Abstract: The present invention relates to a method for producing a phase-separated layer useful as a flux pinning substrate for a superconducting film, wherein the method includes subjecting at least a first and a second target material to a sputtering deposition technique in order that a phase-separated layer is deposited epitaxially on a primary substrate containing an ordered surface layer. The invention is also directed to a method for producing a superconducting tape containing pinning defects therein by depositing a superconducting film on a phase-separated layer produced by the method described above.

Abstract: A superconductor comprising a compound of the formula (II):R.sub.1+x Ba.sub.2-x Cu.sub.3 O.sub.7-y1 (II)wherein not less than 40% of a crystal of the superconductor shows phase separation, and at (temperature, magnetic field) of (77?K!, O?T!) and (77?K!, 4?T!), a critical current density is not less than 10,000 A/cm.sup.2, which is obtained by heating a precursor which is a solid solution of the formula (I):R.sub.1+x Ba.sub.2-x Cu.sub.3 O.sub.7-y (I)wherein not more than 10% of a crystal of the solid solution shows phase separation, so that phase separation is formed in the crystals at a phase separation temperature, and introducing oxygen; and a superconductor comprising a compound of the formula (II):R.sub.1+x Ba.sub.2-x Cu.sub.3 O.sub.7-y1 (II)wherein not more than 10% of a crystal of the superconductor shows phase separation, and in a magnetic field of not less than 1?T! at a constant temperature of 77?K!, a critical current density is less than 10,000 A/cm.sup.

Abstract: A stabilized carbon cluster conducting material comprising (i) a core comprising a conducting or superconducting carbon cluster and (ii) a sheath covering the core; a device comprising a substrate having thereon a film of a conducting or superconducting carbon cluster covered with a protective film capable of substantially preventing permeation of oxygen and water in the atmosphere; and processes for producing the stabilized carbon cluster conducting material and the device.

Abstract: A method of growing an epitaxial like, single crystal, superconducting film by promoting the epitaxial-like growth of film from a single nucleation site in deference to substantially all other nucleation sites on the substrate. The present invention contemplates the use of a mask to systematically expose sections of the substrate to the deposition apparatus. This mask may include an adjustable or fixed aperture and is manipulated as herein described to systematically expose areas of the substrate to the deposition apparatus.

Abstract: A method of preparing a superconducting oxide by combining the metallic elements of the oxide to form an alloy, followed by oxidation of the alloy to form the oxide. Superconducting oxide-metal composites are prepared in which a noble metal phase intimately mixed with the oxide phase results in improved mechanical properties. The superconducting oxides and oxide-metal composites are provided in a variety of useful forms.

Abstract: A method of fabricating a superconducting quantum interference device (DC-SQUID) constructed from short weak links with untrafine wires. The method comprises the following steps: successive forming a niobium nitride film and a silicon nitride film on a substrate; oblique etching of the niobium nitride film and said silicon nitride film with respect to the substrate by a reactive ion etching process using a mixture of oxygen and CF.sub.4 gases to form an olique edge; and successive forming a barrier thin film and a counterelectrode of niobium on the said edge. The short weak links wire fabricated by field evaporation technique. The counterelectrode material were field-evaporated and formed the conductive paths in the pinholes in the insulating thin film.

Abstract: The generation of a reaction product is suppressed between a metallic substrate and plasma in depositing a ceramic intermediate layer on the metallic substrate in a process for depositing an oxide film on the metallic substrate by thermal plasma flash evaporation method. Thus, there is no reaction phase in the ceramic intermediate layer and the metallic substrate, and an intermediated buffer layer of only oxide ceramic is deposited on a flat surface of the metallic substrate. The intermediate ceramic layer is deposited in inert atmosphere of a low oxygen concentration at a temperature of less than 600.degree. C. for the metallic substrate. Then, a superconducting thin film is deposited on the ceramic intermediate layer.

Abstract: A thin film superconductor assembly is disclosed along with a method of fabricating same. The assembly comprises a self-supporting substrate defining at least a portion of a containment for a flow of cryogenic fluid, a dielectric layer adherent to a surface of the substrate, a thin film superconductor adherent to the dielectric layer and a moisture and oxygen impervious electrically insulating coating covering the thin film superconductor. A method of forming such thin film superconductor assembly, wherein the dielectric layer consists essentially of aluminum nitride, comprises growing the aluminum nitride dielectric layer integrally on the surface of the substrate.

Abstract: A method of growing KTa.sub.x Nb.sub.1-x O.sub.3 by pulsed laser evaporation. In order to compensate for the volatile K, two targets are prepared, one of sintered oxide powder having K, Ta, and Nb in amounts stoichiometric to KTa.sub.x Nb.sub.1-x O.sub.3 and the other of melt-grown KNO.sub.3. The method can also be used to form other complex materials having volatile components using a variety of sputtering growth techniques. The two targets are mounted on a rotating target holder and are alternately ablated by the laser beam. The KNO.sub.3 provides excess K, thus allowing the growth of a stoichiometric film. The method can be applied to many complex materials for which some of the components are volatile.

Abstract: In a process for preparing a thin film of oxide superconductor having a layered crystal structure by depositing each layer of said layered crystal structure on a substrate by Molecular Beam Epitaxy (MBE) method with introducing oxygen-containing gas which is exited by irradiation of microwave, improvement in that a film-forming operation by the MBE method is interrupted temporally after predetermined numbers of constituent layers which correspond to one unit crystal or less than one unit crystal are layered so that the deposited constituent layers are left in an activated oxygen atmosphere to effect a crystallization promotive operation, before next film-forming operation is restarted.

Abstract: An improved method of manufacturing superconducting ceramics in the form of a thin film are described. The thin film is first formed of a superimposed structure composed of three films which contain a rare earth metal, an alkaline metal and copper respectively. Then the superimposed thin film is fired to convert to superconducting film.

Abstract: A superconducting film is formed by a physical vapor deposition. In order to form such a superconducting film as exhibits a sufficient superconductivity a small portion of a target is sublimed without decomposing molecules of the target and deposited on a surface of a substrate. In addition an undesirable component is not introduced from the target into the superconducting film.

Abstract: This invention relates to a process for producing a superconducting thin film, characterized in that a target made of a compound oxide containing Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu is used for carrying out physical vapor deposition to produce a thin film of perovskite type oxide or quasi-perovskite type oxide. The target may be made of preliminary sintered material which is obtained by preliminary sintering of a powder mixture including oxides, carbonates, nitrates or sulfates of Ba; one element M selected from a group consisting of Y, La, Gd, Ho Er and Yb; and Cu, or of finally sintered material which is obtained by a final sintering of preliminary sintered material at a temperature ranging from 700.degree. to 1,500.degree. C., preferably from 700.degree. to 1,300.degree. C. The physical vapor deposition is performed by high-frequency sputtering technique under Ar and O.sub.2 containing atmosphere, at a partial pressure of Ar ranging from 1.0.times.10.sup.

Abstract: This is a process for fabrication of nickel-oxide insulation on a superconductor. The process utilizes; reacting oxygen-free nickel powder with oxygen-free carbon monoxide generally at 50.degree.-75.degree. C. to produce a nickel carbonyl, separating the nickel carbonyl from reaction by-products and excess reagents by cooling the carbonyl and decanting the nickel carbonyl liquor, and contacting the carbonyl to a surface of a wire containing superconductor or superconductor precursors in an atmosphere containing a controlled amount of oxygen, with the wire at 50.degree.-800.degree. C. to produce nickel suboxide insulation on the wire. The purified nickel carbonyl and oxygen may be alternately (rather than simultaneously) introduced, to deposit a series of metallic nickel films on the wire, each of which metallic films are then oxidized to a nickel suboxide.

Abstract: A method of manufacturing Josephson junctions includes steps of high Tc superconductor thin films on a substrates by chemical vapor deposition using raw materials, which includes at least yttrium, barium and copper, serving as vapor generating sources, and fabricating the high Tc superconductor thin films into micro-bridges to produce Josephson junctions.

Abstract: A method of producing a superconducting circuit by forming a film having a superconducting phase on a substrate and applying a laser beam to a part of the superconducting phase to cause transition of the part of the superconducting phase into a non-superconducting phase.

Abstract: The quality of superconducting cavity resonators depends to a very great extent on the surface quality of the cavities. The invention relates to a process for the manufacture of superconducting cavity resonators with improved surface quality, whereby even complex shaped cavity resonators can be made with cavities coated with NbN.

Abstract: The invention relates to volatile mixed metal alkoxides of the formula M'.sub.x M.sub.y Cu.sub.z (OR).sub.x+2(y+z) wherein M is selected from the group consisting of Ba, Sr, and Ca, M' is an alkali metal, x=0-6, y=0-4 and z=1 to 6, and x and y are not 0 at the same time, and R is selected from the group consisting of CMe.sub.3, CMe.sub.2 Et, CMeEt.sub.2, CMe.sub.2 Pr, CMeEtPr, CEt.sub.3 or combinations of these substituents. Volatile alkoxides of Y and Cu are known. These volatile alkoxides can be used in a CVD process where stoichiometric quantities of the material are sublimated, transported to a substrate and decomposed to an oxide with or without the presence of oxygen. The oxides are then treated in a known manner to produce the superconducting film.