Scanning Tunnelling Potentiometry [stp] (epo) Patents (Class 850/28)
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Patent number: 8695110Abstract: In a near-field scanning microscope using an aperture probe, the upper limit of the aperture formation is at most several ten nm in practice. In a near-field scanning microscope using a scatter probe, the resolution ability is limited to at most several ten nm because of the external illuminating light serving as background noise. Moreover, measurement reproducibility is seriously lowered by a damage or abrasion of a probe. Optical data and unevenness data of the surface of a sample can be measured at a nm-order resolution ability and a high reproducibility while damaging neither the probe nor the sample by fabricating a plasmon-enhanced near-field probe having a nm-order optical resolution ability by combining a nm-order cylindrical structure with nm-order microparticles and repeatedly moving the probe toward the sample and away therefrom at a low contact force at individual measurement points on the sample.Type: GrantFiled: August 15, 2012Date of Patent: April 8, 2014Assignee: Hitachi, Ltd.Inventors: Toshihiko Nakata, Masahiro Watanabe, Takashi Inoue, Kishio Hidaka, Motoyuki Hirooka
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Patent number: 8327461Abstract: The invention is directed to a probe for scanning probe microscopy. The probe 20 comprises a tunnel-current conducting part 30 and a tunnel-current insulating part 40. The said parts are configured such that the insulating part determines a minimal distance between the conducting part 30 and the sample surface. The invention may further concern a scanning probe microscope having such a probe, and a corresponding scanning probe microscopy method. Since the distance to the sample surface 100 is actually determined by the insulating part 40, controlling the vertical position of the probe 20 relative to the sample surface is easily and rapidly achieved. The configuration of the parts allows for a fast scan of the sample surface, whereby high-speed imaging can be achieved. Further, embodiments allow for topographical variations to be accurately captured through tunneling effect.Type: GrantFiled: January 15, 2010Date of Patent: December 4, 2012Assignee: International Business Machines CorporationInventors: Harish Bhaskaran, Michel Despont, Abu Sebastian
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Patent number: 8134131Abstract: An object of the invention is to provide a method and apparatus for observing inside structures and a specimen holder, wherein aging degradation of a good sample to a bad sample can be tracked in the same field of view, using the same specimen in order to determine the mechanism of failure. The present invention is a method for observing inside structures. The method comprises irradiating a specimen with a corpuscular beam generated from a corpuscular beam source, detecting transmitted particles transmitted by the specimen, applying a voltage to a portion of the specimen, and observing of a detection status of the transmitted particles in the voltage-applied portion as needed.Type: GrantFiled: December 8, 2008Date of Patent: March 13, 2012Assignee: Hitachi, Ltd.Inventors: Shohei Terada, Kazutoshi Kaji, Shigeto Isakozawa
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Patent number: 8069492Abstract: A spin-torque probe microscope and methods of using the same are described. The spin-torque probe microscope includes a cantilever probe body, a magnetic tip disposed at a distal end of the cantilever probe body, an electrically conductive sample disposed proximate to the magnetic tip, an electrical circuit providing a spin-polarized electron current to the electrically conductive sample, and a vibration detection element configured to sense vibration frequency of the cantilever probe body. The spin-polarized electron current is sufficient to alter a local electron spin or magnetic moment within the electrically conductive sample and be sensed by the magnetic tip.Type: GrantFiled: March 31, 2008Date of Patent: November 29, 2011Assignee: Seagate Technology LLCInventors: Haiwen Xi, Song S. Xue
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Publication number: 20110289636Abstract: The invention is directed to a probe for scanning probe microscopy. The probe 20 comprises a tunnel-current conducting part 30 and a tunnel-current insulating part 40. The said parts are configured such that the insulating part determines a minimal distance between the conducting part 30 and the sample surface. The invention may further concern a scanning probe microscope having such a probe, and a corresponding scanning probe microscopy method. Since the distance to the sample surface 100 is actually determined by the insulating part 40, controlling the vertical position of the probe 20 relative to the sample surface is easily and rapidly achieved. The configuration of the parts allows for a fast scan of the sample surface, whereby high-speed imaging can be achieved. Further, embodiments allow for topographical variations to be accurately captured through tunneling effect.Type: ApplicationFiled: January 15, 2010Publication date: November 24, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Harish Bhaskaran, Michel Despont, Abu Sebastian