Abstract: The invention relates to a method for producing a high temperature superconductor (HTSC) from a strip including an upper side precursor layer and which, for continuous sintering of the precursor layer within a furnace in the presence of a fed-in reaction gas, is drawn across a support. A furnace for performing the method is also described.

Abstract: A device for fabricating thin films on a substrate includes a vacuum chamber, a rotatable platen configured to hold one or more substrates within the vacuum chamber, and a housing disposed within the vacuum chamber. The housing contains a heating element and is configured to enclose an upper surface of the platen and a lower portion configured to partially enclose an underside surface of the platen which forms a reaction zone. A heated evaporation cell is operatively coupled to the lower portion of the housing and configured to deliver a pressurized metallic reactant to the reaction zone. The device includes a deposition zone disposed in the vacuum chamber and isolated from the reaction zone and is configured to deposit a deposition species to the exposed underside of the substrates when the substrates are not contained in the reaction zone.

Abstract: An apparatus for forming a multicomponent thin film, such as a superconducting thin film, on a substrate includes a holder for holding at least one substrate and a deposition/reaction vessel. The deposition/reaction vessel has at least three zones, each zone being separated from adjacent zones by a wall. The zones include at least two deposition zones, where each deposition zone is configured and arranged to deposit a deposition material on the at least one substrate, and at least one reaction zone for reacting the deposition material with a reactant. The apparatus is configured and arranged to rotate the at least one substrate sequentially through the plurality of zones to form a thin film on the substrate. In some embodiments of the apparatus, the deposition/reaction vessel includes a same number of deposition zones and reaction zones which may be alternating deposition and reaction zones.

Abstract: The present invention provides methods forming the superconductor of as-grown film of MgB2 which is made with magnesium and boron ejected from a magnesium target and a boron target respectively each in simultaneously sputtering process. The as-grown film composed of a compound of magnesium and boron is a superconductor without annealed. The present invention can be applied to fabricate an integrated circuit of superconductor film, because the high temperature annealing process for the as-grown film of MgB2 is not needed.

Abstract: An apparatus for forming a multicomponent thin film, such as a superconducting thin film, on a substrate includes a holder for holding at least one substrate and a deposition/reaction vessel. The deposition/reaction vessel has at least three zones, each zone being separated from adjacent zones by a wall. The zones include at least two deposition zones, where each deposition zone is configured and arranged to deposit a deposition material on the at least one substrate, and at least one reaction zone for reacting the deposition material with a reactant. The apparatus is configured and arranged to rotate the at least one substrate sequentially through the plurality of zones to form a thin film on the substrate. In some embodiments of the apparatus, the deposition/reaction vessel includes a same number of deposition zones and reaction zones which may be alternating deposition and reaction zones.

Abstract: A high-temperature YBa.sub.2 Cu.sub.3 O.sub.x superconducting sintered body is produced through wet grain-coating process in which starting grains are soaked in SnI.sub.4 solution, pressed after the removal of solvent and then sintered at a given temperature, and has a critical current density of at least 500 A/cm.sup.2 at 77 K.

Abstract: A method and apparatus are disclosed for generating fine mists of liquids using a rotating turbine blade disposed within an enclosure. A mixture of a liquid and a carrier gas are flowed into the enclosure such that it immediately impacts on the rotating turbine blade disposed near a lower end of the enclosure, and the resulting mist is withdrawn under vacuum near an upper end of the enclosure. A method and apparatus are also disclosed for chemical vapor deposition of thin films of complex chemical compounds using the discussed mists.

Abstract: An electrical conductor particularly suited for use as a downlead to low temperature devices includes a ceramic honeycomb body having longitudinal channels wherein films of substantially single crystals of a ceramic superconductor are grown. The maximum current carrying capacity of the ceramic superconductor may be oriented parallel to the channels. Square channels arranged in alternating rows of oppositely directed current provide desirable magnetic field cancellations and permit high current flows. A method for making the electrical conductor and a method of extruding the ceramic honeycomb body are also disclosed.

Abstract: Magnetic head including a core (1, 3) of soft magnetic material having a contact face (7) and a winding aperture (5) and a coil (14) wound around the core. A layer (13) of a superconducting material is present in the non-magnetic transducing gap (11) in the core and a layer (15) of a superconducting material is provided on at least a plurality of the outer faces, for example the side faces (17).

Abstract: An apparatus for the continuous manufacture of high temperature superconducting wires is disclosed. A core on which the superconductive ceramic substance is caused to directionally solidify from the melt is drawn through the melt in such a manner as to obtain an oriented microstructure conductive to high critical current carrying capacity. This also produces a macrostructure with appropriate mechanical strength and flexibility independently of the superconducting substance chosen.

Abstract: A process is disclosed of producing on a crystalline silicon substrate a barrier layer triad capable of protecting a rare earth alkaline earth copper oxide conductive coating from direct interaction with the substrate. A silica layer of at least 2000 .ANG. in thickness is deposited on the silicon substrate, and followed by deposition on the silica layer of a Group 4 heavy metal to form a layer having a thickness in the range of from 1500 to 3000 .ANG.. Heating the layers in the absence of a reactive atmosphere to permit oxygen migration from the silica layer forms a barrier layer triad consisting of a silica first triad layer located adjacent the silicon substrate, a heavy Group 4 metal oxide third triad layer remote from the silicon substrate, and a Group 4 heavy metal silicide second triad layer interposed between the first and third triad layers.

Abstract: A ceramic type superconductive layer (2) is formed on the outer peripheral surface of an optical fiber (1), and a stabilizing layer (3) is formed so that it contacts the outer peripheral surface of the superconductive layer (3). The diameter of the optical fiber is, for example, not more tha 100 .mu.m. The superconductive layer may be formed with a spirally extending groove (7) which divides the superconductive layer.

Abstract: Microwave oscillators and amplifiers which utilize a superconducting slow-wave circuit. The slow circuit is made from materials which exhibit superconductivity at relatively high critical temperatures. The slow wave circuit is integral with the device's vacuum housing. Coolant exterior to the vacuum housing maintains the circuit in the superconducting state. The slow-wave circuit, which protrudes into the vacuum housing provides modulation of an electron beam which traverses the interior of the vacuum housing. Output power is ultimately extracted from the slow wave circuit.