Abstract: Provided is a food cooking surface for a cookware item or an electrical household cooking appliance, consisting of a deposit of nitride of metal elements on a substrate, the metal elements of the deposit comprising one or more X transition metal(s) and aluminium. The production of the deposit comprises a nitridation step in arder to obtain a coating of type (X,Al)N. According to the invention, the (X,Al)N-type coating is a coating of nitride(s) of the one or more X transition metal(s), enriched with aluminium, in which niobium and/or zirconium is/are make up the most part of the X transition metal(s), the atomic ratio of aluminium in the metal elements of the deposit being at least equal to 20%. Also provided are cookware items and electrical household appliances intended for the cooking of food, comprising the above-mentioned type of cooking surface.

Abstract: Composite bodies made by a silicon metal infiltration process that feature a silicon intermetallic, e.g., a metal silicide. Not only does this give the composite material engineer greater flexibility in designing or tailoring the physical properties of the resulting composite material, but the infiltrant also can be engineered compositionally to have much diminished amounts of expansion upon solidification, thereby enhancing net-shape-making capabilities. These and other consequences of engineering the metal component of composite bodies made by silicon infiltration permit the fabrication of large structures of complex shape.

Abstract: There is provided a polycrystalline aluminum nitride base material having a linear expansion coefficient similar to GaN. The polycrystalline aluminum nitride base material as a substrate material for crystal growth of GaN-base semiconductors has a mean linear expansion coefficient of 4.9×10?6/K to 6.1×10?6/K between 20° C. and 600° C. and 5.5×10?6/K to 6.6×10?6/K between 20° C. and 1100° C.

Abstract: Composite materials composed of cubic boron nitride (cBN) and a matrix component of various ceramic oxides, nitrides, and solid solutions of matrix materials as well as whisker reinforcements. Methods of manufacture and their use in high performance machining of ferrous metals are also claimed and disclosed.

Abstract: Composite bodies made by a silicon metal infiltration process that feature a silicon intermetallic, e.g., a metal silicide. Not only does this give the composite material engineer greater flexibility in designing or tailoring the physical properties of the resulting composite material, but the infiltrant also can be engineered compositionally to have much diminished amounts of expansion upon solidification, thereby enhancing net-shape-making capabilities. These and other consequences of engineering the metal component of composite bodies made by silicon infiltration permit the fabrication of large structures of complex shape.

Abstract: The invention generally relates to a sintered CBN composite compact having a non-CBN portion. The compact includes about 86 to about 90% CBN and the non CBN portion contains borides and nitrides of Al. The compact is for use as a cutting tool insert in continuous machining of gray cast iron. The sintered compact has a thermal conductivity of 1.25-4 W/cm/° K. in the temperature range of about 200° C. to about 600° C. and sonic velocity of at least about 14.5 Km/sec at room temperature.

Abstract: The composite sintered body of the invention is a composite sintered body, containing 20 volume % or more and 80 volume % or less of cubic boron nitride particles, and a binder; wherein the binder contains at least one selected from the group consisting of nitrides, carbides, borides, and oxides of elements in the group 4a, elements in the group 5a, and elements in the group 6a in the periodic table, and solid solutions thereof, at least one selected from the group consisting of simple substances of Zr, Si, Hf, Ge, W and Co, compounds thereof, and solid solutions thereof, and a compound of Al; and when the composite sintered body contains therein W and/or Co, the total weight of the W and/or Co is less than 2.0 weight % and further the composite sintered body contains therein one or more of the Zr, Si, Hf and Ge (hereinafter referred to as “X”), and when the composite sintered body contains the X, the amount of each of the X is 0.005 weight % or more and less than 2.0 weight %, X/(X+W+Co) is 0.

Abstract: A method for producing an aluminum nitride sintered product according to the present invention includes the steps of (a) preparing a powder mixture that contains AlN, 2 to 10 parts by weight of Eu2O3 with respect to 100 parts by weight of AlN, Al2O3 such that a molar ratio of Al2O3 to Eu2O3 is 2 to 10, and TiO2 such that a molar ratio of TiO2 to Al2O3 is 0.05 to 1.2, but not Sm; (b) producing a compact from the powder mixture; and (c) firing the compact by subjecting the compact to hot-press firing in a vacuum or in an inert atmosphere.

Abstract: The outer-peripheral coating material of the present invention contains a filler containing a laser-coloring powder containing at least one member selected from the group consisting of a metal and a metal compound each developing a color which differs from the original color when irradiated with a laser beam, and a ceramic powder composed of a ceramic other than the material which constitutes the laser-coloring powder, and a dispersing medium, wherein the filler contains the laser-coloring powder in an amount of 20 to 400 parts by mass relative to 100 parts by mass of the ceramic powder.

Abstract: A sintered cermet and a cutting tool are provided which have high toughness and high anti-chipping. The sintered cermet comprises a hard phase composed of one or more kinds selected from carbides, nitrides, and carbonitrides of one or more metals selected from metals belonging to Groups 4, 5, and 6 of the periodic table, each of which is composed mainly of Ti; and a binder phase composed mainly of Ni and Co. When the crystal lattice constant of the binder phase is measured by Pawley method, two kinds of binder phases having two kinds of crystal lattice constants 31 and 32 exist in the interior of the sintered cermet.

Abstract: There is provided a hard film excellent in wear resistance. The hard film in accordance with the present invention includes (TiaCrbAlcLd) (BxCyNz) in terms of composition, in which the L is at least one of Si and Y, and the a, b, c, d, x, y, and z each denote the atomic ratio, and satisfy: 0.1?a<0.3; 0.3<b<0.6; 0.2?c<0.35; 0.01?d<0.1; a+b+c+d=1; x?0.1; y?0.1; 0.8?z?1; and x+y+z=1.

Abstract: The present invention contemplates the addition of zirconium compounds to well known ceramic ballistic materials to increase resistance to penetration by projectiles. In the preferred embodiments of the present invention, the zirconium compound that is employed consists of ZrO2 and is provided in the range of about 0.1% to about 11%, by weight, of starting material before densification. Preferred ranges of proportion of ZrO2 in the finished ceramic material are in the ranges of about 0.30% to about 0.75%, by weight, or about 8-9%, by weight. The ballistic material using the combination of SiC with low volume of sintering aid and ZrO2 raises the theoretical density of the ceramic material to between 3.225 and 3.40 g/cc, which is slightly higher than the typical 3.22 g/cc theoretical density for hot pressed fully dense SiC.

Abstract: A method for producing an aluminum nitride sintered product according to the present invention includes the steps of (a) preparing a powder mixture that contains AlN, 2 to 10 parts by weight of Eu2O3 with respect to 100 parts by weight of AlN, Al2O3 such that a molar ratio of Al2O3 to Eu2O3 is 2 to 10, and TiO2 such that a molar ratio of TiO2 to Al2O3 is 0.05 to 1.2, but not Sm; (b) producing a compact from the powder mixture; and (c) firing the compact by subjecting the compact to hot-press firing in a vacuum or in an inert atmosphere.

Abstract: An aluminum nitride sinter includes aluminum nitride crystal grains and a grain boundary phase derived from a sintering aid. In any cross section in a surface region extending up to 100 ?m from the surface of the sinter, the proportion of the area of a grain boundary phase having a circumscribed circle diameter of 1 ?m or less to the total area of the grain boundary phase is at least 50%, and the average grain diameter of the aluminum nitride crystal grains is in the range of 3.0 to 7.0 ?m. This aluminum nitride sinter can be produced from an aluminum nitride slurry having a specific grain size distribution, an aluminum nitride green object having a specific submerged density, or an aluminum nitride degreased object having a specific pore diameter.

Abstract: The invention provides Al2O3 dispersion-strengthened Ti2AlN composites, wherein Ti2AlN matrix and Al2O3 strengthening phase both are reactively formed in situ. The volume fraction of Al2O3 is 5% to 50%; the particle size of Al2O3 ranges from 500 nm to 2 ?m, with the mean size of Al2O3 particles about 0.8 ?m to 1.2 ?m; the shape of Ti2AlN grain is plate-like about 80 nm to 120 nm thick and 0.5 ?m to 2 ?m long. The composites exhibit excellent deformability at high temperature under compression and flexure stresses, and possess excellent oxidation resistance at 1100° C. to 1350° C. for long time (100 h). The composites show typical metallic conductor behavior and the electrical resistivity at room temperature is 0.3 to 0.8 ??·m. The invention also provides a method for preparing the same: First, nanoparticles in Ti—Al binary system were prepared in continuous way by hydrogen plasma-metal reaction (HPMR) using Ti—Al alloy rods with Al content 20% to 60% by atom, or pure Al rods and pure Ti rods.

Abstract: The aluminum nitride sintered body includes at least europium (Eu), aluminum (Al), and oxygen (O). It was found that a grain boundary phase having a peak having a X-ray diffraction profile substantially the same as that of an Sr3Al2O6 phase could be three-dimensionally continued in the aluminum nitride sintered body to realize a lower resistance without damaging various properties unique to aluminum nitride.

Abstract: The present invention provide a high dense aluminum nitride sintered body, a preparing method thereof, and a member for manufacturing semiconductor using the sintered body which has excellent leakage current characteristic, enough adsorbing property, good detachment property and excellent thermal conductivity and so can be applied to even a member for manufacturing semiconductor requiring high volume resistivity like the coulomb type electrostatic chucks as well as the Johnsen-Rahbek type electrostatic chucks.

Abstract: In an aluminum nitride single crystal, Si and C are dissolved, and a lattice constant of an a-axis is within a range of 3.0935 [?] or more to 3.1110 [?] or less. In such a way, a lattice constant of the aluminum nitride single crystal is controlled in response to lattice constants of functional layers to be formed, thus making it possible to form, with good crystallinity, the functional layers having a variety of compositions.

Abstract: A substrate holding structure having excellent corrosion resistance and airtightness, excellent dimensional accuracy and sufficient durability when mechanical or thermal stress is applied thereto is obtained. A holder (1) serving as the substrate holding structure includes a ceramic base (2) for holding a substrate, a protective cylinder (7) joined to the ceramic base (2) and a joining layer (8) positioned therebetween for joining the ceramic base (2) and the protective cylinder (7) to each other. The joining layer (8) contains at least 2 mass % and not more than 70 mass % of a rare earth oxide, at least 10 mass % and not more than 78 mass % of aluminum oxide, and at least 2 mass % and not more than 50 mass % of aluminum nitride. The rare earth oxide or the aluminum oxide has the largest proportional content among the aforementioned three types of components in the joining layer (8).

Abstract: An aluminum nitride ceramic having a low volume resistivity at room temperature and a relatively low samarium content is provided. The aluminum nitride ceramic contains aluminum nitride as a main component and samarium in a converted content, calculated as samarium oxide, of 0.060 mole percent or lower. The aluminum nitride ceramic includes aluminum nitride particles and a samarium-aluminum composite oxide phase having a length of at least 7 ?m.

Abstract: A novel aluminum nitride material having a low room temperature volume resistivity is provided. The aluminum nitride material has an aluminum nitride main component and includes at least 0.03 mol % of europium oxide. The aluminum nitride material has an aluminum nitride phase and an europium-aluminum composite oxide phase. An aluminum nitride material also provided having an aluminum nitride main component, wherein a total content of europium oxide and samarium oxide is at least 0.09 mol %. The aluminum nitride material has an aluminum nitride phase and a composite oxide phase containing at least europium and aluminum.

Abstract: A refractory article for use in casting operations wherein said article is subject to prolonged contact with molten metal of at least 1500° C. for at least three hours, said article comprises a ceramic composite consisting essentially of about 10 to about 40 wt. % mullite; about 35 to about 5 wt. % aluminium nitride; and at least about 20 wt. % boron nitride, for forming a reactive coating layer covering at least 80% of exposed surfaces and providing corrosion/erosion protection for said article against molten metal.

Abstract: An aluminum nitride ceramic is provided, including 0.5 to 10 weight percent of boron atoms and 0.1 to 2.5 weight percent of carbon atoms. The ceramic has a room temperature volume resistivity not lower than 1×1014?·cm, and a volume resistivity at 500° C. of not lower than 1×108?·cm. An a-axis lattice constant of the aluminum nitride in the ceramic is not shorter than 3.112 angstrom and a c-axis lattice constant of the aluminum nitride is not shorter than 4.980 angstrom.

Abstract: An aluminum nitride material having a high thermal conductivity and reduced room temperature volume resistivity is provided. The aluminum nitride material has an interconnected intergranular phase that functions as an electrically conductive phase. The content of the conductive phase is not higher than 20 percent, calculated according to the following formula based on an X-ray diffraction profile: Content of the conductive phase (%)=(Integrated strength of the strongest peak of the conductive phase/Integrated strength of the strongest peak of aluminum nitride phase)×100. The aluminum nitride material has an electric current response index in a range of 0.9 to 1.1, defined according to the following formula: Electric current response index=(Electric current Aat 5 seconds after a voltage is applied/Electric current at 60 seconds after a voltage is applied).

Abstract: An objective of the present invention is to provide an aluminum nitride sintered body making it possible to keep a volume resistivity of 108 ?•cm or more, and guarantee covering-up capability, a large radiant heat amount and measurement accuracy with a thermoviewer. A carbon-containing aluminum nitride sintered body of the present invention of the present invention comprising: carbon whose peak cannot be detected on its X-ray diffraction chart or whose peak is below its detection limit thereon: in a matrix made of aluminum nitride.

Abstract: An aluminum nitride ceramic is provided, containing boron atoms in an amount of not lower than 1.0 weight percent and carbon atoms in an amount of not lower than 0.3 weight percent and having a volume resistivity at room temperature of not higher than 1×1012 ?·cm. The aluminum ceramic comprises aluminum nitride and an intergranular phase mainly consisting of boron nitride constituting a conductive path. Such a ceramic may be obtained by holding a mixture containing at least aluminum nitride and boron carbide at a holding temperature in a range of 1400° C. to 1800° C. and then sintering the mixture at a maximum temperature that is higher than the holding temperature.

Abstract: A method of producing a ceramic matrix composite is provided, which production method reduces metal residual percentage within matrix with little energy consumption, without requiring special external heating means and special equipment while it is industrially simple and at a low price. It is a method of producing a ceramic matrix composite having the steps of filling mixed powder obtained by mixing metal powder and boron nitride powder into a predetermined container to form a green compact having a porous structure, and infiltrating the above described green compact with molten Al to form a composite material containing metal boride and having aluminum nitride as a matrix. The green compact is formed by compressing the mixed powder whose mixing ratio of metal powder to boron nitride powder is 1:1.8 to 1:2.2 (molar ratio) so that porosity of the green compact is 34 to 42%.

Abstract: The invention concerns a wear-resistant coating on rotary metal-cutting tools such as drill bits, countersinks, milling cutters, screw taps, reamers, etc. The coating according to the invention consists essentially of nitrides of Cr, Ti and Al with a unusually high share of Cr atoms, namely 30 to 60% referred to the totality of metal atoms. In multilayer coatings and even more in coatings made of homogeneous mixed phases, this high Cr share results in particularly large tool life distances for the tools hardened with these coatings. These tools exhibit their superiority particularly during dry use without cooling lubricants or with minimal lubrication.

Abstract: The present invention provides a composite pressure-sintered material comprising a continuous phase of hexagonal boron nitride and, dispersed therein, a second material comprising (a) at least one metal nitride selected from the group consisting of silicon, aluminium and titanium nitrides and (b) at least one stable metal oxide; wherein the amount of metal oxide is such that the second material does not contain more than 35% by weight of oxygen. This material possesses a low thermal expansion coefficient and therefore reveals good thermal shock resistance. Another characteristic of this material is its low wettability by molten steel which is thus responsible for excellent chemical resistance to liquid metal. Finally, this material is exceptionally mechanical wear resistant.

Abstract: An object of the present invention is to provide an aluminum nitride material having a high thermal conductivity and reduced volume resistivity at room temperature. An aluminum nitride material has interconnected intergranular phase functioning as electrical conductive phase. The material has a content of the conductive phase of not higher than 20 percent, calculated according to the following formula based on an X-ray diffraction profile. Content of the conductive phase (%)=(Integrated strength of the strongest peak of the conductive phase/Integrated strength of the strongest peak of aluminum nitride phase)×100. Alternatively, the material has an electric current response index of not lower than 0.9 and not higher than 1.1 defined according to the following formula. Electric current response index=(Electric current at 5 seconds after a voltage is applied/Electric current at 60 seconds after a voltage is applied).

Abstract: A material with a low volume resistivity at room temperature composed of an aluminum nitride sintered body is provided. The sintered body contains samarium in a converted content calculated as samarium oxide of not lower than 0.04 mole percent. The sintered body contains an aluminum nitride phase and a samarium-aluminum complex oxide phase. The samarium-aluminum complex oxide phase forms intergranular layers with a low resistivity along the intergranular phase between aluminum nitride grains.

Abstract: An object of the present invention is to preserve the characteristic properties of an aluminum nitride ceramics and reduce its volume resistivity. An aluminum nitride ceramics contains boron atoms in an amount of not lower than 1.0 weight percent and carbon atoms in an amount of not lower than 0.3 weight percent and has a volume resistivity at room temperature of not higher than 1×1012 &OHgr;·cm. Alternatively, an aluminum ceramics comprises aluminum nitride and intergranular phases mainly consisting of boron nitride constituting a conducting path and has a volume resistivity at room temperature of 1×1012 &OHgr;·cm. Such ceramics may be obtained by holding a mixture at least containing aluminum nitride and boron carbide at a holding temperature not lower than 1400° C. and not higher than 1800 ° C. and then sintered at a maximum temperature higher than the holding temperature.

Abstract: An aluminum nitride sintered product which is made mainly of aluminum nitride and contains an yttrium compound in an amount of from 0.6 to 5 wt % as calculated as yttrium oxide, a vanadium compound in an amount of from 0.02 to 0.4 wt % as calculated as vanadium and carbon in an amount of from 0.03 to 0.10 wt % and which has a three-point bending strength of at least 45 kg/mm and a thermal conductivity of at least 150 W/m·K, wherein crystal grains of aluminum nitride have an average grain size of at most 5 &mgr;m.