Abstract: A glass-moulded type semiconductor device comprising semiconductor arrangement composed of at least one semiconductor pellet having at least one P-N junction, edges of which are exposed to peripheral surfaces of the semiconductor pellet, a pair of electrodes secured to opposite ends of the semiconductor arrangement through a brazing material, a first mould glass layer secured to the entire circumferential surface of the semiconductor arrangement and extending to the surfaces of the electrodes for passivating the P-N junction of the semiconductor arrangement, and a second mould glass in the form of at least one layer secured to the surface of said first mould glass layer.

Abstract: A mesh electrode for a c.r.t. display device consists of a number of coplanar portions of mesh insulated from each other, and secured to a support plate by means of two layers of refractory compound. The first layer is applied to the support plate and allowed to set before the second layer is applied so as to space the mesh portions from the support plate by at least the thickness of the first layer.

Abstract: A process for welding two glass members together to form a weld bead through which connecting wires extend. The glass members are first brought into intimate contact with metal parts which can be heated by a high frequency current. The glass members are held close to one another with the wires disposed in the space between them, and the glass is then melted until it welds by heating the metal parts with the aid of high-frequency heating coil windings surrounding the metal parts.