Abstract: Systems and methods are described for parallel macromolecular delivery and biochemical/electrochemical interface to whole cells employing carbon nanostructures including nanofibers and nanotubes. A method includes providing a first material on at least a first portion of a first surface of a first tip of a first elongated carbon nanostructure; providing a second material on at least a second portion of a second surface of a second tip of a second elongated carbon nanostructure, the second elongated carbon nanostructure coupled to, and substantially parallel to, the first elongated carbon nanostructure; and penetrating a boundary of a biological sample with at least one member selected from the group consisting of the first tip and the second tip.

Abstract: Disclosed are methods of lithography using a tip array having a plurality of pens attached to a backing layer, where the tips can comprise a metal, metalloid, and/or semi-conducting material, and the backing layer can comprise an elastomeric polymer. The tip array can be used to perform a lithography process in which the tips are coated with an ink (e.g., a patterning composition) that is deposited onto a substrate upon contact of the tip with the substrate surface. The tips can be easily leveled onto a substrate and the leveling can be monitored optically by a change in light reflection of the backing layer and/or near the vicinity of the tips upon contact of the tip to the substrate surface.

Abstract: Various embodiments of the present invention are directed to negative refractive index-based holograms that can be electronically controlled and dynamically reconfigured to generate one or more color three-dimensional holographic images. In one aspect, a hologram comprises a phase-control layer having a plurality of phase modulation elements. The phase-modulation elements are configured with a negative effective refractive index and selectively transmit wavelengths associated with one of three primary color wavelength. The hologram also includes an intensity-control layer including a plurality of intensity-control elements. One or more color three-dimensional images can be produced by electronically addressing the phase-modulation elements and intensity-control elements in order to phase shift and control the intensity of light transmitted through the hologram. A method for generating a color holographic image using the hologram is also provided, as is a system for generating a color holographic image.

Abstract: A method of producing sharp tips useful for scanning probe microscopy and related applications is described. The tips are formed by deposition into a mold(s) formed in a sacrificial crystalline semiconductor substrate with an exposed {311} surface which has been etched with a crystallographic etchant to form a 3-sided, trihedral or trigonal pyramidal mold(s) or indentation(s). The resultant tips, when released from the sacrificial mold material or substrate, are typically formed in the shape of a trigonal pyramid or a tetrahedron. Another embodiment involves starting with a {100} surface and the formation of two tips on opposite ends of a wedge at trigonal or trihedral points of the wedge. These tips are less susceptible to the tip wedge effect typical of tips formed using known methods.

Abstract: A nanoelectromechanical device is provided. The nanoelectromechanical device includes a nanotube, a first contact, and a first actuator. The nanotube includes a first end, the first end supported by a first structure, a second end opposite the first end, and a first portion. The first actuator is configured to apply a first force to the nanotube, the first force causing the nanotube to buckle such that the first portion couples to the first contact.

Abstract: Described herein is the analysis of nanomechanical characteristics of cells. In particular, changes in certain local nanomechanical characteristics of ex vivo human cells can correlate with presence of a human disease, such as cancer, as well as a particular stage of progression of the disease. Also, for human patients that are administered with a therapeutic agent, changes in local nanomechanical characteristics of ex vivo cells collected from the patients can correlate with effectiveness of the therapeutic agent in terms of impeding or reversing progression of the disease. By exploiting this correlation, systems and related methods can be advantageously implemented for disease state detection and therapeutic agent selection and monitoring.

Abstract: Detection of miniscule amounts of nucleic acid is accomplished via binding of target nucleic acid to probe material, composed of nucleic acid, which is bound to a sensor configured to sense mass. The sensor is prepared by immobilizing a probe material to a surface of the sensor, wherein the probe material is known to bind to the target nucleic acid. The prepared sensor is exposed to the target nucleic acid. The target nucleic acid binds to the probe material. The mass accumulated on the sensor reflects the amount of target nucleic acid bound to the probe material.

Abstract: Semiconductor devices are formed with a nano-electro-mechanical system (NEMS) logic or memory on a bulk substrate. Embodiments include forming source/drain regions directly on a bulk substrate, forming a fin connecting the source/drain regions, forming two gates, one on each side of the fin, the two gates being insulated from the bulk substrate, and forming a substrate gate in the bulk substrate. The fin is separated from each of the two gates and the substrate gate with an air gap.

Abstract: A micro heater includes a first electrode, a second electrode, a first carbon nanotube, and a second carbon nanotube. The first carbon nanotube extends from the first electrode. The second carbon nanotube branches from the second electrode. The first carbon nanotube and the second carbon nanotube intersect with each other to define a node therebetween.

Abstract: A method of screening one or more cells is described; the method includes: (i) providing one or more cells to a nanoelectromechanical system (NEMS) force sensor; (ii) applying at least one reagent to the one or more cells; and (iii) observing a response of the one or more cells to the reagent with the force sensor, thereby screening the one or more cells.

Abstract: According to one embodiment, a switch device includes a first switching unit provided on a base substance. The first switching unit includes a first supporting electrode, a first beam, a first contact point electrode, a first floating conductive layer and a first control electrode. The first supporting electrode is fixed to the base. The first beam includes a first holding part and a first movable part. The first holding part is fixed to the base. The first movable part has one end connected to the first holding part. The first contact point electrode is fixed to the base and faces the first movable part. The first floating conductive layer is fixed to the first movable part via a first insulating part and stores a charge. The first control electrode is fixed to the base and faces the first floating conductive layer.

Abstract: A piezoelectric nanodevice may include a first substrate having formed thereon a multiple number of nanorods and a second substrate having formed thereon a multiple number of piezoelectric nanorods. The first substrate associates with the second substrate to generate friction between the nanorods of the first substrate and the piezoelectric nanorods of the second substrate.

Abstract: A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.

Abstract: A nanodevice, a transistor including the nanodevice, a method of manufacturing the nanodevice, and a method of manufacturing the transistor including the nanodevice are provided. The nanodevice includes a substrate, a mask layer located on the substrate and having at least one opening, and a nanotube formed on the substrate through the opening along an edge of the opening. The nanotube extends through the opening in a direction substantially perpendicular to a surface of the substrate.

Abstract: A configuration bit array including a hybrid electromechanical and semiconductor memory cell, and circuitry for addressing and controlling read, write, and erase accesses of the memory.

Abstract: Microstructures, microdevices and related methods are disclosed.

Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting portion, a first transparent conductive layer, and a second transparent conductive layer. The light emitting portion is provided between the first and second semiconductor layers. The second semiconductor layer is disposed between the first transparent conductive layer and the light emitting portion. The first transparent conductive layer includes oxygen. The second transparent conductive layer is provided between the second semiconductor layer and the first transparent conductive layer. The second transparent conductive layer has a refractive index higher than a refractive index of the first transparent conductive layer, and includes oxygen at a concentration higher than a concentration of oxygen included in the first transparent conductive layer.

Abstract: An electrical storage device includes high surface area fibers (e.g., shaped fibers and/or microfibers) coated with carbon (graphite, expanded graphite, activated carbon, carbon black, carbon nanofibers, CNT, or graphite coated CNT), electrolyte, and/or electrode active material (e.g., lead oxide) in electrodes. The electrodes are used to form electrical storage devices such as electrochemical batteries, electrochemical double layer capacitors, and asymmetrical capacitors.

Abstract: A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.

Abstract: An apparatus including a resonator electrode and a second electrode separated from the resonator electrode by a gap having a size that facilitates electron transfer across the gap, wherein the resonator electrode is a resonator electrode mounted for oscillatory motion relative to the second electrode that results in a size of the gap between the resonator electrode and the second electrode being time variable; a feedback circuit configured to convey an electron transfer signal dependent upon electron transfer across the gap as a feedback signal; and a drive electrode adjacent the resonator electrode configured to receive a feedback signal from a feedback circuit configured to provide a time-varying feedback signal dependent upon electron transfer across a gap.

Abstract: A monolithic micro or nano electromechanical transducer device includes a pair of substrates (20, 25) respectively mounting one or more elongate electrical conductors (40) and resilient solid state hinge means (30, 32) integral with and linking the substrates to relatively locate the substrates so that respective elongate electrical conductors (40) of the substrates are opposed at a spacing that permits a detectable quantum tunnelling current between the conductors when a suitable electrical potential difference is applied across the conductors. The solid state hinge means permits relative parallel translation of the substrates transverse to the elongate electrical conductors.

Abstract: An RF device is provided. The RF device includes a vibratile carbon nanotube having a nanotube natural frequency (f0), a negative electrode fixed to a first end of the carbon nanotube, a vibratile tuning electrode having a variable resonance frequency and facing a second end of the carbon nanotube, and a positive electrode electrically connected to a first end of the tuning electrode. A second end of the tuning electrode is adjacent to the second end of the carbon nanotube, and the carbon nanotube vibrates at a carrier frequency according to an external electromagnetic wave having the carrier frequency, and the tuning electrode having variable resonance frequency characteristics amplifies distance variation between the second end of the carbon nanotube and the second end of the tuning electrode to increase an electron emission sensitivity according to field emission.

Abstract: An apparatus for detecting electromagnetic wave includes an electromagnetic wave sensor, a first electrode and a second electrode spaced from each other and electrically connected to the electromagnetic wave sensor, and a measuring device electrically connected to the first electrode and the second electrode. The electromagnetic wave sensor includes a carbon nanotube structure. The carbon nanotube structure includes a plurality of carbon nanotubes extending along a same direction from the first electrode to the second electrode. The measuring device is capable of measuring resistance of the carbon nanotube structure.

Abstract: Apparatus and system, as well as fabrication methods therefor, may include a thermal intermediate structure comprised of a plurality of carbon nanotubes some of which have organic moieties attached thereto to tether the nanotubes to at least one of a die and a heat sink. The organic moieties include thiol linkers and amide linkers.

Abstract: Embodiments relate to a semiconductor device and a method for fabricating the same. According to embodiments, a semiconductor device may include a metal film spaced from a semiconductor substrate at a predetermined interval and in which a plurality of etching holes are formed. A bottom metal pattern disposed on and/or over a space between the semiconductor substrate and metal film and top metal pattern formed on and/or over the bottom metal pattern may be provided. A pillar may be formed on and/or over the semiconductor substrate and may support one side of a low surface of the bottom metal pattern. A pad may be formed on and/or over the semiconductor substrate, and an air layer corresponding to the bottom metal pattern may be inserted therein. According to embodiments, a pyro-electric switch transistor using a bi-metal with different coefficients of thermal expansion may be provided.

Abstract: A configuration bit array including a hybrid electromechanical and semiconductor memory cell, and circuitry for addressing and controlling read, write, and erase accesses of the memory.

Abstract: A configuration bit array including a hybrid electromechanical and semiconductor memory cell, and circuitry for addressing and controlling read, write, and erase accesses of the memory.

Abstract: A device comprising a nanotube configured as a resonator, a source electrode, a gate electrode, a drain electrode and at least one impeding element, wherein the at least one impeding element is configured to minimize energy loss due to a contact resistance between at least the source electrode and the nanotube.

Abstract: Provided are a wire structure and a semiconductor device having the wire structure. The wire structure includes a first wire that has a first region having a width of several to tens of nanometers and a second region having a width wider than that of the first region.

Abstract: Described herein is the analysis of nanomechanical characteristics of cells. In particular, changes in certain local nanomechanical characteristics of ex vivo human cells can correlate with presence of a human disease, such as cancer, as well as a particular stage of progression of the disease. Also, for human patients that are administered with a therapeutic agent, changes in local nanomechanical characteristics of ex vivo cells collected from the patients can correlate with effectiveness of the therapeutic agent in terms of impeding or reversing progression of the disease. By exploiting this correlation, systems and related methods can be advantageously implemented for disease state detection and therapeutic agent selection and monitoring.

Abstract: A configuration bit array including a hybrid electromechanical and semiconductor memory cell, and circuitry for addressing and controlling read, write, and erase accesses of the memory.

Abstract: The present invention improves mechanical strength of a micro-electro-mechanical device (MEMS) having a movable portion to improve reliability. In a micro-electro-mechanical device (MEMS) having a movable portion, a portion which has been a hollow portion in the case of a conventional structure is filled with a filler material. As the filler material, a block copolymer that is highly flexible is used, for example. By filling the hollow portion, mechanical strength improves. Besides, warpage of an upper portion of a structure body in the manufacture process is prevented, whereby yield improves. A micro-electro-mechanical device thus manufactured is highly reliable.

Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.

Abstract: The present invention is directed to structures and methods of fabricating electromechanical memory cells having nanotube crossbar elements. Such memory cells include a substrate having transistor with a contact that electrically contacts with the transistor. A first support layer is formed over the substrate with an opening that defines a lower chamber above the electrical contact. A nanotube crossbar element is arranged to span the lower chamber. A second support layer is formed with an opening that defines a top chamber above the lower chamber, the top chamber including an extension region that extends beyond an edge of the lower chamber to expose a portion of the top surface of the first support layer. A roof layer covers the top of the top chamber and includes an aperture that exposes a portion of the extension region of the top chamber and includes a plug that extends into the aperture in the roof layer to seal the top and bottom chambers.

Abstract: A thin-film composition of nanocrystal molybdenum in an amorphous metallic matrix may be formed by co-sputtering Mo with aluminum or nickel. NEMS cantilevers may be formed from the film. The films exhibit high nanoindentation hardness and a reduction in roughness and intrinsic stress, while maintaining resistivity in the metallic range.

Abstract: Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A gate structure is disposed over an insulator over the channel region and has a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the gate structure and the terminal corresponding to the gate structure. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the gate structure and its corresponding terminal.

Abstract: According to one aspect of the invention, a method of constructing an electronic assembly is provided. A layer of metal is formed on a backside of a semiconductor wafer having integrated formed thereon. Then, a porous layer is formed on the metal layer. A barrier layer of the porous layer at the bottom of the pores is thinned down. Then, a catalyst is deposited at the bottom of the pores. Carbon nanotubes are then grown in the pores. Another layer of metal is then formed over the porous layer and the carbon nanotubes. The semiconductor wafer is then separated into microelectronic dies. The dies are bonded to a semiconductor substrate, a heat spreader is placed on top of the die, and a semiconductor package resulting from such assembly is sealed. A thermal interface is formed on the top of the heat spreader. Then a heat sink is placed on top of the thermal interface.

Abstract: An apparatus includes an electromagnetic signal device, a medium, and a sound wave generator. The sound wave generator includes a carbon nanotube structure. The carbon nanotube structure includes one or more drawn carbon nanotube films. The electromagnetic signal device transmits an electromagnetic signal to the carbon nanotube structure. The carbon nanotube structure converts the electromagnetic signal into heat. The heat transfers to the medium and causes a thermoacoustic effect.

Abstract: An apparatus, the apparatus includes an electromagnetic signal device; a medium; and a sound wave generator. The sound wave generator includes a carbon nanotube structure. The carbon nanotube structure includes one or more carbon nanotube films. Each carbon nanotube film includes a plurality of carbon nanotubes substantially parallel to each other and joined side by side via van der Waals attractive force. The electromagnetic signal device transmits an electromagnetic signal to the carbon nanotube structure. The carbon nanotube structure converts the electromagnetic signal into heat. The heat transfers to the medium causing a thermoacoustic effect.

Abstract: An on/off reversible adhesive mechanism, and method for fabricating same. The adhesive mechanism is a hierarchical system comprised of a micro-scale compliant surface having one or more nano-structures thereon, wherein the compliant surface is moved by applying a magnetic field either to engage the nano-structures with an adhering surface or to remove the nano-structures from the adhering surface.

Abstract: The present invention is directed to structures and methods of fabricating electromechanical memory cells having nanotube crossbar elements. Such memory cells include a substrate having transistor with a contact that electrically contacts with the transistor. A first support layer is formed over the substrate with an opening that defines a lower chamber above the electrical contact. A nanotube crossbar element is arranged to span the lower chamber. A second support layer is formed with an opening that defines a top chamber above the lower chamber, the top chamber including an extension region that extends beyond an edge of the lower chamber to expose a portion of the top surface of the first support layer. A roof layer covers the top of the top chamber and includes an aperture that exposes a portion of the extension region of the top chamber and includes a plug that extends into the aperture in the roof layer to seal the top and bottom chambers.

Abstract: A resonant transistor includes a substrate, a source and a drain formed on the substrate, an input electrode and a carbon nanotube gate. A gap is formed between the source and the drain. The input electrode is formed on the substrate. The carbon nanotube gate is clamped on one end by a contact electrode and positioned, preferably cantilevered, over the gap and over the input electrode.

Abstract: A method is described that can be used in electrodes for electrochemical devices and includes disposing a precious metal on a top surface of a corrosion-resistant metal substrate. The precious metal can be thermally sprayed onto the surface of the corrosion-resistant metal substrate to produce multiple metal splats. The thermal spraying can be based on a salt solution or on a metal particle suspension. A separate bonding process can be used after the metal splats are deposited to enhance the adhesion of the metal splats to the corrosion-resistant metal substrate. The surface area associated with the splats of the precious metal is less than the surface area associated with the top surface of the corrosion-resistant metal substrate. The thermal spraying rate can be controlled to achieve a desired ratio of the surface area of the metal splats to the surface area of the corrosion-resistant metal substrate.

Abstract: A solid-state semiconductor device operable without loss arising from junction-to junction (e.g., source-to-drain) leakage current includes a movable MEMS switch or relay armature structure carrying at least one electrical contact corresponding to a semiconductor device junction. The switch or relay armature is movable from a first position corresponding to a first switch state to a second position corresponding to a second switch state. The semiconductor device also includes an actuation circuit configured to act on the cantilever switch, changing the switch from a first contact-conducting state to a second non-contact-conducting state by physically separating the switch's electrical contact from the semiconductor device junction, thus eliminating the conductive path for leakage current losses.

Abstract: Provided is an electromechanical switch and a method of manufacturing the same. The electromechanical switch includes an elastic conductive layer that moves by the application of an electric field, wherein the elastic conductive layer includes at least one layer of graphene.

Abstract: Nanoelectromechanical transistors (NEMTs) and methods of forming the same are disclosed. In one embodiment, an NEMT may include a substrate including a gate, a source region and a drain region; an electromechanically deflectable nanotube member; and a channel member electrically insulatively coupled to the nanotube member so as to be aligned with the source region and the drain region, wherein the electromechanical deflection of the nanotube member is controllable, in response to an electrical potential applied to the gate and the nanotube member, between an off state and an on state, the on state placing the channel member in electrical connection with the source region and the drain region to form a current path.

Abstract: A semiconductor device includes beam portions and piezoelectric portions. Each of the beam portions is formed to extend in a first direction with one end fixed at a substrate by use of a supporting member and warped by residual stress with the supporting member set as a starting point. Each of the piezoelectric portions is connected to the other end of the corresponding beam portion and formed to extend in a second direction intersecting with the first direction and moves parallel to the substrate in a first direction and in a direction opposite to the first direction by application of bias voltage.

Abstract: Nanoelectromechanical systems are disclosed that utilize vertically grown or placed nanometer-scale beams. The beams may be configured and arranged for use in a variety of applications, such as batteries, generators, transistors, switching assemblies, and sensors. In some generator applications, nanometer-scale beams may be fixed to a base and grown to a desired height. The beams may produce an electric potential as the beams vibrate, and may provide the electric potential to an electrical contact located at a suitable height above the base. In other embodiments, vertical beams may be grown or placed on side-by-side traces, and an electrical connection may be formed between the side-by-side traces when beams on separate traces vibrate and contact one another.

Abstract: An electromechanical switching device employs a first nanoscale pillar shuttling charge between opposed charged electrodes. Motion of the first pillar is coupled to a second set of pillars providing controlled charge transfer between a second isolated set of electrodes. Standard logic elements may be constructed using this switching device.