Abstract: A method for preparing photoactive perovskite materials. The method comprises the steps of: introducing a lead halide and a first solvent to a first vessel and contacting the lead halide with the first solvent to dissolve the lead halide to form a lead halide solution, introducing a Group 1 metal halide a second solvent into a second vessel and contacting the Group 1 metal halide with the second solvent to dissolve the Group 1 metal halide to form a Group 1 metal halide solution, and contacting the lead halide solution with the Group 1 metal halide solution to form a thin-film precursor ink. The method further comprises depositing the thin-film precursor ink onto a substrate, drying the thin-film precursor ink to form a thin film, annealing the thin film; and rinsing the thin film with a salt solution.

Abstract: A method for preparing photoactive perovskite materials. The method comprises the steps of: introducing a lead halide and a first solvent to a first vessel and contacting the lead halide with the first solvent to dissolve the lead halide to form a lead halide solution, introducing a Group 1 metal halide a second solvent into a second vessel and contacting the Group 1 metal halide with the second solvent to dissolve the Group 1 metal halide to form a Group 1 metal halide solution, and contacting the lead halide solution with the Group 1 metal halide solution to form a thin-film precursor ink. The method further comprises depositing the thin-film precursor ink onto a substrate, drying the thin-film precursor ink to form a thin film, annealing the thin film; and rinsing the thin film with a salt solution.

Abstract: Disclosed are Niobium Nitride film forming compositions, methods of synthesizing the same, and methods of forming Niobium Nitride films on one or more substrates via vapor deposition processes using the Niobium Nitride film forming precursors.

Abstract: Titanium-containing film forming compositions are disclosed as well as methods of synthesizing the same and methods of forming Titanium-containing films on substrates via vapor deposition processes using the Titanium-containing film forming compositions. The Titanium-containing film forming compositions comprise a precursor having the formula Ti(R5Cp)2(L), wherein each R is independently H, an alkyl group, or R?3Si, with each R? independently being H or an alkyl group; L is selected from the group consisting of formamidinates (NR,R?-fmd) or amidinates (NR,R?R?-amd).

Abstract: A precursor for the deposition of a thin film by atomic layer deposition is provided. The compound has the formula MxLy where M is a metal and L is an amidrazone-derived ligand or an amidate-derived ligand. A process of forming a thin film using the precursors is also provided.

Abstract: The present invention describes metal salen complexes having dianionic counterions. Such complexes can be readily precipitated and provide an economical method for the purification and isolation of the complexes, and are useful to prepare novel polymer compositions.

Abstract: The present invention relates to the use of hydrazone compounds and copper for controlling the growth of fungi.

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract: A vanadium phthalocyanine compound with low absorptivity in the visible light region and high absorptivity in the near-infrared light region, and represented by the following Formula:

Abstract: Provided herein are methods of treating a subject with a mycobacterial infection. The methods comprise administering to the subject a Cu+/++ boosting therapeutic. Also provided are compositions comprising a Cu+/++ boosting therapeutic. Further provided are methods of screening for a Cu+/++ boosting therapeutic.

Abstract: Disclosed are nickel allyl amidinate precursors having the formula: wherein each of R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from H; a C1-C4 linear, branched, or cyclic alkyl group, a C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or tris alkyl); a C1-C4 linear, branched, or cyclic alkylamino group; or a C1-C4 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit nickel-containing films on one or more substrates via a vapor deposition process.

Abstract: A new system accomplishes easy, interchangeable production of multiple PET radiopharmaceuticals through the use of a simplified eluant-only generator and a kit based synthesis technique employing lyophilized or freeze dried ligand. Thus, by simply switching the lyophilized ligand vial kit, any number of 62Cu-labeled radiopharmaceuticals (62Cu-ligand) can be interchangeably synthesized with only one 62Zn/62Cu generator.

Abstract: A metal complex of formula (III) wherein: M is a transition metal and A1, A2, X, X?, Y, L1?, R1? and R2? are as defined herein, is useful in medical imaging and therapy.

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract: Methods for forming heteroleptic amidinate or guanidinate cyclopentadienyl containing transition metal precursors through synthesis reactions.

Abstract: The present invention relates to the use of hydrazone compounds and copper for controlling the growth of fungi.

Abstract: The present invention relates to the use of hydrazone compounds and copper for controlling the growth of fungi.

Abstract: A precursor for the deposition of a thin film by atomic layer deposition is provided. The compound has the formula MxLy where M is a metal and L is an amidrazone-derived ligand or an amidate-derived ligand. A process of forming a thin film using the precursors is also provided.

Abstract: The present invention relates to the use of hydrazone compounds and copper for controlling the growth of fungi.

Abstract: Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2}2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.

Abstract: A novel vanadium phthalocyanine compound with low absorptivity in the visible light region and high absorptivity in the near-infrared light region, and a near-infrared absorption filter using the same are disclosed. The near-infrared absorption vanadium phthalocyanine compound is represented by Formula 1 of claim 1. In Formula 1, A2, A3, A6, A7, A10, A11, A14 and A15 are independently OR1, SR2 or a halogen atom, wherein at least four thereof are OR1; A1, A4, A5, A8, A9, A12, A13 and A16 are independently OR1, SR2, NR3R4 or a halogen atom, wherein at least one thereof is NR3R4, and at least four thereof are OR1; R1, R2, R3 and R4 are independently an alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, or an aralkyl group of 7 to 15 carbon atoms.

Abstract: Cobaloxime derivatives and methods of producing cobaloxime derivatives are disclosed herein. Methods of producing decolorized homo- and co-polymers through polymerization of monomers in presence of the cobaloxime derivatives and decolorization of the produced polymer by exposing the polymer to a sorbent and, optionally, a solvent are also disclosed herein.

Abstract: A compound according to the present invention is represented by the general formula (1). This makes it possible to provide (i) a novel compound that exhibits a practically sufficient light-emitting property not only in a case where the novel compound is used as a luminescent dopant, but also in a case where the novel compound is used solely, and (ii) use of the novel compound.

Abstract: A method of preparing an ultra-pure metal amidinate compound comprising using a microchannel device for synthesis in reacting a metal halide solution with a lithium amidinate solution to produce an ultra-pure alkylmetal compound for processes such as chemical vapor deposition.

Abstract: A metal complex of formula (III) wherein: M is a transition metal and A1, A2, X, X?, Y, L1?, R1? and R2? are as defined herein, is useful in medical imaging and therapy.

Abstract: The present invention relates to the use of selected metal complex compounds and ligands as oxidation catalysts as well as to a process for removing stains and soil on textiles and hard surfaces. The metal complex compounds have hydrazide ligands preferably with electron withdrawing groups in the phenyl ring adjacent to the acyl group. Further aspects of the invention are formulations comprising such metal complex compounds, novel metal complex compounds and novel ligands.

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract: This invention relates to processes for the production of organometallic compounds represented by the formula M(L)3 wherein M is a Group VIII metal, e.g., ruthenium, and L is the same or different and represents a substituted or unsubstituted amidinato group or a substituted or unsubstituted amidinato-like group, which process comprises (i) reacting a substituted or unsubstituted metal source compound, e.g., ruthenium (II) compound, with a substituted or unsubstituted amidinate or amidinate-like compound in the presence of a solvent and under reaction conditions sufficient to produce a reaction mixture comprising said organometallic compound, e.g., ruthenium (III) compound, and (ii) separating said organometallic compound from said reaction mixture. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Abstract: A method of preparing an ultra-pure metal amidinate compound comprising using a microchannel device for synthesis in reacting a metal halide solution with a lithium amidinate solution to produce an ultra-pure alkylmetal compound for processes such as chemical vapor deposition.

Abstract: A method of preparing an ultra-pure metal amidinate compound comprising using a microchannel device for synthesis in reacting a metal halide solution with a lithium amidinate solution to produce an ultra-pure alkylmetal compound for processes such as chemical vapor deposition.

Abstract: A flame retardant which comprises an inorganic hydroxide and a carbodiimide-group-containing organic layer chemically bonded to the surface of the inorganic hydroxide. Examples of the carbodiimide-group-containing organic layer include a layer comprising a carbodiimide-group-containing compound represented by either of the following formulae. Due to the constitution, the flame retardant can be highly dispersed in a resin even when added in a high proportion and can give a molding inhibited from deteriorating in electrical properties, mechanical properties, etc. (X1)m-Z-[A-(R1—N?C?N)n—R1—NCO]1??(1) (X1)m-Z-[A-(R1—N?C?N)n—R1-A-Z-(X2)3])3??(2) [R1 represents a residue of an isocyanate compound; X1 and X2 each independently represents hydrogen, halogeno, etc.

Abstract: A new class of fluorinated or polyhalogenated triazepentadienes are disclosed. The synthesized triazapentadienes are thermally stable, soluble in typical solvents and have several metal binding sites for complexation with metal ions. The compounds are prepared as colorless crystalline solids. Synthesis takes advantage of a reaction with triethylamine. Synthesized triazapentadienes (with and without complexed metals) inhibit bacterial growth of both Gram positive and Gram-negative bacteria.

Abstract: A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] Mp(NR4R5)q(3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R1 and R3 each represents C1-6 alkyl, etc.; R2 represents C1-6 alkyl, etc.; R4 and R5 each represents C1-4 alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases.

Abstract: Methods for forming heteroleptic amidinate or guanidinate cyclopentadienyl containing transition metal precursors through synthesis reactions.

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract: The invention provides antioxidant salen-metal complexes, compositions of such antioxidant salen-metal complexes having superoxide activity, catalase activity, and/or peroxidase activity, compositions of salen-metal complexes in a form suitable for pharmaceutical administration to treat or prevent a disease associated with cell or tissue damage produced by free radicals such as superoxide, and cosmetic and free radical quenching formulations of salen metal compounds.

Abstract: The present invention provides metal-containing compounds that include at least one ?-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical ?-diketiminate ligands. In other embodiments, the metal-containing compounds are heteroleptic complexes including at least one ?-diketiminate ligand. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for ?-diketiminate ligands are also provided.

Abstract: Copper (I) amidinate and copper (I) guanidinate precursors for forming copper thin films in the manufacture of microelectronic device articles, e.g., using chemical vapor deposition, atomic layer deposition, and rapid vapor deposition processes, as well as mixed ligand copper complexes suitable for such processes. Also described are solvent/additive compositions for copper precursors for CVD/ALD of copper metal films, which are highly advantageous for liquid delivery of such copper amidinates and copper guanidinates, as well as for other organocopper precursor compounds and complexes, e.g., copper isoureate complexes.

Abstract: A new class of fluorinated or polyhalogenated triazapentadienes are disclosed. The synthesized triazapentadienes are thermally stable, soluble in typical solvents and have several metal binding sites for complexation with metal ions. The compounds are prepared as colorless crystalline solids. Synthesis takes advantage of a reaction with triethylamine. Synthesized triazapentadienes (with and without complexed metals) inhibit bacterial growth of both Gram positive and Gram-negative bacteria.

Abstract: The present invention relates to a transition metal complex represented by the formula (I): wherein M represents a Group 4 transition metal; —Y— represents (a): —C(R1)(R20)-A-, (b): —C(R1)(R20)-A1(R30)—, (c): —C(R1)=A1-, or (d): —C(R1)=A1-A2-R30; A represents a Group 16 element and A1 and A2 each represents a Group 15 element; R1 to R9, R20, and R30 are the same or different and each represents an optionally substituted hydrocarbon group, etc.; and X1 and X2 are the same or different and each represents a hydrogen atom, a halogen atom, an optionally substituted C1-10 alkyl group, etc., and an intermediate product thereof, and a catalyst for olefin polymerization which comprises said transition metal complex as a component.

Abstract: The invention relates to a process for the preparation of a polymer comprising at least one aliphatic or aromatic hydrocarbyl C2-20 olefin in the presence of an ionic catalyst comprising an organometallic compound and an activator, and optionally a scavenger, characterized in that the organometallic compound is a compound according to formula (1): where: M is a metal of group 3, 4, 5, 6 or 7, or the lanthanide series, and p is the valency of the metal M, A represents a neutral or anionic spectator ligand whose valency v is 0, 1 or 2, and q is an integer denoting the number of spectator ligands A, Z is an optional bridging moiety, n is the integer number of parallel bridging moieties Z, Y is an amidine-containing spectator ligand represented by formula (2): wherein the amidine-containing ligand is covalently bonded to the metal M via the imine nitrogen atom, Sub1 is a substituent, which comprises a group 14 atom through which Sub1 is bonded to the imine carbon atom.

Abstract: Methods and compositions for depositing metal films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising gold, silver, or copper. More specifically, the disclosed precursor compounds utilize pentadienyl ligands coupled to a metal to increase thermal stability. Furthermore, methods of depositing copper, gold, or silver are disclosed in conjunction with use of other precursors to deposit metal films. The methods and compositions may be used in a variety of deposition processes.

Abstract: The present invention provides metal-containing compounds that include at least one ?-diketiminate ligand, and methods of making and using the same. In certain embodiments, the metal-containing compounds include at least one ?-diketiminate ligand with at least one fluorine-containing organic group as a substituent. In other certain embodiments, the metal-containing compounds include at least one ?-diketiminate ligand with at least one aliphatic group as a substituent selected to have greater degrees of freedom than the corresponding substituent in the ?-diketiminate ligands of certain metal-containing compounds known in the art. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for ?-diketiminate ligands are also provided.

Abstract: An interconnect structure for integrated circuits incorporates a layer of cobalt nitride that facilitates the nucleation, growth and adhesion of copper wires. The cobalt nitride may deposited on a refractory metal nitride or carbide layer, such as tungsten nitride or tantalum nitride, that serves as a diffusion barrier for copper and also increases the adhesion between the cobalt nitride and the underlying insulator. The cobalt nitride may be formed by chemical vapor deposition from a novel cobalt amidinate precursor. Copper layers deposited on the cobalt nitride show high electrical conductivity and can serve as seed layers for electrochemical deposition of copper conductors for microelectronics.

Abstract: A transition metal ligand complex has the following formula: wherein R1 and R2 (each occurrence) independently represent an aryl, alkyl, or cycloalkyl group having up to 20 carbon atoms; R3 and R4 (each occurrence) independently represent an aryl, alkyl, or cycloalkyl group having up to 20 carbon atoms; R5 represents an aryl, alkyl, or cycloalkyl group having up to 20 carbon atoms, provided that R4 and R5 may be joined to form a cyclic structure; R6 represents an alkyl or aryl group having up to 20 carbon atoms; and Mt represents a transition metal selected from Group 7, 8, 9, 10, 11, or 12 of the Periodic Table of the Elements.

Abstract: A composition having the formula I where R1 and R2 are independently hydrogen, C1 to C12 linear and branched alkyl, C3 to C12 cycloalkyl, aryl, C1 to C12 alkoxy, F, Cl, SO3, C1 to C12 perfluoroalkyl, and N(CH3)2, R3 is independently selected from the group consisting of hydrogen, C1 to C12 linear and branched alkyl, C3 to C12 cycloalkyl, aryl, and 2,2,2-trifluoroethyl, A is —C(R4)—, —(CH2)x—, —(CH2)xNH(CH2)x—, or —CY2CY2—, where R4 is a hydrocarbyl, halosubstituted hydrocarbyl, or alkoxy group of from 1 to 12 carbon atoms, x is an integer from 1 to 12, and Y is halogen, and X is halogen, triflate, acetate, trifluoroacetate, hydride, or tetrafluoroborate. When combined with an activating co-catalyst is useful in polymerizing olefinic monomers.

Abstract: An object of the invention is to provide an organic EL element which uses an organometallic complex emitting light by phosphorescence and which represents excellent luminous efficiency, etc; or the like. The organic EL element of the invention includes the organometallic complex, where the organometallic complex includes a metal atom, and a tridentate ligand, where the tridentate ligand binds to the metal atom tridentately via two nitrogen atoms and a carbon atom, and the carbon atom is located between the two nitrogen atoms, and where the tridentate ligand has two azomethine bonds (—C?N—), and each nitrogen atom in the azomethine bonds coordinates to the metal atom. Preferably, in one aspect, the organometallic complex includes a monodentate ligand which binds to the metal atom monodentately, and in another aspect, the metal atom is Pt.

Abstract: A catalytic composition, including a cationic metal-pair complex, is disclosed, along with a method for its preparation. A method for the polymerization of ethylenically unsaturated monomers using the catalytic composition, and the addition polymers produced thereby are also disclosed.

Abstract: Certain complexes containing ligands having a phosphino group, amino group or an imino group, and a second functional group such as amide, ester or ketone, when complexed to transition metals, catalyze the (co)polymerization of olefinic compounds such as ethylene, ?-olefins and/or acrylates. A newly recognized class of ligands for making copolymer containing polar monomers using late transition metal complexes is described.

Abstract: Olefins, such as ethylene, are polymerized using as a polymerization catalyst a complex of a selected transition metal with a monoanionic ligand that has at least three atoms that may coordinate to the transition metal. Also disclosed are the above selected transition metal complexes, and intermediates thereto.