Probes, Their Manufacture, Or Their Instrumentation, E.g., Holders (epo) Patents (Class 850/45)
  • Patent number: 8621661
    Abstract: Disclosed is an electrical-mechanical complex sensor for nanomaterials, including: a detector having a piezoelectric film therein, for measuring a mechanical property of a nanomaterial when a bending or tensile load is applied to the nanomaterial; a first detection film formed at an end of the detector to measure the mechanical property and an electrical property of the nanomaterial) in real time at the same time, when the nanomaterial contacts the first detection film; and a support to which one end of the detector is integrally connected, for supporting the detector.
    Type: Grant
    Filed: January 10, 2011
    Date of Patent: December 31, 2013
    Assignee: Korea Research Institute of Standards and Science
    Inventors: Seung Hoon Nahm, Hoon Sik Jang, Sang Gu Jeon, Min Seok Kim
  • Patent number: 8539611
    Abstract: A method of creating a probe for scanned probe microscopy is disclosed. The method includes providing a wafer having a support wafer layer and a device layer. The method includes masking the wafer with a masking layer. The method includes removing a portion of the masking layer at the device layer. The method includes etching the wafer along the portion of the masking layer that has been removed to create a crystal facet surface that is oriented at a tilt angle. The method includes epitaxially growing a tip along the crystal facet surface.
    Type: Grant
    Filed: July 12, 2012
    Date of Patent: September 17, 2013
    Assignees: International Business Machines Corporation, Cornell University
    Inventors: Mark C. Reuter, Brian A. Bryce, Bojan R. Ilic, Sandip Tiwari
  • Patent number: 8287745
    Abstract: Disclosed is a method for fabricating a probe tip, capable of preventing a rapid increase of a surface size of a front end of the probe tip as the probe tip is worn out by a frequent contact with a wafer chip and, also, capable of improving the precision of the front end of the probe tip. The method for fabricating a probe tip includes forming a front end of the probe tip on a silicon wafer; forming a first protective layer which is patterned to expose a part of the front end of the probe tip; and forming a body of the probe tip in a portion opened by the pattern of the first protective layer.
    Type: Grant
    Filed: May 29, 2008
    Date of Patent: October 16, 2012
    Assignee: M2N Inc.
    Inventors: Ki Pil Hong, Jong Hyeon Chae, Hac Ju Lee
  • Patent number: 7814565
    Abstract: Techniques for forming a nanostructure on a probe tip are provided.
    Type: Grant
    Filed: August 27, 2008
    Date of Patent: October 12, 2010
    Assignee: SNU R&DB Foundation
    Inventors: Yong Hyup Kim, Tae June Kang