Abstract: A nanocarbon separation method includes a step of preparing a dispersion liquid having nanocarbons dispersed therein; a step of injecting a liquid including the dispersion liquid into an electrophoresis tank so that a pH of the liquid increases from a bottom to a top in a direction of gravitational force; and a step of applying a direct current to electrodes disposed in an upper part and a lower part of the electrophoresis tank.

Abstract: A single-walled carbon nanotube separation apparatus includes: a separation tank accommodating a single-walled carbon nanotube dispersion liquid containing: metallic single-walled carbon nanotubes; and semiconducting single-walled carbon nanotubes; a first electrode and a second electrode that are installed in the separation tank; and a partition wall installed between the first electrode and the second electrode in the separation tank and below the separation tank in a height direction thereof.

Abstract: A nanocarbon separation device of the present invention includes a separation tank which is configured to accommodate a dispersion liquid including a nanocarbon, a first electrode that is provided at an upper part in the separation tank, a second electrode that is provided at a lower part in the separation tank, and a porous structure that is provided between the first electrode and the second electrode in the separation tank.

Abstract: A nanocarbon separation device includes a separation tank which is configured to accommodate a dispersion liquid including a nanocarbon, a first electrode that is provided at an upper part in the separation tank, a second electrode that is provided at a lower part in the separation tank, and a partition member that is provided between the first electrode and the second electrode in the separation tank, and the partition member partitions the separation tank into a plurality of regions.

Abstract: Photovoltaic devices are driven by intense photoemission of “hot” electrons from a suitable nanostructured metal. The metal should be an electron source with surface plasmon resonance within the visible and near-visible spectrum range (near IR to near UV (about 300 to 1000 nm)). Suitable metals include silver, gold, copper and alloys of silver, gold and copper with each other. Silver is particularly preferred for its advantageous opto-electronic properties in the near UV and visible spectrum range, relatively low cost, and simplicity of processing.

Abstract: To provide a method for manufacturing a power storage device which enables improvement in performance of the power storage device, such as an increase in discharge capacity. To provide a method for forming a semiconductor region which is used for a power storage device or the like so as to improve performance. A method for forming a crystalline semiconductor region includes the steps of: forming, over a conductive layer, a crystalline semiconductor region that includes a plurality of whiskers including a crystalline semiconductor by an LPCVD method; and performing heat treatment on the crystalline semiconductor region after supply of a source gas containing a deposition gas including silicon is stopped. A method for manufacturing a power storage device includes the step of using the crystalline semiconductor region as an active material layer of the power storage device.

Abstract: The present disclosure provides a catalyst-free growth mode of defect-free Gallium Arsenide (GaAs)-based nanoneedles on silicon (Si) substrates with a complementary metal-oxide-semiconductor (CMOS)-compatible growth temperature of around 400° C. Each nanoneedle has a sharp 2 to 5 nanometer (nm) tip, a 600 nm wide base and a 4 micrometer (?m) length. Thus, the disclosed nanoneedles are substantially hexagonal needle-like crystal structures that assume a 6° to 9° tapered shape. The 600 nm wide base allows the typical micro-fabrication processes, such as optical lithography, to be applied. Therefore, nanoneedles are an ideal platform for the integration of optoelectronic devices on Si substrates. A nanoneedle avalanche photodiode (APD) grown on silicon is presented in this disclosure as a device application example. The APD attains a high current gain of 265 with only 8V bias.

Abstract: The present disclosure provides a light emitting diode and a method of manufacturing the same. The light emitting diode includes a graphene layer on a second conductive semiconductor layer and a plurality of metal nanoparticles formed on some region of the graphene layer, whereby adhesion between the second conductive semiconductor layer comprised of an inorganic material and the graphene layer is enhanced, thereby securing stability and reliability of the light emitting diode. In addition, the light emitting diode allows uniform spreading of electric current, thereby allowing stable emission of light through a surface area of the light emitting diode.

Abstract: A gas filter comprises a housing (30) having a gas inlet (55), a gas outlet (65) and at least one chamber (70) therebetween containing carbon nanotubes (110). The chamber (70) has a port (90) and is configured for simultaneous gas ingress to and gas egress from the carbon nanotubes (110) through the port (90).

Abstract: Methods and apparatus for storing information or energy. An array of nano vacuum tubes is evacuated to a pressure below 10?6 Torr, where each nano vacuum tube has an anodic electrode, a cathodic electrode spaced apart from the anodic electrode, and an intervening evacuated region. An excess of electrons is stored on the cathodic electrode.

Abstract: A method is provided for consuming oxides in a silicon (Si) nanoparticle film. The method forms a colloidal solution film of Si nanoparticles overlying a substrate. The Si nanoparticle colloidal solution film is annealed at a high temperature in the presence of titanium (Ti). In response to the annealing, Si oxide is consumed in a resultant Si nanoparticle film. In one aspect, the consuming the Si oxide in the Si nanoparticle film includes forming Ti oxide in the Si nanoparticle film. Also in response to a low temperature annealing, solvents are evaporated in the colloidal solution film of Si nanoparticles. Si and Ti oxide molecules are sintered in the Si nanoparticle film in response to the high temperature annealing.

Abstract: Cellular automotion digital material is useable for rapid prototyping and fabrication of continuous string conformations and two- or three-dimensional shapes through actuation of a string, surface, or volume composed of identical discrete units. Each unit is an actuated joint having a single degree of freedom. The actuated joint includes a two-part actuator having an inner active portion and an outer passive portion that are controllably rotatable relative to each other, the outer portion being configured to fit within the housing of an adjacent cellular automotion unit, and a linkage element that includes a main strut and a housing and is connected to the actuator by a pin connector.

Abstract: A memory array includes a plurality of memory cells, each of which receives a bit line, a first word line, and a second word line. Each memory cell includes a cell selection circuit, which allows the memory cell to be selected. Each memory cell also includes a two-terminal switching device, which includes first and second conductive terminals in electrical communication with a nanotube article. The memory array also includes a memory operation circuit, which is operably coupled to the bit line, the first word line, and the second word line of each cell. The circuit can select the cell by activating an appropriate line, and can apply appropriate electrical stimuli to an appropriate line to reprogrammably change the relative resistance of the nanotube article between the first and second terminals. The relative resistance corresponds to an informational state of the memory cell.

Abstract: Provided are solar cells and methods of forming the same. The solar cell includes an anti-reflection layer on a substrate, a first electrode on the anti-reflection layer, a photo-electro conversion layer on the first electrode, and a second electrode on the photo-electro conversion layer.

Abstract: A semiconductor nanocrystal includes a core including a first semiconductor material and an overcoating including a second semiconductor material. A monodisperse population of the nanocrystals emits blue light over a narrow range of wavelengths with a high quantum efficiency.

Abstract: In accordance with aspects of the invention, a method of forming a metal-insulator-metal stack is provided. The method includes forming a first conducting layer, forming a resistivity-switching carbon-based material above the first conducting layer, and forming a second conducting layer above the carbon-based material, wherein the carbon-based material has a thickness of not more than ten atomic layers. Other aspects are also described.

Abstract: A device is provided by use of a helical substituted polyacetylene. The device comprises a structure comprised of a helical substituted polyacetylene having a helical main chain, and a pair of electrodes for applying a voltage or electric current to the structure, wherein the molecule of the helical substituted polyacetylene has a length larger than the distance between the pair of the electrodes.

Abstract: An organic electroluminescence element having a cathode as a top electrode, and excelling in luminance efficiency, drive voltage, and operational life is provided. The organic electroluminescence element includes an anode over a substrate and a luminescent layer over the anode. The luminescent layer comprises an organic material. An electron injection layer is over the luminescent layer for injecting electrons into the luminescent layer. The electron injection layer is a metal including at least one of an alkaline metal and an alkaline earth metal. A fullerene layer is over the electron injection layer and includes fullerenes and at least one of an alkaline metal and an alkaline earth metal. The at least one of the alkaline metal and the alkaline earth metal included in the fullerene layer has a lower work function than a lowest unoccupied molecular orbit energy level of the fullerenes. A cathode is over the fullerene layer.

Abstract: Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may be a multi junction solar cell. The optoelectronic device may have a bi-layer electrical interconnect that is physically and electrically connected to sidewalls of the array of nanostructures. The optoelectronic device may be operated as a multi junction solar cell, wherein each junction is associated with one portion of the device. The bi-layer electrical interconnect allows current to pass from one portion to the next. Thus, the bi-layer electrical interconnect may serve as a replacement for a tunnel junction, which is used in some conventional multi junction solar cells.

Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer is disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited.

Abstract: A chlorine gas sensor system includes carbon nanotubes at least partially coated with a metal oxide deposited on a substrate, and a source of infra-red light positioned to illuminate at least a portion of the coated nanotubes.

Abstract: A component including a substrate, at least one layer including a color conversion material including quantum dots disposed over the substrate, and a layer including a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material including quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein.

Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In particular implementations, the novel photovoltaic structures can be fabricated using low cost and scalable processes, such as magnetron sputtering. In a particular implementation, a photovoltaic cell includes a photoactive conversion layer comprising one or more granular semiconductor and oxide layers with nanometer-size semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer can be a disposed between electrode layers. In some implementations, multiple semiconductor and oxide layers can be deposited. These so-called semiconductor and oxide layers absorb sun light and convert solar irradiance into electrical free energy.

Abstract: A method for realizing a nanometric circuit architecture includes: realizing plural active areas on a semiconductor substrate; realizing on the substrate a seed layer of a first material; realizing a mask-spacer of a second material on the seed layer in a region comprised between the active areas; realizing a mask overlapping the mask-spacer and extending in a substantially perpendicular direction thereto; selectively removing the seed layer exposed on the substrate; selectively removing the mask and the mask-spacer obtaining a seed-spacer comprising a linear portion extending in that region and a portion substantially orthogonal thereto; realizing by MSPT from the seed-spacer an insulating spacer reproducing at least part of the profile of the seed-spacer; realizing by MSPT a nano-wire of conductive material from the seed-spacer or insulating spacer, the nano-wire comprising a first portion at least partially extending in the region and a second portion contacting a respective active area.

Abstract: Embodiments in accordance with the present invention relate to packed-column nano-liquid chromatography (nano-LC) systems integrated on-chip, and methods for producing and using same. The microfabricated chip includes a column, flits/filters, an injector, and a detector, fabricated in a process compatible with those conventionally utilized to form integrated circuits. The column can be packed with supports for various different stationary phases to allow performance of different forms of nano-LC, including but not limited to reversed-phase, normal-phase, adsorption, size-exclusion, affinity, and ion chromatography. A cross-channel injector injects a nanolitre/picolitre-volume sample plug at the column inlet. An electrochemical/conductivity sensor integrated at the column outlet measures separation signals.

Abstract: Methods for using nanowire sensors are described. In one embodiment, the nanowire sensor may be field effect transistor having a nanowire and a functionalized control electrode. One method of using such a nanowire sensor includes exposing the functionalized control electrode to a test sample and an enhancing reagent. In another embodiment, the nanowire sensor may be a field effect transistor having a gate electrode and a functionalized nanowire. One method of using such a nanowire sensor includes exposing the functionalized nanowire to a test sample and an enhancing reagent. The use of an enhancing reagent increases the sensitivity of the nanowire sensor to a substance to be detected or quantified.

Abstract: A method for manufacturing a biosensor includes forming a silicon nanowire channel, etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the sec

Abstract: A semiconductor structure including an ordered array of parallel graphene nanoribbons located on a surface of a semiconductor substrate is provided using a deterministically assembled parallel set of nanowires as an etch mask. The deterministically assembled parallel set of nanowires is formed across a gap present in a patterned graphene layer utilizing an electric field assisted assembly process. A semiconductor device, such as a field effect transistor, can be formed on the ordered array of parallel graphene nanoribbons.

Abstract: Direct resistive heating is used to grow nanotubes out of carbon and other materials. A growth-initiated array of nanotubes is provided using a CVD or ion implantation process. These processes use indirect heating to heat the catalysts to initiate growth. Once growth is initiated, an electrical source is connected between the substrate and a plate above the nanotubes to source electrical current through and resistively heat the nanotubes and their catalysts. A material source supplies the heated catalysts with carbon or another material to continue growth of the array of nanotubes. Once direct heating has commenced, the source of indirect heating can be removed or at least reduced. Because direct resistive heating is more efficient than indirect heating the total power consumption is reduced significantly.

Abstract: The inventive method for forming nano-dimensional clusters consists in introducing a solution containing a cluster-forming material into nano-pores of natural or artificial origin contained in a substrate material and in subsequently exposing said solution to a laser radiation pulse in such a way that a low-temperature plasma producing a gaseous medium in the domain of the existence thereof, wherein a cluster material is returned to a pure material by the crystallization thereof on a liquid substrate while the plasma is cooling, occurs, thereby forming mono-crystal quantum dots spliced with the substrate material. Said method makes it possible to form two- or three-dimensional cluster lattices and clusters spliced with each other from different materials. The invention also makes it possible to produce wires from different materials in the substrate nano-cavities and the quantum dots from the solution micro-drops distributed through an organic material applied to a glass.

Abstract: An electrical circuit structure employing graphene as a charge carrier transport layer. The structure includes a plurality of graphene layers. Electrical contact is made with one of the layer of the plurality of graphene layers, so that charge carriers travel only through that one layer. By constructing the active graphene layer within or on a plurality of graphene layers, the active graphene layer maintains the necessary planarity and crystalline integrity to ensure that the high charge carrier mobility properties of the active graphene layer remain intact.

Abstract: Techniques are provided for fabricating memory with metal nanodots as charge-storing elements. In an example approach, metal salt ions are added to a core of a copolymer solution. A metal salt reduction causes the metal atoms to aggregate in the core, forming a metal nanodot. The copolymer solution is applied to a gate oxide on a substrate using spin coating or dip coating. Due to the copolymer configuration, the nanodots are held in a uniform 2D grid on the gate oxide. The polymers are selected to provide a desired nanodot size and spacing between nanodots. A polymer cure and removal process leaves the nanodots on the gate oxide. In a configuration using a control gate over a high-k dielectric floating gate which includes the nanodots, the control gates may be separated by etching while the floating gate dielectric extends uninterrupted since the nanodots are electrically isolated from one another.

Abstract: A laser diode having nano patterns is disposed on a substrate. A first conductive-type clad layer is disposed on the substrate, and a second conductive-type clad layer is disposed on the first conductive-type clad layer. An active layer is interposed between the first conductive-type clad layer and the second conductive-type clad layer. Column-shaped nano patterns are arranged at a surface of the second conductive-type clad layer to form a laser diode such as a distributed feedback laser diode.

Abstract: Light-emitting diodes, and methods of manufacturing the light-emitting diode, are provided wherein a plurality of nano-rods may be formed on a reflection electrode. The plurality of nano-rods extend perpendicularly from an upper surface of the reflection electrode. Each of the nano-rods includes a first region doped with a first type dopant, a second region doped with a second type dopant that is an opposite type to the first type dopant, and an active region between the first region and the second region. A transparent insulating layer may be formed between the plurality of nano-rods. A transparent electrode may be formed on the plurality of nano-rods and the transparent insulating layer.

Abstract: A semiconductor device according to one embodiment includes: a substrate; a wiring provided above the substrate and including a graphene nanoribbon layer comprising a plurality of laminated graphene nanoribbon sheets; and a wiring connecting member penetrating at least one of the plurality of graphene nanoribbon sheets for connecting the wiring and a conductive member above or below the wiring.

Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer may be disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited.

Abstract: A method, apparatus and system with a semiconductor package including a microchimney or thermosiphon using carbon nanotubes to modify the effective thermal conductivity of an integrated circuit die.

Abstract: In accordance with aspects of the invention, a method of forming a memory cell is provided, the method including forming a steering element above a substrate, and forming a memory element coupled to the steering element, wherein the memory element comprises a carbon-based material having a thickness of not more than ten atomic layers. The memory element may be formed by repeatedly performing the following steps: forming a layer of a carbon-based material, the layer having a thickness of about one monolayer, and subjecting the layer of carbon-based material to a thermal anneal. Other aspects are also described.

Abstract: A semiconductor structure having: an electrically and thermally conductive layer disposed on one surface of the semiconductor structure; an electrically and thermally conductive heat sink; a electrically and thermally conductive carrier layer; a plurality of electrically and thermally nano-tubes, a first portion of the plurality of nano-tubes having proximal ends disposed on a first surface of the carrier layer and a second portion of the plurality of nano-tubes having proximal ends disposed on an opposite surface of the carrier layer; and a plurality of electrically and thermally conductive heat conductive tips disposed on distal ends of the plurality of nano-tubes, the plurality of heat conductive tips on the first portion of the plurality of nano-tubes being attached to the conductive layer, the plurality of heat conductive tips on the second portion of the plurality of nano-tubes being attached to the heat sink.

Abstract: Disclosed herein are an apparatus and a method for separating molecules on the basis of size and or structure, and to a method of making the apparatus. Generally, the separation method includes passing a fluid comprising particles having different effective molecular diameters through a plurality of open, nanoscale channels disposed in surfaces of substrates. The method also includes obtaining a plurality of fractions of the passed fluid such that each of the fractions includes a major portion containing particles having similar size and shape and substantially free of particles having larger size and shape. The apparatus includes first and second substrates each of which has a surface containing a plurality of open, nanoscale channels disposed therein. The surfaces are bonded together such that each of the channels of the first substrate is in fluid communication with at least two of the channels of the second substrate and is misaligned relative to the channels of the second substrate.

Abstract: A nano-resonator including a beam having a composite structure may include a silicon carbide beam and/or a metal conductor. The metal conductor may be vapor-deposited on the silicon carbide beam. The metal conductor may have a density lower than a density of the silicon carbide beam.

Abstract: A light-emitting device includes an n-type silicon thin film (2), a silicon thin film (3), and a p-type silicon thin film (4). The silicon thin film (3) is formed on the n-type silicon thin film (2) and the p-type silicon thin film (4) is formed on the silicon thin film (3). The n-type silicon thin film (2), the silicon thin film (3), and the p-type silicon thin film (4) form a pin junction. The n-type silicon thin film (2) includes a plurality of quantum dots (21) composed of n-type Si. The silicon thin film (3) includes a plurality of quantum dots (31) composed of p-type Si. The p-type silicon thin film (4) includes a plurality of quantum dots (41) composed of p-type Si. Electrons are injected from the n-type silicon thin film (2) side and holes are injected from the p-type silicon thin film (4) side, whereby light is emitted at a silicon nitride film (3).

Abstract: A photovoltaic device that includes a substrate and a nanowall structure disposed on the substrate surface. The device also includes at least one layer conformally deposited over the nanowall structure. The conformal layer(s) is at least a portion of a photoactive junction. A method for making a photovoltaic device includes generating a nanowall structure on a substrate surface and conformally depositing at least one layer over the nanowall structure thereby forming at least one photoactive junction. A solar panel includes at least one photovoltaic device based on a nanowall structure. The solar panel isolates such devices from its surrounding atmospheric environment and permits the generation of electrical power. Optoelectronic device may also incorporate a photovoltaic device based on a nanowall structure.

Abstract: A photovoltaic device includes a substrate having at least two surfaces and a multilayered film disposed on at least a portion of at least one surface of the substrate. Elongated nanostructures are disposed on the multilayered film. The device incorporates a top layer of the multilayered film contacting the elongated nanostructures that is a tunnel junction. The device has at least one layer deposited over the elongated nanostructures defining a portion of a photoactive junction. A solar panel includes at least one photovoltaic device. The solar panel isolates each such devices from its surrounding atmospheric environment and permits the generation of electrical power.

Abstract: A nanotube device and a method of depositing nanotubes for device fabrication are disclosed. The method relates to electrophoretic deposition of nanotubes, and allows a control of the number of deposited nanotubes and positioning within a defined region.

Abstract: A method for making a thin film transistor, the method comprising the steps of: (a) providing a carbon nanotube array and an insulating substrate; (b) pulling out a carbon nanotube film from the carbon nanotube array by using a tool; (c) placing at least one carbon nanotube film on a surface of the insulating substrate, to form a carbon nanotube layer thereon; (d) forming a source electrode and a drain electrode; wherein the source electrode and the drain electrode being spaced therebetween, and electrically connected to the carbon nanotube layer; and (e) covering the carbon nanotube layer with an insulating layer, and a gate electrode being located on the insulating layer.

Abstract: A method for generating power from water by pressure retarded osmosis comprises the steps of: pumping sea water into a first pathway which is at least partially defined by a first face of a membrane, said membrane comprising a distinct electrically conductive porous nanotube layer; pumping fresh water into a second pathway which is at least partially defined by a second face of the membrane to generate an osmotic pressure gradient across the membrane; and harnessing the power generated from the osmotic pressure gradient.

Abstract: A molecular sensor includes a membrane layer having parallel pores extending through the membrane layer and incorporating therein probe molecules that bind with corresponding target molecules when present in the pores, electrodes, and an ionic solution in contact with the electrodes and the pores, wherein the electrodes are energized to induce an electrical current in the solution through the pores, wherein the electrical current induces an electrical parameter in the electrodes that is indicative of a through-pore electrical impedance of the pores, wherein the through-pore electrical impedance is increased when there is probe-to-target molecule binding in the pores relative to when there is an absence of such binding.

Abstract: Disclosed herein are an apparatus and a method for separating molecules on the basis of size and or structure, and to a method of making the apparatus. Generally, the separation method includes passing a fluid comprising particles having different effective molecular diameters through a plurality of open, nanoscale channels disposed in surfaces of substrates. The method also includes obtaining a plurality of fractions of the passed fluid such that each of the fractions includes a major portion containing particles having similar size and shape and substantially free of particles having larger size and shape. The apparatus includes first and second substrates each of which has a surface containing a plurality of open, nanoscale channels disposed therein. The surfaces are bonded together such that each of the channels of the first substrate is in fluid communication with at least two of the channels of the second substrate and is misaligned relative to the channels of the second substrate.

Abstract: Disclosed herein is an article comprising a substrate; an interlayer comprising aluminum nitride, gallium nitride, boron nitride, indium nitride or a solid solution of aluminum nitride, gallium nitride, boron nitride and/or indium nitride; the interlayer being directly disposed upon the substrate and in contact with the substrate; where the interlayer comprises a columnar film and/or nanorods and/or nanotubes; and a group-III nitride layer disposed upon the interlayer; where the group-III nitride layer completely covers a surface of the interlayer that is opposed to a surface in contact with the substrate; the group-III nitride layer being free from cracks.