Abstract: Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures.

Abstract: Semiconductor nanostrings, mats containing semiconductor nanostrings, and devices and modules, such as, solar energy generating modules, including semiconductor nanostrings or mats containing semiconductor nanostrings are described herein. Methods for making multi-layer nanostrings and mats and other devices including multi-layer nanostrings are also described.

Abstract: A nanowire device includes a nanowire having differently functionalized segments. Each of the segments is configured to interact with a species to modulate the conductance of a segment. The nanowire is grown from a single catalyst and the segments include a first segment at a non-linear angle from a second segment.

Abstract: The invention provides a high voltage-resistant lateral double-diffused transistor. The lateral double-diffused MOS transistor includes a channel region, a gate dielectric, a gate region, a source region, a drain region, a source end extension region and a drain end S-shaped drifting region, wherein the channel region has a lateral cylindrical silicon nanowire structure, on which a layer of gate dielectric is uniformly covered, the gate region is on the gate dielectric, the gate region and the gate dielectric completely surround the channel region, the source end extension region lies between the source region and the channel region, the drain end S-shaped drifting region lies between the drain region and the channel region, the plan view of the drain end S-shaped drifting region is in the form of single or multiple S-shaped structure(s), and an insulating material with a relative dielectric constant of 1-4 is filled within the S-shaped structure(s).

Abstract: A device is provided by use of a helical substituted polyacetylene. The device comprises a structure comprised of a helical substituted polyacetylene having a helical main chain, and a pair of electrodes for applying a voltage or electric current to the structure, wherein the molecule of the helical substituted polyacetylene has a length larger than the distance between the pair of the electrodes.

Abstract: A nanofiber 10 made of a water soluble polymer, having a cavity 13, and containing an oily component 14 in the cavity 13. The nanofiber 10 preferably has a small-diametered portion 12 and a large-diametered portion 11. The cavity 13 is preferably in the large-diametered portion 11. The cavity 13 is also preferably in both the large-diametered portion 11 and the small-diametered portion 12, with the cavity 13 in the large-diametered portion 11 and the cavity 13 in the small-diametered portion 12 being interconnected.

Abstract: In exemplary implementations of this invention, hydrothermal synthesis of zinc oxide nanowires is morphologically controlled. Metal complex ions are used to suppress growth in a face-selective manner, by electrostatic crystal growth inhibition. This permits the aspect ratio (height/diameter) of the nanowires to be dynamically tuned over a wide range, from needle-like nanowires that are efficient field emitters to flattened nanowires with a platelet-like shape. The nanowire synthesis is all inorganic and occurs at low temperatures (e.g., <=60° C.). The growth inhibition may be predictively modeled, using speciation plots and treating non-zinc complex ions as ligands. Microfluidic channels may be used for the synthesis, with different solutions flowing down different channels, permitting nanowires with different properties to be synthesized in parallel.

Abstract: A photosensitive device (100), the photosensitive device (100) comprising a substrate (101) and a plurality of vertically aligned nanowire diodes (102 to 105) provided on and/or in the substrate (101).

Abstract: Techniques for silicide, germanide or germanosilicide formation in extremely small structures are provided. In one aspect, a method for forming a silicide, germanide or germanosilicide in a three-dimensional silicon, germanium or silicon germanium structure having extremely small dimensions is provided. The method includes the following steps. At least one element is implanted into the structure. At least one metal is deposited onto the structure. The structure is annealed to intersperse the metal within the silicon, germanium or silicon germanium to form the silicide, germanide or germanosilicide wherein the implanted element serves to prevent morphological degradation of the silicide, germanide or germanosilicide. The implanted element can include at least one of carbon, fluorine and silicon.

Abstract: The inventive method for forming nano-dimensional clusters consists in introducing a solution containing a cluster-forming material into nano-pores of natural or artificial origin contained in a substrate material and in subsequently exposing said solution to a laser radiation pulse in such a way that a low-temperature plasma producing a gaseous medium in the domain of the existence thereof, wherein a cluster material is returned to a pure material by the crystallization thereof on a liquid substrate while the plasma is cooling, occurs, thereby forming mono-crystal quantum dots spliced with the substrate material. Said method makes it possible to form two- or three-dimensional cluster lattices and clusters spliced with each other from different materials. The invention also makes it possible to produce wires from different materials in the substrate nano-cavities and the quantum dots from the solution micro-drops distributed through an organic material applied to a glass.

Abstract: The present invention provides phthalocyanine nanowires having a minor diameter of 100 nm or less and a ratio (length/minor diameter) of length to minor diameter of 10 or more, an ink composition characterized by containing, as essential components, the phthalocyanine nanowires and an organic solvent, a film including the phthalocyanine nanowires, and an electronic element including a film. Since by using an ink composition containing the phthalocyanine nanowires of the present invention a phthalocyanine film can be formed by a wet process such as coating or printing, a break-proof, lightweight, low-cost electronic element can be provided on a flexible plastic substrate.

Abstract: Dynamically reconfigurable holograms with electronically erasable programmable intermediate layers are disclosed. An example apparatus includes first nanowires, each of the first nanowires having protuberances along a length thereof. The example apparatus also includes second nanowires arranged approximately perpendicular to the first nanowires, the protuberances of the first nanowires being approximately parallel to corresponding ones of the second nanowires. In addition, a layer is disposed between the first and second nanowires. The layer is to control refractive indices at nanowire intersections at intersecting ones of the first and second nanowires.

Abstract: The object of the present invention is carbon nanofibers mainly characterized by their high specific volume of mesopores, their high gas adsorption capacity and presenting a graphitic hollow structure. A second object of this invention is a procedure for obtaining such carbon nanofibers, which makes use of a metallic nickel catalyst and specific process furnace parameters that combined with the chemical composition of the furnace atmosphere and the fluidodynamic conditions of the gas stream inside the furnace, result in a faster growth of the carbon nanofibers and also in a higher quality of the carbon nanofibers obtained.

Abstract: A memory system having electromechanical memory cells and decoders is disclosed. A decoder circuit selects at least one of the memory cells of an array of such cells. Each cell in the array is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. The decoder circuit is constructed of crossbar junctions at least one element of each junction being a nanotube or a nanotube ribbon.

Abstract: Methods, apparatuses, systems, and devices relating to fabricating one or more nanowires are disclosed. One method for fabricating a nanowire includes: selecting a particular wavelength of electromagnetic radiation for absorption for a nanowire; determining a diameter corresponding to the particular wavelength; and fabricating a nanowire having the determined diameter. According to another embodiment, one or more nanowires may be fabricated in an array, each having the same or different determined diameters. An image sensor and method of imaging using such an array are also disclosed.

Abstract: Some embodiments include devices that contain bundles of CNTs. An undulating topography extends over the CNTs and within spaces between the CNTs. A global maximum lateral width is defined as the greatest lateral width of any of the spaces. A material is directly over the CNTs, with the material being a plurality of particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width. Some embodiments include methods in which a plurality of crossed carbon nanotubes are formed over a semiconductor substrate. The CNTs form an undulating upper topography extending across the CNTs and within spaces between the CNTs. A global maximum lateral width is defined as the greatest lateral width of any of the spaces. A material is deposited over the CNTs, with the material being deposited as particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width.

Abstract: Provided are a wire structure and a semiconductor device having the wire structure. The wire structure includes a first wire that has a first region having a width of several to tens of nanometers and a second region having a width wider than that of the first region.

Abstract: The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

Abstract: Various embodiments of the present invention are directed to dynamically and electronically reconfigurable optical devices that can be operated as a lens or prism for incident beams of electromagnetic radiation. The optical devices include a phase-modulation layer (1501) disposed between first and second nanowire layers (1502,1503). Overlapping nanowires can be electronically addressed to implement a selected effective refractive index pattern of one or more regions (1510) of the phase-modulation layer, such that each region refracts a portion of an incident beam of electromagnetic radiation having a wavelength of interest in order to focus, diverge, or bend the incident beam.

Abstract: There are provided a semiconductor light emitting device using a phosphor film formed on a nanowire structure and a method of manufacturing the device, the device including: a substrate; a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer sequentially formed on the substrate; a plurality of nanowire structures formed on the light emitting structure and formed of a transparent material; and a phosphor film formed on at least an upper surface and a side surface of each of the plurality of nanowire structures.

Abstract: Various aspects of the present invention are directed to a nanowire configured to couple electromagnetic radiation to a selected guided wave and devices incorporating such nanowires. In one aspect of the present invention, a nanowire structure includes a substrate and at least one nanowire attached to the substrate. A diameter, composition, or both may vary generally periodically along a length of the at least one nanowire. A coating may cover at least part of a circumferential surface of the at least one nanowire. The nanowire structure may be incorporated in a device including at least one optical-to-electrical converter operable to convert a guided wave propagating along the length of the at least one nanowire, at least in part responsive to irradiation, to an electrical signal. Other aspects of the present invention are directed to methods of fabricating nanowires structured to support guided waves.

Abstract: Nanowire-based photodiodes are disclosed. The photodiodes include a first optical waveguide having a tapered first end, a second optical waveguide having a tapered second end, and at least one nanowire comprising at least one semiconductor material connecting the first and second ends in a bridging configuration. Methods of making the photodiodes are also disclosed.

Abstract: An electron emission device which can uniformly emit electrons and can be simply manufactured at a reduced cost, and a display apparatus having improved uniform brightness of pixels by using the electron emission device. In addition, a simple method of manufacturing the electron emission device. The electron emission device includes: a first substrate; a cathode electrode and an electron emission unit disposed on the first substrate; a gate electrode electrically insulated from the cathode electrode; an insulating layer disposed between the cathode electrode and the gate electrode to insulate the cathode electrode from the gate electrode; and an electron emission source including carbon nanotubes (CNTs) that contact the cathode electrode, wherein distances between the gate electrode and the tips of the CNTs are uniform.

Abstract: A novel, compact non-radioactive electron emitter is provided with a cylindrical shape and with an interior space (6), which forms a vacuum chamber. A substrate (7) forms the bottom of the arrangement with a plurality of field emitter tips (5) formed of carbon nanotubes in the interior space (6). The tips are fastened to the substrate. A layer structure forms the cover of the arrangement, having, from the outside towards the interior space (6), an electrode layer (13), which acts as a counterelectrode and is applied to a gas-impermeable and electron-permeable membrane (10). A substrate (11), which is left open in the form of a window (12) in the area above the field emitter tips (6), acts as a carrier substrate for the membrane (10) and the electrode layer (13). A circumferential wall (14) of the arrangement is formed by an electrically insulating material. The field emitter tips (5) and the electrode layer (13) are connected to a d.c.

Abstract: A sensor includes at least two electrodes, and at least one nanowire extending substantially laterally between the electrodes. The at least one nanowire has at least two segments with a junction or connection formed therebetween. A sensing material changeable between at least two states is positioned adjacent to the junction or connection, and adjacent to at least a portion of each of the segments.

Abstract: A nanowire device includes a nanowire formed between two surfaces, and a gap formed at a predetermined location in the nanowire.

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: Nanowire-based photodiodes are disclosed. The photodiodes include a first optical waveguide having a tapered first end, a second optical waveguide having a tapered second end, and at least one nanowire comprising at least one semiconductor material connecting the first and second ends in a bridging configuration. Methods of making the photodiodes are also disclosed.

Abstract: Various aspects of the present invention are directed to a nanowire configured to couple electromagnetic radiation to a selected guided wave and devices incorporating such nanowires. In one aspect of the present invention, a nanowire structure includes a substrate and at least one nanowire attached to the substrate. A diameter, composition, or both may vary generally periodically along a length of the at least one nanowire. A coating may cover at least part of a circumferential surface of the at least one nanowire. The nanowire structure may be incorporated in a device including at least one optical-to-electrical converter operable to convert a guided wave propagating along the length of the at least one nanowire, at least in part responsive to irradiation, to an electrical signal. Other aspects of the present invention are directed to methods of fabricating nanowires structured to support guided waves.

Abstract: Various methods for forming active electronic devices, such as field-effect transistors, and devices made using these methods are disclosed. Some of the methods include growing freestanding nano-, micro- and milli-scale semiconducting structures that are used for the active semiconducting channels of the active electronic devices. Others of the methods include forming strands of active electronic devices along a wire. Yet others of the methods utilize both of these concepts so that the active electronic devices on a particular strand include freestanding semiconducting structures.

Abstract: An integrated circuit device having vias having good resistance to migration causing the breaking of a wiring line, or an integrated circuit device having a wiring structure that is fined by breaking the limit of lithography technique is provided. The former device comprises a plurality of elements fabricated on a semiconductor substrate, wiring lines for making the elements and the integrated circuit device function, and vias for interconnecting wiring lines in separate layers, the via being formed of one or more cylindrical structures made up of carbon atoms. The latter device comprises a plurality of elements fabricated on a semiconductor substrate and wiring members for making the elements and the integrated circuit device function, at least part of the wiring members being formed of one or more cylindrical structures made up of carbon atoms.

Abstract: A method and structure for an integrated circuit comprising a first transistor and an embedded carbon nanotube field effect transistor (CNT FET) proximate to the first transistor, wherein the CNT FET is dimensioned smaller than the first transistor. The CNT FET is adapted to sense signals from the first transistor, wherein the signals comprise any of temperature, voltage, current, electric field, and magnetic field signals. Moreover, the CNT FET is adapted to measure stress and strain in the integrated circuit, wherein the stress and strain comprise any of mechanical and thermal stress and strain. Additionally, the CNT FET is adapted to detect defective circuits within the integrated circuit.

Abstract: An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN nanorod are subsequently formed in a longitudinal direction by inserting the InGaN quantum well into a p-n junction interface of the p-n junction GaN nanorod. In addition, a plurality of such GaN nanorods are arranged in an array so as to provide an LED having much greater brightness and higher light emission efficiency than a conventional laminated-film GaN LED.

Abstract: An integrated circuit device having vias having good resistance to migration causing the breaking of a wiring line, or an integrated circuit device having a wiring structure that is fined by breaking the limit of lithography technique is provided. The former device comprises a plurality of elements fabricated on a semiconductor substrate, wiring lines for making the elements and the integrated circuit device function, and vias for interconnecting wiring lines in separate layers, the via being formed of one or more cylindrical structures made up of carbon atoms. The latter device comprises a plurality of elements fabricated on a semiconductor substrate and wiring members for making the elements and the integrated circuit device function, at least part of the wiring members being formed of one or more cylindrical structures made up of carbon atoms.