Etching Patents (Class 505/728)
  • Patent number: 4992415
    Abstract: A method for fabricating a ceramic superconductor comprising the following steps: mixing a copper or copper alloy metal, a first metal oxide or carbonate which includes one element selected from group IIA of the Chemical Periodic Table, and a second metal oxide or carbonate which includes one element selected from group IIIB of the Chemical Periodic Table to form a copper/ceramic mixture; heting a copper/ceramic mixture to a temperature in the range between 900.degree.-1100.degree. C.; and cooling the heated copper/ceramic mixture slowly, thereby forming a superconductive material. The copper/ceramic mixture may be extruded through a die prior to the heating step, thereby forming a superconductor of desired shape.
    Type: Grant
    Filed: July 31, 1987
    Date of Patent: February 12, 1991
    Assignee: Olin Corporation
    Inventors: Sankaranarayanan Ashok, Bruce M. Guenin
  • Patent number: 4980338
    Abstract: Superconducting ceramic patterns are produced by dry etching. A superconducting ceramic film is deposited by plasma CVD on a semiconductor substrate which is covered with a blocking film in advance. The ceramic film is coated with a photomask followed by dry etching in order to remove portions of the ceramic in accordance with the prescribed pattern. The etchant includes bromine.
    Type: Grant
    Filed: November 15, 1988
    Date of Patent: December 25, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 4971948
    Abstract: In a method of manufacturing a device comprising a film of an oxide superconducting material which comprises an alkaline earth metal, another metal component, copper and oxygen. A superconductor precursor material comprising copper oxide, alkaline earth metal fluoride and another metal or metal oxide, is provided on a substrate in the form of a film. The film is covered with a diffusion barrier against water in accordance with a pattern which is complementary to a desired pattern of superconducting material. Subsequently, the superconducting material is formed in the uncovered portions of the pattern by means of a treatment at an increased temperature in the presence of water and oxygen.
    Type: Grant
    Filed: February 1, 1989
    Date of Patent: November 20, 1990
    Assignee: U.S. Philips Corporation
    Inventors: Bernard Dam, Gerrit J. Van der Kolk, Maritza G. J. Heijman
  • Patent number: 4966885
    Abstract: A method for fabricating thin smooth films of a planar metal oxide superconductor is disclosed. Fabrication of the superconductor film comprises depositing, on a substrate, a film of the planar metal oxide superconductor having a thickness greater than desired, and thinning at least a portion of the superconductor film to the desired thickness. In a particular embodiment of the method, thinning comprises exposing the superconductor film to a low energy ion beam directed at grazing incidence to the superconductor surface. Thin superconductor films fabricated in accordance with this method typically have substantially smooth surfaces and can have relatively low RF loss. These films can be advantageously used, inter alia, in RF striplines, microwave cavities and waveguides, bolometers, SQUIDs, and other Josephson junction devices.
    Type: Grant
    Filed: August 25, 1989
    Date of Patent: October 30, 1990
    Assignee: AT&T Bell Laboratories
    Inventor: Arthur F. Hebard
  • Patent number: 4957900
    Abstract: A superconducting ceramic film is deposited on a substrate sputtering. In virtue of the low thermal conductivity of ceramic, a laser beam is radiated to the ceramic film in order to remove the irradiated portion by sublimation and produce a pattern on the ceramic film.
    Type: Grant
    Filed: March 28, 1988
    Date of Patent: September 18, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shumpei Yamazaki
  • Patent number: 4956335
    Abstract: A patterned crystalline superconducting layer is formed by first providing a copper oxide lift-off layer under an amorphous metal oxide superconducing precursor layer and then photolithographically forming a pattern in the layers. The patterned layers are then heat treated to form the final crystalline superconducting layer.
    Type: Grant
    Filed: June 20, 1988
    Date of Patent: September 11, 1990
    Assignee: Eastman Kodak Company
    Inventors: John A. Agostinelli, Gerrit Lubberts
  • Patent number: 4937226
    Abstract: A large number of small superconducting solenoids are produced on a common substrate simultaneously. Two parallel slits (5) passing through a silicon wafer are dug in such manner that a core (10) is left between the slits and then a superconducting thin film of compound oxide is deposited around the core (10).
    Type: Grant
    Filed: July 18, 1988
    Date of Patent: June 26, 1990
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Masanori Nishiguchi
  • Patent number: 4933318
    Abstract: A method of manufacturing a thin film of an oxidic superconducting material in accordance with a pattern, in which a pattern is manufactured by means of etching using reactive ions and a mask of aluminium oxide or silicon oxide, said method enabling patterns having line widths smaller than 2 .mu.m to be manufactured with great accuracy without influencing the composition of the superconducting thin film in such a manner that the superconducting properties deteriorate.
    Type: Grant
    Filed: December 12, 1988
    Date of Patent: June 12, 1990
    Assignee: U.S. Philips Corporation
    Inventor: Maritza G. J. Heijman