Abstract: Ceramic compositions which exhibit the phenomenon of superconductivity are disclosed. Methods of making and using the compositions are included. The compositions comprise 1-2-3 ceramic compositions (e.g., Y, Ba, Cu/Ag) with the fourth constituent comprising sulfur, selenium or tellurium. Unexpectedly high temperature (e.g., non-cryogenic) and essentially atmospheric pressure superconductor characteristics are shown.
Abstract: A laminate article consists of a substrate and a biaxially textured protective layer over the substrate. The substrate can be biaxially textured and also have reduced magnetism over the magnetism of Ni. The substrate can be selected from the group consisting of nickel, copper, iron, aluminum, silver and alloys containing any of the foregoing. The protective layer can be selected from the group consisting of gold, silver, platinum, palladium, and nickel and alloys containing any of the foregoing. The protective layer is also non-oxidizable under conditions employed to deposit a desired, subsequent oxide buffer layer. Layers of YBCO, CeO2, YSZ, LaAlO3, SrTiO3, Y2O3, RE2O3, SrRuO3, LaNiO3 and La2ZrO3 can be deposited over the protective layer. A method of forming the laminate article is also disclosed.
Type:
Grant
Filed:
May 2, 2000
Date of Patent:
September 17, 2002
Assignee:
UT-Battelle, LLC
Inventors:
Amit Goyal, Donald M. Kroeger, Mariappan Paranthaman, Dominic F. Lee, Roeland Feenstra, David P. Norton
Abstract: A new use as high critical temperature superconductors, of a known family of partially oxidized bi-metal compounds in which the two metals are copper and barium. These compounds become superconductive at least at a temperature higher than 5.degree. K. but less than or equal to 77.degree. K., when oxygen vacancies are located symmetrically with respect to the axes of their lattice structure.
Abstract: A superconductive fullerene and a process for making such superconductive fullerene are provided. The process involves contacting a quantity of fullerene with the vapor of an interhalogen compound such as ICl. The halogen doped fullerenes exhibited a transition temperature above 60 K.
Type:
Grant
Filed:
December 14, 1994
Date of Patent:
October 1, 1996
Assignee:
The Research Foundation of State University of New York at Buffalo
Inventors:
Yi-Han Kao, Liwei Song, Deborah D. L. Chung, Kevin T. Fredette
Abstract: Circuit board devices are provided based on use of high temperature superconducting ceramic polymers comprising high temperature superconducting ceramic powders distributed in electrically insulative organic polymers which are thermosetting by reaction of a two-part liquid mixture or by catalytic or photoinitiation of a one-part liquid. The ceramic domains transmit their superconductivity across the insulating barriers of organic polymers enabling formation of superconductive lines and superconducting bonds to electronic devices to be adhered to circuit boards, and providing superconducting circuitry.
Abstract: A superconductive oxide material having an infinite layer structure and having the following formula:A.sub.p B.sub.q Cu.sub.2 O.sub.4.+-.rwherein A and B are different and each represent an element selected from lanthanoid elements and elements belonging to Groups IA, IIA and IIIA of the Periodic Table, p is between 0.9 and 1.1, q is between 0.9 and 1.1 and r is between 0 and 0.6. The oxide material has a crystal structure belonging to a tetragonal system of P4/mmm and 1-123 having the following lattice parameters:3.8.ANG..ltoreq.a.ltoreq.4.0.ANG.7.6.ANG..ltoreq.c.ltoreq.8.0.ANG.or to an orthorhombic system of Pmmm and I-47 having the following lattice parmeters:3.8.ANG..ltoreq.a.ltoreq.3.95.ANG.3.82.ANG..ltoreq.b.ltoreq.4.0.ANG.7.6.ANG..ltoreq.c.ltoreq.8.0.ANG..
Type:
Grant
Filed:
April 12, 1993
Date of Patent:
August 29, 1995
Assignees:
Central Research Institute of Electric Power Industry, Tohoku Electric Power Co., Inc., International Superconductivity Technology Center
Abstract: The disclosed substance has a composition of a general chemical formula ofBi.sub.2 -(Sr.sub.2 Ca.sub.1).sub.1-x (La.sub.2 Y.sub.1).sub.x -Cu.sub.y -O.sub.z,where 0.4.ltoreq.x.ltoreq.1, y=2 and z=9-10.5, wherein said substance is an insulator or a semiconductor in the dark, and has a photoconductivity Q(.lambda.,T) in conjugate with superconductivity of a superconductor of an adjacent component of the Bi-SrCa-LaY-Cu-O system at and below a critical temperature (T) of less than 105-115K and below 65-85K at photoexcitation in an optical wavelength range (.lambda.) of 420-670 nm. The present invention relates to a method for producing the same and a superconductive optoelectronic device by using the same. The present invention also relates to an organized integration of the element or device into an apparatus to further develop a new field of "Superconductive Optoelectronics.
Abstract: Superconducting materials and methods of forming superconducting materials are disclosed. Highly oxidized superconductors are heated at a relatively high temperature so as to release oxygen, which migrates out of the material, and form a non-superconducting phase which does not diffuse out of grains of the material. The material is then reoxidized at a lower temperature, leaving the non-superconducting inclusions inside a superconducting phase. The non-superconducting inclusions act as pinning centers in the superconductor, increasing the critical current thereof.
Type:
Grant
Filed:
October 28, 1991
Date of Patent:
July 4, 1995
Assignee:
The Regents of the University of California
Abstract: Polycrystalline high-T.sub.c superconductors of the formula M.sub.m E.sub.e RO.sub.x, which contain grains which are crystallographically aligned to the greatest possible extent, where M is at least one trivalent element such as a lanthanide element, E is at least one divalent element such as an alkaline earth element and R is at least one transition metal such as Cu, and x denotes the proportion of oxygen, are obtained by substituting a part of the alkaline earth element by a foreign element, preferably an alkali-metal element, which is no longer present in the product after the reaction sintering and sintering except for contents in the ppm to parts per thousand range and brings about the orientation effect. This produces a material which contains a slight deficit of E and optionally M, has an unaltered critical temperature and is substantially more resistant to external agents than equivalent known materials. A post-treatment in a stream of air or oxygen is unnecessary.
Type:
Grant
Filed:
August 23, 1990
Date of Patent:
May 9, 1995
Assignee:
Hoechst Aktiengesellschaft
Inventors:
Joachim Maier, Albrecht Rabenau, deceased, Pandijan Murugaraj
Abstract: A superconductive fullerene and a process for making such superconductive fullerene are provided. The process involves contacting-a quantity of fullerene with the vapor of an interhalogen compound such as ICl. The halogen doped fullerenes exhibited a transition temperature above 60 K.
Type:
Grant
Filed:
January 25, 1993
Date of Patent:
January 10, 1995
Assignee:
The Research Foundation of State University of New York at Buffalo
Inventors:
Yi-Han Kao, Liwei Song, Deborah D. L. Chung, Kevin T. Fredette
Abstract: Provided is an oxide superconductor in which superconducting layer is sandwiched between two blocking layers having different compositions. Available superconducting layers include a one-layer system having one Cu-O.sub.2 sheet, a two-layer system having a mediating layer sandwiched between two Cu-O.sub.2 sheets, and a three-layer system having mediating layers sandwiched individually between three Cu-O.sub.2 sheets.Since the blocking layers are of different compositions, seventy-seven kinds of oxide superconductors can be obtained.
Abstract: The disclosed superconductive material has a characteristic in accordance with which electrical resistance disappears at a temperature of at least more than the boiling point of 20.3.degree. K. (-252.7.degree. C.) of liquid hydrogen and relates to La-Ba-Cu-O series superconductive material.Said superconductive material consists essentially of a composition having the formula(La.sub.1-x M.sub.x).sub.2 CuO.sub.4-x/2wherein, M=Ba or Ba(Sr, Ca) and x=0.04.about.0.20 as a main body, wherein the material has a K.sub.2 NiF.sub.4 crystal structure.
Abstract: Superconducting, metal-doped fullerenes are provided, along with processes for their preparation in relatively high stoichiometric purity. In one embodiment, the processes provide fullerenes of the formula M.sub.x C.sub.q, where M is a metal, x is greater than 0 but less than about 10, and q is at least 60. The processes comprise contacting C.sub.q with metal in an amount and under reaction conditions effective to produce a compound having the formula M.sub.y C.sub.q, and contacting said M.sub.y C.sub.q with a portion of C.sub.q in an amount and under reaction conditions effective to produce said M.sub.x C.sub.q, wherein y is greater than x.
Type:
Grant
Filed:
April 16, 1993
Date of Patent:
September 20, 1994
Assignee:
The Trustees of the University of Pennsylvania
Inventors:
John P. McCauley, Jr., Qing Zhu, Gavin Vaughan, Nicole Coustel
Abstract: An oxide superconducting material having a composition represented by a formulaTlSr.sub.2 (Sr.sub.n-x Y.sub.x)Cu.sub.n+1 O.sub.5+2nwherein n=1 or 2 and 0.1.ltoreq.x.ltoreq.n is provided. This material has a high critical current density Jc even by sintering at a relatively low temperature of 850.degree.-880.degree. C.
Abstract: The present invention relates to a new process for making metal fulleride compositions having the formula A.sub.n (C.sub.x).sub.m, wherein A is a metal cation and C.sub.x is a fullerene anion, preferably C.sub.x is C.sub.60 or C.sub.70, wherein n is a number equal to the absolute value of the valence of the fullerene anion, wherein m is equal to the absolute value of the valence of A, wherein the values of n and m are divided by their greatest common factor, if any, and wherein the metal fulleride composition is neutral in charge. This process comprises reacting a metal with a fullerene in a solvent or mixture of solvents in which the fullerene is at least partly soluble at a temperature from greater than the freezing point to equal to or less than the boiling point of the solvent, for a time sufficient to form the metal fulleride composition.
Abstract: A superconducting material higher in superconducting transition temperature and superconducting volume ratio than any conventional one is provided, which comprises a fullerene doped with rubidium and cesium. This fullerene system superconducting material makes it possible to improve both the superconducting transition temperature and superconducting volume ratio by having rubidium and cesium doped thereinto compared with any conventional fullerene systems. If the chemical composition of this super conducting material is expressed as Rb.sub.x Cs.sub.y C.sub.n, x and y are arbitrary if an equation x+y=3 is satisfied, preferable to be x=2 and y=1, further preferable to be x=1 and y=s. The superconducting transition temperature Tc and superconducting volume ratio when x=1 and y=2 or x=2 and y=1 are superior to those when x=3 and y=0 or x=0 and y=3, respectively.
Type:
Grant
Filed:
July 2, 1992
Date of Patent:
March 15, 1994
Assignee:
NEC Corporation
Inventors:
Katsumi Tanigaki, Thomas Ebbesen, Sadanori Kuroshima, Junichiro Mizuki
Abstract: The present invention provides a layered copper oxide as an insulator for superconductor or as a superconductor, which has a chemical composition represented by the formula of (R,Ce).sub.3 Sr.sub.2 Cu.sub.2 (M,Cu)O.sub.11, wherein R is a rare earth element other than Ce and M is one or both of Pb and T1, and has a crystal structure comprising a (M,Cu)Sr.sub.2 (R,Ce)Cu.sub.2 O.sub.7 ; unit of a TlBa.sub.2 CaCu.sub.2 O.sub.7 (1-2-1-2)-type structure and a [(R,Ce)O.sub.2 ].sub.2 unit of a fluorite-type structure alternately put on each other, or a chemical composition represented by the formula of (R,Ce).sub.3 Sr.sub.2 Cu.sub.2 (M,Cu)O.sub.10+z, wherein R is a rare earth element other than Ce, M is one or both of Pb or Tl, and has a crystal structure comprising a (R,Ce)Sr.sub.2 Cu.sub.2 (Cu,M)O.sub.6+z unit of a YBa.sub.2 Cu.sub.3 O.sub.3 O.sub.6+.delta. -type structure and a [(R,Ce)O.sub.2 ].sub.2 unit of a fluorite-type structure alternately put on each other, wherein z is in the range of 0.ltoreq.z.ltoreq.
Type:
Grant
Filed:
October 25, 1991
Date of Patent:
November 16, 1993
Assignees:
Matsushita Electric Industrial Co., Ltd., International Superconductivity Technology Center, Central Research Institute of Electric Power Industry, Ube Industries, Ltd.
Abstract: An oxide superconductor comprises a composition represented by the composition formula: (Nd.sub.x --Ce.sub.y --L.sub.z).sub.2 CuO.sub.4-d (wherein L is an element selected from Ca and Mg, and x+y+z=1). The compositions of Nd, Ce and L of the oxide superconductor corresponds to a point falling inside an area of Nd--Ce--L ternary diagram surrounded by straight lines (A-B), (B-C), (C-D) and (D-A) connecting point (A) with point (B), point (B) with point (C), point (C) with point (D) and point (D) with point (A), respectively, the points (A), (B), (C) and (D) being points (x=1, y=0, z=0), (x=0.4, y=0.6, z=0), (x=0.4, y=0.3, z=0.3) and (x=0.1, y=0, z=0.9), respectively, in the Nd--Ce--L ternary diagram. Above-described Nd--Ce--L--Cu--O oxides can exhibit superconductivity within a wide range of composition when heat-treated in an atmosphere of nitrogen.
Type:
Grant
Filed:
October 9, 1991
Date of Patent:
September 14, 1993
Assignees:
Mitsubishi Metal Corporation, Hitachi, Ltd., International Superconductivity Technology Center
Abstract: Superconducting, metal-doped fullerenes are provided, along with processes for their preparation in relatively high stoichiometric purity. In one embodiment, the processes provide fullerenes of the formula M.sub.3 C.sub.60 where M is an alkali metal. The processes comprise contacting C.sub.60 with alkali metal in an amount and under reaction conditions effective to produce a compound having the formula M.sub.y C.sub.60, where y is greater than 3, and contacting said M.sub.y C.sub.60 with a portion of C.sub.60 in an amount and under reaction conditions effective to produce said M.sub.3 C.sub.60.
Type:
Grant
Filed:
August 1, 1991
Date of Patent:
June 29, 1993
Assignee:
The Trustees of the University of Pennsylvania
Inventors:
John P. McCauley, Jr., Qing Zhu, Gavin Vaughan, Nicole Coustel
Abstract: A piezoresistive pressure transducer employing a sapphire force collector diaphragm having piezoresistive films of silicon epitaxially formed on a major surface thereof, preferably in a Wheatstone bridge pattern. The silicon piezoresistive film is preferably of a thickness of from 1,000 to 60,000 angstroms and is doped with boron in the range of from 5.times.10.sup.17 to 9.times.10.sup.20 atoms/cc. Electrical lead traces and electrical contact pads are also formed on the major surface of the force collector diaphragm. The diaphragm is mounted on a pressure cell base having a cavity in the upper surface thereof, the diaphragm enclosing the cavity so as to form a chamber with the piezoresistive silicon films within said chamber. The diaphragm is hermetically bonded by a ceramic glass to the base in a vacuum such that the chamber provides a vacuum pressure reference.
Abstract: A technique which produces macroscopically homogeneous-shaped parts utilizes oxide-metal superconductor composites by providing a mixture of a superconductor oxide, a metal and either a oxygen or a fluorine donor.
Type:
Grant
Filed:
November 2, 1987
Date of Patent:
September 8, 1992
Assignee:
The University of Alabama
Inventors:
In-Gann Chen, Doru M. Stefanescu, Subhayu Sen, Joel Betts
Abstract: Ceramic superconductor materials, e.g., of rare earth/alkaline earth metal/transition metal/oxygen type, contain an effective stabilizing amount of fluorine atoms distributed therein in a concentration gradient decreasing from the external face surface of the material to the core region thereof; advantageously the fluorine atoms are principally distributed in an external protective diffusion barrier layer.
Type:
Grant
Filed:
December 21, 1990
Date of Patent:
July 21, 1992
Assignee:
Rhone-Poulenc Chimie
Inventors:
Bernard Chevallier, Jean-Michel Dance, Jean Etourneau, Lucien Lozano, Alain Tressaud, Robert Tournier, Andre Sulpice, Jacques Chaussy, Pascal Lejay
Abstract: Vanadium-containing superconducting oxides are disclosed having critical temperature (T.sub.c) values of above about 100.degree. K. and preferably about 110.degree.-150.degree. K., together with predicted current density (J.sub.c) values on the order of 10.sup.4 -10.sup.5 amperes/cm.sup.2. The oxides hereof are moreover relatively ductile and easily bulk sintered to give end products having desirable superconductivity characteristics. Certain preferred oxides of the invention are defined by the general formula:(V.sub.1-x M.sub.x).sub.i (A.sub.1-y M.sub.y).sub.j Q.sub.k Cu.sub.m O.sub.r.+-.t I.
Type:
Grant
Filed:
October 1, 1990
Date of Patent:
March 24, 1992
Assignee:
University of Kansas
Inventors:
Kai W. Wong, Wai-Yim Ching, Peter C. W. Fung, Fui T. Chan, Zhengzhi Sheng
Abstract: Compositions having the nominal formulaTl.sub.e Pb.sub.a Ca.sub.b Sr.sub.c Cu.sub.d O.sub.xwherein a is from about 1/10 to 3/2,b is from about 1 to 4,c is from about 1 to 3d is from about 1 to 5e is from about 3/10 to 1x=(a+b+c+d+e+y) where y is from about 1/2 to 3,are superconducting. Processes for manufacturing such compositions and for using them are disclosed.
Abstract: A superconductor essentially comprises a three-component metallic oxide including yttrium, barium, and copper (Y-Ba-Cu three-component metallic oxide) and an oxide of an element having a melting point lower than that of the three-component metallic oxide and having 0.1 to 5.0 wt % in form of the oxide thereof. The element is preferably of bismuth, antimony, boron, lead, and praseodymium.
Abstract: A superconductive material with a superconducting critical temperature of at least 77.degree. K. comprising 20 at. % Nb, 10 at. % Si, 10 at. % Al and 60 at. % O is provided by simultaneous vapor-phase physical deposition or sputtering of Nb, Si and Al onto a heated sapphire substrate under oxygen-containing atmosphere, followed by a rapid quenching or post-oxidization of Nb-Si-Al ternary system composition having an Nb/Si/Al atomic ratio of 2/1/1. The high critical temperature allows abundantly existing, cheap available liquid nitrogen to be used as a cryogen for developing superconductivity.
Abstract: Compositions containing a crystalline phase of the formula Tl.sub.2 Ba.sub.2 CuO.sub.6+x wherein x is from 0 to 0.5. Processes for manufacturing such compositions and for using them are disclosed.
Type:
Grant
Filed:
March 14, 1988
Date of Patent:
May 29, 1990
Assignee:
E. I. Du Pont de Nemours and Company
Inventors:
Jagannatha Gopalakrishnan, Munirpallam A. Subramanian