Abstract: A nanomechanical device includes a nanostructure, such as a MWNT, located between two electrodes. The device switches from an OFF state to an ON state by extension of at least one inner shell of the nanostructure relative to at least one outer shell of the nanostructure upon an application of a voltage between the electrodes. If desired, the device may also switch from the ON state to the OFF state upon an application of a gate voltage to a gate electrode located adjacent to the nanostructure.

Abstract: Nanoelectromechanical (NEM) memory cells are provided by anchoring a conductive nanometer-scale beam (e.g., a nanotube) to a base and allowing a portion of the beam to move. A charge containment layer is provided in the vicinity of this free-moving portion. To read if a charge is stored in the charge containment layer, a charge is formed on the beam. If a charge is stored then forces between the charged beam and the charge containment layer will displace the free-moving portion of the beam. This movement may be sensed by a sense contact. Alternatively, the beam may contact a sense contact at an ambient frequency when no charge is stored. Changing the amount of charge stored may change this contact rate. The contract rate may be sensed to determine the amount of stored charge.

Abstract: A method for forming a microstructures is described. The method comprises: depositing a seed material on a substrate; growing a nanotube from the seed material; depositing microstructure material on the substrate to embed the nanotube in the microstructure material; and, detaching the substrate to release the microstructure. The resulting mictostructure comprises a body portion and a nanotube embedded in the body portion.

Abstract: Nanoelectromechanical switch systems (NEMSS) that are structured around the mechanical manipulation of nanotubes are provided. Such NEMSS can realize the functionality of, for example, automatic switches, adjustable diodes, amplifiers, inverters, variable resistors, pulse position modulators (PPMs), and transistors. In one embodiment, a nanotube is anchored at one end to a base member. The nanotube is also coupled to a voltage source. This voltage source creates an electric charge at the tip of the free-moving-end of the nanotube that is representative of the polarity and intensity of the voltage source. The free-moving end of this nanotube can be electrically controlled by applying an electric charge to a nearby charge member layer that is either of the same (repelling) or opposite (attracting) polarity of the nanotube.

Abstract: A random access memory cell includes first and second nanotube switching elements and an electronic memory with cross-coupled first and second inverters. Each nanotube switching element includes a nanotube channel element having at least one electrically conductive nanotube, and a set electrode and a release electrode disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between a channel electrode and an output node. Input nodes of the first and second inverters are coupled to the set electrodes and the output nodes of the first and second nanotube switching elements. The cell can operate as a normal electronic memory, or in a shadow memory or store mode to transfer the electronic memory state to the nanotube switching elements. The device may later be operated in a recall mode to transfer the state of the nanotube switching elements to the electronic memory.