Abstract: Disclosed herein is a superconducting field effect transistor (FET) which has at least an active region formed from a film of oxide normal conductor, a plurality of electrodes formed from a film of oxide superconductor, and a means to control the current which flows between the electrodes through the active region. Having a much greater electrode distance than the conventional superconducting device, it can be produced easily by lithography without resorting to special techniques.

Abstract: The disclosure relates to a Josephson junction formed by a non-superconducting barrier between two superconducting films of the (R) BaCuO (R=rare earth) group. In order to take advantage of the greater coherence length of superconductors along the CuO planes, i.e. perpendicularly to the long axis "c" of the crystal unit cell, the superconducting film is oriented so that the axis "c" is parallel to the plane of the junction. The device can be applied to Josephson junctions and to SQUIDs.

Abstract: An insulating composition consisting of Bi, Sr, RE, Cu, O or of Tl, Ba, RE, Cu, O (wherein; RE is an element selected from a group consisting of Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and Y) aligns properly with a crystal face of an oxide superconductor because its crystal structure is the same as or similar to that of the oxide superconductor. An insulating composition in which a part of Bi is replaced by Pb is further near the oxide superconductor its construction, and the modulation structure in this insulating composition is mitigated or disappears.

Abstract: A superconducting thin film of a compound oxide represented by YBa.sub.2 Cu.sub.3 O.sub.y in which "y" is a number of 6<y<8 and deposited on a substrate, characterized in that a buffer layer of a compound oxide represented by Y.sub.2 BaCuO.sub.x in which "x" is a number of 4<x<6 is interposed between the superconducting thin film and the substrate.

Abstract: Disclosed is an article that comprises a superconductor-insulator (s-i) layer structure. The superconductor material has nominal composition Ba.sub.1-x M.sub.x BiO.sub.3-y (M is K, Rb, or K and Rb, 0.35<x.ltorsim.0.5, 0<y.ltorsim.0.25). In some preferred embodiments the insulator is a Ba- and Bi containing oxide, exemplarily BaBi.sub.2 O.sub.4, Ba.sub.1-x M.sub.x BiO.sub.3 (0.ltoreq.x<0.35), or Ba.sub.1-x Bi.sub.1+x O.sub.3 (0.ltoreq.x.ltorsim.0.5). In other embodiments the insulator is an insulating oxide with the NaCl structure (e.g., Mg.sub.1-x Ca.sub.x O), an insulating perovskite (e.g., BaZrO.sub.3 ), an insulator with the K.sub.2 NiF.sub.4 structure (e.g., Ba.sub.2 PbO.sub.4), an insulating fluoride with the BaF.sub.2 structure (e.g., Ba.sub.1-x Sr.sub.x F.sub.2), or an insulating fluoride with the NaCl structure (e.g., LiF). Disclosed are also advantageous methods of making an article according to the invention.

Abstract: Novel articles are provided of thin super-conductive thallium-based copper oxide layers on inorganic, usually crystalline substrates. Novel methods are provided for ease of producing such articles, particularly involving sol-gel techniques and laser ablation. The articles have a highly oriented superconductive thallium-based copper oxide film, particularly epitaxial, with high superconductive transition temperatures and desirable electrical properties. The subject articles find use in a wide variety of electronic applications, particularly in microwave and millimeter wave devices.

Abstract: An article comprises an oriented thick film superconducting coating on a polycrystalline substrate. The coating includes at least two highly oriented platelet components ofBi.sub.a Sr.sub.b Ca.sub.c Cu.sub.d O.sub.x (BSCCO)wherein, in one component, a is 2, b is 2, c is 1, d is 2, and x is 8 and, in another component, a is 2, b is 2, c is 0, d is 1, and x is .apprxeq.6, oriented such that said BSCCO platelets are essentially parallel to said substrate. Suitable polycrystalline substrates are MgO and alumina and mullite.

Abstract: A Bi-Sr-Ca-Cu-O system superconducting thin film formed on a substrate comprising [110] single crystals of an ABO.sub.3 type oxide having a perovskite structure, in which a (119) face is selectively grown relative to a substrate surface. The film is formed on the substrate by chemical vapor deposition process. A method of manufacturing a BiSrCaCuO system superconducting film in which an a-axis is oriented preferentially relative to the surface of a substrate comprising MgO (100) single crystals, wherein the chemical composition ratio (Sr+Ca+Cu)/Bi of the BiSrCaCuO system superconducting film is made not less than 3.5. A Bi-Sr-Ca-Cu-O system superconducting thin film formed on a substrate comprising MgO [110] single crystals, in which a (110) face is selectively grown to the substrate surface. The film is formed on the substrate by a chemical vapor deposition process.

Abstract: A superconducting Tl--Pb--Sr--Ca--Cu--O thin film comprised of at least one phase of the formula Tl.sub.0.5 Pb.sub.0.5 Sr.sub.2 Ca.sub.1+n Cu.sub.2+n O.sub.7+2n where n=0, 1 or 2 is disclosed, which is prepared by a process comprising sputtering an oxide film onto a dielectric substrate from an oxide target containing preselected amounts of Tl, Pb, Sr, Ca and Cu, and heating an oxygen-containing atmosphere in the deposited film in the presence of a source of thallium oxide and lead oxide and cooling the film.

Abstract: Rare-earth alkaline metal titanates are used as buffer layers substrates, and oxygen diffusion barriers for the growth of high critical temperature superconductors, ferroelectrics, pyroelectrics and piezoelectrics.

Abstract: According to the present invention, when a superconductive thin film is formed on a substrate of a single crystal, a compound having a composition of SrNdGaO.sub.4 and a K.sub.2 NiF.sub.4 type crystal structure is used as a material employable for the substrate. Alternatively, a single crystal composed of an oxide in which Ca, La and Cr are added to the foregoing compound is used as a material employable for the substrate. Then, a superconductive thin film composed of an oxide is formed on the substrate by employing an epitaxial growing method. Thus, the present invention makes it possible to provide a superconductive material having an excellent property of lattice alignment, a stable and high critical superconductivity temperature and a stable critical superconductivity electric current.