Abstract: A multi-zone capacitive force sensing apparatus/method is disclosed. In one embodiment, an apparatus includes one or more capacitors each having an upper conductive surface and a lower conductive surface substantially parallel to the upper conductive surface, a housing with a top plate and a bottom plate to encompass the capacitors, and a sensor in the housing to generate a measurement based on a change in a distance between the upper conductive surface and the lower conductive surface of each of the capacitors when a contact zone of the top plate associated with the each of the plurality of capacitors is deflected by a force applied on the contact zone. The apparatus may also include a comparison module associated with the sensor to generate a signal indicating unevenness of a force applied on the top plate when there is any significant difference between measurements of the capacitors.

Abstract: A strain sensing apparatus including a deformable substrate is presented. The deformable substrate is configured to detect a strain of the body that can be coupled to the deformable substrate. Sometimes, the deformable substrate is a flexible substrate having an upper surface and an opposite lower surface. The lower can be coupled to the body. There are sensing elements fabricated within the flexible substrate and proximate to the upper surface to detect properties of the body. The strain sensing apparatus is able to detect different strain modes, such as whether the strain is the result of bending of a body or a uniaxial elongation. Furthermore, the apparatus is small and less fragile than most conventional sensors, making it easy to use.

Abstract: A microelectromechanical systems stress sensor comprising a microelectromechanical systems silicon body. A recess is formed in the silicon body. A silicon element extends into the recess. The silicon element has limited freedom of movement within the recess. An electrical circuit in the silicon element includes a piezoresistor material that allows for sensing changes in resistance that is proportional to bending of the silicon element.

Abstract: A semiconductor structure comprises a stress sensitive element. A property of the stress sensitive element is representative of a stress in the semiconductor structure. Additionally, the semiconductor structure may comprise an electrical element. The stress sensitive element and the electrical element comprise portions of a common layer structure. Analyzers may be adapted to determine a property of the stress sensitive element being representative of a stress in the semiconductor structure and a property of the electrical element. The property of the stress sensitive element may be determined and the manufacturing process may be modified based on the determined property of the stress sensitive element. The property of the electrical element may be related to the property of the stress sensitive element in order to investigate an influence of stress on the electrical element.

Abstract: A highly sensitive and ultra-high density array of electromechanical nanowires is fabricated. Nanowires are extremely sensitive to the strain induced by the attachment of biological and chemical species. Real-time detection is realized through piezoresistive transduction from the specially designed materials that form the nanowires. These specially designed materials include doped silicon or germanium, doped III-V semiconductors such as GaAs, GaN and InAs systems, and ultra-thin metal films.

Abstract: A composite material has a laminated structure of fiber-reinforced resin layers and films of a shape-memory alloy. A predetermined strain has been applied to each film. A damage sensor has a film of an alloy of nickel and titanium. An electric circuit is bonded to the film, and strain gages are connected to the electric circuit. The damage sensor can be laminated to the resin layers in place of the film of the shape-memory alloy. Damage to the composite material is suppressed as follows: A current is applied to the films of the shape-memory alloy, to monitor change in electric resistance of the films. The damage is located in response to the change in electric resistance. Another current is applied to a film of the shape-memory alloy for which the change is larger than the other films to generate heat for deforming the film to generate shrinking stress or shear stress to the damage.

Abstract: A bolt with a function of measuring strain, comprising a Wheatstone bridge circuit comprising a strain sensor and a dummy resistor, a translate circuit that amplifies a signal from the Wheatstone bridge circuit to convert the same into a digital signal, a transmitting circuit that transmits the digital signal outside the bolt, and a power circuit, by which electromagnetic wave energy received from outside the bolt is supplied as a power source for at least any one of the circuits.

Abstract: A hermetically sealed displacement sensor has strain gauges placed on thin flexible triangular shaped beams of a load beam cell. The strain gauges are enclosed in a hermetically sealed cavity which cavity is sealed by means of a cover plate placed over the load beam cell. The thin beams are connected together by a center hub and basically form two constant moment beams. There is a top isolation diaphragm member which is convoluted and to which a force is applied which applied force is transmitted to the thin flexible beams. The beams deflect and the sensors produce an output proportional to strain. The sensors on each beam are two in number wherein one sensor is placed in a longitudinal direction with respect to the beam while the other sensor is in a transverse position. The sensors may be wired to form a full Wheatstone bridge or half bridges may be employed. The electrical output from the strain gauge bridge is proportional to the deflection of the center of the sensor.

Abstract: It is an object to prevent breakage of a mechanical quantity measuring apparatus made of a monocrystalline silicon substrate due to a large distortion. A mounting board for measuring distortion is provided on a rear surface of a sensor chip made of a semiconductor monocrystalline substrate having a distortion detecting unit. Even when a large distortion occurs in an object to be measured, a distortion occurring in the semiconductor monocrystalline substrate can be controlled by the mounting board. Therefore, the semiconductor monocrystalline substrate is not broken, and a highly reliable mechanical quantity measuring apparatus can be provided.

Abstract: A fluid pressure sensor (1) for measuring the pressure of a fluid comprises a diaphragm portion (12) which is a strain generating body, a silicon oxide film (21) as an insulating film, and a strain gauge (20) made of crystalline silicon, and austenitic precipitation hardening type Fe—Ni heat-resisting steel excellent in mechanical strength and corrosion resistance is used for the diaphragm portion (12). The silicon oxide film (21) is formed with the internal stress thereof adjusted to the range from ?150 to 130 MPa. With this feature, the fluid pressure sensor (1) ensures high precision and reliability, and may be used even for measurement of a highly corrosive fluid.

Abstract: The integrated circuitry on a semiconductor substrate includes an integrated circuit arranged in a circuit area of the semiconductor substrate and a stress-sensitive structure on the semiconductor substrate for detecting a mechanical stress component in the semiconductor substrate, wherein the stress-sensitive structure is implemented to provide an output signal depending on the mechanical stress component in response to an excitation and to a mechanical stress component, wherein the stress-sensitive structure is arranged in a sensor area of the semiconductor substrate and wherein the circuit area and the sensor area are spatially separated.

Abstract: An extraordinary magnetoresistance (EMR) sensor has a planar shunt and planar leads formed on top of the sensor and extending downward into the semiconductor active region, resulting. Electrically conductive material, such as Au or AuGe, is first deposited into lithographically defined windows on top of the sensor. After liftoff of the photoresist a rapid thermal annealing process causes the conductive material to diffuse downward into the semiconductor material and make electrical contact with the active region. The outline of the sensor is defined by reactive etching or other suitable etching techniques. Insulating backfilling material such as Al-oxide is deposited to protect the EMR sensor and the edges of the active region. Chemical mechanical polishing of the structure results in a planar sensor that does not have exposed active region edges.

Abstract: A beam-type sensor capable of measuring displacement or acceleration includes a thin, flexible sheet of piezoresponsive material defining broad sides and a proximal end. In order to optimize boundary conditions, the proximal end of the sheet is supported by a clamp that provides a “clean” transition between support and no-support. Electrical connections to conductors associated with the broad sides are integrated into the clamp. In one embodiment, two sheets of piezoelectric material are connected electrically in parallel. In another embodiment, two sheets of piezoelectric material are connected electrically in series.

Abstract: An improved strain gage and an improved manufacturing method are disclosed. The strain gage includes a semi-rigid substrate having a thickness of 3 to 30 mils, a resistive strain sensitive foil bonded to the semi-rigid substrate for providing a resistance varying with strain associated with a surface to which the strain gage is attached, a first and a second terminal operatively connected to the resistive strain sensitive foil, and an anti-static layer. The improved strain gage allows for reduced labor content in manufacturing by allowing use of modern automated electronic component manufacturing equipment.

Abstract: A strain gage sensor having improved operational aspects and lower production costs. The strain gage sensor includes two active resistors, two passive resistors, and a structure for minimizing strain experienced by the two passive resistors. The active and passive resistors are attached in a Wheatstone bridge configuration and are Piezoresistors. The active resistors and the strain minimizing structures are mounted on the backing plate. The backing plate or the strain minimizing structure includes alumina ceramic substrate. A voltage to current converter circuit is attached to the active and passive resistors and mounted to the backing plate. Multiple Wheatstone bridge circuits or multiple Wheatstone bridge circuits with voltage to current converter circuits are manufactured on a single backing plate and separated prior to use.

Abstract: A contact pressure sensor (10) and method for manufacturing a contact pressure sensor for detecting contact pressure between two surfaces is disclosed. The contact pressure sensor disclosed comprises a substrate (40) for supporting the sensor and a contact pressure sensitive layer (26) sensitive to pressure applied to the contact pressure sensor. The method disclosed also comprises transferring a process post structure (8) that is formed on a first process support substrate (20) from the first process support substrate to a second contact pressure sensor support substrate (40).

Abstract: A piezoelectric flexural sensing structure having increased sensitivity and decreased noise, without sacrifice of the sensor bandwidth. The structure is made up of a proof mass, a beam with a base and optionally having castellated bonding surfaces and two <011> poled bonding mode PMN-PT crystal plates mounted on the beam.

Abstract: System and method for measuring static load by using a piezoelectric load sensor with a feedback technique to compensate for the signal loss due to charge leakage, and therefore ensures measurement accuracy. The system is integrated with other structure, objects and devices to measure static loads applied to a mechanical shaft, in an on-line, in-process, quasi real-time fashion. The system can be used to measure static load and thus oversee an entire machine system or a manufacturing process.

Abstract: Extraordinary piezoconductance, or change in conductance with strain or pressure, is observed in a hybrid metal-semiconductor device formed from a semiconductor thin film and an adjacent metal shunt fabricated on a semi-insulating substrate. The device includes electrodes for applying a current to the device and for measuring a resulting induced voltage. Strain that is induced in the device, including at the interface between the semiconductor and the metal shunt, changes the resistance at the interface. The device can be used to measure strain or environmental conditions such as pressure or temperature. A sensor using the device includes a frame with a thin membrane on which the device is carried. Deformations in the membrane are transferred to the device to induce strain in the device.

Abstract: The present invention relates to a sensor for measuring actual loads acting upon a surface of a mechanical component, wherein as a sensor an amorphous hydrocarbon layer with piezoresistive properties is used, which is preferably doped with at least one metallic and/or non-metallic element and is connected by contacts to a measuring device; the present invention further relates to the use of carbon layers having piezoresistive properties and preferably doped with metallic and/or non-metallic elements as a sensor for load measurements, as well as to a method of measuring actual loads at stressed surfaces of mechanical components, wherein as a measuring sensor an amorphous carbon layer preferably doped with metallic and/or non-metallic elements is used.

Abstract: An inertial sensor such as an acceleration sensor or gyro can have superior impact resistance by regulating displacement of a weight portion in the direction of an upper limit. The sensor includes a sensor portion that has a fixing part, a weight portion the height of which is a predetermined size shorter than that of the fixing part, and a beam portion that links the weight portion and the fixing part; a plate-like first stopper portion that covers the weight portion and is bonded to the fixing part with clearance of a predetermined size from the weight portion; and a flat, plate-like second stopper portion that is connected to the fixing part via a bump of a predetermined height on the side opposite the first stopper portion.

Abstract: A strain sensor includes a metal plate, a first glass layer on the metal plate, a second glass layer provided on the first glass layer and having a color different from that of the first glass layer, an electrode on the second glass layer, a strain-sensitive resistor on the second glass layer, a circuit pattern on the second glass layer for connecting the electrode to the strain-sensitive resistor, and an overcoat glass layer for covering the strain-sensitive resistor and the circuit pattern. The strain sensor allows the layers to be identified while being manufactured, hence being controlled easily in its manufacturing processes.

Abstract: A force sensing element is provided with a gauge portion and a plurality of electrodes. The gauge portion is formed of an n-type semiconductor substrate whose (100)-face serves as a main face, a p-type semiconductor substrate whose (110)-face serves as a main face, or a p-type semiconductor substrate whose (111)-face serves as a main face, and is pressed in a thickness direction of the semiconductor substrate upon receiving a force. The electrodes are electrically connected to the gauge portion such that a current path extending in a direction corresponding to the thickness direction of the semiconductor substrate is formed in the gauge portion. The force sensing element thus constructed makes it possible to detect a force with high precision.

Abstract: A dynamic quantity sensor device capable of measuring a dynamic quantity at a high precision and securing insulation of a pressure sensing body easily. This dynamic quantity sensor includes a pressure sensing body composed of composite ceramics in which a material having a pressure resistance effect is dispersed on a matrix made of an electrical insulation ceramic material and a pressure receiving body having an electrical insulation characteristic and disposed on a pressure receiving surface of the pressure receiving body, wherein the pressure sensing body and the pressure receiving body are integrated with each other.

Abstract: A sensor for measuring stress corrosion cracking and methods of using the sensor. The sensor is a MEMS device and has a cantilevered beam made from a material of interest. The sensor has on-chip electrical connections for measuring electrical characteristics that indicate cracking of the beam. The sensor may further have on-chip actuators for applying stress to the beam.

Abstract: Force detection devices may have high detection precision and may prevent current leakage through a strain gage 126 to the outside. For example, a force detection block 120 may include a semiconductor substrate 122, a first insulating layer 124 and a semiconductor layer 126 (strain gage). The strain gage 126 preferably includes a site where resistance changes in accordance with the stress acting thereon. The strain gage 126 preferably constitutes at least a portion of a ridge 130 projects from the surface of the force detection block 120. A force transmission block 138 may be attached to a top surface of the ridge 130. The width of the first insulating layer 124 is preferably greater than the width of the semiconductor layer 126.

Abstract: The object of the present invention is to propose an etch channel sealing structure characterized by excellent impermeability to moisture and resistance to temporal change of the diaphragm in the pressure sensor produced according to the sacrificial layer etching technique, and to provide a pressure sensor characterized by excellent productivity and durability. After a very small gap is formed by the sacrificial layer etching technique, silicon oxide film is deposited by the CVD technique or the like, thereby sealing the etch channel. Further, impermeable thin film of polysilicon or the like is formed to cover the oxide film. This allows an etch channel sealing structure to be simplified in the pressure sensor produced according to the sacrificial layer etching technique, and prevents entry of moisture into the cavity, thereby improving moisture resistance. Moreover, sealing material with small film stress reduces temporal deformation of the diaphragm.

Abstract: There is disclosed a semiconductor sensor for measuring the contact shear stress distribution between the socket of an above-knee (AK) prostheses and the soft tissue of an amputee's stump. The sensor is fabricated by the micro-electro-mechanical system (MEMS) technology, and its main sensing part is 2-X shaped with a flange structure. The sensor is prepared by anisotropic wet etching of bulk silicon in KOH solution and a square flange above the sensing diaphragm is formed through surface micromachining of deposited SiO2 thin film. This invention has the following characteristics: piezo-resistivity of the monolithic silicon will be utilized to convert shear deformation of the sensor into an electrical signal and a micro sensor which can measure the shear force vector acting on the sensing flange.

Abstract: The invention relates to a device and a method for detecting the reliability of integrated semiconductor components. The device includes a carrier substrate for receiving an integrated semiconductor component that will be examined, a heating element, and a temperature sensor. The temperature sensor has at least a portion of a parasitic functional element of the semiconductor component. As a result, reliability tests can be carried out in a particularly accurate and space-saving manner.

Abstract: In a diaphragm (30) having a square shape comprising four sides of a pair of first sides (31, 32) extending along the <110> crystal axis direction and a pair of second sides (33, 34) extending along the <100> crystal axis direction, when an axis bisecting each of the first sides (31, 32) of the diaphragm (30) and passing through the center point of the diaphragm is set as a first axis K1 and an axis vertically-intersecting to the first axis K1 and passing through the center point of the diaphragm is set as a second axis K2, each of the side gages Rs1, Rs2 is located on a virtual line T1, T2, T3, T4 which extends from the center point of each of the center gages Rc1, Rc2 to the peripheral portion of the diaphragm (30) and intersects to the first axis K1 and the second axis K2 at 45°.

Abstract: A pressure sensor has a housing having a first block and a second block provided therein. A force to be measured applies upon a upper face of the first block. An upper face of the second block makes contact with a base face of the first block. Piezoresistive elements are formed within the base face of the first block. The resistance values of these piezoresistive elements change as contacting pressure between the first block and the second block changes. A first electrode is formed on an upper face of the first block. A second electrode is formed on a base face of the second block. Electrical characteristics between the first electrode and the second electrode change following change in the contacting pressure between the first block and the second block.

Abstract: A strain detector where water does not reach a strain-resistance element and which supplies stable output at all times is provided. In the strain detector, a first protective layer made of glass is disposed to cover an insulating substrate and the strain-resistance element. A second protective layer made of resins or glass for covering the first protective layer, and a thermistor for compensating the resistance of the strain-resistance element are disposed.

Abstract: A sensor device for registering strain of a component, which comprises a sensor chip and a supporting substrate, which are connected to each other by a connecting layer such that they form a prefabricated sensor module. The sensor module is attached to the component by a durable creep-free connection such that the strain of the component is transferred to the sensor chip.

Abstract: A strain sensor includes a metal plate, a first glass layer on the metal plate, a second glass layer provided on the first glass layer and having a color different from that of the first glass layer, an electrode on the second glass layer, a strain-sensitive resistor on the second glass layer, a circuit pattern on the second glass layer for connecting the electrode to the strain-sensitive resistor, and an overcoat glass layer for covering the strain-sensitive resistor and the circuit pattern. The strain sensor allows the layers to be identified while being manufactured, hence being controlled easily in its manufacturing processes.

Abstract: An improved strain gage is disclosed. The strain gage includes a semi-rigid substrate having a thickness of about 1 to about 30 mils, a resistive strain sensitive foil bonded to the semi-rigid substrate for providing a resistance varying with strain associated with a surface to which the strain gage is attached, and a first and a second terminal operatively connected to the resistive strain sensitive foil.

Abstract: A support for facilitating the bending test of flexible substrates is disclosed. The support includes a plastic or adhesive plastic applied on the substrate to keep the shards together after breakage, thereby eliminating the process of collecting the shards and fitting them back together for failure analysis.

Abstract: A strain detector where water does not reach a strain-resistance element and which supplies stable output at all times is provided. In the strain detector, a first protective layer made of glass is disposed to cover an insulating substrate and the strain-resistance element. A second protective layer made of resins or glass for covering the first protective layer, and a thermistor for compensating the resistance of the strain-resistance element are disposed.

Abstract: An inertial sensor with failure threshold includes a first body and a second body, which can move relative to one another and are constrained by a plurality of elastic elements, and a sample element connected between the first body and the second body and shaped so as to be subjected to a stress when the second body is outside of a relative resting position with respect to the first body. The sample element has at least one weakened region. The sensor may also include additional sample elements connected between the first and second bodies.

Abstract: Extraordinary piezoconductance, or change in conductance with strain or pressure, is observed in a hybrid metal-semiconductor device formed from a semiconductor thin film and an adjacent metal shunt fabricated on a semi-insulating substrate. The device includes electrodes for applying a current to the device and for measuring a resulting induced voltage. Strain that is induced in the device, including at the interface between the semiconductor and the metal shunt, changes the resistance at the interface. The device can be used to measure strain or environmental conditions such as pressure or temperature. A sensor using the device includes a frame with a thin membrane on which the device is carried. Deformations in the membrane are transferred to the device to induce strain in the device.

Abstract: A substrate for a MEMS device includes a base material having a first side, a poly silicon strain gage formed on the first side of the base material, a dielectric material disposed over the strain gage, and a conductive material in communication with the strain gage through the dielectric material, wherein the substrate is adapted to have at least one opening formed therethrough, and wherein the strain gage is adapted to be formed adjacent the at least one opening.

Abstract: The present invention relates to a miniature rheometer, a parallel rheometer, and improved force sensor elements which may advantageously be used in combination with the miniature rheometer and the parallel rheometer. The miniature rheometer is adapted to determine rheological characteristics of materials which are provided in the form of small quantity samples. The miniature rheometer comprises an actuating element, a sensing element and a feedback circuit to provide rebalance of the shear force applied by the sample to the sensing element, which insures an exceptional stiffness in determining the shear strain so as to allow measurements of high accuracy. The parallel rheometer of the present invention allows simultaneous measurements of a plurality of samples so as to allow of a plurality of samples within a short time period. The force sensor element according to the present invention allows simultaneous measurement of a shear force and a normal force applied to the sensor element.

Abstract: For the metal substrate of a strain sensor, a Mo-containing two-phase stainless steel SUS329 is used. When an insulating layer, electrodes and a resistor are formed on the metal substrate by baking their materials, the alpha phase in the stainless steel of the metal substrate changes to a sigma phase through the baking heat, and, as a result, the range of strain applicable to the sensor within the elastic region of the substrate is broadened and the residual strain of the substrate is reduced. The strain sensor has a broad strain-detectable range and is readily restored to its starting point.

Abstract: A self-compensated strain gage sensor having a temperature co-efficient of resistance (TCR) of essentially zero comprised of a wide band semiconductor and a compensating metal functioning as serial resistors. Based on the resistivity of the semiconductor and the metal and the temperature range in which the sensor will operate the dimensions of the semiconductor and the metal are determined to provide a zero TCR.

Abstract: An oscillation sensing device includes a magnetised member mounted on a substrate. A magneto-electrical material is mounted on the substrate such that the magneto-electrical material is subjected to the magnetic field generated by the magnetised member. A movable member is mounted for oscillation in response to an oscillating force. Oscillation of the movable member causes a change in the magnetic field experienced by the magneto-electrical material and an electrical property of the electro-electrical material changes in response to changes in the magnetic field experienced by the magneto-electrical material due to oscillation of the movable member.

Abstract: A screwer test bench includes a coupling designed for connection with the head of a screwer and connected to a controlled braking unit and a sensor unit for detection of mechanical magnitudes transmitted between the coupling and the braking unit. The braking unit includes a thin cap constrained to said coupling at least in the direction of rotation and arranged between a first pressure surface thrust axially against the cap by an actuator and a second fixed opposition surface.

Abstract: A force sensing element is provided with a gauge portion and a plurality of electrodes. The gauge portion is formed of an n-type semiconductor substrate whose (100)-face serves as a main face, a p-type semiconductor substrate whose (110)-face serves as a main face, or a p-type semiconductor substrate whose (111)-face serves as a main face, and is pressed in a thickness direction of the semiconductor substrate upon receiving a force. The electrodes are electrically connected to the gauge portion such that a current path extending in a direction corresponding to the thickness direction of the semiconductor substrate is formed in the gauge portion. The force sensing element thus constructed makes it possible to detect a force with high precision.

Abstract: MEM devices are fabricated with integral dust covers, cover support posts and particle filters for reduced problems relating to particle contamination. In one embodiment, a MEM device (10) includes an electrostatic actuator (12) that drives a movable frame (14), a displacement multiplier (16) for multiplying or amplifying the displacement of the movable frame (14), and a displacement output element (18) for outputting the amplified displacement. The actuator (12) is substantially encased within a housing formed by a cover (36) and related support components disposed between the cover (36) and the substrate (38). Electrically isolated support posts may be provided in connection with actuator electrodes to prevent contact between the cover and the underlying electrodes. Such a support post may also incorporate an electric filter element for filtering undesired components from a drive signal.

Abstract: A microstrain sensor is provided for measuring deformation, and indirectly, other parameters such as acceleration, temperature, pressure, and force. Rather than providing several discreet resistance paths, the microstrain sensor utilizes input and output conductors connected to a single piece of film through which current travels to indicate resistance. The film provides superior resistance to external effects, such as temperature gradients, that decrease the accuracy of the sensor's readings. Such sensors may be easily adapted for use in situations in which opposing stresses are present, such as dually constrained members, by disposing separate or unitary film sections on opposite sides of a zero stress point, such as a central plane of a fixed-guided beam. Such sensors may be utilized in many different applications, including automotive safety systems.

Abstract: The present invention relates to a miniature rheometer, a parallel rheometer, and improved force sensor elements which may advantageously be used in combination with the miniature rheometer and the parallel rheometer. The miniature rheometer is adapted to determine rheological characteristics of materials which are provided in the form of small quantity samples. The miniature rheometer comprises an actuating element, a sensing element and a feedback circuit to provide rebalance of the shear force applied by the sample to the sensing element, which insures an exceptional stiffness in determining the shear strain so as to allow measurements of high accuracy. The parallel rheometer of the present invention allows simultaneous measurements of a plurality of samples so as to allow of a plurality of samples within a short time period. The force sensor element according to the present invention allows simultaneous measurement of a shear force and a normal force applied to the sensor element.

Abstract: A method for determining usability of a cover material as a cover of a vehicle seat component includes determining a fabric stretch requirement for the vehicle seat component; determining actual fabric stretch of the cover material; and comparing the actual fabric stretch with the fabric stretch requirement to determine whether the cover material is satisfactory for use with the vehicle seat component as the cover.