With Specified Packing Density Patents (Class 977/764)
-
Patent number: 8975205Abstract: Embodiments of the present disclosure include structures, photocatalytic structures, and photoelectrochemical structures, methods of making these structures, methods of making photocatalysis, methods of splitting H2O, methods of splitting CO2, and the like.Type: GrantFiled: November 10, 2009Date of Patent: March 10, 2015Assignee: University of Georgia Research Foundation, Inc.Inventors: Wilson Smith, Yiping Zhao
-
Patent number: 8956637Abstract: This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrates and medical devices. In one particular embodiment, methods for enhancing cellular functions on a surface of a medical device implant are disclosed which generally comprise providing a medical device implant comprising a plurality of nanofibers (e.g., nanowires) thereon and exposing the medical device implant to cells such as osteoblasts.Type: GrantFiled: April 28, 2011Date of Patent: February 17, 2015Assignee: Nanosys, Inc.Inventors: Robert S. Dubrow, Lawrence A. Bock, R. Hugh Daniels, Veeral D. Hardev, Chunming Niu, Vijendra Sahi
-
Patent number: 8932940Abstract: Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures.Type: GrantFiled: October 28, 2009Date of Patent: January 13, 2015Assignee: The Regents of the University of CaliforniaInventors: Deli Wang, Cesare Soci, Xinyu Bao, Wei Wei, Yi Jing, Ke Sun
-
Publication number: 20140209475Abstract: There is provided a nanohair structure with the nanowires exposed on a nanotemplate; the method thereof; and a three-dimensional nanostructure-based sensor with ultra-sensitivity and greatly increased three-dimensional surface-to-volume ratio which immobilizes bio-nanoparticles to the nanohair structure and arranges antibodies to the nano surface with the controlled orientation by physical interaction.Type: ApplicationFiled: February 25, 2014Publication date: July 31, 2014Applicant: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATIONInventors: Young Keun KIM, Jee-Won LEE, Jin-Seung PARK, Moon Kyu CHO, Eun Jung LEE
-
Patent number: 8628692Abstract: Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A spin-coatable liquid for formation of a nanotube film includes a liquid medium containing a controlled concentration of purified nanotubes, wherein the controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity, and wherein the spin-coatable liquid comprises less than 1×1018 atoms/cm3 of metal impurities. The spin-coatable liquid is substantially free of particle impurities having a diameter of greater than about 500 nm.Type: GrantFiled: May 25, 2012Date of Patent: January 14, 2014Assignee: Nantero Inc.Inventors: Rahul Sen, Ramesh Sivarajan, Thomas Rueckes, Brent M. Segal
-
Patent number: 8629422Abstract: The method utilizes a conducting trench base with non-conducting trench walls to corral charged particles precisely into the trenches. The nanoparticles are close packed in the channels and highly ordered. This approach utilizes the charge on the particles to selectively deposit them within the trenches, as all nanoparticles in solution can be charged, and this can be extended to any nanoparticle system beyond gold. Also, this method results in the layer-by-layer growth of the gold nanoparticles. Therefore the depth of the nanoparticle layers within the trenches is controllable. This allows the possibility of heterolayered structures of different nanoparticle layers. Further this method ensures that assembly occurs to fill the void space available provided the back-contacting electrode is more conducting than the trench walls. This allows nanoparticle assemblies to be corralled into any lithographically defined shape, which makes this approach highly adaptable to a range of applications.Type: GrantFiled: November 5, 2009Date of Patent: January 14, 2014Assignee: University of LimerickInventors: Kevin M. Ryan, Shafaat Ahmed
-
Patent number: 8623779Abstract: In one embodiment, a catalyst assembly includes a substrate including a substrate base and a number of substrate hairs extending longitudinally from the substrate base, the substrate base including a metal M, the number of substrate hairs including an oxide of the metal M; and a catalyst film contacting at least a portion of the substrate.Type: GrantFiled: January 23, 2012Date of Patent: January 7, 2014Assignee: Ford Global Technologies, LLCInventor: Alireza Pezhman Shirvanian
-
Patent number: 8470409Abstract: A method of forming a nanowire structure is disclosed. The method comprises applying on a surface of carrier liquid a layer of a liquid composition which comprises a surfactant and a plurality of nanostructures each having a core and a shell, and heating at least one of the carrier liquid and the liquid composition to a temperature selected such that the nanostructures are segregated from the surfactant and assemble into a nanowire structure on the surface.Type: GrantFiled: April 8, 2010Date of Patent: June 25, 2013Assignee: Ben Gurion University of the Negev Research and Development AuthorityInventors: Roman Volinsky, Raz Jelinek
-
Patent number: 8450717Abstract: A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.Type: GrantFiled: December 31, 2007Date of Patent: May 28, 2013Assignee: QuNano ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson
-
Patent number: 8206505Abstract: The inventive method for forming nano-dimensional clusters consists in introducing a solution containing a cluster-forming material into nano-pores of natural or artificial origin contained in a substrate material and in subsequently exposing said solution to a laser radiation pulse in such a way that a low-temperature plasma producing a gaseous medium in the domain of the existence thereof, wherein a cluster material is returned to a pure material by the crystallization thereof on a liquid substrate while the plasma is cooling, occurs, thereby forming mono-crystal quantum dots spliced with the substrate material. Said method makes it possible to form two- or three-dimensional cluster lattices and clusters spliced with each other from different materials. The invention also makes it possible to produce wires from different materials in the substrate nano-cavities and the quantum dots from the solution micro-drops distributed through an organic material applied to a glass.Type: GrantFiled: November 29, 2005Date of Patent: June 26, 2012Inventors: Sergei Nikolaevich Maximovsky, Grigory Avramovich Radutsky
-
Patent number: 8187502Abstract: Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A spin-coatable liquid for formation of a nanotube film includes a liquid medium containing a controlled concentration of purified nanotubes, wherein the controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity, and wherein the spin-coatable liquid comprises less than 1×1018 atoms/cm3 of metal impurities. The spin-coatable liquid is substantially free of particle impurities having a diameter of greater than about 500 nm.Type: GrantFiled: July 25, 2007Date of Patent: May 29, 2012Assignee: Nantero Inc.Inventors: Rahul Sen, Ramesh Sivarajan, Thomas Rueckes, Brent M. Segal
-
Patent number: 8147722Abstract: Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A spin-coatable liquid for formation of a nanotube film includes a liquid medium containing a controlled concentration of purified nanotubes, wherein the controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity, and wherein the spin-coatable liquid comprises less than 1×1018 atoms/cm3 of metal impurities. The spin-coatable liquid is substantially free of particle impurities having a diameter of greater than about 500 nm.Type: GrantFiled: July 25, 2007Date of Patent: April 3, 2012Assignee: Nantero Inc.Inventors: Rahul Sen, Ramesh Sivarajan, Thomas Rueckes, Brent M. Segal
-
Patent number: 8034315Abstract: Some embodiments include devices that contain bundles of CNTs. An undulating topography extends over the CNTs and within spaces between the CNTs. A global maximum lateral width is defined as the greatest lateral width of any of the spaces. A material is directly over the CNTs, with the material being a plurality of particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width. Some embodiments include methods in which a plurality of crossed carbon nanotubes are formed over a semiconductor substrate. The CNTs form an undulating upper topography extending across the CNTs and within spaces between the CNTs. A global maximum lateral width is defined as the greatest lateral width of any of the spaces. A material is deposited over the CNTs, with the material being deposited as particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width.Type: GrantFiled: September 22, 2008Date of Patent: October 11, 2011Assignee: Micron Technology, Inc.Inventors: Nishant Sinha, Gurtej S. Sandhu, Eugene Marsh, Neil Greeley, John Smythe
-
Patent number: 7776425Abstract: A non-vacuum-based, non-collodial chemistry-based method of synthesizing metal nanoparticles and nanoparticle-nanostructured material composites obtained by that method. An embodiment of the method of this invention for fabricating a nanoparticle-nanostructured material composite and synthesizing nanoparticles includes preparing a nanostructured/nanotextured material, and, contacting the nanostructured/nanotextured material with a solution. Nanoparticles are synthesized on the nanostructured/nanotextured material as a result of the contact. The method of the present invention can be utilized to fabricate SPR and SERS substrates for sensing and detection. Additional systems based on this approach (e.g., surface plasmon resonance absorption and alloying sensors and nanocatalysts) are described.Type: GrantFiled: January 21, 2004Date of Patent: August 17, 2010Assignee: The Penn State Research FoundationInventors: Ali Kaan Kalkan, Stephen J. Fonash
-
Patent number: 7771694Abstract: A crimped carbon fiber having a multilayer structure comprising a hollow structure in the inside, with the inner layer part having a carbon structure containing a herringbone structure and the outer layer part having a carbon structure differing from the carbon structure of the inner layer part. A method for producing a crimped carbon fiber, comprising contacting a carbon source and/or a catalyst source with a sulfur source in a heating zone to produce a vapor grown carbon fiber, wherein the ratio of the molar number of sulfur atom in the sulfur source to the molar number of the catalyst metal atom is 2.0 or more.Type: GrantFiled: August 26, 2004Date of Patent: August 10, 2010Assignee: Showa Denko K.K.Inventors: Eiji Kambara, Katsuyuki Tsuji
-
Patent number: 7714351Abstract: The invention provides a nanowire light emitting device and a manufacturing method thereof. In the light emitting device, first and second conductivity type clad layers are formed and an active layer is interposed therebetween. At least one of the first and second conductivity type clad layers and the active layer is a semiconductor nanowire layer obtained by preparing a layer of a mixture composed of a semiconductor nanowire and an organic binder and removing the organic binder therefrom.Type: GrantFiled: August 25, 2006Date of Patent: May 11, 2010Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Won Ha Moon, Dong Woohn Kim, Jong Pa Hong
-
Patent number: 7692952Abstract: Methods for obtaining codes to be implemented in coding nanoscale wires are described. The methods show how to code a reduced number of nanoscale wires through the use of rotation group codes. The methods further show how to generate different code permutations through random misalignment and how to promote uniform code probability selection.Type: GrantFiled: August 24, 2004Date of Patent: April 6, 2010Assignee: California Institute of TechnologyInventor: André DeHon
-
Patent number: 7622314Abstract: A method of making a carbon nanotube structure includes forming a plurality of carbon nanotubes and contacting the carbon nanotubes with a polymer. A solid composition is formed from the carbon nanotubes and polymer and then shaped. For example, the solid composition can be shaped into an elongated structure such as a filament, wire, rope, cable, and the like. In at least some instances, at least some, or all, of the polymer is removed from the solid composition after it is shaped.Type: GrantFiled: May 5, 2006Date of Patent: November 24, 2009Assignee: Brother International CorporationInventor: Kangning Liang
-
Patent number: 7608902Abstract: A nanowire composite and a method of preparing the nanowire composite comprise a template having a plurality of hollow channels, nanowires formed within the respective channels of the template, and a functional element formed by removing a portion of the template so that one or more of the nanowires formed within the portion of the template are exposed. Since the nanowire composite can be prepared in a simple manner at low costs and can be miniaturized, the nanowire composite finds application in resonators and a variety of sensors.Type: GrantFiled: May 26, 2006Date of Patent: October 27, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Soon Jae Kwon, Byoung Lyong Choi, Eun Kyung Lee, Kyung Sang Cho, In Taek Han, Jae Ho Lee, Seong Jae Choi
-
Publication number: 20090228131Abstract: Systems, devices, and methods for designing and/or manufacturing transparent conductors. A system is operable to evaluate optical and electrical manufacturing criteria for a transparent conductor. The system includes a database including stored reference transparent conductor data, and a controller subsystem configured to compare input acceptance manufacturing criteria for a transparent conductor to stored reference transparent conductor data.Type: ApplicationFiled: October 11, 2007Publication date: September 10, 2009Applicant: CAMBRIOS TECHNOLOGIES CORPORATIONInventors: Jeffrey Wolk, Haixia Dai, Xina Quan, Michael A. Spaid
-
Patent number: 7579077Abstract: This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates, as well as methods and uses for such substrates.Type: GrantFiled: May 5, 2004Date of Patent: August 25, 2009Assignee: Nanosys, Inc.Inventors: Robert Dubrow, Robert Hugh Daniels
-
Patent number: 7569847Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).Type: GrantFiled: January 20, 2005Date of Patent: August 4, 2009Assignee: The Regents of the University of CaliforniaInventors: Arun Majumdar, Ali Shakouri, Timothy D. Sands, Peidong Yang, Samuel S. Mao, Richard E. Russo, Henning Feick, Eicke R. Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
-
Patent number: 7545010Abstract: The invention provides a nanostructure including nanowires having very small diameters and integrated at a high density, and capable of being applied to still further high-functional devices. The invention provides a structure including a substrate or substrate having an underlayer, and a structure formed on the substrate or substrate having an underlayer, wherein the structure includes a columnar first part (part) and a second part (part) formed to surround the first part, and the second part comprises two or more types of materials capable of forming eutectic crystals, one type of the materials is a semiconductor material, and the height of the first part from the substrate is greater than the height of the second part from the substrate.Type: GrantFiled: August 6, 2004Date of Patent: June 9, 2009Assignee: Canon Kabushiki KaishaInventors: Shigeru Ichihara, Kaoru Konakahara, Tohru Den, Kazuhiko Fukutani
-
Patent number: 7345307Abstract: The present invention is directed to thin film transistors using nanowires (or other nanostructures such as nanoribbons, nanotubes and the like) incorporated in and/or disposed proximal to conductive polymer layer(s), and production scalable methods to produce such transistors. In particular, a composite material comprising a conductive polymeric material such as polyaniline (PANI) or polypyrrole (PPY) and one or more nanowires incorporated therein is disclosed.Type: GrantFiled: September 22, 2005Date of Patent: March 18, 2008Assignee: Nanosys, Inc.Inventors: Yaoling Pan, Francisco Leon, David P. Stumbo
-
Patent number: 7307271Abstract: A nano-colonnade structure-and methods of fabrication and interconnection thereof utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a semiconductor layer to another horizontal surface of another layer to connect the layers. The nano-colonnade structure includes a first layer having the (111) horizontal surface; a second layer having the other horizontal surface; an insulator support between the first layer and the second layer that separates the first layer from the second layer. A portion of the second layer overhangs the insulator support, such that the horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer. The structure further includes a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface, such that the nanowire column connects the first layer to the second layer.Type: GrantFiled: November 5, 2004Date of Patent: December 11, 2007Assignee: Hewlett-Packard Development Company, L.P.Inventors: M. Saif Islam, Philip J. Kuekes, Shih-Yuan Wang, Duncan R. Stewart, Shashank Sharma
-
Patent number: 7132677Abstract: An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN nanorod are subsequently formed in a longitudinal direction by inserting the InGaN quantum well into a p-n junction interface of the p-n junction GaN nanorod. In addition, a plurality of such GaN nanorods are arranged in an array so as to provide an LED having much greater brightness and higher light emission efficiency than a conventional laminated-film GaN LED.Type: GrantFiled: February 13, 2004Date of Patent: November 7, 2006Assignee: Dongguk UniversityInventors: Hwa-Mok Kim, Tae-Won Kang, Kwan-Soo Chung