Group Iv Based Elements And Compounds (e.g., Cxsiygez, Porous Silicon, Etc.) Patents (Class 977/814)
  • Publication number: 20150061487
    Abstract: A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/?m is demonstrated in a macroscopic emitter array. The emitter is comprised of a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.
    Type: Application
    Filed: October 20, 2014
    Publication date: March 5, 2015
    Inventors: Fred Sharifi, MYUNG-GYU KANG, HENRI LEZEC
  • Patent number: 8962971
    Abstract: Disclosed is a laminated film having: (a) a substrate; and (b) a bonding layer of ethylene polymer on one major surface of the substrate wherein the bonding layer is placed directly on the substrate or there is a (c) primer layer between the substrate and bonding layer. Also disclosed is a solar module made of such a laminated polymer film.
    Type: Grant
    Filed: June 24, 2009
    Date of Patent: February 24, 2015
    Assignee: E I du Pont de Nemours and Company
    Inventors: Qiuju Wu, Ruofei Zhao, Shijie Ren, Bo Xu
  • Patent number: 8926904
    Abstract: An apparatus and method for performing analysis and identification of molecules have been presented. In one embodiment, a portable molecule analyzer includes a sample input/output connection to receive a sample, a nanopore-based sequencing chip to perform analysis on the sample substantially in real-time, and an output interface to output result of the analysis.
    Type: Grant
    Filed: May 10, 2010
    Date of Patent: January 6, 2015
    Inventor: Daniel Wai-Cheong So
  • Patent number: 8871322
    Abstract: Disclosed is a coating composition for coating polycarbonate substrates. The coating composition comprises (A) at least one radiation-curing binder, (B) nanoparticles, and (C) optionally at least one reactive diluent and/or optionally a solvent, and wherein the nanoparticles (B) comprise silicon dioxide nanoparticles , the silicon dioxide nanoparticles have a d50 of between 80 and 300 nm, and the silicon dioxide nanoparticles have a particle size distribution wherein less than 15% by weight of the particles have a size in the range of less than 80 nm, 75% to 95% by weight of the particles have a size in the range from 80 to 300 nm, 0% to 5% by weight of the particles have a size in the range from more than 300 to 1000 nm, and 0% to 5% by weight of the particles have a size in the range from more than 1000 nm to 10 000 nm.
    Type: Grant
    Filed: September 10, 2009
    Date of Patent: October 28, 2014
    Assignee: BASF Coatings GmbH
    Inventors: Matthijs Groenewolt, Jan-Bernd Kues, Stefanie Schroeder, Pedro Cavaleiro, Hans-Leo Karminski, Gunther Michael
  • Publication number: 20140287264
    Abstract: Provided is a nanostructure including ordered stacked sheets and processes for its preparation and use.
    Type: Application
    Filed: October 18, 2012
    Publication date: September 25, 2014
    Applicant: YEDA RESEARCH AND DEVELOPMENT CO. LTD.
    Inventors: Reshef Tenne, Gal Radovsky, Ronit Popovitz-Biro
  • Patent number: 8778401
    Abstract: The present invention encompasses formulations and methods for producing solid dispersions comprising mesoporous materials with poorly aqueous soluble active ingredients. The active ingredient is formed in the amorphous state and entrapped in the nanosized pores of the mesoporous excipients using a co-spray drying process. The pore walls of mesoporous channels stabilize the amorphous form of active ingredient against re-crystallization. The amorphous active ingredient entrapped in mesoporous channels exhibits good stability during extended storage under stress test conditions and possesses significantly enhanced dissolution rates.
    Type: Grant
    Filed: February 18, 2009
    Date of Patent: July 15, 2014
    Assignee: Agency for Science, Technology and Research
    Inventors: Shou-Cang Shen, Wai Kiong Ng, Leonard Chia
  • Patent number: 8771498
    Abstract: An electrochemical method for producing Si nanopowder, Si nanowires and/or Si nanotubes directly from compound SiX or a mixture containing a silicon compound SiX, the method comprises: providing an electrolysis cell having a cathode, an anode and an electrolyte, using the compound SiX or the mixture containing compound SiX as a cathode and immersing the cathode in an electrolyte comprising a metal compound molten salt, applying a potential between the cathode and the anode in the electrolysis cell, and forming one or more of Si nanopowder, Si nanowires and Si nanotubes on the cathode electrode. The method has advantages of: 1) shorter production processing, 2) inexpensive equipment, 3) convenient operation, 4) reduction of contaminate, 5) easily available feed materials, and 6) easy to achieve continuous production. This is a new field of using electrochemical method for producing one-dimensional Si nano material, and a new method of producing Si nanopowder, Si nanowires and Si nanotubes.
    Type: Grant
    Filed: May 2, 2011
    Date of Patent: July 8, 2014
    Assignee: General Research Institute for Nonferrous Metals
    Inventors: Shigang Lu, Juanyu Yang, Xiangjun Zhang, Surong Kan
  • Patent number: 8742400
    Abstract: A graphene switching device includes a first electrode and an insulating layer in first and second regions of the semiconductor substrate, respectively, a plurality of metal particles on a surface of the semiconductor substrate between the first and second regions, a graphene layer on the plurality of metal particles and extending on the insulating layer, a second electrode on the graphene layer in the second region and configured to face the insulating layer, a gate insulating layer configured to cover the graphene layer, and a gate electrode on the gate insulating layer. The semiconductor substrate forms an energy barrier between the graphene layer and the first electrode.
    Type: Grant
    Filed: April 12, 2013
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: David Seo, Sang-wook Kim, Seong-jun Park, Young-jun Yun, Yung-hee Yvette Lee, Chang-seung Lee
  • Publication number: 20140117292
    Abstract: A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSexS(1-x), wherein 0?x?1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.
    Type: Application
    Filed: September 27, 2013
    Publication date: May 1, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Shin Ae JUN, Eun Joo JANG, Soo Kyung KWON, Taek Hoon KIM, Won Joo LEE
  • Patent number: 8691672
    Abstract: A method is provided for consuming oxides in a silicon (Si) nanoparticle film. The method forms a colloidal solution film of Si nanoparticles overlying a substrate. The Si nanoparticle colloidal solution film is annealed at a high temperature in the presence of titanium (Ti). In response to the annealing, Si oxide is consumed in a resultant Si nanoparticle film. In one aspect, the consuming the Si oxide in the Si nanoparticle film includes forming Ti oxide in the Si nanoparticle film. Also in response to a low temperature annealing, solvents are evaporated in the colloidal solution film of Si nanoparticles. Si and Ti oxide molecules are sintered in the Si nanoparticle film in response to the high temperature annealing.
    Type: Grant
    Filed: March 28, 2012
    Date of Patent: April 8, 2014
    Assignee: Sharp Laboratories of America, Inc.
    Inventors: Themistokles Afentakis, Karen Yuri Nishimura
  • Patent number: 8658246
    Abstract: A seed substrate is placed to face a formation substrate, and then a gas containing silicon is introduced and chemical vapor deposition is performed. There is no particular limitation on a kind of a material used for the formation substrate as long as the material can withstand the temperature at which the reduced pressure chemical vapor deposition is performed. A group of silicon whiskers which does not include a seed atom can be grown directly on and in contact with the formation substrate. Further, the substrate provided with the group of whiskers can be applied to a solar cell, a lithium ion secondary battery, and the like, by utilizing surface characteristics of the group of whiskers.
    Type: Grant
    Filed: September 29, 2011
    Date of Patent: February 25, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshihiko Takeuchi, Makoto Ishikawa, Yuki Murakami
  • Publication number: 20140027808
    Abstract: A Si-based light emitting diode structure and a method for fabricating the Si-based light emitting diode structure are each predicated upon a multilayer material layer that comprises alternating, interposed and laminated sub-layers of: (1) a group IV nanocrystal material; and (2) an erbium or neodymium doped dielectric material. The light emitting diode structure is preferably laterally actuated to provide both efficient photoluminescence and electroluminescence. The group IV nanocrystal material may comprise a silicon nanocrystal material and the doped dielectric material may comprise an erbium doped silicon oxide material.
    Type: Application
    Filed: July 25, 2013
    Publication date: January 30, 2014
    Applicant: UNIVERSITY OF ROCHESTER
    Inventors: Karl S. Ni, Halina Krzyzanowska, Yijing Fu, Philippe M. Fauchet
  • Patent number: 8623237
    Abstract: The present invention describes a composition and a method for producing mesoporous silica materials with a chiral organization. In the method, a polymerizable inorganic monomer is reacted in the presence of nanocrystalline cellulose (NCC) to give a material of inorganic solid with cellulose nanocrystallites embedded in a chiral nematic organization. The NCC can be removed to give a stable porous structure that retains the chiral organization of the NCC template. The new materials may be obtained as iridescent free-standing films with high surface area. Through control of the reaction conditions, the color of the films can be varied across the entire visible spectrum. These are the first materials to combine mesoporosity with long-range chiral ordering that leads to photonic properties.
    Type: Grant
    Filed: March 31, 2011
    Date of Patent: January 7, 2014
    Assignees: University of British Columbia, FPInnovations
    Inventors: Mark John MacLachlan, Kevin Eric Shopsowitz, Wadood Yasser Hamad, Hao Qi
  • Patent number: 8617707
    Abstract: Disclosed herein are magic size nanoclusters comprising lead and one or more chalcogens. The disclosed magic size nanoclusters have both spectrally narrow fluorescence and ultra-high quantum efficiencies. Further disclosed herein is a method for preparing PbS, PbSe, and PbTe magic size nanoclusters. The yield of magic size nanoclusters can be increased by using anion sources enriched for secondary phosphines. The use of enriched secondary phosphine anion sources also increases the yield of quantum nanostructures.
    Type: Grant
    Filed: March 24, 2009
    Date of Patent: December 31, 2013
    Assignee: University of Rochester
    Inventors: Todd D. Krauss, Christopher Evans, Li Guo, Jeffrey J. Peterson
  • Patent number: 8530883
    Abstract: Light emitting devices comprise excitation sources arranged to excite quantum dots which fluoresce to emit light. In an embodiment, a device is manufactured by a process which involves applying an acoustic field is applied to a fluid containing quantum dots, to cause the quantum dots to accumulate at locations which are adjacent to excitation sources, and then initiating a phase transition of the fluid to trap the quantum dots in the locations adjacent to the excitation sources. The quantum dots are illuminated during the process and the resulting fluorescence is optically monitored to provide indicators of quantum dot distribution in the fluid. These indicators are used as feedback for controlling aspects of the process, such as initiating the phase transition.
    Type: Grant
    Filed: March 10, 2011
    Date of Patent: September 10, 2013
    Assignee: Light-Based Technologies Incorporated
    Inventors: Yohann Sulaiman, Richard MacKellar, Allan Brent York
  • Patent number: 8524365
    Abstract: A method of producing nanoparticles comprises effecting conversion of a nanoparticle precursor composition to the material of the nanoparticles. The precursor composition comprises a first precursor species containing a first ion to be incorporated into the growing nanoparticles and a separate second precursor species containing a second ion to be incorporated into the growing nanoparticles. The conversion is effected in the presence of a molecular cluster compound under conditions permitting seeding and growth of the nanoparticles.
    Type: Grant
    Filed: October 6, 2011
    Date of Patent: September 3, 2013
    Assignee: Nanoco Technologies Ltd.
    Inventors: Paul O'Brien, Nigel Pickett
  • Publication number: 20130209887
    Abstract: Disclosed is an anode for a lithium battery comprising a body of carbon, such as graphitic carbon, having a layer of a Group IV element or Group IV element-containing substance disposed upon its electrolyte contacting surface. Further disclosed is an anode comprising a body of carbon having an SEI layer formed thereupon by interaction of a layer of Group IV element or Group IV element-containing substance with an electrolyte material during the initial charging of the battery.
    Type: Application
    Filed: February 9, 2012
    Publication date: August 15, 2013
    Applicant: Ovonic Battery Company, Inc.
    Inventor: KWO YOUNG
  • Publication number: 20130189575
    Abstract: A porous silicon based material comprising porous crystalline elemental silicon formed by reducing silicon dioxide with a reducing metal in a heating process followed by acid etching is used to construct negative electrode used in lithium ion batteries. Gradual temperature heating ramp(s) with optional temperature steps can be used to perform the heating process. The porous silicon formed has a high surface area from about 10 m2/g to about 200 m2/g and is substantially free of carbon. The negative electrode formed can have a discharge specific capacity of at least 1800 mAh/g at rate of C/3 discharged from 1.5V to 0.005V against lithium with in some embodiments loading levels ranging from about 1.4 mg/cm2 to about 3.5 mg/cm2. In some embodiments, the porous silicon can be coated with a carbon coating or blended with carbon nanofibers or other conductive carbon material.
    Type: Application
    Filed: January 19, 2012
    Publication date: July 25, 2013
    Inventors: Yogesh Kumar Anguchamy, Charan Masarapu, Haixia Deng, Yongbong Han, Subramanian Venkatachalam, Sujeet Kumar, Herman A. Lopez
  • Publication number: 20130156832
    Abstract: Eudermic composition comprising at least one eudermically active principle, at least one vehicle for said active principle, and porous silica particles, wherein the active principle is contained in at least one pore of at least a first portion of such silica particles and in the vehicle.
    Type: Application
    Filed: July 12, 2011
    Publication date: June 20, 2013
    Applicant: Miso S.r.I.
    Inventors: Barbara Onida, Renato Silvio Mortera
  • Publication number: 20130094201
    Abstract: A heat dissipating structure of an LED circuit board includes an LED circuit board having a plurality of soldering points. The soldering points of the LED circuit board are covered by a coating layer including Nanoparticles and a bonding agent. The coating layer has the characteristics of high emitting rate, temperature resistance, and conductivity insulation. On the other hand, the coating layer can increase the contacting areas of the soldering points with the air to enlarge the heat dissipation area of the LED circuit board. The LED circuit board covered by the coating layer is placed in an LED lamp tube to provide good heat dissipation effect.
    Type: Application
    Filed: December 6, 2012
    Publication date: April 18, 2013
    Applicants: GOLDEN SUN NEWS TECHNIQUES CO., LTD., CPUMATE INC.
    Inventors: CPUMATE INC., Golden Sun News Techniques Co., Ltd.
  • Patent number: 8247795
    Abstract: Interfused nanocrystals including two or more materials, further including an alloy layer formed of the two or more materials. In addition, a method of preparing the interfused nanocrystals. In the interfused nanocrystals, the alloy layer may be present at the interface between the two or more nanocrystals, thus increasing the material stability. A material having excellent quantum efficiency in the blue light range may be synthesized.
    Type: Grant
    Filed: July 9, 2007
    Date of Patent: August 21, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Shin Ae Jun, Eun Joo Jang, Seong Jae Choi
  • Publication number: 20120193764
    Abstract: The instant disclosure relates to a nanostructuring process for an ingot surface prior to the slicing operation. A surface treatment step is performed for at least one surface of the ingot in forming a nanostructure layer thereon. The nanostructure layer is capable of enhancing the mechanical strength of the ingot surface to reduce the chipping ratio of the wafer during slicing.
    Type: Application
    Filed: January 19, 2012
    Publication date: August 2, 2012
    Applicant: SINO-AMERICAN SILICON PRODUCTS INC.
    Inventors: Jiunn-Yih CHYAN, Jian-Jhih LI, Kun-Lin YANG, Wen-Ching HSU
  • Patent number: 8232165
    Abstract: A semiconductor structure includes an n-channel field effect transistor (NFET) nanowire, the NFET nanowire comprising a film wrapping around a core of the NFET nanowire, the film wrapping configured to provide tensile stress in the NFET nanowire. A method of making a semiconductor structure includes growing a film wrapping around a core of an n-channel field effect transistor (NFET) nanowire of the semiconductor structure, the film wrapping being configured to provide tensile stress in the NFET nanowire.
    Type: Grant
    Filed: July 15, 2011
    Date of Patent: July 31, 2012
    Assignee: International Business Machines Corporation
    Inventors: Dureseti Chidambarrao, Lidija Sekaric
  • Patent number: 8216364
    Abstract: Direct resistive heating is used to grow nanotubes out of carbon and other materials. A growth-initiated array of nanotubes is provided using a CVD or ion implantation process. These processes use indirect heating to heat the catalysts to initiate growth. Once growth is initiated, an electrical source is connected between the substrate and a plate above the nanotubes to source electrical current through and resistively heat the nanotubes and their catalysts. A material source supplies the heated catalysts with carbon or another material to continue growth of the array of nanotubes. Once direct heating has commenced, the source of indirect heating can be removed or at least reduced. Because direct resistive heating is more efficient than indirect heating the total power consumption is reduced significantly.
    Type: Grant
    Filed: April 14, 2008
    Date of Patent: July 10, 2012
    Assignee: Raytheon Company
    Inventors: Delmar L. Barker, Mead M. Jordan, William R. Owens
  • Publication number: 20120161290
    Abstract: Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (˜4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence (˜75°) and for relatively short nanoneedle lengths (˜1 ?m). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of ˜1 eV. The reported black Ge can have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates.
    Type: Application
    Filed: December 21, 2011
    Publication date: June 28, 2012
    Applicant: The Regents of the University of California
    Inventors: Ali Javey, Yu-Lun Chueh, Zhiyong Fan
  • Patent number: 8183659
    Abstract: The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for interconnects and/or as heat dissipators in electronic devices.
    Type: Grant
    Filed: July 2, 2010
    Date of Patent: May 22, 2012
    Inventor: Mohammad Shafiqul Kabir
  • Publication number: 20120094178
    Abstract: Composite electrode material for a rechargeable battery cell includes an electroactive material; and a polymeric binder including pendant carboxyl groups, characterised in that (i) the electroactive material includes one or more components selected from the group including an electroactive metal, an electroactive semi-metal, an electroactive ceramic material, an electroactive metalloid, an electroactive semi-conductor, an electroactive alloy of a metal, an electroactive alloy of a semi metal and an electroactive compound of a metal or a semi-metal, (ii) the polymeric binder has a molecular weight in the range 300,000 to 3,000,000 and (iii) 50 to 90% of the carboxyl groups of the polymeric binder are in the form of a metal ion carboxylate salt. A method of making a composite electrode material, an electrode, cells including electrodes and devices using such cells are also disclosed.
    Type: Application
    Filed: November 1, 2011
    Publication date: April 19, 2012
    Inventors: Melanie J. Loveridge, Michael Jonathan Lain, Fazlil Coowar, Mamdouh Elsayed Abdelsalam
  • Patent number: 8143686
    Abstract: In one aspect, the present invention provides a method of processing a substrate, e.g., a semiconductor substrate, by irradiating a surface of the substrate (or at least a portion of the surface) with a first set of polarized short laser pulses while exposing the surface to a fluid to generate a plurality of structures on the surface, e.g., within a top layer of the surface. Subsequently, the structured surface can be irradiated with another set of polarized short laser pulses having a different polarization than that of the initial set while exposing the structured surface to a fluid, e.g., the same fluid initially utilized to form the structured surface or a different fluid. In many embodiments, the second set of polarized laser pulses cause the surface structures formed by the first set to break up into smaller-sized structures, e.g., nano-sized features such as nano-sized rods.
    Type: Grant
    Filed: October 18, 2010
    Date of Patent: March 27, 2012
    Assignee: President and Fellows of Harvard College
    Inventors: Eric Mazur, Mengyan Shen
  • Publication number: 20120021331
    Abstract: The present invention relates to SiC nanostructures, including SiC nanopowder, SiC nanowires, and composites of SiC nanopowder and nanowires, which can be used as catalyst supports in membrane electrode assemblies and in fuel cells. The present invention also relates to composite catalyst supports comprising nanopowder and one or more inorganic nanowires for a membrane electrode assembly.
    Type: Application
    Filed: February 23, 2009
    Publication date: January 26, 2012
    Applicant: NANOSYS, Inc.
    Inventors: Yimin ZHU, Jay L. GOLDMAN, Baixin QIAN, Ionel C. STEFAN
  • Publication number: 20110297212
    Abstract: Disclosed is a laminated film having: (a) a substrate; and (b) a bonding layer of ethylene polymer on one major surface of the substrate wherein the bonding layer is placed directly on the substrate or there is a (c) primer layer between the substrate and bonding layer. Also disclosed is a solar module made of such a laminated polymer film.
    Type: Application
    Filed: June 24, 2009
    Publication date: December 8, 2011
    Applicant: E.I Du Pont De Nemours and Company
    Inventors: Qiuju Wu, Ruofei Zhao, Shijie Ren, Bo Xu
  • Patent number: 8057781
    Abstract: The invention provides a fabrication method for a chalcopyrite powder. The fabrication method includes: (a) mixing a Group IB compound and a Group IIIA compound in a solvent; (b) drying or precipitating the solution of step (a) to obtain a precursor containing Group IB and Group IIIA elements; (c) mixing a solution or powder containing a Group VIA compound with the precursor; and (d) heating the mixture of step (c) to obtain the chalcopyrite powder.
    Type: Grant
    Filed: June 10, 2010
    Date of Patent: November 15, 2011
    Assignee: National Taiwan University
    Inventors: Chung-Hsin Lu, Chung-Hsien Wu, Szu-Chia Chien, Zhi-Liang Liu
  • Publication number: 20110272789
    Abstract: The present disclosure relates to a device comprising a mono-crystalline substrate, the mono-crystalline substrate having at least one recessed region which exposes predetermined crystallographic planes of the mono-crystalline substrate, the at least one recessed region further having a recess width and comprising a filling material and an embedded nanochannel, wherein the width, the shape, and the depth of the embedded nanochannel is determined by the recess width of the at least one recessed region and by the growth rate of the growth front of the filling material in a direction perpendicular to the exposed predetermined crystallographic planes. The present disclosure is also related to a method for manufacturing a nanochannel device.
    Type: Application
    Filed: May 4, 2011
    Publication date: November 10, 2011
    Applicants: IMEC, KATHOLIEKE UNIVERSITEIT LEUVEN, K.U. LEUVEN R&D, TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Gang Wang, Joshua Tseng, Roger Loo
  • Publication number: 20110266521
    Abstract: Disclosed are a variety of porous and non-porous wire-like structures of microscopic and nanoscopic scale. For instance, disclosed are structures that comprise a porous object that comprises: (i) a first region; and (ii) a second region adjacent to the first region along an axis of the object, where the first region has at least one porous property different from that of the second region. Also disclosed are structures that include: (i) a high resistivity silicon; and (ii) a cross-section that is substantially perpendicular to an axis of the object. Also disclosed are methods of making and using such structures.
    Type: Application
    Filed: March 9, 2011
    Publication date: November 3, 2011
    Applicant: Board of Regents of the University of Texas System
    Inventors: Mauro Ferrari, Xuewu Liu, Ciro Chiappini, Jean Raymond Fakhoury
  • Publication number: 20110248386
    Abstract: The method for forming wavelike coherent nanostructures by irradiating a surface of a material by a homogeneous flow of ions is disclosed. The rate of coherency is increased by applying preliminary preprocessing steps.
    Type: Application
    Filed: June 20, 2011
    Publication date: October 13, 2011
    Applicant: Wostec, Inc.
    Inventors: Valery K. Smirnov, Dmitry S. Kibalov
  • Patent number: 8029698
    Abstract: The present invention relates to a method for preparing photoluminescent silicon nanoparticles having uniformly hydrogen-terminated surfaces that are essentially free of residual oxygen. The present invention also relates to a method of preparing a blue-emitting photoluminescent silicon nanoparticle. The present invention further relates to a composition that includes a photoluminescent silicon nanoparticle having a surface that is uniformly hydrogen-terminated and essentially free of residual oxygen. The present invention also relates to a composition including a photoluminescent silicon nanoparticle having a surface that is uniformly coated with an organic layer and essentially free of residual oxygen. The present invention additionally relates to a composition including a photoluminescent silicon nanoparticle stably dispersed in an organic solvent and having a surface that is uniformly coated with an organic layer and essentially free of residual oxygen.
    Type: Grant
    Filed: April 19, 2006
    Date of Patent: October 4, 2011
    Assignee: The Research Foundation of State University of New York
    Inventors: Eli Ruckenstein, Mark T. Swihart, Fengjun Hua
  • Patent number: 8022408
    Abstract: Example embodiments relate to a crystalline nanowire substrate having a structure in which a crystalline nanowire film having a relatively fine line-width may be formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the crystalline nanowire substrate may include preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.
    Type: Grant
    Filed: March 22, 2010
    Date of Patent: September 20, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hans S. Cho, Takashi Noguchi, Wenxu Xianyu, Do-Young Kim, Huaxiang Yin, Xiaoxin Zhang
  • Publication number: 20110186862
    Abstract: There is provided a silicon carbide semiconductor device having excellent electrical characteristics such as channel mobility, and a method for manufacturing the same. A semiconductor device includes a substrate made of silicon carbide and having an off-angle of greater than or equal to 50° and less than or equal to 65° with respect to a surface orientation of {0001}, a p-type layer serving as a semiconductor layer, and an oxide film serving as an insulating film. The p-type layer is formed on the substrate and is made of silicon carbide. The oxide film is formed to contact with a surface of the p-type layer. A maximum value of the concentration of nitrogen atoms in a region within 10 nm of an interface between the semiconductor layer and the insulating film (interface between a channel region and the oxide film) is greater than or equal to 1×1021 cm?3.
    Type: Application
    Filed: February 3, 2009
    Publication date: August 4, 2011
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Shin Harada, Takeyoshi Masuda, Keiji Wada, Masato Tsumori
  • Patent number: 7977755
    Abstract: The present invention discloses a suspended nanochannel transistor structure and a method for fabricating the same. The transistor structure of the present invention comprises a substrate; a side gate formed on the substrate; a dielectric layer covering the substrate and the side gate; a suspended nanochannel formed beside the lateral of the side gate with an air gap existing between the suspended nanochannel and the dielectric layer; a source and a drain formed over the dielectric layer and respectively arranged at two ends of the suspended nanochannel. The electrostatic force of the side gate attracts or repels the suspended nanochannel and thus fast varies the equivalent thickness of the side-gate dielectric layer. Thereby, the on/off state of the element is rapidly switched, or the initial voltage of the channel is altered.
    Type: Grant
    Filed: December 17, 2008
    Date of Patent: July 12, 2011
    Assignee: National Chiao Tung University
    Inventors: Horng-Chih Lin, Chun-Jung Su, Hsing-Hui Hsu, Guan-Jang Li
  • Publication number: 20110136139
    Abstract: Semiconductor nanoparticle complexes comprising semiconductor nanoparticles in association with cationic polymers are described. Also described are methods for enhancing the transport of semiconductor nanoparticles across biological membranes to provide encoded cells. The methods are particularly useful in multiplex settings where a plurality of encoded cells are to be assayed. Kits comprising reagents for performing such methods are also provided.
    Type: Application
    Filed: October 15, 2010
    Publication date: June 9, 2011
    Applicant: LIFE TECHNOLOGIES CORPORATION
    Inventors: MARCEL P. BRUCHEZ, R. HUGH DANIELS, JENNIFER DIAS, LARRY C. MATTHEAKIS, HONGJIAN LIU, AQUANETTE M. BURT, BERNDT CHRISTOFFER LAGERHOLM, DANITH H. LY
  • Patent number: 7906778
    Abstract: Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures that include one or more nanowires are also disclosed. The nanowires can include a passivation layer or have a hollow tube structure.
    Type: Grant
    Filed: April 2, 2007
    Date of Patent: March 15, 2011
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Nobuhiko Kobayashi, Wei Wu, Duncan R Stewart, Shashank Sharma, Shih-Yuan Wang, R Stanley Williams
  • Publication number: 20110033695
    Abstract: Provided are a nanocomposite including a layered inorganic material and a random copolymer containing a hydrophobic monomer and a hydrophilic monomer, a polymer composition including the nanocomposite, and a method for preparing the polymer composition. The random copolymer can be prepared at a low cost in a simple process and function as a compatibilizer in small amounts to maintain excellent properties of the nanocomposite including excellent mechanical characteristics such as abrasion resistance, hardness, tensile modulus and tear resistance, excellent thermal characteristics, high liquid and gas permeability, and low flammability.
    Type: Application
    Filed: November 20, 2008
    Publication date: February 10, 2011
    Applicant: LG Chem, Ltd.
    Inventors: No Ma Kim, Bong Keun Lee, Suk Ky Chang, Jae Gwan Lee
  • Publication number: 20110020455
    Abstract: A powdery porous carrier comprising a porous silicon-containing carrier is impregnated with a solution containing an organic solvent and an active ingredient hardly soluble in water, and the organic solvent is removed to give a solid dispersion having the active ingredient supported to the porous carrier without a treatment with a supercritical fluid. The porous silicon-containing carrier has a heating loss of not more than 4% by weight at a temperature of 950° C. for 2 hours (e.g., a spherical silicon-containing carrier such as a spherical porous silica). The porous silicon-containing carrier may be a spherical silica having a mean pore size of 10 to 40 nm and an oil absorption of 175 to 500 ml/100 g. A pharmaceutical composition (e.g., tablets, granules, or capsules) may be prepared from the solid dispersion and a pharmaceutically acceptable carrier.
    Type: Application
    Filed: March 10, 2009
    Publication date: January 27, 2011
    Inventors: Kazushi Yoshida, Norimichi Okubo, Junichi Sakata, Hashime Kanazawa
  • Patent number: 7857907
    Abstract: The present invention relates to a method for forming a layered structure with silicon nanocrystals. In one embodiment, the method comprises the steps of: (i) forming a first conductive layer on a substrate, (ii) forming a silicon-rich dielectric layer on the first conductive layer, and (iii) laser-annealing at least the silicon-rich dielectric layer to induce silicon-rich aggregation to form a plurality of silicon nanocrystals in the silicon-rich dielectric layer. The silicon-rich dielectric layer is one of a silicon-rich oxide film having a refractive index in the range of about 1.4 to 2.3, or a silicon-rich nitride film having a refractive index in the range of about 1.7 to 2.3. The layered structure with silicon nanocrystals in a silicon-rich dielectric layer is usable in a solar cell, a photodetector, a touch panel, a non-volatile memory device as storage node, and a liquid crystal display.
    Type: Grant
    Filed: January 25, 2007
    Date of Patent: December 28, 2010
    Assignee: AU Optronics Corporation
    Inventors: An-Thung Cho, Chih-Wei Chao, Chia-Tien Peng, Wan-Yi Liu, Ming-Wei Sun
  • Publication number: 20100310872
    Abstract: Provided are nanofunctional silica particles having excellent functionality and quality, and capable of being mass-produced at low costs. According to the present invention, there are provided nanofunctional silica particles including a coating layer containing one or more silica compounds selected from the group consisting of mercaptopropyl trimethoxysilane (MPS), mercaptopropyl triethoxysilane (MPES), mercaptopropyl methyldimethoxysilane (MPDMS), trimethoxy[2-(7-oxabicyclo[4.1.0]-hept-3-yl)ethyl]silane (EpoPS), thiocyanatopropyl triethoxysilane (TCPS), acryloxypropyl trimethoxysilane (ACPS), and aminopropyl trimethoxysilane (APS); and functional particles in the coating layer, and being used in imaging, assay, diagnosis, treatment or the like, medicine or bioresearch.
    Type: Application
    Filed: December 8, 2008
    Publication date: December 9, 2010
    Applicant: THE UNIVERSITY OF TOKUSHIMA
    Inventor: Michihiro Nakamura
  • Patent number: 7811883
    Abstract: A non-volatile memory transistor with a nanocrystal-containing floating gate formed by nanowires is disclosed. The nanocrystals are formed by the growth of short nanowires over a crystalline program oxide. As a result, the nanocrystals are single-crystals of uniform size and single-crystal orientation.
    Type: Grant
    Filed: May 15, 2008
    Date of Patent: October 12, 2010
    Assignee: International Business Machines Corporation
    Inventor: Guy M. Cohen
  • Patent number: 7811470
    Abstract: A water based colorant that includes a polymer emulsion and semiconductor crystals capable of emitting light. The colorants include paints, inks and/or dyes can be applied to various substrates.
    Type: Grant
    Filed: October 4, 2007
    Date of Patent: October 12, 2010
    Assignee: Evident Technologies
    Inventors: James Hayes, Luis Sanchez
  • Patent number: 7777291
    Abstract: The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for interconnects and/or as heat dissipators in electronic devices.
    Type: Grant
    Filed: August 28, 2006
    Date of Patent: August 17, 2010
    Assignee: Smoltek AB
    Inventor: Mohammad Shafiqul Kabir
  • Patent number: 7741664
    Abstract: Provided are a CMOS image sensor and a method for fabricating the same. A nanopillar is plurally formed at an upper end of a light receiving element.
    Type: Grant
    Filed: December 6, 2006
    Date of Patent: June 22, 2010
    Assignee: Korea Advanced Institute of Science & Technology
    Inventors: Yang-Kyu Choi, Kuk-Hwan Kim
  • Patent number: 7731932
    Abstract: Methods of processing nanocrystals to remove excess free and bound organic material and particularly surfactants used during the synthesis process, and resulting nanocrystal compositions, devices and systems that are physically, electrically and chemically integratable into an end application.
    Type: Grant
    Filed: August 4, 2008
    Date of Patent: June 8, 2010
    Assignee: Nanosys, Inc.
    Inventors: Erik C. Scher, Mihai A. Buretea, Jeffery A. Whiteford, Andreas P. Meisel
  • Patent number: 7727786
    Abstract: An optical memory cell having a material layer associated with a pixel capable of emitting and receiving light. The material layer has phosphorescent material formed therein for storing data as light received from and emitted to the pixel.
    Type: Grant
    Filed: February 7, 2008
    Date of Patent: June 1, 2010
    Inventor: Terry L. Gilton