Abstract: A method for determining usability of a cover material as a cover of a vehicle seat component includes determining a fabric stretch requirement for the vehicle seat component; determining actual fabric stretch of the cover material; and comparing the actual fabric stretch with the fabric stretch requirement to determine whether the cover material is satisfactory for use with the vehicle seat component as the cover.

Abstract: An insulated strain gage including a layer of semiconductive material and a layer of insulating material, where a side of the first insulating layer is disposed adjacent to a side of the semiconductive layer. A method of manufacturing the insulated strain gage includes the steps of forming an insulating layer of insulating material, and depositing a semiconductive layer of semiconductive material on top of the first insulating layer. The bottom side of the semiconductive layer is adjacent to a top side of the insulating layer. The insulated strain gage may be part of an apparatus for measuring strain on an object. The apparatus measures the strain on an object by translating deformations of the object resulting from an applied force into electrical signals. The apparatus includes a sensor, a insulated strain gage, and a circuit. The insulated strain gage includes an insulating layer and is bonded to the mechanical sensor by an adhesive.

Abstract: A micromachined strain sensor can be incorporated in a sealed package with other microelectrical and micromechanical components, with the residual strain being monitored electronically from outside the package to allow strain to be monitored during production and during the life of the component. The strain sensor includes at least one microstructural beam member anchored to a substrate at one position and having a portion which is freed from the substrate during formation to displace as a result of the strain in the beam member. At least one electrically conductive displaceable tine is connected to the beam member to be displaced as it is freed. A mating electrically conductive tine is mounted to the substrate adjacent to the displaceable tine such that a capacitor is formed between the adjacent tines. A plurality of displaceable tines and mating tines may be formed to increase the overall capacitance of the device.

Abstract: To provide a piezoelectric sensor that never sacrifices work properties such as when a lead wire is to be soldered to one of a pair of electrodes of a piezoelectric sensor, and the other electrode is to be bonded and fixed to a predetermined member with an adhesive, and to bond the ground electrode of the piezoelectric sensor to the conductive portion of the object member with an adhesive so as to be fixed and connected electrically, thereby preventing a short-circuit that might occur between the two electrodes due to extruded and stuck adhesive, and to provide an easier method for testing whether or not the ground electrode is connected electrically to the conductive portion of the object member. A piezoelectric sensor has two electrodes that are formed with different materials appropriate for soldering and bonding by an adhesive. The ground electrode of the piezoelectric sensor is bonded to the object member with a non-conductive adhesive so as to be connected electrically.

Abstract: A system and method to measure physical conditions at an object under test. This system comprises at least one micro-electro mechanical die module placed proximate to the object under test. The micro-electro mechanical die module is formed on a substrate and consists of at least one micro-mechanical transducer to monitor physical conditions, a series of integrated circuits electrically connected to the micro-mechanical transducer in order to read the output of the transducer, an internal photo voltaic device located on the substrate, and a transmitter internal to the micro-electro mechanical die module connected to the integrated circuits and a first antenna. A second antenna gathers signals transmitted by the micro-electro mechanical die module. The micro-electro mechanical die module transmits a signal when the photo voltaic device is scanned by a coherent light source.

Abstract: An article and method for measuring strain using a strain gauge made of a shape memory alloy, and preferably a pseudoelastic alloy, is disclosed. The strain gauge includes an element that preferably is attached to a substrate and mounted on an object, or is woven or stitched to a fabric to measure the strain experienced under an applied stress. The preferred pseudoelastic alloy is Nitinol, which in pseudoelastic form can elongate by up to approximately 8% to accommodate strain in an object or fabric. When woven into a fabric, a Nitinol-based strain gauge can measure strains of up to approximately 20% in the fabric. The strain gauge can be used in such applications as automotive and aircraft seatbelts, parachute canopies and static lines, and commercial cargo nets.

Abstract: A sensor having an inner conductor, a piezoelectric layer, and an outer conductor. The piezoelectric layer formed from a piezoelectric strip wrapped around the inner conductor and having adjacent turns wherein substantially each turn overlaps substantially fifty percent of an adjacent turn. The piezoelectric layer has a substantially uniform thickness. The outer conductor substantially surrounds the piezoelectric layer.

Abstract: A microstrain sensor is provided for measuring deformation, and indirectly, other parameters such as acceleration, temperature, pressure, and force. Rather than providing several discreet resistance paths, the microstrain sensor utilizes input and output conductors connected to a single piece of film through which current travels to indicate resistance. The film provides superior resistance to external effects, such as temperature gradients, that decrease the accuracy of the sensor's readings. Such sensors may be easily adapted for use in situations in which opposing stresses are present, such as dually constrained members, by disposing separate or unitary film sections on opposite sides of a zero stress point, such as a central plane of a fixed-guided beam. Such sensors may be utilized in many different applications, including automotive safety systems.

Abstract: A sensor device for registering strain of a component, which comprises a sensor chip and a supporting substrate, which are connected to each other by a connecting layer such that they form a prefabricated sensor module. The sensor module is attached to the component by a durable creep-free connection such that the strain of the component is transferred to the sensor chip.

Abstract: The invention concerns a silicon micromechanical weight sensor (26). According to the invention, the weight sensor comprises at least two conducting electrodes (2, 15) displaced at a distance from each other, whereby one of the elastically suspended electrode surfaces (2) or, alternatively, a structure connected thereto, acts as the pan surface of the weight sensor.

Abstract: A strain sensor ideally suited for use as occupant weight sensors in an automobile is disclosed. The sensor uses stainless steel as a substrate. A portion of this conductive substrate is coated with a dielectric material such as porcelain. Strain sensitive resistors are screened on the dielectric to sense the strain placed on the substrate. This provides a robust and reliable sensor.

Abstract: A force/torque sensor has a semiconductor region which is adapted to be subjected to a force or torque. Two control electrodes are provided on a first and a second side of the semiconductor region, the sides being arranged in spaced, opposed relationship with one another, and a current through the semiconductor region being producible between the control electrodes. Two sensor electrodes are provided on a third and a fourth side of the semiconductor region, the sides being also arranged in spaced, opposed relationship with one another and extending essentially at right angles to said first and second sides. A force or torque applied to the semiconductor region is determinable by detecting a voltage present between the sensor electrodes when a current flows between the control electrodes. The semiconductor region is formed by the channel of a field effect transistor, the drain an source electrodes of said field effect transistor defining the control electrodes.

Abstract: A process for producing a sensor membrane substrate, in particular, for a mass flow sensor or a pressure sensor, the substrate having on its front a membrane, which is fixed at the edge of an opening that is etched free from the back. The process includes the following steps: providing a substrate; local thickening the substrate in an area on the front opposite the edge, the thickened portion having a continuous transition to the substrate; depositing a membrane layer on the front having the locally oxidized area; and etching free the opening from the back to clear the membrane in such a way that the edge is located underneath the thickened area.

Abstract: A strain-sensing device comprises a metal, glass, ceramic, or plastic cell that has formed within it a diaphragm characterized by a thin layer of material bounded by a thick layer of material. A silicon strain gauge, either junction isolated or dielectric isolated, is attached directly to the diaphragm. The strain gauge has at least one sensing element that is aligned such that applied pressure to the diaphragm induces a strain in the sensing element. The silicon strain gauge has a triangular shape that is optimizes the performance and reliability of the sensor with the added benefit of making it more affordable as well.

Abstract: In a method of producing a lever arm with a tip for a scanning microscope wherein, in a wafer including a tip, a piezo-resistive resistance is implanted by means of C-MOS, a metallic layer is first deposited on the wafer, a photo lacquer layer is then deposited on the metallic layer, which photo lacquer layer is then structured, the metallic layer is etched away according to the structuring provided by the etching, and the wafer is bombarded by ions thereby implanting ions in the areas of the wafer from which the metallic layer was etched away and the metallic layer is then fully removed by a wet chemical process.

Abstract: A composition of a high sensitivity sensor for detecting mechanical quantity including: an insulating matrix material; and a conductive path formed by discontinuously dispersing second phase particles of a conductor or a semiconductor into the insulating matrix material at an interparticle distance from 0.001 to 1 &mgr;m, thereby imparting the high sensitivity in the mechanical quantity to the composition.

Abstract: A process for the manufacture of a Coriolis rate-of-rotation sensor with oscillatory support masses spring-suspended on a substrate as well as driving means for the excitation of the planar oscillation of the oscillating masses and evaluation means for the determination of a Coriolis acceleration. Oscillating masses, driving means and integrated stops are structured in a common operation by means of plasma etching from a silicon-on-insulator (SOI) wafer.

Abstract: A microelectric flow sensor including a deformable mechanical element is disclosed. The sensor includes a beam element mounted to a substrate. The beam element is anchored to the substrate on a first end, and deformed to a position normal to the surface of the substrate. An electrode is positioned on the substrate below a portion of the beam, such that when the beam is deflected, an electrical connection is established between the beam and the electrode. An alternate flow sensor includes a sensing beam surrounded by at least two cantilever beams which act as switches. The sensing beam is defined with two mechanically weak points which allow the sensing beam to be mechanically deformed to a new position approximately perpendicular to the cantilever beams and the top surface of the substrate. The substrate also includes electrodes which are positioned underneath the ends of the cantilever beams.

Abstract: The present invention is a novel electronic technique that detects stress/strain in any conductive or semiconductive material. The technique is based on passing a current through the material of interest and analyzing the low frequency voltage fluctuation. The voltage fluctuation is very sensitive to the amount of stress present in the sample. The voltage fluctuation is a result of interactions between the imposed current and material itself. The technique is many orders of magnitude more sensitive than any present method. The technique is suitable for sensitive measurements without a strain gauge. The technique is not limited by sample size, and provides a simple, fast, nondestructive and on-site evaluation of stress/strain in a material.

Abstract: A microelectronics deformation sensor including at least one stress sensor directly integrated on at least one of an extremity of a supported deformable structure and a support of the deformable structure, the deformable structure being constructed of a single crystal material, the at least one stress sensor sensing a stress in a vicinity of the extremity and thereby sensing a deformation of the deformable structure.

Abstract: A sensor mount for mounting a sensor to a substrate having a support member, a substrate attachment surface, and a sensor attachment surface. The support member can be attached to the substrate at the substrate attachment surface and the sensor can be attached to the support member at the sensor attachment surface. The sensor mount is shaped so an oblique angle is formed between the plane that includes the substrate attachment surface and the plane that includes the sensor attachment surfaces. Preferably, the support member has a wedge shape.

Abstract: A miniature piezoresistive sensor includes an undoped single crystal and a doped diamond film deposited by a chemical vapor deposition process on the undoped polycrystalline diamond and having a single crystal grain size of about 1 micron to 1 millimeter. The sensor preferably includes metal contacts in contact with the doped film. The resistance of the sensor varies as a function of strain on the doped diamond film transmitted through the single grain. This inexpensive highly-sensitive sensor can be used for sensing pressure, acceleration, strain or weight. It can also be used as a thermistor.

Abstract: A piezoelectric load sensor includes a plurality of upper piezoelectric elements interposed between upper and intermediate conductors and arranged in a row. A plurality of lower piezoelectric elements are interposed between lower and intermediate conductors and arranged in a row. The upper piezoelectric elements have their piezoelectric constants set so that they gradually decrease from the piezoelectric element located at one end in a direction of arrangement of the upper piezoelectric elements toward the piezoelectric element located at the other end in the direction of arrangement. The lower piezoelectric elements have their piezoelectric constants set so that they gradually increase from the piezoelectric element located at one end in a direction of arrangement of the lower piezoelectric elements toward the piezoelectric element located at the other end in the direction of arrangement.

Abstract: It is possible to detect the compressive force being applied by means of the conventional compressive force detecting sensor. However, the time length and the magnitude of the compressive force fail to be detected and it is impossible to know the extent of damage as a result of the compressive force being applied. For solution of this problem, the compressive force detecting sensor of the invention includes a tape switch composed of a pair of belt-like electrode plates arranged in facing relation to each other with a predetermined spacing therebetween, said tape switch being covered with a pliable covering member therearound; a piezoelectric sensor having a cable or a film like shape laminated on said tape switch; and an outer shell of pliable material to cover said tape switch and said piezoelectric sensor.

Abstract: In a sensor and a method for manufacturing a sensor, a movable element is patterned out of a silicon layer and is secured to a substrate. The conducting layer is subdivided into various regions, which are electrically insulated from one another. The electrical connection between the various regions of the silicon layer is established by a conducting layer, which is arranged between a first and a second insulating layer.

Abstract: A force transducer having a semiconductor substrate including a surface defining a recess, such that the recess has a peripheral boundary and a flexible diaphragm connected to the surface along the peripheral boundary to enclose the recess so that the diaphragm moves in response to changes in a force applied thereto. The force transducer also includes a resonant beam connected to the surface adjacent the peripheral boundary. The resonant beam has a frequency of resonation. Movement of the diaphragm in response to changes in the force applied to the diaphragm changes the frequency of resonation of the resonant beam.

Abstract: A method of fabrication wherein a nitride layer is spaced from a conductive substrate by an insulating layer and etching removes at least portions of an insulating layer to leave a nitride membrane spaced from the substrate. The surface of the conductive layer where the insulating layer is removed is chemically roughened and the etchant is removed by freeze-drying and sublimation to eliminate sticking of the nitride layer to the substrate surface during fabrication.

Abstract: The present invention provides a mechanical sensor high in sensitivity (GF) and reliability. The mechanical sensor comprises an insulating substrate, a pair of electrodes formed on the insulating substrate, and a piezoresistance element formed by connecting the electrodes. The piezoresistance element is substantially made of a glass of the PbO--SiO.sub.2 --B.sub.2 --O.sub.3 --Al.sub.2 O.sub.3 system comprising 73.1 to 86.7 wt % of PbO, 9.7 to 22.2 wt % of SiO.sub.2, 2.5 to 5.0 wt % of B.sub.2 O.sub.3 and 0.9 to 3.6 wt % of Al.sub.2 O.sub.3 and a ruthenium oxide powder dispersed in the glass. The piezoresistance element is formed by coating and baking a paste containing the ruthenium oxide powder, a powder of the glass and an organic binder.

Abstract: A strain gauge has a stainless steel substrate with a dielectric coating comprising two dielectric layers. A circuit comprising conductors, resistors and piezoresistors in a Wheatstone bridge configuration is formed on the dielectric. One dielectric layer is to adhere to the steel and a second is to form a barrier against diffusion of the first layer into the piezoresistor material. An amplification and signal conditioning circuit is applied adjacent the bridge. The steel substrate is to be welded or bolted at its marginal portions to a structure subject to strain.

Abstract: A capacitive sensing array device, such as a fingerprint sensing device, includes an array of individual sensing electrodes (14) covered by a layer of insulating material (40) defining a sensing surface on which a person's finger is placed, each sensing electrode, its overlying fingerprint portion and intervening insulating layer providing a capacitance in operation. The sensing electrodes are of chromium and the covering insulating material includes a thin layer of chromium oxide which offers excellent scratch resistance and can be formed conveniently by oxidation of a surface region of the sensing electrodes. In a row and column array, address lines (18) extending between rows of electrodes (14) may also include chromium and be covered by chromium oxide. Preferably, the sensing electrodes and address lines are defined from a common deposited chromium layer.

Abstract: A 15 mode piezoelectric sensor with mechanical amplification is provided. e sensor consists of two piezoelectric members mounted on an electronically inert, rigid substrate. The two members have an electronically inert amplification device connected between them. When acoustic energy passes through the two members, they develop an electric charge which results in the upper ends of the members moving away from each other. Since the lower ends are anchored in the substrate, this causes a shearing response in the members. The shearing is amplified by the attached amplification device, yielding a strong piezoelectric response. In detection mode, incoming acoustic waves cause a mechanical flex in the attached amplification device. The flex of the amplification device causes a shearing response in the two attached piezoelectric members. This shearing causes a generation of electric charge.

Abstract: An optical semiconductor component (10) includes a substrate (11) having a surface (12), a photodetector (13) supported by the substrate (11), and a seismic mass (21) overlying the surface (12) of the substrate (11) and overlying a portion of the photodetector (13). The seismic mass (21) has a hole (22) overlying a base region (32) of the photodetector (13) wherein the seismic mass (21) is movable relative to the substrate (11) and the photodetector (13).

Abstract: A stress-strain test for conductors. A test assembly receives first and second conductive layers and a dielectric layer adjacent each of the conductive layers. The layers are generally ring-shaped and concentric when received by the test assembly and the dielectric layer separates the conductive layers from each other. A magnetic field source provides a magnetic field to the test assembly and a variable current source provides current to the second conductive layer. A circuit measures a change in capacitance between the conductive layers when the current in the second conductive layer is varied whereby the stress and strain characteristics of the second conductive layer are determined as a function of the capacitance change.

Abstract: A micromachined hot-wire anemometer having fast response times and higher sensitivities than conventional hot-wire anemometers is provided by micromachining doped polysilicon wires carried on silicon supports cantilevered from a substrate including one or more insulating layers disposed between said substrate and supports. The micromachined polysilicon hot-wire anemometer is fabricated using surface micromachining techniques.A shear stress sensor is micromachined to define a thin diaphragm over a cavity defined in a substrate underlying the diaphragm. The cavity is evacuated, sealed, and a thermistor disposed over the diaphragm. The thermistor is thus thermally insulated from the substrate and provides a low profile shear stress sensor for measuring flow rates in boundary layers above a flow surface.

Abstract: A pressure sensor has resistive elements for measuring strain on the surface of a diaphragm. Each resistive element has first and second metallic pads with at least two lines of piezoresistive material formed between the pads, each exhibiting a high length to width aspect ratio. The pressure gauge may be of a one piece, cup-shaped construction having a diaphragm forming the floor of the cup. The internal diameter of the cup is less than 10 mm, and piezoresistive, thick film elements are formed on the inside surface of the diaphragm. The piezoresistive elements may be formed using a pen to trace a pattern of resistive ink on the substrate surface, using a stencil or using electrostatic spraying of the resistive ink onto the substrate surface.

Abstract: A sensor system for measuring physical properties of paper. The paper property sensor system includes a surface and a diaphragm opposed to each other. The small diaphragm includes a first pair and a second pair p-type piezoresistors. Each piezoresistor of the first pair has a longitudinal axis and is located perpendicular to and very close to one of the long edges of the diaphragm. Each piezoresistor of the second pair has a longitudinal axis and is located between and parallel to first pair of piezoresistors, and away from the short edges of the diaphragm. Coupling the first pair of piezoresistors with the second pair via a Wheatstone bridge produces a voltage representative of the shear force exerted by a sheet.

Abstract: A force sensor comprising a substrate, a conductive material providing an electrically discernible response to compressive stress disposed on the substrate, and a thermocouple disposed on the substrate proximate to the conductive material. A measurement processor is also described that includes first means for measuring electrical signals from the conductive material indicative of compressive stress, second means for measuring electrical signals from the thermocouple indicative of temperature in proximity to the conductive material, means for determining a temperature compensating factor derived from the electrical signals indicative of compressive stress and the electrical signals indicative of temperature, and means for determining a temperature compensated compressive stress value derived from the temperature compensating factor and the electrical signals indicative of compressive stress.

Abstract: A semiconductor substrate has a surface layer disposed underneath a gate electrode of a field-effect transistor and having a resistance higher than the resistance of an inner layer which is formed in the semiconductor substrate below the surface layer. The surface layer is formed when a donor doped in the surface layer and an acceptor generated based on a compressive stress which is developed in the surface layer when the gate electrode is formed substantially cancel out each other. The field-effect transistor operates alternatively as a junction field-effect transistor when the surface layer is turned into a p-type structure when a compressive stress is generated in the surface layer and a metal semiconductor field-effect transistor when the surface layer is turned into an n-type structure when a tensile stress is generated in the surface layer.

Abstract: In a sensor and a method for manufacturing a sensor, a movable element is patterned out of a silicon layer and is secured to a substrate. The conducting layer is subdivided into various regions, which are electrically insulated from one another. The electrical connection between the various regions of the silicon layer is established by a conducting layer, which is arranged between a first and a second insulating layer.

Abstract: A strain gauge device for detecting force applied to a planar structure, the device including a capacitor having two spaced conductive surfaces, and a dielectric material between the conductive surfaces with a dielectric constant that varies in relation to strain force normal to the surfaces. In one embodiment, the dielectric material is realized in the form of a pair of facing linear molecule monolayers attached endwise to the respective conductive layers and oriented at an oblique angle to the layers.

Abstract: A piece of single crystal silicon is embedded in a material such that the licon is flush with the surface thereof. The silicon is illuminated with infrared radiation having a wavelength in the range of 800-1100 nanometers. Isochromatic fringe patterns projected from the silicon are monitored as a direct indication of the amount of stress experienced at the surface.

Abstract: A novel GaAs/AlGaAs piezoelectric FET strain sensing transducer is disclosed. An embodiment of the strain sensing transducer includes a single piezoelectric crystal structure forming a cantilever arm and having an FET at the fixed cantilever base. Circuitry connected to measure changes in the conductivity of the FET Channel provides an output signal indicative of the measured strain produced by small forces which alter the conductance of the FET due to piezoelectric effects.

Abstract: An electrostatically actuated micromechanical sensor having a guard band electrode for reducing the effect of transients associated with a dielectric substrate of the sensor. A proof mass, responsive to an input, is suspended over the substrate and one or more electrodes are disposed on the substrate in electrostatic communication with the proof mass to sense the input acceleration and/or to torque the proof mass back to a null position. A guard band electrode is disposed over the dielectric substrate in overlapping relationship with the electrodes and maintains the surface of the substrate at a reference potential, thereby shielding the proof mass from transients and enhancing the accuracy of the sensor. A dissolved wafer process for fabricating the micromechanical sensor is described in which the proof mass is defined by a boron doping step. An alternative fabrication technique is also described in which the proof mass is defined by an epitaxial layer.

Abstract: A micromechanical sensor includes a support of silicon substrate having an epitaxial layer of silicon applied on the silicon substrate. A part of the epitaxial layer is laid bare to form at least one micromechanical deflection part by an etching process. The bared deflection part is made of polycrystalline silicon which has grown in polycrystalline form during the epitaxial process over a silicon-oxide layer which has been removed by etching. In the support region and/or at the connection to the silicon substrate, the exposed deflection part passes into single crystal silicon. By large layer thicknesses, a large working capacity of the sensor is possible. The sensor structure provides enhanced mechanical stability, processability, and possibilities of shaping, and it can be integrated, in particular, in a bipolar process or mixed process (bipolar-CMOS, bipolar-CMOS-DMOS).

Abstract: A method for manufacturing sensors from a multilayer plate with upper and lower monocrystalline silicon layers and an etching layer between them. The upper silicon layer is structured by the introduction of troughs therein extending down to the etching layer. Sensor structures, such as a bending beam that is used in an acceleration sensor, are created by etching the etching layer beneath a part of the silicon layer structured in this manner.

Abstract: A method for fabricating microelectromechanical systems containing a glass diaphragm formed on a silicon macrostructure is disclosed. The method comprises the steps of: (a) obtaining a silicon wafer and forming a cavity in the silicon wafer; (b) using a flame hydrolysis deposition technique to deposite glass soot into the cavity, the glass soot fills the cavity and extends onto the external surface of the silicon wafer so as to form a glass soot layer having a predetermined thickness; and (c) heat-consolidating the glass soot at temperatures between 850.degree. and 1,350.degree. C. so as to cause the glass soot to shrink and form a glass diaphragm over the cavity. The shrinkage ratio between the glass diaphragm and the glass soot layer is between 1:20 to 1:50. The silicon wafer can be further fabricated to contain a diaphragm-sealed cavity and/or a diaphragm-converted cantilever.

Abstract: A pressure transducer comprising a deflecting member fabricated from a semiconducting material having a first conductivity and a negative temperature coefficient of resistance, and four piezoresistive sensors fabricated from a semiconducting material having a second conductivity opposite to the first conductivity and a positive temperature coefficient of resistance, the sensors being disposed on a first surface of the deflecting member whereby the sensors are to be coupled to form a Wheatstone bridge configuration, and a temperature compensating resistor network fabricated from the semiconducting material of the first conductivity whereby when the resistor network is coupled to the sensors coupled in the Wheatstone bridge configuration, and a voltage placed across the bridge and the temperature compensating resistor network, an output is provided by the bridge which is independent of changes in temperature.

Abstract: A method for producing a semiconductor device that is capable of solving problems related to dicing a metal thin film used for electrochemical etching. According to the method, an n type epitaxial thin layer is formed on a p type single-crystal silicon wafer. An n.sup.+ type diffusion layer is formed in a scribe line area on the epitaxial layer. An n.sup.+ type diffusion layer is formed in an area of the epitaxial layer which corresponds to a predetermined portion of the wafer. An aluminum film is formed over the diffusion layers. The aluminum film has a clearance for passing a dicing blade. Portions of the wafer are electrochemically etched by supplying electricity through the aluminum film and the diffusion layers, to leave portions of the epitaxial layer. The wafer is diced into chips along the scribe line area. Each of the chips forms a separate semiconductor device.

Abstract: A sensor microstructure contact scheme is provided for making backside electrical, mechanical, fluidic, or other contact to mechanical microstructures. The contact scheme is applicable to pressure sensors, shear stress sensors, flow rate sensors, temperature sensors, resonant microactuators, and other microsensors and microactuators. The contact scheme provides a microelectromechanical sensor body and support structure for backside contact of the sensor body, and features a support wafer substrate having one or more through-wafer vias each with a lateral span on the dimension of microns and a span that is more narrow at the wafer front surface than at the wafer back surface. An insulating film covers a portion of the support wafer substrate and sidewalls of the vias--with the lateral via span at the front surface being open.

Abstract: A method for forming an air region or an air bridge overlying a base layer (12). Air regions (20a, 20b, 28a, and 48) are formed overlying the base layer (12) to provide for improved dielectric isolation of adjacent conductive layers, provide air-isolated conductive interconnects, and/or form many other microstructures or microdevices. The air regions (20a, 20b, 28a, and 48) are formed by either selectively removing a sacrificial spacer (16a and 16b) or by selectively removing a sacrificial layer (28, 40). The air regions (20a, 20b, 28a, and 48) are sealed, enclosed, or isolated by either a selective growth process or by a non-conformal deposition technique. The air regions (20a, 20b, 28a, and 48) may be formed under any pressure, gas concentration, or processing condition (i.e. temperature, etc.). The air regions (20a, 20b, 28a, and 48) may be formed at any level within an integrated circuit.