Abstract: A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.

Abstract: A method for making a thin film transistor, the method comprising the steps of: (a) providing a carbon nanotube array and an insulating substrate; (b) pulling out a carbon nanotube film from the carbon nanotube array by using a tool; (c) placing at least one carbon nanotube film on a surface of the insulating substrate, to form a carbon nanotube layer thereon; (d) forming a source electrode and a drain electrode; wherein the source electrode and the drain electrode being spaced therebetween, and electrically connected to the carbon nanotube layer; and (e) covering the carbon nanotube layer with an insulating layer, and a gate electrode being located on the insulating layer.

Abstract: The present invention relates to novel composites that incorporate carbon nanospheres into a polymeric material. The polymeric material can be any polymer or polymerizable material compatible with graphitic materials. The carbon nanospheres are hollow, graphitic nanoparticles. The carbon nanospheres can be manufactured from a carbon precursor using templating catalytic nanoparticles. The unique size, shape, and electrical properties of the carbon nanospheres impart beneficial properties to the composites incorporating these nanomaterials.

Abstract: The present invention relates to novel composites that incorporate carbon nanospheres into a polymeric material. The polymeric material can be any polymer or polymerizable material compatible with graphitic materials. The carbon nanospheres are hollow, graphitic nanoparticles. The carbon nanospheres can be manufactured from a carbon precursor using templating catalytic nanoparticles. The unique size, shape, and electrical properties of the carbon nanospheres impart beneficial properties to the composites incorporating these nanomaterials.

Abstract: The present invention relates to a method for forming a layered structure with silicon nanocrystals. In one embodiment, the method comprises the steps of: (i) forming a first conductive layer on a substrate, (ii) forming a silicon-rich dielectric layer on the first conductive layer, and (iii) laser-annealing at least the silicon-rich dielectric layer to induce silicon-rich aggregation to form a plurality of silicon nanocrystals in the silicon-rich dielectric layer. The silicon-rich dielectric layer is one of a silicon-rich oxide film having a refractive index in the range of about 1.4 to 2.3, or a silicon-rich nitride film having a refractive index in the range of about 1.7 to 2.3. The layered structure with silicon nanocrystals in a silicon-rich dielectric layer is usable in a solar cell, a photodetector, a touch panel, a non-volatile memory device as storage node, and a liquid crystal display.

Abstract: The electrodes (7) and the contact zones (15) are structured in a film of a transparent conductive oxide (TCO), deposited on a transparent support (1) possibly coated with an intermediate film (3), while being separated by dielectric spaces (9) formed by nano fissures (11) obtained by UV radiation and passing through the TCO film. A protective film (13) can coat the electrodes (7) and the dielectric spaces (9).

Abstract: Provided are a nonvolatile memory device and methods of fabricating and operating the same. The memory device may include a substrate, at least a first and a second electrode on the substrate to be spaced a distance from each other, a conductive nanotube between the first and second electrodes and selectively coming into contact with the first electrode or the second electrode due to an electrostatic force and a support supporting the conductive nanotube. The memory device may be an erasable nonvolatile memory device which may retain information even when no power is supplied and may ensure relatively high operating speed and relatively high integration density. Because the memory device writes and erases information in units of bits, the memory device may be applied to a large number of fields.

Abstract: Field-effect transistors (FETs) having nanowire channels are provided. In one aspect, a FET is provided. The FET comprises a substrate having a silicon-on-insulator (SOI) layer which is divided into at least two sections electrically isolated from one another, one section included in a source region and the other section included in a drain region; a channel region connecting the source region and the drain region and including at least one nanowire; an epitaxial semiconductor material, grown from the SOI layer, covering the nanowire and attaching the nanowire to each section of the SOI layer; and a gate over the channel region.

Abstract: A non-vacuum-based, non-collodial chemistry-based method of synthesizing metal nanoparticles and nanoparticle-nanostructured material composites obtained by that method. An embodiment of the method of this invention for fabricating a nanoparticle-nanostructured material composite and synthesizing nanoparticles includes preparing a nanostructured/nanotextured material, and, contacting the nanostructured/nanotextured material with a solution. Nanoparticles are synthesized on the nanostructured/nanotextured material as a result of the contact. The method of the present invention can be utilized to fabricate SPR and SERS substrates for sensing and detection. Additional systems based on this approach (e.g., surface plasmon resonance absorption and alloying sensors and nanocatalysts) are described.

Abstract: There is provided a transparent conductor including conductive nanoparticles and at least one of (a) a fluorinated acid polymer and (b) a semiconductive polymer doped with a fluorinated acid polymer. The nanoparticles are carbon nanoparticles, metal nanoparticles, or combinations thereof. The carbon and metal nanoparticles are selected from nanotubes, fullerenes, and nanofibers. The acid polymers are fluorinated or highly fluorinated and have acidic groups including carboxylic acid groups, sulfonic acid groups, sulfonimide groups, phosphoric acid groups, phosphonic acid groups, and combinations thereof. The semiconductive polymers comprise homopolymers and copolymers derived from monomers selected from substituted and unsubstituted thiophenes, pyrroles, anilines, and cyclic heteroaromatics, and combinations of those. The compositions may be used in organic electronic devices (OLEDs).

Abstract: The present invention relates to colloidal photonic crystals using colloidal nanoparticles and a method for the preparation thereof, wherein by adding a viscoelastic material into a solution containing the colloidal nanoparticles when preparing the colloidal photonic crystals, a uniform volume contraction occurs due to the elasticity of the viscoelastic material even when a nonuniform volume contraction occurs while drying a dispersion medium in the colloidal solution. Thus, it is possible to prepare 2 or 3 dimensional colloidal photonic crystals of large scale with no defects in less time.

Abstract: A method of forming an optically active region on a silicon substrate includes the steps of epitaxially growing a silicon buffer layer on the silicon substrate and epitaxially growing a SiGe cladding layer having a plurality of arrays of quantum dots disposed therein, the quantum dots being formed from a compound semiconductor material having a lattice mismatch with the silicon buffer layer. The optically active region may be incorporated into devices such as light emitting diodes, laser diodes, and photodetectors.

Abstract: A method and device of nanostructured titania that is crack free. A method in accordance with the present invention comprises depositing a Ti film on a surface, depositing a masking layer on the Ti film, etching said masking layer to expose a limited region of the Ti film, the limited region being of an area less than a threshold area, oxidizing the exposed limited region of the Th.ucsbi film, and annealing the exposed limited region of the Ti film.

Abstract: Disclosed herein are heterostructure semiconductor nanowires. The heterostructure semiconductor nanowires comprise semiconductor nanocrystal seeds and semiconductor nanocrystal wires grown in a selected direction from the surface of the semiconductor nanocrystal seeds wherein the semiconductor nanocrystal seeds have a composition different from that of the semiconductor nanocrystal wires. Further disclosed is a method for producing the heterostructure semiconductor nanowires.

Abstract: A carbon nanotube reinforced metal nanocomposite material includes a continuous metal phase, and a plurality of carbon nanotubes dispersed in the continuous metal phase. The metal phase extends throughout substantially an entire thickness of the nanocomposite material. The nanotubes are preferably single wall nanotubes (SWNTs). Carbon nanotube reinforced metal nanocomposites according to the invention provide thermal conductivity and electrical conductivity which are generally significantly higher than the pure metal continuous phase material, mechanical strength is 2 to 3 times greater than that of the pure metal, and a tailorable coefficient of thermal expansion obtainable through changing the percentage of nanotubes in the nanocomposite.

Abstract: A method of manufacturing silicon nanowires is characterized in that silicon nanowires are formed and grown through a solid-liquid-solid process or a vapor-liquid-solid process using a porous glass template having nanopores doped with erbium or an erbium precursor. In addition, a device including silicon nanowires formed using the above exemplary method according to the present invention can be effectively applied to various devices, for example, electronic devices such as field effect transistors, sensors, photodetectors, light emitting diodes, laser diodes, etc.

Abstract: The invention includes fabrics that have been dyed or finished with a dye that contains a conductive mixture of conductive organic materials, inorganic materials, metals, metal oxides, carbon and carbon nanotubes or combinations or mixtures thereof. The dye is used to finish a fabric such that it is conductive. These fabrics are useful in shielding law enforcement personnel from energy weapons discharge and in providing an electrostatic medium for personnel that work with static sensitive products. The fabrics, when appropriately grounded, dissipate the emitted charge and transmit it to ground. Additionally, the apparel has high wear resistance and is both thermally and electrically conductive yet is comfortable to wear.

Abstract: A plurality of conductive pads (2) are formed on a mounting surface of a mounting board. Conductive pads (11) are formed on a principal surface of a semiconductor chip (10) at positions corresponding to the conductive pads of the mounting board, when the principal surface faces toward the mounting board. A plurality of conductive nanotubes (12) extend from the conductive pads of one of the mounting board and the semiconductor chip. A press mechanism (3) presses the semiconductor chip against the mounting board and restricts a position of the semiconductor chip on the mounting surface to mount the semiconductor chip on the mounting board, in a state that tips of the conductive nanotubes are in contact with the corresponding conductive pads not formed with the conductive nanotubes.

Abstract: A hydrogen gas sensor and/or switch fabricated from arrays nanowires composed of metal or metal alloys that have stable metal hydride phases. The sensor and/or switch response times make it quite suitable for measuring the concentration of hydrogen in a flowing gas stream. The sensor and/or switch preferably operates by measuring the resistance of several metal nanowires arrayed in parallel in the presence of hydrogen gas. The nanowires preferably comprise gaps or break junctions that can function as a switch that closes in the presence of hydrogen gas. Consequently, the conductivity of the nanowires of the sensor and/or switch increases in the presence of hydrogen.

Abstract: A nanowire composite and a method of preparing the nanowire composite comprise a template having a plurality of hollow channels, nanowires formed within the respective channels of the template, and a functional element formed by removing a portion of the template so that one or more of the nanowires formed within the portion of the template are exposed. Since the nanowire composite can be prepared in a simple manner at low costs and can be miniaturized, the nanowire composite finds application in resonators and a variety of sensors.

Abstract: A process for growth of boron-based nanostructures, such as nanotubes and nanowires, with a controlled diameter and with controlled chemical (such as composition, doping) as well as physical (such as electrical and superconducting) properties is described. The boron nanostructures are grown on a metal-substituted MCM-41 template with pores having a uniform pore diameter of less than approximately 4 nm, and can be doped with a Group Ia or Group IIa electron donor element during or after growth of the nanostructure. Preliminary data based on magnetic susceptibility measurements suggest that Mg-doped boron nanotubes have a superconducting transition temperature on the order of 100 K.

Abstract: A conductor for a flexible substrate, used for a flexible flat cable or disposed inside a flexible printed-circuit board, according to the present invention comprises: a base conductor made of Cu or Cu-alloy; a plating film made of Sn or Sn-alloy formed on a surface of the base conductor; and a surface oxide film formed on a surface of the plating film, in which the surface oxide film includes oxide of an element other than Sn or a mixture of Sn oxide and oxide of an element other than Sn.

Abstract: An anode structure for lithium batteries includes nanofeatured silicon particulates dispersed in a conductive network. The particulates are preferably made from metallurgical grade silicon powder via HF/HNO3 acid treatment, yielding crystallite sizes from about 1 to 20 nm and pore sizes from about 1 to 100 nm. Surfaces of the particles may be terminated with selected chemical species to further modify the anode performance characteristics. The conductive network is preferably a carbonaceous material or composite, but it may alternatively contain conductive ceramics such as TiN or B4C. The anode structure may further contain a current collector of copper or nickel mesh or foil.

Abstract: A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide film including a silicon oxynitride (SiOxNy) layer using nitrous oxide plasma and by forming a plurality of silicon nanocrystals in a nitride film by implanting a silicon nanocrystal on the nitride film by an ion implantation method, and a fabricating method thereof and a memory apparatus including the nonvolatile memory cell.

Abstract: A method for forming arrays of metal, alloy, semiconductor or magnetic clusters is described. The method comprises placing a scaffold on a substrate, the scaffold comprising molecules selected from the group consisting of polynucleotides, polypeptides, and perhaps combinations thereof. Polypeptides capable of forming ? helices are currently preferred for forming scaffolds. Arrays are then formed by contacting the scaffold with plural, monodispersed ligand-stabilized clusters. Each cluster, prior to contacting the scaffold, includes plural exchangeable ligands bonded thereto. If the clusters are metal clusters, then the metal preferably is selected from the group consisting of Ag, Au, Pt, Pd and mixtures thereof. A currently preferred metal is gold, and a currently preferred metal cluster is Au55 having a radius of from about 0.7 to about 1 nm. Compositions also are described, one use for which is in the formation of cluster arrays.

Abstract: The present invention is directed to systems and methods for nanowire growth. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial vertically oriented nanowire growth including providing a substrate material having one or more nucleating particles deposited thereon in a reaction chamber, introducing an etchant gas into the reaction chamber at a first temperature which gas aids in cleaning the surface of the substrate material, contacting the nucleating particles with at least a first precursor gas to initiate nanowire growth, and heating the alloy droplet to a second temperature, whereby nanowires are grown at the site of the nucleating particles. The etchant gas may also be introduced into the reaction chamber during growth of the wires to provide nanowires with low taper.

Abstract: Provided is a method for manufacturing a nano-gap electrode device comprising the steps of: forming a first electrode on a substrate; forming a spacer on a sidewall of the first electrode; forming a second electrode on an exposed substrate at a side of the spacer; and forming a nano-gap between the first electrode and the second electrode by removing the spacer, whereby it is possible to control the nano-gap position, width, shape, and etc., reproducibly, and manufacture a plurality of nano-gap electrode devices at the same time.

Abstract: A filtration device including a filtration medium having a plurality of nanofibers of diameters less than 1 micron formed into a fiber mat in the presence of an abruptly varying electric field. The filtration device includes a support attached to the filtration medium and having openings for fluid flow therethrough. A device for making a filter material. The device includes an electrospinning element configured to electrospin a plurality of fibers from a tip of the electrospinning element, a collector opposed to the electrospinning element configured to collect electrospun fibers on a surface of the collector, and an electric field modulation device configured to abruptly vary an electric field at the collector at least once during electrospinning of the fibers. A method for making a filter material.

Abstract: A method for forming arrays of metal, alloy, semiconductor or magnetic clusters is described. The method comprises placing a scaffold on a substrate, the scaffold comprising molecules selected from the group consisting of polynucleotides, polypeptides, and perhaps combinations thereof. Polypeptides capable of forming ? helices are currently preferred for forming scaffolds. Arrays are then formed by contacting the scaffold with plural, monodispersed ligand-stabilized clusters. Each cluster, prior to contacting the scaffold, includes plural exchangeable ligands bonded thereto. If the clusters are metal clusters, then the metal preferably is selected from the group consisting of Ag, Au, Pt, Pd and mixtures thereof. A currently preferred metal is gold, and a currently preferred metal cluster is Au55 having a radius of from about 0.7 to about 1 nm. Compositions also are described, one use for which is in the formation of cluster arrays.

Abstract: A method provides a simple yet reliable technique to assemble one-dimensional nanostructures selectively in a desired pattern for device applications. The method comprises forming a plurality of spaced apart conductive elements (12, 20) in a sequential pattern (26) on a substrate (17) and immersing the plurality of spaced apart conductive elements (12, 20) in a solution (23) comprising a plurality of one-dimensional nanostructures (22). A voltage is applied to one of the plurality of spaced apart conductive elements (12, 20) formed in the sequential pattern (26), thereby causing portions of the plurality of one-dimensional nanostructures (22) to migrate between adjacent conductive elements (12, 20) in sequence beginning with the one of the plurality of spaced apart conductive elements (12, 20) to which the voltage is applied.

Abstract: Provided is a chemical wet preparation method for Group 12-16 compound semiconductor nanocrystals. The method includes mixing one or more Group 12 metals or Group 12 precursors with a dispersing agent and a solvent followed by heating to obtain a Group 12 metal precursor solution; dissolving one or more Group 16 elements or Group 16 precursors in a coordinating solvent to obtain a Group 16 element precursor solution; and mixing the Group 12 metal precursors solution and the Group 16 element precursors solution to form a mixture, and then reacting the mixture to grow the semiconductor nanocrystals. The Group 12-16 compound semiconductor nanocrystals are stable and have high quantum efficiency and uniform sizes and shapes.

Abstract: Apparatus for an on-chip decoupling capacitor. The capacitor includes a bottom electrode that consist of nanostructures deposited over a planarized metal, a dielectric material deposited over the nanostructures, and a top electrode deposited over the dielectric material. The shape of the bottom electrode is tunable by modulating the diameter and/or the length of the nanostructures to produce an increase in capacitance without increasing the footprint of the on-chip decoupling capacitor.

Abstract: Methods, manufactures, machines and compositions are described for nanotransfer and nanoreplication using deterministically grown sacrificial nanotemplates. An apparatus includes a substrate and a nanoconduit material coupled to a surface of the substrate, where the substrate defines an aperture and the nanoconduit material defines a nanoconduit that is i) contiguous with the aperture and ii) aligned substantially non-parallel to a plane defined by the surface of the substrate. An apparatus includes a substrate and a nanoreplicant structure coupled to a surface of the substrate.

Abstract: Embodiments of the present invention are directed to methods for fabricating microscale-to-nanoscale interfaces. In numerous embodiments of the present invention, hybrid microscale/nanoscale crossbar multiplexers/demultiplexers provide for selection and control of individual nanowires through a set of microscale signal lines. In order to overcome the difficulty of aligning nanowires with submicroscale and microscale signal lines, at least a portion of the interconnections between nanowires and sub-microscale or microscale signal lines are randomly generated by one of various connection-fabrication methods. Addresses for individual nanowires, or groups of nanowires, can be discovered by testing the microscale-to-nanoscale interfaces.

Abstract: A thermal conductor is made of copper and carbon nanotubes powders that are compressed together and then cold rolled into sheets for aligning the carbon nanotubes for providing a composite matrix having a low coefficient of thermal expansion, high thermal conductivity, and high electrical conductivity, for preferred use as a conducting heat sink, such as a laser submount, for heat sinking dissipation and electrical grounding of high-power electrical components and circuits, such as a laser diode.

Abstract: A hydrogen gas sensor and/or switch fabricated from arrays nanowires composed of metal or metal alloys that have stable metal hydride phases. The sensor and/or switch response times make it quite suitable for measuring the concentration of hydrogen in a flowing gas stream. The sensor and/or switch preferably operates by measuring the resistance of several metal nanowires arrayed in parallel in the presence of hydrogen gas. The nanowires preferably comprise gaps or break junctions that can function as a switch that closes in the presence of hydrogen gas.

Abstract: An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN nanorod are subsequently formed in a longitudinal direction by inserting the InGaN quantum well into a p-n junction interface of the p-n junction GaN nanorod. In addition, a plurality of such GaN nanorods are arranged in an array so as to provide an LED having much greater brightness and higher light emission efficiency than a conventional laminated-film GaN LED.

Abstract: A semiconductor device with a superlattice and method of making same includes forming a layer of amorphous silicon over a substrate, and forming a layer of nanocrystals by laser thermal annealing the layer of amorphous silicon. A gate dielectric is formed between the layer of amorphous silicon and the substrate. A dielectric layer is formed on the layer of amorphous silicon. The steps of forming the layer of amorphous silicon and forming the dielectric layer can be repeated. The thickness of the dielectric layer is between about 25 to 40 angstroms, and the thickness of the amorphous silicon layer is between about 30 to 50 angstroms. The average diameter of the nanocrystals is less than 40 angstroms.