Abstract: The films of this invention are high temperature superconducting (HTS) thin films specifically optimized for microwave and RF applications. In particular, this invention focuses on compositions with a significant deviation from the 1:2:3 stoichiometry in order to create the films optimized for microwave/RF applications. The RF/microwave HTS applications require the HTS thin films to have superior microwave properties, specifically low surface resistance, Rs, and highly linear surface reactance, Xs, i.e. high JIMD. As such, the invention is characterized in terms of its physical composition, surface morphology, superconducting properties, and performance characteristics of microwave circuits made from these films.

Abstract: Disclosed is a superconducting compound which has a structure obtained by partially substituting oxygen ions of a compound, which is represented by the following chemical formula; LnTMOPh [wherein Ln represents at least one element selected from Y and rare earth metal elements (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), TM represents at least one element selected from transition metal elements (Fe, Ru, Os, Ni, Pd and Pt), and Pn represents at least one element selected from pnictide elements (N, P, As and Sb)] and has a ZrCuSiAs-type crystal structure (space group P4/nmm), with at least one kind of monovalent anion (F?, Cl? or Br?). The superconducting compound alternatively has a structure obtained by partially substituting Ln ions of the compound with at least one kind of tetravalent metal ion (Ti4+, Zr4+, Hf4+, C4+, Si4+, Ge4+, Sn4+ or Pb4+) or a structure obtained by partially substituting Ln ions of the compound with at least one kind of divalent metal ion (Mg2+, Ca2+, Sr2+ or Ba2+).

Abstract: The films of this invention are high temperature superconducting (HTS) thin films specifically optimized for microwave and RF applications. In particular, this invention focuses on compositions with a significant deviation from the 1:2:3 stoichiometry in order to create the films optimized for microwave/RF applications. The RF/microwave HTS applications require the HTS thin films to have superior microwave properties, specifically low surface resistance, Rs, and highly linear surface reactance, Xs, i.e. high JIMD. As such, the invention is characterized in terms of its physical composition, surface morphology, superconducting properties, and performance characteristics of microwave circuits made from these films.

Abstract: A new class of fundamental devices and methods for their manufacture and use. The bulk magnetic field replicators of the present invention require no precision machining or alignment to accurately reproduce magnetic fields of any complexity, nor extreme positional stability to maintain superconductivity. Such bulk devices may be formed of either low or high critical temperature superconductive materials, but are particularly adapted to formation from high critical temperature materials.

Abstract: There are disclosed a high temperature superconductive material which can be plastically deformed, processed optionally into predetermined configurations and industrially mass produced and a method of manufacturing a formed body of the high temperature superconductive material. Mixed is a powder raw material which is mainly composed of: 10 to 50 mol % of at least one amide or nitride of alkali metal of Li, Na or K; 10 to 60 mol % of cyanide containing at least one metal selected from aluminum, copper, silver or gold; 5 to 50 mol % of at least one pure metal selected from aluminum, copper, silver or gold; and 10 mol % or less of at least one alkaline earth metal selected from Be, Mg, Ca, Sr or Ba. The powder raw material is pressed, and heated and sintered at the temperature of 673 K to 1553 K. In this manner, obtained is the plastically deformable high temperature superconductive material which can be optionally processed through forging, rolling and the like.

Abstract: In accordance this invention, there is provided a process for making a bulk superconductive material. In the first step of this process, a diffusion couple is formed from superconductor oxide and impurity oxide. Thereafter, the diffusion couple is heated to a temperature in excess of 800 degrees Centigrade, cooled at a controlled rate, and annealed.

Abstract: A novel metallic oxide of a Ln-Ca-Sr-Ba-Cu-B-O type and a process for manufacturing such a metallic oxide. The above metallic oxide has a composition expressed by the following formula (I):(Ln.sub.1-a Ca.sub.a)(Sr.sub.2-b Ba.sub.b)(Cu.sub.3-c B.sub.c)O.sub.d(I)wherein Ln is one or more kinds of elements selected from the group consisting of Y and lanthanoid elements except for Ce and Tb and wherein the following conditions are met: 0.1.ltoreq.a.ltoreq.0.5, 0.7.ltoreq.b.ltoreq.1.7, 0.1.ltoreq.c.ltoreq.0.5, and 6.5.ltoreq.d.ltoreq.7.5. A process for manufacturing the metallic oxide has the following steps. A mixture of materials including H.sub.3 BO.sub.3 used as a starting material of B is prepared. The resultant mixture is heated at a rate of 5.degree. C. or lower per minute up to 900.degree. C. or lower. Then, it is heated in an oxygen atmosphere at a range from 900.degree.-1050.degree. C.

Abstract: The disclosed substance has a composition of a general chemical formula ofBi.sub.2 -(Sr.sub.2 Ca.sub.1).sub.1-x (La.sub.2 Y.sub.1).sub.x -Cu.sub.y -O.sub.z,where 0.4.ltoreq.x.ltoreq.1, y=2 and z=9-10.5, wherein said substance is an insulator or a semiconductor in the dark, and has a photoconductivity Q(.lambda.,T) in conjugate with superconductivity of a superconductor of an adjacent component of the Bi-SrCa-LaY-Cu-O system at and below a critical temperature (T) of less than 105-115K and below 65-85K at photoexcitation in an optical wavelength range (.lambda.) of 420-670 nm. The present invention relates to a method for producing the same and a superconductive optoelectronic device by using the same. The present invention also relates to an organized integration of the element or device into an apparatus to further develop a new field of "Superconductive Optoelectronics.

Abstract: A method of producing a microcrystalline RBa.sub.2 Cu.sub.3 O.sub.y structure where R denotes a lanthanide chosen from Y, La, Nd, Sm, Eu, Gd, Tb, Ho, Er, Tm, Yb and Lu and where y has a value between 6.9 and 7 starts with a powder of composition [x(123) ; (1-x) (7BaO--18CuO] where (123) denotes the 123 phase of RBaB.sub.2 Cu.sub.3 O.sub.y and where the value of x is between 0.01 and 1. The powder is compressed and sintered at a temperature below 920.degree. C. (the BaCuO.sub.2 and CuO binary eutectic temperature) to form a sample. The sample is placed on an oxide of the lanthanide R. The sample and its support undergo heat treatment enabling chemical reaction between the liquid part of the sample and its support whereby substantially all of the liquid part is consumed and highly regular 123 monocrystals are obtained. Cooling is applied. At least one annealing is carried out in pure oxygen at a temperature between 350.degree. C. and 500.degree. C. to obtain the orthorhombic form characteristic of RBa.sub.2 Cu.

Abstract: A high temperature superconducting material with the general formula GaSr.sub.2 Ln.sub.1-x MxCu.sub.2 O.sub.7.+-.w wherein Ln is selected from the group consisting of La, Ce, Pt, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Y and M is selected from the group consisting of Ca and Sr, 0.2.ltoreq.x.ltoreq.0.4 and w is a small fraction of one. A method of preparing this high temperature superconducting material is provided which includes heating and cooling a mixture to produce a crystalline material which is subsequently fired, ground and annealed at high pressure and temperature in oxygen to establish superconductivity.

Abstract: Provided is an oxide superconductor in which superconducting layer is sandwiched between two blocking layers having different compositions. Available superconducting layers include a one-layer system having one Cu-O.sub.2 sheet, a two-layer system having a mediating layer sandwiched between two Cu-O.sub.2 sheets, and a three-layer system having mediating layers sandwiched individually between three Cu-O.sub.2 sheets.Since the blocking layers are of different compositions, seventy-seven kinds of oxide superconductors can be obtained.

Abstract: The disclosed superconductive material has a characteristic in accordance with which electrical resistance disappears at a temperature of at least more than the boiling point of 20.3.degree. K. (-252.7.degree. C.) of liquid hydrogen and relates to La-Ba-Cu-O series superconductive material.Said superconductive material consists essentially of a composition having the formula(La.sub.1-x M.sub.x).sub.2 CuO.sub.4-x/2wherein, M=Ba or Ba(Sr, Ca) and x=0.04.about.0.20 as a main body, wherein the material has a K.sub.2 NiF.sub.4 crystal structure.

Abstract: The disclosed substance has a general chemical formula of La.sub.2 -Cu.sub.1 -O.sub.z, z being 3.84 to 4.00. The disclosed substance shows, at a temperature below 20.degree. K., superconductivity, either potential or real, and the substance also shows, at a temperature below 30.degree. K., superconductive photoconductivity in response to incident exciting light in a wavelength range of 420 to 640 nm. The substance is produced by heating a mixture of starting material therefor at 900.degree.-1,050.degree. C. for 5-10 hours to cause solid state reaction, cooling gradually, shaping under pressure, re-sintering at 700.degree.-1,200.degree. C., and cooling either quickly at a rate of 2,000.degree.-900.degree. C./sec or slowly at a rate of 150.degree.-200.degree. C./hour.