Aluminum Nitride Containing (ain) Patents (Class 501/98.4)
  • Patent number: 10593873
    Abstract: A device for switchably influencing electromagnetic radiation includes a phase change material and an optically responsive structure. The phase change material is switchable between at least a first state and a second state. The first state and the second state have different electrical and/or magnetic properties. The optically responsive structure is in contact with the phase change material and has at least a first nanostructure and a second nanostructure. The first nanostructure is being different from the second nanostructure. The first nanostructure is optically responsive at a predetermined electromagnetic wavelength when the phase change material is in its first state, and non-responsive at the predetermined wavelength when the phase change material is in its second state.
    Type: Grant
    Filed: May 30, 2018
    Date of Patent: March 17, 2020
    Assignee: BADEN-WURTTEMBERG STIFTUNG GGMBH
    Inventors: Harald Giessen, Xinghui Yin
  • Patent number: 9202718
    Abstract: An electrostatic chuck 1A includes a susceptor 11A having an adsorption face 11a of adsorbing a semiconductor, and an electrostatic chuck electrode 4 embedded in the susceptor. The susceptor 11A includes a plate shaped main body 3 and a surface corrosion resistant layer 2 including the adsorption face 2. The surface corrosion resistant layer 2 is made of a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The ceramic material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2?=47 to 50° by CuK? X-ray.
    Type: Grant
    Filed: April 17, 2013
    Date of Patent: December 1, 2015
    Assignee: NGK Insulators, Ltd.
    Inventors: Kenichiro Aikawa, Morimichi Watanabe, Asumi Jindo, Yuji Katsuda, Yosuke Sato, Yoshinori Isoda
  • Patent number: 9202986
    Abstract: According to one embodiment, a semiconductor light emitting device includes first and second conductive layers, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting part. The second semiconductor layer is provided between the first conductive layer and the first semiconductor layer. The light emitting part is provided between the first and second semiconductor layers. The second conductive layer is in contact with the second semiconductor layer and the first conductive layer between the second semiconductor layer and the first conductive layer. The first and second conductive layers are transmittable to light emitted from the light emitting part. The first conductive layer includes a polycrystal having a first average grain diameter. The second conductive layer includes a polycrystal having a second average grain diameter of 150 nanometers or less and smaller than the first average grain diameter.
    Type: Grant
    Filed: November 25, 2013
    Date of Patent: December 1, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshihide Ito, Toshiyuki Oka, Shinya Nunoue
  • Patent number: 9190189
    Abstract: Disclosed is an aluminum nitride substrate for a circuit board, the substrate having aluminum nitride crystal grains with an average grain size of 2 to 5 ?m and a thermal conductivity of at least 170 W/m·K. The aluminum nitride substrate does not include a dendritic grain boundary phase and has a breakdown voltage of at least 30 kV/mm at 400° C. Also provided is a method for producing the aluminum nitride substrate, including the steps of heating a raw material containing an aluminum nitride powder to 1500° C. at a pressure of at most 150 Pa, then increasing and holding the temperature at 1700 to 1900° C. in a pressurized atmosphere of at least 0.4 MPa using a non-oxidizing gas, then cooling to 1600° C. at a cooling rate of at most 10° C./min.
    Type: Grant
    Filed: May 24, 2011
    Date of Patent: November 17, 2015
    Assignee: DENKI KAGAKU KOGYO KABUSHIKI KAISHA
    Inventors: Yusaku Harada, Katsunori Terano, Takeshi Gotoh
  • Patent number: 8791566
    Abstract: The present invention provides an aluminum nitride substrate and an aluminum nitride circuit board having excellent insulation characteristics and heat dissipation properties and having high strength, a semiconductor apparatus, and a method for manufacturing an aluminum nitride substrate.
    Type: Grant
    Filed: February 5, 2010
    Date of Patent: July 29, 2014
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
    Inventors: Haruhiko Yamaguchi, Yoshiyuki Fukuda
  • Patent number: 8609562
    Abstract: Disclosed is a method of producing a plate brick, which comprises: adding an organic binder to a refractory raw material mixture containing aluminum and/or an aluminum alloy; kneading them; forming the kneaded mixture into a shaped body; and burning the shaped body in a nitrogen gas atmosphere at a temperature of 1000 to 1400° C., wherein: when a temperature of a furnace atmosphere is 300° C. or more, the atmosphere is set to a nitrogen gas atmosphere; and when the temperature of the furnace atmosphere is 1000° C. or more, an oxygen gas concentration in the atmosphere is maintained at 100 volume ppm or less, and a sum of a carbon monoxide gas concentration and a carbon dioxide gas concentration is maintained at 1.0 volume % or less.
    Type: Grant
    Filed: December 18, 2009
    Date of Patent: December 17, 2013
    Assignee: Krosakiharima Corporation
    Inventors: Keiichiro Akamine, Katsumi Morikawa, Joki Yoshitomi, Tsuneo Kayama
  • Patent number: 8597743
    Abstract: Provided is an aluminum nitride sintered body with high optical transmissivity and which has a smooth surface in the unpolished condition after firing. The aluminum nitride sintered body has an oxygen concentration of 450 ppm or less, a concentration of impurity elements excluding oxygen, nitrogen, and aluminum of 350 ppm or less, and an average crystal grain diameter of between 2 ?m and 20 ?m, and also has an arithmetic mean surface height Ra of 1 ?m or less and a maximum height Rz of 10 ?m or less in the unpolished condition after firing.
    Type: Grant
    Filed: August 4, 2006
    Date of Patent: December 3, 2013
    Assignee: Tokuyama Corporation
    Inventors: Yukihiro Kanechika, Masanobu Azuma
  • Publication number: 20130296158
    Abstract: The present invention generally relates to a doped aluminum nitride hardmask and a method of making a doped aluminum nitride hardmask. By adding a small amount of dopant, such as oxygen, when forming the aluminum nitride hardmask, the wet etch rate of the hardmask can be significantly reduced. Additionally, due to the presence of the dopant, the grain size of the hardmask is reduced compared to a non-doped aluminum nitride hardmask. The reduced grain size leads to smoother features in the hardmask which leads to more precise etching of the underlying layer when utilizing the hardmask.
    Type: Application
    Filed: April 22, 2013
    Publication date: November 7, 2013
    Inventors: Yong CAO, Kazuya DAITO, Rajkumar JAKKARAJU, Xianmin TANG
  • Patent number: 8541328
    Abstract: A ceramic material according to the present invention mainly contains magnesium, aluminum, oxygen, and nitrogen, the ceramic material has the crystal phase of a MgO—AlN solid solution in which aluminum nitride is dissolved in magnesium oxide, the crystal phase serving as a main phase. Preferably, XRD peaks corresponding to the (200) and (220) planes of the MgO—AlN solid solution measured with CuK? radiation appear at 2?=42.9 to 44.8° and 62.3 to 65.2°, respectively, the XRD peaks being located between peaks of cubic magnesium oxide and peaks of cubic aluminum nitride. More preferably, the XRD peak corresponding to the (111) plane appears at 2?=36.9 to 39°, the XRD peak being located between a peak of cubic magnesium oxide and a peak of cubic aluminum nitride.
    Type: Grant
    Filed: May 23, 2012
    Date of Patent: September 24, 2013
    Assignee: NGK Insulators, Ltd.
    Inventors: Morimichi Watanabe, Asumi Jindo, Yuji Katsuda, Yosuke Sato, Yoshinori Isoda
  • Publication number: 20130157445
    Abstract: There is provided a polycrystalline aluminum nitride base material having a linear expansion coefficient similar to GaN. The polycrystalline aluminum nitride base material as a substrate material for crystal growth of GaN-base semiconductors has a mean linear expansion coefficient of 4.9×10?6/K to 6.1×10?6/K between 20° C. and 600° C. and 5.5×10?6/K to 6.6×10?6/K between 20° C. and 1100° C.
    Type: Application
    Filed: August 3, 2011
    Publication date: June 20, 2013
    Inventors: Kimiya Miyashita, Michiyasu Komatsu, Katsuyuki Aoki, Kai Funaki
  • Publication number: 20130035224
    Abstract: Disclosed is a method for making an aluminum nitride substrate. At first, aluminum nitride is mixed with a carbonized material. The mixture is made into mixture powder in a granulation process. The mixture powder is sintered at an appropriate temperature so that the carbonized material reacts with oxygen to produce a gaseous carbon compound. The gaseous carbon compound is released, and hence an aluminum nitride substrate is made. Before the making of the aluminum nitride substrate is made, the aluminum nitride powder is mixed with the carbonized material. For the stable heat dispersion of the carbonized material, the heating is even during the sintering. The purity of the aluminum nitride substrate is high, the quality of the aluminum nitride substrate is good, and the size of the aluminum nitride substrate is large. Hence, the yield of the making of the aluminum nitride substrate is high.
    Type: Application
    Filed: September 20, 2011
    Publication date: February 7, 2013
    Applicant: Chung-Shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense
    Inventors: Yang-Kuao Kuo, Chia-Yi Hsiang, Bi-Jheng Chang, Fu-Hsing Huang
  • Patent number: 8367577
    Abstract: Flat, thin AlN membranes and methods of their manufacture are made available. An AlN thin film (2) contains between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms. Onto a base material (1), the AlN thin film (2) is formable utilizing a plasma generated by setting inside a vacuum chamber a sintered AlN ceramic containing between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms, and with the base material having been set within the vacuum chamber, irradiating the sintered AlN ceramic with a laser.
    Type: Grant
    Filed: February 18, 2009
    Date of Patent: February 5, 2013
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Issei Satoh, Naho Mizuhara, Keisuke Tanizaki, Michimasa Miyanaga, Takashi Sakurada, Yoshiyuki Yamamoto, Hideaki Nakahata
  • Patent number: 8357345
    Abstract: Disclosed is a method for removing oxygen from aluminum nitride by carbon. At first, an oven is provided. An aluminum nitride substrate is located in the oven. Nitrogen is introduced into the oven to form an atmosphere of nitrogen. The temperature is increased to the transformation point of the aluminum nitride substrate in the oven. Then, the heating is stopped and quenching is conducted in the oven. Carbon is introduced into the oven in the quenching. Thus, oxygen included in the aluminum nitride substrate reacts with the carbon to produce carbon monoxide or carbon dioxide. The carbon monoxide or carbon is released from the oven as well as the nitrogen. Thus, the aluminum nitride substrate is purified.
    Type: Grant
    Filed: September 20, 2011
    Date of Patent: January 22, 2013
    Assignee: Chung-Shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense
    Inventors: Yang-Kuao Kuo, Chia-Yi Hsiang, Ching-Hui ChiangLin, Te-Po Liu
  • Patent number: 8279576
    Abstract: A ceramic electrostatic chuck according to the present invention includes a dielectric layer with a support layer in contact with the back side of the dielectric layer, and an embedded electrostatic electrode. A wafer is placed on the dielectric layer and the dielectric layer is formed of sintered aluminum nitride containing Sm and has a volume resistivity in the range of 4×109 to 4×1010 ?cm at room temperature. The support layer is formed of sintered aluminum nitride containing Sm and Ce and has a volume resistivity of 1×1013 ?cm or more at room temperature.
    Type: Grant
    Filed: April 5, 2010
    Date of Patent: October 2, 2012
    Assignee: NGK Insulators, Ltd.
    Inventors: Keiichi Nakamura, Shunsuke Tanaka
  • Patent number: 8252410
    Abstract: Embodiments of the invention provide a method and apparatus for protecting a susceptor during a cleaning operation by loading a ceramic cover substrate containing either aluminum nitride or beryllium oxide onto the susceptor before introducing the cleaning agent into the chamber. In one embodiment, an aluminum nitride ceramic cover substrate is provided which includes an aluminum nitride ceramic wafer having a thermal conductivity of greater than 160 W/m-K, a circular-shaped geometry having a diameter within a range from about 11 inches to about 13 inches, a thickness within a range from about 0.030 inches to about 0.060 inches, and a flatness of about 0.010 inches or less. The thermal conductivity may be about 180 W/m-K, about 190 W/m-K, or greater. The thickness may be within a range from about 0.035 inches to about 0.050 inches, and the flatness may be about 0.008 inches, about 0.006 inches, or less.
    Type: Grant
    Filed: September 4, 2008
    Date of Patent: August 28, 2012
    Assignee: Applied Materials, Inc.
    Inventor: Muhammad M. Rasheed
  • Patent number: 8231985
    Abstract: The aluminum-nitride-based composite material according to the present invention is an aluminum-nitride-based composite material that is highly pure with the content ratios of transition metals, alkali metals, and boron, respectively as low as 1000 ppm or lower, has AlN and MgO constitutional phases, and additionally contains at least one selected from the group consisting of a rare earth metal oxide, a rare earth metal-aluminum complex oxide, an alkali earth metal-aluminum complex oxide, a rare earth metal oxyfluoride, calcium oxide, and calcium fluoride, wherein the heat conductivity is in the range of 40 to 150 W/mK, the thermal expansion coefficient is in the range of 7.3 to 8.4 ppm/° C., and the volume resistivity is 1×1014 ?·cm or higher.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: July 31, 2012
    Assignee: NGK Insulators, Ltd.
    Inventors: Yoshimasa Kobayashi, Akira Goto, Yuji Katsuda, Naohito Yamada
  • Patent number: 8226865
    Abstract: The aluminum-nitride-based composite material according to the present invention is an aluminum-nitride-based composite material that is highly pure with the content ratios of transition metals, alkali metals, and boron, respectively as low as 1000 ppm or lower, has AlN and MgO constitutional phases, and additionally contains at least one selected from the group consisting of a rare earth metal oxide, a rare earth metal-aluminum complex oxide, an alkali earth metal-aluminum complex oxide, a rare earth metal oxyfluoride, calcium oxide, and calcium fluoride, wherein the heat conductivity is in the range of 40 to 150 W/mK, the thermal expansion coefficient is in the range of 7.3 to 8.4 ppm/° C., and the volume resistivity is 1×1014 ?·cm or higher.
    Type: Grant
    Filed: October 19, 2009
    Date of Patent: July 24, 2012
    Assignee: NGK Insulators, Ltd.
    Inventors: Yoshimasa Kobayashi, Akira Goto, Yuji Katsuda, Naohito Yamada
  • Patent number: 8148283
    Abstract: A high-purity aluminum nitride sintered body is provided by efficiently removing oxides contained in a raw material powder in producing an aluminum nitride sintered body and preventing composite oxide produced by reaction of oxides contained in the raw material powder with a sintering aid from remaining in the aluminum nitride sintered body. The above sintered body is achieved by an aluminum nitride sintered body having a concentration of residual oxygen excluding attached oxygen of 350 ppm or less.
    Type: Grant
    Filed: February 4, 2008
    Date of Patent: April 3, 2012
    Assignee: Tokuyama Corporation
    Inventors: Yukihiro Kanechika, Masanobu Azuma
  • Patent number: 8039412
    Abstract: A composition including a polycrystalline metal nitride having a number of grains is provided. These grains have a columnar structure with one or more properties such as, an average grain size, a tilt angle, an impurity content, a porosity, a density, and an atomic fraction of the metal in the metal nitride.
    Type: Grant
    Filed: December 20, 2005
    Date of Patent: October 18, 2011
    Assignee: Momentive Performance Materials Inc.
    Inventors: Dong-Sil Park, Mark Philip D'Evelyn, Myles Standish Peterson, II, John Thomas Leman, Fred Sharifi
  • Patent number: 8022001
    Abstract: A method for producing an aluminum nitride sintered product according to the present invention includes the steps of (a) preparing a powder mixture that contains AlN, 2 to 10 parts by weight of Eu2O3 with respect to 100 parts by weight of AlN, Al2O3 such that a molar ratio of Al2O3 to Eu2O3 is 2 to 10, and TiO2 such that a molar ratio of TiO2 to Al2O3 is 0.05 to 1.2, but not Sm; (b) producing a compact from the powder mixture; and (c) firing the compact by subjecting the compact to hot-press firing in a vacuum or in an inert atmosphere.
    Type: Grant
    Filed: November 16, 2009
    Date of Patent: September 20, 2011
    Assignee: NGK Insulators, Ltd.
    Inventors: Naomi Teratani, Toru Hayase, Yuji Katsuda
  • Patent number: 7973481
    Abstract: An insulating material high both in thermal conductivity and light reflectance, and a submount high in heat radiatability for mounting an LED element thereon, capable of raising a light utilization factor and quickly radiating heat generated from the element. For example, used as a substrate material of a submount is a nitride sintered body having a reflectance of light in the wavelength region of from 350 nm to 800 nm of 50% or more and a reflectance of light with a wavelength of 700 nm of 60% or more, obtained by sintering a preform consisting of a composition containing 100 parts by mass of aluminum nitride powder and 0.5 to 10 parts by mass of a compound containing an alkaline earth metal such as 3CaO×Al2O3 in an inert atmosphere containing a specific quantity of carbon vapor, or by burning a coat of a nitride paste applied on a base substrate having a heat resistance at a predetermined temperature.
    Type: Grant
    Filed: April 26, 2010
    Date of Patent: July 5, 2011
    Assignee: Tokuyama Corporation
    Inventors: Yasuyuki Yamamoto, Yukihiro Kanechika, Masakatsu Maeda
  • Publication number: 20110120987
    Abstract: A substrate for a heating assembly comprising a mixture of a mica material with an electrically insulating material, the substrate having a thermal coefficient of expansion that is higher than pure mica. A method of manufacturing the substrate is also disclosed.
    Type: Application
    Filed: January 31, 2011
    Publication date: May 26, 2011
    Applicant: THERMOCERAMIX INC.
    Inventor: Richard C. ABBOTT
  • Publication number: 20110117344
    Abstract: A coated material for a cutting tool can realize long life-time under severe cutting processing conditions such as high-speed processing, high-feed-rate processing, higher hardness of a material to be cut, cutting of a difficult-to-cut material, etc. In a coated material in which a coating is coated on the surface of a substrate, at least one layer of the coating is a hard film having a cubic metallic compound which includes at least one metal element M selected from Al, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W, and at least one element selected from C, N and O. An X-ray intensity distribution of an ? axis in a pole figure for a (111) plane of the hard film has a maximum intensity in an ? angle range of 75 to 90°, and an X-ray intensity distribution of an ? axis in a pole figure for a (220) plane of the hard film has a maximum intensity in an ? angle range of 75 to 90°.
    Type: Application
    Filed: July 13, 2009
    Publication date: May 19, 2011
    Applicant: TUNGALOY CORPORATION
    Inventors: Lu Chen, Mamoru Kohata
  • Patent number: 7936128
    Abstract: A high intensity discharge lamp includes an arc tube with a chemical fill, capillaries extended from the arc tube, electrodes fed through the capillaries into the arc tube, and a frit seal that seals the capillaries, where the frit seal includes silica (SiO2) in a range of more than 0 wt % to less than 5 wt %, alumina (Al2O3), and one of dysprosia (Dy2O3) and yttrium oxide (Y2O3). This frit seal material can withstand a higher operating temperature so that the length of the capillaries can be reduced compared to those sealed with conventional frit seal material.
    Type: Grant
    Filed: July 28, 2008
    Date of Patent: May 3, 2011
    Assignee: OSRAM SYLVANIA Inc.
    Inventors: Arlene Hecker, Jeffrey Holt, Dana Caldwell
  • Publication number: 20110076453
    Abstract: Affords an AlxGa1-xN single crystal suitable as an electromagnetic wave transmission body, and an electromagnetic wave transmission body that includes the AlxGa1-xN single crystals. The AlxGa1-xN (0<x?1) single crystal (2) has a dielectric loss tangent of 5×10?3 or lower with a radio frequency signal of at least either 1 MHz or 1 GHz having been applied to the crystal at an atmospheric temperature of 25° C. An electromagnetic wave transmission body (4) includes the AlxGa1-xN single crystal, which has a major surface (2m), wherein the AlxGa1-xN single crystal (2) has a dielectric loss tangent of 5×10?3 or lower with an RF signal of at least either 1 MHz or 1 GHz having been applied thereto at an atmospheric temperature of 25° C.
    Type: Application
    Filed: May 25, 2009
    Publication date: March 31, 2011
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Satoshi Arakawa, Takashi Sakurada, Michimasa Miyanaga, Keisuke Tanizaki, Naho Mizuhara, Issei Satoh, Hideaki Nakahata
  • Patent number: 7867466
    Abstract: Means for a thermally conductive and electrically insulating material 1 containing an AlN crystal 150 mainly comprising AlN, and a production method thereof. In production, a molten aluminum layer is formed on an AlN substrate 11 with at least its surface comprising AlN in an atmosphere of a non-oxidizing gas, and the molten aluminum layer is then heated in an atmosphere of N2 gas to form an AlN crystal 150 which mainly comprises an AlN layer 125. The means are also a thermally conductive and electrically insulating material having an AlN crystal and an Al gradient layer, and a production method thereof. In production, a heating step of forming a molten aluminum layer 15 on the AlN layer 125 and heating it in an atmosphere of N2 gas is repeated at least twice or more. At this time, the amount of the N2 gas dissolved in the molten aluminum layer is decreased as the heating step is repeated.
    Type: Grant
    Filed: October 29, 2007
    Date of Patent: January 11, 2011
    Assignee: Denso Corporation
    Inventors: Yukihisa Takeuchi, Yasumasa Hagiwara, Yuuichi Aoki, Eiichi Torigoe
  • Patent number: 7833922
    Abstract: Methods of forming aluminum oxynitride (AlON) materials include sintering green bodies comprising aluminum orthophosphate or another sacrificial material therein. Such green bodies may comprise aluminum, oxygen, and nitrogen in addition to the aluminum orthophosphate. For example, the green bodies may include a mixture of aluminum oxide, aluminum nitride, and aluminum orthophosphate or another sacrificial material. Additional methods of forming aluminum oxynitride (AlON) materials include sintering a green body including a sacrificial material therein, using the sacrificial material to form pores in the green body during sintering, and infiltrating the pores formed in the green body with a liquid infiltrant during sintering. Bodies are formed using such methods.
    Type: Grant
    Filed: January 8, 2009
    Date of Patent: November 16, 2010
    Assignee: Battelle Energy Alliance, LLC
    Inventors: Michael P. Bakas, Thomas M. Lillo, Henry S. Chu
  • Patent number: 7803732
    Abstract: The present invention contemplates the addition of zirconium compounds to well known ceramic ballistic materials to increase resistance to penetration by projectiles. In the preferred embodiments of the present invention, the zirconium compound that is employed consists of ZrO2 and is provided in the range of about 0.1% to about 11%, by weight, of starting material before densification. Preferred ranges of proportion of ZrO2 in the finished ceramic material are in the ranges of about 0.30% to about 0.75%, by weight, or about 8-9%, by weight. The ballistic material using the combination of SiC with low volume of sintering aid and ZrO2 raises the theoretical density of the ceramic material to between 3.225 and 3.40 g/cc, which is slightly higher than the typical 3.22 g/cc theoretical density for hot pressed fully dense SiC.
    Type: Grant
    Filed: May 9, 2006
    Date of Patent: September 28, 2010
    Inventors: Daniel Ashkin, Richard Palicka
  • Patent number: 7803733
    Abstract: The aluminum nitride sintered body includes at least europium, aluminum, and oxygen. It was found that a grain boundary phase having a peak having a X-ray diffraction profile substantially the same as that of an Sr3Al2O6 phase could be three-dimensionally continued in the aluminum nitride sintered body to realize a lower resistance without damaging various properties unique to aluminum nitride.
    Type: Grant
    Filed: March 25, 2008
    Date of Patent: September 28, 2010
    Assignee: NGK Insulators, Ltd.
    Inventors: Naomi Teratani, Yuji Katsuda
  • Patent number: 7741237
    Abstract: There is described a sealing composition for sealing aluminum nitride and aluminum oxynitride ceramics comprising: a mixture of SiO2, at least one other metal oxide, and a silicon additive comprising at least one of silicon metal or a silicide. The silicon additive acts to suppress the formation of nitrogen bubbles during the sealing of articles comprised of aluminum nitride or aluminum oxynitride ceramics, e.g., as in the case of a ceramic discharge vessel for a high intensity discharge lamp.
    Type: Grant
    Filed: January 20, 2010
    Date of Patent: June 22, 2010
    Assignee: Osram Sylvania Inc.
    Inventors: Yi Zheng, Richard C. Marlor, George C. Wei
  • Patent number: 7737065
    Abstract: The present invention relates to a process of producing an aluminum nitride sintered body which satisfies both high thermal conductivity and reduction in the shrinkage factor at the time of sintering. The aluminum nitride sintered body is a sintered body of a powder mixture containing an aluminum nitride powder and a sintering aid, characterized by having a thermal conductivity of at least 190 W/m·K and a shrinkage factor represented by the percentage of {(dimensions of the molded body before sintering)?(dimensions of the sintered body after sintering)}/(dimensions of the molded body before sintering) of at most 15%.
    Type: Grant
    Filed: August 10, 2009
    Date of Patent: June 15, 2010
    Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
    Inventors: Takeshi Gotoh, Hiroshi Murata, Kohki Ichikawa
  • Publication number: 20100093514
    Abstract: A high-purity aluminum nitride sintered body is provided by efficiently removing oxides contained in a raw material powder in producing an aluminum nitride sintered body and preventing composite oxide produced by reaction of oxides contained in the raw material powder with a sintering aid from remaining in the aluminum nitride sintered body. The above sintered body is achieved by an aluminum nitride sintered body having a concentration of residual oxygen excluding attached oxygen of 350 ppm or less.
    Type: Application
    Filed: February 4, 2008
    Publication date: April 15, 2010
    Applicant: TOKUYAMA CORPORATION
    Inventors: Yukihiro Kanechika, Masanobu Azuma
  • Patent number: 7662736
    Abstract: The high thermal conductive aluminum nitride sintered body according to the present invention has: a thermal conductivity of 220 W/m·K or more; and a three point bending strength of 250 MPa or more; wherein a ratio (IAl2Y4O9/IAlN) of X-ray diffraction intensity (IAl2Y4O9) of Al2Y4O9 (201 plane) with respect to X-ray diffraction intensity (IAlN) of aluminum nitride (101 plane) is 0.002 to 0.03. According to the foregoing structure, there can be provided an aluminum nitride sintered body having a high thermal conductivity and excellent heat radiating property.
    Type: Grant
    Filed: November 17, 2008
    Date of Patent: February 16, 2010
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
    Inventors: Michiyasu Komatsu, Kimiya Miyashita
  • Publication number: 20100029463
    Abstract: Preparation for producing refractory materials, characterized in that it comprises one or more particulate, refractory components and one or more binders, where—the particulate, refractory component has a mean particle diameter of >0.3 m and—the binder is selected from among—from 0.05 to 50% by weight of a very finely particulate binder having a mean particle diameter of from 10 nm to 0.3 m selected from the group consisting of aluminium oxide, titanium dioxide, zirconium dioxide and/or mixed oxides of the abovementioned oxides, —from 0 to 20% by weight of an inorganic binder, from 0 to 20% by weight of a hydraulically setting binder, —from 0 to 15% by weight of an organic, silicon-free binder—and the preparation additionally contains from 0 to 35% by weight of water, where—the proportion of the particulate, refractory component is equal to 100 and the percentages of the further materials in the preparation are based on the particulate component.
    Type: Application
    Filed: September 19, 2007
    Publication date: February 4, 2010
    Applicant: Evonik Degussa GmbH
    Inventors: Tadeusz Von Rymon Lipinski, Christoph Tontrup, Wolfgang Lortz, Christoph Batz-Sohn
  • Patent number: 7629282
    Abstract: A conductive channel formed of an (Sm, Ce)Al11O18 is interconnected in grain boundaries of aluminum nitride (AlN) particles, thereby reducing the temperature dependency of the volume resistivity of an AlN sintered body formed therefrom. At the same time, a solid solution of the AlN particles is formed with at least one of C and Mg, to prevent the conductive channel from moving into the AlN particles, thereby maintaining a high volume resistivity within the AlN particles even at a high temperature.
    Type: Grant
    Filed: March 14, 2007
    Date of Patent: December 8, 2009
    Assignee: NGK Insulators, Ltd.
    Inventors: Jun Yoshikawa, Yoshimasa Kobayashi, Naohito Yamada
  • Patent number: 7605102
    Abstract: An aluminum nitride ceramic including aluminum nitride grains and grain boundary phases comprises a grain boundary phase-rich layer including more amount of the grain boundary phases in a surface layer of the aluminum nitride ceramic than in an inside of the aluminum nitride ceramic. The grain boundary phases in the grain boundary phase-rich layer include at least one of rare earth element and alkali earth element.
    Type: Grant
    Filed: February 21, 2007
    Date of Patent: October 20, 2009
    Assignee: NGK Insulators, Ltd.
    Inventors: Yoshimasa Kobayashi, Naohito Yamada, Toru Hayase
  • Patent number: 7592280
    Abstract: An aluminum nitride sintered body is provided, wherein an average crystal grain diameter is 2.0 ?m or less, a crystalline phase detected by an X-ray diffractometer is an AlN phase only or an AlN phase and an AlON phase only, and SiO2 or MgO is present in an amount of more than 0.05 wt % to less than 1 wt %.
    Type: Grant
    Filed: March 14, 2007
    Date of Patent: September 22, 2009
    Assignee: NGK Insulators, Ltd.
    Inventors: Yoshimasa Kobayashi, Naohito Yamada
  • Patent number: 7553787
    Abstract: An aluminum nitride-based ceramic sintered body is provided, which is manufactured by sintering an aluminum nitride powder comprising aluminum nitride as a main component, carbon in an amount of 0.1 wt % or more to 1.0 wt % or less, and containing oxygen in an amount that is not greater than 0.7 wt %, wherein carbon and oxygen are dissolved in grains of the aluminum nitride powder. The a-axis length of the lattice constant of the aluminum nitride is in a range of 3.1120 ? or more to 3.1200 ? or less, and the a c-axis length of the lattice constant is in a range of 4.9810 ? or more to 4.9900 ? or less. The volume resistivity of the aluminum nitride-based ceramic sintered body at 500° C. is 109 ?·cm or more.
    Type: Grant
    Filed: December 18, 2006
    Date of Patent: June 30, 2009
    Assignee: NGK Insulators, Ltd.
    Inventors: Jun Yoshikawa, Yoshimasa Kobayashi, Naomi Teratani
  • Patent number: 7553469
    Abstract: To provide an aluminum nitride powder and an aluminum nitride sintered body which satisfy both high thermal conductivity of an aluminum nitride sintered body and reduction in the shrinkage factor at the time of sintering. An aluminum nitride powder characterized in that it has local maximum values in size in regions of from 3 to 15 ?m, from 0.5 to 1.5 ?m and 0.3 ?m or less, the proportions of particles in the respective regions are from 40 to 70%, from 25 to 40% and from 0.5 to 20% on the volume basis, and it has an oxygen amount of from 0.5 to 1.5 mass %. An aluminum nitride sintered body which is a sintered body of a powder mixture containing the above aluminum nitride powder and a sintering aid, characterized by having a thermal conductivity of at least 190 W/m·K and a shrinkage factor represented by the percentage of {(dimensions of the molded body before sintering)?(dimensions of the sintered body after sintering)}/(dimensions of the molded body before sintering) of at most 15%.
    Type: Grant
    Filed: March 29, 2005
    Date of Patent: June 30, 2009
    Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
    Inventors: Takeshi Gotoh, Hiroshi Murata, Kohki Ichikawa
  • Publication number: 20090143215
    Abstract: There is disclosed a pre-sintering process for reducing non-uniformities in the density of a sintered material comprising (a) providing a mixture of (i) a first sinterable material containing a contaminant the presence of which during sintering of the first sinterable material results in a higher vapor pressure than would occur during sintering of pure first sinterable material and (ii) a second material having a higher affinity for the contaminant than does the first sinterable material; and (b) heating the mixture at a temperature and for a time sufficient to allow the second material to at least partly mitigate the propensity of the contaminant to raise the vapor pressure during the sintering of the first sinterable material. Other embodiments are also disclosed.
    Type: Application
    Filed: July 28, 2006
    Publication date: June 4, 2009
    Applicant: General Electric Company
    Inventors: Sean M. Sweeney, Timothy Yosenick
  • Patent number: 7479467
    Abstract: The high thermal conductive aluminum nitride sintered body according to the present invention has: a thermal conductivity of 220 W/m·K or more; and a three point bending strength of 250 MPa or more; wherein a ratio (IAl2Y4O9/IAlN) of X-ray diffraction intensity (IAl2Y4O9) of Al2Y4O9 (201 plane) with respect to X-ray diffraction intensity (IAlN) of aluminum nitride (101 plane) is 0.002 to 0.03. According to the foregoing structure, there can be provided an aluminum nitride sintered body having a high thermal conductivity and excellent heat radiating property.
    Type: Grant
    Filed: November 18, 2004
    Date of Patent: January 20, 2009
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
    Inventors: Michiyasu Komatsu, Kimiya Miyashita
  • Patent number: 7473661
    Abstract: Disclosed is a method for preparing a high dense aluminum nitride (AlN) sintered body. The method includes the steps of preparing powders for the AlN sintered body comprising Y2O3 of 0.1 to 15 wt %, TiO2 of 0.01 to 5 wt % and MgO of 0.1 to 10 wt %, and obtaining the AlN sintered body with a volume resistivity of 1×1015 ?cm or more at a normal temperature and a relative density of 99% or more. The sintered body is obtained by sintering the powders and then cooling the sintered powders or sintering the powders and then cooling the sintered powders with annealing the sintered powders during the cooling.
    Type: Grant
    Filed: January 18, 2008
    Date of Patent: January 6, 2009
    Assignee: Komico Ltd.
    Inventors: Min-Woo Lee, Hyung Suk Ahn, Sung-Min Lee
  • Patent number: 7459408
    Abstract: The invention provides Al2O3 dispersion-strengthened Ti2AlN composites, wherein Ti2AlN matrix and Al2O3 strengthening phase both are reactively formed in situ. The volume fraction of Al2O3 is 5% to 50%; the particle size of Al2O3 ranges from 500 nm to 2 ?m, with the mean size of Al2O3 particles about 0.8 ?m to 1.2 ?m; the shape of Ti2AlN grain is plate-like about 80 nm to 120 nm thick and 0.5 ?m to 2 ?m long. The composites exhibit excellent deformability at high temperature under compression and flexure stresses, and possess excellent oxidation resistance at 1100° C. to 1350° C. for long time (100 h). The composites show typical metallic conductor behavior and the electrical resistivity at room temperature is 0.3 to 0.8 ??·m. The invention also provides a method for preparing the same: First, nanoparticles in Ti—Al binary system were prepared in continuous way by hydrogen plasma-metal reaction (HPMR) using Ti—Al alloy rods with Al content 20% to 60% by atom, or pure Al rods and pure Ti rods.
    Type: Grant
    Filed: July 15, 2005
    Date of Patent: December 2, 2008
    Assignee: Institute of Metal Research, Chinese Academy of Sciences
    Inventors: Juying Li, Yuyou Cui, Rui Yang
  • Publication number: 20080200326
    Abstract: The present invention relates to an aluminum nitride sintered body which satisfies both high thermal conductivity and reduction in the shrinkage factor at the time of sintering. The aluminum nitride sintered body is a sintered body of a powder mixture containing an aluminum nitride powder and a sintering aid, characterized by having a thermal conductivity of at least 190 W/m·K and a shrinkage factor represented by the percentage of {(dimensions of the molded body before sintering)-(dimensions of the sintered body after sintering)}/(dimensions of the molded body before sintering) of at most 15%.
    Type: Application
    Filed: April 18, 2008
    Publication date: August 21, 2008
    Applicant: Denki Kagaku Kogyo Kabushiki Kaisha
    Inventors: Takeshi Gotoh, Hiroshi Murata, Kohki Ichikawa
  • Patent number: 7407903
    Abstract: The present invention relates to a material for use at temperatures exceeding 1200° C. and in oxidizing atmospheres consisting generally of an alloy between a metal, aluminium (Al) and carbon (C) or nitrogen (N). The invention is characterized in that the alloy has a composition MZAlYXW where M essentially consists of titanium (Ti), chromium (Cr) and/or niobium (Nb) and where X is carbon (C) or where X is nitrogen (N) and/or carbon (C) when M is titanium (Ti); and in that z lies in the range of 1.8 to 2.2, y lies in the range of 0.8-1.2 and w lies in the range 0.8-1.2, and wherein a protective oxide layer of Al2O3 is formed after heating to the mentioned temperature.
    Type: Grant
    Filed: January 27, 2004
    Date of Patent: August 5, 2008
    Assignee: Sandvik Intellectual Property AB
    Inventors: Mats Sundberg, Kjell Lindgren, Tamer El-Raghy, Gustav Malmqvist
  • Publication number: 20080146432
    Abstract: A method for improving surface thermal shock resistance of a member made of ceramics to which thermal shock resistance is required comprising, forming homogeneously distributed linear dislocation structure on the surface of the member made of ceramics to which thermal shock resistance is required by blasting abrasives composed of fine particles whose average particle size is from 5 ?m to 200 ?m and whose surface shape is convex, wherein Vickers hardness (HV) of said fine particles is 800 or more and equal to or less than the hardness of the member made of ceramics to which thermal shock resistance is required.
    Type: Application
    Filed: April 6, 2005
    Publication date: June 19, 2008
    Inventors: Saka Hiroyasu, Moon Won-Jin, Uchimura Shouji, Ito Toshiro
  • Patent number: 7341969
    Abstract: The object of the present invention is to provide a susceptor with superior thermal uniformity by minimizing pores in an aluminum nitride sintered body. In an aluminum nitride sintered body according to the present invention, the tin content and sulfur content are controlled so that they are no more than a fixed amount. More specifically, in an aluminum nitride sintered body having as its main component aluminum nitride, the tin content in the aluminum nitride sintered body is no more than 50 ppm and the sulfur content is no more than 100 ppm. It would be preferable for a resistance heating body to be formed in the aluminum nitride sintered body and it would be preferable for the aluminum nitride sintered body to be used as a semiconductor heating unit.
    Type: Grant
    Filed: September 23, 2005
    Date of Patent: March 11, 2008
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Masuhiro Natsuhara, Hirohiko Nakata
  • Patent number: 7319080
    Abstract: An aluminum nitride sintered body comprising crystal grains of an average grain size (D50) of 0.1 to 2.5 ?m, and having a pore area ratio of not larger than 1×10?7, a pore density of not larger than 0.05 pores/mm2 of pores having diameters of not smaller than 1 ?m, and a Vickers' hardness in a range of 14 to 17 GPa. The aluminum nitride sintered body has a very small pore density despite of its relatively small crystal grain size, features excellent strength and mirror machinability, and is particularly useful as a material for circuit substrates on which fine wiring patterns are formed.
    Type: Grant
    Filed: September 17, 2003
    Date of Patent: January 15, 2008
    Assignee: Tokuyama Corporation
    Inventors: Yukihiro Kanechika, Toshikatsu Miki, Ayako Kai
  • Patent number: 7309672
    Abstract: This disclosure describes sintered bodies comprising about 90 wt % to about 99 wt % of boron carbide, having a B:C atomic ratio ranging from 3.8 to 4.5:1; 0 to 1 wt % free carbon; 0 to 1 wt % BN or AlN, remainder an oxide binder phase; said sintered body having a uniform microstructure composed of substantially equiaxed grains of said boron carbide; the oxide binder phase comprising at least a rare earth aluminate and optionally Al2O3 or other ternary or binary phases of rare earth oxide-alumina systems; the binder phase being present in form of pockets at the multiple grain junctions and the density of no more than 2.6 g/cm3. Also described is a manufacturing process for the above described substantially pore-free, sintered boron carbide materials with high strength and fracture toughness, which can be used for production of large-area parts. This is achieved by liquid phase low temperature-low pressure hot pressing of boron carbide in an argon atmosphere.
    Type: Grant
    Filed: July 5, 2005
    Date of Patent: December 18, 2007
    Assignee: Ceradyne, Inc.
    Inventors: Biljana Mikijelj, Georg Victor, Karl A. Schwetz
  • Patent number: 7288496
    Abstract: An aluminum nitride sintered body is provided, including a polycrystalline structure in which grain boundary fracture toughness KICgb is 1.6 MPa·m1/2 or more. The grain boundary fracture toughness KICgb is determined by the equation KICgb=KIC·cos2(?·PIF/200), wherein KIC is fracture toughness (MPa·m1/2), and PIF is a percentage of the intergranular fracture (%).
    Type: Grant
    Filed: June 18, 2004
    Date of Patent: October 30, 2007
    Assignee: NGK Insulators, Ltd.
    Inventors: Yoshimasa Kobayashi, Toru Hayase, Naohito Yamada