellent in flatness by polishing can be provided by improving the strength of a grain boundary; at the same time, by adding SiO2 or MgO, which forms a solid solution with aluminum nitride during a sintering process, with the result that it is no longer present as a grain boundary phase, in a small amount to an aluminum nitride powder, followed by sintering the aluminum nitride powder at a low temperature from more than 160° C. to less than 1750° C.
    Type: Application
    Filed: March 14, 2007
    Publication date: September 27, 2007
    Applicant: NGK Insulators, Ltd.
    Inventors: Yoshimasa Kobayashi, Naohito Yamada
  • Patent number: 7211216
    Abstract: An aluminum nitride ceramic including aluminum nitride grains and grain boundary phases comprises a grain boundary phase-rich layer including more amount of the grain boundary phases in a surface layer of the aluminum nitride ceramic than in an inside of the aluminum nitride ceramic. The grain boundary phases in the grain boundary phase-rich layer include at least one of rare earth element and alkali earth element.
    Type: Grant
    Filed: June 15, 2005
    Date of Patent: May 1, 2007
    Assignee: NGK Insulators, Ltd.
    Inventors: Yoshimasa Kobayashi, Naohito Yamada, Toru Hayase
  • Patent number: 7122490
    Abstract: A novel aluminum nitride material having a low room temperature volume resistivity is provided. The aluminum nitride material has an aluminum nitride main component and includes at least 0.03 mol % of europium oxide. The aluminum nitride material has an aluminum nitride phase and an europium-aluminum composite oxide phase. An aluminum nitride material also provided having an aluminum nitride main component, wherein a total content of europium oxide and samarium oxide is at least 0.09 mol %. The aluminum nitride material has an aluminum nitride phase and a composite oxide phase containing at least europium and aluminum.
    Type: Grant
    Filed: February 24, 2004
    Date of Patent: October 17, 2006
    Assignee: NGK Insulators, Ltd.
    Inventors: Yoshimasa Kobayashi, Toru Hayase, Naomi Teratani, Jun Yoshikawa, Naohito Yamada
  • Patent number: 7015166
    Abstract: An objective of the present invention is to provide an aluminum nitride sintered body making it possible to keep a volume resistivity of 108 ?·cm or more, and guarantee covering-up capability, a large radiant heat amount and measurement accuracy with a thermoviewer. A carbon-containing aluminum nitride sintered body of the present invention of the present invention comprising: carbon whose peak cannot be detected on its X-ray diffraction chart or whose peak is below its detection limit thereon; in a matrix made of aluminum nitride.
    Type: Grant
    Filed: June 28, 2004
    Date of Patent: March 21, 2006
    Assignee: Ibiden Co., Ltd.
    Inventors: Yasutaka Ito, Yasuji Hiramatsu
  • Patent number: 6982125
    Abstract: An electrostatic chuck is provided which includes a ceramic body comprising aluminum nitride (AlN), and at least one electrode in the ceramic body. According to a particular feature of this embodiment, the aluminum nitride has a resistivity ratio ?10V/?500V less than about 5. In this regard, ?10V represents the resistivity of the electrostatic chuck at 10 applied volts while ?500V represents the resistivity of the AlN material at 500 applied volts.
    Type: Grant
    Filed: December 23, 2002
    Date of Patent: January 3, 2006
    Assignee: Saint-Gobain Ceramics & Plastics, Inc.
    Inventors: Brian C. LaCourse, Morteza Zandi, Ara Vartabedian
  • Patent number: 6900149
    Abstract: An objective of the present invention is to provide an aluminum nitride sintered body making it possible to keep a volume resistivity of 108 ?•cm or more, and guarantee covering-up capability, a large radiant heat amount and measurement accuracy with a thermoviewer. A carbon-containing aluminum nitride sintered body of the present invention of the present invention comprising: carbon whose peak cannot be detected on its X-ray diffraction chart or whose peak is below its detection limit thereon: in a matrix made of aluminum nitride.
    Type: Grant
    Filed: May 12, 2000
    Date of Patent: May 31, 2005
    Assignee: Ibiden Co., Ltd.
    Inventors: Yasutaka Ito, Yasuji Hiramatsu
  • Publication number: 20040242400
    Abstract: An objective of the present invention is to provide an aluminum nitride sintered body making it possible to keep a volume resistivity of 108&OHgr;·cm or more, and guarantee covering-up capability, a large radiant heat amount and measurement accuracy with a thermoviewer. A carbon-containing aluminum nitride sintered body of the present invention of the present invention comprising: carbon whose peak cannot be detected on its X-ray diffraction chart or whose peak is below its detection limit thereon; in a matrix made of aluminum nitride.
    Type: Application
    Filed: June 28, 2004
    Publication date: December 2, 2004
    Applicant: IBIDEN CO., LTD.
    Inventors: Yasutaka Ito, Yasuji Hiramatsu
  • Publication number: 20040126598
    Abstract: An aluminum nitride sintered body produced by sintering under pressure of a powder composition comprising aluminum nitride and 5 to 30% by weight of at least one sintering aid selected from the group consisting of Nd, Sm, Eu, Er, Dy, Gd, Pr and Yb, per 100% by weight of the powders of aluminum nitride and the sintering aid, wherein the amount of the sintering aid is a conversion value as oxides of the elements, the sintering body that has been subjected to mirror-polishing having a surface roughness R max of 0.2 &mgr;m or less and a thermal conductivity of 200 (W/mK) or more.
    Type: Application
    Filed: July 30, 2003
    Publication date: July 1, 2004
    Applicant: Hitachi, Ltd.
    Inventors: Shigeru Tanaka, Akio Chiba, Yasutaka Suzuki, Kazuhiro Hirose, Tamihito Kawahigashi
  • Patent number: 6458732
    Abstract: A dry refractory composition having superior insulating value. The dry refractory composition also may have excellent resistance to molten metals and slags. The composition includes filler lightweight material, which may be selected from perlite, vermiculite, expanded shale, expanded fireclay, expanded alumina silica hollow spheres, bubble alumina, sintered porous alumina, alumina spinel insulating aggregate, calcium alumina insulating aggregate, expanded mulllite, cordierite, and anorthite, and matrix material, which may be selected from calcined alumina, fused alumina, sintered magnesia, fused magnesia, silica fume, fused silica, silicon carbide, boron carbide, titanium diboride, zirconium boride, boron nitride, aluminum nitride, silicon nitride, Sialon, titanium oxide, barium sulfate, zircon, a sillimanite group mineral, pyrophyllite, fireclay, carbon, and calcium fluoride.
    Type: Grant
    Filed: June 7, 1999
    Date of Patent: October 1, 2002
    Assignee: Allied Mineral Products, Inc.
    Inventors: Douglas K. Doza, John Y. Liu
  • Patent number: 6432855
    Abstract: A ceramic material which is an orthorhombic boride of the general formula: AlMgB14:X, with X being a doping agent. The ceramic is a superabrasive, and in most instances provides a hardness of 40 GPa or greater.
    Type: Grant
    Filed: May 23, 2000
    Date of Patent: August 13, 2002
    Assignee: Iowa State University Reseach Foundation, Inc,.
    Inventors: Bruce A. Cook, Joel L. Harringa, Alan M. Russell
  • Patent number: 6428741
    Abstract: Provided is an aluminum nitride sintered body excellent in thermal shock resistance and strength and applicable to a radiating substrate for a power module or a jig for semiconductor equipment employed under a strict heat cycle. An aluminum nitride sintered body obtained with a sintering aid of a rare earth element and an alkaline earth metal element contains 0.01 to 5 percent by weight of an alkaline earth metal element compound in terms of an oxide and 0.01 to 10 percent by weight of a rare earth element compound in terms of an oxide, and the amount of carbon remaining in the sintered body is controlled to 0.005 to 0.1 percent by weight, thereby suppressing grain growth and improving thermal shock resistance and strength of the sintered body.
    Type: Grant
    Filed: February 13, 2001
    Date of Patent: August 6, 2002
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yasuhisa Yushio, Hirohiko Nakata, Kazutaka Sasaki, Masuhiro Natsuhara, Motoyuki Tanaka, Yasuhiro Murase
  • Patent number: 6403510
    Abstract: An aluminum nitride sintered body with high heat conductivity and high strength as well as a method of inexpensively manufacturing such an aluminum nitride sintered body at a low temperature are provided. The aluminum nitride sintered body is manufactured by adding a compound of at least one type of rare earth element (R) selected from La, Ce, Pr, Sm; and Eu, Y compound, Ca compound, and Al compound to an AlN powder and sintering the resulting mixture at a temperature of 1550° C. to 1750° C. The content of oxygen forming Al2O3 existing in an aluminate with rare earth element (R), Y and Ca and oxygen forming independently existing Al2O3 is calculated as 0.01 to 5.0% by weight, heat conductivity is 166 to 200 W/mK, and bending strength is at least 300 MPa.
    Type: Grant
    Filed: August 17, 2000
    Date of Patent: June 11, 2002
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Akira Kuibira, Hirohiko Nakata, Kenjiro Higaki, Kazutaka Sasaki, Takashi Ishii
  • Publication number: 20010053739
    Abstract: Dense, high thermal conductivity AIN ceramic is described (along with a method of manufacture) which can be used in microwave tubes as collector rods, Helix support rods, T rods, etc. instead of BeO ceramic. High thermal conductivity, vacuum compatibility, low dielectric loss tangent at microwave frequencies, high electrical resistivity and dielectric strength are AIN properties allowing the material to be used in traveling wave tubes, particle accelerators or as laser bores and in other similar applications. These materials allow the replacement of BeO, which is a toxic material with diminishing availability in the United States and on the world market.
    Type: Application
    Filed: October 18, 1999
    Publication date: December 20, 2001
    Inventor: BILJANA MIKIJELJ
  • Patent number: 6306528
    Abstract: Electronic packages made with a high area percent coverage of blanket metal may be prone to certain kinds of ceramic defects. In aluminum nitride, these defects may be related to decomposition of the liquid sintering aid. In this experiment, unique additions to the metallization prevented the formation of certain ceramic defects. Our approach involves a unique composition used in an existing process.
    Type: Grant
    Filed: May 13, 1999
    Date of Patent: October 23, 2001
    Assignee: International Business Machines Corporation
    Inventors: Richard A. Bates, Carla N. Cordero, Benjamin V. Fasano, David B. Goland, Robert Hannon, Lester W. Herron, Gregory M. Johnson, Andrew Reitter, Subhash L. Shinde, Lisa Studzinski
  • Publication number: 20010016551
    Abstract: Provided is an aluminum nitride sintered body excellent in thermal shock resistance and strength and applicable to a radiating substrate for a power module or a jig for semiconductor equipment employed under a strict heat cycle. An aluminum nitride sintered body obtained with a sintering aid of a rare earth element and an alkaline earth metal element contains 0.01 to 5 percent by weight of an alkaline earth metal element compound in terms of an oxide and 0.01 to 10 percent by weight of a rare earth element compound in terms of an oxide, and the amount of carbon remaining in the sintered body is controlled to 0.005 to 0.1 percent by weight, thereby suppressing grain growth and improving thermal shock resistance and strength of the sintered body.
    Type: Application
    Filed: February 13, 2001
    Publication date: August 23, 2001
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Yasuhisa Yushio, Hirohiko Nakata, Kazutaka Sasaki, Masuhiro Natsuhara, Motoyuki Tanaka, Yasuhiro Murase
  • Patent number: 6271163
    Abstract: An aluminum nitride sintered body has excellent thermal shock resistance and strength, and is applicable to a radiating substrate for a power module or a jig for semiconductor equipment employed under a strict heat cycle. The aluminum nitride sintered body contains 0.01 to 5 percent by weight of an alkaline earth metal element compound in terms of an oxide and 0.01 to 10 percent by weight of a rare earth element compound in terms of an oxide, respectively as sintering aids, and a residual amount of carbon in a range from 0.005 to 0.1 percent by weight, thereby suppressing grain growth and improving thermal shock resistance and strength of the sintered body.
    Type: Grant
    Filed: July 20, 1999
    Date of Patent: August 7, 2001
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yasuhisa Yushio, Hirohiko Nakata, Kazutaka Sasaki, Masuhiro Natsuhara, Motoyuki Tanaka, Yasuhiro Murase
  • Patent number: 6174614
    Abstract: A sintered aluminum nitride body comprising aluminum nitride as the main component and containing a calcium compound, an ytterbium compound, and a neodymium compound. Due to the use of the above calcium-yttrium-neodymium ternary sintering aid, the sintered aluminum nitride body can be obtained by firing a compact of the raw material powder at a low temperature after degreasing the compact without cracking and has evenness of in color, strength and thermal conductivity. The sintered aluminum nitride body provides an inexpensive, high-quality metallized substrate for electronic parts by forming a high-melting metallizing layer of W and/or Mo. Onto the aluminum nitride body, an Ag metallizing layer including oxides of Zn and Cu or an Ag-Pd metallilzing layer including oxides of B, Pb, Cr and Ca and, if necessary, further an insulating vitreous layer may be formed.
    Type: Grant
    Filed: October 26, 1998
    Date of Patent: January 16, 2001
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yasuhisa Yushio, Hirohiko Nakata, Kazutaka Sasaki, Masuhiro Natsuhara, Motoyuki Tanaka