Sputtering Patents (Class 505/475)
  • Patent number: 10811238
    Abstract: There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.6 g/cm3 and equal to or lower than 7.5 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide sintered body is higher than 0.5 atomic % and equal to or lower than 5.0 atomic %, a content rate of zinc to the total of indium, tungsten and zinc in the oxide sintered body is equal to or higher than 1.2 atomic % and equal to or lower than 19 atomic %, and an atomic ratio of zinc to tungsten is higher than 1.0 and lower than 60. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device.
    Type: Grant
    Filed: February 21, 2019
    Date of Patent: October 20, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Miki Miyanaga, Hideaki Awata, Kenichi Watatani
  • Patent number: 8882971
    Abstract: A sputtering apparatus (1) includes: a chamber (10) having an inside maintained in a depressurized state to generate plasma discharge (20); a cathode (22) placed in the chamber (10) and holding a target (21); and a substrate holder (60) holding a substrate (110) so that one surface of the substrate (110) faces the surface of the target (21). The substrate (110) is arranged at an upper portion in the sputtering apparatus (1) with the surface of the substrate (110) facing downward. The target (21) is arranged at a lower portion in the sputtering apparatus (1) with the surface of the target (21) facing upward. The sputtering apparatus (1) includes a heater (65) for heating the substrate (110). The temperature of the substrate (110) is raised by absorbing electromagnetic waves radiated from the heater (65). A method of manufacturing a semiconductor light-emitting element using the sputtering apparatus is also disclosed.
    Type: Grant
    Filed: January 10, 2011
    Date of Patent: November 11, 2014
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Hisayuki Miki, Kenzo Hanawa, Yasunori Yokoyama, Yasumasa Sasaki
  • Patent number: 8864957
    Abstract: Thin films of vanadium oxide having exceptionally high metal-insulator transition properties are synthesized by RF sputtering. An Al2O3 substrate is placed in a sputtering chamber and heated to a temperature up to about 550 degrees Celsius. Ar and O2 gases are introduced into the sputtering chamber at the flow values of about 92.2 sccm and about 7.8 sccm respectively. A voltage is applied to create a plasma in the chamber. A sputtering gun with vanadium target material is ignited and kept at a power of about 250 W. The phase transition parameters of vanadium dioxide thin films, synthesized by RF sputtering, are modulated by exposing the vanadium dioxide thin film to UV (ultraviolet) radiation so as to induce a change in oxygen incorporation of the vanadium dioxide thin film.
    Type: Grant
    Filed: April 28, 2009
    Date of Patent: October 21, 2014
    Assignee: President and Fellows of Harvard College
    Inventors: Shriram Ramanathan, Dmitry Ruzmetov, Venkatesh Narayanamurti, Changhyun Ko
  • Patent number: 8728284
    Abstract: A bulk barium copper sulfur fluoride (BCSF) material can be made by combining Cu2S, BaS and BaF2, heating the ampoule between 400 and 550° C. for at least two hours, and then heating the ampoule at a temperature between 550 and 950° C. for at least two hours. The BCSF material may be doped with potassium, rubidium, or sodium. Additionally, a p-type transparent conductive material can comprise a thin film of BCSF on a substrate where the film has a conductivity of at least 1 S/cm. The substrate may be a plastic substrate, such as a polyethersulfone, polyethylene terephthalate, polyimide, or some other suitable plastic or polymeric substrate.
    Type: Grant
    Filed: March 6, 2012
    Date of Patent: May 20, 2014
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Jesse A. Frantz, Jasbinder S. Sanghera, Vinh Q. Nguyen, Woohong Kim, Ishwar D. Aggarwal
  • Publication number: 20120264612
    Abstract: A superconducting article includes a substrate having a biaxially textured surface. A biaxially textured buffer layer, which can be a cap layer, is supported by the substrate. The buffer layer includes a double perovskite of the formula A2B?B?O6, where A is rare earth or alkaline earth metal and B? and B? are different transition metal cations. A biaxially textured superconductor layer is deposited so as to be supported by the buffer layer. A method of making a superconducting article is also disclosed.
    Type: Application
    Filed: April 15, 2011
    Publication date: October 18, 2012
    Inventors: Amit Goyal, Sung-Hun Wee
  • Publication number: 20120065072
    Abstract: A superconducting metallic glass transition-edge sensor (MGTES) and a method for fabricating the MGTES are provided. A single-layer superconducting amorphous metal alloy is deposited on a substrate. The single-layer superconducting amorphous metal alloy is an absorber for the MGTES and is electrically connected to a circuit configured for readout and biasing to sense electromagnetic radiation.
    Type: Application
    Filed: September 12, 2011
    Publication date: March 15, 2012
    Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY
    Inventor: Charles C. Hays
  • Patent number: 8026197
    Abstract: A method and apparatus for manufacturing superconducting tape through an integrated process, including the steps of: heat-treating a substrate wound on a drum in a reaction chamber; continuously depositing components, constituting a buffer layer, a superconducting layer, a contact resistance layer, and a protective layer of the superconducting tape, which are supplied from a deposition chamber, on the substrate; and heat-treating the substrate deposited with the components.
    Type: Grant
    Filed: September 28, 2007
    Date of Patent: September 27, 2011
    Assignee: Korea Electrotechnology Research Institute
    Inventors: Ho Seop Kim, Sang Soo Oh, Hong Soo Ha, Kyu Jung Song, Dong Woo Ha, Rock Kil Ko
  • Patent number: 8022012
    Abstract: A device for fabricating thin films on a substrate includes a vacuum chamber, a rotatable platen configured to hold one or more substrates within the vacuum chamber, and a housing disposed within the vacuum chamber. The housing contains a heating element and is configured to enclose an upper surface of the platen and a lower portion configured to partially enclose an underside surface of the platen which forms a reaction zone. A heated evaporation cell is operatively coupled to the lower portion of the housing and configured to deliver a pressurized metallic reactant to the reaction zone. The device includes a deposition zone disposed in the vacuum chamber and isolated from the reaction zone and is configured to deposit a deposition species to the exposed underside of the substrates when the substrates are not contained in the reaction zone.
    Type: Grant
    Filed: September 11, 2008
    Date of Patent: September 20, 2011
    Assignee: Superconductor Technologies, Inc.
    Inventors: Brian H. Moeckly, Ward S. Ruby
  • Publication number: 20110034338
    Abstract: A superconducting article includes a substrate having a biaxially textured surface, and an epitaxial biaxially textured superconducting film supported by the substrate. The epitaxial superconducting film includes particles of Ba2RETaO6 and is characterized by a critical current density higher than 1 MA/cm2 at 77K, self-field. In one embodiment the particles are assembled into columns. The particles and nanocolumns of Ba2RETaO6 defects enhance flux pinning which results in improved critical current densities of the superconducting films. Methods of making superconducting films with Ba2RETaO6 defects are also disclosed.
    Type: Application
    Filed: August 4, 2010
    Publication date: February 10, 2011
    Inventors: Amit Goyal, Claudia Cantoni, Eliot Specht, Sung-Hun Wee
  • Publication number: 20110034336
    Abstract: A superconducting article includes a substrate having a biaxially textured surface, and an epitaxial biaxially textured superconducting film supported by the substrate. The epitaxial superconducting film includes particles of Ba2RENbO6 and is characterized by a critical current density higher than 1 MA/cm2 at 77K, self-field. In one embodiment the particles are assembled into columns. The particles and nanocolumns of Ba2RENbO6 defects enhance flux pinning which results in improved critical current densities of the superconducting films. Methods of making superconducting films with Ba2RENbO6 defects are also disclosed.
    Type: Application
    Filed: August 4, 2010
    Publication date: February 10, 2011
    Inventors: Amit Goyal, Sung-Hun Wee, Eliot Specht, Claudia Cantoni
  • Publication number: 20100267568
    Abstract: The present invention relates to a superconducting film having a substrate and a superconductor layer formed on the substrate, in which nano grooves are formed parallel to a current flowing direction on a substrate surface on which the superconductor layer is formed and two-dimensional crystal defects are introduced in the superconductor layer on the nano grooves, and a method of manufacturing this superconducting film. A superconducting film of the invention, which is obtained at low cost and has very high Jc, is useful in applications such as cables, magnets, shields, current limiters, microwave devices, and semifinished products of these articles.
    Type: Application
    Filed: April 30, 2010
    Publication date: October 21, 2010
    Inventors: Kaname Matsumoto, Masashi Mukaida, Yutaka Yoshida, Ataru Ichinose, Shigeru Horii
  • Publication number: 20090048113
    Abstract: A superconducting thin film is disclosed having columnar pinning centers utilizing nano dots, and comprising nano dots (3) which are formed insularly on a substrate (2) and three-dimensionally in shape and composed of a material other than a superconducting material and also other than a material of which the substrate is formed, columnar defects (4) composed of the superconducting material and grown on the nano dots (3), respectively, a lattice defect (6) formed on a said columnar defect (4), and a thin film of the superconducting material (5) formed in those areas on the substrate which are other than those where said columnar defects are formed.
    Type: Application
    Filed: October 9, 2008
    Publication date: February 19, 2009
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Ioan Adrian Crisan, Hideo Ihara, Yoshiko Ihara, Hideyo Ihara, Hidetaka Ihara, Gen-ei Ihara, Chiaki Ihara
  • Patent number: 7491678
    Abstract: A superconducting thin film is disclosed having columnar pinning centers utilizing nano dots, and comprising nano dots (3) which are formed insularly on a substrate (2) and three-dimensionally in shape and composed of a material other than a superconducting material and also other than a material of which the substrate is formed, columnar defects (4) composed of the superconducting material and grown on the nano dots (3), respectively, a lattice defect (6) formed on a said columnar defect (4), and a thin film of the superconducting material (5) formed in those areas on the substrate which are other than those where said columnar defects are formed.
    Type: Grant
    Filed: June 17, 2002
    Date of Patent: February 17, 2009
    Assignees: Japan Science and Technology Agency, National Institute of Advanced Industrial Science and Technology
    Inventors: Ioan Adrian Crisan, Yoshiko Ihara, legal representative, Hideyo Ihara, legal representative, Hidetaka Ihara, legal representative, Gen-ei Ihara, legal representative, Chiaki Ihara, legal representative, Hideo Ihara
  • Publication number: 20080318793
    Abstract: The invention relates to a method for producing a superconductive element to be used as a wire-in-channel superconductor in magnetic resonance imaging (MRI) and in nuclear magnetic resonance (NMR) applications, which superconductive element contains a superconductive wire and a copper component having a longitudinal groove and the superconductive wire being positioned in the groove. In order to produce the wire-in-channel superconductive element by a mechanical contact between the superconductive wire and a wall of the groove in the copper component, at least one contact surface is coated with a lead free solder material before having the mechanical contact. In order to enhance the thermal and electrical conduction and to create a bond between the said components the soldering material is fused in annealing process step.
    Type: Application
    Filed: May 11, 2006
    Publication date: December 25, 2008
    Inventor: Jukka Somerkoski
  • Patent number: 7439208
    Abstract: A method of forming MgB2 films in-situ on a substrate includes the steps of (a) depositing boron onto a surface of the substrate in a deposition zone; (b) moving the substrate into a reaction zone containing pressurized, gaseous magnesium; (c) moving the substrate back into the deposition zone; and (d) repeating steps (a)-(c). In a preferred embodiment of the invention, the substrate is moved into and out of the deposition zone and the reaction zone using a rotatable platen.
    Type: Grant
    Filed: December 1, 2003
    Date of Patent: October 21, 2008
    Assignee: Superconductor Technologies, Inc.
    Inventors: Brian H. Moeckly, Ward S. Ruby
  • Patent number: 7087113
    Abstract: A method for forming a sharply biaxially textured substrate, such as a single crystal substrate, includes the steps of providing a deformed metal substrate, followed by heating above the secondary recrystallization temperature of the deformed substrate, and controlling the secondary recrystallization texture by either using thermal gradients and/or seeding. The seed is selected to shave a stable texture below a predetermined temperature. The sharply biaxially textured substrate can be formed as a tape having a length of 1 km, or more. Epitaxial articles can be formed from the tapes to include an epitaxial electromagnetically active layer. The electromagnetically active layer can be a superconducting layer.
    Type: Grant
    Filed: July 3, 2002
    Date of Patent: August 8, 2006
    Assignee: UT-Battelle, LLC
    Inventor: Amit Goyal
  • Patent number: 7074744
    Abstract: A method of coating a substrate for a high temperature superconductor material is disclosed, including loading a substrate into a first deposition chamber, routing the substrate in the first deposition chamber such that the substrate forms a helical winding in the first deposition chamber, and depositing a first buffer layer to overlie the substrate as the substrate translates along the helical winding. The buffer layer has a biaxial crystallographic texture.
    Type: Grant
    Filed: May 18, 2005
    Date of Patent: July 11, 2006
    Assignee: SuperPower, Inc.
    Inventors: Venkat Selvamanickam, Srinivas Sathiraju
  • Patent number: 6906008
    Abstract: The present invention is a deposition system for the production of coated substrates that provides a first deposition process that subsequently feeds a second deposition process and where the two deposition processes are occurring concurrently. The consecutive deposition system includes two dynamically isolated deposition chambers. The substrate is helically wrapped about a cooling block within the first deposition chamber such that the tape is exposed to a deposition zone a number of times sufficient to correspond to the desired film thickness. A shielding element may be included in the second deposition chamber to limit the size of the second chamber deposition zone and thus the film thickness of the second coating layer.
    Type: Grant
    Filed: June 26, 2003
    Date of Patent: June 14, 2005
    Assignee: SuperPower, Inc.
    Inventors: Venkat Selvamanickam, Srinivas Sathiraju
  • Patent number: 6835696
    Abstract: The present invention provides methods forming the superconductor of as-grown film of MgB2 which is made with magnesium and boron ejected from a magnesium target and a boron target, respectively, each in simultaneously sputtering process. The as-grown film composed of a compound of magnesium and boron is a superconductor without being annealed. The present invention can be applied to fabricate an integrated circuit of superconductor film, because the high temperature annealing process for the as-grown film of MgB2 is unnecessary.
    Type: Grant
    Filed: September 6, 2002
    Date of Patent: December 28, 2004
    Assignee: Communications Research Laboratory Independent Administrative Institute
    Inventors: Atsushi Saito, Akira Kawakami, Hisashi Shimakage, Zhen Wang
  • Patent number: 6809066
    Abstract: Ion texturing methods and articles are disclosed.
    Type: Grant
    Filed: July 30, 2001
    Date of Patent: October 26, 2004
    Assignee: The Regents of the University of California
    Inventors: Ronald P. Reade, Paul H. Berdahl, Richard E. Russo, Leslie G. Fritzemeier
  • Patent number: 6690957
    Abstract: A high temperature superconductor film which is Y—Ba—Cu—O-based and formed on a dielectric substrate 10, and has a Cu composition ratio to the Ba near the upper surface of the film which is higher than a Cu composition ratio to the Ba inside the film. The YBCO-based high temperature superconductor film is formed with a Cu composition on the film surface maintained higher with respect to the stoichiometric composition, whereby the Cu oxide can be easily produced while the production of the yttrium oxides can be depressed. The yttrium oxides cannot be easily produced, which makes it difficult for pores and crystal strains to be generated while the Cu oxide functions as a flux for advancing the crystal growth, whereby the YBCO-based high temperature superconductor film can have good film quality and single crystal. The superconducting elements can be formed of the YBCO-based high temperature superconducting film of such good film quality.
    Type: Grant
    Filed: March 20, 2002
    Date of Patent: February 10, 2004
    Assignee: Fujitsu Limited
    Inventors: Akihiko Akasegawa, Kazunori Yamanaka, Teru Nakanishi
  • Publication number: 20030211948
    Abstract: An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.
    Type: Application
    Filed: April 24, 2003
    Publication date: November 13, 2003
    Inventors: M. Parans Paranthaman, Tolga Aytug, David K. Christen
  • Patent number: 6632539
    Abstract: The polycrystalline thin film is made of a composite oxide of a cubic crystal system which has a pyrochlore type crystalline structure of a composition represented as either AZrO or AHfO (A in the formula represents a rare earth element selected from among Y, Yb, Tm, Er, Ho, Dy, Eu, Gd, Sm, Nd, Pr, Ce and La) formed on the film forming surface of the polycrystalline substrate, wherein the grain boundary misalignment angle between the same crystal axes of different crystal grains in the polycrystalline thin film along a plane parallel to the film forming surface of the polycrystalline substrate are controlled within 30°.
    Type: Grant
    Filed: July 25, 2001
    Date of Patent: October 14, 2003
    Assignees: Fujikura Ltd., International Superconductivity Technology Center,
    Inventors: Yasuhiro Iijima, Mariko Kimura, Takashi Saitoh
  • Publication number: 20030181337
    Abstract: A plurality of superconductor particles are formed being of a first material which is relatively brittle and is selected to be in a superconductive state at a relatively high temperature, typically above 77K which is the temperature of liquid nitrogen. A coating layer is formed on each superconductor particle, the coating layer being of a second material selected to be substantially non-reactive with the first material. The coated particles are then mixed with a third material to form a composite wherein the third material is in proximity to the first material but separated by the second material. The third material is selected to be relatively ductile when compared to the first material and to be driven to a superconductive state by the first material when the first material is in a superconductive state and the third material is in proximity to the first material. The second material protects the third material from oxidation by the first material.
    Type: Application
    Filed: December 24, 2002
    Publication date: September 25, 2003
    Inventor: Matthew J. Holcomb
  • Publication number: 20010027167
    Abstract: A method of manufacturing an epitaxially-strained lattice film of an oxide, in which epitaxially-strained lattices having a good crystalline property are formed by applying RF power to a substrate holder and irradiating positive ions having a moderate energy while preventing damage to the strained lattice film to be stacked by oxygen negative ions. This method simultaneously overcomes both the problem of damage to the film by irradiation of oxygen negative ions, which is peculiar to sputtering of oxides, and the problem of failure to strain due to relaxation of the strain during deposition.
    Type: Application
    Filed: March 1, 2001
    Publication date: October 4, 2001
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Takashi Kawakubo, Takaaki Yasumoto, Kazuhide Abe, Naoko Yanase
  • Patent number: 6280580
    Abstract: A method of manufacturing a double-sided high-temperature superconducting oxide thin film comprises the steps of placing two sintered material targets in a thin film deposition chamber; attaching a single crystal oxide substrate to a substrate supporter piercing through a separator of the thin film deposition chamber; rotating the single crystal oxide substrate, placing two substrate heaters toward both surfaces of the single crystal oxide substrate, and heating the single crystal oxide substrate thereby; applying a power to sputter to the sintered material targets; and depositing a target material on both surfaces of the single crystal oxide substrate by having plasma generated from the two sintered material targets contact thereon.
    Type: Grant
    Filed: November 8, 1999
    Date of Patent: August 28, 2001
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Jeong Dae Suh, Seok Kil Han, Kwang Yong Kang
  • Patent number: 6218341
    Abstract: A process for preparing a superconductor which is a low anisotropy, high temperature superconductor, includes providing a target in molded form comprised of one of the superconductor or constituent elements of the superconductor, the superconductor having a layered crystal structure, having a superconducting transition temperature, Tc, of 110 K or more, and having a composition expressed by Cu1−zMzAe2Cax−1CuxOy where M is at least one member selected from the group consisting of (a) a trivalent ion of Tl, and (b) polyvalent ions of Mo, W, and Re, Ae is at least one of Ba and Sr, x ranges from 1 to 10, and y ranges from 2x+1 to 2x+4, and z ranges from 0<z≦0.5; and forming a film of the superconductor from the target on a substrate by one of sputtering or laser abrasion.
    Type: Grant
    Filed: June 4, 1999
    Date of Patent: April 17, 2001
    Assignee: Agency of Industrial Science and Technology
    Inventors: Hideo Ihara, Masayuki Hirabayashi, Akira Iyo
  • Patent number: 6214772
    Abstract: A method is presented for making a polycrystalline thin film (B) by depositing particles emitted from a target (36) on a substrate base (A) to form the film (B) constituted by the target material while concurrently irradiating the depositing particles with an ion beam generated by an ion source (39) at an angle of incidence, in a range of 50 to 60 degrees to a normal (H) to a film surface, and maintaining a film temperature at less than 300 degrees Celsius. This method is effective in producing an excellent alignment of crystal axes of the grains in the film when the film thickness exceeds 200 nm. The target material includes yttrium-stabilized zirconia but other material can also be used. A layer (C) of a superconducting substance formed on top of the polycrystalline thin film (B) produces a superconducting film (22) exhibiting excellent superconducting properties.
    Type: Grant
    Filed: June 18, 1998
    Date of Patent: April 10, 2001
    Assignee: Fujikura Ltd.
    Inventors: Yasuhiro Iijima, Mariko Hosaka, Nobuo Tanabe, Nobuyuki Sadakata, Takashi Saitoh
  • Patent number: 6174783
    Abstract: The front surface of a semiconductor substrate is formed with a trench. An insulating film is formed on the front surface of the semiconductor substrate including the trench while the bottom of the trench is kept at a higher temperature than the surface opening of the trench. To this end, the back surface of the semiconductor substrate is kept at a higher temperature than the front surface. This is done by heating the back surface of the semiconductor substrate with a halogen lamp. Alternatively, the front surface temperature is made lower than the back surface temperature by blowing a gas for forming an insulating film against the front surface of the semiconductor substrate.
    Type: Grant
    Filed: July 23, 1998
    Date of Patent: January 16, 2001
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Kazutoshi Wakao
  • Patent number: 6172009
    Abstract: An oxide superconductor article is provided having an oxide superconductor film having a thickness of greater than 0.5 microns disposed on a substrate, said article having a transport critical current density (Jc) of greater than or equal to about 105 A/cm2 at 77 K, zero field. The oxide superconductor film is characterized by high Jc and high volume percent of c-axis epitaxial oxide grains, even with thicknesses of up to 1 micron.
    Type: Grant
    Filed: December 22, 1999
    Date of Patent: January 9, 2001
    Assignee: Massachusetts Institute of Technology
    Inventors: John A. Smith, Michael J. Cima, Neville Sonnenberg
  • Patent number: 6156707
    Abstract: A substrate for a superconducting microwave component is composed of a pair of oxide superconductor thin films formed on opposite surfaces of a dielectric substrate, respectively. After Tl-type oxide superconducting thin films are deposited the opposite surfaces of the dielectric substrate, respectively, am annealing is performed in a thallium atmosphere.
    Type: Grant
    Filed: February 3, 1995
    Date of Patent: December 5, 2000
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takashi Matsuura, Kenjiro Higaki, Hideo Itozaki
  • Patent number: 6106615
    Abstract: Specific alloys, in particular Ni-based alloys, that can be biaxially textured, with a well-developed, single component texture are disclosed. These alloys have a significantly reduced Curie point, which is very desirable from the point of view of superconductivity applications. The biaxially textured alloy substrates also possess greatly enhanced mechanical properties (yield strength, ultimate tensile strength) which are essential for most applications, in particular, superconductors. A method is disclosed for producing complex multicomponent alloys which have the ideal physical properties for specific applications, such as lattice parameter, degree of magnetism and mechanical strength, and which cannot be in textured form. In addition, a method for making ultra thin biaxially textured substrates with complex compositions is disclosed.
    Type: Grant
    Filed: February 16, 1999
    Date of Patent: August 22, 2000
    Inventors: Amit Goyal, Eliot D. Specht, Donald M. Kroeger, Mariappan Paranthaman
  • Patent number: 6060433
    Abstract: The invention provides a structure comprising a high temperature superconducting layer deposited on a ceramic polycrystalline ferrite plate suitable for making commercial microwave devices. In one embodiment, the high temperature superconductor is yttrium barium copper oxide (YBCO), the ferrite is yttrium iron garnet (YIG), and the microwave device is a phase shifter. The method of making this embodiment comprises, polishing the YIG plate, depositing biaxially oriented yttria-stabilized zirconia (YSZ) to form a crystalline template using an ion-beam-assisted-deposition technique, depositing a CeO.sub.2 lattice matching buffer layer using pulsed laser deposition, depositing YBCO using pulsed laser deposition, and annealing the YBCO in oxygen. Etching the YBCO to form a meanderline patterned waveguide results in a high figure-of-merit microwave phase shifter when the device is cooled with liquid nitrogen and an external magnetic field is applied.
    Type: Grant
    Filed: January 26, 1999
    Date of Patent: May 9, 2000
    Assignee: NZ Applied Technologies Corporation
    Inventors: Yi-Qun Li, Hua Jiang
  • Patent number: 6057271
    Abstract: A microwave component includes a single dielectric layer, and one pair of conductor layers formed on opposite surfaces of the dielectric layer, respectively, one of the pair of conductor layers forming a ground conductor, and the other of the pair of conductor layers being shaped in a predetermined pattern. The pair of conductor layers are respectively formed of oxide superconductor material layers which are deposited by off-axis sputtering on the opposite surfaces of the dielectric layer, respectively, and which have little defect.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: May 2, 2000
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Higaki Kenjiro, Tanaka Saburo, Itozaki Hideo, Yazu Shuji
  • Patent number: 6037313
    Abstract: The method for forming superconducting films of complex oxide compounds in a process chamber according to the present invention includes the steps of:(a) placing a substrate near a target in a chamber so that the substrate is positioned to be generally perpendicular to a surface of the target, the target comprising a target material of complex oxide compounds; and(b) irradiating a laser beam to the surface of the target to vaporize or sublime the target material forming over the target a flame-shaped plume having on axis generally perpendicular to the surface of the target so that the target material is deposited onto a surface of the substrate, the surface of the substrate maintaining the position to be generally perpendicular to the surface of the target and being generally parallel to the axis of the plume, wherein the target rotates on an axis perpendicular to the surface of the target and the substrate rotates on an axis perpendicular to the surface of the substrate (off-axis geometry), and wherein the l
    Type: Grant
    Filed: September 12, 1995
    Date of Patent: March 14, 2000
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Tatsuoki Nagaishi, Hideo Itozaki
  • Patent number: 5939361
    Abstract: A substrate is set in a reaction chamber, to heat the substrate to a predetermined temperature. Tl, Ba, Ca, Cu and O are supplied to the substrate by a Tl evaporation source and a target, to cause a TlBaCaCuO film to grow on the substrate. The TlBaCaCuO film is crystallized for each formation of each of its blocks each having a layered structure. In an incomplete block which is being formed, the amount of evaporation of Tl by the heating is large, so that the amount of evaporation of Tl varies depending on the ratio of an uncrystallized region on its surface. In a complete block after the formation, the amount of evaporation of Tl by the heating is small, and is approximately constant. Film growth is stopped for a predetermined time period for each formation of the block, to control the amount of supply of Tl depending on the forming step of the block.
    Type: Grant
    Filed: March 17, 1998
    Date of Patent: August 17, 1999
    Assignee: Sanyo Electric Co., Ltd.
    Inventor: Masaaki Nemoto
  • Patent number: 5922651
    Abstract: Herein disclosed is a superconductive thin film formation method of forming a superconductive thin film having a high critical temperature and a low surface resistance. The method comprises a first step of depositing a superconductive thin film layer on a substrate under a first condition. The superconductive thin film layer has a thickness smaller than that of the superconductive thin film. The method further comprises a second step of introducing oxygen under a second condition. The method further comprises a third step of depositing a superconductive thin film layer on the previously deposited superconductive thin film layer under the first condition and fourth step of introducing oxygen under the second condition. The method further comprises a fifth step of repeating the third and fourth steps until the sum of the thicknesses of the superconductive thin film layers is substantially equal to the predetermined thickness of the superconductive thin film.
    Type: Grant
    Filed: November 25, 1997
    Date of Patent: July 13, 1999
    Assignee: Advanced Mobile Telecommunication Technology Inc.
    Inventors: Hiroki Hoshizaki, Masahiro Kawamura
  • Patent number: 5900391
    Abstract: Herein disclosed is a method for depositing a high Tc superconducting thin film. The superconducting thin film is deposited on one surface of a substrate. The substrate is exposed to an electromagnetic wave to heat the substrate during the process for depositing the superconducting thin film. Before the processes for depositing the superconducting thin film and exposing the substrate to the electromagnetic wave, a dummy film is formed on the other surface of the substrate. The dummy film has absorbency of the electromagnetic wave which is higher than that of the substrate. The dummy film together with the substrate is exposed to the electromagnetic wave while the superconducting thin film is deposited on the one surface of the substrate. The superconducting thin film thus deposited has superconductivity and high quality crystal structure.
    Type: Grant
    Filed: November 26, 1996
    Date of Patent: May 4, 1999
    Assignee: Advanced Mobile Telecommunication Technology Inc.
    Inventors: Nobuyoshi Sakakibara, Hiroki Hoshizaki, Yoshiki Ueno
  • Patent number: 5885939
    Abstract: A process for forming a laminate of 123-type copper oxide superconductor thin films having dissimilar crystal axis orientations, a laminate of 123-type thin copper oxide superconductor layers exhibiting excellent superconducting property, and wiring for Josephson junction. A c-axis oriented single crystalline thin film of an oxide superconductor having a Y:Ba:Cu atomic ratio of substantially 1:2:3 and a lattice constant of 11.60 angstroms.ltoreq.c.ltoreq.11.70 angstroms at a temperature of 20.degree. C. under an oxygen partial pressure of 160 Torr is formed on a single crystalline substrate, and an a-axis oriented single crystalline thin film of said oxide superconductor is formed on the above laminated film relying upon a sputter deposition method.
    Type: Grant
    Filed: June 23, 1997
    Date of Patent: March 23, 1999
    Assignees: Kyocera Corporation, International Superconductivity Technology Center, Matsushita Electric Industrial Co., Ltd., Mitsubishi Materials Corporation
    Inventors: Yoshinori Matsunaga, Shuichi Fujino, Akihiro Odagawa, Youichi Enomoto
  • Patent number: 5811375
    Abstract: A superconducting multilayer interconnection comprises a substrate having a principal surface, a first superconducting current path of a c-axis orientated oxide superconductor thin film formed on the principal surface of the substrate, an insulating layer on the first superconducting current path, and a second superconducting current path of a c-axis orientated oxide superconductor thin film formed on the insulating layer so that the first and second superconducting current paths are insulated by the insulating layer. The superconducting multilayer interconnection further comprises a superconducting interconnect current path of an a-axis orientated oxide superconductor thin film, through which the first and second superconducting current paths are electrically connected each other.
    Type: Grant
    Filed: June 30, 1995
    Date of Patent: September 22, 1998
    Assignee: Sumitomo Electric Industries Ltd.
    Inventors: Takao Nakamura, Hiroshi Inada, Michitomo Iiyama
  • Patent number: 5747427
    Abstract: Disclosed is a method of forming a thin junction film including a first thin oxide flilm presenting a superconductivity and second thin oxide film presenting an insulator properties or possibly semiconductive properties with an improved production efficiency as well as improved film quality and characteristics. Employed are first and second targets each having substantially the same chemical composition excepting oxygen content. The first target is sputtered at a target cathode voltage of minus 100 V by the use of voltage derived from an external D.C. voltage source, thereby forming a first thin oxide film. Subsequently, the target is changed over to the second target while changing the target cathode voltage into self-bias voltage of minus 50 V without any change of the other film formation conditions.
    Type: Grant
    Filed: April 26, 1996
    Date of Patent: May 5, 1998
    Assignees: Hokkaido Electric Power Co., Inc., International Superconductivity Technology Center
    Inventors: Norio Homma, Tadataka Morishita
  • Patent number: 5716908
    Abstract: A process for controlling crystalline orientation of an oxide superconductive film includes a first-heat-treatment step, and a second-heat-treatment step. In the first-heat-treatment step, an oxide superconductive film is heated and held in non-oxidizing atmosphere. Accordingly, partial oxygen deficiency is caused in the oxide superconductive film. In the second-heat-treatment step, the oxide superconductive film is heated and held in oxygen-rich atmosphere. Consequently, oxygen is re-introduced into the oxide superconductive film. Thus, crystalline orientation of the oxide superconductive film is altered. The process enables to readily form not only an "a"-axis-oriented oxide superconductive film but also a "b"-axis-oriented oxide superconductive film.
    Type: Grant
    Filed: November 2, 1995
    Date of Patent: February 10, 1998
    Assignees: Toyota Jidosha Kabushiki Kaisha, Superconductivity Research Laboratory of International Superconductivity Technology Center
    Inventors: Koji Kawamoto, Izumi Hirabayashi
  • Patent number: 5691280
    Abstract: A thin film which is substantially free of measurable surface defects due to second-phase inclusions is disclosed. The film is composed of multilayered strata of a first metal oxide interspersed with single molecular layers of a second metal oxide, where the second metal oxide is effective to absorb second-phase defects which form in the first oxide layers.
    Type: Grant
    Filed: May 14, 1996
    Date of Patent: November 25, 1997
    Assignee: Varian Associates, Inc.
    Inventors: James N. Eckstein, Ivan Bozovic
  • Patent number: 5679625
    Abstract: A method of making a superconducting thin film of a Y--Ba--Cu--O series material by using a diode parallel plate type sputtering apparatus including a vacuum chamber, a substrate disposed within the vacuum chamber and having a substantially flat surface on which the superconducting thin film is to be formed, and a plate-shaped target functioning as a cathode and disposed within the vacuum chamber to parallelly face to the flat surface of the substrate, the target being made of the same material as the superconducting thin film, a plasma gas being introduced into the vacuum chamber, and a voltage being applied between the cathode and the substrate, wherein the method comprises the steps of applying a high frequency voltage having a frequency higher than 40 MHz between the cathode and the substrate to generate plasma of the introduced gas, superimposing a DC voltage (V) on the high frequency voltage in a polarity that the cathode becomes negative, and setting the DC voltage at a value where the DC voltage is su
    Type: Grant
    Filed: November 22, 1995
    Date of Patent: October 21, 1997
    Assignees: Nippon Steel Corporation, International Superconductivity Technology Center, Mitsubish Electric Corporation, Hokkaido Electric Power Co., Inc.
    Inventors: Wataru Ito, Tadataka Morishita, Norio Homma, Yukihisa Yoshida
  • Patent number: 5667650
    Abstract: An improved device for off-axis magnetron sputter deposition of inorganic oxide compounds having a sputter gun, target, substrate, gas flow means and enclosure chamber wherein the improvement comprises a hollow gas flow manifold positioned between the substrate and the target having at least one gas inlet and at least one outlet opening on the manifold, said outlet opening positioned to direct the gas flow away from the target and in the direction of the substrate, and a process for such deposition are disclosed.
    Type: Grant
    Filed: February 14, 1995
    Date of Patent: September 16, 1997
    Assignee: E. I. Du Pont de Nemours and Company
    Inventors: Dean Willett Face, Kirsten Elizabeth Myers
  • Patent number: 5650378
    Abstract: The present invention relates to a polycrystalline thin film deposit acting as a substrate material composed of grains of a cubic structure in which the intergranular misorientation, defined as the orientation difference between the a-axes (or b-axes) of the neighboring grains, is less than 30 degrees. Such a substrate base is produced by depositing a target material on a base material by sputtering while irradiating the substrate base with ion beams at an oblique angle to the base. The preferred range of the oblique angle is between 40 to 60 degrees. Examples are presented of application of such textured polycrystalline substrate base for the production of superconducting oxide thin layer of outstanding superconducting properties.
    Type: Grant
    Filed: August 3, 1995
    Date of Patent: July 22, 1997
    Assignee: Fujikura Ltd.
    Inventors: Yasuhiro Iijima, Nobuo Tanabe
  • Patent number: 5648321
    Abstract: Described is a process for manufacturing thin films by periodically depositing (DEP) a number of block layers consisting of different base materials on a substrate (multilayer deposition), wherein the thickness of the layers (LT) is restricted to one to 20 monolayers and deposition as well as crystallization of the thin film is completed at approximately constant temperature without performing a separate annealing step. The method can be used to produce thin films of high-T.sub.c -superconductors. It allows a better control of the crystal growth of ternary or higher compounds with comparatively large unit cells.
    Type: Grant
    Filed: September 13, 1993
    Date of Patent: July 15, 1997
    Assignee: International Business Machines Corporation
    Inventors: Johannes Georg Bednorz, Andrei Catana, Jean Pierre Locquet, Erich Maechler, Carl Alexander Mueller
  • Patent number: 5635454
    Abstract: A cold surface is obtained by coating a mat of ceramic particles that are bound together with a sol-gel binder and cooling the surface with a cryogen that wicks to the surface through pores in the mat.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: June 3, 1997
    Assignee: The Boeing Company
    Inventors: Anna L. Baker, Darryl F. Garrigus
  • Patent number: 5629268
    Abstract: A process for depositing successively a plurality of thin films on a bottom superconductor layer made of oxide superconductor deposited on a substrate in a single chamber under a condition, the bottom superconductor layer is heated in ultra-high vacuum at a temperature which is lower than the oxygen-trap temperature (T.sub.trap) at which oxygen enter into the oxide superconductor but higher than a temperature which is lower by 100.degree. C. than the oxygen-trap temperature (T.sub.trap -100.degree. C.) and then the first thin film is deposited thereon.
    Type: Grant
    Filed: June 1, 1995
    Date of Patent: May 13, 1997
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: So Tanaka, Takao Nakamura, Michitomo Iiyama
  • Patent number: 5595959
    Abstract: A method of forming a high-Tc microbridge superconductor device is disclosed, which comprises the steps of forming an inclined step on the surface of a substrate, the inclined step having an angle of inclination of from about 20 to about 80 degrees; depositing a layer of c-axis oriented superconductor material overlying the substrate such that there is a break in the layer of superconductor material at the inclined step; and depositing a layer of normal material overlying the layer of c-axis oriented superconductor material.
    Type: Grant
    Filed: November 22, 1994
    Date of Patent: January 21, 1997
    Assignee: Biomagnetic Technologies, Inc.
    Inventors: Mark S. DiIorio, Shozo Yoshizumi, Kai-Yuen Yang